JP2002141201A - Thin-film resistor and its manufacturing method - Google Patents
Thin-film resistor and its manufacturing methodInfo
- Publication number
- JP2002141201A JP2002141201A JP2000336000A JP2000336000A JP2002141201A JP 2002141201 A JP2002141201 A JP 2002141201A JP 2000336000 A JP2000336000 A JP 2000336000A JP 2000336000 A JP2000336000 A JP 2000336000A JP 2002141201 A JP2002141201 A JP 2002141201A
- Authority
- JP
- Japan
- Prior art keywords
- film resistor
- thin film
- sputtering
- thin
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 53
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 23
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 13
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 13
- 150000003624 transition metals Chemical class 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 5
- 238000004544 sputter deposition Methods 0.000 claims description 25
- 239000011651 chromium Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 16
- 229910052804 chromium Inorganic materials 0.000 claims description 15
- 239000011261 inert gas Substances 0.000 claims description 9
- 239000000919 ceramic Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 4
- 230000032683 aging Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- DYRBFMPPJATHRF-UHFFFAOYSA-N chromium silicon Chemical compound [Si].[Cr] DYRBFMPPJATHRF-UHFFFAOYSA-N 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Non-Adjustable Resistors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は薄膜抵抗器及びその
製造方法に係り、特に高い比抵抗領域において安定した
温度係数等の特性を低コストで得ることができる薄膜抵
抗体の形成方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film resistor and a method of manufacturing the same, and more particularly to a method of forming a thin film resistor capable of obtaining stable characteristics such as a temperature coefficient in a high resistivity region at low cost.
【０００２】[0002]
【従来の技術】金属薄膜抵抗体は、薄膜チップ抵抗器等
に広く用いられている。この薄膜チップ抵抗器に用いら
れる薄膜抵抗体は、例えばクロム（Ｃｒ）とシリコン
（Ｓｉ）、又はニッケル（Ｎｉ）とクロム（Ｃｒ）等の
金属をセラミック基板上にスパッタリング又は真空蒸着
により着膜し合金化して、これをフォトリソグラフィ等
により所要の形状に加工して抵抗器としたものである。
係るチップ抵抗器においては、特に例えば５００μΩｃ
ｍ以下の比抵抗を用いて形成された抵抗器において良好
な抵抗値精度と共に良好な温度係数等の特性が得られ、
高精度チップ抵抗器として広く各種電子機器に用いられ
ている。2. Description of the Related Art Metal thin film resistors are widely used for thin film chip resistors and the like. A thin film resistor used in this thin film chip resistor is formed by depositing a metal such as chromium (Cr) and silicon (Si) or nickel (Ni) and chromium (Cr) on a ceramic substrate by sputtering or vacuum evaporation. It is alloyed and processed into a required shape by photolithography or the like to form a resistor.
In such a chip resistor, particularly, for example, 500 μΩc
m, a resistor formed using a specific resistance of not more than m can obtain characteristics such as a good temperature coefficient and a good resistance value accuracy,
Widely used in various electronic devices as high precision chip resistors.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、係る薄
膜抵抗体においては、高比抵抗領域で小さな温度係数等
の商業的に利用可能な十分に安定した特性を有する抵抗
体を形成することが難しい。即ち、例えば抵抗温度係数
が±２５ｐｐｍ／℃以下で２００μΩｃｍ以上の抵抗体
皮膜を形成することは薄膜抵抗体材料としてニッケル・
クロム材を用いては困難であった。同様に、クロム・シ
リコン材を用いた場合にも、抵抗体皮膜としては例えば
５００μΩｃｍ程度を形成することができるが、この場
合にも温度係数は上述した、例えば±２５ｐｐｍ／℃以
下のものを安定に得ることが難しく、一般に高比抵抗領
域の温度係数等の温度に関する特性の安定性がよくなか
った。又、一般的に高比抵抗皮膜の形成は絶縁物の含有
量が多くなるため、そのスパッタリングは高価な高周波
電源が必要となっている。However, in such a thin film resistor, it is difficult to form a resistor having sufficiently stable characteristics that can be used commercially, such as a small temperature coefficient in a high resistivity region. That is, for example, forming a resistor film having a resistance temperature coefficient of ± 25 ppm / ° C. or less and a resistance film of 200 μΩcm or more requires nickel thin film as a thin film resistor material.
