JP2002221510A - Storage type chemical / physical phenomenon detection device - Google Patents
Storage type chemical / physical phenomenon detection deviceInfo
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- JP2002221510A JP2002221510A JP2001018904A JP2001018904A JP2002221510A JP 2002221510 A JP2002221510 A JP 2002221510A JP 2001018904 A JP2001018904 A JP 2001018904A JP 2001018904 A JP2001018904 A JP 2001018904A JP 2002221510 A JP2002221510 A JP 2002221510A
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Abstract
(57)【要約】
【課題】 化学物理現象を検出するセンサ素子をアレイ
状に配置して複数の化学物理現象を検出したり、同一の
化学物理現象でも、その分布を一度に検出することがで
きる蓄積型化学・物理現象検出装置を提供する。
【解決手段】 累積型化学・物理現象装置を複数個、1
次元または2次元に並べた蓄積型化学・物理現象検出装
置アレイ1と、垂直選択器2と、水平選択器4とを備
え、一度に複数の化学・物理現象を検出する、または同
一の化学・物理現象の1次元または2次元の分布の状況
を一度に検出する。
(57) [Summary] [PROBLEMS] To detect a plurality of chemical physical phenomena by arranging sensor elements for detecting chemical physical phenomena in an array or to detect the distribution of the same chemical physical phenomenon at once. Provide a storage-type chemical and physical phenomenon detection device that can be used. A plurality of cumulative chemical / physical phenomena devices are provided.
A storage type chemical / physical phenomenon detection device array 1, which is arranged two-dimensionally or two-dimensionally, a vertical selector 2, and a horizontal selector 4, for detecting a plurality of chemical / physical phenomena at once, or for the same chemical / physical phenomenon. One-dimensional or two-dimensional distribution of physical phenomena is detected at once.
Description
【0001】[0001]
【発明の属する技術分野】本発明は、化学物理現象の検
出を行う蓄積型化学・物理現象検出装置(AMIS)に
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an accumulation type chemical / physical phenomenon detecting device (AMIS) for detecting a chemical / physical phenomenon.
【0002】[0002]
【従来の技術】従来、このような分野の技術としては、
例えば、本願発明者によって提案された特願2000−
293669号がある。2. Description of the Related Art Conventionally, techniques in such a field include:
For example, Japanese Patent Application No. 2000-
No. 293669.
【0003】図4はかかる蓄積型化学・物理現象検出装
置の構成図である。FIG. 4 is a block diagram of such a storage type chemical / physical phenomenon detecting apparatus.
【0004】この図において、ID はインプットダイオ
ード、IG はインプットゲート、SPはセンシング部、
OG はアウトプットゲート、FDはフローティングダイ
オード、VDDは電源電圧端子、VRST はリセット端子、
VOUT は出力端子、VbNはバイアス電圧設定端子であ
る。In this figure, ID is an input diode, IG is an input gate, SP is a sensing unit,
O G is an output gate, FD is a floating diode, V DD is a power supply voltage terminal, V RST is a reset terminal,
V OUT is an output terminal, and V bN is a bias voltage setting terminal.
【0005】例えば、イオンセンシティブ電界効果トラ
ンジスタ(ISFET)を例に挙げて説明する。MOS
型電界効果トランジスタ(MOSFET:Metal−
Oxide−Semiconductor Field
Effect Transistor)のゲート電極
に、イオン感応膜の役割をする薄膜(水素イオンであれ
ばシリコン窒化膜が一般的である)を堆積した構造を持
つISFETを、適当な防水を施した後に、イオン濃度
を知りたい水溶液につける。For example, an ion sensitive field effect transistor (ISFET) will be described as an example. MOS
Field-effect transistor (MOSFET: Metal-
Oxide-Semiconductor Field
An ISFET having a structure in which a thin film serving as an ion-sensitive film (a silicon nitride film is generally used for hydrogen ions) is deposited on a gate electrode of an Effect Transistor, and after appropriately waterproofing, an ion concentration is measured. Apply to the aqueous solution you want to know.
【0006】その水溶液中には、さらにその水溶液の電
位を決めるための参照電極が配置されており、シリコン
窒化膜を設けたゲート電極を介して、水素イオン濃度に
見合った電位の変化がシリコン基板表面に現れる。する
と水素イオン濃度が変化し、その電位も変化する。この
シリコン表面の電位変化をトランジスタの電流の変化、
もしくは閾値電圧の変化として外部に取り出すことによ
り水溶液のイオン濃度を知ることができる。In the aqueous solution, a reference electrode for determining the potential of the aqueous solution is further disposed. Through a gate electrode provided with a silicon nitride film, a change in the potential corresponding to the hydrogen ion concentration is applied to the silicon substrate. Appear on the surface. Then, the hydrogen ion concentration changes, and its potential also changes. This potential change on the silicon surface is used to determine the change in transistor current,
Alternatively, the ion concentration of the aqueous solution can be known by taking out the change as a change in the threshold voltage.
