JP2003069081A - Light emitting element and its manufacturing method - Google Patents
Light emitting element and its manufacturing methodInfo
- Publication number
- JP2003069081A JP2003069081A JP2001251371A JP2001251371A JP2003069081A JP 2003069081 A JP2003069081 A JP 2003069081A JP 2001251371 A JP2001251371 A JP 2001251371A JP 2001251371 A JP2001251371 A JP 2001251371A JP 2003069081 A JP2003069081 A JP 2003069081A
- Authority
- JP
- Japan
- Prior art keywords
- lens
- resin
- sealing portion
- resin lens
- led chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 229920005989 resin Polymers 0.000 claims abstract description 62
- 239000011347 resin Substances 0.000 claims abstract description 62
- 239000000463 material Substances 0.000 claims abstract description 20
- 238000007789 sealing Methods 0.000 claims description 38
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 10
- 239000000377 silicon dioxide Substances 0.000 abstract description 5
- 230000000694 effects Effects 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000000470 constituent Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Led Device Packages (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は光度の低下を抑制し
た広い指向角を有する発光素子及びその製造方法に関す
るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device having a wide directional angle in which a decrease in luminous intensity is suppressed, and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】従来、ＬＥＤチップから発光された光を
樹脂レンズで集光する構造の発光素子において、その指
向角を広げるためには、発光するＬＥＤチップを極力樹
脂レンズの底部に近づける方法が取られていた。この方
法で指向角を広げた場合、概略樹脂レンズから放出され
る発光光度と立体角の積は一定であるために、その発光
光度は極端に低下する。2. Description of the Related Art Conventionally, in a light emitting device having a structure in which light emitted from an LED chip is condensed by a resin lens, a method of bringing the emitting LED chip as close as possible to the bottom of the resin lens is used to widen the directional angle. Had been taken. When the directivity angle is widened by this method, the product of the luminous intensity emitted from the resin lens and the solid angle is substantially constant, so that the luminous intensity is extremely reduced.
【０００３】また、発光するＬＥＤチップを樹脂レンズ
の底部から離すと、発光光度は向上するが、樹脂レンズ
の集光作用で指向角は大幅に絞られ、狭い指向角になっ
てしまう。Further, when the LED chip that emits light is separated from the bottom of the resin lens, the luminous intensity is improved, but the directivity angle is greatly reduced by the condensing action of the resin lens, resulting in a narrow directivity angle.
【０００４】そこで、指向角を広げる手段として、直径
数μｍ以下のシリカ（二酸化珪素）の粉末を透明樹脂の
中に混ぜ、この徴粉末によりＬＥＤチップから発光され
た光を拡散させて、指向角を広げる方法が取られてい
る。Therefore, as a means for widening the directivity angle, a powder of silica (silicon dioxide) having a diameter of several μm or less is mixed in a transparent resin, and the fine powder diffuses the light emitted from the LED chip to obtain the directivity angle. The way to spread is taken.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、従来の
方法では、シリカの徴粉末による光の吸収が多く、指向
角は広がるが、光度は低下するという問題があった。However, in the conventional method, there is a problem in that although the fine powder of silica absorbs a large amount of light, the directional angle is widened but the luminous intensity is lowered.
【０００６】[0006]
【課題を解決するための手段】上記した課題を解決する
ため、本発明はＬＥＤチップを封止する透明樹脂の封止
部と、封止部の周囲に形成され、散乱材が混入された樹
脂レンズとを備え、ＬＥＤチップと樹脂レンズが透明樹
脂により光学的に接続されることで、高光度で広い指向
角を実現したものである。In order to solve the above-mentioned problems, the present invention provides a sealing portion of a transparent resin for sealing an LED chip and a resin formed around the sealing portion and mixed with a scattering material. A lens is provided, and the LED chip and the resin lens are optically connected by a transparent resin to realize a high luminous intensity and a wide directional angle.
【０００７】[0007]
【発明の実施の形態】図１は本発明の第１の実施形態を
示す断面図で、１１は樹脂レンズ、１２は封止部、１３
はＬＥＤチップ、１４は金ワイヤ、1５は陽極電極側の
リードフレーム、１６は陰極電極側のリードフレームで
ある。1 is a sectional view showing a first embodiment of the present invention, in which 11 is a resin lens, 12 is a sealing portion, and 13 is a sealing portion.