It was difficult to use chromium. Similarly, when a chromium-silicon material is used, a resistor film of, for example, about 500 μΩcm can be formed. It is generally difficult to obtain such characteristics, and generally the stability of characteristics relating to temperature, such as the temperature coefficient of the high resistivity region, is not good. In general, the formation of a high specific resistance film requires a high-frequency power source, which is expensive, because the content of the insulator increases.
【０００４】本発明は上記事情に鑑み為されたもので、
温度係数等の温度に関する特性の安定性が良好で高抵抗
値が容易に得られ且つ低コストの装置で形成できる薄膜
抵抗器及びその製造方法を提供することを目的とする。[0004] The present invention has been made in view of the above circumstances,
It is an object of the present invention to provide a thin-film resistor that has good stability of temperature-related characteristics such as a temperature coefficient, can easily obtain a high resistance value, and can be formed by a low-cost device, and a method of manufacturing the same.
【０００５】[0005]
【課題を解決するための手段】本発明の薄膜抵抗器は、
金属薄膜抵抗体を基板表面に配置した薄膜抵抗器におい
て、前記薄膜抵抗体がクロムとシリコンにバルブ金属又
は遷移金属を加えた材料からなることを特徴とする。According to the present invention, there is provided a thin film resistor comprising:
In a thin film resistor having a metal thin film resistor disposed on a substrate surface, the thin film resistor is made of a material obtained by adding a valve metal or a transition metal to chromium and silicon.
【０００６】上述した本発明によれば、クロムとシリコ
ンにＮｂ、Ｔａ、Ａｌ、Ｃｕ、Ｍｎ、Ｚｒ、Ｎｉのいず
れか又はこれらの組合せからなるバルブ金属又は遷移金
属を含んで金属薄膜をスパッタリングにより形成するこ
とで、良好な温度係数をはじめ、特に温度に関して安定
した特性が得られる高比抵抗領域の薄膜抵抗体を形成す
ることができる。従って、この薄膜抵抗体を用いること
により、高抵抗値で、且つ温度係数が小さい薄膜抵抗器
が得られる。ここで、該当金属はＮｂ、Ｔａ、Ａｌ、Ｃ
ｕ、Ｍｎ、Ｚｒ、Ｎｉ等について上述した良好な特性が
得られる。According to the present invention described above, a metal thin film containing chromium and silicon containing a valve metal or a transition metal composed of any one of Nb, Ta, Al, Cu, Mn, Zr and Ni or a combination thereof is formed by sputtering. By forming the thin film resistor, it is possible to form a thin film resistor in a high resistivity region in which a stable characteristic with respect to a temperature, particularly a good temperature coefficient, can be obtained. Therefore, by using this thin film resistor, a thin film resistor having a high resistance value and a small temperature coefficient can be obtained. Here, the applicable metals are Nb, Ta, Al, C
The favorable characteristics described above are obtained for u, Mn, Zr, Ni, and the like.
【０００７】又、本発明の薄膜抵抗器の製造方法は、セ
ラミック基板に薄膜抵抗体を形成する薄膜抵抗器の製造
方法において、クロムとシリコンに加え、バルブ金属又
は遷移金属材料のいずれか又は数種を含んで、スパッタ
リングにより前記基板上に前記薄膜抵抗体を形成する工
程を含むことを特徴とする。ここで、前記スパッタリン
グに際して、不活性ガスに窒素ガスを加えた雰囲気下で
前記スパッタリングを行うことが好ましい。The method of manufacturing a thin film resistor according to the present invention is a method of manufacturing a thin film resistor in which a thin film resistor is formed on a ceramic substrate. A step of forming the thin-film resistor on the substrate by sputtering, including a seed. Here, at the time of the sputtering, it is preferable to perform the sputtering in an atmosphere in which a nitrogen gas is added to an inert gas.
