JP2004066447A - Method of manufacturing structure, functional structure, and magnetic recording medium - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To supply a structure that has openings at desired positions. <P>SOLUTION: The above structure is manufactured by a manufacturing method that has (A) a process to provide a base and a press member with a plurality of convex structures, (B) a process to form a layer of a material weaker than the member on the base, (C) a process to press the member on the layer and to form concaves corresponding to the convex structures of the member on the layer, (D) a process to etch the layer for exposing at least a part of the base surface, and (E) a process to anodize the base to form openings on the base. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method for manufacturing a structure having holes. In particular, the present invention relates to a method for manufacturing a functional structure such as a magnetic recording medium by filling a hole with a functional material such as a magnetic material.
[0002]
[Prior art]
As a technology for producing a fine structure on the surface of an object, instead of conventional lithography using light or an electron beam, nano-imprinting, which forms a nanometer-sized structure by directly pressing a structure with irregularities onto a workpiece, A method called nano-imprint has been proposed as a new technique (US Pat. No. 5,772,905).
[0003]
In this method, as shown in FIG. 9, a stamper 100 having a convex structure pattern 103 having a size of several tens to several hundreds of nm processed by an electron beam or the like is pressed against a resin thin film 104 formed on a flat substrate 105. By separating the pattern, the concave / convex structure pattern is formed, the concave portion (mold region) 106 of the resin thin film is removed by reactive ion etching or the like, and the substrate 105 is etched using the resin layer as a mask. To form nanometer-sized structures 107 and 108 having In this method, in order to prevent the stamper 100 from deteriorating due to the pressing, the pressing is stopped before the convex structure 103 of the stamper 100 reaches the substrate 105 on which the resin thin film 104 is formed, and the stamper 100 is separated. In this method, even when the pressing is stopped just before the convex structure surface of the stamper reaches the resin thin film, the resin thin film may come into contact with the concave structure surface of the stamper due to the swelling of the resin due to the pressing.
[0004]
Such contact sometimes causes irregularities in the unevenness formed on the resin thin film when the stamper is separated from the resin thin film.
[0005]
[Problems to be solved by the invention]
Therefore, an object of the present invention is to provide a structure in which holes are formed at desired positions.
[0006]
[Means for Solving the Problems]
The present invention relates to a method for manufacturing a structure having holes, comprising: (A) a step of preparing a pressing member having a plurality of convex structures and a substrate; and (B) lower strength than the member on the substrate. Forming a layer using a material; (C) pressing the member against the layer to form a depression corresponding to the convex structure of the member; and (D) etching the layer. The present invention relates to a method of manufacturing a structure having holes, comprising: a step of exposing at least a part of the surface of the substrate; and (E) a step of forming holes in the substrate by anodizing the substrate.
[0007]
Further, the present invention provides a method for manufacturing a structure including a step of pressing a pressing member having a plurality of convex structures against a pattern forming layer on a layer to be processed, and a step of separating the member from the pattern forming layer. The member having a structure surface size of 500 nm or less and a height of the convex structure of 10 μm or less is used, and the thickness of the pattern forming layer is made thinner than the height of the convex structure of the member. The present invention relates to a method for manufacturing a structural body, characterized in that when the distance between the tip of a convex structure and the surface of a layer to be processed is 50 nm or less, pressing is performed so that the surface of the pattern forming layer does not contact the concave portion of the member.
[0008]
Here, the size of the convex structure surface of the pressing member is a diameter when the surface shape is a circle, and an outer diameter when the surface shape is a polygon. The height of the convex structure is several nm or more and 10 μm or less, preferably several tens nm or more and 5 μm or less.
[0009]
In the method for producing a nanostructure according to the present invention, a pattern forming layer having a thickness smaller than the height of the convex structure of the stamper is provided on the surface of the layer to be processed, and the stamper is pressed against the pattern forming layer to face the pattern forming layer. It is preferable to form a convex structure pattern of the stamper on the substrate.
[0010]
By using a pattern forming layer that is thinner than the height of the convex structure of the stamper, the effects of bubbles are reduced, a vacuum atmosphere is not required, and anodic oxidation is performed after the layer to be processed is exposed by etching after pressing. Is processed. There is no need to perform strict position control in the pressing direction, and a simple nanoprinting method can be provided.
[0011]
BEST MODE FOR CARRYING OUT THE INVENTION
Embodiments of the present invention include the following.
