JP2002134563A - Semiconductor manufacturing apparatus and semiconductor manufacturing method - Google Patents
Semiconductor manufacturing apparatus and semiconductor manufacturing methodInfo
- Publication number
- JP2002134563A JP2002134563A JP2000325601A JP2000325601A JP2002134563A JP 2002134563 A JP2002134563 A JP 2002134563A JP 2000325601 A JP2000325601 A JP 2000325601A JP 2000325601 A JP2000325601 A JP 2000325601A JP 2002134563 A JP2002134563 A JP 2002134563A
- Authority
- JP
- Japan
- Prior art keywords
- solder material
- semiconductor component
- mounting
- semiconductor
- mounting board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/757—Means for aligning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/758—Means for moving parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/759—Means for monitoring the connection process
Landscapes
- Wire Bonding (AREA)
Abstract
Description
【0001】[0001]
【発明が属する技術分野】本発明は、半導体製造装置及
び半導体製造方法に関し、特に半導体部品を半田バンプ
等を用いて基板上にフリップチップ実装する半導体製造
装置及び半導体製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus and a semiconductor manufacturing method, and more particularly to a semiconductor manufacturing apparatus and a semiconductor manufacturing method for flip-chip mounting a semiconductor component on a substrate using solder bumps or the like.
【0002】[0002]
【従来の技術】従来、半導体部品を基板にフリップチッ
プ実装する際、半導体部品と基板との熱膨張係数差によ
り接合バンプ部に歪みが生じて断線などが発生し、接合
信頼性に悪影響を与えている。この問題に対して、半田
バンプのつぶれを抑えてバンプ高さを高くすることでバ
ンプと基板の接合面への応力を緩和して接合信頼性を高
める手法がとられてきた。2. Description of the Related Art Conventionally, when a semiconductor component is flip-chip mounted on a substrate, a distortion occurs in a bonding bump due to a difference in thermal expansion coefficient between the semiconductor component and the substrate, causing a disconnection or the like, which adversely affects bonding reliability. ing. To solve this problem, a method has been adopted in which the collapse of the solder bumps is suppressed and the height of the bumps is increased to reduce the stress on the joint surface between the bumps and the substrate, thereby improving the joint reliability.
【0003】上記のように半田バンプのつぶれを抑制す
る接続方法として種々提案されているが、例えば特開平
04−299840号公報に示されている半田バンプの
接続法では、回路部品と回路基板の間に弾性隆起体を介
装し、その復元力で回路部品を押し上げることによっ
て、半田バンプのつぶれを抑制している。As described above, various connection methods for suppressing the collapse of solder bumps have been proposed. For example, in the connection method of solder bumps disclosed in Japanese Patent Application Laid-Open No. H04-299840, a circuit component and a circuit board are not connected. The elastic bumps are interposed therebetween and the circuit components are pushed up by the restoring force, thereby suppressing the collapse of the solder bumps.
【0004】図2を用いてその接続方法を説明する。図
2(a)において、ポリイミド等の絶縁ベース材11の
一方の面には所要の回路配線パターン12を有し、この
回路配線パターン12の表面には接着剤14によりポリ
イミドフィルム等の表面保護フィルム15を貼着し、こ
れらによって表面保護層16を形成する。この表面保護
層16はワニス状ポリイミドや絶縁性カバーコートイン
ク等を印刷塗布して形成することも可能である。また、
接続用半田バンプ13を突出形成した側の絶縁ベース材
11の面には、テフロン(登録商標)ゴムまたはシリコ
ーンゴム等の弾性部材からなる弾性隆起体17を、接続
用半田バンプ13の高さよりもその高さが高くなるよう
に形成してある。The connection method will be described with reference to FIG. In FIG. 2A, a required circuit wiring pattern 12 is provided on one surface of an insulating base material 11 such as polyimide, and a surface protection film such as a polyimide film is formed on the surface of the circuit wiring pattern 12 with an adhesive 14. 15 are adhered, and a surface protective layer 16 is formed by these. The surface protective layer 16 can also be formed by printing and coating varnish-like polyimide, insulating cover coat ink, or the like. Also,
An elastic protrusion 17 made of an elastic member such as Teflon (registered trademark) rubber or silicone rubber is provided on the surface of the insulating base material 11 on the side where the connection solder bump 13 is formed so as to protrude. It is formed so that its height becomes high.
