JP2003179270A - Semiconductor light emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve the environment resistance and ultraviolet-ray resistance of a semiconductor light emitting device. <P>SOLUTION: A semiconductor light emitting element (2) is coated directly with a coating material (10) which is made of polymetaloxane or ceramic and translucent to light such as ultraviolet rays, etc., emitted by a semiconductor light emitting element (2). The coating material (10) with the ultraviolet-ray resistance and heat resistance does not deteriorate even in a high-temperature environment wherein the coating material is irradiated with ultraviolet rays for a long period of time. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device such as a light emitting diode device, and more particularly to a semiconductor light emitting device that emits light having a wavelength of 550 nm or less and the light emitted from the semiconductor light emitting element is wavelength-converted and emitted to the outside. Semiconductor light emitting device.

[0002]

2. Description of the Related Art When a semiconductor light emitting element having a large band gap (energy gap) is used, a semiconductor light emitting device that emits light at a relatively short wavelength from visible light having a short wavelength to the ultraviolet region can be realized. As a semiconductor light emitting device that emits light of such a wavelength, GaN, GaAlN, InGaN, InGaAlN, and other nitrogen gallium compound semiconductors are new solid-state ultraviolet light sources with various advantages such as small size, low power consumption, and long life. Can be used for.

FIG. 4 is a sectional view of a conventional light emitting diode device in which the wavelength of light emitted from a light emitting diode chip is converted by a fluorescent material (7a). In the light emitting diode device (1) shown in FIG. 4, the light emitting diode chip (2) is fixed to the bottom surface (3b) of the recess (3a) of the first external terminal (3) serving as a cathode side lead, and The cathode electrode (2g) of the light emitting diode chip (2) is connected to the first wire connecting portion (9a) of the first external terminal (3) by the thin lead wire (5). In addition, the anode electrode (2
f) is connected to the second wire connecting portion (9b) of the second external terminal (4) as a lead on the anode side by the second thin lead wire (6). The light emitting diode chip (2) fixed to the recess (3a) is covered with a light-transmissive protective resin (7) filled in the recess (3a) and containing a fluorescent substance (7a). Light emitting diode chip (2), recess (3a) of the first external terminal (3)
And the first wire connection part (9a), the second wire connection part (9b) of the second external terminal (4) and the thin lead wires (5, 6) are further light-transmissive sealing resin (8). Enclosed inside.

First external terminal of the light emitting diode device (1)
When a voltage is applied between the (3) and the second external terminal (4) and the light emitting diode chip (2) is energized, the light emitted from the light emitting diode chip (2) is inside the protective resin (7). After being reflected by the side wall (3c) of the recess (3a) of the first external terminal (3), it is emitted to the outside of the light emitting diode device (1) through the transparent sealing resin (8). In addition, the light emitting diode device (1) directly passes through the protective resin (7) and the sealing resin (8) without being reflected by the side wall (3c) of the recess (3a) while being emitted from the upper surface of the light emitting diode chip (2). There is also light emitted outside. A lens portion (8a) is formed at the tip of the sealing resin (8), and the light passing through the sealing resin (8) is condensed by the lens portion (8a) and the directivity is enhanced. When the light emitting diode chip (2) emits light, the light emitted from the light emitting diode chip (2) is converted into different wavelengths by the fluorescent substance (7a) mixed in the protective resin (7) and emitted. As a result, light having a wavelength different from the light emitted from the light emitting diode chip (2) is emitted from the light emitting diode device (1).

[0005]

Generally, a semiconductor light emitting device is covered with a resin encapsulant composed of an organic polymer compound in which elements such as carbon, hydrogen, oxygen and nitrogen are bonded in a mesh shape. It is known that when the resin encapsulant, which is the outer enclosure of the resin, is irradiated with these ultraviolet rays or the like, the joints of the organic polymer are cut, and various optical and chemical properties are deteriorated. . For example, a GaN (gallium nitride) -based light emitting diode chip emits ultraviolet rays up to a wavelength of about 365 nm, so the resin encapsulation (8) gradually turns yellow around the light emitting diode chip (2) with high light intensity,
A coloring phenomenon occurs. Therefore, the light emitting diode chip
The visible light emitted by (2) is absorbed and attenuated by the colored part. Furthermore, as the resin encapsulation (8) deteriorates, the moisture resistance decreases and the ion permeability increases, so that the light emitting diode chip (2) itself due to contaminant ions invading from the outside of the resin encapsulation (8). Also deteriorates, and as a result, light emitting diode devices (1)
The emission intensity of is reduced synergistically.

Further, a GaN (gallium nitride) -based light emitting diode chip having a high forward voltage has a large power loss even with a relatively low forward current, and the chip temperature rises considerably during operation. It is generally known that a resin heated to a high temperature gradually deteriorates to cause yellowing and coloring. Therefore Ga
When the N light emitting diode chip is used in the conventional light emitting diode device, the resin gradually turns yellow and colored from the portion in contact with the high temperature light emitting diode chip in combination with the irradiation of the short wavelength light from the light emitting diode chip. The appearance quality and the light emission intensity of the light emitting diode device gradually decrease. As described above, the conventional light emitting diode device causes a decrease in the kinds of materials to be selected, a decrease in reliability, an incomplete light conversion function, and an increase in product price.

As described above, since the resin encapsulant is deteriorated in a short time by ultraviolet light and the light emission efficiency is lowered, the semiconductor light emitting element is sealed by the envelope to completely shield it from the external atmosphere. A hermetic-sea structure (hermetic-sea) is prepared by filling the interior with an inert or stable sealing gas such as nitrogen.
There is a light emitting device having a ling; However, the hermetic seal structure that does not cause the deterioration of the characteristics of the resin encapsulant requires an expensive material and the manufacturing process thereof is relatively complicated, so that the final product is expensive. Further, since the inert gas having a refractive index greatly different from that of the gallium nitride-based compound semiconductor is filled in the envelope, a reflective surface is formed at the interface between the gallium nitride-based compound semiconductor and the inert gas. . Therefore, the light emitted from the semiconductor light emitting device is attenuated while repeatedly reflected at the interface between the gallium nitride-based compound semiconductor and the inert gas, resulting in a decrease in luminous efficiency.