[0012]
As shown in FIG. 4, the stamper (pressing member) on which the pattern of the convex structure is formed and the work layer on which the pattern forming layer is provided are opposed to each other, and the stamper is pressed against the pattern forming layer. It is preferable to form the convex structure pattern of the stamper in the pattern forming layer by separating the stamper after at least the tip of the convex structure approaches a position at a maximum of 50 nm from the surface of the processing target layer.
[0013]
When the pattern forming layer is made of a material having a low viscosity in proportion to a rise in temperature, it is preferable that the pattern forming layer is heated so as to have an appropriate viscosity at the time of pressing, then pressed, cooled, and peeled. .
[0014]
As shown in FIGS. 2A and 2B, in the nanostructure manufactured by the manufacturing method, the layer to be processed is exposed at a concave portion of the pattern forming layer by a dry etching or wet etching technique (step). 2) is preferable, and as shown in FIG. 2 (c), a method of forming a concave structure in the layer to be processed by anodizing a nanostructure produced by any of the above-described production methods is preferable.
[0015]
In the step of exposing the layer to be processed, the method may be dry etching or wet etching in which the layer to be processed in the concave portion of the pattern forming layer is exposed and a concave portion having a depth of 1 nm or more is formed in the layer to be processed. Preferred (FIG. 2 (b)).
[0016]
It is preferable that the stamper has at least one pair of adjacent concave-convex structures in which the interval between the convex structures is 1 μm or less.
[0017]
It is preferable that the pattern forming layer is a fluid material that can be applied thinly, such as a resin dissolved in a solvent, a resin material containing alkoxide or silicon, or silsesquioxane.
[0018]
Preferably, the layer to be processed is a metal containing aluminum as a component.
[0019]
It is preferable that the layer to be processed comprises a base layer containing a metal other than aluminum as a component and a surface layer containing aluminum as a component.
[0020]
In the method for manufacturing a nanostructure according to the present invention, as shown in FIG. 1, a processing target having a stamper 1 on which a pattern of a convex structure 4 is formed and a pattern forming layer 2 having a thickness smaller than the height of the convex structure 4. The layers 3 are opposed to each other, the stamper 1 is pressed, and at least the tip of the convex structure 4 is made to approach within a range of 50 nm at a maximum from the surface of the layer 3 to be processed. Preferably, a structural pattern is formed.
[0021]
For example, the stamper 1 having at least one unevenness is manufactured by lithography using an electron beam, X-ray, ultraviolet light, visible light, or the like, and wet etching or dry etching technology, electron beam direct writing technology, or anodization. The surface of the convex structure 4 is preferably flat, and when a plurality of convex structures 4 are formed, it is preferable that each vertex is located in the same plane. Further, as shown in FIG. 5A, the convex structure is preferably a triangular lattice-shaped columnar array structure. Further, as shown in FIG. 5B, a multi-period array having several types of regular structures may be used.
[0022]
Further, as shown in FIG. 1, a fluid and a thin resin such as a resin dissolved in a solvent, an alkoxide or silicon, a silsesquioxane, or the like can be applied onto the layer 3 to be processed by spin coating or the like. A liquid material containing the material as a main component is applied to form a pattern forming layer 2. The thickness of the pattern forming layer 2 is set to be smaller than the height of the convex structure 4 of the stamper 1. Next, the stamper 1 is opposed to the pattern forming layer 2 and then pressed, and after at least the tip of the convex structure 4 of the stamper 1 reaches a range of up to 50 nm from the surface of the processing target layer 3, the stamper is separated. The convex structure pattern 4 of the stamper 1 is formed on the formation layer 2. The pressing member is a regularly arranged convex structure whose surface layer is made of silicon, nickel or the like, and it is desirable to apply a release material such as a fluororesin or a silane coupling agent in order to improve releasability.
[0023]
Since the thickness of the pattern forming layer 2 is smaller than the height of the stamper convex structure 4, it is less likely that bubbles accumulated in the stamper concave structure 5 and hindering the pattern formation will affect the pattern forming layer. Therefore, there is no need to press and separate in a vacuum atmosphere. It is also preferable to raise the temperature of the workpiece 9 to a temperature at which the viscosity of the pattern forming layer 2 decreases, improve the fluidity, and then press the workpiece 9.
[0024]
In addition, it is preferable to dry-etch or wet-etch the structure thus manufactured to remove the pattern forming layer 2 remaining in the pattern forming layer concave portion 7 and expose the processing target layer 3 (FIG. 2A ), (B)).
