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TWI599078B - Wafer-level package light-emitting device with moisture barrier structure - Google Patents

Wafer-level package light-emitting device with moisture barrier structure Download PDF

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Publication number
TWI599078B
TWI599078B TW105124965A TW105124965A TWI599078B TW I599078 B TWI599078 B TW I599078B TW 105124965 A TW105124965 A TW 105124965A TW 105124965 A TW105124965 A TW 105124965A TW I599078 B TWI599078 B TW I599078B
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photoluminescent
moisture
layer
light
polymer material
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TW105124965A
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TW201806189A (en
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陳傑
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行家光電股份有限公司
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Priority to TW105124965A priority Critical patent/TWI599078B/en
Priority to EP17183965.7A priority patent/EP3279952A1/en
Priority to US15/665,280 priority patent/US10230027B2/en
Priority to KR1020170097665A priority patent/KR101942042B1/en
Priority to JP2017151954A priority patent/JP6817167B2/en
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Publication of TWI599078B publication Critical patent/TWI599078B/en
Publication of TW201806189A publication Critical patent/TW201806189A/en
Priority to JP2020174343A priority patent/JP7100383B2/en

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/852Encapsulations
    • H10H20/854Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/83Electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8511Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512Wavelength conversion materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • H10H20/856Reflecting means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/857Interconnections, e.g. lead-frames, bond wires or solder balls

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  • Led Device Packages (AREA)
  • Optical Filters (AREA)

Description

具濕氣阻隔結構之晶片級封裝發光裝置 Wafer-level package light-emitting device with moisture barrier structure

本發明有關一種發光裝置,特別關於一種具有濕氣阻隔結構且應用LED晶片之發光裝置。 The present invention relates to a light-emitting device, and more particularly to a light-emitting device having a moisture barrier structure and applying an LED chip.

LED(發光二極體)晶片係普遍地使用來提供照明、顯示或指示用的光源,而LED晶片通常會設置於一封裝結構中,以成為一發光裝置,其中封裝結構可包含一光致發光材料(螢光材料或光轉換材料),以將LED晶片所發出的光線(例如藍光)部分轉換成其他波長(例如黃光),而不同波長的光線再混合形成白光。依應用場合的不同,所需選用的光致發光材料之頻譜(spectrum)特性亦有所不同。 LED (Light Emitting Diode) wafers are commonly used to provide illumination, display or indication light sources, and LED chips are typically disposed in a package structure to form a light emitting device, wherein the package structure can include a photoluminescence A material (fluorescent material or light conversion material) to partially convert light (eg, blue light) emitted by the LED wafer to other wavelengths (eg, yellow light), and light of different wavelengths is mixed to form white light. The spectrum characteristics of the photoluminescent materials to be used vary depending on the application.

舉例而言,目前的液晶顯示器中多以LED發光裝置作為背光光源,而在此應用中,光致發光材料若具有較窄的半高寬(FWHM)發光頻譜時,可提高顯示器色彩純度(color purity),可使其具有較廣的色域(color gamut),以提供消費者更鮮豔的色彩體驗。另一方面,在照明應用上,若LED發光裝置採用具有較窄發光頻譜的光致發光材料(例如發出紅光),則可有效提升光線的演色性(CRI)並且避免犧牲過多的光轉換效率,使具高 演色性之發光裝置在整體上仍具有良好的發光效率。 For example, in current liquid crystal displays, LED light-emitting devices are mostly used as backlight sources, and in this application, if the photo-luminescence material has a narrow half-height width (FWHM) light-emitting spectrum, the color purity of the display can be improved (color Purity), which allows it to have a wider color gamut to provide consumers with a more vivid color experience. On the other hand, in lighting applications, if the LED lighting device uses a photoluminescent material with a narrower emission spectrum (for example, emitting red light), it can effectively improve the color rendering (CRI) of the light and avoid sacrificing excessive light conversion efficiency. Make it high The color-developing illuminating device still has good luminous efficiency as a whole.

在現有的光致發光材料中,係有幾種能提供較窄之半高寬頻譜,例如氟化物螢光材料或量子點(quantum dot)光轉換材料,吸引了LED產業廣大的注意力。然而,這些光轉換材料卻對濕氣相當的敏感。例如氟化物螢光材料包含易被氧化之活性元素(例如錳),其接觸到空氣中的濕氣時,易被氧化而形成氧化物;這些氧化物導致活性元素喪失光轉換的功能,因而無法提供預期亮度(或是預期波長)的光線。換言之,這些螢光材料易因濕氣而導致效能衰減,不符所需。於是,業界亦提出了方案以求減少這些螢光材料所受到濕氣的影響。 Among the existing photoluminescent materials, there are several kinds of spectrums which can provide a narrow half-height width spectrum, such as a fluoride fluorescent material or a quantum dot light-converting material, which attracts the attention of the LED industry. However, these light converting materials are quite sensitive to moisture. For example, a fluoride fluorescent material contains an active element (for example, manganese) which is easily oxidized, and when it is exposed to moisture in the air, it is easily oxidized to form an oxide; these oxides cause the active element to lose the function of light conversion, and thus cannot Provides light of the expected brightness (or expected wavelength). In other words, these fluorescent materials are prone to deteriorating performance due to moisture. Therefore, the industry has also proposed a solution to reduce the impact of moisture on these fluorescent materials.

舉例而言,在一美國專利案(專利號US 8,057,706 B1)的方案中,可於氟化物螢光材料的表面形成一保護層,該保護層為一不含錳之螢光材料,因此降低水氣滲透導致活性元素的氧化;而在另一美國專利案(專利號US 9,120,972 B2)的方案中,亦在氟化物螢光材料的表面形成一保護層,該保護層為一含較低濃度的錳之螢光材料。由於降低了錳元素被氧化的機會,因此這兩方案都可減少氟化物螢光材料因濕氣而造成的效能衰減。然而,上述方法僅降低了螢光材料由濕氣所造成的效能衰減,仍無法完全避免此衰減,同時,要使每一個氟化物螢光材料顆粒都被完整地包覆一不含錳(或低濃度錳)的保護層甚為不易,且會增加生產成本,再者,保護層的存在亦會降低氟化物螢光材料的光轉換效率。 For example, in the solution of the U.S. Patent No. (U.S. Patent No. 8,057,706 B1), a protective layer can be formed on the surface of the fluoride fluorescent material, which is a manganese-free fluorescent material, thereby reducing water. Gas permeation leads to oxidation of the active element; in a solution of another US patent (Patent No. US 9,120,972 B2), a protective layer is also formed on the surface of the fluoride fluorescent material, the protective layer being a lower concentration Fluorescent material of manganese. Both of these solutions reduce the degradation of the phosphorescent material due to moisture due to the reduced chance of oxidation of the manganese element. However, the above method only reduces the performance degradation caused by moisture of the fluorescent material, and the attenuation cannot be completely avoided. At the same time, each of the fluoride fluorescent material particles is completely coated with a manganese-free (or The protective layer of low concentration manganese is very difficult and will increase the production cost. Furthermore, the presence of the protective layer will also reduce the light conversion efficiency of the fluoride fluorescent material.

在LED發光裝置的封裝結構上,亦有方案被提出來以改善濕氣對螢光材料的影響而提升發光裝置的操作穩定性。例如在一美國專利申請案(專利號US 2015/0270451)的方案中,揭露一支架型(PLCC-type)之 發光裝置,其LED晶片之下方與四周皆被支架結構所遮蔽,其正面的出光面卻容易遭受水氣滲透,因此該申請案增設了一透光矽膠(silicone)覆蓋層(overlayer)於該支架型發光裝置之正面,可減少濕氣從外界穿透至內部的螢光材料層;在另一美國專利申請案(專利號US 2015/0270452)的方案中,亦揭露一支架型之發光裝置,螢光材料與矽膠相混合成一混合物(blend),該混合物設置於支架結構所形成之凹槽中,而在混合物中,矽膠相對於螢光材料佔有較大的重量百分比,藉由較多的矽膠可增加阻隔濕氣的能力,以減少螢光材料受到濕氣影響。 In the package structure of the LED lighting device, there are also proposals to improve the operational stability of the light-emitting device by improving the influence of moisture on the fluorescent material. For example, in a solution of the U.S. Patent Application (Patent No. US 2015/0270451), a stent type (PLCC-type) is disclosed. In the illuminating device, the underside and the periphery of the LED chip are covered by the bracket structure, and the illuminating surface of the front surface is easily subjected to moisture penetration. Therefore, the application adds a silicone overlayer to the bracket. The front side of the illuminating device can reduce the layer of fluorescent material that penetrates from the outside to the inside of the illuminating device; in the solution of another US patent application (Patent No. US 2015/0270452), a bracket type illuminating device is also disclosed. The phosphor material is mixed with the silicone rubber to form a blend, and the mixture is disposed in the groove formed by the stent structure, and in the mixture, the silicone rubber accounts for a larger weight percentage relative to the fluorescent material, and more silicone rubber is used. It can increase the ability to block moisture to reduce the impact of fluorescent materials on moisture.

上述從封裝結構上阻隔濕氣之解決方案皆針對支架型發光裝置,然而,採用支架會增加LED晶片之封裝尺寸,且採用更厚的矽膠覆蓋層或更多的矽膠用量以改善濕氣阻隔效果更會進一步增加了發光裝置之整體尺寸,這樣的方案不利LED應用於輕薄短小之電子產品,例如行動裝置或電視之LED背光光源。為符合此類應用需求,LED發光裝置必須具有小尺寸,而在不斷推陳出新的小尺寸發光裝置中,以晶片級封裝(chip-scale package,CSP)發光裝置最具優勢,亦最受矚目,然而,縮小LED封裝尺寸使對外界濕氣的阻擋更形困難,至今現有LED技術仍無良好的濕氣阻隔方案可應用於CSP發光裝置。 The above solution for blocking moisture from the package structure is directed to the bracket type illuminating device. However, the use of the bracket increases the package size of the LED chip, and a thicker enamel cover layer or more enamel content is used to improve the moisture barrier effect. The overall size of the illuminating device is further increased. Such a solution is disadvantageous for the LED to be applied to light and thin electronic products such as LED backlight sources for mobile devices or televisions. In order to meet the needs of such applications, LED light-emitting devices must have a small size, and in the continuous development of small-sized light-emitting devices, chip-scale package (CSP) light-emitting devices have the most advantages, and are also attracting the most attention. The reduction of the size of the LED package makes the blocking of external moisture more difficult. So far, the existing LED technology still has no good moisture barrier scheme applicable to the CSP illumination device.

因此,如何使CSP LED發光裝置在採用濕氣敏感之光致發光材料以提升各種性能時,亦具有良好的濕氣阻隔能力,且仍能不增加CSP LED封裝尺寸,正是目前LED業界亟待解決的問題。 Therefore, how to make the CSP LED illuminating device have good moisture barrier ability when using moisture sensitive photoluminescent materials to improve various performances, and still can not increase the CSP LED package size, which is the current LED industry to be solved urgently. The problem.

