JP2002293885A - Epoxy resin composition and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an epoxy resin composition for sealing a semiconductor, excellent in hot strength, excellent in adhesion with various kinds of members such as a semiconductor device and a lead frame, excellent in a soldering resis tance in mounting parts on a substrate, particularly in the soldering resistance at higher soldering temperature than conventional, and excellent in adhesion of Ni-Pd, Ni-Pd-Au, etc., with a preplating frame. SOLUTION: The epoxy resin composition for sealing the semiconductor is essentially composed of (A) an epoxy resin, (B) a phenol resin, (C) a compound shown by general formula (1) or the hydrolyzed compound thereof, (D) an inorganic filler and (E) a curing promoter.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin composition for semiconductor encapsulation having excellent solder resistance and a semiconductor device using the same.

[0002]

2. Description of the Related Art Transfer molding of an epoxy resin composition is suitable as a method for encapsulating semiconductor elements such as ICs and LSIs at a low cost and suitable for mass production. The phenol resin has been improved to improve the characteristics. However, in recent market trends of miniaturization, weight reduction, and high performance of electronic devices, the integration of semiconductor elements has been increasing year by year, and the surface mounting of semiconductor devices has been promoted. Demands for resin compositions are becoming more stringent. For this reason, a problem that cannot be solved by the conventional epoxy resin composition has appeared. The biggest problem is that
Due to the adoption of surface mounting, the semiconductor device is rapidly exposed to a high temperature of 200 ° C. or more in the solder immersion or solder reflow process, and the stress when the absorbed moisture explosively evaporates,
This is a phenomenon in which cracks occur in the semiconductor device, and peeling occurs at the interface between the cured joint of the epoxy resin composition and each of the plated joints on the semiconductor element, the lead frame, and the inner lead, and the reliability is significantly reduced. .

[0003] In order to improve the reliability reduction due to soldering, the amount of the inorganic filler in the epoxy resin composition is increased to achieve low moisture absorption, high strength, and low thermal expansion, thereby improving solder resistance. A method of improving the flowability and maintaining a low viscosity and high fluidity at the time of molding by using a resin component having a low melt viscosity is becoming common. On the other hand, in terms of reliability after soldering, the adhesiveness of the interface between the cured product of the epoxy resin composition and the base material such as a semiconductor element and a lead frame existing inside the semiconductor device has become very important. If the adhesive force at the interface is weak, peeling occurs at the interface with the substrate after the soldering, and further, cracks occur in the semiconductor device due to the peeling.

Conventionally, for the purpose of improving solder resistance, γ
-Coupling agents such as glycidoxypropyltrimethoxysilane and γ-aminopropyltriethoxysilane have been added to epoxy resin compositions. However, in recent years, the rise in soldering temperature due to lead-free, Ni, Ni-P
With the emergence of pre-plating frames such as d, Ni-Pd-Au, etc., these coupling agents are not sufficient to meet increasingly severe requirements for solder resistance.

[0005]

SUMMARY OF THE INVENTION The present invention relates to an epoxy resin composition for semiconductor encapsulation, which has excellent soldering resistance such that a semiconductor device does not crack or peel off from a substrate even in a soldering process after absorbing moisture. A semiconductor device using the same is provided.

[0006]

Means for Solving the Problems The present invention provides [1] (A)
An epoxy resin, (B) a phenolic resin, (C) a compound represented by the general formula (1) or a hydrolyzate of the compound represented by the general formula (1), (D) an inorganic filler, and (E) a curing accelerator. An epoxy resin composition for semiconductor encapsulation, which is an essential component,

[0007]

Embedded image (Wherein, R1 is an alkoxy group having 1 to 5 carbon atoms, R2 is an alkyl group having 1 to 5 carbon atoms or an alkoxy group having 1 to 5 carbon atoms, m is an integer of 1 to 6, and n is an average value. In 1-3
Positive number of. )

[2] The epoxy resin composition for semiconductor encapsulation according to [1], wherein the epoxy resin is a biphenyl type epoxy resin, a bisphenol type epoxy resin or a stilbene type epoxy resin; The epoxy resin composition for semiconductor encapsulation according to item [1], which is represented by formula (2),

[0009]

Embedded image (Wherein R3 and R4 are alkyl groups having 1 to 6 carbon atoms, which may be the same or different; n is an integer of 0 to 3, m is an integer of 0 to 4; p is an average of 1) A positive number between 10 and 10.)