[0025]
For example, when the processed layer 3 is a conductive substance such as a metal and the pattern forming layer 2 is an insulator such as a resin, the exposed processed layer 3 is used as an electrode by using the pattern forming layer 2 after pattern formation as a mask. Electroplating can be performed. Thereafter, a structure made of a different material having a concavo-convex structure similar to that of the stamper 1 can be obtained by immersion in a solution in which only the pattern forming layer 2 is dissolved.
[0026]
Further, as shown in FIG. 2C, when the layer to be processed 3 is a material containing aluminum as a main component, the layer to be processed obtained by etching the film remaining at the bottom of the concave portion 7 of the pattern forming layer is formed. If anodic oxidation is performed with the exposed portion as a starting point, alumina nanoholes reflecting the pattern of the exposed portion can be obtained. When the pattern forming layer is dissolved by the anodic oxidation solution, as shown in FIG. 6, a thin metal such as aluminum which is dissolved at the time of anodic oxidation is laminated thereon to form the protective layer 11 (FIG. b)), anodic oxidation may be performed (FIG. 6C).
[0027]
In addition, as shown in FIG. 7, when the exposed portion of the layer to be processed is slightly removed during etching, the pattern formation layer is removed (FIG. 7B), and then anodic oxidation may be performed (FIG. 7C). )).
Specifically, the anodic oxidation is to immerse the processed layer having the pattern forming layer as an anode in an acidic solution such as an oxalic acid aqueous solution or a sulfuric acid aqueous solution, and apply an electrolysis to perform the anodic oxidation. Oxidation and dissolution by anodic oxidation start preferentially from the concave structure portion of the pattern forming layer, so that pores having an arrangement reflecting the concave structure pattern are formed. The voltage applied at this time is generally 2.5 ⁻¹ [V / nm] times the array period to be formed. For example, in the case of a triangular lattice array at 100 nm intervals, 40 V may be applied. The average period length of the pores formed by the above is determined. Therefore, for example, when a regular concave structure having a triangular lattice shape is formed in the pattern forming layer 2 and pores are formed from the concave portions 7, even if the arrangement of the regular concave structure is somewhat disturbed, it is naturally corrected by the anodizing applied voltage. It is possible to obtain a regular array of pores.
[0028]
If the pattern forming layer is made of a material that can be uniformly dissolved by the anodic oxidation solution at an appropriate rate, the etching process can be omitted. When the anodic oxidation is started, the pattern forming layer starts dissolving, and first, the layer to be processed at the bottom of the concave structure is exposed, and a current flows therefrom to start forming nanoholes in the layer to be processed. If the pattern forming layer is made of a material that is not dissolved by the anodizing solution, nothing is formed on the surface of the layer to be processed.
[0029]
Next, by immersing this in a solution for dissolving the layer to be processed, such as a phosphoric acid aqueous solution, the diameter of the formed nanohole structure can be arbitrarily enlarged.
[0030]
Further, by filling the hole with a functional material by electrodeposition or sputtering, a structure having various functions can be obtained. In particular, it is possible to prepare a magnetic recording medium by filling the pores with a magnetic material by electrodeposition.
[0031]
【Example】
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
[0032]
[Example 1]
1 shows an example of the present invention. Please refer to FIG.
[0033]
The stamper 1 on which the pattern of the concavo-convex structure is formed is pressed to face the processing layer 3 having the pattern forming layer 2 having a thickness smaller than the height of the protruding structure 4 so that at least the tip of the protruding structure 4 has the processing layer. 3 are separated from each other after approaching 30 nm from the surface of the stamper 3 to form a convex structure pattern of the stamper 1 on the pattern forming layer 2.
[0034]
As an example, a stamper 1 is formed on a master by forming a columnar convex structure 4 having a diameter of 30 nm and a height of 75 nm arranged at intervals of 100 nm by electron beam exposure and a dry etching process. Next, as shown in FIG. 1, a processing layer 3 made of silicon oxide (SiO ₂ ) having a thickness of 100 nm and a pattern forming layer 2 made of polymethyl methacrylate (PMMA) having a thickness of 50 nm are formed on a Si substrate 8. I do. PMMA is dissolved in ethyl cellosolve acetate and applied by spin coating. The stamper 1 is opposed to the pattern forming layer 2, pressed at a substrate temperature of 120 ° C. under a load of 1000 kgf / cm ² , held for 30 seconds, cooled to 60 ° C., and then separated (FIGS. 1A and 1B). The height of the convex structure 6 of the pattern forming layer 2 is slightly thicker than the thickness before pressing because the resin corresponding to the volume of the concave structure 7 flows, and remains at the bottom of the concave structure 7 due to the unevenness of the stamper shape. The resin remains as a thin film.
