JP2005206664A - Semiconductor sealing resin composition - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor sealing resin composition which is suitably used in flip chip packaging, can obtain excellent solder joining and workability, and brings about excellent electrical connection reliability after resin sealing, and a semiconductor device resin sealed with the use of the composition. <P>SOLUTION: The semiconductor sealing resin composition has a viscosity measured at 80°C of ≤5,000 Pa s and comprises (A) an epoxy resin having at least two epoxy groups in the molecule, (B) a curing agent, and (C) silica particles having an average particle diameter dmax of 3-50 nm and a half width of ≤1.5 times the average particle diameter dmax. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a semiconductor sealing resin composition (hereinafter sometimes simply referred to as a resin composition) for sealing a gap between a printed circuit board and a semiconductor element in a semiconductor device, and the semiconductor sealing resin The present invention relates to a semiconductor device sealed with a composition.

  As a recent demand for higher performance, lighter, thinner, and smaller semiconductor devices, flip chip mounting has been performed in which semiconductor elements are mounted on a printed circuit board with a face-down structure. Generally, in flip chip mounting, a gap between a semiconductor element and a printed circuit board is sealed with a thermosetting resin composition in order to protect the semiconductor element.

  In the flip-chip mounting method, since the semiconductor element and the printed circuit board having different linear expansion coefficients are directly electrically connected, the reliability of the connection portion is a problem.

  As a countermeasure, fill the gap between the semiconductor element and the printed circuit board with a liquid resin material and cure it to form a cured resin body, and then disperse the stress concentrated on the electrical connection part to the cured resin body. A method for improving reliability is employed. In the conventional method of filling a liquid material in a flip chip method using solder bumps, a semiconductor element is first mounted on a printed circuit board, a metal bond is formed by a solder melting process, and then a capillary phenomenon is formed in the gap between the semiconductor element and the printed circuit board. The liquid resin material is injected by (see, for example, Patent Document 1).

Furthermore, in recent years, it has been proposed to manufacture the semiconductor device using a thermosetting resin composition having solderability, which has attempted to simplify the process more than the liquid material injection method utilizing capillary action ( For example, see Patent Document 2). In the manufacture of a semiconductor device using this thermosetting resin composition having solder bonding properties, the thermosetting resin composition is pre-applied on a semiconductor element or a printed circuit board and sealed with an interface resin together with chip mounting. Then, since the metal bond is formed by performing solder reflow, the process of applying the flux, cleaning it, and injecting the liquid resin can be reduced compared to the manufacture of the semiconductor device using the liquid resin material. Can be improved.
JP 2001-279058 A JP 2000-120360 A

  However, in the above manufacturing method, since the thermosetting resin composition is pre-applied on a semiconductor element or a printed circuit board and then soldered, the inorganic composition such as silica is contained in the thermosetting resin composition. In such a case, the inorganic filler becomes a steric hindrance on the solder joint surface, so that sufficient solder joint property cannot be obtained. Also, in order not to hinder solder bonding, simply adding an inorganic filler having a small particle size to the resin composition causes the bulk density of the inorganic filler to be too high, so the compatibility with the resin composition is poor. The viscosity becomes high, and there arises a problem that it cannot be supplied onto the wafer.

  Further, in the case where silica is not contained in the thermosetting resin composition in order to obtain sufficient solder bonding properties, the thermal expansion coefficient of the resin composition increases, and due to the thermal expansion and contraction difference between the semiconductor element and the sealing resin layer. Various loads such as generated stress are applied to the connection electrode. There is a problem that the connection electrode is broken due to repeated strain caused by such a load and the connection electrode portion is disconnected.

  Accordingly, the present invention provides a resin composition for encapsulating a semiconductor, which is preferably used for flip chip mounting, provides excellent solderability and workability, and provides excellent electrical connection reliability after resin encapsulation, and It is an object of the present invention to provide a semiconductor device sealed with a resin using the composition.

