JP2003057350A - Signal transfer device, photoelectric conversion device, radiation detection device and system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To square output characteristics in each channel of a signal transfer circuit equipped with input pads and amplifiers. SOLUTION: This signal transfer device is formed by arraying the input pads PAD1, 2 for inputting a signal from the outside and the amplifiers A1, A2 for amplifying the signal inputted through the input pads PAD1, 2, in mutually non-parallel directions. In the device, the values determined by dividing the lengths of connection wires 20, 30 for connecting respectively the input pads PAD1, 2 to the amplifiers A1, A2 by the sectional areas of the connection wires 20, 30 are adjusted to be the same value, and the connection wires 20, 30 have the same parasitic capacities, and a dummy wire N branched from a power supply wire 60 is allowed to cross over with the connection line 20 not crossing over with the power supply wire 60 connected to the amplifier A1 between the connection wires 20, 30.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a signal transfer device, a photoelectric conversion device, a radiation detection device and a system, and more particularly to a medical X-ray detection device, an industrial internal nondestructive inspection device, a digital camera and a copying machine. The present invention relates to a signal transfer device, a photoelectric conversion device, a radiation detection device and a system provided in various electric devices such as an information processing device such as a facsimile and a personal computer.

In the present specification, description will be given assuming that electromagnetic waves such as X-rays, α rays, β rays and γ rays are included in the category of radiation.

[0003]

2. Description of the Related Art Currently, X-ray imaging devices for medical diagnosis are X-ray imaging devices.
The mainstream method is a film system in which the X-rays are exposed to a human body and the transmitted X-rays are applied to a phosphor that converts the light into visible light, and the fluorescence is exposed on a film to obtain in-vivo information of the patient.

Recently, the demand for "digitization of X-ray images" is increasing, and the area sensor in which a large number of solid-state image pickup devices are arranged two-dimensionally is replaced with the above-mentioned film to obtain a solid-state image pickup device. A method of treating image information as digital information has been widely proposed.

If this is realized, not only the diagnosis by a doctor etc. but also the storage, transfer and management of data inside and outside the hospital will be efficiently carried out, and a new and epoch-making medical diagnosis which has never been carried out can be performed. It is thought to be possible.

FIG. 10 is a layout diagram of a part of the photoelectric conversion device in the conventional radiation detecting device. FIG. 10 shows, for example, a photoelectric conversion circuit unit 1 that converts light based on radiation into an electric signal and a read circuit unit 3 that reads the electric signal from the photoelectric conversion circuit unit 1.

The photoelectric conversion circuit section 1 includes photoelectric conversion elements S31 and S32 that convert an optical signal into an electric signal, and a switching element T31 that controls reading of the converted electric signal.
T32, signal wirings M1 and M2 for transmitting electric signals read from the photoelectric conversion elements S31 and S32 when the switching elements T31 and T32 are turned on, and the signal wiring M
1 and M2 are connected to capacitors C1 and C2.

Although 1 × 2 pixels are shown in the photoelectric conversion circuit section 1 for simplification, the number of pixels is actually formed according to the application.

The readout circuit section 3 is a photoelectric conversion circuit section 1
Input signal pad PA for connecting the read circuit section 3 to the read circuit section 3
D1, 2 and analog operational amplifiers A1, A2, B1, B2 for amplifying the electric signals transferred from the photoelectric conversion circuit unit 1 through the signal wirings M1, M2, and the analog operational amplifier A.
1, power supply wirings V _DD and V _SS for supplying electric power to A2, B1 and B2, sampling switches SH1 and SH2 for sampling and holding the electric signals amplified by the analog operational amplifiers A1 and A2, and a sampling capacitor CL1. , CL2.

Further, in FIG. 10, input pads PAD1 and PAD2 are provided.
1 to the input terminals of the first-stage analog operational amplifiers A1 and A2, wiring resistances R1 and R2 and parasitic capacitances CO and CO ′ are shown, and a first-stage control line for switching on / off of the S / H switch is shown. A coupling capacitor CO1 is shown between the analog operational amplifier A2 and the connection line 30.