Is an LED chip, 14 is a gold wire, 15 is a lead frame on the anode electrode side, and 16 is a lead frame on the cathode electrode side.
【０００８】ＬＥＤチップ１３はリードフレーム１６に
搭載された後、金ワイヤ１４によりリードフレーム１５
にワイヤボンディングされ、封止部１２により封止され
る。After the LED chip 13 is mounted on the lead frame 16, the lead frame 15 is connected by the gold wire 14.
Is wire-bonded to and is sealed by the sealing part 12.
【０００９】封止部１２は例えばエポキシ樹脂等の透明
樹脂で、円柱状に形成されている。The sealing portion 12 is made of a transparent resin such as epoxy resin and is formed in a columnar shape.
【００１０】樹脂レンズ１１は封止部１２の周囲に、例
えばエポキシ樹脂等の透明樹脂に散乱材例えばシリカや
ダイヤモンドの微粒子を混入した樹脂で、砲弾型に形成
される。The resin lens 11 is formed in a bullet shape around the sealing portion 12 by a transparent resin such as an epoxy resin mixed with a scattering material such as fine particles of silica or diamond.
【００１１】ＬＥＤチップ１３と樹脂レンズ１１は封止
部１２の透明樹脂で光学的に接続されているので、ＬＥ
Ｄチップ１３から発光された光は封止部１２の透明樹脂
の中を減衰無しで伝播し、散乱材の入った樹脂レンズ１
１に入る。Since the LED chip 13 and the resin lens 11 are optically connected by the transparent resin of the sealing portion 12, LE
The light emitted from the D chip 13 propagates in the transparent resin of the sealing portion 12 without attenuation, and the resin lens 1 containing the scattering material
Enter 1.
【００１２】樹脂レンズ１１の中には散乱材が入ってい
るため、指向角は散乱材の散乱効果で広げられる。散乱
材の有無による指向角の広がりは、散乱材の濃度が２％
〜６％で、散乱材無しより１０度から２０度広がること
が実験で得られている。Since the resin lens 11 contains a scattering material, the directivity angle can be widened by the scattering effect of the scattering material. The spread of the directivity angle depending on the presence or absence of the scattering material is 2% when the concentration of the scattering material is 2%.
It has been experimentally obtained that ˜6% spreads 10 to 20 degrees more than without scattering material.
【００１３】なお、封止部１２の円柱状の透明樹脂の中
に散乱材を入れた場合、この散乱材はＬＥＤチップ１３
から発光された光の強度を減衰する作用のみで、指向角
を広げる作用が全くないことも実験で得られている。When the scattering material is put in the cylindrical transparent resin of the sealing portion 12, the scattering material is used as the LED chip 13.
It has also been experimentally obtained that it has only the effect of attenuating the intensity of light emitted from the device and has no effect of widening the directional angle.
【００１４】従って、封止部１２の透明樹脂１２は散乱
材を混入させないことが光度の低下を抑制し、高光度を
維持することに効果がある。Therefore, it is effective that the transparent resin 12 of the sealing portion 12 does not contain a scattering material in order to suppress a decrease in luminous intensity and maintain a high luminous intensity.
【００１５】なお、樹脂レンズ１１中の散乱材によっ
て、光度は多少低下するが、円柱の封止部１２では光は
全く減衰しないので、従来に比して光度の低下を大巾に
抑制することができる。Although the light intensity is slightly reduced by the scattering material in the resin lens 11, the light is not attenuated at all in the cylindrical sealing portion 12, so that the reduction in the light intensity is greatly suppressed as compared with the conventional case. You can
【００１６】以上のように第１の実施形態によれば、Ｌ
ＥＤチップ１３の封止部１２を透明樹脂で形成し、封止
部１２の周囲に形成した樹脂レンズ１１にだけ散乱材を
混入するようにしたので、光度の低下を抑制しかつ指向
角を広げることができる。As described above, according to the first embodiment, L
Since the sealing portion 12 of the ED chip 13 is formed of a transparent resin and the scattering material is mixed only in the resin lens 11 formed around the sealing portion 12, the decrease in luminous intensity is suppressed and the directional angle is widened. be able to.
【００１７】これにより、発光素子の正面方向からだけ
でなく、斜め方向からも集光した高光度の光を広く視認
することができる。With this arrangement, the light of high luminous intensity can be widely viewed not only from the front direction of the light emitting element but also from the oblique direction.
