JP2003142738A - Mounting method of element, illuminating device and manufacturing method thereof, image display device and manufacturing method thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide the mounting method of an element capable of mounting the element simply, and to provide an illuminating device and an image display device which are excellent in productivity. SOLUTION: In the mounting method of the element which mounts a plurality of elements on the mounting substrate, the elements are dropped naturally in a fluid whereby the elements are arranged on the mounting substrate at random. In such a mounting method of the elements, the elements are dropped naturally on the mounting substrate to mount the elements on the mounting substrate at random whereby the elements are mounted on the mounting substrate very simply in a short period of time.

Description

Detailed Description of the Invention

[0001]

TECHNICAL FIELD The present invention relates to an element mounting method,
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lighting device and a manufacturing method thereof, an image display device and a manufacturing method thereof, and in particular, a mounting method of elements in which elements are randomly arranged, and a lighting device to which the same is applied and a manufacturing method thereof
The present invention relates to an image display device and a manufacturing method thereof.

[0002]

2. Description of the Related Art At present, electronic devices and the like are constructed by arranging a large number of fine elements, electronic parts, electronic devices, and electronic parts in which they are embedded in an insulator such as plastic. Widely used. For example, in a light emitting diode display (LED display) and a light emitting diode lighting device (LED lighting device), light emitting elements are arranged in a matrix and assembled into an image display device.

[0003]

However, in the case of configuring these electronic devices, it is required to mount the LED with an error of about several μm, so that the display device and the like are configured using minute elements. In doing so, the technical problem is how to mount the element with a small error. Then, as a conventional method for mounting an element, for example, as shown in FIG.
As shown in 6 (a), the adhesive layer 102 on the base substrate 101
The element 103 is arranged on the substrate, and the element 102 is taken out by using the vacuum suction head 104 as shown in FIG.
As shown in (c), there is a technique for mounting an element by placing it on the adhesive layer 106 of another substrate 105. However, there is a problem that it takes a lot of time to arrange the elements with high accuracy by such a method.

The light emitting element includes, for example, a light emitting element using gallium nitrogen, and when a light emitting element using gallium nitrogen is used as the light emitting element, it is produced by epitaxial growth in order to uniformly arrange nitrogen in gallium. To do. In this case, dislocation lines are generated at the boundaries between the molecules grown from different parts. Then, at this dislocation line, carriers or holes are stagnant, so that the quality as a semiconductor deteriorates.

Further, such a light emitting element is referred to as a single light emitting diode (LED)
It is called an LED. ) Or a display device, a size of at least several tens of μm is required to obtain a sufficient amount of light. However, in the case of vapor phase growth, the quality tends to deteriorate as the device grows, and it is difficult to manufacture an LED having a size of about several tens of μm because a high technology is required in view of the yield problem. Is.

On the other hand, in order to construct an image display device or the like using LEDs having a relatively small size, it is necessary to use a larger number of LEDs in order to increase the amount of light emission, and therefore a larger number of LEDs are mounted on the substrate. Since they have to be arranged on the upper side, there is a problem that the number of manufacturing steps increases.

Further, in an illuminating device or an image display device using LEDs, since the light emitting point is small with respect to the area of the image, it is necessary to disperse the light emitted from the light emitting point.

However, the present situation is that a method for solving such a problem and simply manufacturing an image display device having a sufficient amount of light has not been established.

Therefore, the present invention was devised in view of the above-mentioned conventional circumstances, and an element mounting method capable of easily mounting an element, and a lighting device and an image excellent in productivity. An object is to provide a display device.

[0010]

A device mounting method according to the present invention for achieving the above object is a device mounting method for mounting a plurality of devices on a mounting substrate. The device is characterized in that the elements are randomly arranged on the mounting substrate by spontaneously dropping.

In the mounting method of the element according to the present invention as described above, since the elements are randomly mounted on the mounting board by naturally dropping the elements on the mounting board, the mounting board can be very easily and in a short time. The device is mounted on top.

Further, the illuminating device according to the present invention which achieves the above object has a light emitting surface which is provided with a plurality of light emitting elements on a mounting substrate and supplies a drive current to the light emitting elements. The illuminating device for causing the light emitting element to emit light by means of the light emitting element is randomly arranged on the mounting substrate.

In the illumination device according to the present invention having the above-described structure, the light emitting elements are not regularly arranged on the mounting substrate, but are randomly arranged in an arbitrary state. Therefore, this illuminating device does not need to arrange light emitting elements in an orderly manner, and is therefore much easier and shorter to manufacture than a conventional illuminating device in which light emitting elements are arranged in a predetermined pattern.

Further, the method for manufacturing an illumination device according to the present invention which achieves the above-mentioned object has a light emitting surface having a plurality of light emitting elements on a mounting substrate, and a driving current is applied to the light emitting elements. A method of manufacturing a lighting device that emits light from the light emitting element by supplying the light emitting element, wherein the light emitting element is randomly arranged on a mounting substrate to form the light emitting surface.

In the method for manufacturing a lighting device according to the present invention configured as described above, the light emitting elements are not arranged regularly on the mounting substrate, but the light emitting elements are randomly arranged in an arbitrary state. Therefore, in the method for manufacturing the lighting device, it is not necessary to arrange the light emitting elements in order,
Compared with the conventional method for manufacturing an illuminating device in which light emitting elements are arranged in a predetermined pattern, the illuminating device is manufactured in a much shorter time.

Further, an image display device according to the present invention which achieves the above-mentioned object is an image display device having a display surface constituted by mounting light emitting elements of a plurality of emission colors on a mounting substrate, It is characterized in that the light emitting elements are randomly arranged on the mounting substrate.

In the image display device according to the present invention configured as described above, the light emitting elements are not arranged regularly on the mounting substrate, but are randomly arranged in an arbitrary state. Therefore, in this image display device, since it is not necessary to arrange the light emitting elements in an orderly manner, the image display device can be manufactured much easier and in a shorter time as compared with the conventional image display device in which the light emitting elements are arranged in a predetermined pattern. .

Further, the method of manufacturing an image display device according to the present invention which achieves the above-mentioned object is an image display device having a display surface constituted by mounting light emitting elements of a plurality of emission colors on a mounting substrate. The manufacturing method is characterized by arranging light emitting elements on a mounting substrate at random to form a display surface.

In the method of manufacturing an image display device according to the present invention as described above, the light emitting elements are not arranged regularly on the mounting substrate, but the light emitting elements are randomly arranged in an arbitrary state. Therefore, in the method of manufacturing the image display device, it is not necessary to arrange the light emitting elements in an orderly manner, so that it is much simpler than the conventional method of manufacturing the image display device in which the light emitting elements are arranged in a predetermined pattern, and The image display device is manufactured in a short time.

[0020]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, a mounting method of an element to which the present invention is applied, a lighting device and a manufacturing method thereof, an image display device and a manufacturing method thereof will be described in detail with reference to the drawings. It should be noted that the present invention is not limited to the following description, and can be appropriately modified without departing from the scope of the present invention. First, a method of mounting a basic element will be described.

A device mounting method according to the present invention is a device mounting method for mounting a plurality of devices on a mounting substrate, wherein the devices are randomly dropped in a fluid to randomly distribute the devices on the mounting substrate. It is characterized by being arranged.

In the present invention, a so-called pyramid type light emitting diode (hereinafter referred to as pyramid type L) is used as an element.
Sometimes called ED. ) Can be used. The pyramid type LED will be described below.

In this LED, a crystal layer having an S-plane inclined to the main surface of the substrate or a plane substantially equivalent to the S-plane is formed on the substrate, and the S-plane or the S-plane is substantially formed. The first conductive type layer, the active layer, and the second conductive type layer extending in a plane parallel to a plane that is substantially equivalent to the crystalline layer are formed.

The substrate used for this LED is S described later.
There is no particular limitation as long as it can form a crystal layer having a plane or a plane equivalent to its S plane, and various types can be used. For example, the substrate that can be used is
Sapphire (including Al ₂ O ₃ , A surface, R surface, and C surface)
SiC (including 6H, 4H, 3C) GaN, Si, Z
nS, ZnO, AlN, LiMgO, GaAs, MgA
A substrate made of 1 ₂ O ₄ , InAlGaN, or the like, preferably a hexagonal crystal substrate or a cubic crystal substrate made of these materials, and more preferably a hexagonal crystal substrate.
For example, when a sapphire substrate is used, it is possible to use a sapphire substrate having a C-plane as the main surface, which is often used when growing a gallium nitride (GaN) -based compound semiconductor material. In this case, the C plane as the main surface of the substrate includes a plane orientation inclined in the range of 5 to 6 degrees.

The crystal layer formed on this substrate has an S plane inclined with respect to the main surface of the substrate or a plane substantially equivalent to the S plane. The crystal layer is a material layer capable of forming a light emitting region including a first conductivity type layer, an active layer, and a second conductivity type layer on a plane parallel to an S plane or a plane substantially equivalent to the S plane described later. There is no particular limitation as long as it is,
Among them, it is preferable to have a wurtzite crystal structure.

As such a crystal layer, for example, III
Group compound semiconductors and BeMgZnCdS compound semiconductors can be used, and further gallium nitride (GaN) compound semiconductors, aluminum nitride (AlN) compound semiconductors, indium nitride (InN) compound semiconductors, indium gallium nitride (InGaN) can be used. A compound semiconductor or an aluminum gallium nitride (AlGaN) compound semiconductor can be preferably formed, and a gallium nitride compound semiconductor is particularly preferable.