Here, as shown in FIG. 10, analog operational amplifiers A1, A2, B1 and B2 for two pixels are connected to common power supply lines V _DD and V _SS . This is because the pixel pitch of the photoelectric conversion device becomes narrower with the miniaturization and higher definition of pixels required to detect smaller lesions.
For each pixel, the power wiring V _DD to which the analog operational amplifier is connected,
This is because V _SS cannot be formed. Incidentally, the pixel pitch is required to be, for example, about 80 to 50 μm.

[0012]

However, the first-stage analog operational amplifiers A1 and A of the read circuit section in FIG. 10 are used.
2, the wiring resistances R1 and R2, the parasitic capacitances CO and CO ′, and the coupling capacitor CO1 may affect the output of the channels, and uniform output may not be obtained between the channels.

This is because if the connecting wires 20 and 30 from the respective input signal pads PAD1 and PAD2 and the input of the analog operational amplifiers A1 and A2 shown in FIG. R2 and parasitic capacitance CO, CO '
This is because there is a difference between them.

Here, the thermal noise (4 KTR) generated by the wiring resistances R1 and R2 (R1 <R2 in FIG. 10) is S /
This causes a decrease in N. On the other hand, the voltage of the electric signal is S3
Q of both the electric quantities of the electric signals generated in 1 and S32.
Since [q] is determined by the capacitances C1 and C2 and the input capacitances of the first-stage analog operational amplifiers A1 and A2, a difference occurs as in the following mathematical formula. [Q / (C1 + CO)]> [Q / (C2 + CO ')] {where C1 = C2, CO <CO' in FIG. 10}

Furthermore, since the influences of the parasitic capacitances CO and CO'on the power supply noise are different, the power supply voltage rejection ratio (Power Supp
ly Rejection Ratio (PSRR) and remains. On the other hand, the coupling capacitor CO between the control line S / H and the connection line 30 of the first-stage analog operational amplifier A2 of channel 2
The presence of 1 causes the fixed pattern noise to appear in the output due to the fluctuation due to the sampling pulse only in the channel 2.

FIG. 11 is a waveform diagram of the output signal of the read circuit 3 shown in FIG. FIG. 11 shows a state of serial output when the pattern of FIG. 10 is repeatedly arranged in four columns. As described above, the odd pattern pixels 1, 3, 5 and 7 are randomly generated by the fixed pattern noise and the wiring resistance R1. Although the noise is small, the fixed pattern noise and the random noise due to the wiring resistance R2 are largely superimposed on the even-numbered pixels 2, 4, 6, and 8.

In an IC requiring a high S / N ratio,
A large transistor size is used to reduce noise. Along with this, the layout area of one analog operational amplifier becomes large, and as a result, the physical arrangement position between the analog operational amplifiers becomes far, the difference in the substrate potential fluctuation, the in-chip temperature unevenness, and other analog operational amplifiers. Differences in the output characteristics of each channel are likely to occur due to the difference in the place where the signal is placed.

In particular, the above influence is likely to occur in the input portion (wirings 20 and 30) which is a high impedance node.

Therefore, it is an object of the present invention to make the output characteristics of each channel of a signal transfer circuit provided with an input pad and an amplifier coincide with each other.

[0020]

In order to solve the above-mentioned problems, the signal transfer device of the present invention comprises a first input pad and a second input pad for inputting a signal from the outside, respectively, and the first input pad. Amplifier for amplifying a signal from the second input pad, a second amplifier for amplifying a signal from the second input pad, and a first connection for connecting the first input pad and the first amplifier Line, the second input pad and the second
A second connecting line for connecting to the first amplifier and a wiring connected to the first amplifier, and a direction in which the first input pad and the second input pad are arranged, First
Is arranged in a direction that is non-parallel to the direction in which the second amplifier is arranged, and the first amplifier is arranged closer to the first and second input pads than the second amplifier. In addition, the wiring crosses over the first and second amplifiers.

