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JP2004101453A - Characteristics measuring method and system - Google Patents

Characteristics measuring method and system Download PDF

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Publication number
JP2004101453A
JP2004101453A JP2002266282A JP2002266282A JP2004101453A JP 2004101453 A JP2004101453 A JP 2004101453A JP 2002266282 A JP2002266282 A JP 2002266282A JP 2002266282 A JP2002266282 A JP 2002266282A JP 2004101453 A JP2004101453 A JP 2004101453A
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JP
Japan
Prior art keywords
contact resistance
resistance
under test
device under
measured
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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JP2002266282A
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Japanese (ja)
Inventor
Mineji Nasu
那須 峰次
Koji Shiotani
塩谷 宏治
Hiroyuki Maeda
前田 博之
Shinichiro Iwama
岩間 真一郎
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Niterra Co Ltd
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NGK Spark Plug Co Ltd
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Filing date
Publication date
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Priority to JP2002266282A priority Critical patent/JP2004101453A/en
Publication of JP2004101453A publication Critical patent/JP2004101453A/en
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  • Measurement Of Resistance Or Impedance (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a characteristics measuring method for determining contact resistance exerting an influence on measurement data and improving the same. <P>SOLUTION: In a characteristic measuring method for measuring a characteristic value of a material to be measured or conducting electric processing, two probe pins are disposed at a space in the material to be measured, and a resistance value between two points where the measured material and the probe pins come into contact to determine whether or not the contact resistance between the probe pin and the measured material is equal to or larger than designated value. When the contact resistance is determined to be equal to or larger than the designated value, the contact resistance between the probe pin and the measured material is reduced. <P>COPYRIGHT: (C)2004,JPO

Description

【0001】
【発明の属する技術分野】
本発明は、被測定物の特性値の測定又は電気処理を行う特性測定方法及び装置に関し、特に、二つの相異なる金属、又は、金属と半導体を接触させたときに、その接触部に生ずる接触抵抗を改善する特性測定方法及び装置に関する。
【0002】
【従来の技術】
センサ等の素子の特性測定では、一般にプローブピンによる接触式で測定が行なわれる。測定方法について説明すると、被測定物に対して1本のプローブピンを接触させてそのプローブピンを通して特性値の測定又は電気処理を行う。
【0003】
プローブピンによる接触式で被測定物の特性を測定する場合、プローブピンと被測定物との間で反応によりバリア相が形成され、このバリア相による接触抵抗が測定データに悪影響を及ぼす。
【0004】
また、プローブや被測定物の接触面ないし点の酸化度合いによって酸化皮膜による接触抵抗が生じ、この酸化皮膜による接触抵抗も測定データに悪影響を及ぼす。
【0005】