【００１８】図２は本発明の第２の実施形態を示す断面
図で、２１は樹脂レンズ、２２は封止部、他の構成要素
は第１の実施形態と同じである。FIG. 2 is a sectional view showing a second embodiment of the present invention, in which 21 is a resin lens, 22 is a sealing portion, and other constituent elements are the same as those in the first embodiment.
【００１９】樹脂レンズ２１は、透明樹脂に散乱材を混
入した樹脂で、封止部２２の周囲に形成されるが、砲弾
型のレンズ部２１ａと封止部２２の円周の周囲を包囲す
る円筒部２１ｂとで構成される。The resin lens 21 is made of a transparent resin mixed with a scattering material and is formed around the encapsulation portion 22. The resin lens 21 encloses the circumference of the bullet-shaped lens portion 21a and the encircling portion 22. It is composed of a cylindrical portion 21b.
【００２０】封止部２２はＬＥＤチップ１３を封止し、
透明樹脂で円柱状に形成されるが、円柱の高さが第１の
実施形態より高くなっている。The sealing portion 22 seals the LED chip 13,
The transparent resin is formed into a cylindrical shape, but the height of the cylinder is higher than that in the first embodiment.
【００２１】即ち、樹脂レンズ２１のレンズ部２１ａの
底面が、封止部２２の頂面と接するように構成されてい
る。That is, the bottom surface of the lens portion 21a of the resin lens 21 is configured to be in contact with the top surface of the sealing portion 22.
【００２２】このようにすると、指向角を広げる作用が
なく、光の強度を減衰する作用だけの円柱部分をすべて
透明樹脂にし、散乱材を混入した樹脂レンズ２１の部分
の厚さを薄くできるので、光度の低下を最小に、指向角
を広げるのに理想的な状態になる。By doing so, the cylindrical portion, which does not have the effect of widening the directional angle but only has the effect of attenuating the intensity of light, is made of transparent resin, and the thickness of the resin lens 21 portion mixed with the scattering material can be reduced. , It becomes an ideal state to minimize the decrease in luminous intensity and widen the directional angle.
【００２３】以上のように第２の実施形態によれば、樹
脂レンズ２１のレンズ部２１ａの底面が封止部２２の頂
面と接するので、第１の実施形態の効果に加えて、更に
光度の低下を抑制し、指向角を広げることができる。As described above, according to the second embodiment, since the bottom surface of the lens portion 21a of the resin lens 21 is in contact with the top surface of the sealing portion 22, in addition to the effect of the first embodiment, the luminous intensity is further increased. Can be suppressed and the directional angle can be widened.
【００２４】図３は本発明の第３の実施形態を示す断面
図で、３１は樹脂レンズ、３２は封止部、他の構成要素
は第１の実施形態と同じである。FIG. 3 is a sectional view showing a third embodiment of the present invention, in which 31 is a resin lens, 32 is a sealing portion, and other constituent elements are the same as those in the first embodiment.
【００２５】樹脂レンズ３１及び封止部３２が第１の実
施形態と異なるのは形状だけで、他は同じである。The resin lens 31 and the sealing portion 32 are different from those in the first embodiment only in the shape, and the others are the same.
【００２６】即ち、樹脂レンズ３１、封止部３２共に砲
弾型に形成したもので、ＬＥＤチップ１３から樹脂レン
ズ３１の頂部までの距離のうち、光度の減衰がない透明
樹脂の部分を大きくし、散乱材の入った樹脂レンズ３１
の部分を薄くしたものである。That is, both the resin lens 31 and the sealing portion 32 are formed in a bullet shape, and in the distance from the LED chip 13 to the top of the resin lens 31, the transparent resin portion which does not attenuate the luminous intensity is enlarged, Resin lens 31 with scattering material
Is a thin part.
【００２７】このようにすると指向角の広がりが多少減
少するが、光度の低下が更に抑制されるので、高光度の
必要な用途には適している。In this way, the spread of the directional angle is slightly reduced, but the decrease in luminous intensity is further suppressed, so that it is suitable for applications requiring high luminous intensity.
【００２８】以上のように第３の実施形態によれば、樹
脂レンズ３１、封止部３２共に砲弾型に形成したので、
指向角を広げると共に光度の低下を第１の実施形態より
更に抑制することができる。As described above, according to the third embodiment, since both the resin lens 31 and the sealing portion 32 are formed in a bullet shape,
It is possible to widen the directivity angle and further suppress the decrease in luminous intensity as compared with the first embodiment.