Further, the photoelectric conversion device of the present invention includes the signal transfer device described above in a reading circuit for reading an electric signal from the photoelectric conversion circuit.

Further, the radiation detecting apparatus of the present invention comprises the above photoelectric conversion device and a phosphor for converting the radiation into an optical signal in the photoelectric conversion device.

Furthermore, the radiation detecting system of the present invention comprises the above radiation detecting device and a processing device for processing the detection result of the radiation detecting device.

[0024]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.

[First Embodiment] FIG. 1 is a sectional view showing a schematic structure of an X-ray detection apparatus according to the first embodiment of the present invention.
FIG. 1 includes a phosphor 103 that converts X-rays into light, and a photoelectric conversion circuit unit 1 in which photoelectric conversion elements that convert the light converted by the phosphor 103 into electric signals are two-dimensionally arranged. A printed circuit board (PCB) equipped with a glass substrate 8, a read circuit unit 3 for reading an electric signal output from the glass substrate 8 side, and a processing unit for processing the electric signal read by the read circuit unit 3. ) 10 and a TCP (Tape Carrier Package) 9 for interconnecting the glass substrate 8, the readout circuit unit 3, and the printed circuit board 10 to each other.

FIG. 2 is a diagram showing a connection state of the glass substrate 8, the readout circuit section 3, the printed circuit board 10 and the TCP 9 of FIG. As shown in FIG. 2, a plurality of pixels 11 including photoelectric conversion elements are formed on the glass substrate 8. Further, in order to connect the ICs mounted on the TCP 9 to the glass substrate 8 and the PCB 10 without the TCPs 9 overlapping each other, as shown in the figure, the IC size requires a certain margin with respect to the TCP size. As a result, the input pitch of the IC is required to be less than the pixel pitch.

FIG. 3 is a schematic configuration diagram of a photoelectric conversion device including the periphery of the photoelectric conversion circuit unit 1 and the readout circuit unit 3 (signal transfer device) provided on the glass substrate 8 of FIG. Figure 3
1 includes a shift register 2, a photoelectric conversion circuit unit 1, a bias power supply 7, capacitors C1 to C3, a read circuit unit 3, and an A / D conversion circuit unit 6 described below.

The shift register 2 includes a register group that outputs a drive signal for controlling the reading of the electric signal from the photoelectric conversion circuit section 1.

The photoelectric conversion circuit section 1 includes photoelectric conversion elements S11 to S33 for converting an optical signal into an electric signal and switching elements T11 to S11 for controlling reading of the converted electric signal.
T33, gate drive wirings G1 to G3 for transmitting the drive signal output from the shift register 2 to the switching elements T11 to T33, and the switching elements T11 to T33.
Signal wirings M1 to M3 for transmitting electric signals read from the photoelectric conversion elements S11 to S33 when the switch is turned on.

The pixel 11 shown in FIG. 2 has at least the photoelectric conversion elements S11 to S33 and the switching element T.
11 to T33. The pixel pitch is, for example, 100 μm for an X-ray digital camera for photographing the chest.
Before and after.

The bias power source 7 includes photoelectric conversion elements S11 to S11.
A bias power supply is applied to drive S33.

The read circuit section 3 includes signal wirings M1 to M.
Analog operational amplifiers A1 to A3 and B1 to B3 for amplifying the electric signal transferred from the photoelectric conversion circuit unit 3 through
And reset means RES for resetting the capacitors C1 to C3
1 to RES3, sampling switches SH1 to SH3 for sampling and holding the electric signals amplified by the analog operational amplifiers A1 to A3, sampling capacitors CL1 to CL3, and sampling capacitors CL1 to CL1
A read switch Sr1 to Sr3 sequentially read from CL3 via the analog operational amplifiers B1 to B3, a shift register 4 for controlling ON / OFF of the read switches Sr1 to Sr3, and an output buffer amplifier 5 for amplifying a read signal. I have it.