本發明之一目的在於提出一種發光裝置,其具有各種濕氣阻隔機制,以減少或避免外界空氣中之濕氣影響到發光裝置內的濕氣敏感之光致發光材料。此外,該濕氣阻隔機制不會造成發光裝置之封裝尺寸大幅增加,故發光裝置仍可實現成晶片級封裝者。 It is an object of the present invention to provide a light-emitting device having various moisture barrier mechanisms to reduce or prevent moisture in the outside air from affecting the moisture-sensitive photoluminescent material within the light-emitting device. In addition, the moisture barrier mechanism does not cause a substantial increase in the package size of the light-emitting device, so the light-emitting device can still be realized as a wafer-level package.

為達上述目的,根據本發明所提出的發光裝置之一實施例,該發光裝置可包含:一藍光LED晶片;一光致發光結構,設置於該藍光LED晶片上、且包括一第一光致發光層及一第二光致發光層,該第一光致發光層設置於該第二光致發光層上,該第一光致發光層包含一第一高分子材料及混合於該第一高分子材料中之一非濕氣敏感之光致發光材料,而該第二光致發光層包含一第二高分子材料及混合於該第二高分子材料中之一濕氣敏感之光致發光材料;以及一反射結構,圍繞該藍光LED晶片及該光致發光結構,該反射結構包含一第三高分子材料及混合於該第三高分材料中之一非濕氣敏感之光學散射性微粒。 In an embodiment of the present invention, the light emitting device may include: a blue LED chip; a photoluminescent structure disposed on the blue LED chip and including a first light a light emitting layer and a second photoluminescent layer, wherein the first photoluminescent layer is disposed on the second photoluminescent layer, the first photoluminescent layer comprises a first polymer material and is mixed with the first high One of the molecular materials is a non-moisture sensitive photoluminescent material, and the second photoluminescent layer comprises a second polymeric material and a moisture sensitive photoluminescent material mixed in the second polymeric material And a reflective structure surrounding the blue LED chip and the photoluminescent structure, the reflective structure comprising a third polymer material and one of the third high-division material non-moisture-sensitive optical scattering particles.

為達上述目的,根據本發明所提出的發光裝置之另一實施例,該發光裝置可包含:一藍光LED晶片;一光致發光結構,設置於該藍光LED晶片上、且包括一第一光致發光層及一第二光致發光層,該第一光致發光層包覆於該第二光致發光層上;以及一透明封裝結構,設置於該光致發光結構上;其中,該第一光致發光層包含一第一高分子材料及混合於該第一高分子材料中之一非濕氣敏感之光致發光材料,而該第二光致發光層包含一第二高分子材料及混合於該第二高分子材料中之一濕氣敏感之光致發光材料,且該透明封裝結構包含一透明高分子材料。 In accordance with another embodiment of the present invention, the light emitting device can include: a blue LED chip; a photoluminescent structure disposed on the blue LED chip and including a first light a photoluminescent layer and a second photoluminescent layer, the first photoluminescent layer is coated on the second photoluminescent layer; and a transparent encapsulating structure disposed on the photoluminescent structure; wherein the A photoluminescent layer comprises a first polymer material and a non-moisture sensitive photoluminescent material mixed in the first polymer material, and the second photoluminescent layer comprises a second polymer material and A moisture sensitive photoluminescent material is mixed in the second polymer material, and the transparent package structure comprises a transparent polymer material.

為達上述目的,根據本發明所提出的又一實施例,其包含具 濕氣阻隔之分層光致發光結構,並應用於需使用濕氣敏感光致發光材料之支架型LED發光裝置,該發光裝置包含:一藍光LED晶片;一封裝結構,包含一導線架及一反射體,該反射體係部分地包覆該導線架、且包含一凹槽,該藍光LED晶片設置於該凹槽內、並電性連接至該導線架之第一電極及第二電極;以及一光致發光結構,設置於該藍光LED晶片之上方以及該凹槽內、且包括一第一光致發光層及一第二光致發光層,該第一光致發光層設置於該第二光致發光層上,該第一光致發光層包含一第一高分子材料及混合於該第一高分子材料中之一非濕氣敏感之光致發光材料,而該第二光致發光層包含一第二高分子材料及混合於該第二高分子材料中之一濕氣敏感之光致發光材料。 In order to achieve the above object, according to still another embodiment of the present invention, a moisture-shielding layered photoluminescence structure applied to a stent type LED light-emitting device using a moisture-sensitive photoluminescence material, the light-emitting device comprising: a blue LED chip; a package structure comprising a lead frame and a lead frame a reflective body partially covering the lead frame and including a recess, the blue LED chip being disposed in the recess and electrically connected to the first electrode and the second electrode of the lead frame; a photoluminescent structure disposed above the blue LED chip and in the recess, and including a first photoluminescent layer and a second photoluminescent layer, the first photoluminescent layer being disposed on the second light The first photoluminescent layer comprises a first polymer material and a non-moisture sensitive photoluminescent material mixed in the first polymer material, and the second photoluminescent layer comprises a second polymer material and a moisture sensitive photoluminescent material mixed in the second polymer material.

藉此,本發明所提出的發光裝置至少可提供以下有益技術效果:第一光致發光層可阻隔濕氣通過,以使濕氣不易穿透至第二光致發光層的濕氣敏感之光致發光材料;反射結構、透明封裝結構或封裝結構亦可阻隔濕氣通過,減少濕氣對於濕氣敏感之光致發光材料的影響。如此,以具有濕氣阻隔特性之結構將濕氣敏感之光致發光材料遮蔽於其中,可減少光致發光材料受環境濕氣影響而造成效能衰減。 Therefore, the light-emitting device proposed by the present invention can provide at least the following beneficial technical effects: the first photoluminescent layer can block the passage of moisture, so that the moisture does not easily penetrate the moisture-sensitive light of the second photoluminescent layer. The luminescent material; the reflective structure, the transparent package structure or the package structure can also block the passage of moisture, and reduce the influence of moisture on the moisture-sensitive photoluminescent material. In this way, the moisture-sensitive photoluminescent material is shielded by the structure having the moisture barrier property, and the photoluminescent material can be reduced in the performance degradation caused by the environmental moisture.

此外,第一光致發光層中,除了第一高分子材料能阻礙濕氣通過,非濕氣敏感之光致發光材料除了可提供原有光轉換之功能,亦可進一步阻礙外界環境濕氣之穿透,故第一高分子材料不需較大的厚度即可使第一光致發光層整體上有良好的阻隔濕氣能力,達到保護內層濕氣敏感光致發光材料之目的。如此,發光裝置在具有濕氣阻隔的機制下,其整體尺寸仍可滿足封裝尺寸極小化之要求。 In addition, in the first photoluminescent layer, in addition to the first polymer material can hinder the passage of moisture, the non-moisture-sensitive photoluminescent material can further hinder the external environment moisture in addition to providing the function of the original light conversion. Penetration, so the first polymer material does not need a large thickness to make the first photoluminescent layer have a good ability to block moisture as a whole, and achieve the purpose of protecting the inner layer moisture sensitive photoluminescent material. In this way, under the mechanism of moisture blocking, the overall size of the illuminating device can still meet the requirements of miniaturization of the package size.

另一方面,發光裝置可以進一步包含吸濕層、吸溼材料及/或濕氣阻隔結構,以具有更佳的濕氣阻隔或濕氣去除能力,使得濕氣更難從外界環境滲透至濕氣敏感之光致發光材料。 In another aspect, the light emitting device may further comprise a moisture absorbing layer, a moisture absorbing material and/or a moisture blocking structure to have better moisture barrier or moisture removal capability, so that moisture is more difficult to penetrate from the external environment to moisture. Sensitive photoluminescent material.

為讓上述目的、技術特徵及優點能更明顯易懂,下文係以較佳之實施例配合所附圖式進行詳細說明。 The above objects, technical features and advantages will be more apparent from the following description.

1、2、3、4、5‧‧‧發光裝置 1, 2, 3, 4, 5‧‧‧ illuminating devices

10、10’‧‧‧藍光LED晶片、LED晶片 10, 10'‧‧‧Blue LED chip, LED chip

11‧‧‧上表面 11‧‧‧ upper surface

12‧‧‧下表面 12‧‧‧ Lower surface

13‧‧‧立面 13‧‧‧Facade

14‧‧‧電極組 14‧‧‧Electrode group

20、20’‧‧‧光致發光結構、PL結構 20, 20'‧‧‧Photoluminescent structure, PL structure

201’‧‧‧頂部 201’‧‧‧ top

202’‧‧‧立部 202’‧‧‧

203’‧‧‧側部 203’‧‧‧ side

201‧‧‧頂面 201‧‧‧ top surface

202‧‧‧底面 202‧‧‧ bottom

203‧‧‧側面 203‧‧‧ side

21‧‧‧第一光致發光層、第一PL層 21‧‧‧First photoluminescent layer, first PL layer

211‧‧‧第一高分子材料 211‧‧‧First polymer material

212‧‧‧非濕氣敏感之光致發光材料、非濕敏材料 212‧‧‧ Non-moisture sensitive photoluminescent materials, non-moisture sensitive materials

22‧‧‧第二光致發光層、第二PL層 22‧‧‧Second photoluminescent layer, second PL layer

221‧‧‧第二高分子材料 221‧‧‧Second polymer material

222‧‧‧濕氣敏感之光致發光材料、濕敏材料 222‧‧‧ Moisture sensitive photoluminescent materials, moisture sensitive materials

23‧‧‧第三光致發光層、第三PL層 23‧‧‧ Third photoluminescent layer, third PL layer

231‧‧‧第三高分子材料 231‧‧‧ Third polymer material

232‧‧‧非濕氣敏感之光致發光材料、濕敏材料 232‧‧‧ Non-moisture sensitive photoluminescent materials, moisture sensitive materials

24‧‧‧吸濕層 24‧‧‧Moisture absorbing layer

241‧‧‧透明高分子材料 241‧‧‧Transparent polymer materials

242‧‧‧吸濕材料 242‧‧‧Hydrautical materials

30‧‧‧反射結構 30‧‧‧Reflective structure

31‧‧‧第三高分子材料 31‧‧‧ Third polymer material

32‧‧‧光學散射性微粒 32‧‧‧Optical scattering particles

40‧‧‧基板 40‧‧‧Substrate

50‧‧‧光透明濕氣阻隔層 50‧‧‧Light transparent moisture barrier

60‧‧‧濕氣阻隔結構 60‧‧‧Moisture barrier structure

61‧‧‧第四高分子材料 61‧‧‧ fourth polymer material

70‧‧‧透明封裝結構 70‧‧‧Transparent package structure

71‧‧‧透明高分子材料 71‧‧‧Transparent polymer materials

80‧‧‧封裝結構 80‧‧‧Package structure

81‧‧‧導線架 81‧‧‧ lead frame

811‧‧‧第一電極 811‧‧‧First electrode

812‧‧‧第二電極 812‧‧‧second electrode

82‧‧‧反射體 82‧‧‧ reflector

821‧‧‧凹槽 821‧‧‧ Groove

83‧‧‧透明高分子材料 83‧‧‧Transparent polymer materials

第1A圖及第1B圖為依據本發明之第1較佳實施例之發光裝置的各種型態的剖面示意圖;第2A圖至第2D圖為依據本發明之第2較佳實施例之發光裝置的各種型態的剖面示意圖;第3圖為依據本發明之第3較佳實施例之發光裝置的剖面示意圖;第4A圖及第4B圖為依據本發明之第4較佳實施例之發光裝置的各種型態的剖面示意圖;第5A圖及第5B圖為依據本發明之第5較佳實施例之發光裝置的各種型態的剖面示意圖。 1A and 1B are cross-sectional views showing various aspects of a light-emitting device according to a first preferred embodiment of the present invention; and FIGS. 2A to 2D are light-emitting devices according to a second preferred embodiment of the present invention; 3 is a schematic cross-sectional view of a light emitting device according to a third preferred embodiment of the present invention; and FIGS. 4A and 4B are light emitting devices according to a fourth preferred embodiment of the present invention; FIG. 5A and FIG. 5B are schematic cross-sectional views showing various types of light-emitting devices according to a fifth preferred embodiment of the present invention.