In this LED, InGaN,
AlGaN, GaN, etc. do not necessarily have only ternary mixed crystals.
It does not refer to a nitride semiconductor containing only a mixed crystal, but may include, for example, I
It goes without saying that nGaN may contain a trace amount of Al and other impurities within a range that does not change the action of InGaN. Further, the surface substantially equivalent to the S-plane includes a plane orientation tilted in the range of 5 to 6 degrees with respect to the S-plane.

As a method for growing this crystal layer, various vapor phase growth methods can be mentioned, for example, a metal organic compound vapor phase growth method (MOCVD (MOVPE) method) and a molecular beam epitaxy method (MBE method). A vapor phase growth method, a hydride vapor phase growth method (HVPE method), or the like can be used. Among them, according to the MOVPE method, a material having good crystallinity can be obtained quickly.

In the MOVPE method, TM is used as a Ga source.
G (trimethylgallium), TEG (triethylgallium), TMA (trimethylaluminum) and TEA (triethylaluminum) as Al sources, and TMI (trimethylindium) and TEI as In sources.
Alkyl metal compounds such as (triethylindium) are often used, and gases such as ammonia and hydrazine are used as nitrogen sources. As the impurity source, Si is silane gas, Ge is germane gas,
For Mg, a gas such as Cp2Mg (cyclopentadienyl magnesium) is used, and for Zn, a gas such as DEZ (diethyl zinc) is used.

In the MOCVD method, these gases are supplied to the surface of the substrate heated to, for example, 600 ° C. or higher to decompose the gases, whereby the InAlGaN compound semiconductor can be epitaxially grown.

Prior to the formation of the crystal layer, it is preferable to form a base growth layer on the substrate. This undergrowth layer consists of, for example, a gallium nitride layer or an aluminum nitride layer, and the undergrowth layer consists of a combination of a low temperature buffer layer and a high temperature buffer layer or a combination of a buffer layer and a crystal seed layer that functions as a crystal seed. May be Like the crystal layer, this undergrowth layer can be formed by various vapor phase growth methods,
For example, a vapor phase growth method such as a metal organic compound vapor phase growth method (MOCVD method), a molecular beam epitaxy method (MBE method), or a hydride vapor phase epitaxy method (HVPE method) can be used.

When the growth of the crystal layer is started from the low temperature buffer layer, polycrystals are easily deposited on the mask, which becomes a problem. Therefore, by including a crystal seed layer and then growing a surface different from the substrate thereon, a crystal with better crystallinity can be grown. Also, in order to perform crystal growth using selective growth, it is necessary to form from a buffer layer if there is no crystal seed layer, but if selective growth is performed from the buffer layer, growth is hindered Growth is likely to occur. Therefore, by using the crystal seed layer, the crystal can be grown with good selectivity in the region where the growth is required. The buffer layer also has the purpose of alleviating the lattice mismatch between the substrate and the nitride semiconductor. Therefore, the buffer layer may not be formed when a substrate having a lattice constant close to that of the nitride semiconductor or a substrate having the same lattice constant is used. For example, a buffer layer may be formed on SiC without keeping AlN at a low temperature, and AlN and GaN may be formed on a Si substrate.
May grow as a buffer layer without lowering the temperature, and still good quality GaN can be formed. Further, the structure may be such that no buffer layer is provided, and a GaN substrate may be used.

In this LED, the selective growth method can be used to form the S-plane or a plane substantially equivalent to the S-plane. The S-plane is a stable plane that can be seen when selectively grown on the C + plane, is a plane that is relatively easy to obtain, and has a hexagonal plane index of (1-101). Similar to the C + and C− planes on the C plane, there are S + and S− planes on the S plane, but here, unless otherwise specified, the S + plane is grown on the C + plane GaN. This is described as the S-plane. In addition, about S side, S
The + side is the stable side. The surface index of the C + surface is (000
1).

Regarding the S-plane, when the crystal layer is made of a gallium nitride-based compound semiconductor as described above, the number of bonds from Ga to N is 2 or 3 on the S-plane, which is next to the C-plane. Become. Here, since the C-plane cannot be practically obtained on the C + plane, the number of bonds on the S-plane becomes the largest. For example, when a nitride is grown on a sapphire substrate having a C-plane as the main surface, the surface of the wurtzite type nitride generally becomes the C + plane, but the S-plane can be formed by using selective growth. , The bond of N, which tends to be easily detached on the plane parallel to the C-plane, is bonded by one bond from Ga, while it is bonded by at least one pound on the inclined S-plane. . Therefore, V /
The III ratio is increased, which is advantageous for improving the crystallinity of the laminated structure. Further, when grown in a direction different from that of the substrate, dislocations extending upward from the substrate may be bent, which is also advantageous in reducing defects.

In this LED, the crystal layer has a structure having at least the S-plane or a plane substantially equivalent to the S-plane. In particular, the crystal layer is substantially equivalent to the S-plane or the S-plane. May have a structure in which each of the surfaces forms a substantially hexagonal pyramid-shaped slope, or an S-plane or a surface substantially equivalent to the S-plane forms a substantially hexagonal pyramid-shaped slope, and the C-plane is also included. Alternatively, a structure in which a surface substantially equivalent to the C plane constitutes the upper flat surface portion of the substantially hexagonal truncated pyramid shape, that is, a so-called substantially hexagonal truncated pyramid shape may be used. The substantially hexagonal pyramid shape and the substantially hexagonal pyramid shape do not need to be exactly hexagonal pyramids, and include those in which some of the faces disappear. Also,
The ridgeline between the crystal planes of the crystal layer does not necessarily have to be a straight line. Further, the substantially hexagonal pyramid shape or the substantially hexagonal pyramid shape may be a linearly extended shape.

As a specific selective growth method, such selective growth is carried out by selectively removing a part of the underlying growth layer, or selectively on the underlying growth layer or This is performed by utilizing the opened portion of the mask layer formed before the formation of the underlying growth layer. For example, when the underlying growth layer is composed of a buffer layer and a crystal seed layer, the crystal seed layer on the buffer layer is subdivided into small regions having a diameter of about 10 μm, and S is grown by crystal growth from each portion.
It is possible to form a crystal layer having a surface or the like.

For example, the subdivided crystal seed layers can be arranged so as to be separated with a margin for separating the light emitting elements taken into consideration, and individual small regions can be strip-shaped, lattice-shaped, circular-shaped, Square shape, hexagonal shape, triangular shape,
The shape may be a rectangular shape, a rhombus shape, or a modified shape thereof. Forming a mask layer on the underlying growth layer,
Selective growth is also possible by selectively opening the mask layer to form a window region. The mask layer can be composed of, for example, a silicon oxide layer or a silicon nitride layer. When the above-described substantially hexagonal truncated pyramid shape or substantially hexagonal pyramid shape is a linearly extended shape, a pyramidal frustum or pyramid shape in which one direction is the longitudinal direction makes the window region of the mask layer band-shaped. Alternatively, the crystal seed layer may be formed into a band shape.

The window region of the mask layer is made 10 μm by selective growth.
By making a circle of about m (or a hexagon of which sides are 1-100 directions, or a hexagon of which sides are 11-20 directions), it is possible to easily fabricate a selective growth region which is about twice that size. Also, if the S-plane is in a different direction from the substrate, the effect of bending dislocations,
Also, since it has an effect of shielding dislocations, it is also useful for reducing dislocation density.

In the experiment conducted by the present inventors, when the hexagonal truncated pyramid shape grown by using cathode luminescence is observed, the crystal of the S plane is of good quality and the luminous efficiency is higher than that of the C + plane. Has been shown. Especially I
Since the growth temperature of the nGaN active layer is 700 to 800 ° C., the decomposition efficiency of ammonia is low and more N species are required. Also, when the surface was observed with an AFM, the steps were aligned and a surface suitable for incorporation of InGaN was observed. Furthermore, it is known that the growth surface of the Mg-doped layer generally has a poor surface condition at the AFM level, but the growth of the S-plane also causes the Mg-doped layer to grow in a good surface condition and the doping conditions are considerably different. .

Further, when microscopic photoluminescence mapping is performed, it is possible to measure with a resolution of about 0.5-1 μm, but with a normal method grown on the C + plane,
There was unevenness of about 1 μm pitch, and uniform results were obtained for the sample obtained by S-plane by selective growth. Also, SEM
The flatness of the slope seen in Figure 4 is also smoother than that of the C + surface.

In the case of selective growth using the selective growth mask, there is no lateral growth when growing only on the selective mask opening, so lateral growth is performed using microchannel epitaxy. It is possible to make the shape larger than the window region. It is known that the lateral growth using such microchannel epitaxy makes it easier to avoid threading dislocations and reduces dislocations. In addition, such lateral growth also increases the light emitting region, which makes it possible to make the current uniform, avoid current concentration, and reduce the current density.

This semiconductor light emitting device has an S surface or an S surface.
A first conductivity type layer, an active layer, and a second conductivity type layer extending in a plane parallel to a plane substantially equivalent to the plane are formed in the crystal layer.
The first conductivity type is a p-type or n-type cladding layer, and the second conductivity type is the opposite conductivity type. For example, when the crystal layer forming the S-plane is composed of a silicon-doped gallium nitride-based compound semiconductor layer, the n-type cladding layer is composed of a silicon-doped gallium-nitride-based compound semiconductor layer, and an InGaN layer is formed thereon as an active layer. And a magnesium-doped gallium nitride-based compound semiconductor layer is further formed thereon as a p-type clad layer to form a double hetero structure. It is also possible to have a structure in which the InGaN layer which is the active layer is sandwiched between AlGaN layers.

