JP2003078247A - Wiring board and method of manufacturing the same - Google Patents
Wiring board and method of manufacturing the sameInfo
- Publication number
- JP2003078247A JP2003078247A JP2001262509A JP2001262509A JP2003078247A JP 2003078247 A JP2003078247 A JP 2003078247A JP 2001262509 A JP2001262509 A JP 2001262509A JP 2001262509 A JP2001262509 A JP 2001262509A JP 2003078247 A JP2003078247 A JP 2003078247A
- Authority
- JP
- Japan
- Prior art keywords
- insulating resin
- resin layer
- hole
- wiring conductor
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 229920005989 resin Polymers 0.000 claims abstract description 194
- 239000011347 resin Substances 0.000 claims abstract description 194
- 239000004020 conductor Substances 0.000 claims abstract description 176
- 229910052751 metal Inorganic materials 0.000 claims abstract description 51
- 239000002184 metal Substances 0.000 claims abstract description 51
- 239000010409 thin film Substances 0.000 claims abstract description 51
- 230000000149 penetrating effect Effects 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 34
- 238000010030 laminating Methods 0.000 claims description 4
- 238000007747 plating Methods 0.000 description 26
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 23
- 229910052802 copper Inorganic materials 0.000 description 19
- 239000010949 copper Substances 0.000 description 19
- 239000010408 film Substances 0.000 description 15
- 238000012545 processing Methods 0.000 description 14
- 229920001187 thermosetting polymer Polymers 0.000 description 11
- 238000000151 deposition Methods 0.000 description 10
- 239000003822 epoxy resin Substances 0.000 description 8
- 229920000647 polyepoxide Polymers 0.000 description 8
- 239000000243 solution Substances 0.000 description 5
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 4
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 239000011889 copper foil Substances 0.000 description 4
- 229920003192 poly(bis maleimide) Polymers 0.000 description 4
- 238000007788 roughening Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 238000001723 curing Methods 0.000 description 3
- 239000004744 fabric Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000003365 glass fiber Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920001955 polyphenylene ether Polymers 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- JZCCFEFSEZPSOG-UHFFFAOYSA-L copper(II) sulfate pentahydrate Chemical compound O.O.O.O.O.[Cu+2].[O-]S([O-])(=O)=O JZCCFEFSEZPSOG-UHFFFAOYSA-L 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- UEUXEKPTXMALOB-UHFFFAOYSA-J tetrasodium;2-[2-[bis(carboxylatomethyl)amino]ethyl-(carboxylatomethyl)amino]acetate Chemical class [Na+].[Na+].[Na+].[Na+].[O-]C(=O)CN(CC([O-])=O)CCN(CC([O-])=O)CC([O-])=O UEUXEKPTXMALOB-UHFFFAOYSA-J 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
(57)【要約】
【課題】 スタックトビア構造において、電気的接続面
積が広く配線導体の高密度化ができない。
【解決手段】 上面に第1配線導体2aが形成された第1
絶縁樹脂層1aと上面に第2配線導体2bが形成された第2
絶縁樹脂層1bと第3絶縁樹脂層1cとが第1・第2配線導
体2a・2bの一部が上下に重なるようにして順に積層され
るとともに、第1配線導体2a上に位置して第2絶縁樹脂
層1b・第2配線導体2bを貫通した第1貫通孔3aとこの第
1貫通孔3aの直上に位置して第3絶縁樹脂層1cを貫通し
た第1貫通孔3aよりも断面の大きな第2貫通孔3bとが形
成され、かつ第1・第2貫通孔3a・3bの内壁から第3絶
縁樹脂層1cの上面にかけて金属薄膜4が形成されて第1
配線導体2aと第2配線導体2bと第3絶縁樹脂層1cの上面
に形成された金属薄膜4から成る第3配線導体2cとが接
続されている配線基板。
(57) [Summary] [PROBLEMS] In a stacked via structure, an electrical connection area is large, and the density of wiring conductors cannot be increased. A first wiring conductor having a first wiring conductor formed on an upper surface thereof is provided.
A second wiring conductor 2b having an insulating resin layer 1a and a second wiring conductor 2b formed on the upper surface;
The insulating resin layer 1b and the third insulating resin layer 1c are sequentially laminated so that a part of the first and second wiring conductors 2a and 2b are vertically overlapped. The first through hole 3a penetrating through the second insulating resin layer 1b and the second wiring conductor 2b, and has a cross section that is located immediately above the first through hole 3a and through the first through hole 3a that penetrates through the third insulating resin layer 1c. A large second through hole 3b is formed, and a metal thin film 4 is formed from the inner walls of the first and second through holes 3a and 3b to the upper surface of the third insulating resin layer 1c.
A wiring board to which a wiring conductor 2a, a second wiring conductor 2b, and a third wiring conductor 2c formed of a metal thin film 4 formed on an upper surface of a third insulating resin layer 1c are connected.
Description
【0001】[0001]
【発明の属する技術分野】本発明は、半導体素子等の電
子部品を搭載するために用いられる配線基板およびその
製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring board used for mounting electronic parts such as semiconductor elements and a method for manufacturing the same.
【0002】[0002]
【従来の技術】一般に、現在の電子機器は、移動体通信
機器に代表されるように小型・薄型・軽量・高性能・高
機能・高品質・高信頼性が要求されてきており、このよ
うな電子機器に搭載される電子装置も小型・高密度化が
要求されるようになってきている。そのため、電子装置
を構成する配線基板にも小型・薄型・多端子化が求めら
れてきており、それを実現するために信号導体等の配線
導体の幅を細くするとともにその間隔を狭くし、さらに
配線導体の多層化により高密度配線化が図られている。2. Description of the Related Art Generally, current electronic devices are required to be small, thin, lightweight, high-performance, high-performance, high-quality and highly reliable as represented by mobile communication devices. Electronic devices mounted on various electronic devices are also required to be small and have high density. Therefore, wiring boards that make up electronic devices are also required to be small, thin, and have multiple terminals. To achieve this, the widths of wiring conductors such as signal conductors are made narrower and the intervals between them are reduced. High-density wiring is achieved by multilayering wiring conductors.
【0003】このような高密度配線が可能な配線基板と
して、ビルドアップ法を採用して製作された配線基板が
知られている。ビルドアップ配線基板は、例えば、ガラ
スクロスやアラミド不布織等の補強材に耐熱性や耐薬品
性を有するエポキシ樹脂に代表される熱硬化性樹脂を含
浸させて硬化した芯体絶縁層表面に配線導体を被着形成
するとともに、エポキシ樹脂等の熱硬化性樹脂から成る
樹脂ワニスを塗布して加熱硬化させて絶縁樹脂層を形成
した後、配線導体上の絶縁樹脂層にレーザで径が50〜20
0μm程度の貫通孔を穿設し、しかる後、貫通孔内壁お
よび絶縁樹脂層表面を過マンガン酸カリウム溶液等の粗
化液で化学粗化し、さらにセミアディティブ法を用いて
絶縁樹脂層表面および貫通孔内壁に銅の導体膜を被着し
て配線導体および貫通導体を形成し、その上に絶縁樹脂
層や貫通導体・配線導体の形成を複数回繰り返すことに
よって製作される。A wiring board manufactured by adopting a build-up method is known as a wiring board capable of such high-density wiring. Build-up wiring board is, for example, a core insulation layer surface cured by impregnating a reinforcing material such as glass cloth or aramid non-woven fabric with a thermosetting resin typified by an epoxy resin having heat resistance and chemical resistance. After the wiring conductor has been deposited, a resin varnish made of thermosetting resin such as epoxy resin is applied and cured by heating to form an insulating resin layer. ~ 20
After forming a through hole of about 0 μm, the inner wall of the through hole and the surface of the insulating resin layer are chemically roughened with a roughening solution such as potassium permanganate solution, and then the surface of the insulating resin layer and the through hole are penetrated by using a semi-additive method. It is manufactured by depositing a copper conductor film on the inner wall of the hole to form a wiring conductor and a through conductor, and forming an insulating resin layer and a through conductor / wiring conductor thereon a plurality of times.
【0004】また最近では、ビルドアップ配線基板をよ
り高密度化するために、配線導体の幅および間隔を狭め
たり、貫通孔の孔径を小さくしてこれらの間隔を狭める
ことも行われており、さらに、貫通導体を垂直方向に配
列して成るスタックトビア構造の配線基板も実用化され
ている。Recently, in order to further increase the density of the build-up wiring board, the width and spacing of the wiring conductors have been reduced, and the diameter of the through holes has been reduced to reduce the spacing. Further, a wiring board having a stacked via structure in which through conductors are arranged in the vertical direction has been put into practical use.
【0005】このようなスタックトビア構造の配線基板
として、特開2001−156450号公報には、平面状の基板
と、この基板表面に形成された配線回路と、配線回路を
含む基板上に積層され一部に配線回路まで貫通する第1
ビアホールが形成された第1絶縁樹脂層と、第1ビアホ
ールに形成される第1ビアと、第1絶縁樹脂層上に積層
され一部に第1ビアの底面まで貫通する第2ビアホール
が形成された第2絶縁樹脂層と、第2ビアホールに形成
される第2ビアとを備え、第2ビアホールは、第1ビア
の内周側面と第2ビアの外周側面との間に間隔が生じ、
かつ、少なくとも第1ビアの内側底面と第2ビアの外側
側面とが接触するようなサイズを有するビルドアップ多
層プリント配線板が提案されている。As a wiring board having such a stacked via structure, Japanese Unexamined Patent Publication No. 2001-156450 discloses a planar board, a wiring circuit formed on the surface of the board, and a wiring board including the wiring circuit. The first part that penetrates to the wiring circuit
A first insulating resin layer having a via hole formed therein, a first via formed in the first via hole, and a second via hole formed on the first insulating resin layer and partially penetrating to the bottom surface of the first via are formed. A second insulating resin layer and a second via formed in the second via hole, and the second via hole has a space between the inner peripheral side surface of the first via and the outer peripheral side surface of the second via,
A build-up multilayer printed wiring board having a size such that at least the inner bottom surface of the first via and the outer side surface of the second via contact each other has been proposed.
