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JP2003234513A - Resin for wavelength conversion light emitting diode to which fluorescent dye or fluorescent pigment is added - Google Patents

Resin for wavelength conversion light emitting diode to which fluorescent dye or fluorescent pigment is added

Info

Publication number
JP2003234513A
JP2003234513A JP2003067318A JP2003067318A JP2003234513A JP 2003234513 A JP2003234513 A JP 2003234513A JP 2003067318 A JP2003067318 A JP 2003067318A JP 2003067318 A JP2003067318 A JP 2003067318A JP 2003234513 A JP2003234513 A JP 2003234513A
Authority
JP
Japan
Prior art keywords
light
light emitting
emitting diode
fluorescent
wavelength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2003067318A
Other languages
Japanese (ja)
Inventor
Yoshiaki Tadatsu
芳昭 多田津
Shuji Nakamura
修二 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Chemical Industries Ltd
Original Assignee
Nichia Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Chemical Industries Ltd filed Critical Nichia Chemical Industries Ltd
Priority to JP2003067318A priority Critical patent/JP2003234513A/en
Publication of JP2003234513A publication Critical patent/JP2003234513A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H10W72/07554
    • H10W72/547
    • H10W74/00
    • H10W90/756

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

(57)【要約】 【課題】 窒化ガリウム系化合物半導体材料よりなる発
光素子を有する発光ダイオードの視感度を良くし、また
その輝度を向上させる。 【解決手段】 n型及びp型に積層された窒化ガリウム
系化合物半導体である発光素子からの光を変換する蛍光
染料又は蛍光顔料が添加された波長変換発光ダイオード
用樹脂において、前記波長変換発光ダイオード用樹脂中
の蛍光染料又は蛍光顔料は、発光素子からの青色の可視
光により励起されて、励起波長よりも長波長の可視光を
出して発光ダイオードの視感度を良くして成ることを特
徴とする蛍光染料又は蛍光顔料が添加された波長変換発
光ダイオード用樹脂。
(57) Abstract: To improve the visibility of a light-emitting diode having a light-emitting element made of a gallium nitride-based compound semiconductor material and to improve the luminance thereof. A wavelength-converting light-emitting diode resin to which a fluorescent dye or a fluorescent pigment for converting light from a light-emitting element that is a gallium nitride-based compound semiconductor stacked on an n-type and a p-type is added. The fluorescent dye or fluorescent pigment in the resin is excited by blue visible light from the light emitting element, emits visible light longer than the excitation wavelength, and improves the visibility of the light emitting diode. For a wavelength conversion light emitting diode to which a fluorescent dye or a fluorescent pigment is added.

