JP2002083564A - Micropart analysis device and analysis method - Google Patents

Abstract

[PROBLEMS] To perform EDX analysis of light elements with high accuracy. SOLUTION: An SEM image and a dark-field STEM image are simultaneously displayed on an electron beam apparatus equipped with an EDX analyzer,
The signal amounts at each pixel of the EM image and the STEM image are compared, and when the difference between the signal amounts is not large, it is determined that the analyte is present on the sample surface, and EDX analysis is performed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a secondary electron image (SE).
The present invention relates to an electron beam apparatus having a function of observing an M image and a scanning transmission electron image (STEM image) and a means for detecting and analyzing characteristic X-rays generated from a sample. The present invention relates to a high-precision minute part analyzer and an analysis method capable of detecting X-rays without being affected by absorption by a sample.

[0002]

2. Description of the Related Art Conventionally, energy dispersive X-rays (energy
transmission electron microscope (TEM) or scanning transmission electron microscope (ST) equipped with an ispersive X-ray (EDX) analyzer
In the case of analyzing a thin film sample by EM), it was considered that the sample was a thin film, and that the sample did not absorb characteristic X-rays. That is, usually, EDX by TEM or STEM
In the analysis, the scanning transmission electron image (STEM) is taken into consideration regardless of whether the object to be analyzed is on the surface on which the electron beam is incident or on the transmitting surface, that is, on the EDX detector side.
Image), the analysis target was irradiated with an electron beam probe, and composition analysis was performed based on the characteristic X-ray intensity generated. Further, when performing EDX analysis only with a scanning electron microscope (SEM), the analysis has been performed regardless of whether the sample is a thin film or a bulk that can transmit electron beams.

[0003]

However, in the above prior art, in the light element having low characteristic X-ray energy, whether the analyte exists on the detector side of the sample or on the opposite side depends on whether the analyte exists on the detector side or on the opposite side. The characteristic X-rays are absorbed by the sample itself, and a sample having the same composition originally results in an apparently different analysis result, which may cause an erroneous judgment. For example, when oxide particles are deposited on a metal thin film, the characteristic X-rays of oxygen have low energy. Therefore, when analyzing the oxide particles on the back side of the metal thin film, that is, on the side opposite to the detector side, the characteristic of oxygen is determined. X-rays are absorbed and reduced from their actual amount. Therefore, it is difficult to quantitatively measure X-rays generated on the low energy side.

In the case of performing EDX analysis only by observing an SEM image, it is possible to confirm whether or not the analyte is on the sample surface, that is, on the side of the EDX detector. Can not be confirmed whether it exists. For this reason, if the analyte is on the surface of the thick sample, the quantitative accuracy may be reduced due to an increase in the background signal due to the scattering of the electron beam in the sample.

SUMMARY OF THE INVENTION An object of the present invention is to provide a high-precision micropart analysis apparatus and an analysis method capable of easily confirming the position of an analyte in a sample with respect to an EDX detector, which has been difficult in the past. is there. Another object of the present invention is to
It is an object of the present invention to provide a high-precision micropart analysis apparatus and an analysis method capable of performing a high-accuracy composition analysis of a light element, which has conventionally been difficult to quantitatively analyze.

[0006]

The object of the present invention is to provide an SEM image and a dark-field transmission image (Dark-Field STEM image / DF-STEM image) or a bright-field transmission image (Bright-field transmission image) using an electron beam apparatus equipped with an EDX analyzer. FieldSTEM image / BF-STEM image), storing and comparing STEM signal amount and SEM signal amount at each pixel of each image, STEM signal amount and SE
This is achieved by providing a function of detecting and displaying a difference in the amount of M signals. Further, the SEM image and the dark-field transmission image or the bright-field transmission image are simultaneously displayed, and a differential image thereof is formed to form the SE image.
This is achieved by providing a function for confirming whether or not the analyte is clearly displayed in both the M image and the STEM image.

That is, the microscopic analyzer according to the present invention includes a means for scanning an electron beam generated from an electron gun on a sample surface, and a method for displaying a secondary electron image formed by secondary electrons generated from the sample. Secondary electron image display means, scanning transmission electron image display means for displaying a scanning transmission electron image formed by the electron beam transmitted through the sample, X-ray analysis means for detecting and analyzing characteristic X-rays generated from the sample, A comparison means is provided for comparing a secondary electron signal amount of a pixel of a secondary electron image corresponding to an analysis designated portion by the X-ray analysis means with a transmission electron signal amount of a pixel of the scanning transmission electron image.