Further, a protective resin containing a fluorescent substance (7a)
In the conventional light emitting diode device (1) in which the light emitting diode chip (2) is surrounded by (7) and further the whole is surrounded by the sealing resin (8), various problems occur in practical use. First, protective resin (7)
Also, when the encapsulating resin (8) does not necessarily have sufficient environmental resistance, the fluorescent substance (7a) that can be incorporated into the protective resin (7) is limited to a specific type. That is, generally, the resin is permeable to water, and when left in an atmosphere of high humidity, the water permeates into the resin over time. In this case, there is also a fluorescent substance having poor moisture resistance in which the light wavelength conversion function is deteriorated or disappears by being decomposed or altered by the invading water. For example, a known typical calcium sulfide-based fluorescent substance (7a) that is hydrolyzed by water cannot be used in the conventional light emitting diode device (1).

Further, not only water but also impurity ions such as sodium or chlorine pass through the resin and have a harmful effect on the light emitting diode chip (2). Therefore, even in a light emitting diode device (1) manufactured in a clean environment, when left in an atmosphere containing impurity ions, the impurity ions gradually penetrate into the resin and the electrical characteristics of the light emitting diode chip (2) deteriorate. There is a difficulty to do. In particular, a serious problem is that there are many chemically unstable organic phosphors from which harmful impurity ions are liberated. Therefore, the conventional light emitting diode device
In (1), this type of organic phosphor cannot be used.

Next, there is a problem that the coating resin is deteriorated by light having a short wavelength such as ultraviolet rays generated from the light emitting diode chip (2). As described above, carbon, hydrogen, oxygen, the protective resin (7) and the sealing resin (8) composed of an organic polymer compound in which elements such as nitrogen are bonded in a mesh form, when irradiated with ultraviolet rays, It is known that the joints of organic polymers are cut and various optical and chemical properties are deteriorated.
For example, a GaN (gallium nitride) -based blue light-emitting diode chip may have a light-emitting component in the ultraviolet wavelength range of 380 nm or less in addition to the visible light component, so the coating resin should be applied around the light-emitting diode chip with high light intensity. It gradually turns yellow and a coloring phenomenon occurs, and visible light emitted from the light emitting diode chip is absorbed and attenuated by the coloring portion. Furthermore, as the coating resin deteriorates, the moisture resistance decreases, and the ion permeability increases, so the LED chip (2) itself also deteriorates, and as a result, the emission intensity of the LED device (1) is synergistic. Reduce to.

Further, the third problem is that the selection of the material of the phosphor and the light emitting characteristics of the light emitting diode device are greatly restricted because the light emitting diode chip emitting ultraviolet rays cannot be used. UV fluorescent materials used for fluorescent lamps, mercury lamps, etc. that are excited by ultraviolet rays have been developed for a long time.
As a result of the improvements, a large number of inexpensive phosphors having various light emission wavelength distributions and having high light conversion efficiency are now in practical use. It is expected that a combination of an ultraviolet-emitting diode chip and an ultraviolet-excited phosphor will provide a light-emitting diode device with a brighter and more varied color tone. However, in the conventional light emitting diode device in which the resin is deteriorated by ultraviolet rays, the ultraviolet light emitting diode chip cannot be used, and the phosphor having excellent light conversion efficiency cannot be used.

The fourth problem is that the coating resin having low heat resistance turns yellow and is colored, so that the light emitted from the light emitting diode chip is attenuated when passing through the coating resin. As described above, for example, a blue light emitting diode chip of GaN (gallium nitride) having a high forward voltage has a large power loss even at a relatively low forward current, and the temperature of the light emitting diode chip rises considerably during operation. It is known that when heated to a high temperature, the resin gradually deteriorates, causing yellowing and coloring. Therefore, when a GaN-based light-emitting diode chip is used in a conventional light-emitting diode device, the resin gradually turns yellow and colors from the portion in contact with the high-temperature light-emitting diode chip.
The appearance quality and light emission intensity of the light emitting diode device (1) gradually decrease. As described above, in the conventional light emitting diode device, when the phosphor is mixed in the resin, the above-mentioned problems occur, so that the kinds of materials to be selected are reduced, the reliability is lowered, the light conversion function is incomplete, and the product price is increased. Cause to be invited.

An object of the present invention is to provide a semiconductor light emitting device having environmental resistance and ultraviolet resistance. Also,
An object of the present invention is to provide a semiconductor light emitting device having heat resistance.

[0014]

A semiconductor light emitting device according to the present invention comprises a substrate (3, 4, 11), a semiconductor light emitting element (2) fixed to the substrate (3, 4, 11), and a semiconductor light emitting element. The coating material (10) for covering (2) is provided, and the coating material (10) is a polymetalloxane or a ceramic formed of a metal alkoxide, a ceramic precursor polymer, or the like and having optical transparency. Unlike organic resins, even when irradiated with light having a short wavelength such as ultraviolet rays, the coating material (10), which is a polymetalloxane or ceramic having ultraviolet resistance and heat resistance, is a high temperature environment where ultraviolet rays are irradiated for a long period of time. Does not deteriorate even underneath.

In the embodiment of the present invention, the coating material
Since (10) is in the form of high-purity glass, it has extremely less impurities than low-melting glass containing boron, lead oxide, etc., and does not adversely affect the characteristics of the semiconductor light-emitting device (2). Also,
Since the coating material (10) has a glass shape with high heat resistance, the light transmittance does not deteriorate due to yellowing or the like. The coating material 10 is made of glass formed mainly of metaloxane bond or ceramic formed of ceramic precursor.

After fixing the semiconductor light emitting device (2) to the substrate (3, 4, 11) and applying the polymetalloxane sol or ceramic precursor polymer obtained by the metal alkoxide,
The coating material (10) is formed by performing drying and heat treatment. Since the coating material (10) is formed by a sol-gel method of metal alkoxide or a ceramic precursor polymer, it can be vitrified at low temperature to obtain a transparent amorphous metal oxide.