The A / D conversion circuit section 6 is provided with conversion means for converting the signal from the reading circuit section 3 from an analog signal to a digital signal.

FIG. 4 is a timing chart for explaining the operation of the photoelectric conversion device of FIG. First, after applying the voltage pulse RES to the reset switches RES1 to RES3 for t4 hours to reset the input load capacitances C1 to C3, the shift register 2 of the switching element drives the gate line drive wiring G1.
When the first voltage pulse for transfer is applied for t1 time to the switching elements, the switching elements T11 to T13 are turned on, and the electric signals stored in the photoelectric conversion elements S11 to S13 in the first row are loaded into the load capacitances of the signal wirings M1 to M3. They are transferred to C1 to C3, respectively.

The electric signals transmitted through the signal wirings M1 to M3 are amplified by the analog operational amplifiers A1 to A3 in the reading circuit section 3, respectively. After that, the sampling switches SH1 to SH3 are t by the S / H pulse.
Turn on for only 2 hours, sampling capacitors CL1-C
The electric signal is transferred to L3.

Then, the read switch Sr is sequentially driven by the shift pulses Sp1 to Sp3 from the shift register 4.
1 to Sr3 are sequentially turned on for t3 hours respectively, so that the parallel electric signals transferred to the sampling capacitors CL1 to CL3 are respectively analog operational amplifiers B1 to B3.
After being amplified by, it is read _out as a serial electric signal from the final output amplifier 5 (V _out ), and the A / D conversion circuit unit 6
Digitized in.

After that, the reset switches RES1 to RE
After applying the voltage pulse RES to S3 to reset the input load capacitance, the read operation of the next row is prepared.

Similarly, by sequentially driving the gate drive wirings G2 and G3 from the shift register 2, all pixel data of the photoelectric conversion elements S21 to S33 are repeatedly read.

In FIG. 3, for the sake of simplicity, 2 × 3 × 3 pixels are used.
Although the three-dimensional photoelectric conversion device is shown, the actual photoelectric conversion device is composed of more pixels depending on its application. For example, for an X-ray digital camera for photographing a chest, the pixel pitch is generally formed at around 100 μm as described above. If the size is about 40 cm x 40 cm, the number of pixels is 40
It is a huge number of about 00 × 4000. A reading circuit unit for reading an electric signal from 4000 pixels is composed of a plurality of ICs.

FIG. 5 is a layout diagram of the read circuit unit 3 of FIG. Here, for simplicity, 2 channels (2
Line) layout is shown. In FIG. 5, V _DD is the first power supply wiring and V _SS is the second power supply wiring.
It should be noted that each V _DD and each V _SS are obtained by branching a plurality of power supply lines connected to a power supply and are electrically connected to each other.

Analog operational amplifiers A1, A2, B1, B
Reference numeral 2 is connected to common first and second power supply wirings V _DD and V _SS via power supply lines 60, 70, 80 and 90, respectively.

PADs 1 and 2 are input signal pads for connecting the photoelectric conversion circuit section 1 and the read circuit section 3. Two
Reference numerals 0 and 30 are connection lines that connect the input signal pads PAD1 and PAD2 to the analog operational amplifiers A1 and A2. S / H is a control line for sampling switches SH1 and SH2, CL
1 and CL2 are sampling capacitors.

A wiring resistance R is provided between the input pads PAD1 and PAD2 and the input terminals of the analog operational amplifiers A1 and A2.
1, R2 and parasitic capacitances CO and CO'are illustrated.

As shown in FIG. 5, in this embodiment, the analog operational amplifiers A1 and A2 are arranged adjacent to each other and further arranged near the input signal pads PAD1 and PAD2. The connection line 20 connecting the input signal pad PAD1 and the analog operational amplifier A1 and the input signal pad PAD2
The wiring resistances R1 and R2 and the parasitic capacitances CO and CO'of the connection line 30 connecting the analog operational amplifier A2 and the analog operational amplifier A2 are the same.