Description

【発明の詳細な説明】 【0001】 【産業上の利用分野】本発明は発光素子を樹脂モールド
で包囲してなる発光ダイオード(以下LEDという)に
係り、特に一種類の発光素子で多種類の発光ができ、さ
らに高輝度な波長変換発光ダイオードに関する。 【0002】 【従来の技術】一般に、LEDは図1に示すような構造
を有している。1は1mm角以下に切断された例えばG
aAlAs、GaP等よりなる発光素子、2はメタルス
テム、3はメタルポスト、4は発光素子を包囲する樹脂
モールドである。発光素子1の裏面電極はメタルステム
2に銀ペースト等で接着され電気的に接続されており、
発光素子1の表面電極は他端子であるメタルポスト3か
ら伸ばされた金線によりその表面でワイヤボンドされ、
さらに発光素子1は透明な樹脂モールド4でモールドさ
れている。 【0003】通常、樹脂モールド4は、発光素子の発光
を空気中に効率よく放出する目的で、屈折率が高く、か
つ透明度の高い樹脂が選択されるが、他に、その発光素
子の発光色を変換する目的で、あるいは色を補正する目
的で、その樹脂モールド4の中に着色剤として無機顔
料、または有機顔料が混入される場合がある。例えば、
GaPの半導体材料を有する緑色発光素子の樹脂モール
ド中に、赤色顔料を添加すれば発光色は白色とすること
ができる。 【0004】 【発明が解決しようとする課題】しかしながら、従来、
樹脂モールドに着色剤を添加して波長を変換するという
技術はほとんど実用化されておらず、着色剤により色補
正する技術がわずかに使われているのみである。なぜな
ら、樹脂モールドに、波長を変換できるほどの非発光物
質である着色剤を添加すると、LEDそのもの自体の輝
度が大きく低下してしまうからである。 【0005】ところで、現在、LEDとして実用化され
ているのは、赤外、赤、黄色、緑色発光のLEDであ
り、青色または紫外のLEDは未だ実用化されていな
い。青色、紫外発光の発光素子はII−VI族のZnS
e、IV−IV族のSiC、III−V族のGaN等の
半導体材料を用いて研究が進められ、最近、その中でも
一般式がGaxAll−xN(但しxは0≦x≦1であ
る。)で表される窒化ガリウム系化合物半導体が、常温
で、比較的優れた発光を示すことが発表され注目されて
いる。また、窒化ガリウム系化合物半導体を用いて、初
めてpn接合を実現したLEDが発表されている(応用
物理,60巻,2号,p163〜p166,199
1)。それによるとpn接合の窒化ガリウム系化合物半
導体を有するLEDの発光波長は、主として430nm
付近にあり、さらに370nm付近の紫外域にも発光ピ
ークを有している。その波長は上記半導体材料の中で最
も短い波長である。しかし、そのLEDは発光波長が示
すように紫色に近い発光色を有しているため視感度が悪
いという欠点がある。 【0006】本発明はこのような事情を鑑みなされたも
ので、その目的とするところは、発光ピークが430n
m付近、および370nm付近にある窒化ガリウム系化
合物半導体材料よりなる発光素子を有するLEDの視感
度を良くし、またその輝度を向上させることにある。 【0007】 【課題を解決するための手段】本発明は、n型及びp型
に積層された窒化ガリウム系化合物半導体である発光素
子からの光を変換する蛍光染料又は蛍光顔料が添加され
た波長変換発光ダイオード用樹脂において、前記波長変
換発光ダイオード用樹脂中の蛍光染料又は蛍光顔料は、
発光素子からの青色の可視光により励起されて、励起波
長よりも長波長の可視光を出して発光ダイオードの視感
度を良くして成ることを特徴とする蛍光染料又は蛍光顔
料が添加された波長変換発光ダイオード用樹脂である。 【0008】 【発明の実施の形態】図2は本発明のLEDの構造を示
す一実施例である。11はサファイア基板の上にGaA
lNがn型およびp型に積層されてなる青色発光素子、
2および3は図1と同じくメタルステム、メタルポス
ト、4は発光素子を包囲する樹脂モールドである。発光
素子11の裏面はサファイアの絶縁基板であり裏面から
電極を取り出せないため、GaAlN層のn電極をメタ
ルステム2と電気的に接続するため、GaAlN層をエ
ッチングしてn型層の表面を露出させてオーミック電極
を付け、金線によって電気的に接続する手法が取られて
いる。また他の電極は図1と同様にメタルポスト3から
伸ばした金線によりp型層の表面でワイヤボンドされて
いる。さらに樹脂モールド4には420〜440nm付
近の波長によって励起されて480nmに発光ピークを
有する波長を発光する蛍光染料5が添加されている。 【0009】 【発明の効果】蛍光染料、蛍光顔料は、一般に短波長の
光によって励起され、励起波長よりも長波長光を発光す
る。逆に長波長の光によって励起されて短波長の光を発
光する蛍光顔料もあるが、それはエネルギー効率が非常
に悪く微弱にしか発光しない。前記したように窒化ガリ
ウム系化合物半導体はLEDに使用される半導体材料中
で最も短波長側にその発光ピークを有するものであり、
しかも紫外域にも発光ピークを有している。そのためそ
れを発光素子の材料として使用した場合、その発光素子
を包囲する樹脂モールドに蛍光染料、蛍光顔料を添加す
ることにより、最も好適にそれら蛍光物質を励起するこ
とができる。したがって青色LEDの色補正はいうにお
よばず、蛍光染料、蛍光顔料の種類によって数々の波長
の光を変換することができる。さらに、短波長の光を長
波長に変え、エネルギー効率がよい為、添加する蛍光染
料、蛍光顔料が微量で済み、輝度の低下の点からも非常
に好都合である。
Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode (hereinafter, referred to as an LED) in which a light emitting element is surrounded by a resin mold. The present invention relates to a wavelength conversion light emitting diode capable of emitting light and having high luminance. 2. Description of the Related Art Generally, an LED has a structure as shown in FIG. 1 is, for example, G cut into 1 mm square or less.
A light emitting element made of aAlAs, GaP, or the like, 2 is a metal stem, 3 is a metal post, and 4 is a resin mold surrounding the light emitting element. The back electrode of the light emitting element 1 is electrically connected to the metal stem 2 by bonding with a silver paste or the like.
The surface electrode of the light emitting element 1 is wire-bonded on its surface with a gold wire extended from a metal post 3 as another terminal,
Further, the light emitting element 1 is molded with a transparent resin mold 4. Usually, a resin having a high refractive index and high transparency is selected for the resin mold 4 in order to efficiently emit light emitted from the light emitting element into the air. In some cases, an inorganic pigment or an organic pigment is mixed as a colorant into the resin mold 4 for the purpose of converting the color or correcting the color. For example,
If a red pigment is added to the resin mold of the green light emitting device having a GaP semiconductor material, the emission color can be white. [0004] However, conventionally,
The technique of adding a colorant to a resin mold to convert the wavelength has hardly been put to practical use, and the technique of correcting the color with a colorant has been used only slightly. This is because the addition of a coloring agent, which is a non-light emitting substance that can convert the wavelength, to the resin mold greatly reduces the brightness of the LED itself. [0005] By the way, currently, LEDs that are put into practical use as LEDs are LEDs that emit infrared, red, yellow, and green light, and blue or ultraviolet LEDs have not yet been put into practical use. The blue and ultraviolet light emitting elements are II-VI group ZnS.