In the sol-gel method, a metal alkoxide, which is a kind of organometallic compound, is used as a starting material, and a solution thereof is hydrolyzed and polycondensed to form a sol. To give a solid metal oxide. For example, in the process of forming a silica glass film, when tetraethoxysilane (Si (OC ₂ H ₅ ) ₄ ) which is a metal alkoxide of silicon is used, tetraethoxysilane is dissolved in a solvent such as alcohol and a catalyst such as an acid is used. By adding a small amount of water and thoroughly mixing, a liquid polysiloxane sol is formed according to the following reaction formula. Hydrolysis reaction: Si (OC ₂ H ₅ ) ₄ + 4H ₂ O → Si (OH) ₄ + 4C ₂ H ₅ OH Dehydration condensation reaction: nSi (OH) ₄ → [SiO ₂ ] _n + 2nH ₂ O

In the polysiloxane sol, SiO ₂ (silica) produced by the above reaction is bound in multiple layers to form a polymer, and the fine particles are dispersed in the alcohol solution. Base on polysiloxane sol (3, 4, 11)
When applied to and dried on ethyl alcohol (C ₂ H ₅ OH) generated by the solvent and reaction, the volume of the sol shrinks as the water evaporates, and as a result, the residual OH groups at the ends of adjacent polymers are dehydrated. A condensation reaction occurs and bonds, and the coating film becomes a gel (solidified body). Further, by firing the obtained gel coating to strengthen the bond between the polysiloxane particles, a gel coating with high strength can be obtained.

The coating material (10) is a semiconductor light emitting device.
It includes a fluorescent substance (10a) which is transparent to the light emitted from (2) and absorbs the light emitted from the semiconductor light emitting device (2) and converts it into another emission wavelength. Coating material (1
(0) is formed, for example, by baking a coating material forming solution composed of a metal alkoxide such as tetramethoxysilane or tetraethoxysilane or a ceramic precursor polymer such as perhydropolysilazane, and the semiconductor light emitting device (2). And firmly adhere to the external terminals (3, 4).
The light emission of the semiconductor light emitting device (2) is converted to a desired emission wavelength by the fluorescent substance (10a) in the coating material (10), and emitted to the outside through the coating material (10) surrounding the semiconductor light emitting device (2). You can

The gallium nitride based semiconductor light emitting device (2) is
Although a semiconductor light-emitting device that emits light efficiently at a short wavelength of 365 nm to 550 nm and has high emission brightness and high reliability can be obtained, short-wavelength light particularly deteriorates the coating material (10) and the adhesive (12). Since it is easy, the effect of the present invention is great. The fluorescent substance (10a) absorbs a part of the light from the semiconductor light emitting device (2) and converts it from a short wavelength to a long wavelength with high light conversion efficiency. Substrate
(3, 4, 11) are the first external terminal (3) and the second external terminal
(4), the semiconductor light emitting device (2), the first external terminal (3)
And the electrodes (2f, 2f electrically connected to the second external terminal (4)
2g).

The coating material (10) having a light-transmitting property with respect to the light emitted from the semiconductor light emitting device (2) is composed of the semiconductor light emitting device (2), the first external terminal (3) and the second external terminal.
The end of (4) on the semiconductor light emitting device (2) side is covered. The coating material (10) is formed by solidifying a solution formed by hydrolyzing and polymerizing a metal alkoxide by a sol-gel method, a solution containing a ceramic precursor polymer, or a coating material forming solution formed of a combination thereof.

By using a coating material (10) having ultraviolet resistance and heat resistance, the coating material (10) itself and the covering body (8) covering the coating material (10) are prevented from yellowing and coloring, and a semiconductor light emitting device. It is possible to prevent the deterioration of the optical characteristics of (1) and maintain the environmental resistance by the double coating of the coating (8) and the coating material (10).

In the embodiment of the present invention, the coating material
(10) is formed by drying and baking a coating material forming solution to solidify, and the coating material (10) firmly adheres to the semiconductor light emitting element (2). A recess (3a) is formed at one end of the first external terminal (3) and the second external terminal (4), and the semiconductor light emitting element (2) is coated with the coating material (10) at the bottom of the recess (3a). It is fixed to (3b). Metal alkoxide is Si
_{(OCH 3) 4, Si (} OC 2 H 5) 4, Si (i-OC 3 H 7) 4, Si (t-OC 4 H 9) 4 such as a silicon _{tetraalkoxide, ZrSi (OCH 3) 4,} Zr (OC ₂ H
₅ ) ₄ , Zr (OC ₃ H ₇ ) ₄ , Si (OC ₄ H ₉ ) ₄ , Al (OCH ₃ ) ₃ , Al (OC
_{2 H 5) 3, Al (} iso-OC 3 H 7) 3, Al (OC 4 H 9) 3, Ti (OCH 3) 4, Ti (O
_{C 2 H 5) 4, Ti} (iso-OC 3 H 7) 4, Ti (OC 4 H 9) 4 and the like single metal alkoxide or La of _{[Al (iso-OC 3 H} 7) 4) 3, Mg [ Al (iso-OC
₃ H ₇ ) ₄ ] ₂ , Mg [Al (sec-OC ₄ H ₉ ) ₄ ] ₂ , Ni [Al (iso-OC
₃ H ₇ ) ₄ ] ₂ , Ba [Zr ₂ (C ₂ H ₅ ) ₉ ] ₂ , (OC ₃ H ₇ ) ₂ Zr [Al (OC ₃ H ₇ ) ₄ ] ₂
Selected from bimetallic alkoxides or multimetallic alkoxides. The ceramic precursor polymer is perhydropolysilazane. The coating material (10) is a semiconductor light emitting device made of metal alkoxide or ceramic precursor polymer.
It is formed by firing at a temperature lower than the melting point of (2). The coating material (10) is a transparent coating layer mainly composed of metaloxane bonds, for example, a solid glass layer. The metal alkoxide is represented by the general formula: M (OR) _n , where M is at least one metal selected from the group consisting of silicon (Si), aluminum (Al), zirconium (Zr) or titanium (Ti), R Is the same or different type of saturated or unsaturated aliphatic hydrocarbon group having 1 to 22 carbon atoms, and n is the number corresponding to the valence of the metal.

The electrodes (2f, 2g) formed on the upper surface of the semiconductor light emitting device (2) are connected to the first external terminal (3) and the second external lead wire (6) by the first thin lead wire (5) and the second thin lead wire (6). Second external terminal
(4) is electrically connected to the semiconductor light emitting device (2), the electrode (2f,
2g) and the first lead wire connected to the electrodes (2f, 2g)
The ends of (5) and the second thin lead wire (6) are coated (1
The coating material (10) is covered with (0) and firmly adheres to the ends of the first lead thin wire (5) and the second lead thin wire (6) connected to the semiconductor light emitting element (2).