請參閱第1A圖,其為依據本發明第1較佳實施例的發光裝置1的一示意圖。發光裝置1可包含一藍光LED晶片10、一光致發光結構20及一反射結構30,各元件之技術內容將依序說明如下。 Please refer to FIG. 1A, which is a schematic diagram of a light-emitting device 1 according to a first preferred embodiment of the present invention. The illuminating device 1 can include a blue LED chip 10, a photoluminescent structure 20, and a reflective structure 30. The technical contents of each component will be described below.

藍光LED晶片(以下簡稱為LED晶片)10可為一覆晶式LED晶片,其包含一上表面11、一下表面12、一立面13及一電極組14。上表面11與下表面12為相對且相反地設置,立面13形成於上表面11與下表面12之間、且連接上表面11與下表面12,換言之,立面13沿著上表面11之邊緣與下表面12之邊緣而形成,故立面13相對於上表面11與下表面12為環形(例如矩型環)。 The blue LED chip (hereinafter referred to as LED chip) 10 may be a flip chip type LED chip including an upper surface 11, a lower surface 12, a vertical surface 13 and an electrode group 14. The upper surface 11 and the lower surface 12 are oppositely and oppositely disposed, and the elevation surface 13 is formed between the upper surface 11 and the lower surface 12 and connects the upper surface 11 and the lower surface 12, in other words, the elevation 13 along the upper surface 11 The rim is formed with the edge of the lower surface 12, so the façade 13 is annular (e.g., a rectangular ring) with respect to the upper surface 11 and the lower surface 12.

電極組14設置於下表面12上,且可具有二個以上之電極。電能(圖未示)可透過電極組14供應至LED晶片10內,以使LED晶片10發出符合藍光波長範圍之光線;該光線絕大多數可從上表面11及立面13射出。 The electrode group 14 is disposed on the lower surface 12 and may have more than two electrodes. Electrical energy (not shown) may be supplied to the LED wafer 10 through the electrode assembly 14 to cause the LED wafer 10 to emit light in accordance with the wavelength range of the blue light; most of the light may be emitted from the upper surface 11 and the elevation 13.

光致發光(Photoluminescent,PL)結構20在受到LED晶片10所發出的藍光光線照射後,可吸收部份該藍光光線而產生出不同波長之光線(例如紅光及綠光),然後藍光光線與其他光線相混合後,可構成所需顏色之光線(例如為白光)。 The photoluminescent (PL) structure 20, after being irradiated by the blue light emitted by the LED chip 10, can absorb part of the blue light to generate light of different wavelengths (for example, red light and green light), and then the blue light and When other light rays are mixed, they can form light of a desired color (for example, white light).

外觀上,光致發光結構(以下簡稱為PL結構)20包括一頂面201、一底面202及一側面203,頂面201與底面202為相對且相反設置,側面203形成於頂面201及底面202之間,且連接頂面201與底面202,換言之,側面203相對於頂面201及底面202為環形(例如矩型環)。 Appearance, the photoluminescent structure (hereinafter referred to as PL structure) 20 includes a top surface 201, a bottom surface 202 and a side surface 203. The top surface 201 and the bottom surface 202 are opposite and oppositely disposed, and the side surface 203 is formed on the top surface 201 and the bottom surface. Between 202, and connecting the top surface 201 and the bottom surface 202, in other words, the side surface 203 is annular (e.g., a rectangular ring) with respect to the top surface 201 and the bottom surface 202.

位置上,PL結構20設置於LED晶片10上,也就是,PL結構20的底面202位於LED晶片10之上表面11上,且底面202可覆蓋於上表面11上。於其他可能態樣中,底面202與上表面11相距,表示PL結構20與LED晶片10之間可設置其他結構或材料(圖未示)。此外,底面202可略大於上表面11,但不以此為限。結構上,PL結構20包括一第一光致發光層(以下簡 稱為第一PL層)21及一第二光致發光層(以下簡稱為第二PL層)22;該第一PL層21設置於第二PL層22上,兩者可相堆疊,或者兩者可相距,以供其他結構或材料設置於其間。 Positionally, the PL structure 20 is disposed on the LED wafer 10, that is, the bottom surface 202 of the PL structure 20 is on the upper surface 11 of the LED wafer 10, and the bottom surface 202 can be overlaid on the upper surface 11. In other possible aspects, the bottom surface 202 is spaced from the upper surface 11 to indicate that other structures or materials (not shown) may be disposed between the PL structure 20 and the LED wafer 10. In addition, the bottom surface 202 may be slightly larger than the upper surface 11, but is not limited thereto. Structurally, the PL structure 20 includes a first photoluminescent layer (hereinafter simply It is referred to as a first PL layer 21 and a second photoluminescent layer (hereinafter simply referred to as a second PL layer) 22; the first PL layer 21 is disposed on the second PL layer 22, and the two may be stacked, or two They may be spaced apart for other structures or materials to be placed therebetween.

第一PL層21可包含一第一高分子材料211及一非濕氣敏感之光致發光材料(以下簡稱為非濕敏材料)212,非濕敏材料212可均勻地混合且固定於第一高分子材料211中。非濕敏材料212在受到藍光光線照射後可產生其他波長之光線(例如綠光光線)。非濕敏材料212可不包含易被氧化之活性元素,故接觸到濕氣後不易生成氧化物(氧化物的形成會造成無法產生光線或是所產生的光線的波長不符所需)。換言之,非濕敏材料212接觸濕氣後亦可產生所需波長之光線,不易受濕氣的影響而改變其光轉換特性。非濕敏材料212例如可包括但不限定:一無機螢光材料或一氮氧化物綠色螢光材料,而其中的氮氧化物綠色螢光材料更為β-SiAlON。 The first PL layer 21 may include a first polymer material 211 and a non-moisture sensitive photoluminescent material (hereinafter referred to as non-humidity sensitive material) 212. The non-humidity sensitive material 212 may be uniformly mixed and fixed to the first layer. In the polymer material 211. The non-humidity sensitive material 212 can generate light of other wavelengths (eg, green light) after being exposed to blue light. The non-humidity sensitive material 212 may not contain an active element which is easily oxidized, so that it is less likely to form an oxide upon contact with moisture (the formation of an oxide may cause the generation of light or the wavelength of the generated light does not conform to the desired wavelength). In other words, the non-humidity sensitive material 212 can also generate light of a desired wavelength after being exposed to moisture, and is not susceptible to moisture to change its light conversion characteristics. The non-humidity sensitive material 212 may include, but is not limited to, an inorganic fluorescent material or an oxynitride green fluorescent material, and the oxynitride green fluorescent material is more β-SiAlON.

非濕敏材料212除了不易受濕氣影響外,非濕敏材料212亦可阻礙濕氣的通過。下表為薄膜水氣穿透率之量測數據,矽膠薄膜A僅由矽膠組成,其所量測到的水氣穿透率為10.51(g/m2/day);矽膠薄膜B除了矽膠之外,亦包含一重量百分比60%的非濕氣敏感螢光材料,可使水氣穿透率減小至8.31(g/m2/day)。因此,當第一高分子材料211包含非濕敏材料212時,可進一步降低第一PL層21之水氣穿透率。 In addition to being less susceptible to moisture, the non-humidity sensitive material 212 can also impede the passage of moisture. The following table shows the measurement data of the water vapor transmission rate of the film. The silicone film A consists only of tannin gel, and the measured water vapor permeability is 10.51 (g/m 2 /day); the silicone film B except the tannin extract In addition, a 60% by weight non-moisture sensitive fluorescent material is included to reduce the water vapor transmission rate to 8.31 (g/m 2 /day). Therefore, when the first polymer material 211 contains the non-moisture sensitive material 212, the water vapor permeability of the first PL layer 21 can be further reduced.

當非濕敏材料212在第一PL層21中的重量百分比越大時,即堆疊密度越高,阻礙濕氣的效果則越佳。因此,較佳地,非濕敏材料212在第一PL層21中的重量百分比不小50%、不小於60%或不小於70%。為使非濕敏材料212有較高的堆疊密度,非濕敏材料212的粒徑中位值(D50)較佳地不大於30微米、不大於20微米或不大於10微米。 When the weight percentage of the non-humidity sensitive material 212 in the first PL layer 21 is larger, that is, the higher the stack density, the effect of hindering moisture is better. Therefore, preferably, the weight percentage of the non-humidity sensitive material 212 in the first PL layer 21 is not less than 50%, not less than 60% or not less than 70%. In order to have a higher packing density of the non-humidity sensitive material 212, the median value (D50) of the particle diameter of the non-humidity sensitive material 212 is preferably no greater than 30 microns, no greater than 20 microns, or no greater than 10 microns.

除了非濕敏材料212可阻礙濕氣通過,第一高分子材料211亦可。第一高分子材料211可選用具有較低水氣滲透率(water vapor transmission rate,WVTR)者,例如不大於10g/m2/day,以增加阻隔濕氣的功效。第一高分子材料211可包括但不限定:一樹脂材料或一矽膠材料。 The first polymer material 211 may be used in addition to the non-humidity sensitive material 212 that hinders the passage of moisture. The first polymer material 211 can be selected to have a lower water vapor transmission rate (WVTR), for example, not more than 10 g/m 2 /day, to increase the effectiveness of blocking moisture. The first polymer material 211 may include, but is not limited to, a resin material or a silicone material.

綜上,第一PL層21的第一高分子材料211及非濕敏材料212皆可阻礙濕氣通過,故整體上第一PL層21減少濕氣對於其下的第二PL層22的影響。 In summary, the first polymer material 211 and the non-humidity material 212 of the first PL layer 21 can block the passage of moisture, so that the first PL layer 21 as a whole reduces the influence of moisture on the second PL layer 22 underneath. .

第二PL層22可包含一第二高分子材料221及一濕氣敏感之光致發光材料(以下簡稱為濕敏材料)222,濕敏材料222可均勻地混合及固定於第二高分子材料221中。濕敏材料222在受到藍光光線照射後可產生其他波長之光線(例如紅光光線),且較佳地其發光頻譜(spectrum)較窄。 The second PL layer 22 may include a second polymer material 221 and a moisture sensitive photoluminescent material (hereinafter referred to as a humidity sensitive material) 222. The moisture sensitive material 222 may be uniformly mixed and fixed to the second polymer material. 221. The moisture sensitive material 222 can generate light of other wavelengths (for example, red light) after being irradiated with blue light, and preferably has a narrower spectrum of light emission.