【0007】このように、従来のAMIS構成では、V
RST 端子にリセット信号が加わることで、FD部がある
電位に固定され、そこにセンシング部SPからの信号電
荷を累積する構造になっていた。As described above, in the conventional AMIS configuration, V
When a reset signal is applied to the RST terminal, the FD section is fixed at a certain potential, and the signal charge from the sensing section SP is accumulated there.
【0008】[0008]
【発明が解決しようとする課題】しかしながら、上記し
た従来の蓄積型化学・物理現象検出装置によれば、検出
する検出部は一か所のみであり、複数の化学物理現象を
検出することは不可能であった。また、同一の化学物理
現象でも、その分布を一度に検出することは不可能であ
った。However, according to the conventional storage type chemical / physical phenomenon detecting apparatus described above, only one detecting unit is detected, and it is impossible to detect a plurality of chemical / physical phenomena. It was possible. Further, it was impossible to detect the distribution of the same chemical physical phenomenon at a time.
【0009】本発明は、上記問題点を除去し、化学物理
現象を検出するセンサ素子をアレイ状に配置して複数の
化学物理現象を検出したり、同一の化学物理現象でも、
その分布を一度に検出することができる蓄積型化学・物
理現象検出装置を提供することを目的とする。The present invention eliminates the above problems and arranges sensor elements for detecting chemical physical phenomena in an array to detect a plurality of chemical physical phenomena.
An object of the present invention is to provide a storage-type chemical / physical phenomenon detection device capable of detecting the distribution at a time.
【0010】[0010]
【課題を解決するための手段】本発明は、上記目的を達
成するために、 〔1〕累積型化学・物理現象検出装置において、累積型
化学・物理現象装置を複数個、1次元または2次元に並
べて蓄積型化学・物理現象検出装置アレイと、垂直選択
器と、水平選択器とを備え、一度に複数の化学・物理現
象を検出する、または同一の化学・物理現象の1次元ま
たは2次元の分布の状況を一度に検出することを特徴と
する。In order to achieve the above object, the present invention provides: [1] In a cumulative chemical / physical phenomenon detecting device, a plurality of one-dimensional or two-dimensional cumulative chemical / physical phenomenon devices are provided. An array of chemical / physical phenomena detectors, a vertical selector, and a horizontal selector arranged side by side to detect multiple chemical / physical phenomena at once, or one-dimensional or two-dimensional of the same chemical / physical phenomena Is characterized by detecting the distribution situation at a time.
【0011】〔2〕上記〔1〕記載の累積型化学・物理
現象検出装置において、列並列型雑音除去回路を具備す
ることを特徴とする。[2] The accumulative chemical / physical phenomenon detecting apparatus according to the above [1], further comprising a column-parallel noise removing circuit.
【0012】[0012]
【発明の実施の形態】以下、本発明の実施の形態につい
て詳細に説明する。Embodiments of the present invention will be described below in detail.
【0013】図1は本発明の実施例を示すアレイ化した
蓄積型化学・物理現象検出装置の構成図、図2はそのア
レイ化したときのセンシング部の構成図、図3はその列
並列型雑音除去回路(コラムCDS回路)の構成図であ
る。FIG. 1 is a block diagram of a storage type chemical / physical phenomenon detecting device according to an embodiment of the present invention, FIG. 2 is a block diagram of a sensing unit when the device is arrayed, and FIG. FIG. 3 is a configuration diagram of a noise removal circuit (column CDS circuit).
【0014】図1において、1は蓄積型化学・物理現象
検出装置アレイ、2は垂直選択器(V.SCANNE
R)、3はコラムCDS回路、4は水平選択器(H.S
CANNER)である。In FIG. 1, reference numeral 1 denotes an accumulation type chemical / physical phenomenon detection device array, and 2 denotes a vertical selector (V. SCANNE).
R), 3 is a column CDS circuit, 4 is a horizontal selector (H.S.
CANNER).
