JP2002261202A - Liquid-sealing resin composition and semiconductor device - Google Patents
Liquid-sealing resin composition and semiconductor deviceInfo
- Publication number
- JP2002261202A JP2002261202A JP2001053293A JP2001053293A JP2002261202A JP 2002261202 A JP2002261202 A JP 2002261202A JP 2001053293 A JP2001053293 A JP 2001053293A JP 2001053293 A JP2001053293 A JP 2001053293A JP 2002261202 A JP2002261202 A JP 2002261202A
- Authority
- JP
- Japan
- Prior art keywords
- resin composition
- sealing resin
- liquid sealing
- liquid
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007789 sealing Methods 0.000 title claims abstract description 40
- 239000011342 resin composition Substances 0.000 title claims abstract description 31
- 239000004065 semiconductor Substances 0.000 title claims abstract description 9
- 239000007788 liquid Substances 0.000 claims abstract description 35
- 230000004907 flux Effects 0.000 claims abstract description 15
- 238000005259 measurement Methods 0.000 claims abstract description 14
- 239000003795 chemical substances by application Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 9
- 239000003822 epoxy resin Substances 0.000 claims description 7
- 229920000647 polyepoxide Polymers 0.000 claims description 7
- 230000001588 bifunctional effect Effects 0.000 claims description 3
- 125000003700 epoxy group Chemical group 0.000 claims description 3
- 230000000630 rising effect Effects 0.000 claims description 2
- 229920005989 resin Polymers 0.000 abstract description 23
- 239000011347 resin Substances 0.000 abstract description 23
- 239000000463 material Substances 0.000 abstract description 21
- 230000000694 effects Effects 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 abstract description 2
- 229910000679 solder Inorganic materials 0.000 description 18
- 238000005304 joining Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000001603 reducing effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229930192627 Naphthoquinone Natural products 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 150000002791 naphthoquinones Chemical class 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000011417 postcuring Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81905—Combinations of bonding methods provided for in at least two different groups from H01L2224/818 - H01L2224/81904
- H01L2224/81907—Intermediate bonding, i.e. intermediate bonding step for temporarily bonding the semiconductor or solid-state body, followed by at least a further bonding step
Landscapes
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、フリップチップの
バンプと基板との接合、及びそのバンプ保護のために液
状封止樹脂を用いて、接合と封止を一括に行うことがで
きる液状封止樹脂組成物に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid sealing method in which bonding and sealing can be performed at a time by using a liquid sealing resin for bonding a flip chip bump to a substrate and protecting the bump. The present invention relates to a resin composition.
【０００２】[0002]
【従来の技術】近年半導体チップの大型化、パッケージ
の多ピン化、多様化に伴い周辺材料である樹脂材料に対
する信頼性の要求は年々厳しいものとなってきている。
従来はリードフレームに半導体チップを接着しモールド
樹脂で封止したパッケージが主流であったが、多ピン化
の限界からボールグリッドアレイ（ＢＧＡ）の様なパッ
ケージが増えてきている。2. Description of the Related Art In recent years, as semiconductor chips have become larger, packages have more pins, and diversification, the demand for reliability of resin materials as peripheral materials has been stricter year by year.
Conventionally, a package in which a semiconductor chip is bonded to a lead frame and sealed with a mold resin has been mainstream, but a package such as a ball grid array (BGA) has been increasing due to the limit of increasing the number of pins.
【０００３】更にＩＣチップの高集積化、高密度化とＩ
Ｃパッケージの小型化という要求からフリップチップ実
装方式が登場し、ＱＦＰなどはモールドタイプの大型パ
ッケージから小型パッケージへ移行している。[0003] Furthermore, high integration and high density of IC chips and I
Flip-chip mounting has emerged in response to the demand for smaller C packages, and QFPs have shifted from large mold-type packages to small packages.
【０００４】このようなフリップチップパッケージは通
常アンダーフィル材と呼ばれる毛細管現象を用いてチッ
プと基板の間の狭いギャップ内に充填させる。しかし、
この方式では、フリップチップや基板の半田酸化膜を除
去するためにフラックスを塗布する工程、パッケージを
組み立てる工程、フラックス残渣を洗浄する工程、液状
封止樹脂材料であるアンダーフィル材を塗布する工程、
狭いギャップ内を完全に充填するまでの時間等硬化工程
とプロセス工程が長く、その短縮化が大きな課題であっ
た。[0004] Such a flip chip package is filled in a narrow gap between a chip and a substrate by using a capillary phenomenon usually called an underfill material. But,
In this method, a step of applying a flux to remove a solder oxide film on a flip chip or a substrate, a step of assembling a package, a step of cleaning a flux residue, a step of applying an underfill material which is a liquid sealing resin material,
The hardening step and the process step, such as the time until the narrow gap is completely filled, are long, and shortening the process is a major issue.