そこで、被測定物102(素子)に対して2本のプローブピン110a、110bを接触させ(図3(A)参照)、プローブピン間の抵抗を測定して接触抵抗を確認し(図3(B)参照)、その後、通常測定及び電気処理を行なう(図3(C)参照)ことが知られている(例えば、特許文献1参照)。これにより、2本のプローブピン110a、110b間の接触抵抗を確認し、考慮した上でセンサの特性値又は電気処理を行うことができるようになった。
【0006】
【特許文献1】
特開平3−259737号公報
【0007】
【発明が解決しようとする課題】
しかし、市販のプローブピンの接触抵抗は、プローブピン及び被測定物の酸化具合及び表面形状によって異なるが、カタログ値(0.01Ω台)より大きく、時には数Ωに及ぶことがある。
【0008】
そして、現在の工程において、接触抵抗が実抵抗に付加され、実抵抗値よりも抵抗が高く測定されるような状態(接触抵抗が載った状態)でガスセンサの特性値の測定又は電気処理を行なうと、電圧降下が起こり、センサ特性の測定及び、電気処理に及ぼす影響は大きく、接触抵抗を考慮するだけでは無視できないレベルにある。
【0009】
本発明の第1の目的は、測定データに影響を与える接触抵抗を判断し改善させることができる特性測定方法を提供することである。
【0010】
本発明の第2の目的は、上記方法を実現することができる特性測定装置を提供することである。
【0011】
【課題を解決するための手段】
本発明の第1の視点においては、被測定物の特性値の測定又は電気処理を行う特性測定方法において、前記被測定物に所定の間隔に離間して2つのプローブピンを配して前記被測定物と前記プローブピンが接触する2点間の抵抗値を測定し、前記抵抗値に基づいて前記プローブピンと前記被測定物との間の接触抵抗が所定の値以上か否かを判断し、前記接触抵抗が前記所定の値以上と判断した場合に、前記プローブピンと前記被測定物との間の接触抵抗を低減することを特徴とする。これにより、測定データに影響を与える接触抵抗を確認し、所定の値以上と判断した場合に接触抵抗を低減させることで、被測定物の特性をより正確に測定することができる。
【0012】
また、前記特性測定方法において、前記被測定物の抵抗値に基づいて前記プローブピンと前記被測定物との間の接触抵抗が所定の値以上か否かを判断する前に、前記プローブピンと前記被測定物との間の接触抵抗を低減することが好ましい。これにより、あらかじめ測定データに影響を与える接触抵抗を改善した上で、被測定物の特性をより正確に測定することができる。
【0013】
また、前記特性測定方法において、前記接触抵抗が前記所定の値以上と判断し、前記接触抵抗を低減した後に再び前記所定の値以上か否かを判断することが好ましい。これにより、測定データに影響を与える接触抵抗を確実に改善した上で、被測定物の特性をより正確に測定することができる。
【0014】
また、前記特性測定方法において、前記プローブピン間に所定量の電流を印加することにより前記プローブピンと前記被測定物との間の接触抵抗を低減することが好ましい。被測定物に所定量の電流を印加することで、接触抵抗の原因となる酸化膜、バリア膜等の障壁を破壊することができる。ここで、所定量の電流とは、特性測定や電気処理時に流れる電流以上の電流をいう。
【0015】
さらに、前記特性測定方法において、前記所定量の電流は、1A以上であることが好ましい。1A以上で接触抵抗の原因となる酸化膜、バリア膜等の障壁を確実に破壊することができるからである。
【0016】
本発明の第2の視点においては、被測定物の特性値の測定又は電気処理を行う特性測定装置において、前記被測定物に所定の間隔に離間して配される2つのプローブピンと、前記被測定物と前記プローブピンが接触する2点間の抵抗値を測定する抵抗測定手段と、前記抵抗値に基づいて前記プローブピンと前記被測定物との間の接触抵抗が所定の値以上か否かを判断する判断手段と、前記接触抵抗が前記所定の値以上と判断した場合に、前記プローブピンと前記被測定物との間の接触抵抗を低減する接触抵抗低減手段と、を備えることを特徴とする。この装置によって、上記方法にて、測定データに影響を与える接触抵抗を改善した上で、被測定物の特性をより正確に測定することができる。
【0017】
【発明の実施の形態】
被測定物(図1の2)の特性値の測定又は電気処理を行う特性測定装置(図1の1)において、前記被測定物に所定の間隔に離間して配される2つのプローブピン(図1の10a、10b)と、前記被測定物と前記プローブピンが接触する2点間の抵抗値を測定する抵抗測定手段(図1の40)と、前記抵抗値に基づいて前記プローブピンと前記被測定物との間の接触抵抗が所定の値以上か否かを判断する判断手段(図1の81)と、前記接触抵抗が前記所定の値以上と判断した場合に、前記プローブピンと前記被測定物との間の接触抵抗を低減する接触抵抗低減手段(図1の50)と、を備えることにより、プローブピンと被測定物との間の接触抵抗が測定データに与える影響を確認でき、接触抵抗が十分小さいことを確認したうえで被測定物の特性を正確に測定することができる。
【0018】
【実施例】
本発明の実施例について図面を用いて説明する。図1は、本発明の実施例1に係る特性測定装置の構成を模式的に示したブロック図である。この特性測定装置1は、2点接触する被測定物の抵抗値及び被測定物の特性値を測定する装置であり、プローブピン10a、10bと、載置台20と、押圧機構30a、30bと、抵抗測定手段40と、接触抵抗低減手段50と、電気処理手段60と、特性測定手段70と、コンピュータ80と、を有する。
【0019】
プローブピン10a、10bは、所定の間隔に離間して配され、それぞれと被測定物が接触し、表面に金メッキされたものである。
【0020】
載置台20は、測定しやすくするよう被測定物2若しくは被測定物2の端子ないし電極を載置するための台である。
【0021】
押圧機構30a、30bは、載置台20上に載置された被測定物2に対し2つのプローブピン10a、10bを上下動させることにより押圧若しくはその解除を行う。
【0022】
抵抗測定手段40は、被測定物2の抵抗値を測定する手段(例えば、抵抗測定装置)である。
【0023】
接触抵抗低減手段50は、プローブピン10a、10bと被測定物2との間の接触抵抗を低減する手段であり、プローブピン10a、10b間に被測定物2とを介して所定量の電流(1A以上)を印加する電流印加手段である。
【0024】