Here, the cross-sectional area of each of the connecting lines 20 and 30 is, for example, 1 μm ² , and the length thereof is, for example, 10 μm to 1 in the horizontal direction of the analog operational amplifier A1.
The length is about 100 μm. Connection line 20, 30
Is determined by the area and height of the analog operational amplifier A1. The shortest distance between the analog operational amplifiers A1 and A2 is 10 μm.

Further, a dummy wiring N is provided on the power supply line connecting the analog operational amplifier A1 and the power supply wiring V _SS so as to cross over the connection line 20. This is the connection line 30
Crosses over the power supply line 60 connecting the analog operational amplifier A1 and the power supply line V _SS, and the electric signal passing through the connection line 30 is affected by the parasitic capacitance of the power supply line 60. This is because the dummy wiring N is intentionally crossed over the connection line 20 so as to be applied to the connection line 20 as well, so that the outputs between the channels 1 and 2 become uniform.

Further, when the connection line 30 crosses over other wiring (not shown) connected to the analog operational amplifier A1 and various wirings not connected to the other analog operational amplifier A1, the same applies. In addition, dummy wiring may be provided on the wiring and the dummy wiring may be crossed over to the connection line 20.

As described above, the lengths of the connecting wires 20 and 30,
In addition to properly adjusting the cross-sectional area, the dummy wirings are crossed over the connection line 20 so that the connection lines 20 and 30 have the same parasitic capacitances CO and CO ′.

As shown in FIG. 5, since the distances between the input signal pads PAD1 and PAD2 and the analog operational amplifiers A1 and A2 are different from each other, the connecting lines 20 are bent to make the connecting lines 20 and 30 longer. The same.

The configurations shown in FIGS. 1 to 3 are equally applicable to the following second to fourth embodiments.

[Second Embodiment] FIG. 6 is a layout diagram of a read circuit unit 3 according to a second embodiment of the present invention. Figure 6
5, the same members as those in FIG. 5 are designated by the same reference numerals. The layout shown in FIG. 6 has an input signal pad PA.
D2 is arranged near the adjacent analog operational amplifier A2. Specifically, the length of the connecting wires 20 and 30 is 10
The length is about 100 μm to 100 μm.

With this layout, the connecting line 2
Since the distance between 0 and 30 becomes shorter, the wiring resistance R
1, R2 and the wiring capacitances CO and CO'become small, and the thermal noise due to the wiring resistances R1 and R2 can be suppressed small.

However, there will be a difference in the lengths of the signal wirings M1 and M2 of the TCP 9 that connect the photoelectric conversion circuit section 1 and the reading circuit section 3, but these wirings are in the IC as described below. Since the resistance and the capacitance can be reduced as compared with the connection lines 20 and 30 of FIG.
Small compared to the inside.

That is, the signal wirings M1 and M2 have, for example, a cross-section radius of about 10 μm and input signal pads PAD1 and
The wiring is formed in a curved shape so that a position higher by about 130 μm from the position 2 is the highest point. On the other hand, the connection lines 20 and 30 have a cross section of about 0.5 μm × 2 μm and are wired in a rectangular shape so as to pass through a position which is higher by about several μm from the position of the semiconductor substrate. Thus, the resistances of the signal wirings M1 and M2 are
About one-third of that, and the capacity is one-fifth to fifty
The influence on the electric signal is smaller than that in the IC.

[Third Embodiment] FIG. 7 is a layout diagram of the read circuit unit 3 according to the third embodiment of the present invention. Figure 7
5, the same parts as those in FIG. 5 are designated by the same reference numerals.

A connection line 20 connecting the input signal pad PAD1 and the analog operational amplifier A1 and the input signal pad PAD2.
The connection line 30 that connects between the analog operational amplifier A2 and the analog operational amplifier A2 corresponds to the first wiring layer and the second wiring layer that are electrically connected via the contact CNT.

Here, the first wiring layer and the second wiring layer are formed in different layers via an insulating layer (SiO ₂ film). The second wiring layer and the power supply wiring V _DD and the power supply wiring V _SS are formed in different layers via an insulating layer (SiO ₂ film) so as not to cause a short circuit.

