JP2003162229A - Filter for image display device, image display device and manufacturing method for the device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an image display device having superior screen display quality and visibility, its manufacturing method and a filter for the device which is used to accomplish the above objectives. <P>SOLUTION: An image display device filter 1 is arranged on the front of a display surface 11 of the image display device which is provided with light emitting diodes 17, 18 and 19 that have a plurality of light emitting colors. The filter 1 is provided with a light diffusing section 16 which is arranged on the front of the surface 11 of the device with a separation equivalent to a prescribed distance to diffuse the emitted light beams from the diodes 17, 18 and 19 and optically transmissive sections 2, 3 and 4 which are arranged on the front of the section 16 to pass the light beams of the wavelength range of the corresponding light emitting color among the plurality of light emitting colors and to intercept light beams having other wavelength ranges. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a color LE including a plurality of light emitting diodes (LED: Light Emitting Diode).
The present invention relates to an image display device filter used for a D display and the like, an image display device, and a manufacturing method thereof.

[0002]

2. Description of the Related Art In recent years, due to the practical application of blue LEDs with improved brightness, LEs of three primary colors of red, green and blue have been emitted.
Full color LE with D arranged in a matrix
D displays have been proposed. When a display device using such an LED is configured, the LED, which is a light source, is a point light source, and the size of the LED is much smaller than the pixel size. Therefore, it is easy to perceive an image as a collection of light spots. In other words, the halftone dot recognition distance becomes large. As a method of correcting the halftone dot recognition distance, there is a method of using a diffusion film or the like for diffusing light so as to make the luminance uniform in the pixel.

[0003]

However, when such a diffusion film or the like is used, the brightness in the pixel is adjusted, but external light is also diffusely reflected and the contrast is lowered. There is a problem in that the hue is changed due to the reflection of light generated by the above-mentioned phenomenon, resulting in uneven color.

Further, it is difficult to manufacture LEDs with uniform colors, and even when LEDs formed on the same wafer are compared with each other, there is unevenness in the emission color. Therefore, when a display device is configured by arranging a plurality of LEDs, color unevenness occurs in the screen due to the color unevenness of the emission color of the LEDs. And, when a display device is configured using LEDs, it is very difficult to adjust the colors of all the LEDs because the usage amount of the LEDs is on the level of several millions, which is very time-consuming. There is a problem of cost.

Further, when the display device is constructed by using LEDs, the peripheral portion of the LEDs, that is, each LED and LE.
At the boundary with D, there is a problem that external light is reflected and the contrast is reduced due to this reflected light.

Therefore, an LED display device which is excellent in screen display quality and visibility, in which the dot recognition distance is prevented from increasing and the color unevenness on the entire display surface is prevented, and further the deterioration of the contrast is prevented, is still available. The reality is that it has not been realized.

Therefore, the present invention was devised in view of the above-mentioned conventional circumstances, and an image display device excellent in screen display quality and visibility, a method of manufacturing the same, and an image display which can realize the same. An object is to provide a filter for a device.

[0008]

An image display device filter according to the present invention, which achieves the above object, is arranged on the front surface of the display surface of an image display device including light emitting diodes of a plurality of emission colors. An image display device filter,
A light diffusing section which is arranged on the front surface of the display surface of the image display device at a predetermined distance from the display surface and diffuses the light emitted from the light emitting diode, and is arranged on the front surface of the light diffusing section and has a plurality of emission colors. A light transmitting portion that transmits light in the wavelength range of the corresponding emission color and blocks light in other wavelength ranges is provided.

In the image display device filter according to the present invention configured as described above, the light emitted from the light emitting diode of the image display device is transmitted through the light diffusing portion and then through the light transmitting portion. It is said that.

With this configuration, in the image display device filter, the light emitted from each light emitting diode is diffused by the light diffusing portion and is incident on the light transmitting portion in a state where the spot is enlarged. Therefore, the spot diameter of the light emitted from each light emitting diode is large when it is displayed on the screen.

Further, in this image display device filter,
In the light emitted from each light emitting diode, even if color unevenness occurs between the light emitting diodes by passing through the light diffusing portion, it is corrected by the light transmitting portion and the color tone of the entire display surface is made uniform. .

In this image display device filter, a large amount of external light is absorbed when transmitting through the light transmitting portion,
Since the luminance of the reflected light of the external light on the display surface is weakened, the influence of the external light such as the decrease in contrast is prevented.

Further, an image display device according to the present invention which achieves the above object is an image display device having a display surface constituted by light emitting diodes of a plurality of emission colors, wherein an image is formed on the front surface of the display surface. The image display device filter includes a display device filter, and the image display device filter includes a light diffusing section which is arranged on the front surface of the display surface of the image display device at a predetermined distance from the display surface and which diffuses light emitted from the light emitting diode. It is characterized in that it is provided on the front surface of the diffusing section and has a light transmitting section which transmits light in a wavelength range of a corresponding emission color among a plurality of emission colors and blocks light in other wavelength ranges.

In the image display device according to the present invention configured as described above, the light emitted from the light emitting diode of the image display device passes through the light diffusing portion of the image display device filter, and then passes through the light transmitting portion. It is configured to be transparent.

With this structure, in this image display device, the light emitted from each light emitting diode is diffused by the light diffusing portion and is incident on the light transmitting portion in a state where the spot is enlarged. The spot diameter of the light emitted from each light emitting diode is large when it is displayed on the screen.

Further, in this image display device, even when the light emitted from each light emitting diode is transmitted through the light diffusing portion to cause color unevenness between the light emitting diodes, the light transmitting portion corrects the unevenness and displays it. The color tone of the entire surface is made uniform.

In this image display device, a large amount of external light is absorbed when it is transmitted through the light transmitting portion, and the brightness of the reflected light on the display surface of the external light is weakened. The effect of is prevented.

The method of manufacturing an image display device according to the present invention, which achieves the above object, is also provided with an image display device including a display surface including light emitting diodes of a plurality of emission colors and a filter for the image display device. Of the light emitting diode for diffusing the light emitted from the light emitting diode, and transmits the light in the wavelength range of the corresponding emission color among the plurality of emission colors while blocking the light in other wavelength ranges. Forming a filter for an image display device by arranging a light transmitting portion, and arranging the filter for an image display device on the front surface of the display surface so that the display surface and the light diffusing portion are opposed to each other by a predetermined distance. It is characterized by.

In the image display device manufactured by the method for manufacturing an image display device according to the present invention as described above, the light emitted from the light emitting diode of the image display device is transmitted through the light diffusion portion of the image display device filter, After that, it has a configuration of transmitting through the light transmitting portion.

Therefore, in the method of manufacturing the image display device according to the present invention, the light emitted from each light emitting diode has a large spot diameter when displaying on the screen, and the color tone of the entire display surface is uniform. In addition, an image display device in which the influence of external light such as a decrease in contrast is prevented is manufactured.

[0021]

BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of a filter for an image display device and an image display device according to the present invention will be described below in detail with reference to the drawings.

FIG. 1 is a sectional view showing a filter for a light emitting diode display device (hereinafter sometimes referred to as a filter for an LED display device) 1 to which the present invention is applied. The LED display device filter 1 to which the present invention is applied is red (R),
A dot matrix for full color display having a display surface including light emitting diodes (hereinafter, also referred to as LEDs) of three emission colors of green (G) and blue (B), that is, red LEDs, green LEDs and blue LEDs. Is a light-emitting diode display device filter 1 for a light-emitting diode display device of the type, and is arranged on the display surface 11 of the dot-matrix light-emitting diode display device at a predetermined distance. In the light emitting diode display device to which the present invention is applied, other configurations (not shown) may be the same as those of the conventionally known light emitting diode display device, and are not particularly limited.

The light emitting diode display device filter 1 comprises:
As shown in FIG. 1, the color filter 6 on the transparent substrate 8,
A diffusion film 7 which is a light diffusion portion that diffuses the light emitted from the light emitting diode is laminated in this order, and as shown in FIG. 2, the LED 14 on the display surface 11 of the light emitting diode display device, which will be described later, Adhesive 2 with spacers 21 so that 15, 16 and diffusion film 7 face each other
It is fixed to the light emitting diode display device by 2. Here, as the material of the transparent substrate 8, glass, resin, or the like can be used. The material of the spacer 21 is not particularly limited, and various materials can be used. The material of the adhesive material 22 is not particularly limited, and the transparent substrate 8, the flat substrate 12 and the spacer 21 are used.
Various substances can be used as long as they do not react with. Further, it is preferable that a light antireflection film is provided on the surface of the transparent substrate 8.

The color filter 6, as shown in FIG.
The red light transmission part 2, the green light transmission part 3, and the blue light transmission part 4, which are dedicated light transmission parts corresponding to each emission color of the ED, are provided, and the light transmission part corresponds to the LEDs of each emission color. It is arranged so that it will be in the position. That is, the red LED 1
The red light emitted from 4 is transmitted to the red light transmitting portion 2 and the green LED
The green light emitted from 15 enters the green light transmitting portion 3, and
The transmissive portions are arranged so that the blue light emitted from the blue LED 16 enters the blue light transmissive portion 4. Here, each light transmitting portion has a transmission characteristic of transmitting light of a specific wavelength band with a predetermined transmittance and blocking light of another wavelength band. That is, the red light transmitting portion 2 has a transmission characteristic of transmitting light in the red wavelength region with a predetermined transmittance and blocking light in other wavelength regions, and the green light transmitting portion 3
Has a transmission characteristic of transmitting light in the green wavelength range with a predetermined transmittance and blocking light in other wavelength ranges, and
The blue light transmitting portion 4 has a transmission characteristic of transmitting light in the blue wavelength region with a predetermined transmittance and blocking light in other wavelength regions. The red light transmitting portion 2, the green light transmitting portion 3 and the blue light transmitting portion 4 can be formed on a transparent substrate by using a printing method such as photo printing, screen printing, offset printing, or the like. . Therefore, in the light emitting diode display device filter 1,
Since the light transmitting portion of the color filter can be formed by the simple and inexpensive means as described above, it can be manufactured at low cost.