【0015】このように、図1は蓄積型化学・物理現象
検出装置を複数個、1次元もしくは2次元に並べ、アレ
イ状にしたものである。As described above, FIG. 1 shows a plurality of storage-type chemical / physical phenomenon detecting devices arranged one-dimensionally or two-dimensionally to form an array.
【0016】行の選択は垂直選択器(V.SCANNE
R)2で行い、そのための選択トランジスタを画素中に
設けた。そして、それらの複数個の検出装置を逐次駆動
するための操作回路を追加した。列の選択は、列ごとに
設けられたリセット雑音除去回路の出力段に設けておく
ことにより、リセット雑音除去を1列ごとに行うことが
できる。A row is selected by a vertical selector (V. SCANNE).
R) 2, and a selection transistor for that was provided in the pixel. Then, an operation circuit for sequentially driving the plurality of detection devices was added. By selecting a column at an output stage of a reset noise elimination circuit provided for each column, reset noise can be eliminated for each column.
【0017】以上の構造をとることにより、それぞれの
画素中に入れられた因子のデータを同時に、並行に得る
ことができ、分布や時間変化等がより解析しやすくな
り、本来のFET型センサのもつ出力増幅とS/N比の
向上を図ることができるとともに、より機能の向上した
化学・物理現象の検出装置を得ることができる。By adopting the above structure, the data of the factors put in each pixel can be obtained simultaneously and in parallel, the distribution and the time change can be more easily analyzed, and the original FET type sensor can be used. It is possible to improve the output amplification and the S / N ratio, and to obtain a chemical / physical phenomenon detecting device with improved functions.
【0018】AMISのアレイ構成〔2次元例〕の場
合、ここで、 Vsel :セレクト信号 AMISアレイの1つのセンサ部の構成は後述するが、
その要素を縦、横に並べる。その縦、横を並べて信号を
順次得るために、垂直選択器2、水平選択器4が付加さ
れている。コラムCDS回路とは、従来技術の1要素の
リセット雑音除去回路を列状に並べたものである。雑音
除去回路は1つのセンサ部に1つ付加してもかまわない
が、今回は1列に1個入れたときの列を示す。出力とし
てはVre s とVsig の差を取ることで得ることができ
る。In the case of the AMIS array configuration (two-dimensional example), V sel : select signal The configuration of one sensor unit of the AMIS array will be described later.
Arrange the elements vertically and horizontally. A vertical selector 2 and a horizontal selector 4 are added in order to obtain signals sequentially by arranging the signals vertically and horizontally. The column CDS circuit is formed by arranging one-element reset noise elimination circuits of the related art in a row. One noise removal circuit may be added to one sensor unit, but this time, a row when one is inserted in one row is shown. The output can be obtained by taking the difference between V re s and V sig.
【0019】アレイ化したときのセンシング部の場合 Vsel :垂直選択信号 である。In the case of a sensing unit when arrayed, V sel is a vertical selection signal.
【0020】垂直選択器2によりセンサ部を順次駆動す
るために、Vsel 信号によりセンサ部を選択して出力を
得るような構成になっている。In order to sequentially drive the sensor section by the vertical selector 2, the sensor section is selected by the Vsel signal to obtain an output.
【0021】〔列並列型雑音除去回路(コラムCDS回
路)の構成〕は、図3に示すように構成される。The configuration of the column parallel noise elimination circuit (column CDS circuit) is configured as shown in FIG.
【0022】ここで、A:AMIS要素 VOUT はAMISの構成と一致する Crst :リセットレベル記憶用容量 Csig :信号レベル記憶用容量 Vrst :リセットの出力 Vsig :信号の出力 RH(i):i番目の容量リセット信号 SH(i):i番目のセンサ出力信号 以下、列並列雑音除去回路(コラムCDS回路)におけ
る各部の動作の説明を行う。Here, A: AMIS element V OUT matches the configuration of AMIS C rst : Capacity for storing reset level C sig : Capacity for storing signal level V rst : Output of reset V sig : Output of signal RH (i ): I-th capacitance reset signal SH (i): i-th sensor output signal The operation of each section in the column parallel noise elimination circuit (column CDS circuit) will be described below.
【0023】列並列雑音除去回路は、 1.リセット雑音除去回路に信号を導く前にRH(i)
をオンにして両容量の電位をそろえ、その後オフにす
る。The column parallel noise elimination circuit is as follows: Before leading the signal to the reset noise removal circuit, RH (i)
Is turned on to equalize the potentials of both capacitors, and then turned off.