【０００８】これにより、薄膜チップ抵抗器、又はネッ
トワーク素子等において、比較的高い抵抗領域におい
て、小さな温度係数等の良好な特性を有する抵抗素子を
良好な歩留で生産することができる。又、スパッタリン
グ時にＡｒ等の不活性ガスにＮ ２ガスを混合しつつ着膜
することで、高比抵抗領域における抵抗値の制御を容易
に行える。As a result, a thin-film chip resistor or a network
In relatively high resistance areas of
Resistance element having good characteristics such as a small temperature coefficient.
It can be produced with good yield. Also, sputter
To inert gas such as Ar 2Deposition while mixing gas
Makes it easy to control the resistance value in the high resistivity region
Can be done.
【０００９】又、この方法で形成される高比抵抗の薄膜
抵抗体は、ターゲットに絶縁物を含まないため、高価な
高周波電源が不要であり、安価な直流電源のみで十分な
スパッタリング速度が得られる。Further, the thin film resistor having a high specific resistance formed by this method does not require an expensive high-frequency power supply because the target does not contain an insulator, and a sufficient sputtering rate can be obtained with only an inexpensive DC power supply. Can be
【００１０】[0010]
【発明の実施の形態】以下、本発明の実施の形態を図１
及び２を参照しながら説明する。FIG. 1 is a block diagram showing an embodiment of the present invention.
This will be described with reference to FIGS.
【００１１】図１は、本発明の実施の形態の薄膜抵抗体
の形成方法を模式的に示す。スパッタリング装置に着膜
対象のセラミック基板１１を装着し、これに対面するよ
うにシリコンのターゲット１３、クロムのターゲット１
５、バルブ金属又は遷移金属のターゲット１７をそれぞ
れ配置する。スパッタリング装置には、不活性ガス、例
えばＡｒ、とＮ２の混合ガスを流しつつスパッタリング
着膜を行う。不活性ガスとＮ２ガスは別々にチャンバー
に供給されてチャンバー内で混合しても、あらかじめ混
合されたボンベ等から供給してもよい。FIG. 1 schematically shows a method of forming a thin film resistor according to an embodiment of the present invention. A ceramic substrate 11 to be deposited is mounted on a sputtering apparatus, and a silicon target 13 and a chromium target 1 are faced thereto.
5. Arrange the targets 17 of the valve metal or the transition metal. Sputter deposition is performed in the sputtering apparatus while flowing an inert gas, for example, a mixed gas of Ar and N 2 . The inert gas and the N 2 gas may be separately supplied to the chamber and mixed in the chamber, or may be supplied from a pre-mixed cylinder or the like.
【００１２】スパッタリングは、低圧の不活性ガス雰囲
気下でターゲットと着膜対象の基板間に直流電圧等を印
加することにより、電離した不活性ガスイオンがそれぞ
れのターゲットを叩くことにより、クロム材１３、シリ
コン材１５、バルブ金属又は遷移金属材１７からそれぞ
れの金属元素が飛び出して基板１１の表面に着膜して合
金化することにより行われる。なお、この実施例では、
クロム、シリコン、及びバルブ金属又は遷移金属をそれ
ぞれ別個のターゲットを作成してスパッタリングを行う
例について説明したが、予め所望の成分比を有するクロ
ム、シリコン、バルブ金属又は遷移金属からなる合金タ
ーゲットを準備しておき、この一枚のターゲットからス
パッタリング着膜を行うようにしてもよい。又、電源は
ターゲットがすべて金属材であるので安価な直流電源で
十分であるが、高周波電源を使用しても何ら問題はな
い。In sputtering, a DC voltage or the like is applied between a target and a substrate to be deposited in a low-pressure inert gas atmosphere, and ionized inert gas ions strike each target, thereby forming a chromium material 13. Each metal element jumps out of the silicon material 15, the valve metal or the transition metal material 17, deposits on the surface of the substrate 11, and is alloyed. In this embodiment,
An example was described in which chromium, silicon, and a valve metal or a transition metal were separately formed to perform sputtering, but an alloy target made of chromium, silicon, a valve metal, or a transition metal having a desired component ratio was prepared in advance. In addition, the sputtering deposition may be performed from the single target. In addition, as the power supply, an inexpensive DC power supply is sufficient because the target is entirely made of a metal material, but there is no problem even if a high-frequency power supply is used.