【0005】図2(b)に示すように、まず弾性隆起体
17を有する回路配線基板の接続用半田バンプ13と、
ICチップ18の電極19とを対向させて位置合わせす
る。次に、接続用半田バンプ13を加熱溶融させながら
押し圧力を加えてICチップ18を押し下げ、ICチッ
プ18の電極19を、溶融したその半田でぬらすと共に
弾性隆起体17を圧縮変形させる。ここで押し圧力を解
除すると弾性隆起体17の復元力によりICチップ18
は押し上げられるので、溶融した接続用半田バンプ13
は引き伸ばされて鼓状の半田バンプに形成される。[0005] As shown in FIG. 2 (b), first, a connection solder bump 13 of a circuit wiring board having an elastic protrusion 17 is provided.
The electrodes 19 of the IC chip 18 are positioned so as to face each other. Next, the IC chip 18 is pressed down by applying a pressing force while heating and melting the solder bump 13 for connection, the electrode 19 of the IC chip 18 is wetted with the melted solder, and the elastic protrusion 17 is compressed and deformed. When the pressing force is released here, the IC chip 18
Is pushed up, the molten solder bump 13 for connection is used.
Are stretched to form drum-shaped solder bumps.
【0006】以上の工程により、図2(c)に示すよう
に、鼓状の半田バンプ20を介して回路配線基板の配線
パターン12は、ICチップ18の電極19と電気的に
接続される。Through the above steps, as shown in FIG. 2C, the wiring pattern 12 of the circuit wiring board is electrically connected to the electrodes 19 of the IC chip 18 via the drum-shaped solder bumps 20.
【0007】[0007]
【発明が解決しようとする課題】しかしながら、上記の
方式では以下のような問題点がある。However, the above method has the following problems.
【0008】第1の問題点は、隣りのバンプとのショー
トや、剪断歪み応力集中による断線が生ずることであ
る。その理由は、弾性隆起体の圧縮変形量が一定になら
ないため、半田バンプの押しつぶされる量が規定でき
ず、狭ピッチバンプでは隣りと接触するためである。ま
た、形成される半田バンプ形状も安定しないため、歪み
応力を緩和しきれないためである。The first problem is that a short circuit occurs between adjacent bumps and a disconnection occurs due to a concentration of shear strain stress. The reason is that since the amount of compressive deformation of the elastic protrusion is not constant, the amount of crushing of the solder bump cannot be specified, and the narrow pitch bump comes into contact with an adjacent one. Also, the shape of the formed solder bump is not stable, so that the strain stress cannot be alleviated.
【0009】第2の問題点は、従来技術ではコストがか
かることである。その理由は、全てのIC搭載箇所に弾
性隆起体をあらかじめ設置しておく必要があり、それに
対するコストを要するためである。A second problem is that the prior art is costly. The reason for this is that it is necessary to previously install the elastic ridges at all the IC mounting locations, which requires a cost.
【0010】第3の問題点は、製品品質のばらつきが大
きくなり、安定しないことである。その理由は、弾性隆
起体の反力でつぶれを押し戻そうとするため、押し戻り
量が一定にならず、半田バンプの高さも一定とならない
ためである。[0010] The third problem is that the product quality varies greatly and is not stable. The reason is that the crushing is pushed back by the reaction force of the elastic protrusion, so that the pushing back amount is not constant and the height of the solder bump is not constant.
【0011】そこで本発明は、半導体製品の接合信頼性
を向上させると共に、製造コストを削減し、生産性を向
上させることを課題としている。Accordingly, an object of the present invention is to improve the bonding reliability of semiconductor products, reduce manufacturing costs, and improve productivity.