[4] A phenolic resin represented by the general formula (3)
The epoxy resin composition for semiconductor encapsulation according to the above [1], [2] or [3],

[0011]

Embedded image (In the formula, R5 and R6 are alkyl groups having 1 to 6 carbon atoms, which may be the same or different. N is an integer of 0 to 3, m is an integer of 0 to 4, and p is 1 on average.) A positive number between 10 and 10.)

[5] The compound [1] wherein the compound represented by the general formula (1) or the hydrolyzate of the compound represented by the general formula (1) is preliminarily heated and mixed with all or a part of the epoxy resin or the phenol resin. Item 1], [2], [3] or [4], wherein the epoxy resin composition for semiconductor encapsulation,
[6] Items [1], [2], and [2], wherein the inorganic filler is previously surface-treated with a compound represented by the general formula (1) or a hydrolyzate of the compound represented by the general formula (1). 3],
[4] The semiconductor resin using the epoxy resin composition for encapsulating a semiconductor according to the item [5], [7] the epoxy resin composition for encapsulating a semiconductor according to any of the items [1] to [6]. A semiconductor device characterized by sealing an element.

[0013]

BEST MODE FOR CARRYING OUT THE INVENTION The epoxy resin used in the present invention refers to all monomers, oligomers and polymers having an epoxy group, such as biphenyl type epoxy resin, stilbene type epoxy resin, hydroquinone type epoxy resin and bisphenol F type epoxy resin. Crystalline epoxy resin such as resin, bisphenol A type epoxy resin, phenol aralkyl type epoxy resin (having phenylene skeleton, diphenylene skeleton, etc.), orthocresol novolak type epoxy resin, phenol novolak type epoxy resin,
Dicyclopentadiene-modified phenolic epoxy resin,
Examples include, but are not limited to, triphenolmethane-type epoxy resins, alkyl-modified triphenolmethane-type epoxy resins, triazine nucleus-containing epoxy resins, and naphthol-type epoxy resins. These may be used alone or in combination of two or more. In order to improve the moisture resistance reliability, it is desirable that the amount of chlorine ions, sodium ions and other free ions contained in the epoxy resin used in the present invention is as small as possible. Among these, a crystalline epoxy resin capable of increasing the filling amount of the inorganic filler or a phenol aralkyl type epoxy resin having a diphenylene skeleton is preferable.

Among the crystalline epoxy resins, the melting point is 15
Those having a temperature of 0 ° C. or less are preferred. If the temperature exceeds 150 ° C., it cannot be uniformly dispersed because it does not melt sufficiently during melt-kneading, and a molded article of the epoxy resin composition using this molten mixture becomes non-uniform, and the strength of the epoxy resin composition is different depending on each part. May decrease. Examples of the crystalline epoxy resin satisfying these conditions include a biphenyl type epoxy resin, a bisphenol type epoxy resin, and a stilbene type epoxy resin.

Examples of the biphenyl type epoxy resin include those represented by the general formula (4).

Embedded image (Wherein, R 7 is an alkyl group having 1 to 6 carbon atoms, which may be the same or different; m is an integer of 0 to 4)

As specific examples, 4,4′-dihydroxybiphenyl, 4,4′-dihydroxy-3,3 ′, 5,
5′-tetramethylbiphenyl, 4,4′-dihydroxy-3,3′-ditert-butyl-6,6′-dimethylbiphenyl, 2,2′-dihydroxy-3,3′-di-tert-butyl-6,6 '-Dimethylbiphenyl,
4,4'-dihydroxy-3,3'-ditertiarybutyl-5,5'-dimethylbiphenyl or 4,4'-dihydroxy-3,3 ', 5,5'-tetratertiarybutylbiphenyl and the like (substitution Glycidyl etherified products).