【0006】[0006]
【発明が解決しようとする課題】しかしながら、特開20
01−156450号公報に記載されたビルドアップ多層プリン
ト配線板は、第2ビアを第1ビアの内側に形成している
ことから、配線回路を高密化するために第1ビアホール
の開口部の径を小さくすると、第2ビアの底面と第1ビ
アとの接続面積が小さくなり、温度サイクル試験(TC
T)等の耐熱疲労性試験において、絶縁樹脂層とビアと
の熱膨張差による熱応力が両者の接続部に集中して断線
不良を発生させてしまい、その結果、配線板の高密度化
ができないという問題点を、また、絶縁樹脂層を複数積
層した場合、積層数に応じて第1ビアホールの開口部の
径がかなり大きなものとなってしまい、配線板が大型化
してしまうという問題点を有していた。[Problems to be Solved by the Invention]
In the build-up multilayer printed wiring board described in Japanese Patent Publication No. 01-156450, the second via is formed inside the first via, so the diameter of the opening of the first via hole is increased in order to increase the density of the wiring circuit. If the value is decreased, the connection area between the bottom surface of the second via and the first via becomes smaller, and the temperature cycle test (TC
In a thermal fatigue resistance test such as T), the thermal stress due to the difference in thermal expansion between the insulating resin layer and the via is concentrated in the connection portion between the two, resulting in disconnection failure, which results in higher density of the wiring board. In addition, when a plurality of insulating resin layers are laminated, the diameter of the opening portion of the first via hole becomes considerably large according to the number of laminated layers, and the wiring board becomes large. Had.
【0007】また、上記のビルドアップ多層プリント配
線板の製造方法では、第1ビアを形成した後に第2絶縁
樹脂層を形成し、そしてさらに第2ビアホールおよび第
2ビアを形成しなければならず、そのため、製造工程が
煩雑になってしまうという問題点を有していた。In the method of manufacturing the build-up multilayer printed wiring board described above, the second insulating resin layer must be formed after forming the first via, and then the second via hole and the second via must be formed. Therefore, there is a problem that the manufacturing process becomes complicated.
【0008】本発明はかかる従来技術の問題点に鑑み完
成されたものであり、その目的は、貫通導体を垂直に配
列したスタックトビア構造において、電気的な接続が必
要十分で、かつ配線導体の高密度化が達成できるととも
に、接続信頼性の高い配線基板およびその製造方法を提
供することにある。The present invention has been completed in view of the above problems of the prior art, and an object thereof is a stacked via structure in which through conductors are vertically arrayed, in which electrical connection is necessary and sufficient and a wiring conductor An object of the present invention is to provide a wiring board which can achieve high density and has high connection reliability, and a manufacturing method thereof.
【0009】[0009]
【課題を解決するための手段】本発明の配線基板は、上
面に第1の配線導体が形成された第1の絶縁樹脂層と上
面に第2の配線導体が形成された第2の絶縁樹脂層と第
3の絶縁樹脂層とが第1および第2の配線導体の一部が
上下に重なるようにして順に積層されるとともに、第1
の配線導体上に位置して第2の絶縁樹脂層および第2の
配線導体を貫通した第1の貫通孔とこの第1の貫通孔の
直上に位置して第3の絶縁樹脂層を貫通した第1の貫通
孔よりも断面の大きな第2の貫通孔とが形成され、かつ
第1および第2の貫通孔の内壁から第3の絶縁樹脂層の
上面にかけて金属薄膜が形成されて第1の配線導体と第
2の配線導体と第3の絶縁樹脂層の上面に形成された金
属薄膜から成る第3の配線導体とが接続されていること
を特徴とするものである。A wiring board according to the present invention comprises a first insulating resin layer having a first wiring conductor formed on an upper surface thereof and a second insulating resin layer having a second wiring conductor formed on an upper surface thereof. The first insulating layer and the third insulating resin layer are sequentially laminated so that the first and second wiring conductors partially overlap with each other, and
A first through hole penetrating the second insulating resin layer and the second insulating resin layer located on the wiring conductor, and a third insulating resin layer penetrating immediately above the first through hole. A second through hole having a cross section larger than that of the first through hole is formed, and a metal thin film is formed from the inner walls of the first and second through holes to the upper surface of the third insulating resin layer to form the first through hole. The wiring conductor, the second wiring conductor, and the third wiring conductor formed of a metal thin film formed on the upper surface of the third insulating resin layer are connected to each other.
【0010】また、本発明の配線基板は、上記の構成に
おいて、第1の貫通孔の断面の直径が第2の貫通孔の断
面の直径の0.2〜0.9倍であることを特徴とするものであ
る。Further, the wiring board of the present invention is characterized in that, in the above structure, the diameter of the cross section of the first through hole is 0.2 to 0.9 times the diameter of the cross section of the second through hole. is there.
【0011】本発明の配線基板の製造方法は、第1の絶
縁樹脂層の上面に第1の配線導体を形成する工程と、第
1の絶縁樹脂層および第1の配線導体の上に第2の絶縁
樹脂層を積層する工程と、第2の絶縁樹脂層上に第1の
配線導体の上に位置する開口部を有する第2の配線導体
を形成する工程と、第2の絶縁樹脂層および第2の配線
導体の上に第3の絶縁樹脂層を積層する工程と、第2の
絶縁樹脂層に第2の配線導体の開口部と略同形状の断面
の第1の貫通孔を形成するとともに、第3の絶縁樹脂層
に第1の貫通孔の直上に位置する第1の貫通孔の断面よ
り大きな断面の第2の貫通孔を形成する工程と、第1貫
通孔および第2貫通孔の内壁から第3の絶縁樹脂層の上
面にかけて金属薄膜を被着して、第3の絶縁樹脂層の上
面に金属薄膜から成る第3の配線導体を形成するととも
に第1乃至第3の配線導体を金属薄膜で接続する工程と
を具備することを特徴とするものである。According to the method of manufacturing a wiring board of the present invention, the step of forming the first wiring conductor on the upper surface of the first insulating resin layer and the second step on the first insulating resin layer and the first wiring conductor are performed. Laminating the insulating resin layer, forming a second wiring conductor having an opening located above the first wiring conductor on the second insulating resin layer, the second insulating resin layer, and A step of laminating a third insulating resin layer on the second wiring conductor, and forming a first through hole having a cross section of substantially the same shape as the opening of the second wiring conductor in the second insulating resin layer. At the same time, a step of forming a second through hole having a cross section larger than the cross section of the first through hole located immediately above the first through hole in the third insulating resin layer, the first through hole and the second through hole A metal thin film from the inner wall of the third insulating resin layer to the upper surface of the third insulating resin layer, and the metal thin film is applied to the upper surface of the third insulating resin layer. That the first to third wiring conductors to form a third wiring conductor is characterized in that it comprises the step of connecting a metal thin film.
【0012】本発明の配線基板によれば、第1の配線導
体上に第1の貫通孔を形成して第1の配線導体を第1の
貫通孔内に露出させるとともに第1の貫通孔の直上に第
1の貫通孔の断面よりも大きな第2の貫通孔を形成して
第2の配線導体を第2の貫通孔内に露出させ、そして、
第1および第2の貫通孔の内壁から第3の絶縁樹脂層の
上面にかけて金属薄膜を形成して第1の配線導体の露出
した部分と第2の配線導体の露出した部分と第3の絶縁
樹脂層の上面に形成された金属薄膜から成る第3の配線
導体とを接続したことから、第1および第2の配線導体
と金属薄膜との接合面積が広いものとなり、その結果、
第1および第2の配線導体と第3の配線導体とを強固に
接続することができ、配線基板を高密度化するために第
1の貫通孔を微細化したとしても接続信頼性に優れた配
線基板とすることができる。According to the wiring board of the present invention, the first through hole is formed on the first wiring conductor so that the first wiring conductor is exposed in the first through hole and the first through hole is formed. A second through hole having a larger cross section than the first through hole is formed immediately above to expose the second wiring conductor in the second through hole, and
A metal thin film is formed from the inner walls of the first and second through holes to the upper surface of the third insulating resin layer to expose the exposed portion of the first wiring conductor, the exposed portion of the second wiring conductor, and the third insulation. Since the third wiring conductor formed of the metal thin film formed on the upper surface of the resin layer is connected, the bonding area between the first and second wiring conductors and the metal thin film becomes large, and as a result,
The first and second wiring conductors can be firmly connected to the third wiring conductor, and the connection reliability is excellent even if the first through holes are miniaturized in order to increase the density of the wiring board. It can be a wiring board.
【0013】また、本発明の配線基板によれば、第1の
貫通孔の断面の直径を第2の貫通孔の断面の直径の0.2
〜0.9倍としたことから、第2の貫通孔内に露出する第
2の配線導体の面積が十分広いものとなり、貫通孔内に
形成される金属薄膜と第2の配線導体との接合を強固な
ものとすることができる。さらに、貫通孔を上下に複数
形成してスタックトビアを形成した場合においても、一
番上に形成される貫通孔の断面の直径が一番下に形成さ
れる貫通孔の断面の直径に較べて非常に大きなものとな
ることはなく、その結果、配線基板が大型化してしまう
こともない。Further, according to the wiring board of the present invention, the diameter of the cross section of the first through hole is 0.2 times the diameter of the cross section of the second through hole.
Since it is set to 0.9 times, the area of the second wiring conductor exposed in the second through hole becomes sufficiently large, and the bonding between the metal thin film formed in the through hole and the second wiring conductor is strengthened. It can be anything. Further, even when a plurality of through holes are formed in the upper and lower sides to form a stacked via, the diameter of the cross section of the through hole formed at the top is smaller than the diameter of the cross section of the through hole formed at the bottom. It does not become very large, and as a result, the wiring board does not become large.