【0012】[0012]
【課題を解決するための手段】上述の課題を解決するた
め、本発明は、半導体部品を実装基板に半田材を介して
フリップチップ実装する半導体製造装置であって、前記
半導体部品の接合面を前記実装基板の実装面に対向させ
た状態で保持する保持部と、前記半導体部品を前記実装
基板に搭載する方向に前記保持部を移動するアクチュエ
ータと、前記保持部の位置を検出する位置センサと、こ
の位置センサからの位置信号に基づき、前記アクチュエ
ータを位置制御する制御部と、前記半田材を加熱して溶
融させる加熱部とを備え、前記制御部は、前記アクチュ
エータの駆動電流をあらかじめ設定された制限値内に制
御して、前記保持部を前記半導体部品と前記実装基板と
が半田材を介して接触する位置に移動し、前記半田材を
溶融させた後、その半田材を押しつぶす方向に前記保持
部を所定量移動し、さらに半田材を引き伸ばす方向に前
記保持部を所定量移動して、前記半導体部品を前記実装
基板に接合する。SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention relates to a semiconductor manufacturing apparatus for flip-chip mounting a semiconductor component on a mounting board via a solder material. A holding unit that holds the semiconductor substrate facing the mounting surface of the mounting board, an actuator that moves the holding unit in a direction in which the semiconductor component is mounted on the mounting board, and a position sensor that detects a position of the holding unit. A control unit that controls the position of the actuator based on a position signal from the position sensor, and a heating unit that heats and melts the solder material, wherein the control unit sets a drive current of the actuator in advance. The holding part is moved to a position where the semiconductor component and the mounting board are in contact with each other via a solder material, and the solder material is melted. The holding portion in a direction to crush the solder material is moved by a predetermined amount, the more the holding portion in a direction to stretch the solder material by moving a predetermined amount, bonding the semiconductor part to the mounting substrate.
【0013】すなわち本発明は、半導体製造装置側に設
けたアクチュエータにより半導体部品を実装基板搭載位
置に制御し、加熱接合時における半田バンプの押しつぶ
し量を規定すると共に所定量を引き上げることによっ
て、一定高さを有する鼓状の半田バンプを形成する。こ
のとき位置制御するアクチュエータ駆動電流に制限値を
設けることで、規定の加圧力以上の推力は発生させず
に、半導体部品保持部の位置制御を行うものである。That is, according to the present invention, a semiconductor component is controlled to a mounting substrate mounting position by an actuator provided on a semiconductor manufacturing apparatus side, and the amount of crushing of solder bumps at the time of heating and joining is defined and the predetermined amount is raised, thereby achieving a certain height. A drum-shaped solder bump having a thickness is formed. At this time, by providing a limit value to the actuator drive current for controlling the position, the position of the semiconductor component holding unit is controlled without generating a thrust force exceeding a specified pressing force.
【0014】[0014]
【発明の実施の形態】次に、本発明の実施の形態につい
て図面を参照して説明する。Next, embodiments of the present invention will be described with reference to the drawings.
【0015】図1は、本発明に係る半導体製造装置の概
略構成を示す。搭載ノズル5は、半導体デバイス1を吸
着保持し、実装基板2に搭載後、加圧して加熱する。ヒ
ータテーブル3は、実装基板2を保持し、加熱する。位
置決めステージ4は、ヒータテーブル3上の実装基板2
を搭載ノズル3に保持された半導体デバイス1の直下に
移動し、半導体デバイス1の半田バンプと実装基板2の
電極とを位置合わせする。リニアモータ(アクチュエー
タ)6は、位置決めステージ4で位置合わせ後、搭載ノ
ズル5を実装基板2に対し垂直方向に降下させ、半導体
デバイス1が実装基板2に接触するように、搭載ノズル
5をダイレクトに駆動する。位置センサ7は、リニアモ
ータ6の位置を検出することによって、搭載ノズル5の
位置を検出し、リニアエンコーダ等によって構成され
る。FIG. 1 shows a schematic configuration of a semiconductor manufacturing apparatus according to the present invention. The mounting nozzle 5 holds the semiconductor device 1 by suction, mounts the semiconductor device 1 on the mounting substrate 2, and then pressurizes and heats the semiconductor device 1. The heater table 3 holds and heats the mounting board 2. The positioning stage 4 is mounted on the mounting board 2 on the heater table 3.
Is moved immediately below the semiconductor device 1 held by the mounting nozzle 3 to align the solder bumps of the semiconductor device 1 with the electrodes of the mounting board 2. After the linear motor (actuator) 6 is positioned by the positioning stage 4, the mounting nozzle 5 is lowered vertically to the mounting substrate 2, and the mounting nozzle 5 is directly moved so that the semiconductor device 1 contacts the mounting substrate 2. Drive. The position sensor 7 detects the position of the mounting nozzle 5 by detecting the position of the linear motor 6, and is configured by a linear encoder or the like.
【0016】コントローラ(制御部)8は、CPU,メ
モリ等を含むデジタル信号処理装置であり、プログラム
制御によって、位置センサ7からの位置信号に基づきリ
ニアモータ6を駆動制御すると共に、ヒータテーブル3
及び位置決めステージ4を制御する。コントローラ8
は、リニアモータ6の駆動電流値にリミットを設けて推
力が設定加圧力を越えないように制御しながら一連の搭
載動作を管理する。また、キーボード等の入力部から、
リニアモータ6の駆動電流の許容範囲内で任意の電流制
限値を入力することができる。The controller (control unit) 8 is a digital signal processing device including a CPU, a memory, and the like. The controller 8 controls driving of the linear motor 6 based on a position signal from the position sensor 7 by program control, and controls the heater table 3.