【０００５】その問題を解決するため、樹脂材料自体に
フラックス作用を持たせ、フリップチップ接合と樹脂封
止を同時に行うことを目的にノンフローアンダーフィル
材料が考え出された。[0005] To solve the problem, a non-flow underfill material has been devised for the purpose of imparting a flux action to the resin material itself and simultaneously performing flip chip bonding and resin sealing.
【０００６】ノンフローアンダーフィル材料は、一般的
に液状エポキシ樹脂、硬化剤、フラックス成分、場合に
よっては信頼性を高めるためにフィラーが添加される
が、材料自体がフラックス作用を有していればよいの
で、硬化剤や主剤自体にフラックス作用を及ぼすような
官能基を付けることも考えられている。しかし、半田で
形成されているバンプを接合させつつ樹脂材料自身は封
止をしなければならないので、半田が溶融前には硬化せ
ず、バンプ接合後に速やかに硬化する材料が望ましい。
それは、半田が溶融する前に樹脂材料が硬化してしまう
とバンプ接続性が極端に低下したり、逆に硬化が遅いと
リフローやパルスヒートで接合させた後にポストキュア
が必要となり、サイクルタイムが伸びてしまい、ノンフ
ローアンダーフィル材料の目的から外れてしまうからで
ある。A non-flow underfill material is generally added with a liquid epoxy resin, a curing agent, a flux component, and, in some cases, a filler in order to enhance reliability, but if the material itself has a flux action. For this reason, it has been considered to add a functional group that exerts a flux action to the curing agent or the base material itself. However, since the resin material itself must be sealed while bonding the bumps formed of solder, a material that does not cure before the solder is melted but quickly cures after the bumps are bonded is desirable.
This is because if the resin material is cured before the solder melts, the bump connectivity will be extremely reduced.On the other hand, if the curing is slow, post-curing will be required after joining by reflow or pulse heating, and the cycle time will be reduced. The reason for this is that the material is stretched and deviates from the purpose of the non-flow underfill material.
【０００７】[0007]
【発明が解決しようとする課題】本発明は、バンプ接続
のためのフラックス特性の高活性維持と同時に封止のた
めの硬化を速やかに行うことができ、高接続信頼性を有
する液状封止樹脂材料及び半導体装置を提供するもので
ある。DISCLOSURE OF THE INVENTION The present invention provides a liquid sealing resin having a high connection reliability, in which the flux characteristics for bump connection can be maintained at a high activity and curing for sealing can be rapidly performed. A material and a semiconductor device are provided.
【０００８】[0008]
【課題を解決するための手段】本発明は、フリップチッ
プパッケージの接合と封止を同時に行うことができる液
状封止樹脂組成物において、定率で室温から温度を上げ
たときの該液状封止樹脂組成物の動的粘弾性測定におけ
る粘度挙動が、１７０℃で１Ｐａ・ｓ以下である液状封
止樹脂組成物である。SUMMARY OF THE INVENTION The present invention relates to a liquid sealing resin composition capable of simultaneously performing bonding and sealing of a flip-chip package. The liquid sealing resin composition has a viscosity behavior of 1 Pa · s or less at 170 ° C. in dynamic viscoelasticity measurement of the composition.
【０００９】更に好ましい形態としては、液状封止樹脂
組成物の動的粘弾性測定における測定条件が、昇温速度
５〜４０℃/ｍｉｎ、歪み値１〜５０％、振動数１〜１
００ｒａｄ/ｓｅｃであり、液状封止樹脂組成物が、二
官能以上のエポキシ基を有するエポキシ樹脂、硬化剤を
含み、液状封止樹脂組成物がフラックス特性を有する液
状封止樹脂組成物である。また、上記の液状封止樹脂組
成物を用いて封止された半導体装置である。In a more preferred embodiment, the measurement conditions in the dynamic viscoelasticity measurement of the liquid encapsulating resin composition include a temperature rising rate of 5 to 40 ° C./min, a strain value of 1 to 50%, and a frequency of 1 to 1
00 rad / sec, the liquid sealing resin composition contains an epoxy resin having a bifunctional or more epoxy group and a curing agent, and the liquid sealing resin composition has a flux property. A semiconductor device sealed using the above liquid sealing resin composition.