電気処理手段60は、被測定物2に対しプローブピン10a、10bを介して電気処理(例えば、定電圧を印加させてセンサのセラミック素子を活性化させるエージング処理)を行なう手段である。
【0025】
特性測定手段70は、被測定物2の特性値を測定する手段である。
【0026】
コンピュータ80は、判断手段81と、制御手段82と、を有する。
【0027】
判断手段81は、第1に、抵抗測定手段40での被測定物2の抵抗値に基づいてプローブピン10a、10bと被測定物2との間の接触抵抗が所定の値(閾値)以上か否かを判断する。第2に、判断手段81は、接触抵抗低減手段50で接触抵抗を低減した後に、再度、プローブピン10a、10bと被測定物2との間の接触抵抗が所定の値以上か否かを判断する。
【0028】
制御手段82は、第1に、判断手段81において接触抵抗が所定の値より小さいと判断された場合に、特性測定手段70にて被測定物2の特性値を測定するように制御する。第2に、制御手段82は、判断手段81による判断を行なう前に、接触抵抗低減手段50にプローブピン10a、10bと被測定物2との間の接触抵抗を低減させるように制御する。第3に、制御手段82は、判断手段81において接触抵抗が所定の値以上と判断された場合に、接触抵抗低減手段50にプローブピン10a、10bと被測定物2との間の接触抵抗を低減させるように制御する。第4に、制御手段82は、判断手段81において接触抵抗が所定の値より小さいと判断された場合に、電気処理手段60に被測定物2を電気処理(エージング処理)するように制御する。
【0029】
また、被測定物2は、例えば、セラミック素子(センサ素子など)若しくは素子と電気的に接続するとともに素子から延在する端子(SUS、ステンレスなど)を有するガスセンサの金具単体(図4参照)である。この金具単体200は、この後、回路と一体化されてガスセンサの完成品となる。なお、金具単体については、回路と一体化した後は切り離すことができず、一体化後にセンサ特性がNGとなったときは廃棄処分されることとなるため、コストロスを回避すべく、一体化前にセンサ特性の評価が行なわれる。
【0030】
実施例1の動作について図面を用いて説明する。図2は、本発明の実施例1に係る特性測定装置の動作の一例を説明するための模式図である。
【0031】
まず、被測定物2(素子、端子)を載置台に載置して、被測定物2に対してプローブピン10a、10bを下ろして2点接触させる(図2(A)参照)。
【0032】
次に、両プローブピン10a、10b間に電流(1A以上)を流す(図2(B)参照)。これにより、プローブピン10a、10bと被測定物2との間の接触抵抗の原因となる酸化膜、バリア膜等の障壁を破壊(除去)される。
【0033】
次に、被測定物の抵抗を測定し接触抵抗が十分小さいか否かを確認する(図2(C)参照)。ほとんどの被測定物2は、図2(B)の電流処理により測定データに影響を与える接触抵抗が改善される(十分小さくなる)。万一、接触抵抗が改善されていないときは、図2(B)の電流処理を再度行ない、図2(C)の接触抵抗の確認を再度行なう。何度も図2(B)の電流処理を行なっても接触抵抗が改善されない時は、その被測定物につき不良品(NG品)となる。
【0034】
最後に、接触抵抗が改善されたことが確認されたときは、特性の測定又は電気処理を行なう(図2(D)参照)。
【0035】
他の実施例として、リレー(継電器;電気接点を開閉することにより、同一又は他の電気回路に接続された装置を動作させ、または制御するもの)などにも適用できる。すなわち、被測定物の特性値を測定するとともに測定に係る配線上にリレーを有する特性測定装置において、リレーの電気接点が接続しているときに1A以上の電流を印加する電流印加手段と、前記リレーの電気接点の接触抵抗が所定の値以上か否かを確認する判断手段と、を備えるようにする。これにより、測定データに影響を与えるリレー部分の接触抵抗(接点抵抗)を改善することができる。万一、接触抵抗が改善されないときは、新しいリレーに交換することで改善できる。
【0036】
【発明の効果】
本発明によれば、プローブピンと被測定物との間の接触抵抗が測定データに与える影響を確認でき、接触抵抗が大きい場合には、接触抵抗を改善することができる。
【0037】
また、本発明によれば、あらかじめ測定データに影響を与える接触抵抗を改善した上で、被測定物の特性をより正確に測定することができる。
【0038】
さらに、本発明によれば、1A以上の電流を流すことで、接触抵抗の原因となる酸化膜、バリア膜等の障壁を破壊(除去)できるので、接触抵抗を低減させることができる。
【図面の簡単な説明】
【図1】本発明の実施例1に係る特性測定装置の構成を模式的に示したブロック図である。
【図2】本発明の実施例1に係る特性測定装置の動作の一例を説明するための模式図である。
【図3】従来の一例に係る特性測定装置の動作の一例を説明するための模式図である。
【図4】ガスセンサの金具単体の構成を模式的に示した側面図である。
【符号の説明】
1 特性測定装置
2、102 被測定物
10a、10b、110a、110b プローブピン
20 載置台
30a、30b 押圧機構
40 抵抗測定手段
50 接触抵抗低減手段
60 電気処理手段
70 特性測定手段
80 コンピュータ
81 判断手段
82 制御手段
200 金具単体(ガスセンサ)
201 素子部
202 ヒータ部
203 端子部
204 胴体部
205 プロテクタ
206 貫通穴
[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method and an apparatus for measuring a characteristic value of an object to be measured or performing an electrical treatment, and particularly to a contact between two different metals or a metal and a semiconductor when the metal and the semiconductor are brought into contact with each other. The present invention relates to a method and an apparatus for measuring characteristics for improving resistance.