【0014】本発明の配線基板の製造方法によれば、第
1の絶縁樹脂層に第2の絶縁樹脂層と第3の絶縁樹脂層
とを積層後、第2の樹脂絶縁層および第3の絶縁樹脂層
にそれぞれ第1の貫通孔および第2の貫通孔を形成する
ことから、工程が煩雑になることはなく、工程を簡素化
できる。また、第2の樹脂絶縁層上の第2の配線導体に
開口部を形成するとともに、第2の樹脂絶縁層に第2の
配線導体の開口部と略同形状の断面の第1の貫通孔を形
成することから、レーザで絶縁樹脂層に貫通孔を形成す
る際に配線導体を貫通させる必要がなく、その結果、レ
ーザによる加工条件を絶縁樹脂層を加工する条件にのみ
に設定すればよく、工程を短縮することができる。According to the method for manufacturing a wiring board of the present invention, after the second insulating resin layer and the third insulating resin layer are laminated on the first insulating resin layer, the second resin insulating layer and the third insulating resin layer are formed. Since the first through hole and the second through hole are formed in the insulating resin layer, the process does not become complicated and the process can be simplified. In addition, an opening is formed in the second wiring conductor on the second resin insulating layer, and the first through hole having a cross section of substantially the same shape as the opening of the second wiring conductor is formed in the second resin insulating layer. Therefore, it is not necessary to penetrate the wiring conductor when forming the through hole in the insulating resin layer by the laser, and as a result, the laser processing conditions may be set only to the conditions for processing the insulating resin layer. The process can be shortened.
【0015】[0015]
【発明の実施の形態】次に、本発明の配線基板を添付の
図面に基づいて詳細に説明する。図1は、本発明の配線
基板の実施の形態の一例を示す断面図であり、図2は、
図1の要部拡大断面図である。これらの図において、1
は絶縁樹脂層、2は配線導体、3は貫通孔、4は金属薄
膜であり、主にこれらで本発明の配線基板5が構成され
る。なお、本例では芯体と成る第1の絶縁樹脂層1aの
上下面にそれぞれ第2の絶縁樹脂層1bと第3の絶縁樹
脂層1cとを積層した例を示している。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, a wiring board of the present invention will be described in detail with reference to the accompanying drawings. 1 is a sectional view showing an example of an embodiment of a wiring board of the present invention, and FIG.
It is a principal part expanded sectional view of FIG. In these figures, 1
Is an insulating resin layer, 2 is a wiring conductor, 3 is a through hole, 4 is a metal thin film, and these mainly constitute the wiring board 5 of the present invention. In this example, an example is shown in which the second insulating resin layer 1b and the third insulating resin layer 1c are laminated on the upper and lower surfaces of the first insulating resin layer 1a serving as the core.
【0016】芯体と成る第1の絶縁樹脂層1aは、絶縁
樹脂層1b・1cの支持体としての機能を有するととも
に配線基板5に強度を付与する機能を有し、厚みが0.3
〜1.5mm程度の板状である。このような第1の絶縁樹
脂層1aは、例えばガラス繊維を縦横に織り込んだガラ
スクロスにエポキシ樹脂やビスマレイミドトリアジン樹
脂等の熱硬化性樹脂を含浸させて成り、その上面から下
面にかけて直径が0.1〜1.0mm程度の複数のスルーホー
ル11を有している。そして、その上下面には第1の配線
導体2aが、各スルーホール11の内壁には銅めっき膜12
が被着されており、上下面の第1の配線導体2aがスル
ーホール11の内壁に形成された銅めっき膜12を介して電
気的に接続されている。The first insulating resin layer 1a serving as a core has a function as a support for the insulating resin layers 1b and 1c and a function of imparting strength to the wiring board 5, and has a thickness of 0.3.
It has a plate shape of about 1.5 mm. Such a first insulating resin layer 1a is formed, for example, by impregnating a glass cloth in which glass fibers are woven vertically and horizontally with a thermosetting resin such as an epoxy resin or a bismaleimide triazine resin and having a diameter of 0.1 from the upper surface to the lower surface. It has a plurality of through holes 11 of about 1.0 mm. Then, the first wiring conductor 2a is provided on the upper and lower surfaces thereof, and the copper plating film 12 is provided on the inner wall of each through hole 11.
And the first wiring conductors 2a on the upper and lower surfaces are electrically connected via the copper plating film 12 formed on the inner wall of the through hole 11.
【0017】このような第1の絶縁樹脂層1aには、未
硬化の絶縁樹脂層用のシートの上下全面に厚みが3〜50
μmの銅箔を被着しておくとともにこの銅箔をシートの
硬化後にエッチング加工して所定のパターンに形成する
ことにより第1の配線導体2aが、また、上記シートを
熱硬化させた後、これに上面から下面にかけてドリル加
工を施すことによりスルーホール11が、さらに、スルー
ホール11内壁にめっき法により厚みが3〜50μm程度の
銅めっきを析出させて被着することにより銅めっき膜12
が形成される。なお、第1の配線導体2aは、スルーホ
ール11の内壁に銅めっき膜12を被着形成する際に、めっ
き法により銅めっき膜12と一体的に形成してもよい。The first insulating resin layer 1a as described above has a thickness of 3 to 50 on the entire upper and lower surfaces of the uncured insulating resin layer sheet.
After the copper foil having a thickness of μm is applied and the copper foil is cured and then etched to form a predetermined pattern, the first wiring conductor 2a is formed, and after the sheet is thermally cured, The through hole 11 is formed by drilling from the upper surface to the lower surface, and the copper plating film 12 is formed by depositing copper plating having a thickness of about 3 to 50 μm on the inner wall of the through hole 11 by plating.
Is formed. The first wiring conductor 2a may be integrally formed with the copper plating film 12 by a plating method when the copper plating film 12 is formed on the inner wall of the through hole 11.
【0018】さらに、第1の絶縁樹脂層1aは、スルー
ホール11の内部にエポキシ樹脂やビスマレイミドトリア
ジン樹脂等の熱硬化性樹脂から成る樹脂柱13が充填され
ている。樹脂柱13は、スルーホール11を塞ぐことにより
スルーホール11の直上および直下に第2および第3の絶
縁樹脂層1b・1cを形成可能とするためのものであ
り、未硬化のペースト状の熱硬化性樹脂をスルーホール
11内にスクリーン印刷法により充填し、これを熱硬化さ
せた後、その上下面を略平坦に研磨することにより形成
される。そして、この樹脂柱13を含む第1の絶縁樹脂層
1aの上下面に第2および第3の絶縁樹脂層1b・1c
が積層されている。Further, in the first insulating resin layer 1a, resin columns 13 made of a thermosetting resin such as epoxy resin or bismaleimide triazine resin are filled in the through holes 11. The resin column 13 is for closing the through hole 11 so that the second and third insulating resin layers 1b and 1c can be formed immediately above and below the through hole 11, and the uncured paste-like heat is applied. Through hole for curable resin
It is formed by filling the inside of 11 by a screen printing method, thermally curing it, and polishing the upper and lower surfaces thereof to be substantially flat. Then, the second and third insulating resin layers 1b and 1c are formed on the upper and lower surfaces of the first insulating resin layer 1a including the resin columns 13.
Are stacked.
【0019】第2および第3の絶縁樹脂層1b・1c
は、それぞれの厚みが20〜60μm程度で、エポキシ樹脂
や変性ポリフェニレンエーテル樹脂等の熱硬化性樹脂と
粒径が0.01〜2μmで含有量が10〜50重量%のシリカや
アルミナ・窒化アルミニウム等の無機絶縁フィラーとか
ら成る。Second and third insulating resin layers 1b and 1c
Each has a thickness of about 20 to 60 μm, a thermosetting resin such as epoxy resin or modified polyphenylene ether resin, and a particle size of 0.01 to 2 μm and a content of 10 to 50% by weight such as silica, alumina, aluminum nitride, etc. It consists of an inorganic insulating filler.
【0020】第2および第3の絶縁樹脂層1b・1c
は、第2および第3の配線導体2b・2cを高密度に配
線するための絶縁間隔を提供するためのものであり、そ
して、第2の配線導体2bと第3の配線導体2cとを貫
通孔3の内壁に被着形成した金属薄膜4を介して電気的
に接続することにより高密度配線を立体的に形成可能と
している。このような第2および第3の絶縁樹脂層1b
・1cは、厚みが20〜60μm程度の未硬化の熱硬化性樹
脂のフィルムを、それぞれ第1の絶縁樹脂層1a上下面
に順番に積層し、これらを熱硬化することにより形成さ
れる。なお、第2の配線導体2bは第2の絶縁樹脂層1
bを形成した後にその表面に、第1の配線導体2aと第
2の配線導体2bの一部が重なるように、厚みが3〜50
μm程度の銅めっき膜を従来公知のセミアディティブ法
やサブトラクティブ法のパターン形成法により所定のパ
ターンに被着させることによって形成される。また、第
3の配線導体2cは第3の絶縁樹脂層1cの表面に、後
述する貫通孔3の内周壁に金属薄膜4を被着形成する際
にこれと同時に、厚みが3〜50μm程度の銅めっき膜を
従来公知のセミアディティブ法やサブトラクティブ法の
パターン形成法により所定のパターンに被着させること
によって形成される。Second and third insulating resin layers 1b and 1c
Is for providing an insulating space for high-density wiring of the second and third wiring conductors 2b and 2c, and penetrates the second wiring conductor 2b and the third wiring conductor 2c. High-density wiring can be three-dimensionally formed by electrically connecting via the metal thin film 4 formed on the inner wall of the hole 3. Such second and third insulating resin layers 1b
The layer 1c is formed by sequentially stacking uncured thermosetting resin films having a thickness of about 20 to 60 μm on the upper and lower surfaces of the first insulating resin layer 1a and thermally curing the films. The second wiring conductor 2b is the second insulating resin layer 1
After forming b, the thickness is 3 to 50 so that the first wiring conductor 2a and the second wiring conductor 2b partially overlap with the surface thereof.