【００１０】[0010]
【発明の実施の形態】本発明について詳細に説明する。
本発明で用いる動的粘弾性測定とは、被測定物をコーン
などで挟み込み、ある外力をかけながらその粘弾性や粘
度を測定するものであり、被測定物の粘度挙動や弾性率
における温度依存性やその他の外力に対する依存性を測
定するのに適している。ここではそのコーンなどの回転
運動距離を歪み、角速度を振動数と呼ぶ。DETAILED DESCRIPTION OF THE INVENTION The present invention will be described in detail.
The dynamic viscoelasticity measurement used in the present invention is to measure the viscoelasticity or viscosity of an object to be measured by sandwiching the object with a cone or the like and applying a certain external force. Suitable for measuring gender and other dependencies on external forces. Here, the rotational movement distance of the cone or the like is distorted, and the angular velocity is called a frequency.
【００１１】本発明による液状封止樹脂組成物の室温か
ら定率に温度を上げたときの動的粘弾性測定における粘
度挙動が、１７０℃で１Ｐａ・ｓ以下であり、より好ま
しくは、０．０１〜０．５Ｐａ・ｓの範囲である。動的
粘度の値が１７０℃において１Ｐａ・ｓを超えると、樹
脂全体の粘度自体も高くなり、半田バンプの接合時に半
田が濡れ拡がることを抑制し、その接合率の低下を招く
可能性がある。また、０．０１Ｐａ・ｓより下回ると、
粘度が低すぎるため、ハンドリング中やリフロー炉通過
中の僅かな振動によりチップずれを起こしてしまう可能
性があるために好ましくない。The viscosity behavior of the liquid sealing resin composition according to the present invention in dynamic viscoelasticity measurement when the temperature is raised from room temperature to a constant rate is 1 Pa · s or less at 170 ° C., more preferably 0.01 ０．５0.5 Pa · s. When the value of the dynamic viscosity exceeds 1 Pa · s at 170 ° C., the viscosity itself of the resin also increases, which suppresses the spread and spread of the solder at the time of joining the solder bumps, which may cause a decrease in the joining rate. . In addition, when it is lower than 0.01 Pa · s,
Since the viscosity is too low, there is a possibility that chip displacement may occur due to slight vibration during handling or passage through a reflow furnace, which is not preferable.
【００１２】本発明における液状封止樹脂組成物の動的
粘弾性測定において、その時の測定条件は、昇温速度５
〜４０℃/ｍｉｎ、歪み値１〜５０％、振動数１〜１０
０ｒａｄ/ｓｅｃであり、室温から測定したときの動的
粘弾性測定であることが好ましい。昇温速度において、
装置の能力内であるならば特に制限はないが、４０℃/
ｍｉｎ以上で昇温すると被測定物が急激に加熱され、直
ちに硬化が促進されるために正確な粘度挙動が測定でき
ない恐れがあり好ましくない。また、５℃/ｍｉｎ以下
で極端に緩やかに昇温した場合、長時間熱履歴がかかる
ために、正確な粘度上昇ポイント以前から硬化が始ま
り、その正確な粘度上昇挙動が見られない恐れがあり、
好ましくない。また、歪み値や振動数などの外力におい
て、歪み値が１％以下、振動数が１％以下であると被測
定物に伝わる力を感知できない恐れがあるので好ましく
ない。また、歪み値が５０％以上、振動数が１００ｒａ
ｄ/ｓｅｃであると、必要以上に外力が加わってしまう
ために、正確な粘度や粘弾性などの測定が出来なくなる
恐れがあるので好ましくない。In the measurement of the dynamic viscoelasticity of the liquid sealing resin composition of the present invention, the measurement conditions at that time are as follows.