【0024】2.ΦRをオンにしてAMISのFD部を
リセットした直後の出力をリセットレベル記憶用容量C
rst に記憶させ、ΦRをオフにする。2. The output immediately after resetting the FD section of the AMIS by turning on ΦR is the reset level storage capacity C
Store in rst and turn off ΦR.
【0025】3.ΦSをオンにしてAMISのFD部に
複数回信号を蓄積した後の信号を信号レベル記憶用容量
Csig に記憶させ、ΦSをオフにする。3. After turning on ΦS and storing the signal in the FD section of the AMIS a plurality of times, the signal is stored in the signal level storage capacitor C sig , and ΦS is turned off.
【0026】4.次に、SH(i)をオンにして両容量
からの信号を出力させる。4. Next, SH (i) is turned on to output signals from both capacitors.
【0027】5.この両者の差分の信号を差動増幅器等
で読み取ることで、リセットの雑音を除去した信号が得
られる。5. By reading the signal of the difference between the two with a differential amplifier or the like, a signal from which reset noise has been removed can be obtained.
【0028】6.次に、1から5番目の動作を、RH
(i+1)の端子に信号を与えて順次駆動する。6. Next, the first to fifth operations are performed using RH
A signal is applied to the terminal (i + 1) to drive sequentially.
【0029】なお、本発明は上記実施例に限定されるも
のではなく、本発明の趣旨に基づいて種々の変形が可能
であり、これらを本発明の範囲から排除するものではな
い。It should be noted that the present invention is not limited to the above-described embodiment, and various modifications are possible based on the gist of the present invention, and these are not excluded from the scope of the present invention.
【0030】[0030]
【発明の効果】以上、詳細に説明したように、本発明に
よれば、以下のような効果を奏することができる。As described above, according to the present invention, the following effects can be obtained.
【0031】同時に複数の異なる因子のデータを得るこ
とができる。つまり、複数の化学物理現象を同時に、も
しくは同一の化学物理現象の分布を一度に取得すること
が可能となる。Data of a plurality of different factors can be obtained at the same time. That is, it is possible to acquire a plurality of chemical physics phenomena at the same time or to obtain the distribution of the same chemical physics at a time.
【図1】本発明の実施例を示すアレイ化した蓄積型化学
・物理現象検出装置の構成図である。FIG. 1 is a configuration diagram of an accumulation type chemical / physical phenomenon detection device in an array showing an embodiment of the present invention.
【図2】本発明の実施例を示すアレイ化したときのセン
シング部の構成図である。FIG. 2 is a configuration diagram of a sensing unit in an array according to the embodiment of the present invention.
【図3】本発明の実施例を示す列並列型雑音除去回路
(コラムCDS)の構成図である。FIG. 3 is a configuration diagram of a column-parallel noise elimination circuit (column CDS) according to an embodiment of the present invention.
【図4】従来の蓄積型化学・物理現象検出装置の構成図
である。FIG. 4 is a configuration diagram of a conventional storage-type chemical / physical phenomenon detection device.
1 蓄積型化学・物理現象検出装置アレイ 2 垂直選択器(V.SCANNER) 3 コラムCDS回路 4 水平選択器(H.SCANNER) Reference Signs List 1 Storage type chemical / physical phenomenon detection device array 2 Vertical selector (V. SCANNER) 3 Column CDS circuit 4 Horizontal selector (H. SCANNER)
Claims (2)
個、1次元または2次元に並べた蓄積型化学・物理現象
検出装置アレイと、(b)垂直選択器と、(c)水平選
択器とを備え、(d)一度に複数の化学・物理現象を検
出する、または同一の化学・物理現象の1次元または2
次元の分布の状況を一度に検出することを特徴とする累
積型化学・物理現象検出装置。1. An accumulation type chemical / physical phenomenon detection device array in which (a) a plurality of accumulation type chemical / physical phenomenon devices are arranged in one or two dimensions, (b) a vertical selector, and (c) a horizontal direction. (D) detecting a plurality of chemical / physical phenomena at one time, or one-dimensional or two-dimensional of the same chemical / physical phenomena
An accumulative chemical / physical phenomena detection device characterized by detecting a dimensional distribution situation at a time.
出装置において、列並列型雑音除去回路を具備すること
を特徴とする累積型化学・物理現象検出装置。2. The cumulative chemical / physical phenomenon detecting device according to claim 1, further comprising a column parallel type noise elimination circuit.
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|---|---|---|---|
| JP2001018904A JP2002221510A (en) | 2001-01-26 | 2001-01-26 | Storage type chemical / physical phenomenon detection device |
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