e, studies have been made using semiconductor materials such as SiC of the IV-IV group and GaN of the III-V group, and recently, among them, the general formula is GaxAll -xN (where x is 0 ≦ x ≦ 1). The gallium nitride-based compound semiconductor represented by the formula (1) has been reported to exhibit relatively excellent light emission at room temperature, and has attracted attention. Also, an LED that realizes a pn junction for the first time using a gallium nitride-based compound semiconductor has been announced (Applied Physics, Vol. 60, No. 2, p163-p166, 199).
1). According to this, the emission wavelength of an LED having a pn junction gallium nitride-based compound semiconductor is mainly 430 nm.
And also has an emission peak in the ultraviolet region around 370 nm. The wavelength is the shortest wavelength among the semiconductor materials. However, the LED has an emission color close to purple as indicated by the emission wavelength, and thus has a disadvantage that visibility is poor. The present invention has been made in view of such circumstances, and an object of the present invention is to achieve a light emission peak of 430 n.
An object of the present invention is to improve the visibility of an LED having a light emitting element made of a gallium nitride-based compound semiconductor material in the vicinity of m and in the vicinity of 370 nm, and to improve its luminance. SUMMARY OF THE INVENTION The present invention relates to a wavelength-added fluorescent dye or fluorescent pigment for converting light from a light emitting device which is a gallium nitride-based compound semiconductor stacked in n-type and p-type. In the conversion light emitting diode resin, the fluorescent dye or the fluorescent pigment in the wavelength conversion light emitting diode resin,
A wavelength to which a fluorescent dye or a fluorescent pigment is added, which is excited by blue visible light from the light emitting element and emits visible light longer than the excitation wavelength to improve the visibility of the light emitting diode. Conversion light emitting diode resin. FIG. 2 is an embodiment showing the structure of an LED according to the present invention. 11 is GaAs on a sapphire substrate
a blue light-emitting element in which 1N is stacked in n-type and p-type,
Reference numerals 2 and 3 denote a metal stem and a metal post as in FIG. 1, and reference numeral 4 denotes a resin mold surrounding the light emitting element. Since the back surface of the light emitting element 11 is an insulating substrate of sapphire and electrodes cannot be taken out from the back surface, the GaAlN layer is etched to expose the surface of the n-type layer to electrically connect the n electrode of the GaAlN layer to the metal stem 2. Then, a method of attaching an ohmic electrode and electrically connecting it with a gold wire has been adopted. The other electrodes are wire-bonded on the surface of the p-type layer by gold wires extending from the metal posts 3 as in FIG. Further, a fluorescent dye 5 which emits at a wavelength having an emission peak at 480 nm when excited by a wavelength around 420 to 440 nm is added to the resin mold 4. The fluorescent dye and the fluorescent pigment are generally excited by light having a short wavelength, and emit light having a wavelength longer than the excitation wavelength. Conversely, some fluorescent pigments emit short-wavelength light when excited by long-wavelength light, but they have very poor energy efficiency and emit only weakly. As described above, a gallium nitride-based compound semiconductor has an emission peak on the shortest wavelength side in a semiconductor material used for an LED,
Moreover, it has an emission peak also in the ultraviolet region. Therefore, when it is used as a material of a light emitting element, the fluorescent substance can be most preferably excited by adding a fluorescent dye or a fluorescent pigment to a resin mold surrounding the light emitting element. Therefore, it goes without saying that it is possible to convert light of various wavelengths depending on the type of fluorescent dye or fluorescent pigment, not to mention color correction of the blue LED. Further, since short-wavelength light is converted into long-wavelength light and energy efficiency is high, only a small amount of fluorescent dye or fluorescent pigment needs to be added, which is very advantageous from the viewpoint of lowering luminance.