【００２９】図４は本発明の製造方法を示す断面図で、
１０，２０は型である。FIG. 4 is a sectional view showing the manufacturing method of the present invention.
10 and 20 are molds.
【００３０】予めＬＥＤチップ１３とリードフレーム１
５，１６を準備し、ＬＥＤチップ１３をリードフレーム
１６に搭載し、リードフレーム１５と金ワイヤ１４によ
りワイヤボンディングする。The LED chip 13 and the lead frame 1 are previously prepared.
5 and 16 are prepared, the LED chip 13 is mounted on the lead frame 16, and the lead frame 15 and the gold wire 14 are wire-bonded.
【００３１】（ａ）に示すように、ＬＥＤチップ１３を
搭載したリードフレーム１５，１６を上下反転させて型
１０に収容し、透明樹脂を注入してＬＥＤチップ１３と
リードフレーム１５，１６の周囲を封止して封止部１２
を形成する。As shown in (a), the lead frames 15, 16 on which the LED chips 13 are mounted are turned upside down and housed in the mold 10, and a transparent resin is injected to surround the LED chips 13 and the lead frames 15, 16. To seal the sealing portion 12
To form.
【００３２】次に型１０から封止部１２等を取り外し
て、（ｂ）に示すように型２０に収容し、透明樹脂に散
乱材を混入した樹脂を流し込んで封止部１２の周囲に樹
脂レンズ１１を形成する。その際、封止部１２と樹脂レ
ンズ１１は自動的に一体に接着される。Next, the sealing portion 12 and the like are removed from the mold 10 and housed in the mold 20 as shown in (b). The lens 11 is formed. At that time, the sealing portion 12 and the resin lens 11 are automatically bonded together.
【００３３】型２０から樹脂レンズ１１等を取り外す
と、第１の実施形態の発光素子が完成する。By removing the resin lens 11 and the like from the mold 20, the light emitting device of the first embodiment is completed.
【００３４】第２の実施形態を製造する場合には、型１
０の深さを調整すれば良く、また、第３の実施形態を製
造する場合には、型２０の底部を砲弾型に形成すれば良
い。When manufacturing the second embodiment, the mold 1 is used.
The depth of 0 may be adjusted, and in the case of manufacturing the third embodiment, the bottom of the mold 20 may be formed into a shell shape.
【００３５】[0035]
【発明の効果】上記したように、本発明によれば、ＬＥ
Ｄチップの封止部を透明樹脂で形成し、樹脂レンズにの
み散乱材を混入したので、光度の低下を抑制しかつ指向
角を広げることができる。As described above, according to the present invention, LE
Since the sealing portion of the D chip is made of transparent resin and the scattering material is mixed only in the resin lens, it is possible to suppress the decrease in luminous intensity and widen the directional angle.
【図１】本発明の第１の実施形態を示す断面図FIG. 1 is a sectional view showing a first embodiment of the present invention.
【図２】本発明の第２の実施形態を示す断面図FIG. 2 is a sectional view showing a second embodiment of the present invention.
【図３】本発明の第３の実施形態を示す断面図FIG. 3 is a sectional view showing a third embodiment of the present invention.
【図４】本発明の製造方法を示す断面図FIG. 4 is a cross-sectional view showing the manufacturing method of the present invention.
１１，２１，３１ 樹脂レンズ １２，２２，３２ 封止部 １３ ＬＥＤチップ １４ 金ワイヤ １５，１６ リードフレーム ２１ａ レンズ部 ２１ｂ 円筒部 11,21,31 Resin lens 12,22,32 Sealing part 13 LED chip 14 gold wire 15,16 Lead frame 21a lens part 21b Cylindrical part
Claims (6)
止する透明樹脂の封止部と、前記封止部の周囲に形成さ
れ、散乱材が混入された樹脂レンズとを備え、前記ＬＥ
Ｄチップと樹脂レンズは前記透明樹脂により光学的に接
続されることを特徴とする発光素子。1. The LE, comprising: an LED chip; a transparent resin sealing portion for sealing the LED chip; and a resin lens formed around the sealing portion and mixed with a scattering material.
A light emitting device characterized in that the D chip and the resin lens are optically connected by the transparent resin.
脂レンズが砲弾型に形成されたことを特徴とする請求項
１記載の発光素子。2. The light emitting device according to claim 1, wherein the sealing portion is formed in a cylindrical shape, and the resin lens is formed in a bullet shape.