濕敏材料222由於為一含易被氧化之活性元素(activator)的螢光材料或一量子點(quantum dots)光致發光材料,濕氣易造成濕敏材料222難以產生光線或是所產生的光線的波長不符所需。然而,第一PL層21可阻礙濕氣通過,減少濕氣穿透至濕敏材料222的可能。因此,濕敏材料222 的使用壽命可較長。第二高分子材料221亦可選用具有較低水氣滲透率者(例如具低水氣滲透率之樹脂或矽膠材料),更進一步減少濕氣穿透至濕敏材料222的可能。 The moisture sensitive material 222 is a fluorescent material containing a oxidizable active activator or a quantum dot photoluminescent material, and moisture easily causes the moisture sensitive material 222 to be difficult to generate light or generated. The wavelength of the light does not match the required. However, the first PL layer 21 may hinder the passage of moisture, reducing the possibility of moisture penetrating into the moisture sensitive material 222. Therefore, the moisture sensitive material 222 The service life can be longer. The second polymer material 221 can also be selected to have a low water vapor permeability (for example, a resin having a low water vapor permeability or a silicone material), further reducing the possibility of moisture penetrating into the moisture sensitive material 222.

本實施例中,濕敏材料222可包含一氟化物紅色螢光材料,而該氟化物紅色螢光材料至少包含下列其中一者:(A)A2[MF6]:M4+,其中A選自Li、Na、K、Rb、Cs、NH4及其組合,M選自Ge、Si、Sn、Ti、Zr及其組合;(B)E2[MF6]:M4+,其中E選自Mg、Ca、Sr、Ba、Zn及其組合,M選自Ge、Si、Sn、Ti、Zr及其組合;(C)Ba0.65Zr0.35F2.70:M4+;或(D)A3[ZrF7]:M4+,其中A選自Li、Na、K、Rb、Cs、NH4及其組合。 In this embodiment, the moisture sensitive material 222 may comprise a fluoride red fluorescent material, and the fluoride red fluorescent material comprises at least one of: (A) A 2 [MF 6 ]: M 4+ , wherein A Selected from Li, Na, K, Rb, Cs, NH 4 and combinations thereof, M is selected from the group consisting of Ge, Si, Sn, Ti, Zr, and combinations thereof; (B) E 2 [MF 6 ]: M 4+ , wherein E Selected from Mg, Ca, Sr, Ba, Zn, and combinations thereof, M is selected from the group consisting of Ge, Si, Sn, Ti, Zr, and combinations thereof; (C) Ba 0.65 Zr 0.35 F 2.70 : M 4+ ; or (D) A 3 [ZrF 7 ]: M 4+ , wherein A is selected from the group consisting of Li, Na, K, Rb, Cs, NH 4 and combinations thereof.

第一PL層21及第二PL層22的形成可藉由噴塗(spraying)、點膠(dispensing)、印刷(printing)、模造(molding)等方式來達成。以第一PL層21為例來說明,未固化的第一高分子材料211及非濕敏材料212先混合後,然後透過上述方式沈積至一基材等結構(圖未示)上;待第一高分子材料211固化並將基材移除後,形成第一PL層21。 The formation of the first PL layer 21 and the second PL layer 22 can be achieved by spraying, dispensing, printing, molding, or the like. Taking the first PL layer 21 as an example, the uncured first polymer material 211 and the non-humidity sensitive material 212 are first mixed, and then deposited on a substrate or the like (not shown) by the above method; After the polymer material 211 is cured and the substrate is removed, the first PL layer 21 is formed.

雖然噴塗(spraying)、點膠(dispensing)、印刷(printing)、模造(molding)等方式可形成第一PL層21,但難以形成較高密度堆疊之非濕敏材料212,因此其濕氣阻隔效果較差。較佳地,第一PL層21及第二PL層22的形成可藉由先前提出的公開號US2010/0119839之美國專利申請案(對應於證書號I508331之臺灣專利)所揭露的方法來達成。該方法可以使材料均勻地沈積,故第一PL層21及第二PL層22可有均勻的厚度。此外,該方法可使得材料密集地沈積,故第一PL層21的非濕敏材料212可不小50%、不小於60%或不小於70%的重量百分比。 Although the first PL layer 21 can be formed by spraying, dispensing, printing, molding, etc., it is difficult to form the non-moisture sensitive material 212 of the higher density stack, so that the moisture barrier is formed. The effect is poor. Preferably, the formation of the first PL layer 21 and the second PL layer 22 can be achieved by the method disclosed in the previously proposed US Patent Application Publication No. US 2010/0119839 (corresponding to Taiwan Patent No. I508331). This method allows the material to be uniformly deposited, so that the first PL layer 21 and the second PL layer 22 can have a uniform thickness. Further, the method can cause the material to be densely deposited, so the non-humidity sensitive material 212 of the first PL layer 21 can be not less than 50%, not less than 60%, or not less than 70% by weight.

另說明的是,第一PL層21及第二PL層22係個別製作,非一體成形,以避免第二PL層22的濕敏材料222混入第一PL層21的第一高分子材料211。 It is to be noted that the first PL layer 21 and the second PL layer 22 are separately formed and are not integrally formed to prevent the moisture sensitive material 222 of the second PL layer 22 from being mixed into the first polymer material 211 of the first PL layer 21.

反射結構30圍繞LED晶片10及PL結構20,用以反射LED晶片10及PL結構20所產生之光線,形成光反射層;換言之,光線主要是朝上從PL結構20之頂面201射出。反射結構30可覆蓋且直接接觸LED晶片10之立面13及PL結構20之側面203。 The reflective structure 30 surrounds the LED chip 10 and the PL structure 20 for reflecting the light generated by the LED chip 10 and the PL structure 20 to form a light reflecting layer; in other words, the light is mainly emitted upward from the top surface 201 of the PL structure 20. The reflective structure 30 can cover and directly contact the façade 13 of the LED wafer 10 and the side 203 of the PL structure 20.

反射結構30亦可阻礙濕氣通過,以減少濕氣接觸到濕敏材料222之可能。為此,反射結構30所包含的一第三高分子材料31及混合於第三高分材料31之一光學散射性微粒32較佳地可採取以下之配置:第三高分子材料31可選用具有較低水氣滲透率者(例如不大於10g/m2/day),例如可包括一樹脂材料或一矽膠材料。而光學散射性微粒32在反射結構30中的一重量百分比不小於30%。光學散射性微粒32具體可為二氧化鈦(TiO2)、氮化硼(BN)、二氧化矽(SiO2)或三氧化二鋁(Al2O3)等。 The reflective structure 30 can also block the passage of moisture to reduce the likelihood of moisture contacting the moisture sensitive material 222. Therefore, a third polymer material 31 included in the reflective structure 30 and one of the optical diffusing particles 32 mixed with the third high-part material 31 may preferably be configured as follows: The third polymer material 31 may be optionally provided. Those having a lower moisture permeability (for example, not more than 10 g/m 2 /day) may include, for example, a resin material or a silicone material. The weight percentage of the optically scattering particles 32 in the reflective structure 30 is not less than 30%. The optically scattering fine particles 32 may specifically be titanium oxide (TiO 2 ), boron nitride (BN), cerium oxide (SiO 2 ) or aluminum oxide (Al 2 O 3 ).

在製作上,可透過點膠(dispensing)、印刷(printing)或模造(molding)等方法來形成反射結構30。舉例而言,可先將光學散射性微粒32混合於第三高分材料31以製作反射結構30之製造材料,接著再透過點膠、印刷或模造等方法將反射結構30之製造材料圍繞於晶片10與PL結構20之四周,並予以固化,以形成反射結構30。 In fabrication, the reflective structure 30 can be formed by methods such as dispensing, printing, or molding. For example, the optical scattering particles 32 may be first mixed with the third high-division material 31 to fabricate the manufacturing material of the reflective structure 30, and then the manufacturing material of the reflective structure 30 may be surrounded by the wafer by means of dispensing, printing or molding. 10 and the periphery of the PL structure 20 are cured to form the reflective structure 30.

請參閱第1B圖,其為依據本發明第1較佳實施例的發光裝置1的另一示意圖。可選擇地,發光裝置1更包含一基板40,而LED晶片10及反射結構30設置於基板40上。基板40可包括但不限定:一陶瓷基板、一玻 璃基板、一印刷電路板或一金屬芯電路板(metal core PCB)。在製作上,可使用共晶銲接或回流銲接將第1A圖所示之發光裝置1接合至基板40上。 Please refer to FIG. 1B, which is another schematic diagram of a light-emitting device 1 according to a first preferred embodiment of the present invention. Optionally, the light emitting device 1 further includes a substrate 40, and the LED chip 10 and the reflective structure 30 are disposed on the substrate 40. The substrate 40 can include, but is not limited to: a ceramic substrate, a glass A glass substrate, a printed circuit board or a metal core PCB. In fabrication, the light-emitting device 1 shown in FIG. 1A can be bonded to the substrate 40 using eutectic soldering or reflow soldering.

藉此,發光裝置1可至少有以下技術特點: Thereby, the light-emitting device 1 can have at least the following technical features:

1、LED晶片10所產生的藍光光線可使第一PL層21及第二PL層22產生不同波長之光線(例如綠光及紅光光線),然後該等光線混合可形成一特定頻譜之光線(例如白光光線)。 1. The blue light generated by the LED chip 10 causes the first PL layer 21 and the second PL layer 22 to generate light of different wavelengths (for example, green light and red light), and then the light is mixed to form a specific spectrum of light. (eg white light).

2、第一PL層21除了可產生光線外,更可阻礙來自其上方的濕氣通過,故可保護第二PL層22的濕敏材料222。反射結構30可阻礙來自其周圍的濕氣,而LED晶片10亦可阻礙來自其下方的濕氣通過。換言之,第一PL層21、反射結構30及LED晶片10此三個結構將第二PL層22包覆於其中,形成對第二PL層22的濕敏材料222之保護。第一至第三高分子材料211、221、31都可具有低水氣滲透率,以增加對濕敏材料222的保護。 2. The first PL layer 21 can block the moisture permeation from the upper portion of the second PL layer 22, in addition to generating light. The reflective structure 30 can block moisture from its surroundings, and the LED wafer 10 can also block the passage of moisture from beneath it. In other words, the three structures of the first PL layer 21, the reflective structure 30, and the LED wafer 10 encapsulate the second PL layer 22 therein to form a protection for the moisture sensitive material 222 of the second PL layer 22. The first to third polymer materials 211, 221, 31 may each have a low water vapor permeability to increase the protection of the moisture sensitive material 222.