As the bisphenol type epoxy resin,
For example, a compound represented by the general formula (5) is given.

Embedded image

As specific examples, bis (4-hydroxyphenyl) methane, bis (3-methyl-4-hydroxyphenyl) methane, bis (3,5-dimethyl-4-hydroxyphenyl) methane, bis (2,3 , 5-Trimethyl-4-hydroxyphenyl) methane, 1,1-bis (3 ', 5'-dimethyl-4'-hydroxyphenyl)
Ethane, 2,2-bis (4′-hydroxyphenyl) propane, 2,2-bis (3′-methyl-4′-hydroxyphenyl) propane, 2,2-bis (3 ′, 5′-dimethyl-4) '-Hydroxyphenyl) propane, 2,2
-Bis (3'-tert-butyl-4'-hydroxyphenyl) propane, or bis (2-tert-butyl-
Glycidyl ether compounds such as 5-methyl-4-hydroxyphenyl) sulfide are exemplified.

Examples of the stilbene type epoxy resin include those represented by the general formula (6).

Embedded image (Wherein, R10 is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, which may be the same or different.
11 is an alkyl group having 1 to 6 carbon atoms, which may be the same or different. m is an integer from 0 to 4)

As a specific example, 3-tert-butyl-
2,4'-dihydroxy-3 ', 5', 6-trimethylstilbene, 3-tert-butyl-4,4'-dihydroxy-3 ', 5', 6-trimethylstilbene, 3-
Tert-butyl-4,4'-dihydroxy-3 ',
Glycidyl etherified product of 5,5'-trimethylstilbene, 4,4'-dihydroxy-3,3 ', 5,5'-
Tetramethylstilbene, 4,4'-dihydroxy-
3,3′-ditert-butyl-6,6′-dimethylstilbene, 2,2′-dihydroxy-3,3′-di-tert-butyl-6,6′-dimethylstilbene, 2,
4'-dihydroxy-3,3'-ditert-butyl-
6,6′-dimethylstilbene, 2,2′-dihydroxy-3,3 ′, 5,5′-tetramethylstilbene, or 4,4′-dihydroxy-3,3′-ditert-butyl-5,5 ′ -One or more selected from glycidyl etherified products of dimethylstilbene are preferred.

Among the phenol aralkyl type epoxy resins having a diphenylene skeleton, those represented by the general formula (2) are preferred. The epoxy resin of the general formula (2) is
An epoxy resin having two or more epoxy groups in a molecule, and having a diphenylene skeleton between epoxy groups. The cured product of the epoxy resin composition using the epoxy resin of the general formula (2) and the phenolic resin has a low crosslinking density, is highly flexible, and has a high hydrophobic structure, and thus has a low moisture absorption rate. Further, the thermal stress during molding of the epoxy resin composition or the stress generated in the soldering process after absorbing moisture of the molded semiconductor device is reduced, so that the solder resistance is improved. On the other hand, since the hydrophobic structure between the epoxy groups is a rigid diphenylene skeleton, the crosslink density is low, but it has the characteristic of less decrease in heat resistance,
Little decrease in strength when heated.

Specific examples of the epoxy resin represented by the general formula (2) are shown below, but are not limited thereto.

Embedded image

The phenolic resin used in the present invention refers to all monomers, oligomers and polymers having a phenolic hydroxyl group in the molecule. Resin, triphenol methane type resin, phenol aralkyl resin (having phenylene skeleton, diphenylene skeleton, etc.), naphthol aralkyl resin (phenylene skeleton,
Having a diphenylene skeleton) and the like, but are not limited thereto. These can be used alone or in 2
You may use together and use more than types. In order to improve the moisture resistance reliability, it is desirable that chlorine ions, sodium ions, and other free ions contained in the phenol resin are as small as possible.