Insulating substrate (11) constituting the base (3, 4, 11)
A first external terminal (3) and a second external terminal (4) having recesses (3a) formed on one main surface and extending in opposite directions along one main surface of the insulating substrate (11). Is formed, the first external terminal (3) and the second external terminal (4) at the bottom (3b) of the recess (3a)
The semiconductor light emitting element (2) is fixed to one side. The first external terminal (3) and the second external terminal (4) extend from one main surface of the insulating substrate (11) along the side surface to the other main surface.

If the coating material (10) is formed without protruding from the upper end of the concave portion (3a), the adjacent semiconductor light emitting device (20).
It is possible to prevent the generation of false lights between them. Cover (8)
Is made of resin, and the light emitted from the semiconductor light emitting device (2) passes through the coating material (10) and then is emitted to the outside of the covering body (8). The light component emitted from the semiconductor light-emitting element (2) reaches the glass layer and the wavelength-converted light in the coating material (10) has different wavelengths, and the light component from the semiconductor light-emitting element (2) that is not wavelength-converted is included. It is mixed and released through the coating (8).

A light-absorbing material that absorbs a specific emission wavelength, a light-scattering material (10b) that scatters light emitted from the semiconductor light-emitting device (2), or a binder (10b) that prevents cracks in the coating material (10) is a coating material. It is mixed in (10).

The method of manufacturing a semiconductor light emitting device according to the present invention comprises the steps of forming a recess (3a) in a substrate (3, 4, 11) and fixing a semiconductor light emitting element (2) to the bottom (3b) of the recess (3a). In addition, the step of electrically connecting the electrodes (2f, 2g) formed on the semiconductor light emitting element (2) to the first external terminal (3) and the second external terminal (4), and the semiconductor light emitting element ( 2) A coating material having a light-transmitting property with respect to the light emitted from the solution, which is obtained by hydrolyzing and polymerizing a metal alkoxide by a sol-gel method, a solution containing a ceramic precursor polymer, or a combination thereof. Injecting the forming solution into the recess (3a), the semiconductor light emitting device (2), the electrode (2f, 2g) and the first lead thin wire (5) and the second lead connected to the electrode (2f, 2g) and the second lead. The step of coating the end of the thin wire (6) and the coating material (10) for coating the semiconductor light emitting element (2) by firing the coating material forming solution. And a step of forming.

In the embodiment of the present invention, a step of injecting a solution containing a metal alkoxide into the concave portion (3a), a step of forming the base body (3, 4, 11) by the insulating substrate (11), and a coating material The step of further sealing (10) with the covering body (8) and the coating material (10) firmly bond the semiconductor light emitting element (2) and the first external terminal (3) and the second external terminal (4). The step of adhering, the step of forming the concave portion (3a) with one end of the first external terminal (3) and the second external terminal (4) as the base body (3, 4, 11) or the semiconductor light emitting element (2 The process may include the step of forming the coating material (10) by firing the coating material forming solution at a temperature lower than the melting point of (1). In addition, the step of forming the concave portion (3a) on one main surface of the insulating substrate (11) as the substrate (3, 4, 11) and the step of forming the recess (3a) on the other main surface of the insulating substrate (11) are opposite to each other. First external terminal (3) and second external terminal (4) extending in the direction
May be included. Semiconductor light emitting device (2)
The electrodes (2f, 2g) and the first external terminal (3) and the second external terminal (4) to the first thin lead wire (5) and the second thin lead wire.
You may include the process of electrically connecting by (6).

Further, in the embodiment of the present invention, the concave portion (3) is formed at one end of the first external terminal (3) and the second external terminal (4).
a), a step of fixing the semiconductor light emitting element (2) to the bottom (3b) of the recess (3a), an electrode (2f, 2g) formed on the upper surface of the semiconductor light emitting element (2) and A step of electrically connecting the one external terminal (3) and the second external terminal (4) with a thin lead wire; and having a light-transmitting property with respect to the light emitted from the semiconductor light-emitting element (2). A coating material forming solution containing a fluorescent material that absorbs light emitted from the semiconductor light emitting device (2) and converts it into another emission wavelength and is made of a metal alkoxide or a ceramic precursor polymer is injected into the recess (3a). , Semiconductor light emitting device (2), electrodes (2f, 2g) and electrodes (2f, 2g
g) including a step of covering the end of the thin lead wire, and a step of further sealing the coating material (10) with the coating body (8), the coating material (10) is a semiconductor light emitting device (2 )
And firmly adhere to the external terminals (3, 4).

In another embodiment of the present invention, the substrate (3, 4,
Insulating substrate (11) that constitutes (11) is recessed (3a) in one main surface
A step of forming a first external terminal (3) and a second external terminal (4) extending in opposite directions along one main surface of the insulating substrate (11), and a recess ( Bottom of 3a) (3b)
A step of fixing the semiconductor light emitting element (2) to one of the first external terminal (3) and the second external terminal (4) with a semiconductor light emitting element
A step of electrically connecting the electrodes (2f, 2g) formed on the upper surface of (2) and the pair of external terminals by means of thin lead wires (5, 6),
A metal alkoxide containing a fluorescent substance that is transparent to the light emitted from the semiconductor light emitting device (2) and that absorbs the light emitted from the semiconductor light emitting device (2) and converts it into another emission wavelength. Alternatively, a coating material forming solution composed of a ceramic precursor polymer is injected into the recess (3a), and the semiconductor light emitting device (2), the electrode (2f, 2g) and the lead thin wire (5 connected to the electrode (2f, 2g)). , 6) a step of coating the end portion, a step of firing the coating material forming solution to form the coating material (10), and a step of further sealing the coating material (10) with a sealing resin, The coating material (10) firmly adheres to the semiconductor light emitting element (2) and the external terminal. The coating material (10) is a semiconductor light emitting device prepared by applying a coating material forming solution.
It is formed by firing at a temperature lower than the melting point of (2).

[0032]

BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of a semiconductor light emitting device according to the present invention applied to a light emitting diode device made of a gallium nitride-based compound will be described below with reference to FIGS. In the embodiment shown in FIGS. 1 to 3, the same parts as those shown in FIG. 4 are designated by the same reference numerals.

As shown in FIG. 1, the light emitting diode device (20) according to this embodiment has a recess (a dish-shaped electrode) (3a) and a first wire connecting portion (9a) on one end side. The formed first external terminal (3), the second external terminal (4) in which the second wire connection portion (9b) is formed on one end side, and the recess (3a)
The light emitting diode chip (2) fixed to the bottom surface of the first and second lead thin wires connected between the first and second wire connecting portions (9a, 9b) and the light emitting diode chip (2). (Five,
6) and the light emitting diode chip (2) filled in the recess (3a)
Coating material (10) for coating and coating material (10)
And a covering body (8) for covering the outside of the. The first external terminal (3) and the second external terminal (4) are constituted by a known lead frame as a base body, and the recess (3a) is the first external terminal.
It is formed by crushing (3) in the length direction.