As shown in FIG. 3, the color filter 6 has a peripheral portion of each light transmitting portion, that is, a light transmitting portion, on the front surface side thereof, that is, on the main surface opposite to the side where the diffusion film 7 is arranged. A boundary portion between the light transmitting portion and the light transmitting portion serves as a light absorbing member. The color of the light absorbing member can be black, for example.

The display surface 11 of the light emitting diode display device is
As shown in FIG. 4, the electrode 13 is formed on the flat substrate 12, and the red LED 14 and the green LED 15 are formed on the electrode 13.
And the blue LEDs 16 are arranged in a predetermined pattern with a predetermined interval, and each LED has a peripheral portion, that is, LE.
A display surface is formed by forming a light reflection preventing film 17 at the boundary between D and the LED. Here, as the material of the flat substrate 13, glass, metal, resin or the like can be used. Moreover, instead of the light reflection preventing film 17, a light absorbing film may be formed in the peripheral portion of each LED, that is, in the boundary portion between the LEDs.

As the red LED 14, the green LED 15, and the blue LED 16, for example, a crystal layer having an S plane inclined with respect to the main surface of the substrate or a plane substantially equivalent to the S plane is formed on the substrate. And an LED formed by forming a first conductivity type layer, an active layer, and a second conductivity type layer extending in a plane parallel to the S-plane or a plane substantially equivalent to the S-plane on the crystal layer. Can be used.

The substrate used for this LED is S described later.
There is no particular limitation as long as it can form a crystal layer having a plane or a plane equivalent to its S plane, and various types can be used. For example, the substrate that can be used is
Sapphire (including Al ₂ O ₃ , A surface, R surface, and C surface)
SiC (including 6H, 4H, 3C) GaN, Si, Z
nS, ZnO, AlN, LiMgO, GaAs, MgA
A substrate made of 1 ₂ O ₄ , InAlGaN, or the like, preferably a hexagonal crystal substrate or a cubic crystal substrate made of these materials, and more preferably a hexagonal crystal substrate.
For example, when a sapphire substrate is used, it is possible to use a sapphire substrate having a C-plane as the main surface, which is often used when growing a gallium nitride (GaN) -based compound semiconductor material. In this case, the C plane as the main surface of the substrate includes a plane orientation inclined in the range of 5 to 6 degrees.

The crystal layer formed on this substrate has an S plane inclined with respect to the main surface of the substrate or a plane substantially equivalent to the S plane. The crystal layer is a material layer capable of forming a light emitting region including a first conductivity type layer, an active layer, and a second conductivity type layer on a plane parallel to an S plane or a plane substantially equivalent to the S plane described later. There is no particular limitation as long as it is sufficient, but it is preferable that it has a wurtzite crystal structure. As such a crystal layer, for example, a group III compound semiconductor or a BeMgZnCdS compound semiconductor can be used, and further, gallium nitride (GaN) compound semiconductor, aluminum nitride (AlN) compound semiconductor, indium nitride (InN). A compound semiconductor, an indium gallium nitride (InGaN) compound semiconductor, and an aluminum gallium nitride (AlGaN) compound semiconductor can be preferably formed, and a gallium nitride compound semiconductor is particularly preferable. InGaN, AlGaN, Ga
N and the like do not necessarily mean a nitride semiconductor having only a ternary mixed crystal and only a binary mixed crystal.
Needless to say, even if a trace amount of Al and other impurities are contained within a range that does not change the action of nGaN, it is within the scope of the present invention. Further, the surface substantially equivalent to the S surface is
It includes a plane orientation tilted in the range of 5 to 6 degrees with respect to the S plane.

As a method for growing this crystal layer, various vapor phase growth methods can be mentioned, for example, a metal organic compound vapor phase growth method (MOCVD (MOVPE) method) and a molecular beam epitaxy method (MBE method). A vapor phase growth method, a hydride vapor phase growth method (HVPE method), or the like can be used. Among them, according to the MOVPE method, a material having good crystallinity can be obtained quickly. In the MOVPE method, TMG (trimethylgallium) and TEG (triethylgallium) as Ga sources, TMA (trimethylaluminum) and TEA (triethylaluminum) as Al sources,
Alkyl metal compounds such as TMI (trimethylindium) and TEI (triethylindium) are often used as the In source, and gases such as ammonia and hydrazine are used as the nitrogen source. As the impurity source, silane gas is used for Si, germane gas is used for Ge, Cp2Mg (cyclopentadienyl magnesium) is used for Mg, and DEZ (diethyl zinc) is used for Zn. In the MOCVD method, these gases are supplied to the surface of the substrate heated to, for example, 600 ° C. or higher to decompose the gas, thereby reducing the In
The AlGaN compound semiconductor can be epitaxially grown.

Prior to the formation of the crystal layer, it is preferable to form a base growth layer on the substrate. This undergrowth layer consists of, for example, a gallium nitride layer or an aluminum nitride layer, and the undergrowth layer consists of a combination of a low temperature buffer layer and a high temperature buffer layer or a combination of a buffer layer and a crystal seed layer that functions as a crystal seed. May be Like the crystal layer, this undergrowth layer can be formed by various vapor phase growth methods,
For example, a vapor phase growth method such as a metal organic compound vapor phase growth method (MOCVD method), a molecular beam epitaxy method (MBE method), or a hydride vapor phase epitaxy method (HVPE method) can be used. When the growth of the crystal layer is started from the low temperature buffer layer, polycrystals are easily deposited on the mask, which becomes a problem. Therefore, by including a crystal seed layer and then growing a surface different from the substrate thereon, a crystal with better crystallinity can be grown. Also, in order to perform crystal growth using selective growth, it is necessary to form from a buffer layer if there is no crystal seed layer.
If selective growth is performed from the buffer layer, growth is likely to occur in a portion where growth is obstructed and growth does not have to occur. Therefore, by using the crystal seed layer, the crystal can be grown with good selectivity in the region where the growth is required. The buffer layer also has the purpose of alleviating the lattice mismatch between the substrate and the nitride semiconductor. Therefore, the buffer layer may not be formed when a substrate having a lattice constant close to that of the nitride semiconductor or a substrate having the same lattice constant is used. For example, a buffer layer may be provided on SiC without keeping AlN at a low temperature, and AlN and GaN may be grown as a buffer layer on a Si substrate without being kept at a low temperature. Nevertheless, good-quality GaN can be formed. . Further, the structure may be such that no buffer layer is provided, and a GaN substrate may be used.

Then, a selective growth method can be used to form the S-plane or a plane substantially equivalent to the S-plane. The S-plane is a stable plane that can be seen when selectively grown on the C + plane, is a plane that is relatively easy to obtain, and has a hexagonal plane index of (1-101). Similar to the presence of the C + and C− faces in the C face, the S + face and the S− face are present in the S face, but in the present specification, unless otherwise specified,
The S + plane is grown on the C + plane GaN, and this is described as the S plane. Regarding the S surface, the S + surface is the stable surface. The surface index of the C + surface is (0001).
Regarding the S-plane, when the crystal layer is made of a gallium nitride-based compound semiconductor as described above, the number of bonds from Ga to N is 2 or 3 on the S-plane, which is next to the C-plane.
Here, since the C-plane cannot be practically obtained on the C + plane, the number of bonds on the S-plane becomes the largest. For example, when a nitride is grown on a sapphire substrate having a C-plane as the main surface, the surface of the wurtzite type nitride is generally the C + plane, but the S-plane can be formed by using selective growth. , N that tends to be easily detached on a plane parallel to the C plane
In contrast to Ga, one bond is bonded from Ga, while at the inclined S surface, at least one pound is bonded. Therefore, the V / III ratio is effectively increased, which is advantageous for improving the crystallinity of the laminated structure. Further, when grown in a direction different from that of the substrate, dislocations extending upward from the substrate may be bent, which is also advantageous in reducing defects.

In this light emitting diode, the crystal layer has a structure having at least the S plane or a plane substantially equivalent to the S plane, and in particular, the crystal layer is substantially the S plane or the S plane. The equivalent planes may each have a structure of forming a substantially hexagonal pyramid-shaped slope, or the S-plane or a surface substantially equivalent to the S-plane may form a substantially hexagonal pyramid-shaped slope, respectively. The surface or a surface substantially equivalent to the C surface may be a structure forming the upper flat surface portion of the substantially hexagonal pyramid shape, that is, a so-called substantially hexagonal pyramid shape. The substantially hexagonal pyramid shape and the substantially hexagonal pyramid shape do not need to be exactly hexagonal pyramids, and include those in which some of the faces disappear. Also,
The ridgeline between the crystal planes of the crystal layer does not necessarily have to be a straight line. Further, the substantially hexagonal pyramid shape or the substantially hexagonal pyramid shape may be a linearly extended shape.