That is, the present invention
(1) The viscosity measured at 80 ° C. is 5000 Pa · s or less,
(A) an epoxy resin having two or more epoxy groups in one molecule;
(B) a curing agent, and (C) a resin composition for encapsulating a semiconductor, comprising silica particles having an average particle diameter dmax of 3 to 50 nm and a half width of 1.5 times or less of the average particle diameter dmax,
(2) The resin composition for semiconductor encapsulation according to (1), wherein the silica particles are dispersed in the epoxy resin,
(3) The thermal expansion coefficient measured at the Tg temperature of the cured product of the resin composition for semiconductor encapsulation is 70 × 10 ⁻⁶ / K or less, according to (1) or (2) above The present invention relates to a semiconductor sealing resin composition, and (4) a semiconductor device sealed with the semiconductor sealing resin composition according to any one of (1) to (3).

  ADVANTAGE OF THE INVENTION According to this invention, the resin composition for semiconductor sealing excellent in solder bondability and workability | operativity is provided. Furthermore, by using the composition, a semiconductor device having excellent connection reliability can be efficiently produced.

The resin composition for semiconductor encapsulation of the present invention has a viscosity measured at 80 ° C. of 5000 Pa · s or less,
(A) an epoxy resin having two or more epoxy groups in one molecule;
One major feature is that it contains (B) a curing agent, and (C) silica particles having an average particle diameter dmax of 3 to 50 nm and a half width of 1.5 times or less of the average particle diameter dmax.

  Usually, a resin composition used as a sealing resin in a semiconductor device has an inorganic coefficient such as silica particles for the purpose of lowering its thermal expansion coefficient or water absorption rate and satisfying the thermal stress reliability and solder resistance of the semiconductor device. Filler is added. However, as described above, there is a problem that sufficient solderability cannot be obtained.

  On the other hand, since the resin composition of the present invention contains silica particles having a specific particle size, when sealing the gap between the printed circuit board and the semiconductor element, the steric hindrance on the solder joint surface Can be avoided, and the effect that the stress applied to the connection electrode can be reduced is exhibited. Furthermore, the semiconductor device formed by sealing using the resin composition of the present invention has excellent characteristics of exhibiting excellent connection reliability.

  In addition, in this specification, what heat-cured the resin composition of this invention is called hardened | cured material.

  The epoxy resin having two or more epoxy groups in one molecule contained in the resin composition of the present invention is not particularly limited as long as it is liquid at least at 50 ° C. or less. For example, a bisphenol A type epoxy resin, Examples thereof include bisphenol F-type epoxy resins, naphthalene-type epoxy resins, and alicyclic epoxy resins. From the viewpoint of securing fluidity at the time of melting, bisphenol A-type epoxy resins and bisphenol F-type epoxy resins are preferably used. These may be used alone or in combination of two or more.

  The epoxy equivalent of the epoxy resin is preferably 90 to 1000 g / eq, more preferably 100 to 500 g / eq. When the epoxy equivalent is 90 g / eq or more, the cured product is hardly brittle, and when it is 1000 g / eq or less, the glass transition temperature (Tg) of the cured product is not too low, which is preferable. The content of the epoxy resin in the resin composition is preferably 5 to 90% by weight, more preferably 10 to 80% by weight from the viewpoints of heat resistance and moisture resistance.

  The curing agent contained in the resin composition of the present invention is not particularly limited as long as it acts as a curing agent for the epoxy resin, and various curing agents are used. A phenolic curing agent is generally used in terms of excellent moisture resistance reliability, but various acid anhydride curing agents, aromatic amines, dicyandiamide, hydrazide, benzoxazine ring compounds, and the like can also be used. These may be used alone or in combination of two or more.

  Examples of the phenol-based curing agent include cresol novolak resin, phenol novolak resin, dicyclopentadiene ring type phenol resin, phenol aralkyl resin, naphthol, silicon-modified phenol novolak resin, and the like. These may be used alone or in combination of two or more.