The light emitting diode chip (2) has a wavelength of 365 nm.
It is made of a gallium nitride-based compound semiconductor that emits light at a wavelength of 550 nm, and has a peak emission wavelength of about 44 in this embodiment.
A GaN-based blue light emitting diode chip of 0 nm to 470 nm is used. The gallium nitride-based semiconductor is an In _(1-X) Ga _X N (where 0 <X is formed on the insulating substrate (2) as a base made of sapphire by a well-known epitaxial growth method or the like.
It is represented by ≦ 1). In the embodiment shown in FIG. 2, the light emitting diode chip (2) is formed on the insulating substrate (2a) of sapphire by, for example, GaN by a well-known epitaxial growth method.
Buffer layer (2b) made of gallium nitride based semiconductor
Is formed. For example, an n-type semiconductor region (2c) is formed on the buffer layer (2b) by a gallium nitride based semiconductor made of GaN.
Is formed. The active layer (2d) is formed on the n-type semiconductor region (2c) by the epitaxial growth method, for example, using a gallium nitride based semiconductor made of InGaN. Active layer (2
The semiconductor substrate (2e) formed on the d) is, for example, a gallium nitride-based semiconductor having a p-type semiconductor region made of GaN. The anode electrode (2f) formed on the semiconductor substrate (2e) is electrically connected to the p-type semiconductor region exposed on the upper surface of the semiconductor substrate (2e). A semiconductor substrate having a p-type semiconductor region (2
A notch (2h) exposing the n-type semiconductor region (2c) is formed in the e) and part of the active layer (2d). The cathode electrode (2g) formed on the n-type semiconductor region (2c) is electrically connected to the n-type semiconductor region (2c).

In the light emitting diode device (20), the lower surface of the light emitting diode chip (2) has an adhesive (12) made of an adhesive resin containing an inorganic material or an adhesive (12) made of polymetalloxane or ceramic. It is fixed to the bottom surface of the recess (3a) via the. As the adhesive resin, for example, an epoxy resin or a silicone resin is suitable. The inorganic material mixed with the adhesive resin is preferably silver, aluminum, titanium oxide, silica or the like. Furthermore, if an adhesive (12) made of polymetalloxane or ceramic is used, deterioration of the adhesive resin due to irradiation with light of a short wavelength emitted from the light emitting diode chip (2)
Light absorption due to discoloration and deterioration / discoloration can be prevented. adhesive
The light emitting diode device (1) of the present embodiment capable of preventing discoloration and light absorption of (12) can improve the light emission brightness in combination with the function of the light emitting diode chip (2) as a protective resin.

The depth of the recess (3a) depends on the light emitting diode chip.
The upper surface of the light emitting diode chip (2), which is larger than the height of (2) and fixed to the bottom surface (3b) of the recess (3a), is located inside the main surface of the recess (3a). Therefore, the light emitting diode device
In (1), there is a sufficient amount of coating material inside the recess (3a).
(10) can be formed.

Anode electrode of the light emitting diode chip (2)
(2f) is the first thin wire (5) for the first external terminal (3)
Is electrically connected to the first wire connecting portion (9a) formed on the. Cathode electrode (2g) of light emitting diode chip (2)
Is electrically connected to the second wire connecting portion (9b) formed on the second external terminal (4) by the second thin lead wire (6). Therefore, the first external terminal (3) functions as an anode electrode, and the second external terminal (4) functions as a cathode electrode. The connection between the first thin lead wire (5) and the second thin lead wire (6) can be easily performed by a known wire bonding method.

The upper surface and the side surface of the light emitting diode chip (2) are covered with the coating material (10) disposed inside the recess (3a). The coating material 10 comprises a solution obtained by hydrolyzing and polymerizing a metal alkoxide by a sol-gel method, a solution containing a ceramic precursor polymer, or a coating material forming solution using a combination thereof as a starting material. These coating material forming solutions are excellent in ultraviolet resistance and heat resistance and do not substantially yellow or color even in a high temperature environment or under ultraviolet light. For this reason, the coating material (10)
Does not cause yellowing or coloring that attenuates the light emitted from the light emitting diode chip (2) even if the light having a short wavelength generated from the light emitting diode chip (2) is irradiated for a relatively long time and the temperature rises. Similar to the conventional resin encapsulant for light emitting diodes, the covering (8) is made of an epoxy resin that is not very excellent in ultraviolet resistance, but it is placed between the light emitting diode chip (2) and the covering (8). The intervening coating material (10) having excellent resistance to ultraviolet rays can also favorably prevent yellowing and coloring of the coating body (8) due to ultraviolet rays. A lens part (8a) is formed on the cover (8) to collect the light emitted from the light emitting diode chip (2) or reflected by the surface of the recess (3a).

The coating material forming solution constituting the coating material (10) is usually liquid, but when heated in air or an oxygen atmosphere, the components are decomposed or oxygen is absorbed to bond metaloxane of metal oxide. To produce a transparent coating material. If a powder of a fluorescent substance (10a) is mixed with these coating material forming solutions and applied to the periphery of the semiconductor light emitting device (2), a coating material (10) containing a fluorescent substance (10a) exhibiting a light conversion action. Can be formed.

In manufacturing the semiconductor light-emitting device shown in FIG. 1, after forming the recess (3a) at one end of the pair of external terminals (3, 4), the bottom (3b) of the recess (3a) is formed. Fix the semiconductor light emitting device (2). Next, connect the electrodes (2f, 2g) formed on the upper surface of the semiconductor light emitting element (2) and the pair of external terminals (3, 4) to a lead thin wire.
After electrically connected by (5, 6), a coating material forming solution consisting of a metal alkoxide or a ceramic precursor polymer is injected into the recess (3a), the semiconductor light emitting device (2),
Electrode (2f, 2g) and lead wire connected to electrode (2f, 2g)
Cover the ends of (5, 6). The coating material forming solution contains a fluorescent substance (10a) that absorbs light emitted from the semiconductor light emitting device (2) and converts it into another emission wavelength. afterwards,
Coating material by baking coating material forming solution (10)
And the coating material (10) is further sealed with a sealing resin (8). The coating material (10) is a semiconductor light emitting device.
Firmly adhere to (2) and external terminals (3, 4).