４０40 ° C./min, strain value 1-50%, frequency 1-10
0 rad / sec, and is preferably a dynamic viscoelasticity measurement when measured from room temperature. At the heating rate,
There is no particular limitation as long as it is within the capability of the device,
If the temperature is raised for more than min, the object to be measured is rapidly heated, and the curing is immediately promoted. In addition, when the temperature rises extremely slowly at 5 ° C./min or less, since the heat history is applied for a long time, the curing starts before the accurate viscosity increase point, and the accurate viscosity increase behavior may not be observed. ,
Not preferred. Further, with respect to an external force such as a strain value or a frequency, it is not preferable that the strain value is 1% or less and the frequency is 1% or less because a force transmitted to the object to be measured may not be detected. Further, the strain value is 50% or more, and the frequency is 100 ra.
When d / sec, external force is applied more than necessary, and accurate measurement of viscosity, viscoelasticity, and the like may not be performed.
【００１３】本発明における液状封止樹脂組成物は、熱
硬化性樹脂が好ましく、更には常温で液状のものが好ま
しい。例えば、エポキシ樹脂、シアネート樹脂、ウレタ
ン樹脂、ポリブタジエン樹脂、シリコーン樹脂、フェノ
ール樹脂等公知の熱硬化性樹脂を適用することができ
る。より好ましくは、エポキシ樹脂、シアネート樹脂で
ある。エポキシ樹脂は二官能以上のエポキシ基を有する
エポキシ樹が好ましい。ただし半導体素子の封止目的の
ため不純物、特にイオン性不純物が少ないものが好まし
い。The liquid sealing resin composition of the present invention is preferably a thermosetting resin, and more preferably a liquid resin at normal temperature. For example, a known thermosetting resin such as an epoxy resin, a cyanate resin, a urethane resin, a polybutadiene resin, a silicone resin, and a phenol resin can be used. More preferred are an epoxy resin and a cyanate resin. The epoxy resin is preferably an epoxy resin having a bifunctional or higher epoxy group. However, for the purpose of encapsulating a semiconductor element, a material having a small amount of impurities, particularly ionic impurities, is preferable.
【００１４】硬化剤は、上記の樹脂に対する公知の硬化
剤を用いることができる。更に、特性を向上させるため
にフィラーを添加することが出来る。その例としては、
シリカ、炭酸カルシウム、アルミナ、窒化アルミ等が挙
げられる。また、熱硬化性樹脂が固形の場合、予め溶剤
に溶かして使用することも出来る。更に、硬化促進剤、
低応力剤等を添加することが出来る。As the curing agent, a known curing agent for the above resin can be used. Further, a filler can be added to improve properties. For example,
Examples include silica, calcium carbonate, alumina, and aluminum nitride. When the thermosetting resin is solid, it can be used by dissolving it in a solvent in advance. Further, a curing accelerator,
A low stress agent or the like can be added.
【００１５】本発明において、液状封止樹脂組成物はフ
ラックス作用を有し、フラックス作用とは共晶半田の表
面の酸化膜を還元除去し、基板と接合できるようにする
作用のことをいう。その例としては、有機カルボン酸類
（ポリマー、モノマー含む）、ハイドロキノン、ナフト
キノンのような還元作用を示す物質または該構造を有す
る化合物をあげることができる。これらのフラックス作
用を有する物質は、単独に添加されてもよいが、主剤、
硬化剤等の樹脂の骨格に組み込まれた化合物でも良い。
フラックス特性を有するフェノール性硬化材として、１
分子あたり少なくとも２個以上のフェノール性水酸基と
１分子当たり少なくとも１個以上の芳香族カルボン酸を
有する化合物を用いることができ、例えば、２，５-ヒ
ドロキシ安息香酸等がある。In the present invention, the liquid sealing resin composition has a flux action, and the flux action refers to an action of reducing and removing an oxide film on the surface of the eutectic solder so that it can be bonded to a substrate. Examples thereof include substances having a reducing action such as organic carboxylic acids (including polymers and monomers), hydroquinone, and naphthoquinone, or compounds having the structure. These substances having a flux action may be added alone, but the main agent,
A compound incorporated in the skeleton of the resin such as a curing agent may be used.
As a phenolic curing agent having flux properties, 1
A compound having at least two or more phenolic hydroxyl groups per molecule and at least one or more aromatic carboxylic acid per molecule can be used, and examples thereof include 2,5-hydroxybenzoic acid.
【００１６】本発明の液状封止樹脂組成物の製造方法
は、各材料を秤量した後公知の方法で混練し、真空脱泡
して液状封止樹脂組成物を得ることができる。また、半
導体装置の製造方法は公知の方法を用いることができ
る。In the method for producing the liquid sealing resin composition of the present invention, the respective materials are weighed, kneaded by a known method, and degassed in a vacuum to obtain a liquid sealing resin composition. In addition, a known method can be used as a method for manufacturing the semiconductor device.