It is formed by depositing a copper plating film of about μm in a predetermined pattern by a conventionally known pattern forming method such as a semi-additive method or a subtractive method. The third wiring conductor 2c has a thickness of about 3 to 50 μm at the same time when the metal thin film 4 is formed on the inner peripheral wall of the through hole 3 described later on the surface of the third insulating resin layer 1c. It is formed by depositing a copper plating film in a predetermined pattern by a conventionally known pattern forming method such as a semi-additive method or a subtractive method.
【0021】また、第2の絶縁樹脂層1bには第1の貫
通孔3aが、第3の絶縁樹脂層1cには第2の貫通孔3
bが形成されている。第1の貫通孔3aは第1の配線導
体2a上に位置して、第2の絶縁樹脂層1bおよび第2
の配線導体2bを貫通するとともに第1の配線導体2a
を第1の貫通孔3a内に露出するように形成されてお
り、さらに、第2の貫通孔3bは第1の貫通孔3aより
も断面が大きく第1の貫通孔3aの直上に位置して第3
の絶縁樹脂層1cを貫通するとともに第2の配線導体2
bを第2の貫通孔3b内に露出するように形成されてい
る。The second through hole 3a is formed in the second insulating resin layer 1b, and the second through hole 3 is formed in the third insulating resin layer 1c.
b is formed. The first through hole 3a is located on the first wiring conductor 2a, and the second insulating resin layer 1b and the second insulating resin layer 1b are provided.
Of the first wiring conductor 2a while penetrating the wiring conductor 2b of
Is formed so as to be exposed in the first through hole 3a, and the second through hole 3b has a cross section larger than that of the first through hole 3a and is located immediately above the first through hole 3a. Third
Of the second wiring conductor 2 while penetrating the insulating resin layer 1c of
It is formed so that b is exposed in the second through hole 3b.
【0022】第1の貫通孔3aはその開孔径が20〜100
μm程度、第2の貫通孔3bはその開孔径が50〜250μ
m程度であり、第2および第3の絶縁樹脂層1b・1c
を積層後、従来周知の炭酸ガスレーザやUV−YAGレ
ーザ・エキシマレーザ等を用いて加工することにより、
第2の貫通孔3bが第1の貫通孔3aの直上に位置する
ように形成される。The opening diameter of the first through hole 3a is 20 to 100.
The opening diameter of the second through hole 3b is about 50 to 250 μm.
m, and the second and third insulating resin layers 1b and 1c
After stacking, by using a well-known carbon dioxide gas laser, UV-YAG laser, excimer laser, etc.,
The second through hole 3b is formed so as to be located immediately above the first through hole 3a.
【0023】さらに、第1および第2の貫通孔3a・3
bの内壁には、上下に位置する配線導体2を電気的に接
続する金属薄膜4が被着形成される。金属薄膜4は、レ
ーザにより第1および第2の貫通孔3a・3bを形成し
た後、従来周知のめっき法により厚みが3〜50μm程度
の銅めっき膜を第1および第2の貫通孔3a・3bの内
壁に析出させて被着することにより形成される。そし
て、金属薄膜4の第3の絶縁樹脂層1cの表面に形成さ
れる部分が前述の第3の配線導体2cとなる。Furthermore, the first and second through holes 3a.3
On the inner wall of b, a metal thin film 4 for electrically connecting the upper and lower wiring conductors 2 is adhered and formed. After forming the first and second through holes 3a and 3b by a laser, the metal thin film 4 is coated with a copper plating film having a thickness of about 3 to 50 μm by a conventionally known plating method to form the first and second through holes 3a and 3a. It is formed by depositing and depositing on the inner wall of 3b. The portion of the metal thin film 4 formed on the surface of the third insulating resin layer 1c becomes the above-mentioned third wiring conductor 2c.
【0024】なお、配線導体2および金属薄膜4は、搭
載される半導体素子等の電子部品(図示せず)の各電極
を外部電気回路基板(図示せず)に接続するための導電
路としての機能を有し、配線導体2および金属薄膜4の
厚みが3〜50μm程度であることが好ましく、高速の信
号を伝達させるという観点から3μm以上であること
が、配線導体2と絶縁樹脂層1との熱膨張差による剥離
を防止するという観点からは50μm以下であることが好
ましい。The wiring conductor 2 and the metal thin film 4 serve as a conductive path for connecting each electrode of an electronic component (not shown) such as a semiconductor element to be mounted to an external electric circuit board (not shown). It is preferable that the wiring conductor 2 and the metal thin film 4 have a function, and the thickness of the wiring conductor 2 and the metal thin film 4 is about 3 to 50 μm, and that the wiring conductor 2 and the insulating resin layer 1 have a thickness of 3 μm or more from the viewpoint of transmitting a high-speed signal. It is preferably 50 μm or less from the viewpoint of preventing peeling due to the difference in thermal expansion.
【0025】そして本発明の配線基板5においては、上
述したように第1の配線導体2a上に第1の貫通孔3a
を形成して第1の配線導体2aを第1の貫通孔3a内に
露出させるとともに第1の貫通孔3aの直上に第1の貫
通孔3aの断面よりも大きな第2の貫通孔3bを形成し
て第2の配線導体2bを第2の貫通孔3b内に露出さ
せ、そして、第1および第2の貫通孔3a・3bの内壁
から第3の絶縁樹脂層1cの上面にかけて金属薄膜4を
形成して第1の配線導体2aの露出した部分と第2の配
線導体2bの露出した部分と第3の絶縁樹脂層1cの上
面に形成された金属薄膜4から成る第3の配線導体2c
とを接続することが好ましい。また、このことが重要で
ある。In the wiring board 5 of the present invention, as described above, the first through hole 3a is formed on the first wiring conductor 2a.
To expose the first wiring conductor 2a in the first through hole 3a, and to form a second through hole 3b larger than the cross section of the first through hole 3a immediately above the first through hole 3a. Then, the second wiring conductor 2b is exposed in the second through hole 3b, and the metal thin film 4 is formed from the inner walls of the first and second through holes 3a and 3b to the upper surface of the third insulating resin layer 1c. A third wiring conductor 2c formed by the exposed portion of the first wiring conductor 2a, the exposed portion of the second wiring conductor 2b, and the metal thin film 4 formed on the upper surface of the third insulating resin layer 1c.
It is preferable to connect and. This is also important.
【0026】本発明の配線基板5によれば、第1の配線
導体2aを第1の貫通孔3a内に露出させるとともに第
2の配線導体2bを第2の貫通孔3b内に露出させ、そ
して、第1および第2の貫通孔3a・3bの内壁から第
3の絶縁樹脂層1cの上面にかけて金属薄膜4を形成し
て第1の配線導体2aの露出した部分と第2の配線導体
2bの露出した部分と第3の絶縁樹脂層1cの上面に形
成された金属薄膜4から成る第3の配線導体2cとを接
続させたことから、第1および第2の配線導体2a・2
bと金属薄膜4との接合面積が広いものとなり、その結
果、第1および第2の配線導体2a・2bと第3の配線
導体2cとを強固に接続することができ、配線基板5を
高密度化するために第1の貫通孔3aを微細化したとし
ても接続信頼性に優れた配線基板5とすることができ
る。According to the wiring board 5 of the present invention, the first wiring conductor 2a is exposed in the first through hole 3a and the second wiring conductor 2b is exposed in the second through hole 3b. , The metal thin film 4 is formed from the inner walls of the first and second through holes 3a and 3b to the upper surface of the third insulating resin layer 1c to form the exposed portion of the first wiring conductor 2a and the second wiring conductor 2b. Since the exposed portion is connected to the third wiring conductor 2c formed of the metal thin film 4 formed on the upper surface of the third insulating resin layer 1c, the first and second wiring conductors 2a.
The bonding area between b and the metal thin film 4 becomes large, and as a result, the first and second wiring conductors 2a and 2b and the third wiring conductor 2c can be firmly connected to each other, and the wiring board 5 can be made high. Even if the first through holes 3a are miniaturized in order to increase the density, the wiring board 5 having excellent connection reliability can be obtained.
【0027】また、本発明の配線基板5においては、第
1の貫通孔3aの断面の直径を第2の貫通孔3bの断面
の直径の0.2〜0.9倍とすることが好ましい。In the wiring board 5 of the present invention, it is preferable that the diameter of the cross section of the first through hole 3a is 0.2 to 0.9 times the diameter of the cross section of the second through hole 3b.
【0028】本発明の配線基板によれば、第1の貫通孔
3aの断面の直径を第2の貫通孔3bの断面の直径の0.
2〜0.9倍としたことから、第2の貫通孔3b内に露出す
る第2の配線導体2bの面積が十分広いものとなり、貫
通孔3内に形成される金属薄膜4と第2の配線導体2b
との接合を強固なものとすることができる。さらに、貫
通孔3を上下に複数形成してスタックトビアを形成した
場合においても、一番上に形成される貫通孔3の断面の
直径が一番下に形成される貫通孔3の断面の直径に較べ
て非常に大きなものとなることはなく、その結果、配線
基板5が大型化してしまうこともない。なお、第1の貫
通孔3aの断面の直径が第2の貫通孔3bの断面の直径
の0.2倍未満であると、第2の貫通孔3b内に露出する
第2の配線導体2bの面積が小さいものとなり、第2の
配線導体2bと金属薄膜4との接合強度が不十分とな
り、温度サイクル試験(TCT)等の耐熱疲労性試験に
おいて、絶縁樹脂層1と第2の配線導体2bおよび金属
薄膜4との熱膨張差による熱応力が第2の配線導体2b
と金属薄膜4との接続部に集中して断線不良を発生させ
易くなる傾向があり、0.9倍を超えると貫通孔3を複数
上下に積層した際、一番上に形成される貫通孔3の断面
の直径が大きなものとなり、配線基板5が大型化してし
まう傾向がある。したがって、第1の貫通孔3aの断面
の直径を第2の貫通孔3bの断面の直径の0.2〜0.9倍と
することが好ましい。According to the wiring board of the present invention, the diameter of the cross section of the first through hole 3a is less than the diameter of the cross section of the second through hole 3b.