As a specific selective growth method, such selective growth is carried out by selectively removing a part of the underlayer growth layer, or alternatively, selectively growing on the underlayer growth layer. Alternatively, the opening portion of the mask layer formed before the formation of the underlying growth layer is utilized. For example, when the underlying growth layer is composed of a buffer layer and a crystal seed layer, the crystal seed layer on the buffer layer is subdivided into small regions of about 10 μm diameter which are scattered, and S-plane or the like is formed by crystal growth from each portion. It is possible to form a crystal layer having For example, the subdivided crystal seed layers can be arranged so as to be separated with a margin for separation as a light-emitting element, and the individual small regions can be strip-shaped, lattice-shaped, circular-shaped, square-shaped, The shape may be a hexagonal shape, a triangular shape, a rectangular shape, a rhombic shape, or a modified shape thereof.
Selective growth is also possible by forming a mask layer on the underlying growth layer and selectively opening the mask layer to form a window region. The mask layer can be composed of, for example, a silicon oxide layer or a silicon nitride layer. When the above-described substantially hexagonal truncated pyramid shape or substantially hexagonal pyramid shape is a linearly extended shape, a pyramidal frustum or pyramid shape in which one direction is the longitudinal direction makes the window region of the mask layer band-shaped. Alternatively, the crystal seed layer may be formed into a band shape.

The window area of the mask layer is made 10 μm by selective growth.
By making a circle of about m (or a hexagon of which sides are 1-100 directions, or a hexagon of which sides are 11-20 directions), it is possible to easily fabricate a selective growth region which is about twice that size. Also, if the S-plane is in a different direction from the substrate, the effect of bending dislocations,
Also, since it has an effect of shielding dislocations, it is also useful for reducing dislocation density.

In the experiment conducted by the present inventors, when the hexagonal truncated pyramid shape grown by using cathode luminescence is observed, the crystal of the S plane is of good quality and the luminous efficiency is higher than that of the C + plane. Has been shown. Especially I
Since the growth temperature of the nGaN active layer is 700 to 800 ° C., the decomposition efficiency of ammonia is low and more N species are required. Also, when the surface was observed with an AFM, the steps were aligned and a surface suitable for incorporation of InGaN was observed. Furthermore, it is known that the growth surface of the Mg-doped layer generally has a poor surface condition at the AFM level, but the growth of the S-plane also causes the Mg-doped layer to grow in a good surface condition and the doping conditions are considerably different. . Further, when microphotoluminescence mapping is performed, it is possible to measure with a resolution of about 0.5-1 μm, but in a normal method grown on the C + plane, there is unevenness of about 1 μm pitch,
Uniform results were obtained for the samples obtained by S-plane by selective growth. In addition, the flatness of the slope viewed by SEM is smoother than that of the C + surface.

In the case of selective growth using the selective growth mask, there is no lateral growth when growing only on the selective mask opening, so lateral growth is performed using microchannel epitaxy. It is possible to make the shape larger than the window region. It is known that the lateral growth using such microchannel epitaxy makes it easier to avoid threading dislocations and reduces dislocations. In addition, such lateral growth also increases the light emitting region, which makes it possible to make the current uniform, avoid current concentration, and reduce the current density.

In this light emitting diode, a first conductivity type layer, an active layer, and a second conductivity type layer extending in a plane parallel to an S plane or a plane substantially equivalent to the S plane are formed in a crystal layer. To do. The first conductivity type is a p-type or n-type cladding layer, and the second conductivity type is the opposite conductivity type. For example, when the crystal layer forming the S-plane is composed of a silicon-doped gallium nitride-based compound semiconductor layer, the n-type cladding layer is composed of a silicon-doped gallium-nitride-based compound semiconductor layer, and an InGaN layer is formed thereon as an active layer. And a magnesium-doped gallium nitride-based compound semiconductor layer is further formed thereon as a p-type clad layer to form a double hetero structure. It is also possible to have a structure in which the InGaN layer which is the active layer is sandwiched between AlGaN layers. The active layer may be composed of a single bulk active layer, but a quantum well having a single quantum well (SQW) structure, a double quantum well (DQW) structure, a multiple quantum well (MQW) structure, or the like. The structure may be formed. A barrier layer is additionally used in the quantum well structure for the purpose of separating the quantum well. When the active layer is an InGaN layer, the structure is particularly easy to manufacture in the manufacturing process, and the light emitting characteristics of the device can be improved. Furthermore, this InGaN layer is particularly easy to crystallize and has good crystallinity when grown on the S-plane, which has a structure in which nitrogen atoms are hard to be desorbed, and the luminous efficiency can be improved. Note that a nitride semiconductor has a property of becoming n-type even if it is not doped due to nitrogen vacancies formed in the crystal. However, by doping donor impurities such as Si, Ge, and Se during crystal growth, It can be a preferred n-type. In order to make the nitride semiconductor p-type, Mg, Zn, C, Be, Ca, B in the crystal
Although it can be obtained by doping an acceptor impurity such as a, in order to obtain a p-layer having a high carrier concentration, after doping the acceptor impurity, annealing is performed at 400 ° C. or higher in an inert gas atmosphere such as nitrogen or argon. However, there is also a method of activation by electron beam irradiation or the like, and a method of activation by microwave irradiation, light irradiation or the like.

The first-conductivity-type layer, the active layer, and the second-conductivity-type layer extend in a plane parallel to the S-plane or a plane substantially equivalent to the S-plane. The inward extension can be easily performed by continuing the crystal growth where the S-plane or the like is formed. In the case where the crystal layer has a substantially hexagonal pyramid shape or a substantially hexagonal pyramid trapezoidal shape and each inclined surface is an S surface,
The light emitting region including the first conductivity type layer, the active layer, and the second conductivity type layer can be formed on all or part of the S-plane.
In the case of the substantially hexagonal truncated pyramid shape, the first conductivity type layer, the active layer, and the second conductivity type layer can be formed on the upper surface parallel to the main surface of the substrate. Light is attenuated by multiple reflection on a parallel plate by utilizing the inclined S surface to emit light, but if there is an inclined surface, light can escape the influence of multiple reflection and go out of the semiconductor. There is an advantage. The first conductivity type layer, that is, the clad layer can be made of the same material and have the same conductivity type as the crystal layer forming the S-plane, and after the crystal layer forming the S-plane is formed, the concentration is continuously adjusted. However, as another example, a structure in which a part of the crystal layer of the S-plane functions as the first conductivity type layer may be used.

In this light emitting diode, the light emitting efficiency can be increased by utilizing the good crystallinity of the inclined S plane. In particular, if current is injected only into the S-plane, which has good crystallinity,
Since the S-plane has good In incorporation and good crystallinity, it is possible to increase the luminous efficiency. Further, the area extending in the plane substantially parallel to the S-plane of the active layer may be larger than the area when the active layer is projected onto the main surface of the substrate or the underlying growth layer. By increasing the area of the active layer in this way, the light emitting area of the device increases,
This alone can reduce the current density. In addition, by making the area of the active layer large, it is possible to reduce the brightness saturation, which can increase the light emission efficiency.

Considering a hexagonal pyramid-shaped crystal layer, the step state is deteriorated particularly near the apex of the S plane, and the luminous efficiency is low at the apex. This is a hexagonal pyramid-shaped element, which is divided into four points on the apex side, the side left side, the side right side, and the bottom side around the center of each surface. This is because abnormal growth is likely to occur near the top while hitting. On the other hand, the steps on both sides are almost linear and are densely packed, resulting in a very good growth state, and the part near the bottom surface is a slightly wavy step. , The abnormal growth on the top side has not occurred. Therefore, in this light emitting diode, the current injection into the active layer can be controlled so that the density is lower near the apex than at the peripheral side. In order to pass a low-density current near the apex, the electrode is formed on the side of the slope, but the electrode is not formed on the apex, or before the electrode is formed on the apex. The structure may form a current blocking region.

Electrodes are formed on the crystal layer and the second conductivity type layer, respectively. In order to reduce the contact resistance, a contact layer may be formed and then an electrode may be formed on the contact layer. When these electrodes are formed by a vapor deposition method, a short circuit may occur if the p electrode and the n electrode are placed on both the crystal layer and the crystal seed layer formed under the mask,
Accurate vapor deposition is required for each.

By aligning the light emitting diodes for the three primary colors and arranging them so as to be scannable, the electrode area can be suppressed by utilizing the S surface, so that it can be used as a display with a small area.

In order to fabricate a display surface of a light emitting diode display device by arranging such LEDs in a matrix, for example, a two-step enlargement transfer method can be used as follows.

In the two-step magnifying transfer method described below, the elements fabricated on the first substrate with a high degree of integration are temporarily held so as to be separated from the state in which the light emitting diodes are arranged on the first substrate. Then, the two-step enlargement transfer is performed in which the light emitting diode held by the temporary holding member is further separated and transferred onto the second substrate. In addition,
In this example, the transfer is performed in two stages, but the transfer can be performed in three stages or in multiple stages depending on the degree of expansion in which the light emitting diodes are arranged separately.

FIG. 5 is a diagram showing the basic steps of the two-step expansion transfer method. First, the LEDs 212 such as the red LEDs 14, the green LEDs 15, and the blue LEDs 16 are densely formed on the first substrate 210 shown in FIG. By forming the elements densely, the number of elements generated on each substrate can be increased, and the product cost can be reduced. The first substrate 210 is a substrate on which various elements can be formed, such as a semiconductor wafer, a glass substrate, a quartz glass substrate, a sapphire substrate, and a plastic substrate.
12 may be formed directly on the first substrate 210, or may be formed by arranging those formed on another substrate.