【００１７】[0017]
【実施例】＜実施例１−２、比較例１−２＞表１の処方
に従って秤量し、ミキサーにて混練し、真空脱泡後、液
状封止樹脂組成物を作製した。次に特性を把握するため
以下の代用特性を評価した。<Example 1-2, Comparative Example 1-2> Weighed according to the prescription in Table 1, kneaded with a mixer, degassed in a vacuum, and prepared a liquid sealing resin composition. Next, the following substitute characteristics were evaluated in order to grasp the characteristics.
【００１８】＜評価方法＞ （１）常態粘度：２５℃において東機産業（株）製Ｅ型
粘度計で初期粘度（コーン回転数２．５ｒｐｍ）及びそ
の時の２５℃におけるコーン回転数の比、０．５ｒｐｍ
/２．５ｒｐｍという比をチキソ比とした。 （２）半田濡れ性：液状封止樹脂組成物のフラックス活
性を判断する目安として、厚さ２５０μｍのベア銅フレ
ームに作製した液状封止樹脂組成物を滴下し、その上に
直径０．８５ｍｍの共晶半田ボールを静置した。それを
２００℃に加熱したホットプレート上に静置し、半田ボ
ールのつぶれ方を観測した。そのサンプルよりつぶれた
半田高さと広がり幅の比をアスペクト比として計算し
た。 （３）ゲルタイム：作製した液状封止樹脂組成物を１７
０℃ホットプレート上でタックフリーになる状態までの
時間をゲルタイムとして測定した。 （４）動的粘弾性測定：作製した液状封止樹脂組成物を
レオメトリック社製アレス動的粘弾性測定装置を用い
て、３０℃から２５０℃まで昇温速度２５℃/ｍｉｎで
上昇させたときの粘度挙動を測定した。そのときの振動
数は５０ｒａｄ/ｓｅｃ、歪みを３０％と一定とした。 （５）半田バンプ接合率：日鉄マイクロメタル社製のバ
ンプ付きチップ、また対となる厚み０．７５ｍｍの基板
を用いて基板上に液状封止樹脂組成物を塗布し、澁谷工
業社製フリップチップボンダーを用いて仮圧着させた。
そのサンプルをピーク温度２３０℃、１８３℃以上の時
間が６０ｓｅｃ、トータル時間が３００ｓｅｃのプロフ
ァイルを有するリフローに通してバンプの接合性をテス
ターにより観察した。<Evaluation method> (1) Normal viscosity: Initial viscosity (cone rotation speed: 2.5 rpm) using an E-type viscometer manufactured by Toki Sangyo Co., Ltd. at 25 ° C. and the ratio of cone rotation speed at 25 ° C. 0.5 rpm
The ratio of /2.5 rpm was determined as the thixo ratio. (2) Solder wettability: As a guide for judging the flux activity of the liquid sealing resin composition, the liquid sealing resin composition prepared above was dropped on a bare copper frame having a thickness of 250 μm, and a 0.85 mm diameter was formed thereon. The eutectic solder ball was left still. It was allowed to stand on a hot plate heated to 200 ° C., and how the solder balls were crushed was observed. The ratio of the height of the solder crushed from the sample to the spread width was calculated as an aspect ratio. (3) Gel time: The prepared liquid sealing resin composition was mixed with 17
The time until a tack-free state on a 0 ° C. hot plate was measured as a gel time. (4) Dynamic viscoelasticity measurement: The prepared liquid sealing resin composition was heated from 30 ° C. to 250 ° C. at a temperature increasing rate of 25 ° C./min using an Ares dynamic viscoelasticity measuring device manufactured by Rheometrics. The viscosity behavior at that time was measured. At that time, the frequency was fixed at 50 rad / sec, and the strain was fixed at 30%. (5) Solder bump bonding ratio: A liquid sealing resin composition is applied on a substrate using a bumped chip manufactured by Nippon Steel Micro Metal Co., Ltd., and a paired substrate having a thickness of 0.75 mm. Temporary pressure bonding was performed using a chip bonder.
The sample was passed through a reflow having a profile of a peak temperature of 230 ° C., a time of 183 ° C. or more for 60 sec, and a total time of 300 sec, and the bump bonding property was observed with a tester.