[0035]
Since the thickness of the pattern forming layer 2 is smaller than that of the stamper convex structure 4, air bubbles that have conventionally accumulated in the stamper concave structure 5 and hindered pattern formation are transmitted between the stamper concave structures and released to the outside. It is possible to produce a fine pattern without using means such as pressing, and to reduce the pressing pressure because the contact area is small. In addition, the height of the pattern forming layer protrusions 6 after pattern formation is also determined by the initial film thickness of the pattern forming layer 2 and the shape of the stamper 1. Therefore, it is necessary to perform fine adjustment of the pressing load and position control of the pressing direction. There is no.
[0036]
[Example 2]
1 shows an example of the present invention. Please refer to FIG.
[0037]
The structure manufactured by the method for manufacturing a nanostructure described in Example 1 is subjected to dry etching or wet etching to remove the resin material remaining in the concave portions 7 of the pattern formation layer, thereby exposing the layer 3 to be processed. .
[0038]
The stamper 1 described in the first embodiment is applied to a workpiece 9 in which the processing layer 3 is aluminum (Al) having a thickness of 100 nm and the pattern forming layer 2 is PMMA, at a substrate temperature of 120 ° C. and a load of 1000 kgf / cm ^2, pressing by opposed under the conditions of retention time of 30 seconds and then pulled away was cooled to 60 ° C. to produce a structure as shown in FIG. 1 (c). Dry etching is performed in an oxygen atmosphere to remove the resin remaining in the concave portions 7 of the pattern forming layer, thereby exposing Al (FIG. 2A). Also, etching can be performed in an atmosphere such as a mixed gas of BCl ₃ and O ₂ gas, and Al under the pattern forming layer concave portion 7 can be simultaneously etched to form a concave portion (FIG. 2B).
[0039]
Thereafter, tin-copper solder electroplating is performed using the pattern forming layer convex portion 6 as a mask and the layer to be processed 3 as an electrode, and only the pattern forming layer convex portion 6 is removed by ultrasonic cleaning with acetone. Can be manufactured.
[0040]
Also, as shown in FIG. 3A, a laminated film 10 of a desired material is formed by sputtering or the like, and only the projections 6 of the pattern forming layer are removed by ultrasonic cleaning with acetone, as shown in FIG. A convex structure can also be manufactured.
[0041]
[Example 3]
1 shows an example of the present invention. Please refer to FIG.
[0042]
The stamper 1 described in Example 1 was applied to a workpiece 9 in which the processing layer 3 was Al and the pattern forming layer 2 was silsesquioxane, at a substrate temperature of room temperature, a load of 1200 kgf / cm ² , and a holding time. The layers are pressed against each other under a condition of 30 seconds, then separated, and dry-etched in an atmosphere of argon or SF ₆ to expose Al (FIG. 2A). Next, this is used as an anode in a 0.3 mol / L oxalic acid aqueous solution, and anodization is performed by applying 40 V at a temperature of 16 ° C. Since the exposed portion serves as a starting point of anodic oxidation, it is possible to obtain a nanometer-sized hole having a high aspect ratio and reflecting the pattern of the pattern forming layer (FIG. 2C). Since silsesquioxane is insoluble in oxalic acid aqueous solution, there is no need to remove it.
[0043]
[Example 4]
1 shows an example of the present invention. Please refer to FIG.
[0044]
The stamper 1 on which the pattern of the concavo-convex structure is formed is pressed against the layer to be processed 3 having the pattern forming layer 2, and then separated to form a concave structure pattern on the pattern forming layer 2 which is opposite to the convex structure of the stamper 1. I do.
[0045]
As an example, a stamper 1 is formed by forming a columnar convex structure 4 having a diameter of 30 nm and a height of 75 nm arranged in a triangular lattice at intervals of 100 nm on a master made of Si by electron beam lithography and a dry etching process. The highest surface of the convex structure 4 is desirably located on the same plane. Next, as shown in FIG. 4, a 100 nm thick processing layer 3 made of silicon oxide (SiO ₂ ) and a 100 nm thick pattern forming layer 2 made of polymethyl methacrylate (PMMA) are formed on a substrate 8 made of Si. Is prepared. PMMA is dissolved in ethyl cellosolve acetate and applied by spin coating. The stamper 1 is opposed to the pattern forming layer 2, pressed at a substrate temperature of 120 ° C. and a load of 500 kgf / cm ² , cooled to 60 ° C. while keeping the state, and then separated (FIGS. 4A, 4 B, and 4 B). c)). Since the resin corresponding to the volume of the concave structure 7 flows, the thickness around the pressed portion of the pattern forming layer 2 is slightly thicker than the thickness before the pressing, and the bottom of the concave structure 7 has uneven stamper shape and unevenness. Residual resin resulting from the inability to flow completely remains as a thin film.