Next, as shown in FIG. 5B, the first substrate 21
Each LED 212 is transferred from 0 to the first temporary holding member 211 indicated by the broken line in the drawing, and the first temporary holding member 2
Each LED 212 is held on top of 11. Here, the LEDs 212 adjacent to each other are separated from each other and are arranged in a matrix as illustrated. That is, the LED 212 is transferred so as to widen the space between the elements in the x direction, but is also transferred so as to widen the space between the elements in the y direction perpendicular to the x direction. The distance separated at this time is not particularly limited, and as an example, the distance can be set in consideration of the resin portion formation and the electrode pad formation in the subsequent process. All the elements on the first substrate 210 may be separated and transferred when transferred from the first substrate 210 onto the first temporary holding member 211. In this case, the sizes of the first temporary holding members 211 are the LEDs 212 arranged in a matrix.
The size may be equal to or larger than the size obtained by multiplying the number (in the x direction and the y direction) by the distance. It is also possible to transfer some of the elements on the first substrate 210 to the first temporary holding member 211 while being separated from each other.

After such a first transfer step, as shown in FIG. 5C, the LEDs 212 existing on the first temporary holding member 211 are separated from each other, so that the LEDs 212 are separated.
Each time, resin coating around the element and formation of electrode pads are performed. The resin coating around the element is formed for facilitating the formation of the electrode pad and facilitating the handling in the next second transfer step. As will be described later, the electrode pad is formed after the second transfer step in which the final wiring is continued, so that the electrode pad is formed in a relatively large size so that wiring failure does not occur at that time. The electrode pads are not shown in FIG. 5 (c). The resin-formed chip 214 is formed by covering each LED 212 with the resin 213. The LED 212 is located on the plane substantially at the center of the resin-formed chip 214, but may be located at a position deviated to one side or a corner side.

Next, as shown in FIG. 5D, a second transfer step is performed. In this second transfer step, the LEDs 212 arranged in a matrix on the first temporary holding member 211 are transferred onto the second substrate 215 so as to be further separated together with the resin forming chip 214.

Also in the second transfer step, the adjacent LED
The resin forming chips 214 are separated from each other and arranged in a matrix as shown in the drawing. That is, the LED 212 is transferred so as to widen the space between the elements in the x direction, but is also transferred so as to widen the space between the elements in the y direction perpendicular to the x direction. Assuming that the position of the element arranged in the second transfer step corresponds to the pixel of the final product such as an image display device, the LED arranged in the second transfer step is approximately an integral multiple of the pitch between the initial LEDs 212.
The pitch is 212. Here, the enlargement ratio of the pitch separated from the first substrate 210 to the first temporary holding member 211 is n, and the first temporary holding member 211 to the second substrate 21.
When the enlargement ratio of the separated pitch in 5 is m, a value E that is a substantially integral multiple is represented by E = nxm.

A resin-formed chip 214 is formed on the second substrate 215.
Wiring is applied to each LED 212 separated from each other.
At this time, the wiring is performed while the connection failure is suppressed as much as possible by using the electrode pad or the like previously formed. For example, when the LED 212 is a light emitting element such as a light emitting diode, this wiring includes wiring to the p electrode and the n electrode, and when the LED 212 is a liquid crystal control element, wiring such as a selection signal line, a voltage line, or an alignment electrode film is used. including.

In the two-step enlargement transfer method shown in FIG. 5, the electrode pad or the resin can be hardened by utilizing the separated space after the first transfer, and the wiring is provided after the second transfer. However, wiring is performed while suppressing the connection failure as much as possible by using the electrode pad or the like previously formed. Therefore, the yield of the image display device can be improved. In addition, in the two-step magnifying transfer method of this example, the step of separating the distance between the elements is two steps. Will be reduced. That is, for example, from the first substrate 210 to the first temporary holding member 2 here.
The enlargement ratio of the separated pitch in 11 is 2 (n = 2),
Assuming that the enlargement ratio of the pitch separated from the first temporary holding member 211 on the second substrate 215 is 2 (m = 2), when it is attempted to transfer to the enlarged range by one transfer,
When the final enlargement ratio is 4 times 2 × 2, it is necessary to transfer the squared 16 times, that is, perform the alignment of the first substrate 16 times. In the two-step enlargement transfer method of this example, the number of alignment is A total of 8 times is obtained by simply adding 4 times the expansion rate 2 squared in the transfer step and 4 times the expansion rate 2 squared in the second transfer step. That is, when the same transfer magnification is intended, (n + m) ² = n ² +2 nm + m ²
Therefore, the number of times of transfer can be reduced by 2 nm. Therefore, the manufacturing process also saves time and cost by the number of times, which is useful especially when the expansion rate is large.

In the second transfer step, the resin-formed chip is treated and transferred from the temporary holding member to the second substrate. The resin-formed chip will be described with reference to FIGS. 6 and 7.

The resin-formed chip 220 is a resin 222 around the LEDs 221 arranged apart from each other. The resin-formed chip 220 transfers the LED 221 from the temporary holding member to the second substrate. It can be used when you do.

The resin-formed chip 220 has a substantially flat plate shape and its main surface has a substantially square shape. This resin-formed chip 22
The shape of 0 is a shape formed by hardening the resin 222,
Specifically, it is a shape obtained by applying an uncured resin on the entire surface so as to include each LED 221, curing this, and then cutting the edge portion by dicing or the like.

Electrode pads 223 and 224 are formed on the front surface side and the back surface side of the substantially plate-shaped resin 222, respectively. The electrode pads 223 and 224 are formed by forming a conductive layer such as a metal layer or a polycrystalline silicon layer, which is a material of the electrode pads 223 and 224, on the entire surface and patterning into a desired electrode shape by a photolithography technique. To be done. These electrode pads 223 and 224 are formed so as to be respectively connected to the p electrode and the n electrode of the LED 221 which is a light emitting element, and a via hole or the like is formed in the resin 222 if necessary.

Here, the electrode pads 223 and 224 are formed on the front surface side and the back surface side of the resin-formed chip 220, but it is also possible to form both electrode pads on one surface, for example, in the case of a thin film transistor. Since there are three electrodes of a source, a gate, and a drain, three or more electrode pads may be formed. The positions of the electrode pads 223 and 224 are deviated from each other on the flat plate in order to prevent the contacts from overlapping even when the contacts are formed from the upper side in the final wiring formation. The shape of the electrode pads 223 and 224 is not limited to the square shape, and may be another shape.

By constructing such a resin-formed chip 220, the periphery of the LED 221 is covered with the resin 222, and the electrode pads 223 and 224 can be accurately formed by flattening, and the electrode pads 223 and 223 are formed in a wider area than the LED 221. 224 can be extended. As described below,
Since the final wiring is performed after the second transfer step, wiring failure can be prevented by performing wiring using the electrode pads 223 and 224 having a relatively large size.

Next, FIG. 8 shows an example of the structure of an LED which is enlarged and transferred by the two-step enlargement and transfer method described above. Figure 8 (a)
Is a cross-sectional view, and FIG. 8B is a plan view. This LE
D is a GaN-based light emitting diode, for example, an element that is crystal-grown on a sapphire substrate. G like this
In an aN-based light emitting diode, laser ablation occurs due to laser irradiation through the substrate, and with the phenomenon of nitrogen vaporization of GaN, film peeling occurs at the interface between the sapphire substrate and the GaN-based growth layer, resulting in device isolation. It has features that make it easy.

First, regarding the structure, a hexagonal pyramidal GaN layer 232 selectively formed on the underlying growth layer 231 made of a GaN-based semiconductor layer is formed. An insulating film (not shown) is present on the underlying growth layer 231, and the hexagonal pyramidal GaN layer 232 has an M-shaped opening in the insulating film.
It is formed by the OCVD method or the like. This GaN layer 23
Reference numeral 2 denotes a pyramid-type growth layer covered with an S plane (1-101 plane) when the main surface of the sapphire substrate used for growth is the C plane, and is a region doped with silicon. The inclined S-plane portion of the GaN layer 232 functions as a clad having a double hetero structure. GaN layer 232
An InGaN layer 233, which is an active layer, is formed so as to cover the tilted S-plane, and a magnesium-doped GaN layer 234 is formed on the outside thereof. The magnesium-doped GaN layer 234 also functions as a clad.

In such a light emitting diode, the p electrode 2
35 and the n-electrode 236 are formed. The p-electrode 235 is an N formed on the magnesium-doped GaN layer 234.
It is formed by depositing a metal material such as i / Pt / Au or Ni (Pd) / Pt / Au. The n-electrode 236 is made of Ti / Al / Pt /
It is formed by depositing a metal material such as Au. Note that FIG.
When the n electrode is taken out from the back surface side of the underlayer growth layer 231, as shown in 0, the formation of the n electrode 236 is not necessary on the front surface side of the underlayer growth layer 231.

The GaN-based light emitting diode having such a structure is an element capable of emitting blue light, and can be peeled off from the sapphire substrate relatively easily by laser ablation, and a laser beam is selectively irradiated. As a result, selective peeling is realized. The GaN-based light emitting diode may have a structure in which an active layer is formed on a flat plate or in a strip shape, or may have a pyramidal structure in which a C plane is formed at an upper end portion. Further, it may be another nitride-based light emitting device, a compound semiconductor device, or the like.

Next, a specific method of arranging the light emitting diodes shown in FIG. 5 will be described with reference to FIGS. 9 to 16. The light emitting diode is the G shown in FIG.
An aN light emitting diode is used. First, as shown in FIG. 9, a plurality of light emitting diodes 242 are formed in a matrix on the main surface of the first substrate 241. The size of the light emitting diode 242 can be about 20 μm. As a constituent material of the first substrate 241, a material such as a sapphire substrate having a high transmittance for the wavelength of the laser with which the light emitting diode 242 is irradiated is used. Although the p-electrode and the like are formed in the light-emitting diode 242, the final wiring has not yet been made, and the groove 242 for element isolation is formed.
g is formed, and the individual light emitting diodes 242 can be separated. The groove 242g is formed by, for example, reactive ion etching. Such a first substrate 24
1 is opposed to the first temporary holding member 243, and selective transfer is performed as shown in FIG.