The active layer may be composed of a single bulk active layer, but a single quantum well (SQW) structure, a double quantum well (DQW) structure, and a multiple quantum well (MQ) structure.
The quantum well structure such as the W) structure may be formed. A barrier layer is additionally used in the quantum well structure for the purpose of separating the quantum well. When the active layer is an InGaN layer, the structure is particularly easy to manufacture in the manufacturing process,
The light emission characteristics of the device can be improved. Furthermore this I
The nGaN layer is particularly easy to crystallize and has good crystallinity when grown on the S-plane, which has a structure in which nitrogen atoms are hard to be desorbed, and the luminous efficiency can be improved.

Note that the nitride semiconductor has a property of becoming n-type due to nitrogen vacancies formed in the crystal even though it is non-doped.
Usually, by doping a donor impurity such as Si, Ge, or Se during crystal growth, an n-type having a preferable carrier concentration can be obtained. Further, the p-type nitride semiconductor can be obtained by doping the crystal with an acceptor impurity such as Mg, Zn, C, Be, Ca, or Ba, but in order to obtain a p-layer having a high carrier concentration, Is preferably annealed at a temperature of 400 ° C. or higher in an inert gas atmosphere such as nitrogen or argon after doping with an acceptor impurity. There is also a method of activation by electron beam irradiation or the like, which is activated by microwave irradiation, light irradiation, or the like. There is also a way to make it.

The first-conductivity-type layer, the active layer, and the second-conductivity-type layer extend in a plane parallel to the S-plane or a plane substantially equivalent to the S-plane. Can be easily extended by continuing crystal growth where the S-plane or the like is formed. When the crystal layer has an approximately hexagonal pyramid shape or an approximately hexagonal pyramid trapezoidal shape and each inclined surface is an S plane or the like, the entire light emitting region including the first conductivity type layer, the active layer, and the second conductivity type layer is formed. It can be formed on a part of the S surface. In the case of the substantially hexagonal truncated pyramid shape, the first conductivity type layer, the active layer, and the second conductivity type layer can be formed on the upper surface parallel to the main surface of the substrate. Light is attenuated by multiple reflection on a parallel plate by utilizing the inclined S surface to emit light, but if there is an inclined surface, light can escape the influence of multiple reflection and go out of the semiconductor. There is an advantage. The first conductivity type layer, that is, the clad layer can be made of the same material as the crystal layer forming the S-plane and of the same conductivity type, and is formed while continuously adjusting the concentration after forming the crystal layer forming the S-plane. You can also
As another example, a part of the crystal layer of the S plane is the first
It may have a structure that functions as a conductive layer.

In this semiconductor light emitting device, the luminous efficiency can be improved by utilizing the good crystallinity of the inclined S-plane. In particular, if current is injected only into the S-plane, which has good crystallinity,
Since the S plane has good In incorporation and good crystallinity, it is possible to increase the light emission efficiency. Further, the area extending in the plane substantially parallel to the S-plane of the active layer may be larger than the area when the active layer is projected onto the main surface of the substrate or the underlying growth layer.

By thus increasing the area of the active layer, the light emitting area of the device is increased, and the current density can be reduced by itself. In addition, by making the area of the active layer large, it is possible to reduce the brightness saturation, which can increase the light emission efficiency.

Considering a hexagonal pyramid-shaped crystal layer, the step state becomes worse especially near the apex of the S-plane, and the luminous efficiency at the apex is low. This is a hexagonal pyramid-shaped element, which is divided into four points on the apex side, the side left side, the side right side, and the bottom side around the center of each surface. This is because abnormal growth is likely to occur near the top while hitting. On the other hand, the steps on both sides are almost linear and are densely packed, resulting in a very good growth state, and the part near the bottom surface is a slightly wavy step. , The abnormal growth on the top side has not occurred.

Therefore, in this semiconductor light emitting device, the current injection into the active layer can be controlled so that the density is lower near the apex than at the peripheral side. In order to pass a low-density current near the apex, the electrode is formed on the side of the slope, but the electrode is not formed on the apex, or before the electrode is formed on the apex. The structure may form a current blocking region.

Electrodes are formed on the crystal layer and the second conductivity type layer, respectively. In order to reduce the contact resistance, a contact layer may be formed and then an electrode may be formed on the contact layer. When these electrodes are formed by a vapor deposition method, a short circuit may occur if the p electrode and the n electrode are placed on both the crystal layer and the crystal seed layer formed under the mask,
Accurate vapor deposition is required for each.

A plurality of the semiconductor light emitting devices can be arranged to form an image display device or a lighting device. By arranging the respective elements for the three primary colors and arranging them so that they can be scanned, the electrode area can be suppressed by utilizing the S-plane, so that it can be used as a display with a small area.

As such a pyramid type LED, a pyramid type LED 1 as shown in FIG. 1 is used. Regarding the structure, the underlying growth layer 2 made of a GaN-based semiconductor layer is used.
GaN layer 3 which is a hexagonal pyramidal n-layer selectively grown on
Are formed. An insulating film 4 is present on the underlying growth layer 2, and the hexagonal pyramidal GaN layer 3 is formed in the opening of the insulating film 4 by the MOCVD method or the like. This GaN layer 3 is a pyramid-shaped growth layer covered with an S plane (1-101 plane) when the main surface of the sapphire substrate used during growth is the C plane, and is a region doped with silicon. is there. The inclined S-plane portion of the GaN layer 3 functions as a clad having a double hetero structure. GaN layer 3
An InGaN layer 5 which is an active layer is formed so as to cover the inclined S-plane, and a magnesium-doped GaN layer 6 which is a p-layer is formed outside the InGaN layer 5. This magnesium-doped GaN layer 6 also functions as a clad. Then, the p electrode 7 is formed so as to cover the inclined S surface of the GaN layer 6.
Are formed. The p electrode 7 is magnesium-doped G
Ni / Pt / Au or Ni formed on the aN layer 6
It is formed by depositing a metal material such as (Pd) / Pt / Au.

FIG. 2 shows the pyramid type LED 1 as described above by applying the device mounting method according to the present invention to the substrate 11.
It is sectional drawing which shows the state mounted in. In order to mount the pyramid-type LED 1 on the substrate 11 as shown in FIG. 2, first, as shown in FIG. 3, the adhesive layer 12 is formed on the main surface of the substrate 11 on which the pyramid-type LED 1 is mounted by, for example, an adhesive. . Here, the substrate 11 on which the pyramid-type LED 1 is mounted is not particularly limited, and can be appropriately selected depending on various conditions such as intended use. Further, the adhesive layer 12 is not limited to the adhesive, and it is sufficient that the pyramid-type LED 1 can be fixed to the substrate, and various materials can be used. When the adhesive layer 12 is made of an adhesive, a thermoplastic resin or the like is suitable as the adhesive. The thickness of the adhesive layer 12 is also not particularly limited.

Next, the substrate 11 having the adhesive layer 12 formed thereon is
The adhesive layer 12 is arranged in a substantially flat place so that the pyramid-type LED 1 is mounted on the substrate 11 as shown in FIG.
That is, it is arranged at a predetermined height corresponding to the position where the adhesive layer 12 is formed. Then, the pyramid-type LED 1 is mounted on the substrate 1.
Let it fall naturally on 1. At this time, the pyramid type LED
1 is allowed to fall naturally in the atmosphere.

When the pyramid-type LED 1 is naturally dropped in the atmosphere, the pyramid-type LED 1 is initially dropped.
1 is oriented in various directions as shown in FIG. However, the pyramid-type LED 1 immediately starts rotating so that the C plane of the pyramid-type LED 1 faces downward. The pyramid-type LED 1 is in a state in which the C-plane of the pyramid-type LED 1 faces downward, that is, the pyramid-type L 1 by the time immediately before it falls on the substrate as shown in FIG.
The C surface of ED1 and the substrate face each other. As a result, the pyramid-type LED 1 is placed on the substrate 11 in a state where the C-plane of the pyramid-type LED 1 faces downward, that is, the C-face of the pyramid-type LED 1 and the substrate 11 face each other as shown in FIG. 7. To fall. And the substrate 1
Since the adhesive layer 12 is formed on the substrate 1, the pyramid-type LED 1 dropped on the substrate 11 is fixed to the substrate 11 by the adhesive layer 12 at the dropped position. Further, for example, when a thermosetting resin or the like is used as the adhesive layer 12, the adhesive layer 12 is cured by subjecting the adhesive layer 12 to heat treatment, such as laser heating, so that the pyramid-type LED 1 is placed on the substrate 11. Can be fixed. At this time, the pyramid LEDs 1 are not arranged on the substrate 11 with some regularity, but are randomly arranged on the substrate 11 in an arbitrary state as shown in FIG. 7. As described above, the pyramid type LED 1 can be mounted on the substrate 11 at random.