And the positioning stage 4 is controlled. Controller 8
Manages a series of mounting operations while limiting the drive current value of the linear motor 6 so that the thrust does not exceed the set pressure. Also, from an input unit such as a keyboard,
An arbitrary current limit value can be input within an allowable range of the drive current of the linear motor 6.
【0017】次に図1を参照して、本実施の形態の動作
を説明する。Next, the operation of the present embodiment will be described with reference to FIG.
【0018】まず、搭載ノズル5によって半導体デバイ
ス1を吸着保持する。一方、実装基板2をヒータテーブ
ル3によって保持する。次に位置決めステージ4を用い
て実装基板2上の電極位置を半導体デバイス1の半田バ
ンプに位置決めする。なお、半田バンプは、実装基板2
上の電極位置に、あらかじめ付着させておくこともでき
る。位置決め後、搭載ノズル5を降下させて半導体デバ
イス1の半田バンプを実装基板2に接触させる。このと
きリニアモータ6に流す駆動電流値に上限を設け、一定
推力以上の発生を防止している。First, the semiconductor device 1 is suction-held by the mounting nozzle 5. On the other hand, the mounting board 2 is held by the heater table 3. Next, the position of the electrode on the mounting substrate 2 is positioned on the solder bump of the semiconductor device 1 using the positioning stage 4. Note that the solder bumps are mounted on the mounting substrate 2.
It can be attached in advance to the upper electrode position. After the positioning, the mounting nozzle 5 is lowered to bring the solder bumps of the semiconductor device 1 into contact with the mounting substrate 2. At this time, an upper limit is set for the value of the drive current flowing through the linear motor 6 to prevent generation of a certain thrust or more.
【0019】位置センサ7からの信号を用いてリニアモ
ータ6により搭載ノズル5を位置制御した状態で、半導
体デバイス1と実装基板2とをそれぞれ加熱し、接合部
の半田バンプを溶融させる。半田バンプが溶融して液状
になったところで半田バンプを規定量だけ押しつぶすよ
うに搭載ノズル5を下方向に位置決めし、その後半田バ
ンプを引き伸ばすように搭載ノズル5を上方向に位置制
御する。この動作により半田バンプは高さ方向の中央付
近がくびれた鼓状の低歪構造となる。これにより、溶融
後、半田バンプが押しつぶされて太鼓状になるのを防止
し、常に同じ高さの鼓状半田バンプを形成して半田接合
を行う。While the position of the mounting nozzle 5 is controlled by the linear motor 6 using the signal from the position sensor 7, the semiconductor device 1 and the mounting substrate 2 are heated to melt the solder bumps at the joint. When the solder bump melts and becomes liquid, the mounting nozzle 5 is positioned downward so that the solder bump is crushed by a specified amount, and then the mounting nozzle 5 is positionally controlled upward so as to stretch the solder bump. By this operation, the solder bump has a drum-shaped low distortion structure in which the vicinity of the center in the height direction is narrowed. Thus, after melting, the solder bumps are prevented from being crushed and become drum-shaped, and solder bumps having the same height are always formed and soldered.
【0020】上記半導体部品を実装基板にフリップチッ
プ実装する半導体製造装置は、半導体部品としてCSP
(チップサイズパッケージ)やBGA(ボールグリッド
アレイ)、WLP(ウェハレベルパッケージ)等を用い
て、実装基板に半田接合することができる。A semiconductor manufacturing apparatus for flip-chip mounting the above semiconductor components on a mounting board uses a CSP as a semiconductor component.
(Chip size package), BGA (ball grid array), WLP (wafer level package), or the like, and can be soldered to the mounting substrate.
【0021】[0021]
【発明の効果】以上説明したように、本発明の第1の効
果は、隣のバンプとのショートや、応力集中による断線
を無くすことができることである。その理由は、加熱接
合時における半田バンプの押しつぶし量を規定するた
め、押しつぶしすぎることが無く、また所定量を引き上
げるため、一定高さを有する鼓状の半田バンプを形成す
ることができるからである。As described above, the first effect of the present invention is that a short circuit between adjacent bumps and a disconnection due to stress concentration can be eliminated. The reason is that the amount of crushing of the solder bumps during the heat bonding is specified, so that the solder bumps are not crushed too much, and since the predetermined amount is raised, a drum-shaped solder bump having a constant height can be formed. .