  When the phenolic curing agent is used as the curing agent, the blending ratio of the epoxy resin and the curing agent is based on the epoxy equivalent of 1 g / eq in the epoxy resin from the viewpoint of securing curability, heat resistance, and moisture resistance reliability. Usually, the reactive hydroxyl group equivalent in the phenolic curing agent is preferably 0.5 to 1.5 g / eq, more preferably 0.7 to 1.2 g / eq. In addition, also when using hardening | curing agents other than a phenol type hardening | curing agent, the mixture ratio should just follow the mixing | blending ratio (equivalent ratio) in the case of using a phenol type hardening | curing agent.

  The average particle diameter dmax of the silica particles contained in the resin composition of the present invention is 3 to 50 nm, and preferably 8 to 30 nm from the viewpoint of securing solderability and transparency. Further, the full width at half maximum is 1.5 times or less of the average particle diameter dmax. Further, silica particles with high sphericity are preferable.

  Here, the average particle diameter dmax refers to the diameter of a particle having the maximum capacity in a particle size distribution curve in which the volume ratio of the particle is plotted against the particle diameter when measured by the small-angle neutron scattering method. The half-value width refers to the width of the distribution curve located at half the height of the peak dmax of the particle size distribution curve. A small half-value width means that the particle size distribution is sharp. By using silica particles having such characteristics in the resin composition of the present invention, a low viscosity resin composition can be obtained even with a relatively high addition amount.

  The content of the silica particles in the resin composition is preferably 10 to 65% by weight, more preferably 20 to 60% by weight, from the viewpoint of securing fluidity and improving connection reliability.

  In addition, the resin composition of the present invention may contain the following other components as desired.

  For example, a curing accelerator can be added to the resin composition of the present invention as desired. The curing accelerator is not particularly limited as long as it acts as a curing accelerator for the epoxy resin, and various curing agents are used. For example, amine-based, phosphorus-based, boron-based, phosphorus-boron-based, etc. A curing accelerator is used. Further, a microcapsule type curing accelerator (for example, see Japanese Patent Application Laid-Open No. 2000-309682) made by encapsulating the curing accelerator in a microcapsule is more preferably used. These may be used alone or in combination of two or more. What is necessary is just to set content of a hardening accelerator suitably in the ratio which a desired hardening rate is obtained and does not reduce solderability and adhesiveness. As a setting method, for example, the gelation time (an index of the curing rate) of the resin composition containing various amounts of the curing accelerator on the hot plate is measured, and the amount of the desired gelation time is obtained. The method of making it the content is mentioned. In general, the amount is preferably 0.01 to 20 parts by weight, more preferably 0.05 to 10 parts by weight with respect to 100 parts by weight of the curing agent.

  Furthermore, a solder bonding aid can be added to the resin composition of the present invention as desired. The soldering aid is not particularly limited as long as it is conventionally used. Acetic acid, adipic acid, maleic acid, fumaric acid, itaconic acid, phthalic acid, trimellitic acid, pyromellitic acid, acrylic acid, Organic carboxylic acids such as isocyanuric acid and carboxyl group-containing acrylonitrile butadiene rubber are used. As the solder bonding aid, an ester bond of the organic carboxylic acid and the vinyl ether compound is used from the viewpoint of improving solder connectivity and compatibility with the epoxy resin. Examples of the vinyl ether compound include vinyl ethers having a butyl group, an ethyl group, a propyl group, an isopropyl group, a cyclohexyl group, and the like. By using such an ester bond as a solder bonding aid, after exhibiting a soldering function during the semiconductor mounting process, it can react with an epoxy resin, so that the material combines the properties of a solder bonding aid and a curing agent. Is preferably used.

  The content of the solder bonding aid in the resin composition is preferably 0.1 to 20% by weight, more preferably 0.3 to 10% by weight, and still more preferably, from the viewpoint of securing solder bonding properties and cured body strength. Is 0.5 to 5% by weight.