First substrate 2 of first temporary holding member 243
On the surface facing 41, the peeling layer 244 and the adhesive layer 245 are formed.
Are formed in two layers. Here, as an example of the first temporary holding member 243, a glass substrate, a quartz glass substrate, a plastic substrate, or the like can be used, and as an example of the peeling layer 244 on the first temporary holding member 243, A fluorine coat, a silicone resin, a water-soluble adhesive (for example, polyvinyl alcohol: PVA), a polyimide or the like can be used. In addition, the first temporary holding member 2
As the adhesive layer 245 of 43, a layer made of any one of an ultraviolet (UV) curable adhesive, a thermosetting adhesive, and a thermoplastic adhesive can be used. As an example, a quartz glass substrate is used as the first temporary holding member 243, a polyimide film 4 μm is formed as the release layer 244, and then a UV curable adhesive as the adhesive layer 245 is applied to a thickness of about 20 μm.

Adhesive layer 2 of first temporary holding member 243
45 is adjusted so that the cured region 245s and the uncured region 245y are mixed, and is aligned so that the light emitting diode 242 for selective transfer is located in the uncured region 245y. Hardened area 245s and uncured area 24
For adjustment such that 5y is mixed, for example, UV-curable adhesive is selectively exposed to UV with an exposure machine at a pitch of 200 μm,
The portion to which the light emitting diode 242 is transferred may be uncured, and the rest may be cured. After such alignment, the light emitting diode 242 at the transfer target position
On the other hand, the laser 273 is irradiated from the back surface of the first substrate 241, and the light emitting diode 242 is separated from the first substrate 241 by using laser ablation. The GaN-based light emitting diode 242 has a metal G at the interface with sapphire.
Since it decomposes into a and nitrogen, it can be peeled off relatively easily. Excimer laser, harmonic Y
AG laser or the like is used.

By the peeling using the laser ablation, the light emitting diode 242 which is selectively irradiated is G
It is separated at the interface between the aN layer and the first substrate 241, and is transferred to the adhesive layer 245 on the opposite side by piercing the p electrode portion. Light-emitting diode 2 in a region not irradiated by another laser
No. 42 is a region s where the corresponding adhesive layer 245 is hardened and is not transferred to the first temporary holding member 243 side because no laser irradiation is performed.
Although only one light emitting diode 242 is selectively laser-irradiated in FIG. 9, it is assumed that the light-emitting diode 242 is also laser-irradiated in a region separated by n pitches. According to such selective transfer, the first temporary holding member 24 is separated from the light emitting diodes 242 more than when they are arranged on the first substrate 241.
Arranged on three.

The light emitting diode 242 is held by the adhesive layer 245 of the first temporary holding member 243, and the back surface of the light emitting diode 242 is on the n electrode side (cathode electrode side). Since the back surface of is removed and washed so that there is no resin (adhesive),
If the electrode pad 246 is formed as shown in FIG. 10, the electrode pad 246 is electrically connected to the back surface of the light emitting diode 242.

As an example of the cleaning of the adhesive layer 245, the adhesive resin is etched by oxygen plasma and cleaned by UV ozone irradiation. Moreover, when the GaN-based light-emitting diode is peeled off from the first substrate 241 made of a sapphire substrate by a laser, Ga is deposited on the peeled surface, and therefore it is necessary to etch the Ga. It will be done with nitric acid. Then, the electrode pad 246 is patterned. At this time, the electrode pad on the cathode side can be about 60 μm square. As the electrode pad 246, a transparent electrode (ITO, ZnO based, etc.) or a material such as Ti / Al / Pt / Au is used. In the case of a transparent electrode, even if the back surface of the light emitting diode is largely covered, the light emission is not interrupted, so the patterning accuracy is rough, a large electrode can be formed, and the patterning process is facilitated.

In FIG. 11, the light emitting diode 242 is moved from the first temporary holding member 243 to the second temporary holding member 247.
Transferred to the via hole 2 on the anode electrode (p electrode) side.
After forming 50, the anode side electrode pad 249 is formed and the adhesive layer 245 made of resin is diced. As a result of this dicing, the element isolation groove 25
1 is formed, and the light emitting diodes 242 are divided for each element. The element isolation groove 251 is formed by a plurality of parallel lines extending vertically and horizontally as a plane pattern for separating the light emitting diodes 242 in a matrix.
At the bottom of the element isolation groove 251, the second temporary holding member 2 is provided.
The surface of 47 is exposed.

A peeling layer 248 is formed on the second temporary holding member 247. The release layer 248 can be formed using, for example, a fluorine coat, a silicone resin, a water-soluble adhesive (for example, PVA), polyimide, or the like. The second temporary holding member 247 is, for example, a so-called dicing sheet in which a UV adhesive material is applied to a plastic substrate, and it is possible to use a member whose adhesive force decreases when UV is irradiated.

At the time of transfer from the first temporary holding member 243 to the second temporary holding member 247, excimer laser is irradiated from the back surface of the temporary holding member 243 having such a peeling layer 244 formed thereon. Thereby, for example, the peeling layer 2
When polyimide is formed as 44, peeling occurs due to ablation of the polyimide at the interface between the polyimide and the quartz substrate, and each light emitting diode 242 is transferred to the second temporary holding member 247 side.

When forming the anode electrode pad 249, the surface of the adhesive layer 245 is etched by oxygen plasma until the surface of the light emitting diode 242 is exposed. First, an excimer laser, a harmonic YAG laser, or a carbon dioxide laser can be used to form the via hole 250. At this time, the via hole has a diameter of about 3 to 7 μm. The anode side electrode pad is Ni /
It is formed of Pt / Au or the like. In the dicing process, dicing using a normal blade and laser processing using the above laser are performed when a narrow cut having a width of 20 μm or less is required. The cut width depends on the size of the light emitting diode 242 covered with the adhesive layer 245 made of resin in the pixel of the image display device.

Next, the light emitting diode 242 is transferred from the second temporary holding member 247 to the second substrate 260. Then, the above-mentioned transfer method is applied to this transfer. That is, as shown in FIG. 12A, the second temporary holding member 2
47 and the third adhesive layer 102 having a weak adhesive force, the third temporary holding member 101 having flexibility is arranged to face each other, and the pressure contact roll 103 is lowered to make the third temporary holding. The upper surface of the working member 101, that is, the main surface on the side opposite to the side on which the third adhesive layer 102 is formed, is brought into contact, and the pressure contact roll 103 is further lowered, so that FIG.
As shown in (b), the side of the third adhesive layer 102 of the third temporary holding member 101 is brought into contact with the upper surface of the resin-formed chip 109 (the light emitting diode 242 and the adhesive layer 245). Then, when the third temporary holding member 101 comes into contact with the resin-formed chip 109, the lowering of the pressure roll 103 is stopped, and a predetermined pressure is applied to the third temporary holding member 101 for a predetermined time.

At this time, the second temporary holding member 2
The laser beam 104 is irradiated from the back surface side of 47, that is, the side opposite to the side on which the resin-formed chip is formed, to the position corresponding to the resin-formed chip 109 to be transferred on the third adhesive layer 102. Thus, for example, when the peeling layer 248 is formed of polyimido, peeling occurs due to ablation of the polyimide at the interface between the polyimide and the quartz substrate, and the resin-formed chip 109 including each light emitting diode 242 is placed on the third temporary holding member 101. Is transcribed to.
Then, the pressure contact roll 103 is raised and separated from the third temporary holding member 101, so that the second temporary holding member 24
Resin molded chip 1 from 7 to the third temporary holding member 101
The transfer of 09 is completed.

FIG. 12C shows a state in which the pressure contact roll 103 is lifted up and separated from the third temporary holding member 101. The resin-formed chip 109 is attached to the third temporary holding member 101. Has been transcribed. In the transfer, the third temporary holding member 101 is unwound from the unwinding roll 105, and after the transfer of the resin-formed chip, the third temporary holding member 101 is wound up on the winding roll 106.

Next, the take-up roll 106, on which the third temporary holding member 101 having the resin-formed chip 109 transferred thereon is wound, is used as the unwinding roll 107 to further transfer the resin-formed chip 109 to the second substrate 260. To do.
That is, as shown in FIG. 13 (a), the unwinding roll 10
7, the take-up roll 108, and the second substrate 260 from the second temporary holding member 247 to the third temporary holding member 101.
The resin-formed chip 109 is arranged in the same configuration as when it is transferred. In addition, the resin-formed chip 109 of the second substrate 260
A fourth adhesive layer 110 made of a thermoplastic resin is formed on the main surface on the side of transferring.