3、第一PL層21並非僅依靠第一高分子材料211來阻隔濕氣,非濕敏材料212亦能阻隔濕氣,故第一高分子材料211不需較大之厚度。此外,非濕敏材料212可有較小的粒徑、或較密集地分布,使得非濕敏材料212的重量百分比增加時,第一高分子材料211之厚度不會成比例地增加,例如僅微幅增加。如此,可使第一PL層21具有低水氣滲透率的同時,還可使第一PL層21維持相近的厚度。因此,發光裝置1在保有濕氣阻隔的機制下,其整體尺寸仍可滿足晶片級封裝之要求。 3. The first PL layer 21 does not rely solely on the first polymer material 211 to block moisture, and the non-humidity material 212 can also block moisture, so the first polymer material 211 does not need a large thickness. In addition, the non-humidity sensitive material 212 may have a smaller particle size or a more dense distribution, such that when the weight percentage of the non-humidity sensitive material 212 is increased, the thickness of the first polymer material 211 does not increase proportionally, for example only Increased slightly. Thus, the first PL layer 21 can be made to have a low water vapor permeability while maintaining the first PL layer 21 at a similar thickness. Therefore, the overall size of the illuminating device 1 under the mechanism of retaining moisture can still meet the requirements of wafer level packaging.

以上是發光裝置1的技術內容的說明,接著說明依據本發明其他實施例的技術內容,而各實施例的技術內容應可互相參考,故相同的部分將省略或簡化。此外,各實施例的技術內容應可互相應用。 The above is a description of the technical content of the illuminating device 1. Next, the technical contents according to other embodiments of the present invention will be described, and the technical contents of the respective embodiments should be referred to each other, and the same portions will be omitted or simplified. Furthermore, the technical content of the embodiments should be applicable to each other.

請參閱第2A圖至第2D圖,其為依據本發明第2較佳實施例的發光裝置2的各種型態的示意圖。如第2A圖所示,發光裝置2除了包含LED晶片10、PL結構20及反射結構30外,更可包含一光透明濕氣阻隔層50。 Please refer to FIGS. 2A to 2D, which are schematic views of various types of the light-emitting device 2 according to the second preferred embodiment of the present invention. As shown in FIG. 2A, the light-emitting device 2 further includes a light-transparent moisture barrier layer 50 in addition to the LED wafer 10, the PL structure 20, and the reflective structure 30.

具體而言,光透明濕氣阻隔層50設置於PL結構20上,且可進一步延伸設置至反射結構30上。或者,光透明濕氣阻隔層50僅設置於PL結構20上,且被反射結構30圍繞(圖未示)。光透明濕氣阻隔層50不會阻礙光線通過、但可阻礙濕氣通過其中,以使得濕氣更難穿透至濕敏材料222。光透明濕氣阻隔層50可包含但不限定:一透明無機層(例如玻璃)或一低水氣滲透率高分子層(例如聚合物)。在製作上,可將光透明濕氣阻隔層50貼合至發光裝置1上,形成如2A圖所示之發光裝置2。 Specifically, the light transparent moisture barrier layer 50 is disposed on the PL structure 20 and may be further extended to the reflective structure 30. Alternatively, the light transparent moisture barrier layer 50 is disposed only on the PL structure 20 and is surrounded by the reflective structure 30 (not shown). The light transparent moisture barrier layer 50 does not block the passage of light, but can block moisture from passing therethrough, making it more difficult for moisture to penetrate to the moisture sensitive material 222. The light transparent moisture barrier layer 50 may include, but is not limited to, a transparent inorganic layer (such as glass) or a low water vapor permeability polymer layer (such as a polymer). In the production, the light-transparent moisture barrier layer 50 can be attached to the light-emitting device 1 to form the light-emitting device 2 as shown in Fig. 2A.

如第2B圖所示,發光裝置2的PL結構20可更包含一透明之吸濕層(getter layer)24,吸濕層24夾置於第一PL層21及第二PL層22之間,藉由光透明濕氣阻隔層50及第一PL層21阻擋大部分之濕氣,但是少許濕氣仍可能會通過該些濕氣阻隔結構,此時該濕氣可被吸濕層24吸收而更減少第二PL層22的濕敏材料222受濕氣影響的機會。 As shown in FIG. 2B, the PL structure 20 of the light-emitting device 2 may further include a transparent getter layer 24 interposed between the first PL layer 21 and the second PL layer 22. The majority of the moisture is blocked by the light transparent moisture barrier layer 50 and the first PL layer 21, but a little moisture may still pass through the moisture barrier structures, and the moisture may be absorbed by the moisture absorbing layer 24 at this time. The chance of the moisture sensitive material 222 of the second PL layer 22 being affected by moisture is further reduced.

吸濕層24可實施成包含一透明高分子材料241及混合於透明高分子材料中的吸濕材料(getter material)242,透明高分子材料241例如可為一樹脂、一矽膠、一橡膠或一塑膠等光學透明材料,且較佳地可耐熱而不劣化;吸濕材料242可包含複數個奈米微粒,例如可包含以下列舉的其中一者或其組合:沸石(zeolite)、沸石陶土(zeolitic clays)、氧化鈣(CaO)、氧化鋇(BaO)、氧化鋁(alumina)、鈣、鋇、鈦、金屬合金、吸水氧化物(water absorbing oxides)、活性碳(activated carbon)、吸收性有機或無機材 料(absorptive organic or inorganic materials)等;奈米微粒的粒徑可小於四分之一的可見光波長,例如小於200奈米或更小於100奈米。在製作上,舉例而言,可透過點膠、印刷、模造或噴塗(spray coating)等方法來形成吸濕層24。 The moisture absorbing layer 24 can be implemented as a transparent polymer material 241 and a getter material 242 mixed in the transparent polymer material. The transparent polymer material 241 can be, for example, a resin, a silicone rubber, a rubber or a An optically transparent material such as plastic, and preferably heat resistant without deterioration; the moisture absorbing material 242 may comprise a plurality of nanoparticles, for example, one or a combination of the following: zeolite (zeolite), zeolitic (zeolitic) Clays), calcium oxide (CaO), barium oxide (BaO), alumina, calcium, barium, titanium, metal alloys, water absorbing oxides, activated carbon, absorbent organic or Inorganic material Absorptive organic or inorganic materials, etc.; the particle size of the nanoparticles may be less than a quarter of the wavelength of visible light, such as less than 200 nanometers or less. In the production, for example, the moisture absorbing layer 24 can be formed by a method such as dispensing, printing, molding, or spray coating.

吸濕層24亦可實施成無微粒(particle-free)者,即吸濕層24可由一透明液狀的吸濕材料固化而成。此種吸濕層24的技術內容至少可參閱公開號US2013/0181163A1之美國專利申請案所揭露者。 The moisture absorbing layer 24 can also be formed as a particle-free, that is, the moisture absorbing layer 24 can be cured by a transparent liquid hygroscopic material. The technical content of such a moisture absorbing layer 24 can be found at least in the U.S. Patent Application Publication No. US 2013/0181163 A1.

如第2C圖所示,發光裝置2的PL結構20的第一PL層21及/或第二PL層22可直接地包含一吸溼材料242,也就是,吸溼材料242直接地混合於第一高分子材料211及/或第二高分子材料221中。如第2D圖所示,反射結構30亦可包含一吸溼材料242,即吸溼材料242混合於第三高分子材料31中。如此,進入至第一高分子材料211、第二高分子材料221及/或第三高分子材料31中的濕氣可被吸濕材料242吸收而更難接觸到濕敏材料222。 As shown in FIG. 2C, the first PL layer 21 and/or the second PL layer 22 of the PL structure 20 of the light-emitting device 2 may directly comprise a moisture absorbing material 242, that is, the moisture absorbing material 242 is directly mixed with A polymer material 211 and/or a second polymer material 221 . As shown in FIG. 2D, the reflective structure 30 can also include a moisture absorbing material 242, that is, the moisture absorbing material 242 is mixed in the third polymer material 31. Thus, the moisture entering the first polymer material 211, the second polymer material 221, and/or the third polymer material 31 can be absorbed by the moisture absorbing material 242 to be more difficult to contact the moisture sensitive material 222.

綜上,發光裝置2透過光透明濕氣阻隔層50、吸濕層24或吸濕材料242,進一步避免濕氣接觸濕敏材料222。 In summary, the illuminating device 2 transmits the light transparent moisture barrier layer 50, the moisture absorbing layer 24 or the moisture absorbing material 242 to further prevent moisture from contacting the moisture sensitive material 222.

請參閱第3圖,其為依據本發明第3較佳實施例的發光裝置3的一示意圖。發光裝置3除了包含LED晶片10、PL結構20、反射結構30及光透明濕氣阻隔層50外,更包含一濕氣阻隔結構60。 Please refer to FIG. 3, which is a schematic diagram of a light-emitting device 3 according to a third preferred embodiment of the present invention. The light-emitting device 3 further includes a moisture blocking structure 60 in addition to the LED wafer 10, the PL structure 20, the reflective structure 30, and the light-transparent moisture barrier layer 50.

具體而言,雖然可選用具低水氣穿透率之高分子材料來形成反射結構30以獲得較佳之濕氣阻隔能力,但低水氣穿透率之高分子材料通常較易因紫外光及藍光之照射而劣化,且其熱穩定性較差,因此較不適用於高功率LED發光裝置;為解決此問題,發光裝置3更包含濕氣阻隔結構 60,其圍繞反射結構30,且可覆蓋反射結構30之外側面,藉此設計,反射結構30可選用較耐熱與較耐藍光照射但不需低水氣穿透率之高分子材料,並提供反射LED晶片10藍色光線之功能,而濕氣阻隔結構60可選用低水氣穿透率之高分子材料,以提供阻礙濕氣通過之功能,如此可使發光裝置3同時具有較佳之耐熱性與溼氣阻隔能力;而光透明濕氣阻隔層50亦可延伸而設置於濕氣阻隔結構60上。 Specifically, although a low water vapor permeability polymer material may be selected to form the reflective structure 30 to obtain a better moisture barrier capability, a low water vapor permeability polymer material is generally more susceptible to ultraviolet light and The blue light is deteriorated by irradiation, and its thermal stability is poor, so it is not suitable for high-power LED light-emitting devices; to solve this problem, the light-emitting device 3 further includes a moisture blocking structure. 60, which surrounds the reflective structure 30 and can cover the outer side of the reflective structure 30, whereby the reflective structure 30 can be selected from a polymer material that is more heat-resistant and more resistant to blue light radiation but does not require low water vapor permeability, and provides The function of reflecting the blue light of the LED chip 10, and the moisture blocking structure 60 can use a polymer material with low water vapor permeability to provide a function of hindering the passage of moisture, so that the light-emitting device 3 can have better heat resistance at the same time. The moisture barrier layer 50 can also be extended to be disposed on the moisture barrier structure 60.

由於濕氣阻隔結構60可阻礙濕氣的通過,故所包含的一第四高分子材料61具有較低的水氣滲透率(例如不大於10g/m2/day);該第四高分子材料61可包括但不限定:一樹脂材料或一矽膠材料,而樹脂或矽膠材料可選用具有較高比例的官能基(function group),例如苯基(phenyl)等,以降低其水氣滲透率。 Since the moisture barrier structure 60 can block the passage of moisture, the fourth polymer material 61 included has a low water vapor permeability (for example, not more than 10 g/m 2 /day); the fourth polymer material 61 may include, but is not limited to, a resin material or a silicone material, and the resin or silicone material may be selected to have a higher proportion of function groups, such as phenyl or the like, to reduce its water vapor permeability.