【００１３】スパッタリング着膜においては、クロム、
シリコン、及びバルブ金属又は遷移金属のいずれか又は
数種の組合せの成分比により各種特性を有する薄膜抵抗
体が形成される。そして、スパッタリング成膜時に不活
性ガス（Ａｒ）雰囲気中にＮ ２ガスを混入することによ
り、形成される薄膜抵抗体の比抵抗が高くなる傾向があ
る。即ち、例えばベースとなるＡｒガスに対してＮ２ガ
スを１０％程度混入することで、比較的高い比抵抗５０
０μΩｃｍ程度が得られ、又Ｎ２ガスを４０％程度混入
することによりその比抵抗を１００００μΩｃｍ程度ま
で上げることができ、このように不活性ガス（Ａｒ）と
Ｎ２ガスの混合比を変えることにより自由に所望する比
抵抗を得ることが出来る。In the sputtering deposition, chromium,
Silicon, and either valve metal or transition metal or
Thin film resistors with various characteristics depending on the composition ratio of several combinations
A body is formed. And it is inactive during sputtering film formation
N in an inert gas (Ar) atmosphere 2By mixing gas
And the specific resistance of the formed thin film resistor tends to increase.
You. That is, for example, N gas is used for the base Ar gas.2Moth
About 10%, a relatively high specific resistance of 50%.
About 0μΩcm is obtained.2About 40% mixed gas
The specific resistance to about 10,000μΩcm.
With inert gas (Ar)
N2The desired ratio can be freely set by changing the gas mixing ratio.
Resistance can be obtained.
【００１４】次に、図２を参照して本発明の着膜方法を
用いた薄膜チップ抵抗器の製造方法について説明する。
まず（ａ）に示すように、アルミナ等のセラミック基板
１１を準備する。そして、（ｂ）に示すように上述した
シリコンとクロムにバルブ金属又は遷移金属を加えたタ
ーゲット材を用いてスパッタリングによる着膜を行う。
着膜２１の厚さは、例えば１０００Å程度である。そし
て、（ｃ）に示すようにフォトリソ技術を用いてパター
ニングを行い薄膜抵抗体パターン２１ａを形成する。こ
れにより、例えば数百ｋΩの高い抵抗値の薄膜抵抗体が
得られる。そして、セラミック基板の裏面側からレーザ
スクライバを用いてスクライブ用の切り込みを設ける。Next, a method of manufacturing a thin film chip resistor using the film deposition method of the present invention will be described with reference to FIG.
First, as shown in (a), a ceramic substrate 11 of alumina or the like is prepared. Then, as shown in (b), a film is formed by sputtering using a target material obtained by adding a valve metal or a transition metal to silicon and chromium as described above.
The thickness of the deposited film 21 is, for example, about 1000 °. Then, as shown in (c), patterning is performed by using a photolithography technique to form a thin film resistor pattern 21a. Thereby, a thin film resistor having a high resistance value of, for example, several hundred kΩ can be obtained. Then, scribing cuts are provided from the back side of the ceramic substrate using a laser scriber.
【００１５】次に、下地電極２３の着膜を行う。下地電
極としては、例えばＣｕのスパッタリング膜が用いら
れ、例えばメタルマスクを用いてスパッタリングを行う
ことにより図示の形状の下地電極２３を形成する。な
お、この下地電極２３はセラミック基板の裏面側にも同
様にメタルマスク等を用いてスパッタリングにより形成
する。次に、Ｎ２ガス雰囲気中でエージング処理を行
う。このエージング処理は、例えば温度が５００−７０
０℃程度で行われ、スパッタリング着膜時の膜質の調整
がなされる。従って、このエージング処理により温度係
数が例えば±２５ｐｐｍ／℃程度と極めて小さく、且つ
直線的な特性が得られる。さらにレーザトリミングを施
し、抵抗値の高精度の調整を行う。Next, the base electrode 23 is deposited. As the base electrode, for example, a Cu sputtering film is used, and the base electrode 23 having the illustrated shape is formed by performing sputtering using, for example, a metal mask. The base electrode 23 is also formed on the back side of the ceramic substrate by sputtering using a metal mask or the like. Next, an aging process is performed in an N 2 gas atmosphere. This aging treatment is performed, for example, at a temperature of 500-70.