Of these, phenol resins represented by the general formula (3) are preferred. The phenolic resin of the general formula (3) is a phenolic resin having two or more phenolic hydroxyl groups in one molecule, and has a diphenylene skeleton between the phenolic hydroxyl groups. The cured product of the epoxy resin composition using the epoxy resin and the phenolic resin of the general formula (3) has a low crosslink density, is high in flexibility, and has a low hydrophobicity because it contains many hydrophobic structures. Further, the thermal stress during molding of the epoxy resin composition or the stress generated in the soldering process after absorbing moisture of the molded semiconductor device is reduced, so that the solder resistance is improved. On the other hand, since the hydrophobic structure between the phenolic hydroxyl groups is a rigid diphenylene skeleton, the crosslink density is low but the heat resistance is not significantly reduced. Specific examples of the phenolic resin represented by the general formula (3) are shown below, but are not limited thereto.

Embedded image

The equivalent ratio of the epoxy groups of all epoxy resins to the phenolic hydroxyl groups of all phenolic resins is preferably 0.6 to 1.5, particularly preferably 0.8 to 1.2.
It is. If the ratio is out of the range of 0.6 to 1.5, the curability, the moisture resistance reliability and the like may be reduced.

The compound represented by the general formula (1) and the hydrolyzate of the compound represented by the general formula (1) of the present invention act as a silane coupling agent. Generally, a silane coupling agent is a compound characterized by having a silanol group and an organic functional group in the same molecule, but the silane coupling agent of the present invention is characterized by having an acid anhydride structure. I do. Since it has an acid anhydride structure, it does not react with the base material surface or other components in the material and is stable in a free state during storage of the resin composition. The ring is opened by moisture such as water adhering to the surface,
Since it reacts with the surface of the base metal and the like to improve the adhesion, the solder resistance is improved. In particular, epoxy resin compositions for semiconductors using the silane coupling agent include copper lead frames and N
Solder resistance is improved in a pre-plating frame of i, Ni-Pd, Ni-Pd-Au or the like. Further, the silane coupling agent reacts with the surface of the base metal and chemically bonds with the inorganic filler at the same time, so that the epoxy resin composition to which the silane coupling agent is added has improved heat strength.

In the hydrolyzate of the compound represented by the general formula (1) of the present invention, since the alkoxy group has been hydrolyzed in advance, it can easily form a hydrogen bond or a covalent bond with a hydroxyl group on the surface of an inorganic filler or various substrates. Is formed, and the solder resistance can be improved. The method of hydrolysis is not particularly limited, and examples thereof include a method in which a silane coupling agent and pure water are mixed and sufficiently stirred and mixed until the mixture does not separate into two layers.

The silane coupling agent of the present invention can be used in combination with another silane coupling agent as long as its properties are not impaired. As silane coupling agents that can be used in combination,
Refers generally to silane compounds having an alkoxysilyl group and an organic functional group such as an epoxy group in one molecule, for example, γ-aminopropyltriethoxysilane, N-β (aminoethyl) -γ-aminopropyltrimethoxysilane, N -Phenyl-γ-aminopropyltrimethoxysilane, γ-
Silane having an epoxy group such as silane having an amino group such as ureidopropyltriethoxysilane, γ-glycidoxypropyltrimethoxysilane, and silane having an epoxy group such as β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane;
Silanes having a mercapto group such as -mercaptopropyltrimethoxysilane, silanes having a vinyl group such as vinyltrimethoxysilane, and silanes having a methacryl group such as γ- (methacryloxypropyl) trimethoxysilane. However, the present invention is not limited to this. These may be used alone or in combination of two or more. As the compounding amount of the silane coupling agent of the present invention,
The content is preferably 0.05 to 2% by weight, and particularly preferably 0.1 to 0.4% by weight in the total epoxy resin composition.