Since it is set to 2 to 0.9 times, the area of the second wiring conductor 2b exposed in the second through hole 3b becomes sufficiently large, and the metal thin film 4 and the second wiring conductor formed in the through hole 3 become large. 2b
It is possible to strengthen the bond with the. Further, even when a plurality of through holes 3 are vertically formed to form a stacked via, the diameter of the cross section of the through hole 3 formed at the top is the diameter of the cross section of the through hole 3 formed at the bottom. However, the size of the wiring board 5 does not increase as a result. When the diameter of the cross section of the first through hole 3a is less than 0.2 times the diameter of the cross section of the second through hole 3b, the area of the second wiring conductor 2b exposed in the second through hole 3b becomes smaller. It becomes small, the bonding strength between the second wiring conductor 2b and the metal thin film 4 becomes insufficient, and in the thermal fatigue resistance test such as the temperature cycle test (TCT), the insulating resin layer 1, the second wiring conductor 2b and the metal. The thermal stress due to the difference in thermal expansion from the thin film 4 causes the second wiring conductor 2b.
Tends to concentrate on the connection between the metal thin film 4 and the metal thin film 4, and if it exceeds 0.9 times, when a plurality of through holes 3 are stacked vertically, the through hole 3 formed on the top of The diameter of the cross section becomes large, and the wiring board 5 tends to be large. Therefore, it is preferable that the diameter of the cross section of the first through hole 3a is 0.2 to 0.9 times the diameter of the cross section of the second through hole 3b.
【0029】また、第2の絶縁樹脂層2bの表面に形成
される第2の配線導体2bを形成する際に、あらかじめ
第1の貫通孔3aの大きさに開口部を形成しておくこと
が好ましい。第2の配線導体2bに第1の貫通孔3aの
大きさの開口部を形成しておき、この開口部が第1の貫
通孔3aの断面となるように第1の貫通孔3aを形成す
ることにより、開口部が第1の貫通孔3aを形成する際
のマスクの役割を果たし、第1の貫通孔3aを位置精度
良く形成することができる。また、レーザで第1および
第2の貫通孔3a・3bを形成する際に、第1の配線導
体2aを貫通させる必要がないことから、レーザの加工
条件を第2および第3の絶縁樹脂層1b・1cを加工す
る条件に設定すればよく、その結果、工程を短縮するこ
とができる。Further, when forming the second wiring conductor 2b formed on the surface of the second insulating resin layer 2b, an opening may be formed in advance to the size of the first through hole 3a. preferable. An opening having the size of the first through hole 3a is formed in the second wiring conductor 2b, and the first through hole 3a is formed so that the opening has a cross section of the first through hole 3a. As a result, the opening serves as a mask when forming the first through hole 3a, and the first through hole 3a can be formed with high positional accuracy. Further, since it is not necessary to penetrate the first wiring conductor 2a when forming the first and second through holes 3a and 3b with a laser, the processing conditions of the laser are set to the second and third insulating resin layers. The conditions for processing 1b and 1c may be set, and as a result, the process can be shortened.
【0030】かくして、本発明の配線基板5によれば、
上記構成の配線基板5の上面に形成した第3の配線導体
2cの一部から成る接続パッドに半田等の導体バンプ6
を介して半導体素子等の電子部品(図示せず)を電気的
に接続するとともに、配線基板5の下面に形成した第3
の配線導体2cの一部から成る接続パッドに半田等の導
体バンプ6を被着形成することにより、高密度で絶縁信
頼性に優れた集積回路装置とすることができる。Thus, according to the wiring board 5 of the present invention,
Conductor bumps 6 such as solder are attached to the connection pads formed of a part of the third wiring conductors 2c formed on the upper surface of the wiring board 5 having the above-described configuration.
A third element formed on the lower surface of the wiring board 5 while electrically connecting an electronic component (not shown) such as a semiconductor element via the
By forming the conductive bumps 6 such as solder on the connection pads formed by a part of the wiring conductor 2c, it is possible to obtain an integrated circuit device having high density and excellent insulation reliability.
【0031】なお、本発明は、上述の実施の形態の一例
に限定されるものではなく、本発明の要旨を逸脱しない
範囲であれば種々の変更は可能であり、例えば、上述の
実施例では、第1の絶縁樹脂層1aを芯体として例示し
たが、第1の絶縁樹脂層1aを第2および第3の絶縁樹
脂層1b・1cと同じ材料で形成してもよい。また、上
述の実施例では、芯体となる第1の絶縁樹脂層1aの上
下面にそれぞれ第2および第3の絶縁樹脂層1b・1c
を積層した例を示したが、上面あるいは下面のみに第2
および第3の絶縁樹脂層1b・1cを積層してもよい。
さらに、絶縁樹脂層1を4層以上積層するとともに3個
以上の貫通孔3を上下に積み重ねてもよい。また、上述
の実施例では、芯体となる第1の絶縁樹脂層1aに貫通
孔11・貫通導体12を形成した例を示しているが、これら
は必要に応じて形成すればよい。さらに、最外層の絶縁
樹脂層1の表面に、半田リフローの際の耐熱性を向上さ
せるために、ソルダーレジスト層7を被着形成してもよ
い。The present invention is not limited to the above-mentioned example of the embodiment, and various modifications can be made without departing from the gist of the present invention. For example, in the above-mentioned embodiment, Although the first insulating resin layer 1a is illustrated as the core body, the first insulating resin layer 1a may be formed of the same material as the second and third insulating resin layers 1b and 1c. In addition, in the above-described embodiment, the second and third insulating resin layers 1b and 1c are respectively formed on the upper and lower surfaces of the first insulating resin layer 1a which is the core.
Although an example in which the
Alternatively, the third insulating resin layers 1b and 1c may be laminated.
Furthermore, four or more insulating resin layers 1 may be laminated and three or more through holes 3 may be vertically stacked. Further, in the above-described embodiment, the example in which the through holes 11 and the through conductors 12 are formed in the first insulating resin layer 1a serving as the core is shown, but these may be formed as needed. Further, a solder resist layer 7 may be formed on the surface of the outermost insulating resin layer 1 in order to improve heat resistance during solder reflow.
【0032】次に、本発明の配線基板の製造方法につい
て上述の配線基板を製造する場合を例にとって説明す
る。なお、図3は、本発明の配線基板の製造方法を説明
するための工程毎の部分断面図である。Next, a method for manufacturing a wiring board according to the present invention will be described by taking the case of manufacturing the above wiring board as an example. Note that FIG. 3 is a partial cross-sectional view of each step for explaining the method of manufacturing the wiring board of the present invention.
【0033】まず、図3(a)に断面図で示すように、
芯体と成る絶縁樹脂層1aを準備するとともに、この上
面に第1の配線導体2aを被着形成する。絶縁樹脂層1
aは、厚みが0.3〜1.5mm程度で、例えばガラス繊維を
縦横に織り込んだガラスクロスにエポキシ樹脂やビスマ
レイミドトリアジン樹脂等の熱硬化性樹脂を含浸させた
シートを乾燥することにより形成される。また、第1の
配線導体2aは、絶縁樹脂層1aとなる未硬化のシート
表面に厚みが3〜50μmの銅箔を被着しておくとともに
この銅箔をシートの硬化後に所定のパターンにエッチン
グ加工することにより形成される。First, as shown in the sectional view of FIG.
An insulating resin layer 1a to be a core is prepared, and a first wiring conductor 2a is adhered and formed on the upper surface thereof. Insulating resin layer 1
The thickness a is about 0.3 to 1.5 mm, and is formed by drying a sheet obtained by impregnating a glass cloth in which glass fibers are woven lengthwise and widthwise with a thermosetting resin such as an epoxy resin or a bismaleimide triazine resin. In addition, the first wiring conductor 2a is formed by applying a copper foil having a thickness of 3 to 50 μm to the surface of the uncured sheet that will be the insulating resin layer 1a, and etching the copper foil into a predetermined pattern after curing the sheet. It is formed by processing.
【0034】なお、この例では、絶縁樹脂層1aはその
上面から下面にかけて直径が0.1〜1.0mm程度の複数の
スルーホール11を有している。そして、スルーホール11
の内壁には絶縁樹脂層1aの上下面に形成される第1の
配線導体2a同士を電気的に接続するための銅めっき膜
12が従来周知のめっき法を用いて被着されている。ま
た、スルーホール11の内部には、スルーホール11の直上
および直下に絶縁樹脂層1bを形成可能とするためにエ
ポキシ樹脂やビスマレイミドトリアジン樹脂等の熱硬化
性樹脂から成る樹脂柱13が充填されている。このような
樹脂柱13は、未硬化のペースト状の熱硬化性樹脂をスル
ーホール11内にスクリーン印刷法により充填し、これを
熱硬化させた後、その上下面を略平坦に研磨することに
より形成される。なお、第1の配線導体2aは、スルー
ホール11の内壁に銅めっき膜12を被着形成する際に、め
っき法により銅めっき膜12と一体的に形成してもよい。In this example, the insulating resin layer 1a has a plurality of through holes 11 each having a diameter of about 0.1 to 1.0 mm from its upper surface to its lower surface. And through hole 11
A copper plating film for electrically connecting the first wiring conductors 2a formed on the upper and lower surfaces of the insulating resin layer 1a to the inner wall of the
12 are deposited by using a well-known plating method. In addition, the inside of the through hole 11 is filled with a resin column 13 made of a thermosetting resin such as an epoxy resin or a bismaleimide triazine resin so that the insulating resin layer 1b can be formed immediately above and below the through hole 11. ing. Such a resin column 13 is obtained by filling an uncured paste-like thermosetting resin into the through hole 11 by a screen printing method, heat-curing the resin, and polishing the upper and lower surfaces thereof to be substantially flat. It is formed. The first wiring conductor 2a may be integrally formed with the copper plating film 12 by a plating method when the copper plating film 12 is formed on the inner wall of the through hole 11.