The second wiring layer for transmitting the signal from the signal input PAD1 to the amplifier A1 and the second wiring layer for transmitting the signal from the signal input PAD2 to the amplifier A2 are both the power supply wiring V _DD and the power supply. It is configured to cross over the wiring V _SS .

In this embodiment, the first wiring layer having the wiring resistances R3 and R5 and the parasitic capacitances C3 and C5 and the second wiring layer having the parasitic resistances R4 and R6 and the parasitic capacitances C4 and C6 are formed. The total wiring resistance and total parasitic capacitance of the connecting lines 20 and 30 are as follows, and the connecting line 20 and the connecting line 30 are
And the wiring resistance and the parasitic capacitance are the same.

R3 + R4≈R5 + R6 C3 + C4≈C5 + C6

Further, in practice, the amplifier A1 is provided with a switch element such as a transistor, and switch control wirings for controlling ON / OFF of the switch element are connected to each other. Here, since each second wiring layer is formed so as to cross over the switch control wiring, the parasitic capacitance and the wiring resistance of the connection lines 20 and 30 are the same.

[Fourth Embodiment] FIG. 8 is a layout diagram of the read circuit unit 3 according to the fourth embodiment of the present invention. Figure 8
5, the same parts as those in FIG. 5 are designated by the same reference numerals. In the present embodiment, as shown in FIG.
The length of 30 is changed mutually. On the other hand, the cross-sectional areas of the connection lines 20 and 30 are also changed in accordance with the difference in length, so that the wiring resistance and the parasitic capacitance of the connection lines 20 and 30 are equalized.

[Fifth Embodiment] FIG. 9 is a schematic configuration diagram of an X-ray diagnostic system according to a fifth embodiment of the present invention. In this embodiment, the X-ray detection device described in any of the first to fourth embodiments is used.

X-ray 60 generated by X-ray tube 6050
60 passes through the chest 6062 of the patient or subject 6061 and enters the X-ray detection apparatus 6040 described in any of the first to fourth embodiments in which a phosphor is mounted on the upper portion. The incident X-ray contains information on the inside of the body of the patient 6061. The phosphor emits light in response to the incidence of X-rays and photoelectrically converts this to obtain electrical information. This information is converted to digital, image processed by the image processor 6070 and viewed on the display 6080 in the control room.

Further, this information can be transferred to a remote place by a transmission means such as a telephone line 6090, can be displayed on a display 6081 such as a doctor room at another place, or can be stored in a storage means such as an optical disc. It is also possible to diagnose. Also the film processor 6
It is also possible to record by 100 on the film 6110.

In this embodiment, the photoelectric conversion device is
I explained the case of applying it to the X-ray diagnostic system.
It can also be applied to a radiation imaging system such as a nondestructive inspection apparatus that uses radiation such as α rays, β rays, and γ rays other than X rays.

As described above, in each of the embodiments of the present invention, the case where the signal transfer device is applied to the medical X-ray detection device and system has been described as an example. However, this signal transfer device is used for the industrial non-destructive inspection. It can be mounted in various electric devices including an amplifier, such as an apparatus, a digital camera, a copying machine, a facsimile, and an information processing apparatus such as a personal computer.

As described above, according to the present embodiment, since the parasitic capacitance and wiring resistance of each connection line are the same,
It is possible to prevent a difference in the output characteristics of each channel. Therefore, there is an effect of improving the S / N ratio, for example.

[0069]

According to the present invention, it is possible to reduce the difference in the output characteristics of each channel.

[Brief description of drawings]

FIG. 1 is a sectional view showing a schematic configuration of an X-ray detection apparatus according to a first embodiment of the present invention.

FIG. 2 is a diagram showing a connection state of a glass substrate 8, a readout circuit unit 3, a printed circuit board 10 and a TCP 9 of FIG.