In the above description, it is determined whether or not the pyramid-type LED 1 is dropped onto the substrate with the C-plane of the pyramid-type LED 1 facing downward, that is, with the C-face of the pyramid-type LED 1 and the substrate facing each other. , Pyramidal L
It depends on the size of the ED1 and the environment in which the pyramid LEDs 1 are scattered, that is, the environment in which the pyramid LEDs 1 naturally fall. For example, when a substance having a size of 20 μm or less moves in the atmosphere at a speed lower than the speed of sound, the atmosphere can be treated as a viscous fluid. When the pyramid-type LED 1 is dropped in the viscous fluid, the pyramid-type LED 1 is placed on the substrate in a state in which the C-face of the pyramid-type LED 1 faces downward, that is, the C-face of the pyramid-type LED 1 and the substrate face each other. To fall. Therefore, when the pyramid-type LED 1 having a size of 20 μm or less is dropped in a fluid that can be handled as a viscous fluid, the C-plane of the pyramid-type LED 1 faces downward, that is, C of the pyramid-type LED. It can be dropped onto the substrate 11 with the surface and the substrate facing each other. The fluid that can be handled as such a viscous fluid may be a gas or a liquid. Then, specifically, in addition to air, that is, the atmosphere, ultrapure water or a liquid containing no solid substance as an impurity can be used.

Further, in the above, the pyramid type LED 1
Is preferably dropped from a height approximately 10 times or more the height of the pyramid-type LED 1. Pyramid type LE
By allowing D1 to fall naturally from a height of 10 times or more the height of the pyramid-type LED 1, the pyramid-type LE
A state in which the D1 is rotated from a state in which it is oriented in various directions in the initial stage of falling and the C surface of the pyramid-type LED 1 is oriented downward,
That is, it is possible to secure a time period in which the C surface of the pyramid-type LED 1 and the substrate face each other. This ensures that the pyramid-type LED 1 is
It can be dropped onto the substrate 11 in a state in which the C face of 1 faces downward, that is, the C face of the pyramid-type LED 1 and the substrate 11 face each other.

In the above, wiring may be formed on the substrate 11 in advance. By doing so, the electrical connection of the pyramid-type LED 1 can be easily performed. Further, the wiring may be formed by an adhesive conductive adhesive, and the pyramid-type LED 1 may be fixed to the substrate by the conductive adhesive. With such a configuration, electrical connection and fixing of the pyramid-type LED 1 can be performed at once.

Further, when the pyramid-type LED 1 having three emission colors of red, blue and green is arranged on the substrate 11, the above-mentioned operation may be repeated for each emission color. Accordingly, for example, a full-color pixel having three colors of red, blue, and green can be formed.

In the element mounting method as described above,
Since the element is mounted on the substrate 11 by forming the adhesive layer 12 on the substrate 11 and spraying the pyramid-type LEDs 1 on the adhesive layer 12, that is, letting it fall naturally, the pyramid-type LED 1 can be mounted very easily. . Therefore,
For example, a pyramid-type LED 1 using a vacuum suction head or the like
It is possible to mount the pyramid-type LED 1 much more easily and in a shorter time as compared with the case of mounting the LEDs one by one. Therefore, the mounting method of this element can efficiently mount the element. That is, it can be said that the mounting method of this element is a method with good work efficiency and excellent productivity.

Further, in the mounting method of this element, the adhesive layer 1
The pyramid-type LED 1 (not shown) that did not drop onto the substrate 2 is not fixed on the substrate 11 and the adhesive layer 12
It is possible to fix only the pyramid-type LED 1 that has dropped onto the substrate 11. Therefore, according to the mounting method of this element, it is very easy to partially mount the pyramid type LED 1 only on a desired position of the substrate 11. That is, by selectively forming the adhesive layer 12 only at the position where the pyramid-type LED 1 is to be mounted, selective mounting of the pyramid-type LED 1 is easily realized. Since the pyramid-type LED 1 that has not dropped onto the adhesive layer 12 is not fixed, it can be easily removed and collected from the substrate 11 by means such as blowing it off with wind pressure or flushing with a liquid, and reuse it. It is possible.

In the mounting method of this element, even when the size of the pyramid-type LED 1 is changed, a fluid which becomes an environment for spraying the pyramid-type LED 1 is selected, and the viscosity of the fluid is controlled. It is possible to mount the pyramid-type LED 1 of various sizes. However, as described above, the size of the pyramid-type LED 1 is limited to 20 μm.

As a modification of the above-described mounting method of the element, for example, the pyramid-type LED 1 may be dispersed in a liquid such as ink or a volatile solvent, and the liquid may be applied onto the substrate 11. It is possible. In this case, the liquid in which the pyramid-type LED 1 is dispersed needs to satisfy the conditions described above. Before applying, the liquid is well stirred to well disperse the pyramid-type LED 1 in the liquid so that it does not precipitate. Then, by applying this liquid to a predetermined position on the substrate 11, the liquid plays the role of the viscous fluid described above, and the pyramid-type LED 1 can be mounted on the substrate 11 in the same manner as above.

Next, an illuminating device according to the present invention to which the above-mentioned mounting method for elements is applied and a method for manufacturing the same will be described. FIG. 8 is a cross-sectional view of a main part of a light emitting surface showing a configuration example of an LED lighting device configured by applying the present invention. In FIG. 8, reference numeral 1 denotes a plurality of pyramid-type LEDs 1 mounted on the substrate 22, which are fixed to the substrate 22 by an adhesive layer 23. Then, these pyramid-type LEDs 1 are sealed in a container 24 made of a material having a light-transmitting property and L
The ED module 21 is configured, and a plurality of the LED modules 21 are used to form a light emitting surface to configure an LED lighting device. Reference numeral 25 denotes a lens provided above the container 24 facing the pyramid-type LED 1, and the container 24 and the substrate 22 are fixed by an adhesive or the like. 26 is a liquid filled with water or an organic solvent such as alcohol filled in the container 24. With such a configuration, the pyramid-type LED 1 directly contacts the liquid 24 in the container 24 to radiate heat, so that the temperature rise due to heat generation of the pyramid-type LED 1 can be suppressed. As a result, the substrate 22
It is possible to increase the mounting density of the pyramid-type LEDs 1 in the pyramid-type LED 1 and increase the luminous efficiency of the pyramid-type LED 1 itself. Further, in this LED lighting device, the pyramid-type LED 1 described in the mounting method of the element is used as the pyramid-type LED 1. The pyramid-type LEDs 1 are not arranged on the substrate 22 with some regularity, but randomly.
It is arranged on the substrate 22 in an arbitrary state. Further, in this LED lighting device, the pyramid-type LED 1 is mounted on the substrate 22 with the C-plane of the pyramid-type LED 1 facing downward, that is, with the C-face of the pyramid-type LED 1 and the substrate 22 facing each other. Has been done.

In the LED lighting device as described above, the pyramid type LEDs 1 are not regularly arranged on the substrate 22, but are randomly and arbitrarily arranged on the substrate 22.
It is placed on top. Therefore, in this LED lighting device, it is not necessary to arrange the pyramid-type LEDs 1 in an orderly and accurate manner, that is, it is not necessary to arrange the pyramid-type LEDs 1, so that the conventional LEDs are arranged in a predetermined pattern.
Compared with the ED lighting device, it is possible to manufacture much more easily and in a shorter time. Therefore, this LED
The lighting device is an LED with excellent work efficiency and excellent productivity.
It is used as a lighting device.

Further, in the LED lighting device as described above,
The pyramid-type LED 1 is mounted on the substrate 22 with the C surface always facing the substrate 22, so that the polarities are uniform and the LED lighting device is made uniform in quality.

In the LED lighting device as described above, the size of the pyramid-type LED 1 is preferably set to a relatively small size of about submicron to several microns. Usually, when an illumination device is configured using LEDs, it is preferable to use LEDs that are as large as possible in order to increase the amount of light emission. However, when the above-described pyramid-type LED 1 is grown and formed by, for example, a vapor phase growth method, the quality tends to deteriorate as the element grows. When a lighting device is constructed using such an element, the quality of the lighting device is not good. Further, there is a problem such as yield, and it is very difficult to obtain a relatively large pyramid LED 1 having a size of about several tens of μm. On the other hand, L of relatively small size
If an illumination device is to be constructed using ED, L
The quality of the ED is good, but more L
Since the ED must be used, and therefore a larger number of LEDs must be arranged on the substrate, there is a problem in that the number of manufacturing steps is increased.

However, in the LED lighting device according to the present invention, the pyramid LEDs 1 are not arranged in an orderly and accurate manner, and the pyramid LEDs 1 are randomly arranged in an arbitrary state, that is,
Since it is not necessary to arrange the pyramid-type LEDs 1, even if the number of pyramid-type LEDs 1 to be used increases, a problem such as an increase in the number of manufacturing steps does not occur. Therefore, in this LED lighting device, the pyramid-type LED 1 having a relatively small size of submicron to several microns is used.
By using, it is possible to realize an LED lighting device having a sufficient amount of light, high quality and excellent productivity.

Moreover, since the pyramid type LEDs 1 are randomly arranged in the LED module 21,
Although some brightness unevenness occurs in the LED module 21, the light emitted from each of the pyramid-type LEDs 1 is appropriately dispersed by the lens 25 and is emitted to the outside of the LED module 21, so that it is substantially uniformized. Irradiation light is obtained.

In this LED lighting device, the emission color of the pyramid type LED 1 is not particularly limited,
It can be appropriately selected according to the application. That is, using only the pyramid-type LED 1 that emits white light,
The illuminating device may be configured, or the LED illuminating device may be configured by using the pyramid type LEDs 1 of red, blue, green, etc. individually or in any combination.