【００１９】実施例に用いた原材料の内容は下記のとお
りである。 ・ビスフェノールＦ型エポキシ樹脂：粘度；２０００ｍ
Ｐａ・ｓ（２５℃） ・フェノール系硬化材：２，５−ヒドロキシ安息香酸The contents of the raw materials used in the examples are as follows.・ Bisphenol F type epoxy resin: viscosity: 2000m
Pa · s (25 ° C) ・ Phenolic curing agent: 2,5-hydroxybenzoic acid
【００２０】上記の測定結果を表１に示す。Table 1 shows the measurement results.
【表１】 [Table 1]
【００２１】[0021]
【表２】 [Table 2]
【００２２】表１及び表２に示したように、実施例１及
び２では半田溶融温度でも十分低粘度を維持しており、
半田バンプ接合率も１００％と高い値を示している。こ
れは、半田バンプが完全に溶解し、接合するまで樹脂粘
度が低く、バンプ自体の濡れを妨げないためである。こ
れは低粘度さえ維持できればフィラー添加系でも十分接
合が可能であることを意味する。一方、比較例１では、
材料粘度が高いためバンプの接合を抑制していることが
バンプ接合率からも示唆される。加えて、硬化を早めた
比較例２においても、半田溶融時に高粘度化（ゲル化）
しており、バンプ接合率は低い。これはバンプが溶融し
接合する前に樹脂材料が硬化してしまい、バンプ接合を
妨げていることを意味している。As shown in Tables 1 and 2, Examples 1 and 2 maintain a sufficiently low viscosity even at the solder melting temperature.
The solder bump bonding ratio also shows a high value of 100%. This is because the solder bumps are completely melted, the resin viscosity is low until the solder bumps are joined, and the bumps themselves are not prevented from wetting. This means that even if a low viscosity can be maintained, sufficient bonding is possible even with a filler-added system. On the other hand, in Comparative Example 1,
It is suggested from the bump joining ratio that the joining of the bumps is suppressed due to the high material viscosity. In addition, in Comparative Example 2 in which curing is accelerated, the viscosity is increased (gelation) when the solder is melted.
And the bump bonding rate is low. This means that the resin material is cured before the bumps are melted and joined, thereby hindering the bump joining.
【００２３】[0023]
【発明の効果】本発明の液状封止樹脂組成物を用いるこ
とにより、ノンフローアンダーフィルや圧接工法などの
パッケージングにおいて、非常に高い半田バンプ接合率
を得ることができ、その工業的メリットは大きい。By using the liquid encapsulating resin composition of the present invention, a very high solder bump bonding ratio can be obtained in packaging such as non-flow underfill or pressure welding method. large.
Claims (5)
を同時に行うことができる液状封止樹脂組成物におい
て、定率で室温から温度を上げたときの該液状封止樹脂
組成物の動的粘弾性測定における粘度挙動が、１７０℃
で１Ｐａ・ｓ以下であることを特徴とする液状封止樹脂
組成物。1. A method for measuring dynamic viscoelasticity of a liquid sealing resin composition which can simultaneously perform bonding and sealing of a flip chip package when the temperature is increased from room temperature at a constant rate. At 170 ° C.
Liquid sealing resin composition characterized by being 1 Pa · s or less.
おける測定条件が、昇温速度５〜４０℃/ｍｉｎ 、歪み
値１〜５０％、振動数１〜１００ｒａｄ/ｓｅｃである
請求項１記載の液状封止樹脂組成物。2. The measurement conditions in the dynamic viscoelasticity measurement of the liquid sealing resin composition are a temperature rising rate of 5 to 40 ° C./min, a strain value of 1 to 50%, and a frequency of 1 to 100 rad / sec. 2. The liquid sealing resin composition according to 1.
ポキシ基を有するエポキシ樹脂、硬化剤である請求項１
記載の液状封止樹脂組成物。3. The liquid sealing resin composition is an epoxy resin having a bifunctional or higher epoxy group, and a curing agent.
The liquid sealing resin composition according to the above.
を有する請求項１記載の液状封止樹脂組成物。4. The liquid sealing resin composition according to claim 1, wherein the liquid sealing resin composition has a flux property.