【図面の簡単な説明】 【図1】 従来の一LEDの構造を示す模式断面図。 【図2】 本発明のLEDの一実施例の構造を示す模式
断面図。 【符号の説明】 11・・・発光素子 2・・・メタルステム 3・・・メタルポスト 4・・・樹脂モールド 5・・・蛍光染料。
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic sectional view showing the structure of a conventional LED. FIG. 2 is a schematic sectional view showing the structure of an embodiment of the LED of the present invention. [Description of Signs] 11 ... Light-emitting element 2 ... Metal stem 3 ... Metal post 4 ... Resin mold 5 ... Fluorescent dye.

Claims (1)

【特許請求の範囲】 【請求項1】 n型及びp型に積層された窒化ガリウム
系化合物半導体である発光素子からの光を変換する蛍光
染料又は蛍光顔料が添加された波長変換発光ダイオード
用樹脂において、 前記波長変換発光ダイオード用樹脂中の蛍光染料又は蛍
光顔料は、発光素子からの青色の可視光により励起され
て、励起波長よりも長波長の可視光を出して発光ダイオ
ードの視感度を良くして成ることを特徴とする蛍光染料
又は蛍光顔料が添加された波長変換発光ダイオード用樹
脂。
Claims: 1. A wavelength-converting light-emitting diode resin to which a fluorescent dye or a fluorescent pigment for converting light from a light-emitting element that is a gallium nitride-based compound semiconductor laminated on an n-type and a p-type is added. In, the fluorescent dye or fluorescent pigment in the wavelength conversion light emitting diode resin is excited by blue visible light from the light emitting element, emits visible light longer wavelength than the excitation wavelength to improve the visibility of the light emitting diode A resin for a wavelength conversion light-emitting diode to which a fluorescent dye or a fluorescent pigment has been added.
JP2003067318A 2003-02-04 2003-02-04 Resin for wavelength conversion light emitting diode to which fluorescent dye or fluorescent pigment is added Withdrawn JP2003234513A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003067318A JP2003234513A (en) 2003-02-04 2003-02-04 Resin for wavelength conversion light emitting diode to which fluorescent dye or fluorescent pigment is added