  Furthermore, the resin composition of the present invention includes a coupling agent such as silane or titanium, a flexibility imparting agent such as a synthetic rubber, a silicon compound, or the like; Etc. can be added.

  The resin composition of the present invention can be prepared, for example, as follows. That is, first, from the viewpoint of uniformity of dispersion and suppression of increase in viscosity, a predetermined amount of silica particles is dispersed in a predetermined amount of epoxy resin, and then dried under reduced pressure to obtain a mixture of epoxy resin and silica particles (in this specification, , Sometimes referred to as silica-dispersed epoxy resin). At this time, in order to completely dehydrate, water and a solvent that forms an azeotropic compound may be mixed. Examples of such solvents include methanol, ethanol, acetone, methyl ethyl ketone, ethyl acetate and the like. The dispersion means a state in which a gel-like material derived from aggregation of solid particles is not substantially present in the medium.

  Examples of such silica-dispersed epoxy resins include NANOPOX XP22 / 0543 and NANOPOX XP22 / 0540 manufactured by Hanse.

  A predetermined amount of the silica-dispersed epoxy resin and the curing agent obtained as described above are mixed, and if necessary, other components are appropriately added, and the mixture is kneaded in a heated state with a kneader such as a universal stirring kettle and melt mixed. . Next, this is filtered using a filter, and then degassed under reduced pressure, whereby a desired resin composition can be prepared.

  In preparing the resin composition, an organic solvent may be added in order to adjust the fluidity of the composition. Examples of the organic solvent include toluene, xylene, methyl ethyl ketone (MEK), acetone, diacetone alcohol, and the like. These may be used alone or in combination of two or more.

  The viscosity measured at 80 ° C. of the resin composition of the present invention prepared as described above is 5000 Pa · s or less, and preferably 0.1 to 0.1 from the viewpoint of ensuring solderability and application workability. 3000 Pa · s, more preferably 1 to 1000 Pa · s.

  The resin composition has a viscosity of 1 g of the resin composition using an E-type viscometer (manufactured by HAAKE: RS-1) with a plate diameter of 35 mm, a gap of 100 μm, and a rotation speed of 10 (1 / S) and measure at 80 ° C.

Furthermore, the thermal expansion coefficient measured at the glass transition temperature (Tg) of the cured product of the resin composition of the present invention prepared as described above is preferably 70 × from the viewpoint of securing the bonding reliability. It is 10 ⁻⁶ / K or less, more preferably 60 × 10 ⁻⁶ / K or less.

  The thermal expansion coefficient of the resin composition was determined by curing the resin composition at 170 ° C. for 2 hours by mold casting to produce a 5 mmφ × 20 mm test piece, and using a MJ800GM manufactured by Rigaku Corporation at 5 ° C. The coefficient of thermal expansion at the temperature of Tg is measured at a temperature increase rate of / min.

  As shown in FIG. 1, the semiconductor device sealed with the resin composition of the present invention has a structure in which a semiconductor element 3 is mounted on one side of a printed circuit board 1 via a plurality of connection electrodes 2. . Further, a sealing resin layer 4 is formed between the printed circuit board 1 and the semiconductor element 3.

  The material of the printed circuit board 1 is not particularly limited, but is roughly divided into a ceramic substrate and a plastic substrate. Examples of the plastic substrate include an epoxy substrate such as a glass epoxy substrate, a bismaleimide triazine substrate, and a polyimide substrate. Can be mentioned.

  The plurality of connection electrodes 2 that electrically connect the printed circuit board 1 and the semiconductor element 3 may be arranged on the surface of the wired circuit board 1 in advance, or arranged on the surface of the semiconductor element 3. May be. Furthermore, it may be previously arranged on both the surface of the printed circuit board 1 and the surface of the semiconductor element 3.

  The material of the plurality of connection electrodes 2 is not particularly limited, and examples thereof include low melting point and high melting point solder, tin, silver-tin, and the electrodes on the printed circuit board are made of the above materials. For such things, it may be gold, copper or the like.