The scanning transmission electron image may be a dark-field scanning transmission electron image or a bright-field scanning transmission electron image, but a dark-field scanning transmission electron image may be more advantageous in terms of contrast. The analysis designated portion may be designated by a point or may be designated by an area having a certain size. Based on the magnitude of the difference between the amount of secondary electron signal and the amount of transmitted electron signal at the position to be analyzed on the sample (specified location for analysis), it is determined whether or not the analyte exists on the secondary electron image observation surface of the sample. It is possible to start the X-ray analysis when the analyte exists on the secondary electron image observation surface, that is, when the analyte exists on the X-ray detector side of the X-ray analysis means. ,
The analysis of the analyte without the influence of the X-ray absorption by the sample becomes possible.

When the difference between the amount of the secondary electron signal and the amount of the transmitted electron signal compared by the comparing means is smaller than a predetermined value, X
It is preferable to configure the apparatus so as to allow the line analysis means to analyze the specified analysis location. This is because, for example, the counting of X-rays by the X-ray analyzing means is started only when the difference between the amount of the secondary electron signal and the amount of the transmitted electron signal compared by the comparing means is smaller than a preset value. This is achieved by configuring a control system so as to control the X-ray measurement by the X-ray analysis means according to the output of the means.

[0010] It is preferable that the apparatus further comprises means for marking a pixel in which the difference between the amount of the secondary electron signal and the amount of the transmitted electron signal compared by the comparing means exceeds a predetermined value. The marking may be performed on the scanning transmission electron image or the secondary electron image. Alternatively, it may be performed for both of them. By marking an object for which it has been found that high-precision X-ray analysis results are not guaranteed, it is possible to avoid a wasteful operation in which the operator repeatedly attempts to analyze the object.

Further, the apparatus is provided with a composition map image display means for displaying a composition map image using a signal from the X-ray analyzer, and a secondary electron which is compared with the composition map image displayed on the composition map image display means by the comparison means. It is preferable that no signal be displayed on pixels where the difference between the signal amount and the scanning electron signal amount exceeds a predetermined value. This makes it possible to accurately grasp the distribution of light element compounds and the like.

The microscopic analyzer according to the present invention also includes means for scanning an electron beam generated from an electron gun on a sample surface, and a secondary image for displaying a secondary electron image formed by secondary electrons generated from the sample. Secondary electron image display means, scanning transmission electron image display means for displaying a scanning transmission electron image formed by the electron beam transmitted through the sample, X-ray analysis means for detecting and analyzing characteristic X-rays generated from the sample, The apparatus is characterized in that it comprises means for forming a differential image of a secondary electron image and a differential image of a scanning transmission electron image in a region surrounding the designated area for analysis by the X-ray analysis means.

The scanning transmission electron image may be a dark-field scanning transmission electron image or a bright-field scanning transmission electron image, but a dark-field scanning transmission electron image may be more advantageous in terms of contrast. By forming the differential image, it is possible to extract the contours of the secondary electron image and the scanning transmission electron image in the vicinity of the designated location, and compare the images displayed in the secondary electron image and the scanning transmission electron image. It can be done easily.

Further, there is provided image comparing means for comparing the differential image of the secondary electron image and the differential image of the scanning transmission electron image, and when the two differential images compared by the image comparing means coincide with each other, the analysis by the X-ray analyzing means is performed. It is preferable to allow analysis of the specified location. When the two differential images compared by the image comparing means match, the analyte is displayed on the secondary electron image and the scanning transmission image, that is, the analyte exists on the X-ray detector side of the sample. Is confirmed.

[0015] In the above-described minute part analyzer, X
It is preferable that a marker indicating a designated place for analysis by the line analyzing means is simultaneously displayed on coordinates corresponding to the designated place for analysis of the secondary electron image display means and the scanning transmission electron image display means. Thus, the operator can easily confirm how the designated analysis location is displayed on the secondary electron image and the scanning transmission electron image.