In the light emitting diode device (20), the light emitting diode chip (2) fixed in the recess (3a) is covered with the coating material (10) containing the fluorescent substance (10a), and further the sealing resin (8). Is covered by. At the time of manufacture, a coating material forming solution containing a fluorescent material (10a) is injected into the recess (3a) from the upper part of the light emitting diode chip (2), and the temperature is about 150 ° C to 2 ° C.
After baking at a temperature of 00 ° C to solidify and form the coating material (10) containing the fluorescent substance (10a), the entire ends of the external terminals (3, 4) are sealed with a transparent sealing resin (8). To do. The firing temperature of the coating material (10) is sufficiently lower than the melting point of the light emitting diode chip (2).

External terminals (3, 4) of the light emitting diode device (20)
When a voltage is applied between the light emitting diode chips (2) to cause the light emitting diode chips (2) to emit light, the fluorescent substance (10a) in the coating material (10) partially or wholly emits light at the emission wavelength. After being converted to another wavelength different from the above, the light is condensed by the lens portion (8a) formed at the tip of the sealing resin (8) and emitted to the outside of the light emitting diode device (20). For example, a GaN-based blue light emitting diode chip (2) having an emission peak wavelength of about 440 nm to about 470 nm is used for a semiconductor light emitting device, and C is used as an activator for the fluorescent substance (10a).
YAG added with e (cerium) (yttrium aluminum garnet, chemical formula Y ₃ Al ₅ O ₁₂ , excitation wavelength peak about 450 nm, emission wavelength peak about 540 nm yellow green light)
To use. The coating material (10) is a liquid mixture formed by mixing the powdery fine crystal grains of the YAG fluorescent substance (10a) with the coating material forming solution in an appropriate amount, and after injecting the coating material forming solution into the concave portion (3a). Obtained by firing.

On the other hand, the sealing resin (8) is a light emitting diode chip after the liquid transparent epoxy resin is injected into the mold.
(2), the fine lead wires (5, 6), and the ends of the external terminals (3, 4) to which the coating material (10) is fixed are immersed in epoxy resin and placed in a predetermined position in the epoxy resin with a positioning jig. It is obtained by fixing and heating and curing the epoxy resin. In order to widen the directional angle of the light emitted from the light emitting diode device (20) to the outside, a light scattering material such as powdered silica or a binding material (10b) may be mixed with the sealing resin (8), if necessary. . In the present embodiment, the maximum value of the wavelength conversion efficiency of the YAG fluorescent substance (10a) is relatively high, and the emission wavelength of the light emitting diode chip (2) and the excitation wavelength of the YAG fluorescent substance (10a) have a peak of about 450 nm. Since they are almost the same, a bright light emitting diode device (20) having a high effective wavelength conversion efficiency can be obtained. Further, since the crystal grains of the YAG fluorescent substance (10a) are dispersed in the coating material (10), the light emitted from the light emitting diode device (20) to the outside is wavelength-converted by the fluorescent substance (10a). In addition to the light component, the original light emitting component that does not pass through the crystal grains of the fluorescent substance (10a) and is not wavelength-converted, that is, the light component emitted from the light emitting diode chip (2) is also included.

Therefore, the emission wavelength peak is about 440 nm to about 4
70nm blue light emitting diode chip (2) light emitting component and YAG fluorescent material which has a wide wavelength distribution with a half-value width of about 130nm and is an emission wavelength peak of about 540nm yellow green light.
White light mixed with the light emitting component of (10a) is emitted from the light emitting diode device (20) to the outside. In this case, the color tone of the emission color of the light emitting diode device (20) is adjusted by adjusting the amount of YAG fluorescent substance (10a) powder mixed in the coating material forming solution and changing the distribution concentration in the coating material (10). can do. Further, when the YAG fluorescent substance (10a) is manufactured, if an appropriate additive is added in an appropriate amount to partially change the crystal structure and shift the emission wavelength distribution, the emission color of the light emitting diode device (20) is adjusted to a different color tone. can do. For example, Ga (gallium) or Lu (lutetium) can be added to shift to the short wavelength side, and Gd (gadolinium) can be added to shift to the long wavelength side.

In the above embodiment, the coating material is used.
Although the structure in which the fluorescent substance (10a) is mixed in (10) is adopted, the structure in which the fluorescent substance is not included in the coating material (10) may be adopted. In this case, the light emitted from the light emitting diode chip (2) can be emitted to the outside of the cover (8) without wavelength conversion. Also in this case, the light from the light emitting diode chip (2) can be emitted to the outside without being attenuated.

In the present invention, various improvements can be made to further improve the optical characteristics and workability. For example, by mixing a light scattering material in the coating material (10) to scatter the light of the light emitting diode chip (2), the light amount of the light emitting diode chip (2) hitting the fluorescent substance (10a) is increased, and the wavelength conversion efficiency is improved. In addition to being improved, the directivity angle of the light emitted from the light emitting diode device (20) to the outside can be widened. Coating material
A binder that prevents the crack of (10) can be blended. It is possible to increase the viscosity of the coating material forming solution and reduce the amount of the coating material forming solution used. In such a case, as shown in FIG. 3, a suitable amount of the fluorescent substance (10a) powder and ceramic powder (10b) of silica, titanium oxide or the like may be mixed with the powder of the fluorescent substance (10a) according to the purpose.

The formed coating material (10) has not only a light converting function but also the following excellent characteristics.