Normally, the coupling agent is mixed into the epoxy resin composition by integral blending, but the silane coupling agent of the present invention is heated and mixed in advance with all or part of the epoxy resin or phenol resin. Is also good. The silane coupling agent of the present invention is also useful for improving the affinity at the interface between the various base materials present inside the semiconductor device and the cured product of the epoxy resin composition, and improving the adhesiveness at the interface by forming a chemical bond. effective. In this case, it is necessary that the compounded silane coupling agent easily and efficiently migrates to the interface with various substrates at the time of molding the epoxy resin composition. An effective method for this is a method in which the silane coupling agent of the present invention is previously mixed with the resin component by heating.

The silane coupling agent of the present invention, when present on the surface of the inorganic filler, chemically binds the inorganic filler to the organic component in the epoxy resin composition, and is effective for improving the adhesiveness at the interface. It is considered to be. In order to improve the adhesion at the interface between the inorganic filler and the organic component as described above, the silane coupling agent of the present invention must be present on the surface of the inorganic filler, and more preferably be adsorbed or immobilized. Necessary, for this reason, if the surface of the inorganic filler is treated with the silane coupling agent of the present invention, the adhesiveness at the interface is improved, which is effective in improving the strength at heat and the solder resistance.
As a method of treating the surface of the inorganic filler with the silane coupling agent of the general formula (1), for example, a solution of the silane coupling agent or a hydrolyzate thereof or an alcohol thereof is sprayed on the stirred inorganic filler. After further stirring, the mixture is left at room temperature or heated to obtain a surface-treated inorganic filler. In addition to the use of the surface-treated inorganic filler, a method of previously heating and mixing the silane coupling agent of the present invention with the integral blend or the resin component may be used in combination.

The type of the inorganic filler used in the present invention is not particularly limited, and those generally used for a sealing material can be used. For example, fused silica, fused spherical silica, crystalline silica, secondary aggregated silica, alumina, titanium white, aluminum hydroxide and the like can be mentioned, and these may be used alone or in combination of two or more. Particularly, fused spherical silica is preferable. The shape is preferably infinitely spherical, and the filling amount can be increased by mixing particles having different particle sizes. The content of the inorganic filler is preferably 65 to 94% by weight in the total epoxy resin composition, more preferably 7 to 94% by weight.
5 to 91% by weight. When the content is less than 65% by weight, the reinforcing effect of the inorganic filler is not sufficiently exhibited, and the amount of the resin component which is a factor of moisture absorption increases, so that the moisture absorption of the cured product of the epoxy resin composition increases. Therefore, cracks may easily occur in the semiconductor device during the soldering process. If the content exceeds 94% by weight, the fluidity of the epoxy resin composition is reduced, and poor filling, chip shift, pad shift, and wire sweep may easily occur during molding.

The curing accelerator used in the present invention includes:
Any substance that promotes a crosslinking reaction between the epoxy resin and the phenol resin may be used. Examples thereof include amine compounds such as 1,8-diazabicyclo (5,4,0) undecene-7, triphenylphosphine, and tetraphenylphosphonium. Organic phosphorus compounds such as tetraphenylborate salts, 2
Imidazole compounds such as -methylimidazole; and the like, but are not limited thereto. These may be used alone or in combination of two or more.

The epoxy resin composition of the present invention comprises (A)
In addition to the component (E), if necessary, brominated epoxy resins, antimony oxide, flame retardants such as phosphorus compounds, inorganic ion exchangers such as bismuth oxide hydrate, coloring agents such as carbon black and red iron oxide, silicone oil, Various additives such as a low-stress agent such as silicone rubber, a release agent such as natural wax, synthetic wax, higher fatty acid and its metal salts or paraffin, and an antioxidant can be blended. The epoxy resin composition of the present invention is obtained by mixing the components (A) to (E) and other additives using a mixer, melt-kneading with a kneader such as a hot roll, a heating kneader or an extruder, and cooling. Obtained by grinding. In order to manufacture a semiconductor device by encapsulating an electronic component such as a semiconductor element using the epoxy resin composition of the present invention, it is sufficient to cure and mold by a molding method such as a transfer mold, a compression mold, and an injection mold. In particular, the epoxy resin composition of the present invention may be used when the soldering temperature is higher than before, or when Ni, N
It is suitable for a semiconductor device using a pre-plating frame such as i-Pd or Ni-Pd-Au.