The analysis method according to the present invention is directed to an analysis method for detecting and analyzing characteristic X-rays generated from an analysis designated portion of a sample by irradiation of an electron beam, wherein the pixel corresponding to the analysis designated portion of a secondary electron image of the sample is analyzed. And the amount of secondary electron signal at
The method is characterized in that a difference between the scanning transmission electron image of the sample and a transmission electron signal amount at a pixel corresponding to the analysis designated portion is detected, and when the difference is smaller than a predetermined value, the analysis designated portion is analyzed.

[0017]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic configuration diagram of an example of a high-precision microscopic analyzer according to the present invention. The mirror body of the electron beam device 1 includes an electron gun 2, a condenser lens 3, and an objective lens 4. Condenser lens 3, Objective lens 4
The scanning coil 5 is disposed between the two, and the sample 6 is inserted below the scanning coil 5. At a position above the sample 6 and below the scanning coil 5, a secondary electron detector 7 is incorporated. The secondary electron detector 7 is connected to the SEM image display CRT 9 via the signal amplifier 8. An annular detector 13 for observing a dark-field STEM image is arranged below the objective lens 4. The annular detector 13 is connected to the STEM image display CRT 11 via the signal amplifier 14. A bright-field STEM image detector 15 is arranged below the annular detector 13. The bright-field STEM image detector 15 is connected to a STEM image display CRT via a signal amplifier 16.
11 is connected. The scanning coil 5 has a scanning power source 10
Are connected, and the scanning power supply 10 is connected to the SEM / STEM
The image display CRTs 9 and 11 and the CPU 12 are connected.

The sample 6 is loaded in a sample holder 17. Above the sample 6, an EDX detector 18 for detecting characteristic X-rays generated from the sample 6 is attached. An analyzer 19 that measures the detected X-ray signal intensity for each energy is connected to the EDX detector 18. The analyzer 19 is connected to the CPU 12. The analyzer 19 has a C for EDX mapping.
RT22 is connected.

The electron beam 20 emitted from the electron gun 2 is converged into a spot on the surface of the sample 6 by the condenser lens 3, and is scanned on the surface of the sample 6 by the scanning coil 5. A saw-tooth wave current flows through the scanning coil 5. The scanning width of the electron beam 20 on the surface of the sample 6 is changed according to the magnitude of the current. The synchronized sawtooth signal is SEM /
It is also sent to the deflection coils of the STEM image display CRTs 9 and 11, and the electron beams of the CRTs 9 and 11 scan each screen to the full. The secondary electron detector 7 detects secondary electrons emitted from the sample 6 by the irradiation of the electron beam 20, and the signal amplifier 8 amplifies the signal, and the signal modulates the luminance modulation of the SEM image display CRT 9. I do. The same applies to the toroidal detector 13, in which electrons (inelastic scattered electrons) scattered from the sample at a certain angle by irradiation with the electron beam 20 are detected, and the signal amplifier 14 amplifies the signal, and the signal amplifies the signal.
Dark field STE by modulating the brightness of the CRT 11 for TEM image display
An M image is displayed. In this case, the image has a contrast reflecting the average atomic number of the sample 6. Similarly, the bright-field STEM image detector 15 detects electrons transmitted through the sample 6, the signal amplifier 16 amplifies the signal, and the signal is used to modulate the brightness of the CTEM 11 for displaying the STEM image, thereby obtaining a bright-field STEM image.
Display a TEM image.

FIG. 2 is a flowchart showing an example of the analysis procedure according to the present invention. First, the SEM image of the sample field including the analyte and the dark-field STEM image are displayed on a C for image display.
The information is simultaneously displayed on the RTs 9 and 11 (S11). Next, an analysis point in the visual field is specified (S12). The specification of the analysis location may be a point specification, or an area having a certain size may be specified. As a result, the analysis target 21 is specified. Subsequently, the analysis location is stored (S13), and SE
The analysis location is displayed on the M-image display CRT 9 (S14).
Next, the CPU 12 stores the signal intensity of the pixel at the analysis location in the SEM image and the signal intensity of the pixel at the analysis location in the STEM image, and determines whether the signal intensities of the two match within a preset range. (S15). If the signal intensity difference between the pixels corresponding to the analysis location is small, the analysis location is an analysis location suitable for EDX analysis, and the process proceeds to step 16 where EDX analysis is performed. SEM image and STEM
If the signal intensity difference between the pixels corresponding to the analysis point of the image is large, the analysis point is not suitable for EDX analysis, and the process returns to step 12 to specify another analysis point. This process is repeated until the EDX analysis for all the analysis points is completed. By specifying a plurality of analysis points in step 12, it is possible to continuously and automatically perform high-precision EDX analysis.