[0046]
Depending on the pattern shape, air bubbles remain in the concave structure 5 of the stamper 1 and the flow of the resin is hindered, making it difficult to form a pattern completely conforming to the shape of the stamper. This effect can be reduced by improving the property or making the thickness of the pattern forming layer 2 thinner than the convex structure 4.
[0047]
[Example 5]
1 shows an example of the present invention. Please refer to FIG.
[0048]
The structure manufactured by the method for manufacturing a nanostructure described in Example 4 is subjected to dry etching or wet etching to remove the resin material remaining in the concave portions 7 of the pattern forming layer, thereby exposing the layer 3 to be processed. .
[0049]
The stamper 1 according to the fourth embodiment is applied to a workpiece 9 in which the processing layer 3 formed on the Si substrate 8 is aluminum (Al) having a thickness of 200 nm and the pattern forming layer 2 is PMMA. The substrate is pressed against each other at a substrate temperature of 120 ° C. and a load of 500 kgf / cm ² , cooled down to 60 ° C. while keeping the state, and then separated to produce a structure as shown in FIG. 4C. Etching is performed in an oxygen atmosphere by dry etching to remove only the resin remaining in the concave portions 7 of the pattern formation layer, thereby exposing Al (FIG. 6A). Next, as shown in FIG. 6B, a 5 nm-thick Al protective layer 11 is formed by sputtering, and this is used as an anode and immersed in an oxalic acid aqueous solution (0.3 mol / L, 16 ° C.). When the anodic oxidation is performed under the applied voltage, alumina nanoholes as shown in FIG. 6C are formed. The nanoholes are formed from the concave portions 7 of the pattern forming layer, and are arranged in a triangular lattice at 100 nm intervals. The protective layer 11 serves to prevent the pattern forming layer 2 from being attacked in an acidic solution, and can be removed by performing ultrasonic cleaning in a solution that dissolves aluminum, such as a phosphoric acid aqueous solution. Similarly, PMMA can also be removed by ultrasonic cleaning in a solvent such as an aqueous phosphoric acid solution or acetone.
[0050]
[Example 6]
1 shows an example of the present invention. Please refer to FIG.
[0051]
In the steps of the method for manufacturing a nanostructure described in Example 5 or Example 2, dry etching was performed in a mixed etching atmosphere of BCl ₃ and O ₂ , and the resin remaining under the concave portion 7 of the pattern forming layer was removed. And Al are simultaneously etched to form a recess on the Al surface (FIG. 7A). Thereafter, PMMA is removed by ultrasonic cleaning in acetone or removed by ozone ashing (FIG. 7 (b)), and this is used as an anode in an oxalic acid aqueous solution (0.3 mol / L, 16 ° C.). When immersion is performed and anodic oxidation is performed under an applied voltage of 40 V, alumina nanoholes as shown in FIG. 7C are formed. The nanoholes are formed from the concave portions 13 on the Al surface, and are arranged in a triangular lattice at 100 nm intervals.
[0052]
[Example 7]
1 shows an example of the present invention. Referring to FIG.
[0053]
The pressing member on which the pattern of the concavo-convex structure is formed is pressed against the layer to be processed having the pattern forming layer so as to face each other, and then separated to form a concave structure pattern on the pattern forming layer which is opposite to the convex structure of the pressing member.
Next, a 10-nm-thick titanium film and a 500-nm-thick aluminum film are further formed on the 10-nm-thick titanium film on a substrate made of Si to form a target layer. Further, a pattern forming layer made of aluminum alkoxide and having a thickness of 75 nm is further formed thereon. The aluminum alkoxide is dissolved in IPA (isopropyl alcohol) and then applied by spin coating. The pressing member described in Example 4 is opposed to the pattern forming layer, pressed at a substrate temperature of 150 ° C. under a load of 1000 kgf / cm ² , cooled down to 60 ° C. while keeping the state, and then separated. Because the resin of the volume of the concave structure flows, the thickness around the pressed part of the pattern forming layer becomes slightly thicker than the thickness before pressing, and the bottom of the concave structure has non-uniformity of the pressing member shape and the flow Residual resin resulting from the failure is left as a thin film.