This is performed at about 0 ° C., and the film quality at the time of sputtering deposition is adjusted. Therefore, the aging process provides a very small temperature coefficient of, for example, about ± 25 ppm / ° C. and linear characteristics. Further, laser trimming is performed to adjust the resistance value with high accuracy.
【００１６】そして、（ｅ）に示すようにオーバコート
膜２５を形成する。このオーバコート膜は、例えば樹脂
の保護膜であり、樹脂ペーストをスクリーン印刷等で形
成後に硬化して形成する。次に、上述したレーザスクラ
イブ線に沿って１次ブレークを行い、短冊状のチップ群
を形成する。そして、露出した基板端面に端面下地電極
２７を形成する。そして、２次ブレークを行い個々のチ
ップとし、端面下地電極及び基板の上面及び下面の下地
電極にニッケル鍍金及びハンダ鍍金を施し、これにより
電極部２９が形成され、チップ抵抗器が完成する。Then, an overcoat film 25 is formed as shown in FIG. The overcoat film is, for example, a resin protective film, and is formed by curing a resin paste after screen printing or the like. Next, a primary break is performed along the above-described laser scribe line to form a strip-shaped chip group. Then, an end face base electrode 27 is formed on the exposed end face of the substrate. Then, a secondary break is performed to form individual chips, and nickel plating and solder plating are applied to the end face base electrode and the base electrodes on the upper and lower surfaces of the substrate, whereby the electrode portion 29 is formed, and the chip resistor is completed.
【００１７】このようにして製造されたチップ抵抗器に
よれば、薄膜抵抗体はクロムとシリコンにバルブ金属又
は遷移金属が含まれて形成されているので、これにより
特に数百ｋΩ程度以上の高抵抗領域において、温度係数
が例えば±２５ｐｐｍ／℃以下の安定した特性を実現で
きる。即ち、例えば１ＭΩの薄膜チップ抵抗器としては
高い抵抗値を有すると共に、低い温度係数を有し、且つ
温度に対して直線的な特性を有する薄膜チップ抵抗器を
安定に生産することが可能となる。According to the chip resistor manufactured as described above, the thin film resistor is formed of chromium and silicon containing a valve metal or a transition metal. In the resistance region, stable characteristics with a temperature coefficient of, for example, ± 25 ppm / ° C. or less can be realized. That is, for example, a thin film chip resistor having a high resistance value, a low temperature coefficient, and a linear characteristic with respect to temperature can be stably produced as a 1 MΩ thin film chip resistor. .
【００１８】なお、上述した実施形態は薄膜チップ抵抗
器について説明したが、ネットワーク素子、集積回路素
子、或いはその他の形式の各種薄膜抵抗体についても、
本発明の趣旨を同様に適用できることは勿論である。Although the above-described embodiment has been described with respect to a thin film chip resistor, a network device, an integrated circuit device, or various types of thin film resistors may be used.
It goes without saying that the gist of the present invention can be similarly applied.
【００１９】[0019]
【発明の効果】以上説明したように、本発明によれば、
小さな温度係数が安定に得られ、特に温度に対して安定
した特性を有する高い抵抗値の薄膜抵抗器を実現するこ
とができる。As described above, according to the present invention,
A small temperature coefficient can be stably obtained, and a thin film resistor having a high resistance value and particularly stable characteristics with respect to temperature can be realized.
【図１】本発明の実施形態のスパッタリング着膜を模式
的に示した図である。FIG. 1 is a diagram schematically showing a sputtering deposition according to an embodiment of the present invention.
【図２】本発明の実施形態の薄膜チップ抵抗器の製造方
法を説明した図である。FIG. 2 is a diagram illustrating a method for manufacturing a thin-film chip resistor according to an embodiment of the present invention.