FIG. 3 is an explanatory diagram of an example of a screen for designating an object to be analyzed in step 12. On one screen, for example, on the STEM CRT 11, an analysis target is designated by a pointing device or the like. At this time, a mark 31 such as an arrow is attached to the position of the analysis target. In addition, a mark 32 such as an arrow is displayed at the same coordinates of the SEM CRT 9 that is simultaneously observed. This allows the operator to make sure that the SEM image / STE at the same position is not mistaken.
An M image can be confirmed.

The operation of the high-precision minute part analyzing apparatus shown in FIG. 1 will be described with reference to FIG. FIGS. 4A, 4C, and 4E show display examples of the SEM image and the STEM image displayed on the SEM CRT 9 and the STEM CRT 11, respectively.
(D) and (f) are schematic diagrams respectively showing the state of the sample corresponding to the cases of FIGS. 4 (a), (c) and (e). Hereinafter, the STEM image will be described as a dark-field STEM image, but the situation is almost the same even when a bright-field STEM image is used instead of the dark-field STEM image.

When the difference between the signal intensities of the pixels at the designated coordinates is larger than a certain value, the analysis object 21 can be observed in a SEM image as shown in FIG. An impossible state, or conversely, a state in which observation is possible in a dark-field STEM image but not in an SEM image, as shown in FIG. In the former case, as shown in FIG. 4B, the analysis target is on the SEM detector 7 side, that is, on the EDX detector 18 side, but the entire sample 6 is so thick that the electron beam 20 cannot pass therethrough. On the other hand, in the latter case,
As shown in FIG. 4D, the sample 6 is thin enough to transmit the electron beam 20, but the analyte is not on the EDX detector 18 side. For example, when the oxide particles such as SiO ₂ are attached to the heavy metal in the sample 6 and it is desired to investigate the fluctuation of the distribution and composition of the SiO ₂ particles, in the case of the former FIG. A large amount of X-rays enter the detector 18 and the background increases, so that high-precision EDX analysis cannot be performed. In the latter case of FIG. 4 (d), the SiO ₂ O
Since the characteristic X-ray has low energy, it is absorbed by heavy metal, and only Si is detected, and the accuracy is lowered.

When the difference between the signal intensities at the designated coordinates is larger than a certain value, high-precision EDX analysis is impossible, and the CPU 12 instructs the analyzer 19 to stop the analysis. The analyzer 19 stops the analysis in response to the instruction from the CPU 12, that is, stops counting the X-rays.

At this time, an instruction may be given to make a mark on the display screens 9 and 11, so that the object is excluded from the analysis target at the next analysis. FIG. 5 is a schematic diagram showing an example of this marking. In the example shown,
SEM displayed on CRT 11 for STEM image display
By attaching marks 41, 42, and 43 such as a cross mark to the analysis target 21 that is not displayed on the image display CRT 9, it is possible to prevent the operator from trying the analysis of the analysis target 21 twice. Since the analytes are not regularly arranged on the sample and are distributed at random, the operator must try to analyze the same position again even if the analyte is once determined to be out of the analyte. There is. Therefore, marking an object that is determined to be out of the analysis target of the EDX analysis is useful for eliminating unnecessary operations and improving the analysis efficiency.

Returning to FIG. 4, when the difference between the signal intensities at the designated coordinates is smaller than a certain value, the object to be analyzed can be observed in the SEM image and the dark field STEM image as shown in FIG. In this case, as shown in FIG. 4 (f), the analyte is on the EDX detector 18 side of the sample 6 and the sample 6
Is thin enough to transmit the electron beam 20 and is considered to have little influence of scattering of the electron beam in the sample.
Instructs the analyzer 19 to start the analysis. The analyzer 19 receives the instruction from the CPU 12 and starts the analysis.

FIG. 6 is an explanatory diagram showing an example of the EDX analysis result according to the present invention. In the EDX analysis, a characteristic X generated when a sample is irradiated with an electron beam focused to a diameter of several nm or less is obtained.
The line is received by a semiconductor detector and converts the signal strength to be proportional to the energy of the incident X-ray. FIGS. 6A and 6B
, The data is plotted as signal strength for each energy value. The EDX mapping image detects a signal at the same time as the electron beam scans on the sample surface, and illuminates the EDX mapping CRT 22 synchronized with the scanning image CRT only when an X-ray having a certain energy width is detected.