【0035】次に、図3(b)に断面図で示すように、
第1の絶縁樹脂層1aおよび第1の配線導体2aの上に
第2の絶縁樹脂層1bを積層する。第2の絶縁樹脂層1
bは、配線導体2を高密度に配線するための絶縁間隔を
提供するためのものであり、そして、後述する上層の配
線導体2と下層の配線導体2とを貫通孔3の内壁に被着
形成した金属薄膜4を介して電気的に接続することによ
り高密度配線を立体的に形成可能としている。このよう
な第2の絶縁樹脂層1bは、厚みが20〜60μm程度で、
例えば、エポキシ樹脂や変性ポリフェニレンエーテル樹
脂等の熱硬化性樹脂と粒径が0.01〜2μmで含有量が10
〜50重量%のシリカやアルミナ・窒化アルミニウム等の
無機絶縁フィラーとから成る未硬化のフィルムを、第1
の絶縁樹脂層1aおよび第1の配線導体2aの上に積層
し、これを熱硬化することにより形成される。Next, as shown in the sectional view of FIG.
The second insulating resin layer 1b is laminated on the first insulating resin layer 1a and the first wiring conductor 2a. Second insulating resin layer 1
b is for providing an insulating space for wiring the wiring conductors 2 at a high density, and the wiring conductors 2 in the upper layer and the wiring conductors 2 in the lower layer, which will be described later, are attached to the inner walls of the through holes 3. High-density wiring can be three-dimensionally formed by electrically connecting via the formed metal thin film 4. Such a second insulating resin layer 1b has a thickness of about 20 to 60 μm,
For example, a thermosetting resin such as an epoxy resin or a modified polyphenylene ether resin and a particle size of 0.01 to 2 μm and a content of 10
First, an uncured film consisting of -50% by weight of silica or an inorganic insulating filler such as alumina or aluminum nitride
It is formed by laminating on the insulating resin layer 1a and the first wiring conductor 2a, and thermosetting the same.
【0036】そして次に、図3(c)に断面図で示すよ
うに、第2の絶縁樹脂層1b上に第1の配線導体2a上
に位置する開口部Kを有する第2の配線導体2bを形成
する。第2の配線導体2bは、第2の絶縁樹脂層1b表
面を過マンガン酸塩類水溶液等の粗化液に60℃で15分間
浸漬して粗化した後、無電解めっき用パラジウム触媒の
水溶液中に浸漬し表面にパラジウム触媒を付着させ、次
に、硫酸銅・ロッセル塩・ホルマリン・EDTAナトリ
ウム塩・安定剤等から成る無電解めっき液に約30分間浸
漬して第2の絶縁樹脂層2b表面に厚みが1〜2μm程
度の無電解銅めっき層を析出させ、しかる後、無電解銅
めっき層の上面に耐めっき樹脂層を被着し露光・現像に
より第1の配線導体2a上に位置する開口部Kを有する
第2の配線導体2bのパターン形状に、電解銅めっき層
を被着させるための開口を形成し、さらに、硫酸・硫酸
銅5水和物・塩素・光沢剤等から成る電解銅めっき液に
数A/dm2の電流を印加しながら数時間浸漬すること
により開口に電解銅めっき層を被着させ、最後に、耐め
っき樹脂層を水酸化ナトリウムで剥離するとともに耐め
っき樹脂層を剥離したことにより露出する無電解銅めっ
き層を硫酸系水溶液によりエッチング除去することによ
り、3〜50μm程度の厚みに形成される。Then, as shown in a sectional view in FIG. 3C, a second wiring conductor 2b having an opening K located on the first wiring conductor 2a is formed on the second insulating resin layer 1b. To form. The second wiring conductor 2b is immersed in a roughening liquid such as an aqueous solution of permanganate for 15 minutes at 60 ° C. to roughen the surface of the second insulating resin layer 1b, and then in an aqueous solution of a palladium catalyst for electroless plating. The surface of the second insulating resin layer 2b is immersed in an electroless plating solution containing copper sulfate, Rossell salt, formalin, EDTA sodium salt, stabilizer, etc. for about 30 minutes. And depositing an electroless copper plating layer having a thickness of about 1 to 2 μm, and then depositing a plating resistant resin layer on the upper surface of the electroless copper plating layer and arranging it on the first wiring conductor 2a by exposure and development. An opening for depositing an electrolytic copper plating layer is formed on the pattern shape of the second wiring conductor 2b having an opening K, and further, an electrolysis comprising sulfuric acid, copper sulfate pentahydrate, chlorine, a brightener, etc. Apply a current of several A / dm 2 to the copper plating solution. While depositing an electrolytic copper plating layer in the opening by immersing for several hours, finally, the electroless copper plating layer exposed by peeling the plating resistant resin layer with sodium hydroxide and peeling the plating resistant resin layer It is formed into a thickness of about 3 to 50 μm by etching away with a sulfuric acid-based aqueous solution.
【0037】そして本発明の配線基板の製造方法におい
ては、第2の配線導体2bを第1の配線導体2a上に位
置する開口部Kを有するように形成することが重要であ
る。第2の配線導体2bを第1の配線導体2a上に位置
する開口部Kを有するように形成して、この開口部Kが
第1の貫通孔3aの断面となるように第1の貫通孔3a
を形成することにより、開口部Kが第1の貫通孔3aを
形成する際のマスクの役割を果たし、第1の貫通孔3a
を位置精度良く形成することができる。また、レーザで
第1および第2の貫通孔3a・3bを形成する際に、第
1の配線導体2aを貫通させる必要がないことから、レ
ーザの加工条件を第2および第3の絶縁樹脂層1b・1
cを加工する条件に設定すればよく、その結果、工程を
短縮することができる。In the method for manufacturing a wiring board of the present invention, it is important to form the second wiring conductor 2b so as to have the opening K located on the first wiring conductor 2a. The second wiring conductor 2b is formed so as to have an opening K located on the first wiring conductor 2a, and the first through hole is formed so that the opening K has a cross section of the first through hole 3a. 3a
By forming the first through hole 3a, the opening K serves as a mask when forming the first through hole 3a.
Can be formed with high positional accuracy. Further, since it is not necessary to penetrate the first wiring conductor 2a when forming the first and second through holes 3a and 3b with a laser, the processing conditions of the laser are set to the second and third insulating resin layers. 1b ・ 1
It suffices to set conditions for processing c, and as a result, the process can be shortened.
【0038】次に、図3(d)に断面図で示すように、
第2の絶縁樹脂層1bおよび第2の配線導体2bの上に
第3の絶縁樹脂層1cを積層する。第3の絶縁樹脂層1
cは、第2の絶縁樹脂層1bと同様に、配線導体2を高
密度に配線するための絶縁間隔を提供するためのもので
あり、第2の絶縁樹脂層1bと同様の組成・厚み・方法
により第2の絶縁樹脂層1bおよび第2の配線導体2b
の上に積層される。Next, as shown in the sectional view of FIG.
The third insulating resin layer 1c is laminated on the second insulating resin layer 1b and the second wiring conductor 2b. Third insulating resin layer 1
Similarly to the second insulating resin layer 1b, c is for providing an insulating space for wiring the wiring conductors 2 at high density, and has the same composition, thickness, and thickness as those of the second insulating resin layer 1b. Second insulating resin layer 1b and second wiring conductor 2b
Stacked on top of.
【0039】そして次に、図3(e)に断面図で示すよ
うに、第2の絶縁樹脂層1bに第2の配線導体2bの開
口部Kと略同形状の断面の第1の貫通孔3aを形成する
とともに、第3の絶縁樹脂層1cに第1の貫通孔3aの
直上に位置する第1の貫通孔3aの断面より大きな断面
の第2の貫通孔3bを形成する。また、本発明の配線基
板の製造方法においては、このことが重要である。Then, as shown in the sectional view of FIG. 3 (e), the first through-hole of the second insulating resin layer 1b has a cross section of substantially the same shape as the opening K of the second wiring conductor 2b. 3a is formed, and a second through hole 3b having a larger cross section than the cross section of the first through hole 3a located immediately above the first through hole 3a is formed in the third insulating resin layer 1c. This is important in the method of manufacturing a wiring board of the present invention.
【0040】第1の貫通孔3aは、その開孔径が20〜10
0μm程度、第2の貫通孔3bは、その開孔径が50〜250
μm程度であり、第2の貫通孔3bは第1の貫通孔3a
の直上に形成されている。このような貫通孔3a・3b
は、従来周知の炭酸ガスレーザやUV−YAGレーザ・
エキシマレーザ等を用いて加工することにより、両者が
上下に重なるように形成される。The first through hole 3a has an opening diameter of 20 to 10
The opening diameter of the second through-hole 3b is about 0 to about 50 μm to 250 μm.
μm, the second through hole 3b is the first through hole 3a
Is formed immediately above. Such through holes 3a and 3b
Is a well-known carbon dioxide gas laser or UV-YAG laser.
By processing using an excimer laser or the like, both are formed so as to overlap with each other.