Further, in this LED lighting device, by using a light-transmissive material for the adhesive layer 23 serving as the first wiring or the wiring 28 serving as the second wiring, it is possible to efficiently extract light emission. Can be configured.

The LED lighting device as described above can be manufactured as follows. First, as shown in FIG. 3, an adhesive layer 23 having the function of the first wiring, which is the lower wiring of the pyramid-type LED 1, is formed on the main surface of the substrate 22 on which the pyramid-type LED 1 is mounted, using a conductive adhesive. .
Here, the constituent material of the substrate 22 on which the pyramid-type LED 1 is mounted is not particularly limited, and can be appropriately selected depending on various conditions such as intended use.

Next, the substrate 22 having the adhesive layer 23 formed thereon is
The pyramid-type LED 1 was placed in a substantially flat place so that the adhesive layer 23 was on the upper side, and the position where the pyramid-type LED 1 was mounted on the substrate 22 as shown in FIG. 3, that is, the adhesive layer 23 was formed. Arrange at a predetermined height corresponding to the position. Then, the pyramid type LED 1 is naturally dropped on the substrate 22. At this time, the pyramid type LED 1 is naturally dropped in the atmosphere.

When the pyramid-type LED 1 is allowed to fall naturally in the atmosphere, the pyramid-type LED 1 faces various directions as shown in FIG. However, the pyramid LED1
Immediately starts rotating so that the C plane of the pyramid-type LED 1 faces downward. And the pyramid type LED 1 is
As shown in FIG. 6, immediately before falling onto the substrate 22, the C surface of the pyramid-type LED 1 faces downward, that is, the C surface of the pyramid-type LED 1 and the substrate 22 face each other. There is. As a result, pyramidal L
ED1 is a pyramid-type LED1 as shown in FIG.
C face downward, that is, the C face of the pyramid-type LED 1 and the substrate face each other and fall onto the substrate 22.

Since the adhesive layer 23 is formed on the substrate 22, the pyramid-shaped L dropped on the substrate 22.
The ED1 is fixed to the substrate 22 by the adhesive layer 23 at the dropped position. At this time, the pyramid-type LED 1
Are not arranged on the substrate 22 with some regularity, but are randomly arranged on the substrate 22 in an arbitrary state as shown in FIG.

Next, the pyramid type L in the adhesive layer 23
For example, irradiation energy of 0.
Electrical connection is made by irradiating with YAG triple wave of ² mJ / cm ² and wavelength of 355 nm and annealing.

Next, as shown in FIG. 9, an insulating resin 27 having a low viscosity is applied on the substrate 22 and the pyramid type LED 1. Here, by using a resin having a low viscosity as the resin 27, the pyramid-type LED 1 can be reliably made into the resin 27.
Can be filled with. Then, as shown in FIG. 10, a wiring 28 on the upper side of the pyramid-type LED 1 to be the second wiring is formed from thereabove to electrically connect the upper surface of the pyramid-type LED 1. Here, the width between wires is
It is made larger than the size of the pyramid-type LED 1 having the largest size.

Then, as shown in FIG. 11, the pyramid-type LED 1 is sealed in a container 24 having a lens 25 provided on the upper part thereof, and the container 24 is filled with a liquid 26 made of an organic solvent such as water or alcohol. LED by doing
A module 21 is configured, and a plurality of LED modules 21 are used to configure an LED lighting device.

In the method of manufacturing the LED lighting device as described above, since the adhesive layer 23 is formed on the substrate 22 and the pyramid-type LEDs 1 are scattered on the adhesive layer 23, the pyramid-type LED 1 is mounted on the substrate 22. The pyramid LED 1 can be mounted very easily. That is, it is possible to mount the elements much more easily and in a shorter time than, for example, mounting the elements one by one using a vacuum suction head or the like. Therefore, according to the method of manufacturing the LED lighting device, it is possible to efficiently manufacture the lighting device. That is, this LED
It can be said that the method for manufacturing a lighting device is a method with good work efficiency and excellent productivity.

Further, in the method for manufacturing the LED lighting device, the pyramid type LED which did not drop on the adhesive layer 23 was used.
No. 1 is not fixed on the substrate 22, and it is possible to fix only the pyramid-type LED 1 dropped on the adhesive layer 23 on the substrate 22. Therefore, in the method for manufacturing the LED lighting device, the pyramid-type LED 1 is mounted on the substrate 22.
It is very easy to carry out partial mounting at only the desired positions of. That is, the pyramid type LED 1
By selectively forming the adhesive layer 23 only at the position where the mounting is desired, selective mounting is easily realized. And the pyramid type LED which did not fall on the adhesive layer 23
Since No. 1 is not fixed, it can be easily removed and collected from the substrate 22 by means such as blowing away with wind pressure, flushing with liquid, etc., and can be reused.

In this method for manufacturing an LED lighting device, even when the size of the pyramid-type LED 1 changes, a fluid that becomes an environment for spraying the pyramid-type LED 1 is selected and the viscosity of the fluid is controlled. As a result, it is possible to mount the pyramid-type LED 1 of various sizes. That is, in the above, the pyramid LE
Although D1 is allowed to fall naturally in the atmosphere, the environment in which the pyramid-type LED 1 is allowed to fall naturally may be a fluid that can be handled as a viscous fluid, similar to the above-described element mounting method, a gas, or a liquid. But good.
Then, specifically, in addition to air, that is, the atmosphere, ultrapure water or a liquid containing no solid substance as an impurity can be used. However, as described above, the size of the element is 2
The limit is 0 μm.

In the method of manufacturing the LED lighting device as described above, it is preferable to use a relatively small pyramid LED 1 having a size of submicron to several microns as the pyramid LED 1. Usually, when an illumination device is configured using LEDs, it is preferable to use LEDs that are as large as possible in order to increase the amount of light emission. However, when the above-described pyramid-type LED 1 is grown and formed by, for example, a vapor phase growth method, the quality tends to deteriorate as the element grows. And
When a lighting device is configured using such an element,
The quality of the lighting device is not good either. Further, there is a problem such as yield, and it is very difficult to obtain a relatively large pyramid LED 1 having a size of about several tens of μm. On the other hand, if an attempt is made to construct an illuminating device using LEDs of a relatively small size, the quality of the LEDs is good, but a larger number of LEDs must be used in order to increase the amount of light emission, and therefore Since a large number of LEDs have to be arranged on the substrate, there is a problem that the number of manufacturing steps increases.

However, in the method for manufacturing the LED lighting device according to the present invention, it is not necessary to arrange the pyramid LEDs 1 in an orderly and accurate manner, and the pyramid LEDs 1 are randomly arranged in an arbitrary state, that is, the pyramid LEDs 1 are arranged. Since it is not necessary to arrange them, there is no problem such as an increase in the number of manufacturing steps even if the number of pyramid-type LEDs 1 used increases. Therefore, according to this method for manufacturing an LED lighting device, a pyramid-type LED having a relatively small size of submicron to several microns is used.
By using No. 1, it is possible to easily manufacture an LED lighting device having a sufficient amount of light, high quality and excellent productivity.

Further, in the above method of manufacturing the LED lighting device, the emission color of the pyramid type LED 1 used is not particularly limited and can be appropriately selected according to the application. In other words, a pyramid-type LED that emits white light
The LED lighting device may be configured by using only one, or the pyramid type LEDs 1 for red, blue, green, etc. may be used alone or in any combination to configure the LED lighting device. When the LED lighting device is configured by using the pyramid-type LEDs 1 having a plurality of emission colors, the pyramid-type LEDs 1 may be mounted by repeating the above operation for each emission color.

Next, an image display apparatus according to the present invention to which the above-described element mounting method is applied and a method for manufacturing the same will be described. FIG. 12 is a perspective view showing the configuration of an LED display device 31 configured by applying the present invention. In the LED display device 31, a small unit 32 configured by tiling an arbitrary plurality of panel modules 34 (16 pieces of 4 × 4 as an example) is further provided, and a plurality of small units 32 (3 × 3 pieces as an example). The middle unit 33 is configured by tiling. And this middle unit 3
3 is an arbitrary plural number (for example, 22 × 16 of 35
The display panel is configured by tiling (two components), and the thin and large-screen LED display device 31 is configured.

The LED display device 31 shown in FIG.
As shown in FIG. 3, one panel module 34 is mounted with an arbitrary number of LEDs to form one pixel, and the pyramid-type LED 1 described in the mounting method of the element described above as an LED to be mounted in the panel module 34. Is used. The pyramid LEDs 1 are not arranged on the substrate 35 with some regularity, but are randomly arranged on the substrate 35 in an arbitrary state.
Furthermore, in this LED display device 31, a pyramid type L
The ED1 is mounted on the substrate 35 in a state where the C surface of the pyramid-type LED 1 faces downward, that is, the C surface of the pyramid-type LED 1 and the substrate 35 face each other.

In the LED display device 31 as described above, the pyramid LEDs 1 are not regularly arranged on the substrate 35, but are randomly arranged on the substrate 35 in an arbitrary state. Therefore, in this LED display device 31, it is not necessary to arrange the pyramid-type LEDs 1 in an orderly and accurate manner, that is, it is not necessary to arrange the pyramid-type LEDs 1, and therefore, compared with the LED display device in which the conventional LEDs are arranged in a predetermined pattern. It is extremely simple and can be manufactured in a short time. Therefore, the LED display device 31 is an LED display device having excellent work efficiency and excellent productivity.