FIG. 6C is a schematic diagram showing the relationship between the sample and the analytes A and B. The analysis target is SiO ₂ catalyst fine particles, and the analysis target A is the EDX detector 18 of the sample 6.
It is assumed that the analyte A exists on the sample surface on the side opposite to the EDX detector 18. FIG. 6 described above.
(A) is an analysis result of the analyte A shown in FIG.
FIG. 6B shows an analysis result of the analysis target B shown in FIG. 6C.

FIGS. 6D and 6E show examples of EDX mapping images of oxygen O of the analytes A and B. FIG. Analyte A exists on the front surface of the sample, and B exists on the back surface of the sample. Therefore, as shown in FIGS. 6A and 6B, the oxygen O from the analyte A is detected with higher intensity than the oxygen O of the analyte B. When this EDX mapping is performed by a normal method, as shown in FIG. 6D, a signal is detected regardless of the sample position (the front surface and the back surface of the sample). There is a possibility that the two analytes A and B may be confused if they have composition fluctuations. On the other hand, in the present invention, as shown in FIG.
Since only the analyte A present on the surface is detected, the distribution state and composition of the analyte on the sample surface can be correctly grasped.

In the above embodiment, the SEM image and the STEM
In comparing the images, we detected the difference in the signal amount of each pixel,
Instead of comparing the signal amounts of the SEM image and the STEM image,
The EM image and the STEM image may be converted into a differential image, binarized, and compared with an image in which the edge of the analysis target is emphasized.
FIG. 7 is a flowchart illustrating an example of an operation procedure when comparing images in which edges of an analysis target are emphasized.

First, the S of the analysis field including the object to be analyzed is
The EM image and the STEM image are displayed simultaneously (S21). Next, the operator designates the analysis target 21 and a region including the analysis target 21 on the STEM image display CRT 11 (S22). The CPU 12 stores the coordinates and area of the analysis target (S23). CPU 12 is a SEM
The designated analysis location is also displayed on the image display CRT 9 (S24). Next, the CPU 12 converts the SEM image and the STEM image of the designated area into differential images (S2
5), binarizing each differential image (S26).

Next, the CPU 12 compares each pixel of the differentiated SEM image and each pixel of the STEM image, and determines whether the edges of the object to be analyzed match in both images (S27). If they match, the analysis is started because the analyte exists on the EDX detector 18 side, and if they do not match, the analysis is not performed and the process moves to the next area. Also, in the case of a match in the determination of step 27, following step 27, step 1 of FIG.
As shown in FIG. 5, the SEM image and S
A step of comparing the signal intensity of the TEM image may be added. By specifying a plurality of analytes and a region including the analytes in step 22, highly accurate EDX analysis can be continuously and automatically performed.

In the above embodiment, a dark-field STEM image is used as the STEM image, but a bright-field STEM image may be used instead of the dark-field STEM image. Further, in the above embodiment, the SEM image and the STEM image are observed one by one on separate screens 9 and 11, but the SEM image and the STEM image are observed on the same screen.
Means for switching the display of images, storing the images, and comparing the differential images may be provided. In the above embodiment, the CPU is compared. However, in the two types of image display screens 9 and 11, the analysis position marker is displayed at the same coordinate on both screens at the same time, and the operator can display the two positions on the two screens. The EDX analysis may be started after confirming the image of the analysis target by confirming that the analysis target is displayed on both screens.

[0034]

According to the present invention, it becomes possible to analyze light elements contained in minute portions of a sample with high accuracy without absorption of characteristic X-rays by the sample.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram of an example of a high-precision microscopic analyzer according to the present invention.

FIG. 2 is a flowchart showing an example of an analysis procedure according to the present invention.

FIG. 3 is an explanatory diagram of an example of a screen for specifying an object to be analyzed.

FIG. 4 is a diagram for explaining the operation of the high-precision minute part analyzing apparatus according to the present invention.

FIG. 5 is a schematic diagram showing an example of marking on an analysis target to be excluded from the analysis target.

FIG. 6 is an explanatory view showing an example of an EDX analysis result according to the present invention.