【0041】本発明の配線基板の製造方法によれば、第
3の絶縁樹脂層1cに第1の貫通孔3aの直上に位置す
る第1の貫通孔3aの断面より大きな断面の第2の貫通
孔3bを形成することから、絶縁樹脂層1を積層した後
に第1および第2の貫通孔3a・3bをレーザを用いて
同時に形成できるので工程が煩雑にならないとともに工
程を簡素化することができる。また、第1の貫通孔3a
を形成する際に、第2の配線導体2bの開口部Kを貫通
孔3a形成用のマスクとして利用できるために、第1の
貫通孔3aを第2の配線導体2bの開口部Kに位置精度
よく形成することができる。さらに、第2の樹脂絶縁層
1b上の第2の配線導体2bに開口部Kを形成するとと
もに、第2の樹脂絶縁層1bに第2の配線導体2bの開
口部Kと略同形状の断面の第1の貫通孔3aを形成する
ことから、レーザで絶縁樹脂層1に貫通孔3を形成する
際に配線導体2を貫通させる必要がなく、その結果、レ
ーザによる加工条件を絶縁樹脂層1を加工する条件にの
みに設定すればよく、工程を短縮することができる。According to the method of manufacturing a wiring board of the present invention, the second through hole having a larger cross section than the cross section of the first through hole 3a located immediately above the first through hole 3a is formed in the third insulating resin layer 1c. Since the hole 3b is formed, the first and second through holes 3a and 3b can be simultaneously formed by using the laser after the insulating resin layer 1 is laminated, so that the process is not complicated and the process can be simplified. . In addition, the first through hole 3a
Since the opening K of the second wiring conductor 2b can be used as a mask for forming the through hole 3a when forming the first wiring conductor, the positional accuracy of the first through hole 3a in the opening K of the second wiring conductor 2b can be improved. Can be well formed. Further, an opening K is formed in the second wiring conductor 2b on the second resin insulating layer 1b, and a cross section of the same shape as the opening K of the second wiring conductor 2b is formed in the second resin insulating layer 1b. Since the first through-hole 3a is formed, it is not necessary to penetrate the wiring conductor 2 when forming the through-hole 3 in the insulating resin layer 1 with a laser, and as a result, the processing conditions by the laser can be changed. The process can be shortened by setting only the conditions for processing.
【0042】なお、第1の貫通孔3aの断面の直径を第
2の貫通孔3bの断面の直径の0.2〜0.9倍としておく
と、第2の貫通孔3b内に露出する第2の配線導体2b
の領域が十分広いものとなり、貫通孔3内に形成される
金属薄膜4と第2の配線導体2bとの接合を強固なもの
とすることができる。さらに、貫通孔3を上下に複数形
成してスタックトビアを形成した場合においても、一番
上に形成される貫通孔3の断面の直径が一番下に形成さ
れる貫通孔3の断面の直径に較べて非常に大きなものと
なることはなく、その結果、配線基板5が大型化してし
まうこともない。When the diameter of the cross section of the first through hole 3a is set to 0.2 to 0.9 times the diameter of the cross section of the second through hole 3b, the second wiring conductor exposed in the second through hole 3b is formed. 2b
The area is sufficiently wide, and the metal thin film 4 formed in the through hole 3 and the second wiring conductor 2b can be joined firmly. Further, even when a plurality of through holes 3 are vertically formed to form a stacked via, the diameter of the cross section of the through hole 3 formed at the top is the diameter of the cross section of the through hole 3 formed at the bottom. However, the size of the wiring board 5 does not increase as a result.
【0043】そして最後に、図3(f)に断面図で示す
ように、第1の貫通孔3aおよび第2の貫通孔3bの内
壁から第3の絶縁樹脂層1cの上面にかけて金属薄膜4
を被着して、第3の絶縁樹脂層1cの上面に金属薄膜4
から成る第3の配線導体2cを形成するとともに第1乃
至第3の配線導体2a・2b・2cを金属薄膜4で接続
することにより、図1に示したような本発明の配線基板
が完成する。Finally, as shown in the sectional view of FIG. 3 (f), the metal thin film 4 extends from the inner walls of the first through hole 3a and the second through hole 3b to the upper surface of the third insulating resin layer 1c.
The metal thin film 4 on the upper surface of the third insulating resin layer 1c.
By forming the third wiring conductor 2c consisting of and connecting the first to third wiring conductors 2a, 2b, 2c with the metal thin film 4, the wiring substrate of the present invention as shown in FIG. 1 is completed. .
【0044】金属薄膜4は、上下に位置する配線導体2
同士を電気的に接続し、配線基板5に搭載される半導体
素子等の電子部品(図示せず)の各電極を外部電気回路
基板(図示せず)に接続するための導電路としての機能
を有し、その一部は第3の絶縁樹脂層1cの上面に形成
され、第3の配線導体2cを形成する。The metal thin film 4 is composed of the wiring conductors 2 located above and below.
A function as a conductive path for electrically connecting each other and connecting each electrode of an electronic component (not shown) such as a semiconductor element mounted on the wiring board 5 to an external electric circuit board (not shown) And a part thereof is formed on the upper surface of the third insulating resin layer 1c to form the third wiring conductor 2c.
【0045】金属薄膜4は、その厚みが3〜50μm程度
であることが好ましく、高速の信号を伝達させるという
観点から3μm以上であることが、金属薄膜4と絶縁樹
脂層1との熱膨張差による剥離を防止するという観点か
らは50μm以下であることが好ましい。The metal thin film 4 preferably has a thickness of about 3 to 50 μm. From the viewpoint of transmitting a high-speed signal, the thickness of the metal thin film 4 is 3 μm or more. The thickness is preferably 50 μm or less from the viewpoint of preventing peeling due to peeling.
【0046】このような金属薄膜4は、第1および第2
の貫通孔3a・3bを形成した後、第3の絶縁樹脂層1
c表面および第1および第2の貫通孔3a・3b内壁を
過マンガン酸塩類水溶液等の粗化液に60℃で15分間浸漬
して粗化した後、上述の第2の配線導体2bと同様のめ
っき方法を採用することにより、第3の絶縁樹脂層1c
表面および第1および第2の貫通孔3a・3b内壁に、
3〜50μmの厚みで被着形成される。Such a metal thin film 4 has the first and second
After forming the through holes 3a and 3b of the third insulating resin layer 1
c The surface and the inner walls of the first and second through holes 3a and 3b are immersed in a roughening solution such as an aqueous solution of permanganate for 15 minutes at 60 ° C. for roughening, and then the same as the second wiring conductor 2b described above. Of the third insulating resin layer 1c
On the surface and the inner walls of the first and second through holes 3a and 3b,
It is deposited to a thickness of 3 to 50 μm.
【0047】かくして、本発明の配線基板の製造方法に
よれば、第1の絶縁樹脂層1aに第2の絶縁樹脂層1b
と第3の絶縁樹脂層1cとを積層後、第2の樹脂絶縁層
1bおよび第3の絶縁樹脂層1cにそれぞれ第1の貫通
孔3aおよび第2の貫通孔3bを形成することから、工
程が煩雑になることはなく、工程を簡素化できる。ま
た、第2の樹脂絶縁層1b上の第2の配線導体2bに開
口部Kを形成するとともに、第2の樹脂絶縁層1bに第
2の配線導体2bの開口部Kと略同形状の断面の第1の
貫通孔3aを形成することから、レーザで絶縁樹脂層1
に貫通孔3を形成する際に配線導体2を貫通させる必要
がなく、その結果、レーザによる加工条件を絶縁樹脂層
1を加工する条件にのみに設定すればよく、工程を短縮
することができる。Thus, according to the method for manufacturing a wiring board of the present invention, the first insulating resin layer 1a is formed on the second insulating resin layer 1b.
And the third insulating resin layer 1c are laminated, and the first through hole 3a and the second through hole 3b are formed in the second resin insulating layer 1b and the third insulating resin layer 1c, respectively. Does not become complicated and the process can be simplified. Further, an opening K is formed in the second wiring conductor 2b on the second resin insulating layer 1b, and a cross section of the same shape as the opening K of the second wiring conductor 2b is formed in the second resin insulating layer 1b. By forming the first through hole 3a of the insulating resin layer 1 by laser
It is not necessary to penetrate the wiring conductor 2 when forming the through hole 3 in the through hole 3, and as a result, it is sufficient to set the processing conditions by the laser only to the conditions for processing the insulating resin layer 1, and the process can be shortened. .
【0048】[0048]
【発明の効果】本発明の配線基板によれば、第1の配線
導体上に第1の貫通孔を形成して第1の配線導体を第1
の貫通孔内に露出させるとともに第1の貫通孔の直上に
第1の貫通孔の断面よりも大きな第2の貫通孔を形成し
て第2の配線導体を第2の貫通孔内に露出させ、そし
て、第1および第2の貫通孔の内壁から第3の絶縁樹脂
層の上面にかけて金属薄膜を形成して第1の配線導体の
露出した部分と第2の配線導体の露出した部分と第3の
絶縁樹脂層の上面に形成された金属薄膜から成る第3の
配線導体とを接続したことから、第1および第2の配線
導体と金属薄膜との接合強度を十分なものとすることが
でき、その結果、第1および第2の配線導体と第3の配
線導体とを強固に接続することができ、配線基板を高密
度化するために第1の貫通孔を微細化したとしても接続
信頼性に優れた配線基板とすることができる。According to the wiring board of the present invention, the first wiring conductor is formed into the first wiring conductor by forming the first through hole on the first wiring conductor.
Of the first through hole and a second through hole larger than the cross section of the first through hole is formed immediately above the first through hole to expose the second wiring conductor in the second through hole. Then, a metal thin film is formed from the inner walls of the first and second through holes to the upper surface of the third insulating resin layer to form an exposed portion of the first wiring conductor, an exposed portion of the second wiring conductor, and an exposed portion of the second wiring conductor. Since the third wiring conductor made of a metal thin film formed on the upper surface of the third insulating resin layer is connected, the bonding strength between the first and second wiring conductors and the metal thin film can be made sufficient. As a result, the first and second wiring conductors can be firmly connected to the third wiring conductor, and the connection can be made even if the first through holes are miniaturized in order to increase the density of the wiring board. The wiring board can be highly reliable.
【0049】また、本発明の配線基板によれば、第1の
貫通孔の断面の直径を第2の貫通孔の断面の直径の0.2
〜0.9倍としたことから、第2の貫通孔内に露出する第
2の配線導体の領域が十分広いものとなり、貫通孔内に
形成される金属薄膜と第2の配線導体との接合を強固な
ものとすることができる。さらに、貫通孔を上下に複数
形成してスタックトビアを形成した場合においても、一
番上に形成される貫通孔の断面の直径が一番下に形成さ
れる貫通孔の断面の直径に較べて非常に大きなものとな
ることはなく、その結果、配線基板が大型化してしまう
こともない。According to the wiring board of the present invention, the diameter of the cross section of the first through hole is set to 0.2 times the diameter of the cross section of the second through hole.