濕氣阻隔結構60亦可包含光學散射性微粒(圖未示),其混合於第四高分材料61之中,且在濕氣阻隔結構60中的一重量百分比不小於10%。如此,濕氣阻隔結構60亦可適當地反射光線,減少光線通過濕氣阻隔結構60而從側面射出的可能性,且濕氣阻隔結構60之水氣滲透率可進一步降低。 The moisture barrier structure 60 may also include optically scattering particles (not shown) that are mixed into the fourth high-sort material 61 and have a weight percentage of not less than 10% in the moisture barrier structure 60. As such, the moisture barrier structure 60 can also appropriately reflect light, reduce the possibility of light being emitted from the side through the moisture barrier structure 60, and the moisture permeability of the moisture barrier structure 60 can be further reduced.

另一方面,反射結構30可將大部分LED晶片10及PL結構20所產生的光線(尤其是藍光或紫外光)反射,因此減少了光線穿透到濕氣阻隔結構60的劑量,故在此結構設計下,濕氣阻隔結構60不易因為高劑量藍光照射而劣化,此外,在反射結構30的緩衝下,可減少濕氣阻隔結構60所受到的熱影響,因此較不易因受熱而產生材料劣化。同時,對反射結構30而言,為了避免或減少其材料因為受藍光及紫外光照射或受高溫影響而 劣化,反射結構30之第三高分子材料31的樹脂或矽膠材料可選用較不易受藍光及紫外光照射而劣化者,以及具有較佳之高溫穩定性者,例如選用具有較低比例之官能基(例如苯基等)的樹脂或矽膠材料。 On the other hand, the reflective structure 30 can reflect most of the light generated by the LED chip 10 and the PL structure 20 (especially blue light or ultraviolet light), thereby reducing the dose of light penetrating into the moisture barrier structure 60, so here Under the structural design, the moisture barrier structure 60 is not easily deteriorated by high-dose blue light irradiation, and further, under the buffer of the reflective structure 30, the heat influence of the moisture barrier structure 60 can be reduced, so that material deterioration due to heat is less likely to occur. . At the same time, in order to avoid or reduce the material of the reflective structure 30, it is exposed to blue light and ultraviolet light or is affected by high temperature. Degraded, the resin or silicone material of the third polymer material 31 of the reflective structure 30 may be selected from those which are less susceptible to degradation by blue light and ultraviolet light, and those having better high temperature stability, for example, a functional group having a lower ratio (for example) For example, a resin such as phenyl or the like, or a silicone material.

在製作上,可透過點膠、印刷或模造等方法來形成濕氣阻隔結構60。舉例而言,可參考前述發光裝置1之反射結構30的製作方法,於製作完成反射結構30後,再以點膠、印刷或模造等方法將濕氣阻隔結構60之製造材料圍繞於反射結構30之四周,並予以固化,以形成濕氣阻隔結構60;此外,可依製程之需求,於形成濕氣阻隔結構60之前或之後將光透明濕氣阻隔層50設置於PL結構20上。如此便可形成具濕氣阻隔結構60及光透明濕氣阻隔層50之發光裝置3。 In the production, the moisture barrier structure 60 can be formed by methods such as dispensing, printing or molding. For example, referring to the manufacturing method of the reflective structure 30 of the foregoing illuminating device 1, after the reflective structure 30 is completed, the manufacturing material of the moisture blocking structure 60 is surrounded by the reflective structure 30 by means of dispensing, printing or molding. It is surrounded and cured to form a moisture barrier structure 60. Further, the optically transparent moisture barrier layer 50 may be disposed on the PL structure 20 before or after the formation of the moisture barrier structure 60 as required by the process. Thus, the light-emitting device 3 having the moisture barrier structure 60 and the light-transparent moisture barrier layer 50 can be formed.

綜上,發光裝置3透過濕氣阻隔結構60,進一步避免濕氣接觸濕敏材料222。 In summary, the light-emitting device 3 passes through the moisture barrier structure 60 to further prevent moisture from contacting the moisture-sensitive material 222.

雖然本發明所揭露之發光裝置1至3可有效改善晶片級封裝發光裝置之防水性,但其僅適用於小發光角度之單面發光晶片級封裝發光裝置。根據本發明所提出的濕氣阻隔之分層光致發光結構,亦可應用於使用濕氣敏感光致發光材料之五面發光晶片級封裝發光裝置,以適用於需大發光角度之應用。 Although the light-emitting devices 1 to 3 disclosed in the present invention can effectively improve the waterproofness of the wafer-level package light-emitting device, they are only applicable to a single-sided light-emitting chip-level package light-emitting device with a small light-emitting angle. The layered photoluminescence structure of the moisture barrier according to the present invention can also be applied to a five-sided light-emitting wafer level package light-emitting device using a moisture-sensitive photoluminescence material, which is suitable for applications requiring a large illumination angle.

請參閱第4A圖及第4B圖,其為依據本發明第4較佳實施例的發光裝置4的各種型態的示意圖。如第4A圖所示,發光裝置4包含一LED晶片10、一PL結構20’及一透明封裝結構70,其中PL結構20’不同於前述實施例中的PL結構20(如第1A圖所示),PL結構20外觀上呈現一板狀結構、不會遮蔽到LED晶片10之立面13,而PL結構20’外觀上呈現一帽狀結構。 Please refer to FIGS. 4A and 4B, which are schematic views of various types of light-emitting devices 4 according to a fourth preferred embodiment of the present invention. As shown in FIG. 4A, the light-emitting device 4 includes an LED chip 10, a PL structure 20', and a transparent package structure 70, wherein the PL structure 20' is different from the PL structure 20 in the foregoing embodiment (as shown in FIG. 1A). The PL structure 20 has a plate-like structure in appearance and does not cover the façade 13 of the LED chip 10, and the PL structure 20' exhibits a cap-like structure in appearance.

具體而言,PL結構20’包括一頂部201’、一立部202’及一側部203’,頂部201’設置於LED晶片10之上表面11上,而立部202’從頂部201’向下延伸、並遮蔽LED晶片10之立面13,且立部202’之底面可齊平於LED晶片10之下表面12;側部203’則是從立部202’向外地延伸。由於PL結構20’是由第一PL層21及第二PL層22構成,故頂部201’、立部202’及側部203’之每一者都是由第一PL層21及第二PL層22的一部分來構成。 Specifically, the PL structure 20' includes a top portion 201', a vertical portion 202', and a side portion 203'. The top portion 201' is disposed on the upper surface 11 of the LED wafer 10, and the vertical portion 202' is lowered from the top portion 201' The façade 13 of the LED wafer 10 is extended and shielded, and the bottom surface of the pedestal 202' is flush with the lower surface 12 of the LED wafer 10; the side 203' extends outwardly from the pedestal 202'. Since the PL structure 20' is composed of the first PL layer 21 and the second PL layer 22, each of the top 201', the vertical portion 202', and the side portion 203' is composed of the first PL layer 21 and the second PL. A portion of the layer 22 is constructed.

透明封裝結構70設置於PL結構20’上,且可覆蓋頂部201’之上表面201、立部202’之外側面及側部203’之上表面,然後透明封裝結構70之外側面可齊平於側部203’之側面203;於其他可能態樣中(圖未示),透明封裝結構70亦可覆蓋側部203’之外側面。透明封裝結構70可包含一透明高分子材料71,其較佳地可具有低水氣滲透率,以阻隔濕氣通過。 The transparent package structure 70 is disposed on the PL structure 20', and can cover the top surface 201 of the top portion 201', the outer side surface of the vertical portion 202' and the upper surface of the side portion 203', and then the outer side of the transparent package structure 70 can be flush On the side 203 of the side portion 203'; in other possible aspects (not shown), the transparent package structure 70 may also cover the outer side of the side portion 203'. The transparent package structure 70 can comprise a transparent polymeric material 71 that preferably has a low moisture vapor permeability to block the passage of moisture.

如第4B圖所示,PL結構20’可更包含一第三光致發光層(第三PL層)23,第三PL層23設置於第二PL層22下,換言之,第二PL層22夾置於第三PL層23及第一PL層21之間。第三PL層23包含一第三高分子材料231及混合於第三高分子材料231中之一非濕氣敏感之光致發光材料(非濕敏材料)232,兩者的的技術內容可參照第一PL層21的第一高分子材料211及非濕敏材料212的技術內容。 As shown in FIG. 4B, the PL structure 20' may further include a third photoluminescent layer (third PL layer) 23, and the third PL layer 23 is disposed under the second PL layer 22, in other words, the second PL layer 22 It is sandwiched between the third PL layer 23 and the first PL layer 21. The third PL layer 23 includes a third polymer material 231 and a non-moisture sensitive photoluminescence material (non-humidity sensitive material) 232 mixed in the third polymer material 231, and the technical contents of the two can be referred to The technical contents of the first polymer material 211 and the non-humidity material 212 of the first PL layer 21.

在製作上,較佳地可藉由先前提出的公開號US2010/0119839之美國專利申請案(對應於證書號I508331之臺灣專利)所揭露的方法在LED晶片10上依序形成第三PL層23、第二PL層22及第一PL層21,接著再以點膠、印刷或模造等方法形成透明封裝結構70,可完成發光裝置4。 In the production, the third PL layer 23 is sequentially formed on the LED wafer 10 by the method disclosed in the above-mentioned U.S. Patent Application Publication No. US 2010/0119839 (corresponding to Taiwan Patent No. I508331). The second PL layer 22 and the first PL layer 21 are then formed into a transparent package structure 70 by means of dispensing, printing or molding, and the light-emitting device 4 can be completed.

藉此,發光裝置4中,LED晶片10及PL結構20’所產生之光線 除了可朝上射出外,亦可側向地朝周圍射出,使得發光裝置4的光線照射範圍較廣。此外,第一PL層21、第三PL層23及透明封裝結構70皆可阻礙濕氣通過,減少濕氣接觸到第二PL層22的濕敏材料222。 Thereby, the light generated by the LED chip 10 and the PL structure 20' in the light-emitting device 4 In addition to being able to be emitted upwards, it can also be emitted laterally toward the surroundings, so that the light-emitting device 4 has a wide range of light illumination. In addition, the first PL layer 21, the third PL layer 23, and the transparent encapsulation structure 70 can block the passage of moisture, and reduce the moisture contacting the moisture sensitive material 222 of the second PL layer 22.

根據本發明所提出的濕氣阻隔之分層光致發光結構,亦可應用於使用濕氣敏感光致發光材料之支架型LED發光裝置。請參閱第5A圖及第5B圖,其為依據本發明第5較佳實施例的發光裝置5的各種型態的示意圖。如第5A圖所示,發光裝置5包含一藍光LED晶片(LED晶片)10’、一封裝結構80及一PL結構20,該LED晶片10’除了可為覆晶型晶片外,亦可為水平式晶片。 The layered photoluminescence structure of the moisture barrier according to the present invention can also be applied to a stent type LED light-emitting device using a moisture-sensitive photoluminescence material. Please refer to FIG. 5A and FIG. 5B, which are schematic views of various types of the light-emitting device 5 according to the fifth preferred embodiment of the present invention. As shown in FIG. 5A, the illuminating device 5 includes a blue LED chip (LED chip) 10', a package structure 80, and a PL structure 20. The LED chip 10' may be horizontal except for the flip chip. Wafer.