[1] Covered with coating material (10)
The yellowing and coloring of (8) can be prevented. [2] Using relatively inexpensive materials, it becomes possible to perform resin encapsulation by the potting method or transfer molding method.
A reduction in manufacturing cost can be realized. [3] Compared to a light emitting device with a hermetically sealed structure,
An inexpensive short wavelength semiconductor light emitting device can be realized. [4] It is possible to realize a semiconductor light emitting device having a short wavelength that is sufficiently suitable for practical use. [5] The light attenuation by the coating material (10) is relatively small. [6] Light emitting diode chip (2) and coating material (10)
Since the difference in the refractive index between and is relatively small, compared to the case where the hermetically sealed structure is adopted, the light emitting diode chip (2)
The reflection at the interface of can be reduced. [7] The extraction efficiency of light emitted from the light emitting diode chip (2) can be improved. [8] It has excellent moisture resistance, does not allow moisture to penetrate inside, and does not deteriorate the semiconductor light emitting device (2) and the fluorescent substance (10a). [9] Since the ion barrier effect for preventing permeation of harmful ions is high, the semiconductor light emitting element (2) is not deteriorated by harmful ions from the outside of the semiconductor light emitting device or the fluorescent substance (10a). [10] Since the light emitting diode chip (2) is doubly covered with the coating material (10) and the covering body (8), the environment resistance of the light emitting diode device (20) is improved. [11] Excellent in UV resistance and heat resistance, does not cause yellowing or coloring even in a high temperature environment or under UV light emission, and does not attenuate the light emission of the semiconductor light emitting device (2). [12] Since the metal atom in the coating material (10) is strongly bonded to the oxygen atom in the surface oxide layer of the metal or ceramic, the semiconductor light emitting device (2), the external terminal (3, 4) or the oxide-based inorganic material. Good adhesion to the fluorescent substance (10a).

As described above, by using the coating material (10), various weak points of the conventional semiconductor light emitting device can be overcome, and the semiconductor light emission having the wavelength conversion function by the fluorescent material (10a) is inexpensive and highly reliable. The device can be obtained.

Further, the coating material forming solution containing the metal alkoxide or the ceramic precursor polymer is
It can be injected into (3a) and baked at a temperature around 150 ° C., which is lower than the melting point of the light emitting diode chip (2), and the coating material (10) can be formed in a low temperature region. Therefore, the coating material (10) is supplied by dropping the liquid coating material forming solution into the recessed portion (3a) of the light emitting diode chip (2), and then subjecting the coating material to heat treatment such as firing. ) Can be easily formed. The firing temperature of the coating material (10) is sufficiently lower than the melting point of the light emitting diode chip (2).

The coating material (1
0) covers the periphery of the light emitting diode chip (2) and the connection portion of the first lead thin wire (5) and the second lead thin wire (6) with the light emitting diode chip (2). At this time, since the upper surface of the light emitting diode chip (2) is arranged inside the main surface of the recess (3a), the light emitting diode chip (2) can be sealed with the coating material (10) having a sufficient thickness. it can. Since the metal atom in the coating material (10) is firmly bonded to the oxygen atom of the surface oxide layer of the metal or ceramic, the coating material (10) is the light emitting diode chip (2) and the first external terminal (3).
And good adhesion to the second external terminal (4).

The cover (8) is a light-transmitting resin encapsulant made of epoxy resin or the like, and can be easily formed by a well-known potting method, transfer molding method or the like. The coating (8) is made of epoxy resin or the like that may be yellowed or colored by the ultraviolet rays generated from the light emitting diode chip (2), but the interface with the light emitting diode chip (2) is yellowed by the ultraviolet rays. Since the coating material (10), which is less likely to cause coloring, is present,
Substantially no yellowing or coloring of (8) occurs. Therefore, the ultraviolet light emitted through the coating material (10) can be led to the outside of the covering body (8) without being significantly attenuated through the covering body (8).

FIG. 3 shows a second embodiment of the present invention applied to a chip type light emitting diode device (20) using an insulating substrate. Chip type light emitting diode device (20)
An insulating substrate (11) serving as a base body having a concave portion (3a) formed on one main surface, and a first external terminal (3) and a second external terminal (3) formed on the insulating substrate (11) away from each other. An external terminal (4), a light emitting diode chip (2) fixed to the recess (3a) of the first external terminal (3) via an adhesive (12), and a light emitting diode chip (2)
First lead wire (5) for electrically connecting the anode electrode (2f) of the device and the first external terminal (3), the cathode electrode (2g) of the light emitting diode chip (2) and the second external terminal (4) a second thin lead wire (6) for electrically connecting with the light emitting diode chip (2) filled in the recess (3a), the anode electrode (2f),
Cathode electrode (2g) and anode electrode (2f), cathode electrode
The coating material (10) that covers the ends of the thin lead wires (5, 6) connected to (2g) and the outer surface of the coating material (10) that is formed on one main surface of the insulating substrate (11). And a cover (8) having a trapezoidal cross section. One ends of the first external terminal (3) and the second external terminal (4) are arranged in the recess (3a). The LED chip (2) is the bottom of the recess (3a)
At (3b), it is fixed to the first external terminal (3) via the adhesive (12). The other ends of the first external terminal (3) and the second external terminal (4) are arranged to extend to the side surface and the other main surface of the insulating substrate (11). The coating material (10) does not protrude from the upper end (3d) of the recess (3a). The coating material (10) is further sealed with a sealing resin (8), and the light emitted from the semiconductor light emitting element (2) passes through the coating material (10) and then outside the sealing resin (8). Is released to.

The light emitted from the semiconductor light emitting device (2) reaches the coating material (10), and a part of it reaches the coating material (1).
The wavelength is converted to a different wavelength in (0) and mixed with the light component from the semiconductor light emitting element (2) which is not wavelength-converted and the sealing resin (8)
Is released to the outside through. A coating material (10) with a light-absorbing substance that absorbs a specific emission wavelength, a light-scattering substance (10b) that scatters light emitted from the semiconductor light-emitting device (2), or a binding material (10b) that prevents cracks in the coating material (10). You may mix in. In the light emitting diode device (1) of FIG. 3 as well, the coating material (10) having excellent ultraviolet resistance characteristics interposed between the light emitting diode chip (2) and the coating body (8) prevents the coating body (8) from being exposed to ultraviolet rays. Yellowing / coloring is also well prevented.

In the case of manufacturing a semiconductor light emitting device having an insulating substrate (11), a recess (3) is formed on one main surface of the insulating substrate (11).
After forming a), a pair of external terminals (3, 4) extending in opposite directions along one main surface of the insulating substrate (11) is formed, and then the bottom portion (3b) of the recess (3a). At a pair of external terminals
The semiconductor light emitting element (2) is fixed to one of (3, 4). For example, a GaN-based light-emitting diode chip (2) that emits ultraviolet rays having an emission peak wavelength of about 365 nm to 400 nm and Ga of an excitation peak wavelength of about 360 nm and an emission peak wavelength of about 543 nm.
And a fluorescent substance (10a) of Y ₂ SiO ₅ activated by Tb (terbium), a green light emitting diode device (20) having a very sharp emission distribution with a half value width of about 12 nm can be obtained.