  The semiconductor element 3 is not specifically limited, What is normally used can be used. For example, various semiconductors such as elemental semiconductors such as silicon and germanium, and compound semiconductors such as gallium arsenide and indium phosphide are used. The size of the semiconductor element 3 is normally set to 2 to 20 mm in width, 2 to 20 mm in length, and 0.1 to 0.6 mm in thickness. Further, the size of the printed circuit board 1 on which the wiring circuit for mounting the semiconductor element 3 is formed is usually 10 to 70 mm wide, 10 to 70 mm long, and 0.05 to 0.05 mm thick according to the size of the semiconductor element 3. The range is set to 3.0 mm. In the case of a map-type substrate (one on which many semiconductor elements are mounted on one wired circuit board), both the width and length can be set to 40 mm or more. And the distance between the semiconductor element 3 and the wiring circuit board 1 with which the melt | dissolved resin composition is filled is 5-100 micrometers normally.

  In the semiconductor device formed by sealing using the resin composition of the present invention, as described above, the sealing resin layer is formed by interposing the resin composition between the printed circuit board and the semiconductor element. It is manufactured by. Here, application | coating of a resin composition may be performed on a wiring circuit board, and may be performed on a semiconductor element. When the resin composition is applied to the semiconductor element side, the resin composition may be applied to a wafer before dicing into individual chips, or may be applied to individual chips after being diced. The method of applying a resin composition to a wafer and then dicing into individual chips and then mounting the chip is preferable from the viewpoint of improving productivity because the resin can be applied collectively at the wafer level. As a resin coating method, either a printing method or a spin coating method may be used, but a printing sealing method using a vacuum differential pressure in the printing method is more preferable because air bubbles hardly enter the resin sealing layer. An example of an embodiment of a method for manufacturing a semiconductor device of the present invention will be described in order with reference to the drawings.

  In the embodiment in which the resin composition is applied to the printed circuit board, first, as shown in FIG. 2, the molten resin composition 5 of the present invention heated to, for example, 60 ° C. is potted on the wired circuit board 1. Next, as shown in FIG. 3, a semiconductor element 3 provided with a plurality of spherical connection electrodes (joint balls) 2 is placed at a predetermined position on the resin composition, and the resin composition 5 is placed on the heating stage. Further, in the molten state, the connection electrode 2 of the semiconductor element 3 pushes away the molten resin composition 5 so that the wiring circuit board 1 and the connection electrode 2 come into contact with each other, and the semiconductor element 3 and the wiring circuit board 1 After filling the gap between the resin composition in a molten state, metal bonding by solder reflow is performed, and then the resin composition is cured to form the sealing resin layer 4 to seal the gap. . The curing temperature of the resin composition is usually preferably 130 to 200 ° C. At this time, the solder reflow method may be a bonding method using a reflow furnace, or may be a bonding method in which the heater part is heated to a temperature equal to or higher than the solder melting point and solder melting is performed simultaneously with chip mounting. In this way, the semiconductor device shown in FIG. 1 is manufactured.

  The method for manufacturing the semiconductor device has been described with respect to the case where the semiconductor element 3 provided with a plurality of spherical connection electrodes (joint balls) 2 is used. However, the present invention is not limited to this. A plurality of spherical connection electrodes 2 may be used.

  The thickness and weight of the resin composition 5 fill the size of the semiconductor element 3 to be mounted and the size of the connection electrode provided on the semiconductor element 3, that is, the gap between the semiconductor element 3 and the printed circuit board 1. It is set appropriately depending on the volume occupied by the sealing resin layer 4 formed by sealing.

  In the method for manufacturing a semiconductor device, the heating temperature when the resin composition 5 is heated and melted to obtain a molten state includes the heat resistance of the semiconductor element 3 and the printed circuit board 1, the melting point of the connection electrode 2, and the resin composition. 5 is appropriately set in consideration of the softening point, heat resistance, and the like.