【0022】第2の効果は、コストを削減することがで
きることである。その理由は、従来技術では全てのIC
搭載箇所に弾性隆起体をあらかじめ設置しておくことが
必要であり、そのためのコストが掛かるが、本発明によ
れば、装置側に設けたアクチュエータにより制御するの
で、弾性隆起体を設置するコストが必要なくなるからで
ある。A second effect is that costs can be reduced. The reason is that all the ICs in the prior art
It is necessary to previously install the elastic ridge at the mounting location, which requires a cost, but according to the present invention, since the control is performed by the actuator provided on the device side, the cost of installing the elastic ridge is reduced. It is no longer necessary.
【0023】第3の効果は、製品接合部の高さばらつき
が小さくなり、品質が安定することである。その理由
は、従来技術では弾性隆起体の反力でつぶれを押し戻そ
うとするため、押し戻り量が一定にならず、半田バンプ
の高さも一定とならないが、本発明によれば、半田押し
つぶし後の引き伸ばし量が規定値に固定されるためであ
る。The third effect is that the variation in height of the product joint is reduced and the quality is stabilized. The reason is that, in the prior art, the crushing is pushed back by the reaction force of the elastic protrusion, so that the amount of pushing back is not constant and the height of the solder bumps is not constant, but according to the present invention, the solder crushing is performed. This is because the subsequent stretching amount is fixed to the specified value.
【図1】本発明に係る半導体製造装置の概略構成を示す
図である。FIG. 1 is a diagram showing a schematic configuration of a semiconductor manufacturing apparatus according to the present invention.
【図2】従来の半導体部品と基板との接続方法を示し、
(a)は接続前の要部構成、(b)は加圧状態、(c)
は接続完了後の要部を示す断面図である。FIG. 2 shows a conventional connection method between a semiconductor component and a substrate,
(A) is a main part configuration before connection, (b) is a pressurized state, (c)
FIG. 4 is a cross-sectional view showing a main part after connection is completed.
1 半導体デバイス 2 実装基板 3 ヒータテーブル 4 位置決めステージ 5 搭載ノズル 6 リニアモータ 7 位置センサ 8 コントローラ 11 絶縁ベース材 12 回路配線パターン 13 接続用半田バンプ 14 接着剤 15 表面保護フィルム 16 表面保護層 17 弾性隆起体 18 ICチップ 19 ICチップの電極 20 鼓状の半田バンプ DESCRIPTION OF SYMBOLS 1 Semiconductor device 2 Mounting board 3 Heater table 4 Positioning stage 5 Mounting nozzle 6 Linear motor 7 Position sensor 8 Controller 11 Insulation base material 12 Circuit wiring pattern 13 Solder bump for connection 14 Adhesive 15 Surface protection film 16 Surface protection layer 17 Elastic bump Body 18 IC chip 19 IC chip electrode 20 Drum-shaped solder bump
Claims (6)
フリップチップ実装する半導体製造装置であって、 前記半導体部品の接合面を前記実装基板の実装面に対向
させた状態で保持する保持部と、 前記半導体部品を前記実装基板に搭載する方向に前記保
持部を移動するアクチュエータと、 前記保持部の位置を検出する位置センサと、 この位置センサからの位置信号に基づき、前記アクチュ
エータを位置制御する制御部と、 前記半田材を加熱して溶融させる加熱部とを備え、 前記制御部は、前記アクチュエータの駆動電流をあらか
じめ設定された制限値内に制御して、前記保持部を前記
半導体部品と前記実装基板とが半田材を介して接触する
位置に移動し、前記半田材を溶融させて、前記半導体部
品を前記実装基板に接合することを特徴とする半導体製
造装置。1. A semiconductor manufacturing apparatus for flip-chip mounting a semiconductor component on a mounting board via a solder material, wherein the holding section holds the semiconductor component in a state where a bonding surface of the semiconductor component is opposed to a mounting surface of the mounting substrate. An actuator that moves the holding unit in a direction in which the semiconductor component is mounted on the mounting board; a position sensor that detects a position of the holding unit; and position control of the actuator based on a position signal from the position sensor. And a heating unit that heats and melts the solder material, wherein the control unit controls the drive current of the actuator within a preset limit value to set the holding unit to the semiconductor component. And the mounting board is moved to a position where it contacts via a solder material, the solder material is melted, and the semiconductor component is joined to the mounting board. Semiconductor manufacturing equipment.