封裝結構80可包含一導線架81及一反射體82,該導線架81可包含一第一電極811及一第二電極812、且可由一金屬片經沖壓形成者,並且兩者相互電性隔離。反射體82部分地包含該導線架81,以使第一及第二電極811及812具有露出表面可供LED晶片10’的電極組14進行電性連接。第一及第二電極811及812的露出表面亦可供打線、其他裝置的電極(圖未示)之間的電性連接。 The package structure 80 can include a lead frame 81 and a reflector 82. The lead frame 81 can include a first electrode 811 and a second electrode 812, and can be formed by stamping a metal piece, and the two are electrically isolated from each other. . The reflector 82 partially includes the lead frame 81 such that the first and second electrodes 811 and 812 have exposed surfaces for electrically connecting the electrode groups 14 of the LED wafer 10'. The exposed surfaces of the first and second electrodes 811 and 812 are also electrically connectable between wires and electrodes (not shown) of other devices.

反射體82還從導線架81向上延伸以形成一圍牆結構(或稱反射杯),以使得反射體82包含一凹槽821。反射體82的材料組成可參照反射結構30(如第1A圖所示),即包含高分子材料及光散性微粒,故反射體82也可具有低水氣滲透率;反射體82亦可由包含一反射性樹脂之一材料所製成,反射性樹脂例如可為聚鄰苯二甲醯胺(polyphthalamide,即PPA)、聚對苯二甲酸環己烷二甲醇酯(Polycyclolexylene-di-methylene Terephthalate,即PCT)、熱固性環氧樹脂(Epoxy molding compound,即EMC)或矽膠樹 脂(Silicone molding compound,即SMC)。 The reflector 82 also extends upwardly from the leadframe 81 to form a wall structure (or reflector cup) such that the reflector 82 includes a recess 821. The material composition of the reflector 82 can be referred to the reflective structure 30 (as shown in FIG. 1A), that is, the polymer material and the light-scattering particles are included, so that the reflector 82 can also have a low water vapor permeability; the reflector 82 can also be included. It is made of a material of a reflective resin, for example, polyphthalamide (PPA) or polycyclolexylene-di-methylene Terephthalate (Polycyclolexylene-di-methylene Terephthalate). PCT), Epoxy molding compound (EMC) or silicone tree Silicone molding compound (SMC).

LED晶片10’設置於凹槽821內,且電性連接至第一及第二電極811及812;PL結構20設置於LED晶片10’上,使PL結構20之底面202直接接觸於LED晶片10’之上表面11(同第1A圖所示的LED晶片10與PL結構20的接觸方式),且也設置於凹槽821內。因此,PL結構20及LED晶片10’所產生之光線會被反射體82反射,僅能朝上方射出。於其他可能態樣中(即第5A圖所示者),封裝結構80可更包含一透明高分子材料83,其設置於PL結構20與LED晶片10’之間,使得兩者相分隔;如此,LED晶片10’之上表面11將有可能供打線連接。 The LED chip 10' is disposed in the recess 821 and electrically connected to the first and second electrodes 811 and 812. The PL structure 20 is disposed on the LED wafer 10' such that the bottom surface 202 of the PL structure 20 directly contacts the LED wafer 10. The upper surface 11 (the same manner as the LED wafer 10 and the PL structure 20 shown in FIG. 1A) is also disposed in the recess 821. Therefore, the light generated by the PL structure 20 and the LED chip 10' is reflected by the reflector 82 and can be emitted only upward. In other possible aspects (ie, as shown in FIG. 5A), the package structure 80 may further include a transparent polymer material 83 disposed between the PL structure 20 and the LED chip 10' such that the two are separated; The upper surface 11 of the LED wafer 10' will likely be connected by wire bonding.

在製作上,舉例而言,可先將LED晶片10’固晶接合至封裝結構80中,再藉由先前提出的公開號US2010/0119839之美國專利申請案(對應於證書號I508331之臺灣專利)所揭露的方法先形成PL結構20,再將其貼合於LED晶片10’上,使PL結構20之底面202直接接觸於LED晶片10’之上表面11;或在LED晶片10’之上表面11上形成透明高分子材料83,再將PL結構20貼合至透明高分子材料83上,形成不同態樣之發光裝置5。 In the fabrication, for example, the LED wafer 10' can be die bonded to the package structure 80, and the U.S. Patent Application No. US2010/0119839 (which corresponds to Taiwan Patent No. I508331). The disclosed method first forms the PL structure 20 and then attaches it to the LED wafer 10' such that the bottom surface 202 of the PL structure 20 directly contacts the upper surface 11 of the LED wafer 10'; or on the surface of the LED wafer 10' A transparent polymer material 83 is formed on the surface 11, and the PL structure 20 is bonded to the transparent polymer material 83 to form different light-emitting devices 5.

上述所揭露之發光裝置5與先前技術之支架型發光裝置(例如專利號US 2015/0270451之美國專利申請案)不同處在於:先前技術增設了一透光矽膠覆蓋層(silicone overlayer)於該支架型發光裝置之正面,以減少濕氣從外界穿透至內部的螢光材料層;而本發明所揭露之發光裝置5則採用包含非濕敏材料212之第一PL層21取代覆蓋層以提升濕氣阻隔能力,達到保護第二PL層22內濕敏材料222之目的,如此可不需採用更厚的矽膠覆蓋層,避免了增加發光裝置之整體尺寸,解決了先前技術之方案不利LED應 用於輕薄短小電子產品之缺點。 The light-emitting device 5 disclosed above is different from the prior art stent-type light-emitting device (for example, US Patent Application No. US 2015/0270451) in that the prior art adds a silicone overlayer to the support. The front side of the illuminating device is configured to reduce the penetration of moisture from the outside to the inner layer of the phosphor material; and the illuminating device 5 disclosed in the present invention replaces the covering layer with the first PL layer 21 including the non-moisture sensitive material 212 to enhance The moisture barrier capability achieves the purpose of protecting the moisture sensitive material 222 in the second PL layer 22, so that a thicker silicone coating layer is not needed, which avoids increasing the overall size of the light emitting device, and solves the disadvantages of the prior art. Used for shortcomings of thin and light electronic products.

如第5B圖所示,發光裝置5可包含一光透明濕氣阻隔層50,其可設置於PL結構20上,且可延伸設置於反射體82上。此外,PL結構20及/或透明高分子材料83亦可包含一吸溼材料242。 As shown in FIG. 5B, the light-emitting device 5 can include a light-transparent moisture barrier layer 50 that can be disposed on the PL structure 20 and can be extended on the reflector 82. In addition, the PL structure 20 and/or the transparent polymer material 83 may also include a moisture absorbing material 242.

綜合上述,本發明之較佳實施例所提出的發光裝置具有各種濕氣阻隔機制(例如PL結構、反射結構、光透明濕氣阻隔層、濕氣阻隔結構、吸濕層、吸濕結構、封裝結構等),以減少或避免濕氣從外界環境滲透至濕敏材料的可能性;此外,這些濕氣阻隔機制不會大幅增加發光裝置的尺寸及製造成本。 In summary, the light-emitting device proposed by the preferred embodiment of the present invention has various moisture blocking mechanisms (for example, PL structure, reflective structure, light transparent moisture barrier layer, moisture barrier structure, moisture absorbing layer, moisture absorbing structure, package) Structures, etc., to reduce or avoid the possibility of moisture permeating from the external environment to the moisture sensitive material; in addition, these moisture barrier mechanisms do not significantly increase the size and manufacturing cost of the light emitting device.

以上說明的實施例的技術內容並非用來限制本發明之保護範疇。本發明所屬技術領域中具有通常知識者可輕易完成之改變或均等性之安排均屬於本發明所主張之範圍,本發明之權利保護範圍應以申請專利範圍為準。 The technical content of the above-described embodiments is not intended to limit the scope of protection of the present invention. It is to be understood that the scope of the invention is to be construed as being limited by the scope of the invention.

1‧‧‧發光裝置 1‧‧‧Lighting device

10‧‧‧藍光LED晶片、LED晶片 10‧‧‧Blue LED chip, LED chip

11‧‧‧上表面 11‧‧‧ upper surface

12‧‧‧下表面 12‧‧‧ Lower surface

13‧‧‧立面 13‧‧‧Facade

14‧‧‧電極組 14‧‧‧Electrode group

20‧‧‧光致發光結構、PL結構 20‧‧‧Photoluminescent structure, PL structure

201‧‧‧頂面 201‧‧‧ top surface

202‧‧‧底面 202‧‧‧ bottom

203‧‧‧側面 203‧‧‧ side

21‧‧‧第一光致發光層、第一PL層 21‧‧‧First photoluminescent layer, first PL layer

211‧‧‧第一高分子材料 211‧‧‧First polymer material

212‧‧‧非濕氣敏感之光致發光材料、非濕敏材料 212‧‧‧ Non-moisture sensitive photoluminescent materials, non-moisture sensitive materials

22‧‧‧第二光致發光層、第二PL層 22‧‧‧Second photoluminescent layer, second PL layer

221‧‧‧第二高分子材料 221‧‧‧Second polymer material

222‧‧‧濕氣敏感之光致發光材料、濕敏材料 222‧‧‧ Moisture sensitive photoluminescent materials, moisture sensitive materials

30‧‧‧反射結構 30‧‧‧Reflective structure

31‧‧‧第三高分子材料 31‧‧‧ Third polymer material

32‧‧‧光學散射性微粒 32‧‧‧Optical scattering particles

Claims (28)