The above combination of the light emitting diode chip and the fluorescent material (10a) is merely an example, and any fluorescent substance can be used as long as it has an excitation wavelength distribution suitable for the emission wavelength of the ultraviolet light emitting diode chip (2) and has a high wavelength conversion efficiency. Can also be used with substance (10a). For example, from a fluorescent substance (10a) such as a calcium halophosphate-based, calcium phosphate-based, silicate-based, aluminate-based, or tungstate-based fluorescent material (10a),
a) can be selected.

[0057]

As described above, according to the present invention, since the semiconductor light emitting element is covered with the coating material made of the glass material having excellent ultraviolet resistance and heat resistance, deterioration of the coating material is suppressed and permeation of harmful substances is prevented. A semiconductor light emitting device having high reliability and good light extraction efficiency can be obtained. Also,
When a fluorescent substance is mixed in the coating material, the function of converting the emission wavelength by the fluorescent substance can be excellently obtained, and a highly reliable and inexpensive semiconductor light emitting device can be obtained.

[Brief description of drawings]

FIG. 1 is a sectional view of a semiconductor light emitting device according to the present invention applied to a light emitting diode device.

FIG. 2 is a sectional view of a semiconductor light emitting device.

FIG. 3 is a sectional view showing an embodiment of the present invention applied to a chip type light emitting diode device.

FIG. 4 is a sectional view of a conventional light emitting diode device.

[Explanation of symbols]

(2) ... Semiconductor light-emitting element (light-emitting diode chip),
(2a) ・ ・ Insulating substrate, (2b) ・ ・ Buffer layer, (2c) ・ ・
n-type semiconductor region, (2d) .. active layer, (2e) .. semiconductor substrate, (2f, 2g) .. electrode, (3) .. first external terminal,
(3a) ・ ・ Concave, (3b) ・ ・ Bottom, (3c) ・ ・ Sidewall,
(3d) ・ ・ Upper end, (4) ・ ・ Second external terminal, (5) ・ ・
1st thin lead wire, (6) ・ ・ 2nd thin lead wire, (8)
..Coating body (sealing resin), (9a) .. First wire connection part, (9b) .. Second wire connection part, (10) .. Coating material, (11) .. Insulating substrate , (20) .. Light emitting diode device (light emitting semiconductor device),

Claims (26)

[Claims] 1. A semiconductor light emitting device comprising a base, a semiconductor light emitting element fixed to the base, and a coating material for coating the semiconductor light emitting element, wherein the coating material is a polymetalloxane having a light-transmitting property. Alternatively, a semiconductor light emitting device characterized by being ceramic. 2. The semiconductor light emitting device according to claim 1, wherein the coating material is glass formed mainly of a metaloxane bond. 3. The semiconductor light emitting device according to claim 1, wherein the coating material is a gel-like coating member formed mainly of a metaloxane bond. 4. The coating material comprises polymetalloxane formed from a metal alkoxide.
4. The semiconductor light emitting device according to any one of 3 above. 5. The semiconductor light emitting device according to claim 1, wherein the coating material comprises polymetalloxane formed by subjecting a metal alkoxide to a sol-gel method. 6. The coating material according to claim 1, comprising a metal alkoxide or a polymetalloxane formed by hydrolyzing and polymerizing a solution containing the metal alkoxide by a sol-gel method. Semiconductor light emitting device. 7. The metal alkoxide is one kind or two or more kinds selected from a single metal alkoxide, a double metal alkoxide and a multimetal alkoxide.
The semiconductor light-emitting device according to. 8. The semiconductor light emitting device according to claim 1, wherein the coating material is made of a ceramic formed from a ceramic precursor. 9. The semiconductor light emitting device according to claim 8, wherein the ceramic precursor is polysilazane. 10. The semiconductor light emitting device according to claim 1, wherein the coating material is made of ceramic formed by heat-treating a ceramic precursor. 11. The semiconductor light emitting device according to claim 1, wherein the coating material covers at least an upper surface of the semiconductor light emitting element. 12. The semiconductor light emitting device according to claim 11, wherein the coating material covers the entire surface of the semiconductor light emitting element except the lower surface thereof. 13. The semiconductor light emitting device according to claim 1, wherein the base has a recess filled with the coating material. 14. The base body is an insulating substrate.
The semiconductor light-emitting device according to. 15. The semiconductor light emitting device according to claim 1, wherein the base is a lead frame. 16. The semiconductor light emitting device has a wavelength of 365 nm to 5 nm.
16. A light emitting device having a light wavelength of 50 nm.
The semiconductor light-emitting device according to item. 17. The semiconductor light emitting device according to claim 16, wherein the semiconductor light emitting element is a gallium nitride-based compound semiconductor light emitting element. 18. The semiconductor light emitting device according to claim 1, wherein the coating material includes a fluorescent material that receives at least a part of light emitted from the semiconductor light emitting device and performs wavelength conversion. apparatus. 19. The semiconductor light emitting device according to claim 18, wherein the fluorescent material absorbs at least a part of light emitted from the semiconductor light emitting element and emits light having a wavelength longer than this. 20. The light emitted from the semiconductor light emitting device and the light wavelength-converted by the fluorescent material are mixed and emitted to the outside of the coating material.
Alternatively, the semiconductor light emitting device according to item 19. 21. The semiconductor light emitting device according to claim 1, wherein the coating material is covered with a cover. 22. The semiconductor light emitting device according to claim 21, wherein the cover is formed of a resin mixed with a light scattering material or a binder. 23. The semiconductor light emitting device according to claim 22, wherein the light emitted from the semiconductor light emitting element passes through the coating material and is emitted to the outside of the covering body. 24. The semiconductor light emitting device according to claim 21, wherein the cover is fitted in the recess, and the coating material is formed between a bottom surface of the recess and the cover. . 25. A recess is formed on one main surface of an insulative substrate that constitutes the base, the semiconductor light emitting element is fixed to the bottom surface of the recess, and the pair of electrodes of the semiconductor light emitting element has the insulating property. The semiconductor light emitting device according to claim 1, which is electrically connected to a pair of external terminals formed on one main surface of the substrate. 26. The lead frame forming the base has a pair of external terminals, one of the external terminals is provided with a concave portion, and the semiconductor light emitting element is fixed to the bottom surface of the concave portion. The semiconductor light emitting device according to claim 1, wherein the pair of electrodes of the element are electrically connected to the pair of external terminals.