FIG. 7 is a flowchart illustrating an example of an operation procedure when comparing images in which an edge of an analysis target is emphasized;

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Electron beam device, 2 ... Electron gun, 3 ... Condenser lens, 4 ... Objective lens, 5 ... Scan coil, 6 ... Sample, 7 ...
Secondary electron detector, 8: signal amplifier, 9: CRT for displaying SEM image, 10: scanning power supply, 11: CR for displaying STEM image
T, 12 CPU, 13 annular detector, 14 signal amplifier, 15 bright-field STEM image detector, 16 signal amplifier, 17 sample holder, 18 EDX detector, 19 analyzer, 20 electronics Line, 21 ... analyte, 22 ...
CRT for EDX mapping

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01J 37/28 H01J 37/28 B (72) Inventor Takeo Ueno 1040 Ichige Ichige, Hitachinaka City, Ibaraki Pref. Hitachi Science Systems, Inc. (72) Inventor Takahito Hashimoto 882-Chair, Oji-shi, Hitachinaka-shi, Ibaraki Prefecture F-term in the Hitachi Measuring Instruments Group (reference) 2G001 AA03 BA05 BA07 BA11 BA30 CA03 DA02 DA06 DA10 EA03 FA06 GA04 GA06 HA13 JA11 JA13 JA16 KA01 5C033 PP05 PP06 SS04 SS07 UU04 UU05 UU06

Claims (8)

[Claims] 1. A means for scanning an electron beam generated from an electron gun on a sample surface, a secondary electron image display means for displaying a secondary electron image formed by secondary electrons generated from the sample,
Scanning transmission electron image display means for displaying a scanning transmission electron image formed by the electron beam transmitted through the sample, X-ray analysis means for detecting and analyzing characteristic X-rays generated from the sample, and analysis by the X-ray analysis means A minute part analyzing apparatus, comprising: comparing means for comparing a secondary electron signal amount of a pixel of the secondary electron image corresponding to a designated portion with a transmission electron signal amount of a pixel of the scanning transmission electron image. 2. The micro analyzer according to claim 1, wherein the difference between the amount of the secondary electron signal and the amount of the transmitted electron signal compared by the comparing means is smaller than a predetermined value.
A minute part analyzing apparatus, wherein analysis of the designated analysis part by a line analyzing means is permitted. 3. The microscopic analyzer according to claim 1, wherein the difference between the amount of the secondary electron signal and the amount of the transmitted electron signal compared by the comparing means exceeds a predetermined value. A micropart analysis device comprising: 4. The microanalyzer according to claim 1, further comprising a composition map image display means for displaying a composition map image using a signal from the X-ray analyzer, wherein the composition map image display is performed. A pixel in which the difference between the amount of the secondary electron signal and the amount of the scanning electron signal compared by the comparing means in the composition map image displayed on the means exceeds a predetermined value, the signal is not displayed. Part analyzer. 5. A means for scanning an electron beam generated from an electron gun on a sample surface, a secondary electron image display means for displaying a secondary electron image formed by secondary electrons generated from the sample,
Scanning transmission electron image display means for displaying a scanning transmission electron image formed by the electron beam transmitted through the sample, X-ray analysis means for detecting and analyzing characteristic X-rays generated from the sample, and analysis by the X-ray analysis means A minute part analyzer comprising: means for forming a differential image of the secondary electron image and a differential image of the scanning transmission electron image in a region surrounding a designated portion. 6. The microscopic analyzer according to claim 5, further comprising image comparing means for comparing a differential image of the secondary electron image with a differential image of the scanning transmission electron image, wherein the comparison is performed by the image comparing means. A micropart analysis apparatus, wherein when the two differential images coincide with each other, analysis of the specified analysis location by the X-ray analysis means is permitted. 7. The microanalyzer according to claim 1, wherein a marker indicating a designated portion to be analyzed by the X-ray analysis means is displayed on the secondary electron image display means and the scanning transmission electron image display. A minute part analyzing device for simultaneously displaying the coordinates corresponding to the analysis designated portion of the means. 8. An analysis method for detecting and analyzing characteristic X-rays generated from an analysis designated portion of a sample by irradiation of an electron beam, wherein the secondary electrons in a pixel corresponding to the designated analysis portion of a secondary electron image of the sample Detecting a difference between a signal amount and a transmitted electron signal amount at a pixel corresponding to the analysis designated portion of the scanning transmission electron image of the sample, and analyzing the analysis designated portion when the difference is smaller than a predetermined value; An analysis method characterized by the following.