一種發光裝置,包含:一藍光LED晶片;一光致發光結構,設置於該藍光LED晶片上、且包括一第一光致發光層及一第二光致發光層,該第一光致發光層設置於該第二光致發光層上,該第一光致發光層包含一第一高分子材料及混合於該第一高分子材料中之一非濕氣敏感之光致發光材料,而該第二光致發光層包含一第二高分子材料及混合於該第二高分子材料中之一濕氣敏感之光致發光材料;以及一反射結構,圍繞該藍光LED晶片及該光致發光結構,該反射結構包含一第三高分子材料及混合於該第三高分材料中之一光學散射性微粒。 A light-emitting device comprising: a blue LED chip; a photoluminescent structure disposed on the blue LED chip and comprising a first photoluminescent layer and a second photoluminescent layer, the first photoluminescent layer And disposed on the second photoluminescent layer, the first photoluminescent layer comprises a first polymer material and a non-moisture sensitive photoluminescent material mixed in the first polymer material, and the The second photoluminescent layer comprises a second polymer material and a moisture sensitive photoluminescent material mixed in the second polymer material; and a reflective structure surrounding the blue LED chip and the photoluminescent structure, The reflective structure includes a third polymer material and one of the third high-division material. 如請求項1所述的發光裝置,其中,該非濕氣敏感之光致發光材料在該第一光致發光層中的一重量百分比不小於50%。 The illuminating device of claim 1, wherein the non-moisture-sensitive photoluminescent material is not less than 50% by weight in the first photoluminescent layer. 如請求項1所述的發光裝置,其中,該非濕氣敏感之光致發光材料的粒徑中位值(D50)不大於30微米。 The light-emitting device of claim 1, wherein the non-moisture-sensitive photoluminescent material has a median diameter (D50) of not more than 30 μm. 如請求項1所述的發光裝置,其中,該光學散射性微粒在該反射結構中的一重量百分比不小於30%。 The light-emitting device of claim 1, wherein the optically scattering fine particles are not less than 30% by weight in the reflective structure. 如請求項1所述的發光裝置,其中,該第一高分子材料及該第三高分子材料之水氣滲透率(WVTR)不大於10g/m2/day。 The light-emitting device according to claim 1, wherein the first polymer material and the third polymer material have a water vapor permeability (WVTR) of not more than 10 g/m 2 /day. 如請求項1所述的發光裝置,其中,該非濕氣敏感之光致發光材料更為一無機螢光材料,而該濕氣敏感之光致發光材料更為一含易被氧化 之活性元素(activator)的螢光材料或一量子點光致發光材料。 The illuminating device of claim 1, wherein the non-moisture-sensitive photoluminescent material is further an inorganic fluorescent material, and the moisture-sensitive photoluminescent material is more susceptible to oxidation. A fluorescent material of an activator or a quantum dot photoluminescent material. 如請求項1所述的發光裝置,其中,該非濕氣敏感之光致發光材料包含一氮氧化物綠色螢光材料,該氮氧化物綠色螢光材料更為β-SiAlON;而該濕氣敏感之光致發光材料包含一氟化物紅色螢光材料。 The illuminating device of claim 1, wherein the non-moisture-sensitive photoluminescent material comprises an oxynitride green fluorescent material, the oxynitride green fluorescent material is more β-SiAlON; and the moisture is sensitive The photoluminescent material comprises a fluoride red fluorescent material. 如請求項1至7任一項所述的發光裝置,更包含一光透明濕氣阻隔層,該光透明濕氣阻隔層設置於該光致發光結構上。 The light-emitting device according to any one of claims 1 to 7, further comprising a light-transparent moisture barrier layer, wherein the light-transparent moisture barrier layer is disposed on the photoluminescent structure. 如請求項8所述的發光裝置,其中,該光透明濕氣阻隔層包含一透明無機層或一低水氣滲透率高分子層。 The light emitting device of claim 8, wherein the light transparent moisture barrier layer comprises a transparent inorganic layer or a low water vapor permeability polymer layer. 如請求項8所述的發光裝置,其中,該光透明濕氣阻隔層更設置於該反射結構上。 The light-emitting device of claim 8, wherein the light-transparent moisture barrier layer is further disposed on the reflective structure. 如請求項1至7任一項所述的發光裝置,其中,該光致發光結構更包含一透明之吸濕層(getter layer),該吸濕層夾置於該第一光致發光層及該第二光致發光層之間。 The illuminating device of any one of claims 1 to 7, wherein the photoluminescent structure further comprises a transparent getter layer, the moisture absorbing layer being sandwiched between the first photoluminescent layer and Between the second photoluminescent layers. 如請求項1至7任一項所述的發光裝置,其中,該第一光致發光層及/或該第二光致發光層更包含一吸溼材料(getter material),該吸溼材料混合於該第一高分子材料及/或該第二高分子材料中。 The illuminating device of any one of claims 1 to 7, wherein the first photoluminescent layer and/or the second photoluminescent layer further comprises a getter material, the moisture absorbing material is mixed In the first polymer material and/or the second polymer material. 如請求項1至7任一項所述的發光裝置,其中,該反射結構更包含一吸溼材料,該吸溼材料混合於該第三高分子材料中。 The light-emitting device according to any one of claims 1 to 7, wherein the reflective structure further comprises a moisture absorbing material mixed in the third polymer material. 如請求項1至7任一項所述的發光裝置,更包含一濕氣阻隔結構,該濕氣阻隔結構圍繞該反射結構,該濕氣阻隔結構包含一第四高分子材料,該第四高分材料之水氣滲透率不大於10g/m2/day。 The light-emitting device according to any one of claims 1 to 7, further comprising a moisture barrier structure surrounding the reflective structure, the moisture barrier structure comprising a fourth polymer material, the fourth high The water vapor permeability of the sub-material is not more than 10 g/m 2 /day. 如請求項14所述的發光裝置,該濕氣阻隔結構更包含一光學散射性 微粒,該光學散射性微粒混合於該第四高分材料之中,且該光學散射性微粒在該濕氣阻隔結構中的一重量百分比不小於10%。 The light-emitting device of claim 14, the moisture barrier structure further comprising an optical scattering property And the optical scattering particles are mixed in the fourth high-division material, and the optical scattering particles are not less than 10% by weight in the moisture barrier structure. 如請求項1至7任一項所述的發光裝置,更包含一基板,而該藍光LED晶片及該反射結構設置於該基板上。 The illuminating device of any one of claims 1 to 7, further comprising a substrate, and the blue LED chip and the reflective structure are disposed on the substrate. 一種發光裝置,包含:一藍光LED晶片;一光致發光結構,設置於該藍光LED晶片上、且包含一頂部、一從該頂部向下延伸之立部、及一從該立部向外延伸之側部,該光致發光結構更包含一第一光致發光層及一第二光致發光層,該第一光致發光層設置於該第二光致發光層上;以及一透明封裝結構,設置於該光致發光結構上;其中,該第一光致發光層包含一第一高分子材料及混合於該第一高分子材料中之一非濕氣敏感之光致發光材料,而該第二光致發光層包含一第二高分子材料及混合於該第二高分子材料中之一濕氣敏感之光致發光材料,且該透明封裝結構包含一透明高分子材料。 A light emitting device comprising: a blue LED chip; a photoluminescent structure disposed on the blue LED chip and comprising a top portion, a vertical portion extending downward from the top portion, and an outward extending portion from the vertical portion The photoluminescent structure further includes a first photoluminescent layer and a second photoluminescent layer, the first photoluminescent layer is disposed on the second photoluminescent layer; and a transparent package structure Provided on the photoluminescent structure; wherein the first photoluminescent layer comprises a first polymer material and a non-moisture sensitive photoluminescent material mixed in the first polymer material, and the The second photoluminescent layer comprises a second polymer material and a moisture sensitive photoluminescent material mixed in the second polymer material, and the transparent encapsulating structure comprises a transparent polymer material. 如請求項17所述的發光裝置,其中,該光致發光結構更包含一第三光致發光層,該第二光致發光層夾置於該第三光致發光層及該第一光致發光層之間;該第三光致發光層包含一第三高分子材料及混合於該第三高分子材料中之一非濕氣敏感之光致發光材料。 The illuminating device of claim 17, wherein the photoluminescent structure further comprises a third photoluminescent layer, the second photoluminescent layer being interposed between the third photoluminescent layer and the first photo-induced layer The third photoluminescent layer comprises a third polymer material and a non-moisture sensitive photoluminescent material mixed in the third polymer material. 如請求項17所述的發光裝置,其中,該非濕氣敏感之光致發光材料在該第一光致發光層或該第三光致發光層中的一重量百分比不小於50%。 The illuminating device of claim 17, wherein the non-moisture sensitive photoluminescent material has a weight percentage of not less than 50% in the first photoluminescent layer or the third photoluminescent layer. 如請求項17所述的發光裝置,其中,該非濕氣敏感之光致發光材料的粒徑中位值不大於30微米。 The illuminating device of claim 17, wherein the non-moisture sensitive photoluminescent material has a median particle size of no greater than 30 microns. 如請求項17所述的發光裝置,其中,該透明封裝結構所包含之該透明高分子材料的水氣滲透率不大於10g/m2/day。 The light-emitting device according to claim 17, wherein the transparent polymer material contained in the transparent package has a water vapor permeability of not more than 10 g/m 2 /day. 如請求項17至21任一項所述的發光裝置,更包含一基板,而該藍光LED晶片及該光致發光結構設置於該基板上。 The illuminating device of any one of claims 17 to 21, further comprising a substrate, and the blue LED chip and the photoluminescent structure are disposed on the substrate. 一種發光裝置,包含:一藍光LED晶片;一封裝結構,包含一導線架及一反射體,該導線架包含一第一電極及一第二電極,該反射體係部分地包覆該導線架且包含一凹槽,該藍光LED晶片設置於該凹槽內、並電性連接至該導線架之該第一電極及該第二電極;以及一光致發光結構,設置於該藍光LED晶片上及該凹槽內、且包括一第一光致發光層及一第二光致發光層,該第一光致發光層設置於該第二光致發光層上,該第一光致發光層包含一第一高分子材料及混合於該第一高分子材料中之一非濕氣敏感之光致發光材料,而該第二光致發光層包含一第二高分子材料及混合於該第二高分子材料中之一濕氣敏感之光致發光材料。 A light-emitting device comprising: a blue LED chip; a package structure comprising a lead frame and a reflector, the lead frame comprising a first electrode and a second electrode, the reflective system partially covering the lead frame and including a recess, the blue LED chip is disposed in the recess and electrically connected to the first electrode and the second electrode of the lead frame; and a photoluminescent structure disposed on the blue LED chip and the a first photoluminescent layer and a second photoluminescent layer disposed in the recess, the first photoluminescent layer being disposed on the second photoluminescent layer, the first photoluminescent layer comprising a first a polymer material and a non-moisture sensitive photoluminescent material mixed in the first polymer material, and the second photoluminescent layer comprises a second polymer material and mixed with the second polymer material One of the moisture sensitive photoluminescent materials. 如請求項23所述的發光裝置,其中,該非濕氣敏感之光致發光材料在該第一光致發光層中的一重量百分比不小於50%。 The illuminating device of claim 23, wherein the non-moisture sensitive photoluminescent material has a weight percentage of not less than 50% in the first photoluminescent layer. 如請求項23所述的發光裝置,其中,該非濕氣敏感之光致發光材料的粒徑中位值不大於30微米。 The illuminating device of claim 23, wherein the non-moisture sensitive photoluminescent material has a median particle size of no greater than 30 microns. 如請求項23所述的發光裝置,其中,該封裝結構更包含一透明高分子材料,該透明高分子材料設置於該光致發光結構與該藍光LED晶片之間。 The light emitting device of claim 23, wherein the package structure further comprises a transparent polymer material disposed between the photoluminescent structure and the blue LED chip. 如請求項23所述的發光裝置,更包含一光透明濕氣阻隔層,該光透明濕氣阻隔層設置於該光致發光結構上。 The illuminating device of claim 23, further comprising a light transparent moisture barrier layer disposed on the photoluminescent structure. 如請求項23或26所述的發光裝置,其中,該光致發光結構及/或該透明高分子材料更包含一吸溼材料。 The illuminating device of claim 23 or 26, wherein the photoluminescent structure and/or the transparent polymer material further comprises a moisture absorbing material.
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