Then, as shown in FIG. 13B, with the third temporary holding member 101 and the second substrate 260 facing each other, the pressure contact roll 103 is lowered to lower the third temporary holding member. The upper surface of 101, that is, the resin-formed chip 10
9 is brought into contact with the main surface on the side opposite to the side on which the resin 9 is transferred, and the pressure contact roll 103 is further lowered to transfer the resin-formed chip 1 to the third temporary holding member 101.
The bottom surface of 09 is brought into contact with the second substrate 260. And
When the bottom surface of the fertilization system chip 109 comes into contact with the second substrate 260, the lowering of the pressure roll 103 is stopped, and a predetermined pressure is applied to the third temporary holding substrate 101 for a predetermined time. At this time, from the back surface side of the second substrate 260, that is, from the side opposite to the side on which the fourth adhesive layer 110 is formed,
The position corresponding to the resin-formed chip 109 to be transferred on the fourth adhesive layer 110 is irradiated with the laser beam 104 and heated. This allows the resin-formed chip 109 to be bonded to the second substrate 260. Then, the fourth adhesive layer 110 is cooled in a state where the resin formed chip 109 is in contact with the fourth adhesive layer 110, and the resin formed chip 110 is fixed to the second substrate 260. Finally, the pressure roll 103 is raised to raise the third temporary holding member 101.
The transfer of the resin-formed chip from the third temporary holding member 101 to the second substrate 260, that is, the transfer of the light-emitting diode 242 is completed by releasing the light-emitting diode from the third temporary holding member 101.

FIG. 13C shows a state in which the pressure contact roll 103 is lifted and separated from the third temporary holding member 101, and the resin-formed chip 1 is attached to the second substrate 260.
09 is transcribed. Then, the third temporary holding member 101 is fed by a predetermined amount in the direction of arrow A in FIG. 13 (c), and the above steps are repeated, so that the resin-formed chips 109, that is, the light-emitting diodes 242 are arranged at the desired pitch. It can be transferred to the second substrate 260.

Further, an electrode layer 257 which also functions as a shadow mask is provided on the second substrate 260, and this electrode layer 2
The 57 may be heated by irradiating the laser light 104, and the fourth adhesive layer 110 may be indirectly heated. In particular, as shown in FIG. 14, when the black chrome layer 258 is formed on the screen side surface of the electrode layer 257, that is, the side on which the viewer of the image display device is present, the contrast of the image can be improved. The energy absorption rate of the black chrome layer 258 can be increased so that the fourth adhesive layer 110 can be efficiently heated by the selectively irradiated laser beam 256.

FIG. 15 is a diagram showing a state where light emitting diodes 242, 261, 262 of three colors of RGB are arranged on the second substrate 260 and an insulating layer 259 is applied. When the mounting position on the second substrate 260 is shifted to the position of the color by the transfer method described above, the mounting is performed so that pixels of three colors can be formed while the pixel pitch remains constant. As the insulating layer 259, a transparent epoxy adhesive, a UV curable adhesive, polyimide, or the like can be used. The three-color light emitting diodes 242, 261, 262 do not necessarily have to have the same shape. In FIG. 15, the red light emitting diode 2
61 has a structure that does not have a hexagonal pyramid GaN layer, and its shape is different from that of the other light emitting diodes 242 and 262. At this stage, however, each light emitting diode 242, 261, 2 is formed.
62 is already covered with a resin adhesive layer 245 as a resin-formed chip, so that the same handling can be realized despite the difference in the element structure.

FIG. 16 is a diagram showing a wiring forming process.
Openings 265, 266, 267, and 26 are formed in the insulating layer 259.
8, 269, 270 and the light emitting diode 242,
Wiring 2 for connecting the anode and cathode electrode pads 261 and 262 to the wiring electrode layer 257 of the second substrate 260
It is the figure which formed 63, 264, and 271. The opening formed at this time, that is, a via hole, has a large via hole shape because the area of the electrode pads 246, 249 of the light emitting diodes 242, 261, 262 is large, and the via hole position accuracy is also directly formed in each light emitting diode. It can be formed with a coarser precision compared to. The via holes at this time are about 60 μm square electrode pads 246, 24.
With respect to 9, it is possible to form a film having a diameter of about 20 μm. The depth of the via hole is 3 for connecting to the wiring board, connecting to the anode electrode, and connecting to the cathode electrode.
Since there are different kinds of depth, it is controlled by the number of laser pulses to open the optimum depth. After that, a protective layer is formed on the wiring,
The panel of the image display device is completed. A material such as a transparent epoxy adhesive can be used for the protective layer at this time, similarly to the insulating layer 259 in FIG. This protective layer is cured by heating to completely cover the wiring. After that, the driver IC is connected from the wiring at the end of the panel to manufacture the drive panel.

Next, the operation of the light emitting diode display device filter 1 according to the present invention will be described. When the light emitting diode display device filter 1 as described above is attached to the light emitting diode display device, the light emitted from each light emitting diode first enters the diffusion film 7.

At this time, in the light emitting diode display device as described above, the light emitting diode, which is the light source, is a point light source, and the size of the light emitting diode is much smaller than the size of the pixel. It is easy to feel as a gathering. In other words, the halftone dot recognition distance becomes large. Such an increase in the halftone dot recognition distance directly leads to a reduction in screen display quality. Therefore, in order to realize a good screen display quality, it is necessary to correct the halftone dot recognition distance to make the luminance within the pixel uniform.

Therefore, the filter 1 for a light emitting diode display device is provided with the diffusion film 7, and the diffusion film 7 diffuses the irradiation light from the LED. As a result, in the light emitting diode display device filter 1, it is possible to correct the dot recognition distance of the irradiation light from each LED by the diffusion film 7. That is,
In the filter 1 for a light emitting diode display device, it is possible to correct the halftone dot recognition distance by the diffusion film 7 so that the brightness in the pixel becomes uniform.

Therefore, the light emitted from the LED is
By passing through the diffusion film 7 arranged in the filter 1 for the light emitting diode display device, it is emitted from the diffusion film 7 as light having a proper halftone dot recognition distance and uniformed luminance in the pixel.

At this time, the light emitted from the LED is diffused by passing through the diffusion film 7 and is emitted with the spot diameter enlarged.

Next, the light emitted from the diffusion film 7 enters each light transmitting portion of the color filter 6 arranged adjacent to the diffusion film 7. Then, the color filter 6
The light incident on each of the light transmitting portions is corrected for color unevenness in the light transmitting portion.

It is difficult to manufacture LEDs with uniform colors, and even when LEDs of the same color formed on the same wafer are compared with each other, there is a difference in luminous intensity between the LEDs, that is, color unevenness of the emitted colors. To do. Therefore, such L
In a light emitting diode display device configured by arranging a plurality of EDs, color unevenness occurs in the screen due to color unevenness of the emission color of the LED. And since the amount of LEDs used is in the level of millions, all LEDs
There is a problem that it is very difficult to adjust the color of the and is very time consuming.

Further, when the diffusion film 7 is used as described above, the brightness in the pixel can be adjusted, but external light is also diffusely reflected and the contrast is lowered. There is a problem in that the hue is changed due to light reflection and the like, which causes color unevenness.
The presence of such color unevenness directly leads to deterioration in screen display quality. Therefore, in order to realize good screen display quality, it is necessary to correct the color unevenness between the LEDs and the color unevenness in the adjacent pixels and the entire pixels.

Therefore, in the light emitting diode display device filter 1, a color filter 6 having a light transmitting portion corresponding to each color of the LED is provided on the front surface of the diffusion film 7.
The light emitted from the LED is transmitted through the light transmitting portion of the color filter 6. Then, in the light transmitting portion, the light in the wavelength region corresponding to each light transmitting portion is transmitted at a predetermined transmittance and the light in other wavelength regions is blocked, so that each LED
It is possible to correct color unevenness between areas. As a result, in the light emitting diode display device filter 1, since it is possible to correct the color unevenness between the LEDs, it is possible to make the color tone of the entire display surface uniform.

Further, in the light emitting diode display device filter 1, the light transmitted through the diffusion film 7 is made incident on the light transmitting portion of the color filter 6. With respect to the light whose color tone is changed by passing through the diffusion film 7, the light other than the wavelength range of each color is blocked in each light transmitting portion. Therefore, it is possible to correct the color unevenness caused by passing through the diffusion film 7. it can. As a result, in the light-emitting diode display device filter 1, it is possible to correct the color unevenness between the LEDs caused by the transmission through the diffusion film 7, so that the color tone of the entire display surface can be made uniform. It is possible.

Therefore, the light incident on each light transmitting portion of the color filter 6 has its color unevenness corrected among the LEDs,
The light is emitted in a state where the color tone of the entire display surface is uniform.

Here, the shape of the light transmitting portion is a square in FIG. 3, but the shape is not limited to this, and may be, for example, a circular shape.

Further, the arrangement state and the mutual positional relationship of the light transmitting portions of each color are not particularly limited, and the arbitrary arrangement state and the mutual positional relationship can be adopted.

In FIG. 3, the light-transmitting portions of the respective colors are shown to have the same size, but the size of the light-transmitting portions of the respective colors, that is, the arrangement area of the light-transmitting portions need not be equal. It can be appropriately set according to various conditions such as the level of brightness depending on the color. That is, when the brightness of the LED of a specific color, that is, the emission brightness is relatively lower than that of the other colors, the arrangement area of the light transmitting portion of the color having the low emission brightness is smaller than that of the other colors. It may be relatively large. For example,
When the emission brightness of the blue LED 16 is low, the arrangement area of the blue light transmitting portion 4 is increased, and when the emission brightness of the red LED 14 is low, the arrangement area of the red light transmitting portion 2 is increased, and the green LED 15 is also increased. If the emission brightness of is low,
The arrangement area of the green light transmitting portion 3 may be made relatively larger than the arrangement area of the light transmitting portions of other colors. As described above, by appropriately setting the arrangement area of the light transmitting portions of each color, it is possible to further increase the contrast and realize good visibility.