In the LED display device 31 as described above, the pyramid-type LED 1 is mounted on the substrate 35 with the C surface always facing the substrate 35, so that the polarities are uniform and the quality is high. The LED display device is made uniform.

In addition, in the LED display device 31 as described above, the size of the pyramid-type LED 1 is preferably set to a relatively small size of about submicron to several microns. In general, when an image display device is constructed using LEDs, the maximum L
It is preferable to use ED. However, when the above-described pyramid-type LED 1 is grown and formed by, for example, a vapor phase growth method, the quality tends to deteriorate as the element grows. When an image display device is constructed using such elements, the quality of the image display device is not good. Further, there is a problem such as yield, and it is very difficult to obtain a relatively large pyramid LED 1 having a size of about several tens of μm. On the other hand, if an image display device is to be configured using LEDs of a relatively small size, the quality of the LEDs is good, but a larger number of LEDs must be used in order to earn the amount of light emission. Since a larger number of LEDs have to be arranged on the substrate, there is a problem that the number of manufacturing steps increases.

However, in the LED display device 31 according to the present invention, the pyramid LEDs 1 are not arranged orderly and accurately, and the pyramid LEDs 1 are randomly arranged.
Since the pyramid-type LEDs 1 are arranged in an arbitrary state, that is, it is not necessary to arrange the pyramid-type LEDs 1, there is a problem that the number of manufacturing steps increases even if the number of pyramid-type LEDs 1 used increases. Does not happen. Therefore, in this LED display device 31, by using the pyramid-type LED 1 having a relatively small size of submicron to several microns, an LED display device having a sufficient light amount, high quality and excellent productivity can be obtained. Can be realized.

Further, in this LED display device 31, the pyramid LE mounted on each panel module 34 is used.
The number of D1 is different. That is, a situation arises in which four pyramid-type LEDs 1 are mounted on a certain module, but only one pyramid-type LED 1 is mounted on another panel module. That is, this L
In the ED display device, one pixel may be configured by one pyramid LED 1, or one pixel may be configured by a plurality of pyramid LEDs 1.

In this case, some brightness unevenness may occur between the panel modules. However, since the LED display device 31 is driven by the constant current circuit, the power consumption of each panel module is constant. Therefore, the smaller the number of pyramid-type LEDs 1 mounted on each panel module, the more the pyramid-type LED 1 is loaded, but in terms of energy, if the energy consumption efficiency is constant, each module can obtain the same amount of light. There is no problem in doing so.

Further, in the above LED display device 31, the emission color of the pyramid type LED 1 is not particularly limited and can be appropriately selected according to the application. That is, the LED display device 31 may be configured using only the pyramid-type LED 1 that emits white light, or the pyramid-type LEDs 1 for red, blue, green, etc. may be used individually.
Or use in any combination or in full color L
The ED display device 31 may be configured.

Further, in this LED display device, by using a light-transmissive material for the adhesive layer 36 which becomes the first wiring or the wiring 38 which becomes the second wiring, it is possible to efficiently extract light emission. Can be configured.

The LED display device 31 as described above can be manufactured as follows. First, as shown in FIG. 3, an adhesive layer 36 having the function of the first wiring, which is the lower wiring of the pyramid-type LED 1, is formed on the main surface of the substrate 35 on which the pyramid-type LED 1 is mounted, using a conductive adhesive. . Here, the substrate 35 on which the pyramid-type LED 1 is mounted
The constituent material is not particularly limited, and can be appropriately selected depending on various conditions such as intended use.

Next, the substrate 35 having the adhesive layer 36 formed thereon is
The pyramid-type LED 1 is placed on a substantially flat place so that the adhesive layer 36 is on the upper side, and the pyramid-type LED 1 is mounted on the substrate 35 as shown in FIG. 4, that is, the adhesive layer 36 is formed. It is arranged at a predetermined height corresponding to the position. Then, the pyramid-type LED 1 is naturally dropped on the substrate 35. At this time, the pyramid type LED 1 is naturally dropped in the atmosphere.

When the pyramid-type LED 1 is allowed to fall naturally in the atmosphere, the pyramid-type LED 1 faces various directions as shown in FIG. However, the pyramid LED1
Immediately starts rotating so that the C plane of the pyramid-type LED 1 faces downward. And the pyramid type LED 1 is
As shown in FIG. 6, immediately before falling onto the substrate, the C-plane of the pyramid-type LED 1 faces downward, that is, the C-plane of the pyramid-type LED 1 and the substrate 35 face each other. . As a result, pyramid LE
D1 is a state in which the C-plane of the pyramid-type LED 1 faces downward as shown in FIG.
It drops onto the substrate 35 with the C surface of ED1 and the substrate facing each other. Since the adhesive layer 36 is formed on the substrate 35, the pyramid-type LED dropped on the substrate 35.
1 is fixed to the substrate by the adhesive layer 36 at the dropped position. At this time, the pyramid type LEDs 1 are not arranged on the substrate 35 with some regularity, but
As shown in FIG. 7, they are randomly arranged on the substrate 35 in an arbitrary state.

Next, the pyramid type L in the adhesive layer 36 is used.
For example, irradiation energy of 0.
Electrical connection is made by irradiating with YAG triple wave of ² mJ / cm ² and wavelength of 355 nm and annealing.

Next, as shown in FIG. 14, an insulating resin having a low viscosity is applied on the substrate 35 and the pyramid type LED 1. Here, by using a resin having a low viscosity, the pyramid-type LED 1 can be surely filled with the resin. Then, as shown in FIG. 15, by forming a wiring 38 on the upper side of the pyramid-type LED 1 which is the second wiring from above, electrical connection is made on the upper surface of the pyramid-type LED 1. Here, the width between the wirings is made larger than the size of the pyramid-type LED 1 having the largest size. The panel module 34 is configured as described above, the small unit 32 is configured by tiling the plurality of panel modules 34, and the middle unit 33 is configured by tiling the plurality of small units 32. LED by tiling multiple middle units 33
The display device 31 is configured.

In the method of manufacturing the LED display device as described above, since the adhesive layer 36 is formed on the substrate 35 and the pyramid-type LEDs 1 are scattered on the adhesive layer 36, the pyramid-type LED 1 is mounted on the substrate 35. The pyramid LED 1 can be mounted very easily. That is, it is possible to mount the elements much more easily and in a shorter time than, for example, mounting the elements one by one using a vacuum suction head or the like. Therefore, according to this LED display device manufacturing method, it is possible to efficiently manufacture the LED display device. That is, it can be said that the method for manufacturing the LED display device is a method with good work efficiency and excellent productivity.

In addition, in the method of manufacturing the LED display device, the pyramid-type LED that did not drop on the adhesive layer 36 was used.
1 is not fixed on the substrate 35, and only the pyramid-type LED 1 dropped on the adhesive layer 36 can be fixed on the substrate 35. Therefore, in the method of manufacturing the LED display device, the pyramid-type LED 1 is mounted on the substrate 35.
It is very easy to carry out partial mounting at only the desired positions of. That is, the pyramid type LED 1
By selectively forming the adhesive layer 36 only at the position where the mounting is desired, selective mounting is easily realized. And the pyramid type LED which did not fall on the adhesive layer 36
Since No. 1 is not fixed, it can be easily removed and collected from the substrate 35 by means such as blowing off with wind pressure, flushing with liquid, etc., and can be reused.

In this LED display device mounting method, even when the size of the pyramid-type LED 1 changes, a fluid that becomes an environment for spraying the pyramid-type LED 1 is selected and the viscosity of the fluid is controlled. As a result, it is possible to mount the pyramid-type LED 1 of various sizes. That is, in the above, the pyramid LE
Although D1 is allowed to fall naturally in the atmosphere, the environment in which the pyramid-type LED 1 is allowed to fall naturally may be a fluid that can be handled as a viscous fluid, similar to the above-described element mounting method, a gas, or a liquid. But good.
Then, specifically, in addition to air, that is, the atmosphere, ultrapure water or a liquid containing no solid substance as an impurity can be used. However, as described above, the size of the element is 2
The limit is 0 μm.

In the method of manufacturing the LED display device as described above, the pyramid type LED 1 is preferably a relatively small pyramid type LED 1 having a size of submicron to several microns. Usually, when an image display device is configured using LEDs, it is preferable to use LEDs that are as large as possible in order to earn the amount of light emission. However, when the above-described pyramid-type LED 1 is grown and formed by, for example, a vapor phase growth method, the quality tends to deteriorate as the element grows. When an image display device is constructed using such elements, the quality of the image display device is not good. Further, there is a problem such as yield, and it is very difficult to obtain a relatively large pyramid LED 1 having a size of about several tens of μm. On the other hand, if an image display device is to be configured using LEDs of a relatively small size, the quality of the LEDs is good, but a larger number of LEDs must be used in order to earn the amount of light emission. Since a larger number of LEDs have to be arranged on the substrate, there is a problem that the number of manufacturing steps increases.

However, in this method of manufacturing an LED display device, it is not necessary to arrange the pyramid LEDs 1 in an orderly and accurate manner, and the pyramid LEDs 1 are randomly arranged.
To arrange in any state, that is, pyramidal L
Since it is not necessary to arrange the EDs 1, there is no problem such as an increase in the number of manufacturing steps even if the number of pyramid LEDs 1 used is large. Therefore, in this method for manufacturing an LED display device, by using the pyramid-type LED 1 having a relatively small size of submicron to several microns, an LED display having a sufficient light amount, high quality and excellent productivity is obtained. It is possible to easily manufacture the device.