Since it is set to ~ 0.9 times, the area of the second wiring conductor exposed in the second through hole is sufficiently wide, and the bonding between the metal thin film formed in the through hole and the second wiring conductor is made firm. It can be anything. Further, even when a plurality of through holes are formed in the upper and lower sides to form a stacked via, the diameter of the cross section of the through hole formed at the top is smaller than the diameter of the cross section of the through hole formed at the bottom. It does not become very large, and as a result, the wiring board does not become large.
【0050】本発明の配線基板の製造方法によれば、第
1の絶縁樹脂層に第2の絶縁樹脂層と第3の絶縁樹脂層
とを積層後、第2の樹脂絶縁層および第3の絶縁樹脂層
にそれぞれ第1の貫通孔および第2の貫通孔を形成する
ことから、工程が煩雑になることはなく、工程を簡素化
できる。また、第2の樹脂絶縁層上の第2の配線導体に
開口部を形成するとともに、第2の樹脂絶縁層に第2の
配線導体の開口部と略同形状の断面の第1の貫通孔を形
成することから、レーザで絶縁樹脂層に貫通孔を形成す
る際に配線導体を貫通させる必要がなく、その結果、レ
ーザによる加工条件を絶縁樹脂層を加工する条件にのみ
に設定すればよく、工程を短縮することができる。According to the method of manufacturing a wiring board of the present invention, after the second insulating resin layer and the third insulating resin layer are laminated on the first insulating resin layer, the second resin insulating layer and the third insulating resin layer are formed. Since the first through hole and the second through hole are formed in the insulating resin layer, the process does not become complicated and the process can be simplified. In addition, an opening is formed in the second wiring conductor on the second resin insulating layer, and the first through hole having a cross section of substantially the same shape as the opening of the second wiring conductor is formed in the second resin insulating layer. Therefore, it is not necessary to penetrate the wiring conductor when forming the through hole in the insulating resin layer by the laser, and as a result, the laser processing conditions may be set only to the conditions for processing the insulating resin layer. The process can be shortened.
【図1】本発明の配線基板の実施の形態の一例を示す断
面図である。FIG. 1 is a cross-sectional view showing an example of an embodiment of a wiring board of the present invention.
【図2】図1の配線基板の要部拡大断面図である。FIG. 2 is an enlarged cross-sectional view of a main part of the wiring board shown in FIG.
【図3】(a)〜(f)は、それぞれ本発明の配線基板
の製造方法を説明するための工程毎の部分断面図であ
る。3A to 3F are partial cross-sectional views of respective steps for explaining the method for manufacturing a wiring board of the present invention.
1・・・・・・・・・・絶縁層
1a・・・・・・・・・第1の絶縁樹脂層
1b・・・・・・・・・第2の絶縁樹脂層
1c・・・・・・・・・第3の絶縁樹脂層
2・・・・・・・・・・配線導体
2a・・・・・・・・・第1の配線導体
2b・・・・・・・・・第2の配線導体
2c・・・・・・・・・第3の配線導体
3・・・・・・・・・・貫通孔
3a・・・・・・・・・第1の貫通孔
3b・・・・・・・・・第2の貫通孔
4・・・・・・・・・・金属薄膜
4a・・・・・・・・・第1の貫通孔に形成された金属
薄膜
4b・・・・・・・・・第2の貫通孔に形成された金属
薄膜
5・・・・・・・・・・配線基板
K・・・・・・・・・・開口部1 ... Insulating layer 1a ... 1st insulating resin layer 1b ... 2nd insulating resin layer 1c ... ...... Third insulating resin layer 2 ...... Wiring conductor 2a ・ ・ ・ ・ ・ ・ ・ ・ First wiring conductor 2b ・ ・ ・ ・ ・ ・ ・ ・2 wiring conductor 2c ... 3rd wiring conductor 3 ... through-hole 3a ... 1st through-hole 3b ...・ ・ ・ ・ Second through-hole 4 ・ ・ ・ ・ ・ ・ ・ ・ Metal thin film 4a ・ ・ ・ ・ ・ ・ Metal thin film 4b formed in the first through-hole・ ・ ・ Metal thin film 5 formed in the second through hole ・ ・ ・ Wiring board K ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ Opening
Claims (3)
の絶縁樹脂層と上面に第2の配線導体が形成された第2
の絶縁樹脂層と第3の絶縁樹脂層とが前記第1および第
2の配線導体の一部が上下に重なるようにして順に積層
されるとともに、前記第1の配線導体上に位置して前記
第2の絶縁樹脂層および前記第2の配線導体を貫通した
第1の貫通孔と該第1の貫通孔の直上に位置して前記第
3の絶縁樹脂層を貫通した前記第1の貫通孔よりも断面
の大きな第2の貫通孔とが形成され、かつ前記第1およ
び第2の貫通孔の内壁から前記第3の絶縁樹脂層の上面
にかけて金属薄膜が形成されて前記第1の配線導体と前
記第2の配線導体と前記第3の絶縁樹脂層の上面に形成
された前記金属薄膜から成る第3の配線導体とが接続さ
れていることを特徴とする配線基板。1. A first wiring conductor having a first wiring conductor formed on an upper surface thereof.
Second insulating resin layer and second wiring conductor formed on the upper surface
The insulating resin layer and the third insulating resin layer are sequentially laminated so that a part of the first and second wiring conductors are vertically overlapped with each other, and the insulating resin layer is located on the first wiring conductor. A first through-hole penetrating the second insulating resin layer and the second wiring conductor, and the first through-hole penetrating the third insulating resin layer located immediately above the first through-hole. A second through hole having a larger cross section than that of the first and second through holes, and a metal thin film is formed from the inner walls of the first and second through holes to the upper surface of the third insulating resin layer. A wiring board, wherein the second wiring conductor and the third wiring conductor formed of the metal thin film formed on the upper surface of the third insulating resin layer are connected to each other.
2の貫通孔の断面の直径の0.2〜0.9倍であること
を特徴とする請求項1記載の配線基板。2. The wiring board according to claim 1, wherein the diameter of the cross section of the first through hole is 0.2 to 0.9 times the diameter of the cross section of the second through hole.
体を形成する工程と、前記第1の絶縁樹脂層および前記
第1の配線導体の上に第2の絶縁樹脂層を積層する工程
と、前記第2の絶縁樹脂層上に前記第1の配線導体の上
に位置する開口部を有する第2の配線導体を形成する工
程と、前記第2の絶縁樹脂層および前記第2の配線導体
の上に第3の絶縁樹脂層を積層する工程と、前記第2の
絶縁樹脂層に前記第2の配線導体の開口部と略同形状の
断面の第1の貫通孔を形成するとともに、前記第3の絶
縁樹脂層に前記第1の貫通孔の直上に位置する前記第1
の貫通孔の断面より大きな断面の第2の貫通孔を形成す
る工程と、前記第1の貫通孔および前記第2の貫通孔の
内壁から前記第3の絶縁樹脂層の上面にかけて金属薄膜
を被着して、前記第3の絶縁樹脂層の上面に前記金属薄
膜から成る第3の配線導体を形成するとともに前記第1
乃至第3の配線導体を前記金属薄膜で接続する工程とを
具備することを特徴とする配線基板の製造方法。3. A step of forming a first wiring conductor on an upper surface of a first insulating resin layer, and a second insulating resin layer laminated on the first insulating resin layer and the first wiring conductor. And a step of forming a second wiring conductor having an opening located above the first wiring conductor on the second insulating resin layer, the second insulating resin layer and the second insulating resin layer. Laminating a third insulating resin layer on the wiring conductor of step (1), and forming a first through hole having a cross section of substantially the same shape as the opening of the second wiring conductor in the second insulating resin layer. At the same time, the first insulating layer located on the third insulating resin layer is located directly above the first through hole.
Forming a second through hole having a cross section larger than the cross section of the through hole; and applying a metal thin film from the inner walls of the first through hole and the second through hole to the upper surface of the third insulating resin layer. To form a third wiring conductor formed of the metal thin film on the upper surface of the third insulating resin layer, and
Through the step of connecting the third wiring conductor with the metal thin film, the method for manufacturing a wiring board.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001262509A JP2003078247A (en) | 2001-08-30 | 2001-08-30 | Wiring board and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001262509A JP2003078247A (en) | 2001-08-30 | 2001-08-30 | Wiring board and method of manufacturing the same |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2003078247A true JP2003078247A (en) | 2003-03-14 |
Family
ID=19089396
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001262509A Pending JP2003078247A (en) | 2001-08-30 | 2001-08-30 | Wiring board and method of manufacturing the same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2003078247A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008288434A (en) * | 2007-05-18 | 2008-11-27 | Nippon Mektron Ltd | Multilayer printed wiring board manufacturing method and wiring board |
TWI403242B (en) * | 2007-03-23 | 2013-07-21 | Nippon Mektron Kk | Production method of multilayer printed wiring board |
JP2015029033A (en) * | 2013-06-28 | 2015-02-12 | 京セラサーキットソリューションズ株式会社 | Wiring board |
-
2001
- 2001-08-30 JP JP2001262509A patent/JP2003078247A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI403242B (en) * | 2007-03-23 | 2013-07-21 | Nippon Mektron Kk | Production method of multilayer printed wiring board |
JP2008288434A (en) * | 2007-05-18 | 2008-11-27 | Nippon Mektron Ltd | Multilayer printed wiring board manufacturing method and wiring board |
TWI400023B (en) * | 2007-05-18 | 2013-06-21 | Nippon Mektron Kk | Multilayer printed circuit boards and their wiring boards |
KR101387564B1 (en) | 2007-05-18 | 2014-04-23 | 니폰 메크트론 가부시키가이샤 | Manufacturing method of multilayer printed wiring board and the wiring board |
JP2015029033A (en) * | 2013-06-28 | 2015-02-12 | 京セラサーキットソリューションズ株式会社 | Wiring board |
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