[0002]
[Prior art]
In measuring characteristics of elements such as sensors, measurement is generally performed by a contact method using a probe pin. The measurement method will be described. One probe pin is brought into contact with an object to be measured, and characteristic values are measured or electric processing is performed through the probe pin.
[0003]
When the characteristics of an object to be measured are measured by a contact method using a probe pin, a barrier phase is formed by a reaction between the probe pin and the object to be measured, and the contact resistance due to the barrier phase adversely affects measurement data.
[0004]
In addition, contact resistance due to the oxide film is generated depending on the degree of oxidation of the contact surface or point of the probe or the object to be measured, and the contact resistance due to the oxide film also adversely affects the measurement data.
[0005]
Then, the two probe pins 110a and 110b are brought into contact with the device under test 102 (element) (see FIG. 3A), and the resistance between the probe pins is measured to confirm the contact resistance (FIG. B)), and thereafter, it is known that normal measurement and electrical processing are performed (see FIG. 3C) (for example, see Patent Document 1). As a result, the contact resistance between the two probe pins 110a and 110b can be confirmed, and the sensor characteristic value or electric processing can be performed after taking into account the contact resistance.
[0006]
[Patent Document 1]
JP-A-3-259737
[Problems to be solved by the invention]
However, the contact resistance of commercially available probe pins differs depending on the degree of oxidation and surface shape of the probe pins and the DUT, but is larger than a catalog value (on the order of 0.01Ω) and sometimes reaches several Ω.
[0008]
Then, in the current process, the measurement or the electric processing of the characteristic value of the gas sensor is performed in a state where the contact resistance is added to the actual resistance and the resistance is measured to be higher than the actual resistance value (the state where the contact resistance is placed). Then, a voltage drop occurs, and the influence on the measurement of the sensor characteristics and the electric processing is large, and the level is not negligible only by considering the contact resistance.
[0009]
A first object of the present invention is to provide a characteristic measuring method capable of judging and improving a contact resistance affecting measurement data.
[0010]
A second object of the present invention is to provide a characteristic measuring device capable of realizing the above method.