The front side of the color filter 6,
That is, in the main surface on the side opposite to the side where the diffusion film 7 is arranged, the peripheral portion of each light transmitting portion, that is, the boundary portion between the light transmitting portions serves as a light absorbing member. The color of the light absorbing member can be black, for example.
That is, the black matrix 5 is formed as shown in FIG. In this way, by forming the black matrix 5 using the boundary portion between the light transmitting portions as the light absorbing member, among the external light that passes through the transparent substrate 8 from the outside and enters the color filter 6, 2 It is possible to prevent the light irradiated to the boundary portion as indicated by the middle arrow A from being reflected. That is, normally, when the external light A is reflected at the boundary portion between the light transmitting portions,
The external light A is returned as reflected light to the front surface side of the light emitting diode display device filter 1 again. And with this reflected light,
The mixture of the light transmitted through the respective light transmitting portions causes a reduction in contrast of screen display and the like, which causes a reduction in visibility. However, in the light emitting diode display device filter 1, the peripheral portion of each light transmitting portion, that is, the boundary portion between the light transmitting portions serves as the light absorbing member. That is, since the black matrix 5 is formed, external light that has passed through the transparent substrate 8 and is incident on the color filter 6 from the outside is not reflected at the boundary portion, and thus the above-described reflected light is generated. Can be prevented. As a result, in the filter 1 for a light emitting diode display device, the above-described reflected light and the light transmitted through the respective light transmitting portions do not coexist, and the influence of external light on the screen display such as a decrease in contrast due to external light A is caused. This can be prevented, and it becomes possible to realize better visibility.

Further, in the above-mentioned light emitting diode display device, the light reflection preventing film 17 is formed in the peripheral portion of each LED, that is, in the boundary portion between the LEDs. Figure 2
External light B, which is transmitted from the outside through the transparent substrate 8 and each light transmitting portion and is incident on the display surface as indicated by the middle arrow B, is reflected at the peripheral portion of each LED, that is, the boundary portion between the LEDs, and is reflected again. As a reflected light, the light is transmitted through each light transmitting portion and goes out. At this time, the reflected light is chromatically corrected by passing through the light transmitting portion, but the generation of the reflected light causes a reduction in contrast and the like, and a reduction in visibility.

Therefore, in this light emitting diode display device, the light reflection preventing film 17 is provided in the peripheral portion of each LED, that is, in the boundary portion between the LEDs to prevent the above-described reflected light from being generated. That is, by disposing the light reflection preventing film 17 in the peripheral portion of each LED, the external light B that is incident light from the outside is not reflected in the peripheral portion of each LED, and the above-described reflected light is generated. Can be prevented. As a result, it is possible to prevent the influence of external light on the screen display, such as a decrease in contrast caused by the above-described reflected light, and it is possible to realize better visibility. In addition, instead of the above-described light reflection preventing film 17, the same effect as above can be obtained by disposing a light absorbing film at the peripheral portion of each LED, that is, at the boundary portion between the LEDs.

As described above, the light emitting diode display device having the antireflection film 17 in the peripheral portion of each LED and the peripheral portion of each light transmitting portion as described above, that is, the boundary portion between the light transmitting portion and the light transmitting portion is formed. By using the light-emitting diode display device filter 1 according to the present invention, which is a light absorbing member, in combination, it is possible to prevent the influence of external light on the screen display, such as a decrease in contrast due to external light. It is possible to achieve high visibility.

Since the filter 1 for a light emitting diode display device as described above is provided with the diffusion film 7 as described above, it is possible to correct the color unevenness between the LEDs,
It is possible to make the color tone of the entire display surface uniform. Therefore, by using this light emitting diode display device filter 1, the halftone dot recognition distance is appropriate,
Good screen display quality can be realized.

Further, since the light emitting diode display device filter 1 is provided with the color filter 6, it is possible to correct the color unevenness among the LEDs as described above, and to make the color tone of the entire display surface uniform. Is possible. Further, the filter 1 for a light emitting diode display device can correct color unevenness among the LEDs caused by passing through the diffusion film 7, and can make the color tone of the entire display surface uniform. Has been done. Therefore, by using the light emitting diode display device filter 1, it is possible to realize good screen display quality in which the color tone of the entire display surface is made uniform and there is no color unevenness.

In the light emitting diode display device filter 1, the color filter 6 is arranged adjacent to the diffusion film 7, and the diffusion film 7 is attached to the light emitting diode display device so as to face the LED. .
That is, the light emitted from the LED of the light emitting diode display device is configured to pass through the diffusion film 7 and then through the color filter 6.

With this structure, in the filter 1 for a light emitting diode display device, the light emitted from each LED is diffused by the diffusion film 7 and is incident on the color filter 6 in a state where the spot is enlarged. Therefore, the light emitted from each LED can have a large spot diameter when displayed on the screen, and the light emitted from the LED can be effectively utilized.

Further, by adopting such a configuration,
In the light emitting diode display device filter 1, as described above, in the light emitted from each LED, it is possible to correct the color unevenness between the LEDs caused by passing through the diffusion film 7, and thus the entire display surface. It is said that it is possible to make the color tones uniform. Therefore, by using the light emitting diode display device filter 1, it is possible to realize good screen display quality in which the color tone of the entire display surface is made uniform and there is no color unevenness.

With such a structure, in the light emitting diode display device filter 1, a considerable amount of external light is absorbed when it is transmitted from the outside through the transparent substrate 8 and each light transmitting portion, and the external light is absorbed. Since the luminance of the reflected light on the display surface is weakened, it is possible to prevent the influence of external light such as a decrease in contrast. Therefore, as described above, by diffusing the external light transmitted through the transparent substrate 8 and the respective light transmitting portions, the light reflection preventing film 17 is not provided in the peripheral portion of the LED of the light emitting diode display device as described above. Even in such a case, it is possible to prevent the influence of external light on the screen display such as a decrease in contrast due to external light, and it is possible to realize better visibility.

In the above description, the case where the light diffusing portion is in the form of a film has been described, but the shape of the light diffusing portion is not limited to this, and a film is formed on the main surface of the color filter 6, for example. May be.

The light emitting diode display device to which the present invention is applied includes the above-described light emitting diode display device filter 1 on the front surface of the display surface 11, and the light emitted from the LED of the light emitting diode display device is the light emitting diode display device. The filter is configured to pass through the light diffusing portion and then pass through the light transmitting portion.

With this structure, in this light emitting diode display device, the light emitted from each LED is diffused by the light diffusing portion and is incident on the light transmitting portion in a state where the spot is enlarged. Since the light emitted from each light emitting diode has a large light spot diameter when displayed on the screen, the light emitted from the light emitting diode can be effectively used as a light source.

Further, in this light emitting diode display device,
Even if the light transmitted through the light diffuser has color unevenness between the light emitting diodes, it can be corrected, and the color tone of the entire display surface can be made uniform. It is possible to realize uniformized and good screen display quality without color unevenness.

In this light emitting diode display device, a large amount of external light is absorbed when transmitting through the light transmitting portion,
Since the brightness of the reflected light on the display surface of the external light is weakened, it is possible to prevent the influence of external light such as a decrease in contrast.
It becomes possible to realize better visibility.

Therefore, according to this light emitting diode display device, it is possible to realize a light emitting diode display device having excellent surface display quality and visibility.

In order to manufacture the light emitting diode display device as described above, first, as shown in FIG. 1, the color filter 6 and the light emitted from the LED are diffused on the transparent substrate 8 made of glass, resin or the like. The light-emitting diode display device filter 1 is constructed by laminating the light-diffusing film 7 which is a light-diffusing portion in this order.

Further, for example, by using the above-mentioned two-step expansion transfer method, the red LED, the green LED and the blue L
The dot matrix type display surface 11 for full color display provided with the ED is manufactured.

Next, as shown in FIG. 2, the filter 1 for the light emitting diode display device is provided with the LEDs 14, 1 on the display surface 11.
Spacers 2 and 5 and 16 and the diffusion film 7 are opposed to each other and are separated from the display surface 11 by a predetermined distance.
It is fixed to the display surface 11 with the adhesive 22 through 1.

The other portions are manufactured by a conventionally known method with a conventionally known structure, whereby a light emitting diode display device to which the present invention is applied can be manufactured.

[0116]

The image display device filter according to the present invention is an image display device filter arranged on the front surface of the display surface of an image display device including a plurality of light-emitting diodes. A light diffusing portion which is arranged on the front surface of the display surface of the image display device at a predetermined distance from the display surface and diffuses light emitted from the light emitting diode; and a light diffusing portion which is arranged on the front surface of the light diffusing portion. Of the light emission color of the corresponding light emission color, and a light transmitting portion that blocks light of other wavelength bands and blocks light of other wavelength bands.

Since the image display device filter according to the present invention configured as described above can diffuse the light emitted from each light emitting diode by the light diffusing section, the light emitted from each light emitting diode is It is possible to increase the spot diameter of the light when the screen is displayed, and it is possible to effectively use the light emitted from the light emitting diode as a light source.

Further, in this image display device filter,
Even if the light transmitted through the light diffuser has color unevenness between the light emitting diodes, it can be corrected and the color tone of the entire display surface can be made uniform, so that the color tone of the entire display surface is uniform. It is possible to realize a good screen display quality that is uniform and has no color unevenness.

In this image display device filter, a large amount of external light is absorbed when transmitting through the light transmitting portion,
Since the brightness of the reflected light on the display surface of the external light is weakened, it is possible to prevent the influence of external light such as a decrease in contrast.
It becomes possible to realize better visibility.

Further, the image display device according to the present invention is an image display device having a display surface constituted by light emitting diodes of a plurality of emission colors, and the image display device filter is provided on the front surface of the display surface. The image display device filter is disposed on the front surface of the display surface of the image display device, and is disposed on the front surface of the display surface of the image display device at a distance from the display surface to diffuse light emitted from the light emitting diode. And a light transmitting portion that transmits light in a wavelength range of a corresponding emission color among a plurality of emission colors and blocks light in other wavelength ranges.