[0054]
Next, this is used as an anode, immersed in an aqueous oxalic acid solution (0.3 mol / L, 16 ° C.), and anodized by applying a voltage of 40 V. Since aluminum alkoxide is hydrolyzed and gradually dissolved in oxalic acid aqueous solution, current starts to flow from the bottom of the concave structure where the layer to be processed is exposed first, and that part becomes the starting point and the formation of alumina nanoholes starts I do. Alumina nanoholes formed by anodic oxidation are formed perpendicular to the substrate, and a structure having a high aspect ratio that cannot be obtained by ordinary photolithography or etching processes can be obtained very easily.
[0055]
When immersed in a phosphoric acid aqueous solution (0.3 mol / L) for about 40 minutes, ordered alumina nanoholes having a diameter of 30 nm and a depth of 500 nm are obtained.
[0056]
Finally, a magnetic recording medium can be prepared by filling the holes with a magnetic material by electrodeposition.
[0057]
【The invention's effect】
The present invention is a method for manufacturing a nanostructure by a nanoimprint method and dry etching, wet etching, or anodic oxidation, and can easily manufacture a fine concave nanostructure.
[Brief description of the drawings]
FIG. 1 is a sectional view illustrating a first embodiment of the present invention.
FIG. 2 is a sectional view illustrating Embodiments 2 and 3 of the present invention.
FIG. 3 is a sectional view illustrating Embodiments 2 and 3 of the present invention.
FIG. 4 is a sectional view illustrating a fourth embodiment of the present invention.
FIG. 5 is a cross-sectional view illustrating an arrangement example of a convex structure according to the present invention.
FIG. 6 is a sectional view illustrating a fifth embodiment of the present invention.
FIG. 7 is a sectional view illustrating a sixth embodiment of the present invention.
FIG. 8 is a sectional view illustrating a seventh embodiment of the present invention.
FIG. 9 is a diagram illustrating a conventional example.
[Explanation of symbols]
REFERENCE SIGNS LIST 1 stamper 2 pattern forming layer 3 processed layer 4 convex structure 5 concave structure 6 pattern forming layer convex portion 7 pattern forming layer concave portion 8 substrate 9 workpiece 10 laminated film 100 stamper 103 convex structure 104 resin thin film 105 substrate 106 mold region 107 Convex structure 108 Concave structure

Claims (10)

A method for producing a structure having holes,
(A) a step of preparing a pressing member having a plurality of convex structures and a substrate;
(B) forming a layer on the substrate using a material having a lower strength than the member;
(C) pressing the member against the layer to form a depression in the layer corresponding to the convex structure of the member;
(D) etching the layer to expose at least a portion of the substrate surface; and
(E) anodizing the substrate to form holes in the substrate. The method according to claim 1, wherein in the step (A), the plurality of convex structures are regularly formed on the member. The method according to claim 1 or 2, wherein the step (D) is etching using hydrolysis. The method according to any one of claims 1 to 3, wherein the layer formed in the step (B) contains an alkoxide. The method according to any one of claims 1 to 4, wherein the step (D) and the step (E) are performed simultaneously. The method according to any one of claims 1 to 5, wherein in the step (A), the height of the protrusion is higher than a thickness of a layer formed of a material having lower strength than the member. In the step (D), after the step of exposing a part of the substrate surface, a conductive material that is not dissolved by the solution used in the anodic oxidation described in the step (E) and is dissolved by the anodic oxidation 7. The method according to claim 1, further comprising a step of forming a film on the surface of the substrate. A method for manufacturing a functional structure, comprising a step of filling a functional material into holes of the structure formed by the manufacturing method according to claim 1. A method for manufacturing a magnetic recording medium, wherein the functional material according to claim 8 is a magnetic material. A step of pressing a pressing member having a plurality of convex structures against a pattern forming layer on a layer to be processed, and a method of manufacturing a structure including a step of separating the member and the pattern forming layer,
The size of the convex structure surface is 500 nm or less,
And using the member having a height of the convex structure of 10 μm or less,
Reducing the thickness of the pattern forming layer from the height of the convex structure of the member,
When the distance between the tip of the convex structure of the member and the surface of the layer to be processed is 50 nm or less, pressing is performed so that the surface of the pattern forming layer does not contact the concave portion of the member. .

Images