[0011]
[Means for Solving the Problems]
According to a first aspect of the present invention, in a characteristic measuring method for measuring a characteristic value of an object to be measured or performing electrical processing, two probe pins are arranged at a predetermined interval on the object to be measured and the object is measured. Measure the resistance value between two points where the measured object and the probe pin are in contact, and determine whether the contact resistance between the probe pin and the measured object is equal to or greater than a predetermined value based on the resistance value, When the contact resistance is determined to be equal to or greater than the predetermined value, the contact resistance between the probe pin and the device under test is reduced. As a result, the contact resistance that affects the measurement data is checked, and if the contact resistance is determined to be equal to or greater than the predetermined value, the contact resistance is reduced, so that the characteristics of the device under test can be measured more accurately.
[0012]
Further, in the characteristic measuring method, before determining whether a contact resistance between the probe pin and the object to be measured is equal to or more than a predetermined value based on a resistance value of the object to be measured, the probe pin and the object to be measured are determined. It is preferable to reduce the contact resistance with the measurement object. As a result, the characteristics of the device under test can be measured more accurately after the contact resistance affecting the measurement data is improved in advance.
[0013]
In the characteristic measuring method, it is preferable that the contact resistance is determined to be equal to or more than the predetermined value, and after the contact resistance is reduced, whether the contact resistance is equal to or more than the predetermined value is determined again. This makes it possible to more accurately measure the characteristics of the device under test while reliably improving the contact resistance that affects the measurement data.
[0014]
In the characteristic measuring method, it is preferable that a contact current between the probe pin and the device under test is reduced by applying a predetermined amount of current between the probe pins. By applying a predetermined amount of current to the device under test, a barrier such as an oxide film or a barrier film that causes contact resistance can be broken. Here, the predetermined amount of current refers to a current that is equal to or greater than the current flowing during characteristic measurement or electric processing.
[0015]
Further, in the characteristic measuring method, the predetermined amount of current is preferably 1 A or more. This is because a barrier such as an oxide film or a barrier film that causes contact resistance can be reliably broken at 1 A or more.
[0016]
According to a second aspect of the present invention, there is provided a characteristic measuring apparatus for measuring a characteristic value of an object to be measured or performing electrical processing, comprising: two probe pins arranged at a predetermined interval on the object to be measured; Resistance measuring means for measuring a resistance value between two points at which the object to be measured and the probe pin are in contact with each other; and whether a contact resistance between the probe pin and the object to be measured is equal to or more than a predetermined value based on the resistance value. And a contact resistance reducing unit that reduces a contact resistance between the probe pin and the device under test when the contact resistance is determined to be equal to or greater than the predetermined value. I do. With this apparatus, it is possible to more accurately measure the characteristics of the device under test while improving the contact resistance affecting the measurement data by the above method.
[0017]
BEST MODE FOR CARRYING OUT THE INVENTION
In a characteristic measuring device (1 in FIG. 1) for measuring characteristic values or performing electrical processing of a characteristic value of an object to be measured (2 in FIG. 1), two probe pins (1) are arranged at predetermined intervals on the object to be measured. 10a, 10b), a resistance measuring means (40 in FIG. 1) for measuring a resistance value between two points where the object to be measured contacts the probe pin, and the probe pin and the probe pin based on the resistance value. Judging means (81 in FIG. 1) for judging whether or not the contact resistance between the probe pin and the object to be measured is equal to or more than a predetermined value. By providing a contact resistance reducing means (50 in FIG. 1) for reducing the contact resistance between the probe pin and the object to be measured, it is possible to confirm the influence of the contact resistance between the probe pin and the object to be measured on the measurement data. Check that the resistance is small enough It is possible to accurately measure the characteristics of the object.
[0018]
【Example】
An embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a block diagram schematically showing the configuration of the characteristic measuring device according to the first embodiment of the present invention. The characteristic measuring device 1 is a device for measuring the resistance value of a device under test and the characteristic value of the device under two-point contact, and includes probe pins 10a and 10b, a mounting table 20, pressing mechanisms 30a and 30b, It has a resistance measuring unit 40, a contact resistance reducing unit 50, an electric processing unit 60, a characteristic measuring unit 70, and a computer 80.