  EXAMPLES Hereinafter, although an Example is given and this invention is demonstrated further, this invention is not limited at all by this Example.

  The raw materials used in the examples and comparative examples are summarized below.

(1) Epoxy resin As an epoxy resin,
(A) Bisphenol A type epoxy resin (epoxy equivalent: 185 g / eq) or (b) Bisphenol F type epoxy resin (epoxy equivalent: 158 g / eq)
Was used.

(2) Curing agent As a curing agent, xylylene type phenol resin (hydroxyl equivalent: 174 g / eq)
Was used.

(3) Curing accelerator Microencapsulated triphenylphosphine (shell: polyurea, core / shell ratio = 20/80 wt%) was used as a curing accelerator.

(4) Solder joining aid A carboxy-modified acrylonitrile butadiene copolymer (Mooney viscosity: 45 ML (1 + 4), acrylonitrile content: 27 wt%, carboxyl group content: 0.027 ephr) was used as a solder joining aid.

(6) Silica-dispersed epoxy resin As silica-dispersed epoxy resin,
(A) Silica-dispersed epoxy resin (epoxy resin: bisphenol A type epoxy resin; silica particle diameter: average particle diameter dmax = 15 nm, maximum particle diameter = 40 nm, half-value width = 10 nm; silica concentration = 50% by weight; epoxy equivalent = 380 g / Eq; manufactured by Hanse: NANOPOX XP22 / 0543), or (b) silica-dispersed epoxy resin (epoxy resin: bisphenol F type epoxy resin; silica particle size: average particle size dmax = 15 nm, maximum particle size = 40 nm, half width) = 10 nm; silica concentration = 60 wt%; epoxy equivalent = 425 g / eq; manufactured by Hanse: NANOPOX XP22 / 0540)
Was used.

(7) Silica particles As silica particles,
(A) Silica dispersion solution (average particle size dmax = 12 nm, maximum particle size = 40 nm, half width = 20 nm, solvent: methyl ethyl ketone, silica content: 12% by weight, manufactured by Fuso Chemical Industries, Ltd .: PL-1), or (b ) Silica dispersion solution (silica particles (average particle size dmax = 300 nm, maximum particle size = 350 nm, half width = 50 nm, manufactured by Nippon Shokubai Co., Ltd .: KE-S30) manufactured by Asada Tekko Co., Ltd .: beads mill (bead material = zirconia, particle size) = 1 mm) and dispersed in methyl ethyl ketone solvent for 60 minutes at 3000 rpm, silica content: 50% by weight)
Was used.

  Below, the evaluation method in an Example and a comparative example is shown collectively.

(1) Viscosity Using 1 g of resin composition, an E-type viscometer (manufactured by HAAKE: RS-1) having a plate diameter of 35 mm, a gap of 100 μm, and a rotational speed of 10 (1 / s), Measured at 80 ° C. In addition, since the measurement limit of the E-type viscometer is 10,000 Pa · s, those having a viscosity equal to or higher than the measurement limit cannot be measured.

(2) Coefficient of thermal expansion The resin composition was cured at 170 ° C. for 2 hours by mold casting to prepare a 5 mmφ × 20 mm test piece, and a temperature increase rate of 5 ° C./min using MJ800GM manufactured by Rigaku Corporation. Then, the coefficient of thermal expansion below Tg was measured.

(3) Initial energization test The electrical resistance value of the semiconductor device was measured with a daisy chain (manufactured by ADVANTEST: digital multimeter TR6847), and those without a resistance value display were counted as defective products.

(4) Thermal shock test After maintaining the semiconductor device at −55 ° C. for 5 minutes, the operation of maintaining the semiconductor device at 125 ° C. for 5 minutes was performed 500 times (TST 500 cycles) and 1000 times (TST 1000 cycles), and then daisy chain (manufactured by ADVANTEST) : The electrical resistance value of the semiconductor device was measured with a digital multimeter TR6847), and the electrical resistance value was compared with the initial value (the electrical resistance value of the semiconductor device before the operation). Semiconductors whose electrical resistance value was twice or more the initial value were counted as defective products.