Hereinafter, the present invention will be described specifically with reference to Examples, but the present invention is not limited thereto. The mixing ratio is by weight. Example 1 6.2 parts by weight of a resin mainly composed of a biphenyl type epoxy resin of the formula (7) (epoxy equivalent: 190, melting point: 105 ° C.)

Embedded image

5.7 parts by weight of a phenol aralkyl resin of the formula (8) (hydroxyl equivalent: 174, softening point: 75 ° C.)

Embedded image

0.4 parts by weight of a compound of the formula (9) (hereinafter referred to as silane coupling agent A)

Embedded image

Fused spherical silica 87.0 parts by weight 1,8-diazabicyclo (5,4,0) undecene-7 (hereinafter referred to as DBU) 0.2 part by weight Carbon black 0.2 part by weight Carnauba wax 0.3 part by weight Part was mixed at room temperature using a mixer and the surface temperature was 90
The mixture was kneaded using two rolls at a temperature of 45 ° C. and 45 ° C., cooled and pulverized to obtain an epoxy resin composition. The obtained epoxy resin composition was evaluated by the following method. Table 1 shows the results.

Evaluation method Spiral flow: Using a mold for measuring spiral flow according to EMMI-1-66, using a mold temperature of 175 ° C.
The measurement was performed at an injection pressure of 6.9 MPa and a curing time of 120 seconds.
The unit is cm. Heat strength: Flexural strength at 240 ° C. is determined according to JIS K 691.
It measured according to 1. The unit is N / mm2. Solder resistance: Using a transfer molding machine, mold temperature 1
75 ° C., injection pressure 7.4 MPa, curing time 120 sec.
00 pin TQFP (Package size is 14 × 14m
m, thickness 1.4mm, silicon chip size is 8.0x
8.0 mm, and the lead frame was made of Ni-Pd-Au), and post-cured at 175 ° C. for 8 hours. The obtained package was left for 72 hours or 168 hours in an environment of 85 ° C. and 85% relative humidity, and then placed in a solder bath at 260 ° C. for 10 hours.
Soaked for seconds. External cracks were observed with a microscope, and the crack occurrence rate [(crack occurrence rate) = (number of crack occurrence packages) / (total number of packages) × 100] was expressed in%. Also, the ratio of the peeling area between the chip and the cured product of the epoxy resin composition was measured using an ultrasonic flaw detector, and the peeling rate [(peeling rate) = (peeling area) / (chip area) × 10
0], the average value of the five packages was determined, and the results were expressed in%.

Examples 2 to 9 and Comparative Examples 1 to 2 According to the formulations shown in Table 1, an epoxy resin composition was obtained in the same manner as in Example 1, and evaluated in the same manner as in Example 1. Table 1 shows the results. The details of the epoxy resin, phenolic resin, hydrolyzate, heated mixture, and surface-treated inorganic filler used in the examples other than Example 1 are shown below. -Orthocresol novolak type epoxy resin (epoxy equivalent 196, softening point 55 ° C)-Resin containing stilbene type epoxy resin of formula (10) as a main component (epoxy equivalent 187, melting point 110 ° C)

Embedded image

A phenol aralkyl type epoxy resin of the formula (11) (epoxy equivalent: 272, softening point: 58 ° C.)

Embedded image

A phenol aralkyl resin of the formula (12) (hydroxyl equivalent: 200, softening point: 65 ° C.)

Embedded image ・ Phenol novolak resin (hydroxyl equivalent 105, softening point 105 ° C)

Compound of formula (13) (hereinafter referred to as silane coupling agent B)

Embedded image

[Production Example of Hydrolyzate A] The silane coupling agent A and pure water are mixed at a weight ratio of 80:20, and the mixture is sufficiently stirred and mixed until the mixture does not separate into two layers. Obtained.