部の円周の周囲を包囲する円筒部とから成ることを特徴
とする請求項２記載の発光素子。3. The light emitting device according to claim 2, wherein the resin lens includes a lens portion and a cylindrical portion surrounding the circumference of the sealing portion.
封止部の頂面と接することを特徴とする請求項３記載の
発光素子。4. The light emitting device according to claim 3, wherein a bottom surface of the lens portion of the resin lens is in contact with a top surface of the sealing portion.
型に形成されたことを特徴とする請求項１記載の発光素
子。5. The light emitting device according to claim 1, wherein the sealing portion and the resin lens are each formed in a bullet shape.
し、前記ＬＥＤチップを前記リードフレームに搭載する
工程と、 前記ＬＥＤチップとリードフレームの周囲を透明樹脂で
封止する封止部を形成する工程と、 前記封止部の周囲に透明樹脂に散乱材を混入した樹脂で
樹脂レンズを形成する工程とを備えたことを特徴とする
発光素子の製造方法。6. A step of preparing an LED chip and a lead frame and mounting the LED chip on the lead frame, and a step of forming a sealing portion for sealing the periphery of the LED chip and the lead frame with a transparent resin. And a step of forming a resin lens around the sealing portion with a resin in which a scattering material is mixed with a transparent resin, the manufacturing method of the light emitting element.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001251371A JP3730546B2 (en) | 2001-08-22 | 2001-08-22 | Light emitting device and manufacturing method thereof |
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| JP2001251371A JP3730546B2 (en) | 2001-08-22 | 2001-08-22 | Light emitting device and manufacturing method thereof |
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| Publication Number | Publication Date |
|---|---|
| JP2003069081A true JP2003069081A (en) | 2003-03-07 |
| JP3730546B2 JP3730546B2 (en) | 2006-01-05 |
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| JP2001251371A Expired - Fee Related JP3730546B2 (en) | 2001-08-22 | 2001-08-22 | Light emitting device and manufacturing method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012033851A (en) * | 2010-07-01 | 2012-02-16 | Okaya Electric Ind Co Ltd | Light-emitting diode |
| JP2015012144A (en) * | 2013-06-28 | 2015-01-19 | 日亜化学工業株式会社 | Light-emitting device and method of manufacturing the same |
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|---|---|---|---|---|
| JPH03119770A (en) * | 1989-09-30 | 1991-05-22 | Mitsubishi Cable Ind Ltd | Light-emitting module and lamp |
| JPH0381653U (en) * | 1989-12-08 | 1991-08-21 | ||
| JPH0463162U (en) * | 1990-10-02 | 1992-05-29 | ||
| JPH0653554A (en) * | 1992-07-28 | 1994-02-25 | Rohm Co Ltd | Optical semiconductor device |
| JPH06104491A (en) * | 1992-09-17 | 1994-04-15 | Rohm Co Ltd | Light emitting diode lamp |
| JP2000223749A (en) * | 1999-01-29 | 2000-08-11 | Seiwa Electric Mfg Co Ltd | Light emitting diode lamp, method for manufacturing the same, chip type light emitting diode element and dot matrix type light emitting diode unit |
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2001
- 2001-08-22 JP JP2001251371A patent/JP3730546B2/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03119770A (en) * | 1989-09-30 | 1991-05-22 | Mitsubishi Cable Ind Ltd | Light-emitting module and lamp |
| JPH0381653U (en) * | 1989-12-08 | 1991-08-21 | ||
| JPH0463162U (en) * | 1990-10-02 | 1992-05-29 | ||
| JPH0653554A (en) * | 1992-07-28 | 1994-02-25 | Rohm Co Ltd | Optical semiconductor device |
| JPH06104491A (en) * | 1992-09-17 | 1994-04-15 | Rohm Co Ltd | Light emitting diode lamp |
| JP2000223749A (en) * | 1999-01-29 | 2000-08-11 | Seiwa Electric Mfg Co Ltd | Light emitting diode lamp, method for manufacturing the same, chip type light emitting diode element and dot matrix type light emitting diode unit |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012033851A (en) * | 2010-07-01 | 2012-02-16 | Okaya Electric Ind Co Ltd | Light-emitting diode |
| JP2015012144A (en) * | 2013-06-28 | 2015-01-19 | 日亜化学工業株式会社 | Light-emitting device and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3730546B2 (en) | 2006-01-05 |
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