In the image display device according to the present invention configured as described above, since the light emitted from each light emitting diode can be diffused by the light diffusing section of the image display device filter, each light emitting diode emits light. The spot diameter of the emitted light when displayed on the screen can be made large, and the light emitted from the light emitting diode can be effectively used as a light source.

Further, in this image display device, even when the light transmitted through the light diffusing section has color unevenness among the light emitting diodes, it is possible to correct the color unevenness on the entire display surface. Therefore, it is possible to realize a good screen display quality in which the color tone of the entire display surface is uniform and there is no color unevenness.

In this image display device, a large amount of external light is absorbed when it passes through the light transmitting portion, and the brightness of the reflected light on the display surface of the external light is weakened. Can be prevented, and better visibility can be realized.

The method of manufacturing an image display device according to the present invention is a method of manufacturing an image display device including a display surface including light emitting diodes of a plurality of emission colors and an image display device filter. A light transmitting portion that transmits light in a wavelength range of a corresponding emission color among the plurality of emission colors and blocks light in other wavelength ranges on the front surface of the light diffusion section that diffuses light emitted from the light emitting diode. The image display device filter is formed by arranging the image display device filter, and the image display device filter is arranged on the front surface of the display surface so that the display surface and the light diffusing portion are opposed to each other by a predetermined distance. It is a thing.

In the image display device manufactured by the method for manufacturing an image display device according to the present invention as described above, the light emitted from the light emitting diode of the image display device is transmitted through the light diffusing portion of the filter for the image display device, After that, it has a configuration of transmitting through the light transmitting portion.

Therefore, in the method of manufacturing the image display device according to the present invention, the light emitted from each light emitting diode can have a large spot diameter of the light when it is displayed on the screen, and the color tone of the entire display surface is made uniform. Is possible and also
It is possible to manufacture an image display device capable of preventing the influence of external light such as reduction in contrast.

Therefore, according to the present invention, an image display device excellent in screen display quality and visibility and a manufacturing method thereof,
And it aims at providing the filter for image display apparatuses which can implement | achieve this.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing a configuration example of a filter for a light emitting diode display device to which the present invention has been applied.

FIG. 2 is a cross-sectional view showing a state in which a filter for a light emitting diode display device to which the present invention is applied is mounted on a display surface of a light emitting diode display device.

FIG. 3 is a front view showing a configuration example of a filter for a light emitting diode display device to which the present invention has been applied.

FIG. 4 is a cross-sectional view showing a display surface of a light emitting diode display device.

FIG. 5 is a schematic view showing a method of arranging elements.

FIG. 6 is a schematic perspective view of a resin-formed chip.

FIG. 7 is a schematic plan view of a resin-formed chip.

FIG. 8 is a diagram showing an example of a light emitting element, in which (a) is a cross-sectional view and (b) is a plan view.

FIG. 9 is a schematic sectional view showing a first transfer step.

FIG. 10 is a schematic cross-sectional view showing an electrode pad forming step.

FIG. 11 is a schematic cross-sectional view showing an electrode pad forming step after the transfer to the second temporary holding member.

FIG. 12 is a schematic cross-sectional view showing an example of a transfer process by a two-step expansion transfer method for manufacturing a display surface.

FIG. 13 is a schematic cross-sectional view showing an example of a transfer process by a two-step expansion transfer method for manufacturing a display surface.

FIG. 14 is a schematic cross-sectional view showing an example of a transfer process by a two-step expansion transfer method for manufacturing a display surface.

FIG. 15 is a schematic cross-sectional view showing a step of forming an insulating layer.

FIG. 16 is a schematic cross-sectional view showing a wiring forming step.

[Explanation of symbols]

1 Light emitting diode display filter 2 Red light transmission part 3 Green light transmission part 4 Blue light transmission part 5 Black matrix 6 color filters 7 Diffusion film 8 transparent substrate 14 Red LED 15 green LED 16 blue LED 17 Light reflection prevention film

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Toyoji Ohata             6-735 Kita-Shinagawa, Shinagawa-ku, Tokyo Soni             -Inside the corporation F-term (reference) 2H048 BA02 BA55 BB01 BB02 BB10                       BB41                 5C094 AA03 AA08 BA23 CA19 CA24                       ED03 ED13                 5F041 CA05 CA34 CA46 CA65 DA01                       DA07 DA34                 5G435 AA04 BB04 CC09 CC12 FF06                       GG12 GG27 KK05 KK07 KK10

Claims (22)

[Claims] 1. A filter for an image display device arranged on a front surface of a display surface of an image display device including light emitting diodes of a plurality of emission colors, said filter being provided on the front surface of the display surface of said image display device. A light diffusing portion which is arranged at a predetermined distance from the display surface and diffuses the light emitted from the light emitting diode, and a light emitting portion which is arranged in front of the light diffusing portion and has a wavelength of a corresponding light emitting color among the plurality of light emitting colors. A filter for an image display device, comprising: a light transmitting portion that transmits light in a wavelength region and blocks light in other wavelength regions. 2. The image display device filter according to claim 1, wherein the image display device is a full-color image display device in which the plurality of emission colors are three colors of red, green, and blue. 3. A filter for an image display device according to claim 1, wherein a light absorption film or a light reflection prevention film is arranged between the light emitting diodes on the display surface. 4. A black matrix is formed by using a light absorbing member between the respective light transmitting portions.
A filter for the image display device described. 5. An image display device having a display surface including light emitting diodes of a plurality of emission colors, the image display device filter being provided in front of the display surface, wherein the image display device filter comprises: A light diffusing section which is arranged on the front surface of the display surface of the image display device at a predetermined distance from the display surface and diffuses light emitted from the light emitting diode; and a plurality of the light diffusing sections arranged on the front surface of the light diffusing section. An image display device, comprising: a light transmitting portion that transmits light in a wavelength range of a corresponding emission color of light emission colors and blocks light in other wavelength ranges. 6. The image display device according to claim 5, wherein the plurality of emission colors are three colors of red, green and blue. 7. The image display device according to claim 5, wherein a light absorption film or a light reflection prevention film is disposed between the light emitting diodes on the display surface. 8. A black matrix is formed by using a light absorbing member between the respective light transmitting portions.
The image display device described. 9. The light emitting diode forms on the substrate a crystal layer having an S-plane inclined with respect to the main surface of the substrate or a plane substantially equivalent to the S-plane, and the S-plane or the S-plane is formed. First extending in a plane parallel to the plane substantially equivalent to the plane
The image display device according to claim 5, wherein a conductive type layer, an active layer, and a second conductive type layer are formed on the crystal layer. 10. The image display device according to claim 9, wherein the crystal layer has a wurtzite crystal structure. 11. The image display device according to claim 9, wherein the crystal layer is made of a nitride semiconductor. 12. The image display device according to claim 9, wherein the crystal layer is provided by selective growth on the substrate via a base growth layer. 13. The image display device according to claim 12, wherein the selective growth is performed by selectively removing the underlying growth layer. 14. The image display device according to claim 12, wherein the selective growth is performed by utilizing an opening of a mask layer which is selectively formed. 15. The image display device according to claim 14, wherein the crystal layer is one that is selectively grown so as to spread laterally from the opening of the mask layer. 16. The image display device according to claim 9, wherein the main surface of the substrate is a C + surface. 17. When the S-plane formed on the substrate or a plane substantially equivalent to the S-plane is a part of the crystal layer, current injection into the active layer is performed on the S-plane. The image display device according to claim 9, wherein the image display device is provided only. 18. The light emitting diode forms a crystal layer by forming a S-plane formed on a substrate or a slope substantially equivalent to the S-plane having a substantially hexagonal pyramid shape to form a crystal layer. 7. The crystal layer is formed by forming a first conductivity type layer, an active layer, and a second conductivity type layer extending in a plane parallel to a plane substantially equivalent to the S-plane. 5. The image display device according to item 5. 19. The current injection into the active layer has a lower density on the side near the apex than on the side around the apex.
8. The image display device according to item 8. 20. A method of manufacturing an image display device comprising a display surface comprising light emitting diodes of a plurality of emission colors and an image display device filter, the method comprising: light diffusion for diffusing light emitted from the light emitting diodes. The filter for the image display device is formed by arranging, on the front surface of the section, a light transmitting section that transmits light in a wavelength range of a corresponding emission color of the plurality of emission colors and blocks light in other wavelength ranges. Then, the method for manufacturing an image display device, characterized in that the filter for the image display device is arranged on the front surface of the display surface so that the display surface and the light diffusing portion are opposed to each other and separated by a predetermined distance. 21. The method of manufacturing an image display device according to claim 20, wherein the plurality of light emitting diodes are arranged in a matrix. 22. The light emitting diodes are transferred to a first temporary holding member so that the light emitting diodes are spaced apart from the state in which the light emitting diodes are arranged in a matrix on the first substrate. A first transfer step of holding, a step of hardening the light emitting diode held by the first temporary holding member with a resin, a step of dicing the resin to separate each light emitting diode, the first temporary step A second transfer step of transferring the light emitting diode, which is held by the holding member and hardened with a resin, to the second substrate while further separating the light emitting diode, the second transfer step including the first temporary holding Part of the plurality of light emitting diodes held by the member is selectively transferred to a flexible third substrate including an adhesive layer, and the light emitting diodes transferred to the third substrate are bonded to another substrate. Equipped with layers 22. The method of manufacturing an image display device according to claim 21, wherein the image is transferred onto the second substrate.