[Production Example of Heated Mixture] (Molted Mixture A) 6.2 parts by weight of a resin containing a biphenyl epoxy resin of the formula (7) as a main component is completely melt-mixed at 110 ° C., followed by silane coupling. 0.4 parts by weight of Agent A was added to obtain a molten mixture A. (Molten mixture B) After completely melting 5.7 parts by weight of the phenol aralkyl resin of the formula (8) at 110 ° C, 0.2 part by weight of a silane coupling agent B was added to obtain a molten mixture B.

[Production Example of Surface-treated Inorganic Filler] (Treatment Silica A) 0.4 parts by weight of a silane coupling agent A was added dropwise while stirring 87 parts by weight of fused spherical silica with a mixer. After continuing stirring as it is for 15 minutes, it was left at room temperature for 8 hours to obtain treated silica A. (Treatment Silica B) While stirring 87 parts by weight of fused spherical silica with a mixer, 0.2 parts by weight of a silane coupling agent B was added dropwise. After continuing stirring for 15 minutes,
After heating at 70 ° C. for 2 hours, treated silica B was obtained.

[Table 1]

[0046]

According to the present invention, the heat resistance is excellent, the adhesiveness to various members such as semiconductor elements and lead frames, the soldering resistance at the time of mounting on a substrate, especially the resistance when the soldering temperature is higher than before. Excellent solderability, Ni, Ni-Pd, Ni-P
An epoxy resin composition for encapsulating a semiconductor having excellent adhesion to a pre-plating frame such as d-Au and a semiconductor device using the same are obtained.

Continued on the front page F-term (reference) 4J002 CC04X CC05X CC06X CC08X CD03W CD05W CE00W CE00X DE137 DE147 DJ017 EU118 EU138 EW148 EW178 EX056 EY018 FA087 FB127 FD017 FD090 FD130 FD158 FD160 GQ05 4J036 AA01 DC07 AF07 DD07 GA23 GA28 JA07 4M109 AA01 BA01 CA21 EA02 EA03 EB03 EB04 EB06 EB12 EB17 EC05 EC09

Claims (7)

[Claims] 1. An epoxy resin, (B) a phenolic resin, (C) a compound represented by the general formula (1) or a hydrolyzate of the compound represented by the general formula (1), and (D) an inorganic filler. And (E) an epoxy resin composition for semiconductor encapsulation, comprising a curing accelerator as an essential component. Embedded image (Wherein, R1 is an alkoxy group having 1 to 5 carbon atoms, R2 is an alkyl group having 1 to 5 carbon atoms or an alkoxy group having 1 to 5 carbon atoms, m is an integer of 1 to 6, and n is an average value. In 1-3
Positive number of. ) 2. The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the epoxy resin is a biphenyl type epoxy resin, a bisphenol type epoxy resin or a stilbene type epoxy resin. 3. The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the epoxy resin has the general formula (2). Embedded image (Wherein R3 and R4 are alkyl groups having 1 to 6 carbon atoms, which may be the same or different; n is an integer of 0 to 3, m is an integer of 0 to 4; p is an average of 1) A positive number between 10 and 10.) 4. The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the phenolic resin has the general formula (3). Embedded image (In the formula, R5 and R6 are alkyl groups having 1 to 6 carbon atoms, which may be the same or different. N is an integer of 0 to 3, m is an integer of 0 to 4, and p is 1 on average.) A positive number between 10 and 10.) 5. The compound represented by the general formula (1) or the hydrolyzate of the compound represented by the general formula (1) is heated and mixed in advance with all or a part of an epoxy resin or a phenol resin. 5. The epoxy resin composition for semiconductor encapsulation according to 2, 3, or 4. 6. The inorganic filler which has been previously surface-treated with a compound represented by the general formula (1) or a hydrolyzate of the compound represented by the general formula (1). Epoxy resin composition for semiconductor encapsulation. 7. A semiconductor device comprising a semiconductor element encapsulated by using the epoxy resin composition for semiconductor encapsulation according to claim 1.