止樹脂組成物を用いて封止された半導体装置。5. A semiconductor device sealed with the liquid sealing resin composition according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001053293A JP2002261202A (en) | 2001-02-28 | 2001-02-28 | Liquid-sealing resin composition and semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001053293A JP2002261202A (en) | 2001-02-28 | 2001-02-28 | Liquid-sealing resin composition and semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002261202A true JP2002261202A (en) | 2002-09-13 |
Family
ID=18913774
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001053293A Pending JP2002261202A (en) | 2001-02-28 | 2001-02-28 | Liquid-sealing resin composition and semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002261202A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012089750A (en) * | 2010-10-21 | 2012-05-10 | Hitachi Chem Co Ltd | Thermosetting resin composition for sealing and filling semiconductor, and semiconductor device |
| JP2012124271A (en) * | 2010-12-07 | 2012-06-28 | Sekisui Chem Co Ltd | Flip-chip resin sealing material and method of manufacturing semiconductor packaging body |
| JP2019056041A (en) * | 2017-09-20 | 2019-04-11 | 旭化成株式会社 | Thermosetting resin composition |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000239489A (en) * | 1999-02-22 | 2000-09-05 | Nippon Kayaku Co Ltd | Liquid epoxy resin composition for sealing material and cured product thereof |
-
2001
- 2001-02-28 JP JP2001053293A patent/JP2002261202A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000239489A (en) * | 1999-02-22 | 2000-09-05 | Nippon Kayaku Co Ltd | Liquid epoxy resin composition for sealing material and cured product thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012089750A (en) * | 2010-10-21 | 2012-05-10 | Hitachi Chem Co Ltd | Thermosetting resin composition for sealing and filling semiconductor, and semiconductor device |
| US9431314B2 (en) | 2010-10-21 | 2016-08-30 | Hitachi Chemical Company, Ltd | Thermosetting resin composition for sealing packing of semiconductor, and semiconductor device |
| JP2012124271A (en) * | 2010-12-07 | 2012-06-28 | Sekisui Chem Co Ltd | Flip-chip resin sealing material and method of manufacturing semiconductor packaging body |
| JP2019056041A (en) * | 2017-09-20 | 2019-04-11 | 旭化成株式会社 | Thermosetting resin composition |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4299140B2 (en) | Double cure B-stageable underfill for wafer level | |
| EP1818351B1 (en) | Underfill encapsulant for wafer packaging and method for its application | |
| JP5387874B2 (en) | Manufacturing method of semiconductor device using liquid sealing resin composition | |
| US7056978B2 (en) | Toughened epoxy-anhydride no-flow underfill encapsulant | |
| JP4481651B2 (en) | Non-flow underfill composition | |
| JP2009144169A (en) | No-flow underfill encapsulant | |
| JP4887850B2 (en) | Liquid resin composition for underfill, semiconductor device manufacturing method using the same, and semiconductor device | |
| KR20170113430A (en) | Semiconductor device and preparation method of the same | |
| JP2005516090A5 (en) | ||
| JP4206631B2 (en) | Thermosetting liquid sealing resin composition, method for assembling semiconductor element, and semiconductor device | |
| JP3947296B2 (en) | Sheet-like sealing material and method of manufacturing semiconductor device using the same | |
| KR20150081436A (en) | Underfill composition and semiconductor device and manufacturing method thereof | |
| JP3446730B2 (en) | Epoxy resin composition and semiconductor device | |
| JP6179247B2 (en) | Electronic component device manufacturing method and electronic component device | |
| JP3958102B2 (en) | Liquid encapsulating resin composition, semiconductor device manufacturing method, and semiconductor device | |
| JP3732148B2 (en) | Semiconductor device manufacturing method and semiconductor device | |
| JP3779091B2 (en) | Resin composition for sealing | |
| JP2002261202A (en) | Liquid-sealing resin composition and semiconductor device | |
| JP2003105054A (en) | Liquid sealing resin composition and semiconductor device | |
| JP2005206664A (en) | Semiconductor sealing resin composition | |
| JP4729873B2 (en) | Assembling method of semiconductor element | |
| Zhang et al. | Development of environmentally friendly nonanhydride no-flow underfills | |
| JP4112306B2 (en) | Liquid encapsulating resin composition, semiconductor device using the same, and method for manufacturing semiconductor device | |
| TWI627226B (en) | Dual-side reinforcement flux for encapsulation | |
| JP2004303875A (en) | Liquefied sealing-resin composition, its designing method, semiconductor device and manufacturing method therefor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20040315 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20040416 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20050712 |