In the method of manufacturing the LED display device described above, the emission color of the pyramid-type LED 1 used is not particularly limited and can be appropriately selected according to the application. In other words, a pyramid-type LED that emits white light
The LED display device 31 may be configured using only one,
Further, the LED display device 31 may be configured by using each of the red, blue, green, and other pyramid-type LEDs 1 alone or in any combination. Then, when the LED display device 31 is configured by using the pyramidal LEDs 1 having a plurality of emission colors, the pyramid LEDs 1 may be mounted by repeating the above-described operation for each emission color.

[0106]

The device mounting method according to the present invention is a device mounting method for mounting a plurality of devices on a mounting substrate.
The elements are randomly arranged in the fluid by randomly dropping the elements in a fluid.

In the mounting method of an element according to the present invention as described above, since the elements are randomly mounted on the mounting board by naturally dropping the elements on the mounting board, the mounting board can be very easily and in a short time. It is possible to mount the device on top.

Further, the illuminating device according to the present invention has a light emitting surface formed by providing a plurality of light emitting elements on the mounting substrate,
A lighting device which emits light from a light emitting element by supplying a drive current to the light emitting element, wherein the light emitting elements are randomly arranged on the mounting substrate.

In the illuminating device according to the present invention having the above-described structure, the light emitting elements are not regularly arranged on the mounting substrate, but are randomly arranged in an arbitrary state. Therefore, the lighting device according to the present invention does not need to arrange light emitting elements in an orderly manner, and thus is much simpler to manufacture in a shorter time than a conventional lighting device in which light emitting elements are arranged in a predetermined pattern. It is possible for the lighting device to have high productivity.

Further, the method for manufacturing a lighting device according to the present invention has a light emitting surface which is provided with a plurality of light emitting elements on a mounting substrate, and the drive current is supplied to the light emitting elements to cause the light emitting elements. A method of manufacturing a lighting device that emits light, wherein the light emitting elements are randomly arranged on the mounting substrate to form the light emitting surface.

In the method for manufacturing a lighting device according to the present invention configured as described above, the light emitting elements are not arranged regularly on the mounting substrate, but the light emitting elements are randomly arranged in an arbitrary state. Therefore, in the method for manufacturing the lighting device, it is not necessary to arrange the light emitting elements in order,
Compared with a conventional method for manufacturing a lighting device in which light emitting elements are arranged in a predetermined pattern, the lighting device can be manufactured in a much shorter time, and the lighting device can be manufactured efficiently. It is possible.

Further, the image display device according to the present invention is an image display device having a display surface configured by providing light emitting elements of a plurality of emission colors on the mounting substrate, and the light emitting element on the mounting substrate. Are randomly arranged.

In the image display device according to the present invention configured as described above, the light emitting elements are not regularly arranged on the mounting substrate, but are randomly arranged in an arbitrary state. Therefore, in this image display device, since it is not necessary to arrange the light emitting elements in an orderly manner, it is possible to manufacture the image display device much easier and in a shorter time as compared with the conventional image display device in which the light emitting elements are arranged in a predetermined pattern. It is possible that the lighting device has high productivity.

The method of manufacturing an image display device according to the present invention is a method of manufacturing an image display device having a display surface including light emitting elements of a plurality of emission colors on a mounting substrate. The display surface is configured by randomly arranging the light emitting elements on a substrate.

In the method of manufacturing the image display device according to the present invention as described above, the light emitting elements are not arranged regularly on the mounting substrate, but the light emitting elements are randomly arranged in an arbitrary state. Therefore, in the method of manufacturing the image display device, it is not necessary to arrange the light emitting elements in an orderly manner, so that it is much simpler than the conventional method of manufacturing the image display device in which the light emitting elements are arranged in a predetermined pattern, and It is possible to manufacture the image display device in a short time and efficiently manufacture the image display device.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing a configuration example of a pyramid LED.

FIG. 2 is a cross-sectional view showing a state in which a pyramid-type LED is mounted on a substrate.

FIG. 3 is a cross-sectional view showing a state in which an adhesive layer is formed on the main surface of the substrate with an adhesive.

FIG. 4 is a diagram showing a state where the pyramid type LED substrate is arranged at a predetermined height corresponding to a position where an adhesive layer is formed.

FIG. 5 is a diagram showing a state in which a pyramid-type LED naturally falls.

FIG. 6 is a diagram showing a state in which a pyramid-type LED naturally falls.

FIG. 7 is a diagram showing a state in which a pyramid-type LED has dropped onto a substrate.

FIG. 8 is a cross-sectional view showing a configuration example of an LED lighting device.

FIG. 9 is a diagram illustrating a manufacturing process of the LED lighting device, which is a cross-sectional view showing a state in which a resin is applied.

FIG. 10 is a diagram illustrating a manufacturing process of the LED lighting device, which is a cross-sectional view showing a state in which wiring is formed.

FIG. 11 is a cross-sectional view showing a state in which a pyramid-type LED is sealed in a container.

FIG. 12 is a perspective view showing a configuration example of an LED display device.

FIG. 13 is a cross-sectional view showing a panel module.

FIG. 14 is a diagram illustrating a manufacturing process of the LED display device, which is a cross-sectional view showing a state in which a resin is applied.

FIG. 15 is a diagram illustrating a manufacturing process of the LED display device, which is a cross-sectional view showing a state in which wiring is formed.

FIG. 16 is a diagram illustrating a conventional element mounting method.

[Explanation of symbols]

1 Pyramid type LED 11 board 12 Increased adhesion 21 LED module 22 Substrate 23 Adhesive layer 27 resin 28 wiring 31 LED display 35 substrate 36 Adhesive layer 37 resin 38 wiring

   ─────────────────────────────────────────────────── ─── Continued front page    F-term (reference) 5C094 AA14 AA43 AA44 BA25 CA19                       CA24 DA11 DB01 DB04 EA10                       FA01 FA02 FB14                 5F041 AA12 AA31 AA33 AA42 CA04                       CA05 CA08 CA12 CA22 CA23                       CA34 CA40 CA41 CA46 CA49                       CA53 CA57 CA65 CA66 CA77                       CA88 DA01 DA02 DA13 DA14                       DA81 EE11 FF01 FF11                 5G435 AA04 AA17 BB04 CC09 CC12                       HH18 KK05 KK10

Claims (83)