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003067318A JP2003234513A (en) 2003-02-04 2003-02-04 Resin for wavelength conversion light emitting diode to which fluorescent dye or fluorescent pigment is added

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2001313286A Division JP3645207B2 (en) 2001-09-03 2001-09-03 Light emitting diode

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP2004011215A Division JP2004158874A (en) 2004-01-19 2004-01-19 Light emitting diode
JP2004011214A Division JP3724490B2 (en) 2004-01-19 2004-01-19 Light emitting diode
JP2004280288A Division JP3724498B2 (en) 2004-09-27 2004-09-27 Light emitting diode

Publications (1)

Publication Number Publication Date
JP2003234513A true JP2003234513A (en) 2003-08-22

Family

ID=27785866

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Country Status (1)

Country Link
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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004363635A (en) * 2004-09-27 2004-12-24 Nichia Chem Ind Ltd Light emitting diode
JP2006060254A (en) * 2005-10-31 2006-03-02 Nichia Chem Ind Ltd Light emitting diode
CN100373647C (en) * 2004-03-26 2008-03-05 京瓷株式会社 Lighting devices and lighting devices
US7878663B2 (en) 2006-10-03 2011-02-01 Canon Kabushiki Kaisha Image display apparatus
US8659034B2 (en) 1996-03-26 2014-02-25 Cree, Inc. Solid state white light emitter and display using same
US9115868B2 (en) 2011-10-13 2015-08-25 Intematix Corporation Wavelength conversion component with improved protective characteristics for remote wavelength conversion
US9739444B2 (en) 2007-03-05 2017-08-22 Intematix Corporation Light emitting diode (LED) based lighting systems
US10204888B2 (en) 2011-04-13 2019-02-12 Intematix Corporation LED-based light sources for light emitting devices and lighting arrangements with photoluminescence wavelength conversion
US10234725B2 (en) 2015-03-23 2019-03-19 Intematix Corporation Photoluminescence color display
US10557594B2 (en) 2012-12-28 2020-02-11 Intematix Corporation Solid-state lamps utilizing photoluminescence wavelength conversion components

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8963182B2 (en) 1996-03-26 2015-02-24 Cree, Inc. Solid state white light emitter and display using same
US9698313B2 (en) 1996-03-26 2017-07-04 Cree, Inc. Solid state white light emitter and display using same
US8659034B2 (en) 1996-03-26 2014-02-25 Cree, Inc. Solid state white light emitter and display using same
US8860058B2 (en) 1996-03-26 2014-10-14 Cree, Inc. Solid state white light emitter and display using same
CN100373647C (en) * 2004-03-26 2008-03-05 京瓷株式会社 Lighting devices and lighting devices
DE102005013802B4 (en) * 2004-03-26 2013-03-07 Kyocera Corp. Light-emitting device and lighting device
JP2004363635A (en) * 2004-09-27 2004-12-24 Nichia Chem Ind Ltd Light emitting diode
JP2006060254A (en) * 2005-10-31 2006-03-02 Nichia Chem Ind Ltd Light emitting diode
US7878663B2 (en) 2006-10-03 2011-02-01 Canon Kabushiki Kaisha Image display apparatus
US8376553B2 (en) 2006-10-03 2013-02-19 Canon Kabushiki Kaisha Image display apparatus having stop shape control
US9739444B2 (en) 2007-03-05 2017-08-22 Intematix Corporation Light emitting diode (LED) based lighting systems
US10204888B2 (en) 2011-04-13 2019-02-12 Intematix Corporation LED-based light sources for light emitting devices and lighting arrangements with photoluminescence wavelength conversion
US9115868B2 (en) 2011-10-13 2015-08-25 Intematix Corporation Wavelength conversion component with improved protective characteristics for remote wavelength conversion
US10557594B2 (en) 2012-12-28 2020-02-11 Intematix Corporation Solid-state lamps utilizing photoluminescence wavelength conversion components
US10234725B2 (en) 2015-03-23 2019-03-19 Intematix Corporation Photoluminescence color display

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