FIG. 3 is a photoelectric conversion circuit unit 1 provided on the glass substrate 8 of FIG.
FIG. 3 is a schematic configuration diagram including the periphery of a read circuit unit 3 (signal transfer device).

FIG. 4 is a timing chart explaining the operation of the photoelectric conversion device of FIG.

5 is a layout diagram of the read circuit unit 3 of FIG. 1. FIG.

FIG. 6 is a layout diagram of the read circuit unit 3 according to the second embodiment of the present invention.

FIG. 7 is a layout diagram of the read circuit unit 3 according to the third embodiment of the present invention.

FIG. 8 is a layout diagram of the read circuit unit 3 according to the fourth embodiment of the present invention.

FIG. 9 is a schematic configuration diagram of an X-ray diagnostic system according to a fifth embodiment of the present invention.

FIG. 10 is a layout diagram of a part of a photoelectric conversion device in a conventional radiation detection device.

11 is a waveform diagram of an output signal of the read circuit 3 shown in FIG.

[Explanation of symbols]

1 Photoelectric conversion circuit section 2 Drive circuit 3 Read circuit section 4 Drive circuit 5 output buffer amplifier 6 A / D conversion circuit 7 Bias power supply for photoelectric conversion element 8 glass substrates 9 TCP 10 PCB 11 pixels 101 case 102 Lead plate

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) H04N 5/32 H01L 31/00 A 5F088 F term (reference) 2G088 EE01 FF02 GG19 GG20 JJ05 JJ09 JJ31 JJ33 JJ37 KK05 KK20 KK32. LA08

Claims (11)

[Claims] 1. A first for inputting a signal from the outside, respectively
And a second input pad, a first amplifier that amplifies a signal from the first input pad, a second amplifier that amplifies a signal from the second input pad, and the first input pad And a first connection line connecting the first amplifier, a second connection line connecting the second input pad and the second amplifier, and a wiring connected to the first amplifier And a direction in which the first input pad and the second input pad are arranged and a direction in which the first amplifier and the second amplifier are arranged are non-parallel directions. , The first amplifier has the first and the second amplifiers more than the second amplifier.
The signal transfer device is arranged on the input pad side of, and the wiring crosses over the first and second connection lines. 2. The portion of the wiring that crosses over the first connection line is a dummy wiring branched from a wiring that crosses over the second connection line. Signal transfer device. 3. A second wiring not connected to the first amplifier, wherein the second wiring includes the first and second wirings.
Of the second wiring, and a portion of the second wiring which crosses over the first connecting line is a dummy wiring branched from a wiring crossing over the second connecting line. The signal transfer device according to claim 1 or 2. 4. The parasitic capacitances of the first and second connection lines are set to be the same.
The signal transfer device according to claim 1. 5. The first connecting wire and the second connecting wire have the same value obtained by dividing the length of the connecting wire by the cross-sectional area of the connecting wire. 2. The signal transfer device according to item 1. 6. The input pad is arranged at a position connectable from each amplifier by a connecting line having the same length and the same cross-sectional area according to the arrangement of the first and second amplifiers. The signal transfer device according to claim 1. 7. The signal transfer device according to claim 1, wherein the first and second amplifiers are arranged near each other. 8. A signal transfer device in which a plurality of input pads for inputting signals from the outside and a plurality of amplifiers for amplifying signals input via the plurality of input pads are arranged in directions not parallel to each other. The signal transfer device is characterized in that the plurality of amplifiers are amplifiers of a plurality of stages, and the amplifiers of the first stage are arranged closer to the input pad than the amplifiers of the second and subsequent stages. 9. A photoelectric conversion device comprising the signal transfer device according to claim 1 in a read circuit for reading an electric signal from the photoelectric conversion circuit. 10. A radiation detecting device comprising: the photoelectric conversion device according to claim 9; and a phosphor for converting the radiation into an optical signal in the photoelectric conversion device. 11. A radiation detection apparatus according to claim 10,
A radiation detection system comprising: a processing device that processes a detection result of the radiation detection device.