[0019]
The probe pins 10a and 10b are spaced apart from each other at a predetermined interval, the object to be measured comes into contact with each of them, and the surfaces thereof are plated with gold.
[0020]
The mounting table 20 is a table for mounting the DUT 2 or the terminals or electrodes of the DUT 2 so as to facilitate the measurement.
[0021]
The pressing mechanisms 30a and 30b press or release the two probe pins 10a and 10b by moving the two probe pins 10a and 10b up and down on the DUT 2 mounted on the mounting table 20.
[0022]
The resistance measuring unit 40 is a unit that measures the resistance value of the device under test 2 (for example, a resistance measuring device).
[0023]
The contact resistance reducing means 50 is a means for reducing the contact resistance between the probe pins 10a and 10b and the device under test 2, and a predetermined amount of current (between the probe pins 10a and 10b via the device under test 2). (1A or more).
[0024]
The electrical processing means 60 is means for performing electrical processing (for example, aging processing for applying a constant voltage to activate the ceramic element of the sensor) to the device under test 2 via the probe pins 10a and 10b.
[0025]
The characteristic measuring unit 70 is a unit that measures a characteristic value of the device under test 2.
[0026]
The computer 80 has a determination unit 81 and a control unit 82.
[0027]
First, the judging means 81 determines whether the contact resistance between the probe pins 10a and 10b and the DUT 2 is equal to or greater than a predetermined value (threshold) based on the resistance value of the DUT 2 by the resistance measurement means 40. Determine whether or not. Secondly, after the contact resistance is reduced by the contact resistance reducing means 50, the determining means 81 again determines whether or not the contact resistance between the probe pins 10a and 10b and the DUT 2 is equal to or greater than a predetermined value. I do.
[0028]
First, the control unit 82 controls the characteristic measuring unit 70 to measure the characteristic value of the DUT 2 when the determining unit 81 determines that the contact resistance is smaller than the predetermined value. Second, the control means 82 controls the contact resistance reducing means 50 to reduce the contact resistance between the probe pins 10a and 10b and the device under test 2 before making the determination by the determining means 81. Thirdly, when the determining means 81 determines that the contact resistance is equal to or more than a predetermined value, the controlling means 82 gives the contact resistance reducing means 50 a contact resistance between the probe pins 10a and 10b and the DUT 2. Control to reduce. Fourth, the control means 82 controls the electric processing means 60 to perform electric processing (aging processing) on the device under test 2 when the judgment means 81 judges that the contact resistance is smaller than a predetermined value.
[0029]
The device under test 2 is, for example, a ceramic element (such as a sensor element) or a metal sensor bracket (see FIG. 4) that is electrically connected to the element and has a terminal (SUS, stainless steel, etc.) extending from the element. is there. The metal fitting 200 is thereafter integrated with the circuit to complete the gas sensor. In addition, the metal fitting itself cannot be separated after being integrated with the circuit, and will be discarded when the sensor characteristic becomes NG after integration. The evaluation of the sensor characteristics is performed.
[0030]
The operation of the first embodiment will be described with reference to the drawings. FIG. 2 is a schematic diagram for explaining an example of the operation of the characteristic measuring device according to the first embodiment of the present invention.
[0031]
First, the device under test 2 (elements, terminals) is placed on a mounting table, and the probe pins 10a and 10b are lowered to the device under test 2 to make two-point contact (see FIG. 2A).
[0032]
Next, a current (1 A or more) is passed between the probe pins 10a and 10b (see FIG. 2B). As a result, a barrier such as an oxide film or a barrier film that causes contact resistance between the probe pins 10a and 10b and the DUT 2 is destroyed (removed).
[0033]
Next, the resistance of the object to be measured is measured to check whether the contact resistance is sufficiently small (see FIG. 2C). In most of the DUTs 2, the contact resistance affecting measurement data is improved (sufficiently reduced) by the current processing of FIG. 2B. If the contact resistance has not been improved, the current processing of FIG. 2B is performed again, and the confirmation of the contact resistance of FIG. 2C is performed again. If the contact resistance is not improved even if the current processing of FIG. 2B is performed many times, the measured object becomes a defective product (NG product).