１１ セラミック基板 ２１ クロム・シリコンにバルブ金属又は遷移金
属を含んだ膜 ２１ａ 薄膜抵抗体パターン ２３ 下地電極 ２５ オーバコート膜 ２７ 下地端面電極 ２９ 電極部Reference Signs List 11 ceramic substrate 21 film containing valve metal or transition metal in chromium / silicon 21a thin film resistor pattern 23 base electrode 25 overcoat film 27 base end face electrode 29 electrode part
───────────────────────────────────────────────────── フロントページの続き (72)発明者 小口 友規 長野県上伊那郡箕輪町大字中箕輪14016 コーア株式会社内 Ｆターム(参考） 5E033 AA06 BA03 ────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Tomoki Oguchi 14016 Nakaminowa, Minowa-cho, Kamiina-gun, Nagano F-term in Core Co., Ltd. 5E033 AA06 BA03
Claims (4)
膜抵抗器において、前記薄膜抵抗体がクロムとシリコン
にバルブ金属又は遷移金属を加えた材料からなることを
特徴とする薄膜抵抗器。1. A thin film resistor having a metal thin film resistor arranged on a substrate surface, wherein the thin film resistor is made of a material obtained by adding a valve metal or a transition metal to chromium and silicon.
薄膜抵抗器の製造方法において、クロムとシリコンに加
え、Ｎｂ、Ｔａ、Ａｌ、Ｃｕ、Ｍｎ、Ｚｒ、Ｎｉのいず
れか又は数種からなるバルブ金属又は遷移金属材料を含
んで、スパッタリングにより前記基板上に前記薄膜抵抗
体を形成する工程を含むことを特徴とする薄膜抵抗器の
製造方法。2. A method of manufacturing a thin-film resistor for forming a thin-film resistor on a ceramic substrate, comprising a valve made of one or more of Nb, Ta, Al, Cu, Mn, Zr, and Ni in addition to chromium and silicon. A method for manufacturing a thin film resistor, comprising a step of forming the thin film resistor on the substrate by sputtering, including a metal or a transition metal material.
スに窒素ガスを加えた雰囲気下で前記スパッタリング着
膜を行うことを特徴とする請求項２記載の薄膜抵抗器の
製造方法。3. The method of manufacturing a thin film resistor according to claim 2, wherein the sputtering is performed in an atmosphere in which a nitrogen gas is added to an inert gas during the sputtering.
を用いて前記スパッタリングを行うことを特徴とする請
求項２又は３記載の薄膜抵抗器の製造方法。4. The method for manufacturing a thin film resistor according to claim 2, wherein the sputtering is performed by using a DC power supply at the time of the sputtering.
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|---|---|---|---|
| JP2000336000A JP2002141201A (en) | 2000-11-02 | 2000-11-02 | Thin-film resistor and its manufacturing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000336000A JP2002141201A (en) | 2000-11-02 | 2000-11-02 | Thin-film resistor and its manufacturing method |
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| Publication Number | Publication Date |
|---|---|
| JP2002141201A true JP2002141201A (en) | 2002-05-17 |
Family
ID=18811650
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|---|---|---|---|
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| Country | Link |
|---|---|
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|---|---|---|---|---|
| JP2007073651A (en) * | 2005-09-06 | 2007-03-22 | Sumitomo Metal Mining Co Ltd | Film resistor and method of manufacturing same |
| US20170011826A1 (en) * | 2015-07-07 | 2017-01-12 | Koa Corporation | Thin-film resistor and method for producing the same |
| CN108075459A (en) * | 2016-11-14 | 2018-05-25 | 国家电网公司 | Neutral point high resistant damping resistor |
| DE112017000522T5 (en) | 2016-01-27 | 2018-10-11 | Koa Corporation | Chip resistor and method of making the same |
| US10760156B2 (en) | 2017-10-13 | 2020-09-01 | Honeywell International Inc. | Copper manganese sputtering target |
| US11035036B2 (en) | 2018-02-01 | 2021-06-15 | Honeywell International Inc. | Method of forming copper alloy sputtering targets with refined shape and microstructure |
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|---|---|---|---|---|
| JP2007073651A (en) * | 2005-09-06 | 2007-03-22 | Sumitomo Metal Mining Co Ltd | Film resistor and method of manufacturing same |
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| CN108075459B (en) * | 2016-11-14 | 2019-09-06 | 国家电网公司 | Neutral point high damping resistor |
| US10760156B2 (en) | 2017-10-13 | 2020-09-01 | Honeywell International Inc. | Copper manganese sputtering target |
| US11035036B2 (en) | 2018-02-01 | 2021-06-15 | Honeywell International Inc. | Method of forming copper alloy sputtering targets with refined shape and microstructure |
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