後、その半田材を押しつぶす方向に前記保持部を所定量
移動し、さらに半田材を引き伸ばす方向に前記保持部を
所定量移動するように前記アクチュエータを駆動制御す
ることを特徴とする請求項1に記載の半導体製造装置。2. The control section, after melting the solder material, moves the holding section by a predetermined amount in a direction to crush the solder material, and further moves the holding section by a predetermined amount in a direction to stretch the solder material. 2. The semiconductor manufacturing apparatus according to claim 1, wherein the driving of the actuator is controlled as described above.
備え、 前記制御部は、この入力された電流値を前記アクチュエ
ータ駆動電流の制限値として駆動制御することを特徴と
する請求項1または2記載の半導体製造装置。3. An input unit for inputting a current value to the control unit, wherein the control unit performs drive control using the input current value as a limit value of the actuator drive current. Or the semiconductor manufacturing apparatus according to 2.
ージ、ボールグリッドアレイ、ウェハレベルパッケージ
のいずれかであることを特徴とする請求項1ないし3の
いずれかに記載された半導体製造装置。4. The semiconductor manufacturing apparatus according to claim 1, wherein said semiconductor component is any one of a chip size package, a ball grid array, and a wafer level package.
フリップチップ実装する半導体製造方法であって、 前記半導体部品の接合面を前記実装基板の実装面に対向
させた状態で保持部に保持する工程と、 前記保持部を移動するためのアクチュエータ駆動電流を
あらかじめ設定された制限値内に制御して、前記保持部
を前記半導体部品と前記実装基板とが半田材を介して接
触する位置に移動する工程と、 前記半田材を溶融させて、前記半導体部品を前記実装基
板に接合する工程とを含むことを特徴とする半導体製造
方法。5. A semiconductor manufacturing method for flip-chip mounting a semiconductor component on a mounting substrate via a solder material, wherein the semiconductor component is held by a holding portion in a state where a bonding surface of the semiconductor component is opposed to a mounting surface of the mounting substrate. And controlling the actuator drive current for moving the holding unit within a preset limit value, so that the holding unit is at a position where the semiconductor component and the mounting board are in contact via a solder material. A method of manufacturing a semiconductor, comprising: a step of moving; and a step of melting the solder material and joining the semiconductor component to the mounting board.
を押しつぶす方向に前記保持部を所定量移動する工程
と、 この押しつぶされた半田材を引き伸ばす方向に前記保持
部を所定量移動する工程とをさらに含むことを特徴とす
る請求項5に記載の半導体製造方法。6. A step of moving the holding portion by a predetermined amount in a direction of crushing the solder material after melting the solder material, and moving the holding portion by a predetermined amount in a direction of stretching the crushed solder material. 6. The method according to claim 5, further comprising the steps of:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000325601A JP2002134563A (en) | 2000-10-25 | 2000-10-25 | Semiconductor manufacturing apparatus and semiconductor manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000325601A JP2002134563A (en) | 2000-10-25 | 2000-10-25 | Semiconductor manufacturing apparatus and semiconductor manufacturing method |
Publications (1)
Publication Number | Publication Date |
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JP2002134563A true JP2002134563A (en) | 2002-05-10 |
Family
ID=18802943
Family Applications (1)
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004319599A (en) * | 2003-04-11 | 2004-11-11 | Japan Aviation Electronics Industry Ltd | Bonding equipment |
US7222773B2 (en) | 2003-05-13 | 2007-05-29 | Olympus Corporation | Semiconductor bonding apparatus |
JP2009517691A (en) * | 2005-11-30 | 2009-04-30 | バイオ−ラッド ラボラトリーズ,インコーポレイティド | Moving coil actuator with expandable range of motion |
-
2000
- 2000-10-25 JP JP2000325601A patent/JP2002134563A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004319599A (en) * | 2003-04-11 | 2004-11-11 | Japan Aviation Electronics Industry Ltd | Bonding equipment |
US7222773B2 (en) | 2003-05-13 | 2007-05-29 | Olympus Corporation | Semiconductor bonding apparatus |
JP2009517691A (en) * | 2005-11-30 | 2009-04-30 | バイオ−ラッド ラボラトリーズ,インコーポレイティド | Moving coil actuator with expandable range of motion |
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