[0034]
Finally, when it is confirmed that the contact resistance has been improved, the characteristics are measured or electric processing is performed (see FIG. 2D).
[0035]
As another embodiment, the present invention can be applied to a relay (a relay that operates or controls a device connected to the same or another electric circuit by opening and closing an electric contact). That is, in a characteristic measuring device that measures a characteristic value of an object to be measured and has a relay on a wiring related to the measurement, a current application unit that applies a current of 1 A or more when an electrical contact of the relay is connected; Determining means for checking whether the contact resistance of the electrical contact of the relay is equal to or greater than a predetermined value. Thereby, the contact resistance (contact resistance) of the relay portion which affects the measurement data can be improved. If the contact resistance does not improve, it can be improved by replacing it with a new relay.
[0036]
【The invention's effect】
ADVANTAGE OF THE INVENTION According to this invention, the influence which the contact resistance between a probe pin and a to-be-measured object gives to measurement data can be confirmed, and when contact resistance is large, contact resistance can be improved.
[0037]
Further, according to the present invention, the characteristics of the device under test can be measured more accurately after the contact resistance affecting the measurement data is improved in advance.
[0038]
Furthermore, according to the present invention, by flowing a current of 1 A or more, a barrier such as an oxide film or a barrier film that causes contact resistance can be destroyed (removed), so that the contact resistance can be reduced.
[Brief description of the drawings]
FIG. 1 is a block diagram schematically showing a configuration of a characteristic measuring device according to a first embodiment of the present invention.
FIG. 2 is a schematic diagram for explaining an example of an operation of the characteristic measuring device according to the first embodiment of the present invention.
FIG. 3 is a schematic diagram for explaining an example of an operation of a characteristic measuring device according to an example of the related art.
FIG. 4 is a side view schematically showing the configuration of a single metal fitting of the gas sensor.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Characteristic measuring apparatus 2, 102 Device under test 10a, 10b, 110a, 110b Probe pin 20 Mounting table 30a, 30b Pressing mechanism 40 Resistance measuring means 50 Contact resistance reducing means 60 Electric processing means 70 Characteristic measuring means 80 Computer 81 Judgment means 82 Control means 200 Metal fitting alone (gas sensor)
201 Element part 202 Heater part 203 Terminal part 204 Body part 205 Protector 206 Through hole

Claims (6)

被測定物の特性値の測定又は電気処理を行う特性測定方法において、
前記被測定物に所定の間隔に離間して2つのプローブピンを配して前記被測定物と前記プローブピンが接触する2点間の抵抗値を測定し、
前記抵抗値に基づいて前記プローブピンと前記被測定物との間の接触抵抗が所定の値以上か否かを判断し、
前記接触抵抗が前記所定の値以上と判断した場合に、前記プローブピンと前記被測定物との間の接触抵抗を低減する、
ことを特徴とする特性測定方法。
In the characteristic measurement method of measuring the characteristic value of the measured object or performing the electrical processing,
Disposing two probe pins at a predetermined interval on the device under test and measuring a resistance value between two points at which the device under test and the probe pins are in contact with each other;
Determine whether the contact resistance between the probe pin and the device under test is equal to or greater than a predetermined value based on the resistance value,
If the contact resistance is determined to be equal to or more than the predetermined value, reduce the contact resistance between the probe pin and the device under test,
A characteristic measuring method characterized in that:
前記被測定物の抵抗値に基づいて前記プローブピンと前記被測定物との間の接触抵抗が所定の値以上か否かを判断する前に、前記プローブピンと前記被測定物との間の接触抵抗を低減することを特徴とする請求項1に記載の特性測定方法。Before determining whether the contact resistance between the probe pin and the DUT is equal to or greater than a predetermined value based on the resistance value of the DUT, the contact resistance between the probe pin and the DUT is determined. The characteristic measuring method according to claim 1, wherein the characteristic is reduced. 前記接触抵抗が前記所定の値以上と判断し、前記接触抵抗を低減した後に、再び前記所定の値以上か否かを判断することを特徴とする請求項1又は2に記載の特性測定方法。3. The characteristic measuring method according to claim 1, wherein the contact resistance is determined to be equal to or more than the predetermined value, and after the contact resistance is reduced, it is determined whether the contact resistance is equal to or more than the predetermined value. 前記プローブピン間に所定量の電流を印加することにより前記プローブピンと前記被測定物との間の接触抵抗を低減することを特徴とする請求項2又は3に記載の特性測定方法。4. The characteristic measuring method according to claim 2, wherein a contact resistance between the probe pin and the device under test is reduced by applying a predetermined amount of current between the probe pins. 前記所定量の電流は、1A以上であることを特徴とする請求項4に記載の特性測定方法。The method according to claim 4, wherein the predetermined amount of current is 1A or more. 被測定物の特性値の測定又は電気処理を行う特性測定装置において、
前記被測定物に所定の間隔に離間して配される2つのプローブピンと、
前記被測定物と前記プローブピンが接触する2点間の抵抗値を測定する抵抗測定手段と、
前記抵抗値に基づいて前記プローブピンと前記被測定物との間の接触抵抗が所定の値以上か否かを判断する判断手段と、
前記接触抵抗が前記所定の値以上と判断した場合に、前記プローブピンと前記被測定物との間の接触抵抗を低減する接触抵抗低減手段と、
を備えることを特徴とする特性測定装置。
In a characteristic measuring device that performs measurement or electrical processing of a characteristic value of a device under test,
Two probe pins arranged at a predetermined interval on the device under test,
Resistance measuring means for measuring a resistance value between two points where the object to be measured and the probe pin are in contact with each other;
Judgment means for judging whether or not the contact resistance between the probe pin and the device under test is equal to or more than a predetermined value based on the resistance value,
When the contact resistance is determined to be equal to or greater than the predetermined value, a contact resistance reducing unit that reduces a contact resistance between the probe pin and the device under test,
A characteristic measuring device comprising:
JP2002266282A 2002-09-12 2002-09-12 Characteristics measuring method and system Withdrawn JP2004101453A (en)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101487812B (en) * 2009-01-20 2012-01-25 天津大学 Test system for resistivity-temperature characteristics and air-sensitive characteristics of components
JP2014182005A (en) * 2013-03-19 2014-09-29 Fuji Electric Co Ltd Inspection method of semiconductor device, and manufacturing method of semiconductor device using the method
CN104076122A (en) * 2014-05-26 2014-10-01 电子科技大学 Temperature continuously-adjustable point-contact gas-sensitive humidity-sensitive test cavity
WO2018101233A1 (en) * 2016-12-01 2018-06-07 日本電産リード株式会社 Resistance measurement device and resistance measurement method
KR101930846B1 (en) * 2011-12-30 2018-12-20 삼성디스플레이 주식회사 Aging system for display device and aging method using the same
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Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101487812B (en) * 2009-01-20 2012-01-25 天津大学 Test system for resistivity-temperature characteristics and air-sensitive characteristics of components
KR101930846B1 (en) * 2011-12-30 2018-12-20 삼성디스플레이 주식회사 Aging system for display device and aging method using the same
JP2014182005A (en) * 2013-03-19 2014-09-29 Fuji Electric Co Ltd Inspection method of semiconductor device, and manufacturing method of semiconductor device using the method
CN104076122A (en) * 2014-05-26 2014-10-01 电子科技大学 Temperature continuously-adjustable point-contact gas-sensitive humidity-sensitive test cavity
WO2018101233A1 (en) * 2016-12-01 2018-06-07 日本電産リード株式会社 Resistance measurement device and resistance measurement method
CN109997046A (en) * 2016-12-01 2019-07-09 日本电产理德股份有限公司 Electric resistance measuring apparatus and resistance measurement method
CN110023768A (en) * 2016-12-01 2019-07-16 日本电产理德股份有限公司 Electric resistance measuring apparatus and resistance measurement method
KR20190086463A (en) * 2016-12-01 2019-07-22 니혼덴산리드가부시키가이샤 Resistance measuring device and resistance measuring method
CN110023768B (en) * 2016-12-01 2021-11-23 日本电产理德股份有限公司 Resistance measuring device and resistance measuring method
CN109997046B (en) * 2016-12-01 2022-01-14 日本电产理德股份有限公司 Resistance measuring device and resistance measuring method
TWI761398B (en) * 2016-12-01 2022-04-21 日商日本電產理德股份有限公司 Resistance measuring device and resistance measuring method
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