Examples 1-4 and Comparative Examples 1-4
The resin compositions of Examples 1 to 4 and Comparative Examples 1 to 4 were produced as follows.

  Each raw material shown in Table 1 and Table 2 was mixed at a ratio shown in the same table at 1000 rpm for 30 minutes at 1000 rpm using a homodisper (manufactured by Tokushu Kika Kogyo Co., Ltd .: TK Robotics Type B). The resulting mixture was then filtered at room temperature using a 400 mesh filter. Thereafter, in order to remove the solvent and bubbles in the filtrate, a resin composition was prepared by concentration under reduced pressure at 0.0026 MPa at 90 ° C. for 60 minutes, and the physical properties thereof were measured. The values are shown in Table 2.

Using the resin composition produced as described above, a semiconductor device (corresponding to the semiconductor device shown in FIG. 1) was produced according to the method for producing a semiconductor device described above. That is, the resin composition was heated to 80 ° C. on a printed circuit board (glass epoxy substrate thickness: 0.8 mm) and potted in a molten state. This is placed on a stage heated to 100 ° C., and a connection electrode (eutectic solder: melting point 183 ° C., electrode height: 80 μm, number of electrodes 2000) is provided at a predetermined position on the resin composition. The element (thickness: 600 μm, size 10 mm × 10 mm) was mounted on a chip using a flip chip bonder (manufactured by Kyushu Matsushita: FB30T-M) (temperature = 100 ° C., pressure = 1 g / piece (9.8 × 10)). ^-3 N / piece), time = 1 second). Thus, the molten resin is filled in the gap between the printed circuit board and the semiconductor element. Thereafter, solder bonding (JEDEC condition) was performed using a solder reflow furnace (manufactured by Jard: MJ-R4000) to obtain electrical connection. Thereafter, resin curing was performed at 170 ° C. for 120 minutes using the solder reflow furnace, and a target semiconductor device was manufactured. Said evaluation was performed about the obtained semiconductor device. The results are shown in Tables 3 and 4.

  From the results of Table 3 and Table 4, the example product contains silica particles having a specific particle size, and further uses a resin composition having a viscosity of 5000 Pa · s or less measured at 80 ° C. It was confirmed that excellent solderability, workability, and connection reliability were ensured as compared with the comparative product.

  The resin composition for encapsulating a semiconductor according to the present invention can be used for encapsulating a gap between a printed circuit board and a semiconductor element in the semiconductor industry.

FIG. 1 shows an example of a semiconductor device of the present invention. FIG. 2 shows an example of a process explanatory diagram of the method for manufacturing a semiconductor device of the present invention. FIG. 3 shows an example of a process explanatory diagram of the method for manufacturing a semiconductor device of the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Wiring circuit board 2 Electrode for connection 3 Semiconductor element 4 Sealing resin layer 5 Resin composition for semiconductor sealing

Claims (4)

The viscosity measured at 80 ° C. is 5000 Pa · s or less,
(A) an epoxy resin having two or more epoxy groups in one molecule;
A resin composition for encapsulating a semiconductor comprising (B) a curing agent, and (C) silica particles having an average particle diameter dmax of 3 to 50 nm and a half width of 1.5 times or less of the average particle diameter dmax.   The resin composition for semiconductor encapsulation according to claim 1, wherein the silica particles are dispersed in the epoxy resin. 3. The resin composition for semiconductor encapsulation according to claim 1, wherein a thermal expansion coefficient measured at a temperature of Tg of a cured product of the resin composition for semiconductor encapsulation is 70 × 10 ⁻⁶ / K or less. Stuff. A semiconductor device sealed with the semiconductor sealing resin composition according to claim 1.

Images