[Claims] 1. A method for mounting an element, in which a plurality of elements are mounted on a mounting board, wherein the element is randomly arranged in the fluid by randomly dropping the element in a fluid. How to mount the device. 2. The element mounting method according to claim 1, wherein the element is a light emitting element. 3. As the light-emitting element, a crystal layer having an S-plane inclined to the main surface of the substrate or a plane substantially equivalent to the S-plane is formed on the substrate and the S-plane or the S-plane is formed. First extending in a plane parallel to the plane substantially equivalent to the plane
3. The device mounting method according to claim 2, wherein a light emitting device formed by forming a conductive type layer, an active layer, and a second conductive type layer on the crystal layer is used. 4. The main surface of the mounting substrate and C of the light emitting element.
4. The element mounting method according to claim 3, wherein the light emitting element is arranged on the mounting substrate in a state of facing the surface. 5. The method for mounting an element according to claim 2, wherein the light emitting element comprises a light emitting element of a plurality of emission colors. 6. The method for mounting an element according to claim 5, wherein the emission colors are red, green and blue. 7. The method for mounting an element according to claim 6, wherein the light emitting element is arranged for each of the emission colors. 8. An adhesive layer is previously formed on the mounting substrate,
The element mounting method according to claim 1, wherein the element is arranged on the adhesive layer, and the element is fixed on the mounting substrate by the adhesive layer. 9. The method of mounting an element according to claim 8, wherein the adhesive layer is partially formed on the mounting substrate. 10. The method for mounting an element according to claim 1, wherein a wiring is formed on the mounting substrate, and the element is arranged on the wiring. 11. The method for mounting an element according to claim 10, wherein the wiring is formed of a conductive adhesive, and the element is fixed on the mounting substrate by the conductive adhesive. 12. The method of mounting an element according to claim 11, wherein after the element is arranged on the mounting substrate, heat treatment is performed on the conductive adhesive. 13. The method for mounting an element according to claim 1, wherein the size of the element is 20 μm or less. 14. The method for mounting an element according to claim 1, wherein the fluid is a gas. 15. The method for mounting an element according to claim 14, wherein the gas is air. 16. The method for mounting an element according to claim 1, wherein the fluid is a liquid. 17. The method for mounting an element according to claim 16, wherein the liquid is ultrapure water. 18. An illuminating device having a light emitting surface comprising a plurality of light emitting elements on a mounting substrate, wherein the light emitting elements are caused to emit light by supplying a drive current to the light emitting elements. A lighting device, wherein the light emitting elements are randomly arranged on a substrate. 19. The light-emitting element forms a crystal layer on a substrate, the crystal layer having an S-plane inclined with respect to the main surface of the substrate or a plane substantially equivalent to the S-plane, and the S-plane or the S-plane. The crystal layer is formed with a first conductivity type layer, an active layer, and a second conductivity type layer extending in a plane parallel to a plane substantially equivalent to the plane. Lighting equipment. 20. The lighting device according to claim 19, wherein the crystal layer has a wurtzite crystal structure. 21. The lighting device according to claim 19, wherein the crystal layer is made of a nitride semiconductor. 22. The lighting device according to claim 21, wherein the nitride semiconductor is a gallium nitride based semiconductor. 23. The lighting device according to claim 19, wherein the crystal layer is provided by selective growth on the substrate via a base growth layer. 24. The lighting device according to claim 23, wherein the selective growth is performed by selectively removing the underlying growth layer. 25. The lighting device according to claim 23, wherein the selective growth is performed by utilizing an opening of a mask layer that is selectively formed. 26. The lighting device according to claim 25, wherein the crystal layer is one that is selectively grown so as to spread laterally from the opening of the mask layer. 27. The lighting device according to claim 19, wherein the main surface of the substrate is a C + surface. 28. When the S-plane formed on the substrate or a plane substantially equivalent to the S-plane is a part of the crystal layer, current injection into the active layer is performed on the S-plane. 20. The lighting device according to claim 19, wherein the lighting device is made only. 29. The lighting device according to claim 18, wherein the light emitting element is arranged on the mounting substrate with a main surface of the mounting substrate and a C surface of the light emitting element facing each other. . 30. An adhesive layer is formed on the mounting substrate,
The lighting device according to claim 18, wherein the light emitting element is fixed on the mounting board by the adhesive layer by disposing the light emitting element on the adhesive layer. 31. The lighting device according to claim 30, wherein the adhesive layer is partially formed on the mounting substrate. 32. The lighting device according to claim 18, wherein a wiring is formed on the mounting substrate, and the light emitting element is arranged on the wiring. 33. The lighting device according to claim 32, wherein the wiring is formed of a conductive adhesive, and the light emitting element is fixed on the mounting substrate by the conductive adhesive. 34. The lighting device according to claim 18, wherein the size of the light emitting element is 20 μm or less. 35. The plurality of light emitting elements are red, green,
19. The light-emitting device according to claim 18, which comprises three emission colors of blue.
Illumination device described. 36. A method of manufacturing a lighting device, comprising a light emitting surface having a plurality of light emitting elements on a mounting substrate, and supplying a drive current to the light emitting elements to cause the light emitting elements to emit light. A method for manufacturing a lighting device, wherein the light emitting elements are randomly arranged on the mounting substrate to form the light emitting surface. 37. As the light-emitting element, a crystal layer having an S-plane inclined to the main surface of the substrate or a plane substantially equivalent to the S-plane is formed on the substrate, and the S-plane or the S-plane is formed. Using a light emitting device formed by forming a first conductivity type layer, an active layer, and a second conductivity type layer extending in a plane parallel to a plane substantially equivalent to the plane in the crystal layer, 37. The method for manufacturing a lighting device according to claim 36, wherein the light emitting element is arranged on the mounting substrate by allowing the light emitting element to drop naturally in a fluid. 38. The method of manufacturing an illumination device according to claim 37, wherein the fluid is gas. 39. The method for manufacturing a lighting device according to claim 38, wherein the gas is air. 40. The method for manufacturing a lighting device according to claim 37, wherein the fluid is a liquid. 41. The method of manufacturing an illumination device according to claim 40, wherein the liquid is ultrapure water. 42. The method of manufacturing an illumination device according to claim 37, wherein the light emitting element is arranged on the mounting substrate in a state where a main surface of the mounting substrate and a C surface of the light emitting element face each other. 43. The method for manufacturing a lighting device according to claim 37, wherein the size of the light emitting element is 20 μm or less. 44. An adhesive layer is previously formed on the mounting substrate, the light emitting element is arranged on the adhesive layer, and the light emitting element is fixed on the mounting substrate by the adhesive layer. 36. The manufacturing method of the illuminating device of 36. 45. The method of manufacturing an illumination device according to claim 44, wherein the adhesive layer is partially formed on the mounting substrate. 46. The method of manufacturing an illumination device according to claim 36, wherein wiring is formed on the mounting substrate, and the light emitting element is arranged on the wiring. 47. The method of manufacturing an illumination device according to claim 46, wherein the wiring is formed by a conductive adhesive, and the light emitting element is fixed on the mounting substrate by the conductive adhesive. 48. The method of manufacturing an illumination device according to claim 47, wherein after the light emitting element is arranged on the mounting substrate, the conductive adhesive is heat-treated. 49. The plurality of light emitting elements are red, green,
37. The method for manufacturing a lighting device according to claim 36, wherein the lighting device is made of any one of elements emitting blue light or any combination thereof. 50. The method of manufacturing an illumination device according to claim 37, wherein the light emitting element is arranged for each of the emission colors. 51. An image display device having a display surface comprising light emitting elements of a plurality of emission colors on a mounting substrate, wherein the light emitting elements are randomly arranged on the mounting substrate. Characteristic image display device. 52. The light emitting device forms a crystal layer on a substrate, the crystal layer having an S plane inclined with respect to a main surface of the substrate or a plane substantially equivalent to the S plane, and the S plane or the S plane. 52. A layer of the first conductivity type, an active layer, and a layer of the second conductivity type, which extend in a plane parallel to a plane substantially equivalent to the plane, are formed in the crystal layer. Image display device. 53. The image display device according to claim 52, wherein the crystal layer has a wurtzite crystal structure. 54. The image display device according to claim 52, wherein the crystal layer is made of a nitride semiconductor. 55. The image display device according to claim 54, wherein the nitride semiconductor is a gallium nitride based semiconductor. 56. The image display device according to claim 52, wherein the crystal layer is provided by selective growth on the substrate via an underlayer growth layer. 57. The image display device according to claim 56, wherein the selective growth is performed by selectively removing the underlying growth layer. 58. The image display device according to claim 56, wherein the selective growth is performed by utilizing the openings of the mask layer selectively formed. 59. The image display device according to claim 58, wherein the crystal layer is one that is selectively grown so as to spread laterally from the opening of the mask layer. 60. The image display device according to claim 51, wherein the main surface of the substrate is a C + surface. 61. When the S-plane formed on the substrate or a plane substantially equivalent to the S-plane is a part of the crystal layer, current injection into the active layer is performed on the S-plane. 52. The image display device according to claim 51, wherein 62. The image display according to claim 51, wherein the light emitting element is arranged on the mounting substrate with a main surface of the mounting substrate and a C surface of the light emitting element facing each other. apparatus. 63. An adhesive layer is formed on the mounting substrate,
52. The image display device according to claim 51, wherein the light emitting element is fixed on the mounting substrate by the adhesive layer by disposing the light emitting element on the adhesive layer. 64. The image display device according to claim 63, wherein the adhesive layer is partially formed on the mounting substrate. 65. The image display device according to claim 51, wherein a wiring is formed on the mounting substrate, and the light emitting element is arranged on the wiring. 66. The wiring according to claim 66, wherein the wiring is formed by a conductive adhesive, and the light emitting element is fixed on the mounting substrate by the conductive adhesive.
The image display device described. 67. The image display device according to claim 51, wherein the size of the light emitting element is 20 μm or less. 68. The plurality of light emitting elements are red, green,
6. The light emitting device according to claim 5, which is composed of three emission colors of blue.
1. The image display device according to 1. 69. A method of manufacturing an image display device having a display surface including light emitting elements of a plurality of emission colors on a mounting substrate, wherein the light emitting elements are randomly arranged on the mounting substrate. A method for manufacturing an image display device, comprising the above display surface. 70. As the light-emitting element, a crystal layer having an S-plane inclined to the main surface of the substrate or a plane substantially equivalent to the S-plane is formed on the substrate, and the S-plane or the S-plane is formed. Using a light emitting device formed by forming a first conductivity type layer, an active layer, and a second conductivity type layer extending in a plane parallel to a plane substantially equivalent to the plane in the crystal layer, 70. The method for manufacturing an image display device according to claim 69, wherein the light emitting element is arranged on the mounting substrate by allowing the light emitting element to drop naturally in a fluid. 71. The method of manufacturing an image display device according to claim 70, wherein the fluid is gas. 72. The method of manufacturing an image display device according to claim 71, wherein the gas is air. 73. The method of manufacturing an image display device according to claim 70, wherein the fluid is a liquid. 74. The method of manufacturing an image display device according to claim 73, wherein the liquid is ultrapure water. 75. The method of manufacturing an image display device according to claim 70, wherein the light emitting element is arranged on the mounting substrate in a state where a main surface of the mounting substrate and a C surface of the light emitting element face each other. . 76. The method of manufacturing an image display device according to claim 70, wherein the size of the light emitting element is 20 μm or less. 77. An adhesive layer is previously formed on the mounting substrate, the light emitting element is arranged on the adhesive layer, and the light emitting element is fixed on the mounting substrate by the adhesive layer. 69. A method for manufacturing an image display device described in 69. 78. The method of manufacturing an image display device according to claim 77, wherein the adhesive layer is partially formed on the mounting substrate. 79. The method of manufacturing an image display device according to claim 69, wherein wiring is formed on the mounting substrate, and the light emitting element is arranged on the wiring. 80. The method of manufacturing an image display device according to claim 79, wherein the wiring is formed of a conductive adhesive, and the light emitting element is fixed on the mounting substrate by the conductive adhesive. 81. The method of manufacturing an image display device according to claim 80, wherein after the light emitting elements are arranged on the mounting substrate, the conductive adhesive is heat-treated. 82. The plurality of light emitting elements are red, green,
70. The method of manufacturing an image display device according to claim 69, wherein the method comprises any one of three emission colors of blue or any combination thereof. 83. The method of manufacturing an image display device according to claim 82, wherein the light emitting element is arranged for each of the emission colors.