JP2002009220A - Resin-sealed semiconductor device - Google Patents

Abstract

(57) Abstract: In a resin-encapsulated semiconductor device using a heat radiating substrate, peeling of a mold resin from a surface of the heat radiating substrate to which a semiconductor chip is bonded is prevented. In addition, it is possible to prevent heat radiation characteristics from being deteriorated due to cracks generated in the adhesive for bonding the semiconductor chip to the heat radiation substrate. A heat dissipation board having high thermal conductivity, a semiconductor chip adhered to one main surface (surface) of the heat dissipation board using an adhesive, a lead connected to an external electrode of the semiconductor chip, A conductive member that connects an external electrode and a lead of the semiconductor chip; and a sealing resin that seals the semiconductor chip and the lead, and the conductive member, and faces a surface of the heat dissipation substrate to which the semiconductor chip is bonded. In the resin-encapsulated semiconductor device having the exposed surface (back surface) exposed, the heat radiating substrate extends in the direction from the surface of the heat radiating substrate to the semiconductor chip along all sides of the surface facing in two or four directions. This is a resin-encapsulated semiconductor device provided with a protruding plate-shaped projection.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-encapsulated semiconductor device, and more particularly to a technique effective when applied to a semiconductor device in which a substrate to which a semiconductor chip is bonded is exposed to the outside of a sealing resin for heat dissipation. Things.

[0002]

2. Description of the Related Art Conventionally, a semiconductor chip used in a semiconductor device used for an in-vehicle power supply or an IC (Integrated Circuit) of a motor driver system has a large power consumption.
The calorific value is large. The semiconductor chip having a large calorific value is:
Since the temperature inside the semiconductor device is likely to be high, it is necessary to efficiently release the heat generated from the semiconductor chip to the outside to prevent overheating. Therefore, in a semiconductor device using a semiconductor chip that generates a large amount of heat,
As shown in (a), a substrate (die pad) 1 to which the semiconductor chip 3 is bonded is made of a material having high thermal conductivity such as copper (Cu), and heat generated from the semiconductor chip 3 is
Conduction is conducted to the substrate 1 through an adhesive 2 such as solder, and the surface 1B of the substrate 1 on the back side of the surface 1A to which the semiconductor chip 3 is adhered is exposed to the outside of the mold resin 6 to form the semiconductor chip. 3 can be efficiently radiated.

A heat dissipation substrate (hereinafter, referred to as a heat dissipation substrate) 1 to which the semiconductor chip 3 is adhered has low adhesiveness to the mold resin 6 and the mold resin 6 is easily peeled off. When the interface between the heat radiating substrate 1 and the mold resin 6 is peeled off, the heat radiating substrate 1 is likely to fall off, and the moisture resistance is likely to be reduced due to the intrusion of moisture from the peeled portion. Therefore, in the conventional resin-encapsulated semiconductor device using the heat-radiating substrate 1, as shown in FIG. In addition to preventing peeling and falling off of the heat radiation substrate 1, the moisture resistance is improved.

[0004]

However, in the prior art, the resin fixing protrusions 1F formed on the side surfaces of the heat radiating substrate 1 firmly fix the side surfaces of the heat radiating substrate 1 to the mold resin 6. And the molding resin 6
When the mold resin 6 on the surface 1A of the heat dissipation board 1 to which the semiconductor chip 3 is adhered peels off due to a steam explosion caused by a reflow process or the like in an assembling process of the semiconductor device. The shear stress generated between the surface of the heat dissipation substrate 1 and the mold resin 6 cannot be avoided. In other words, when the mold resin 6 on the surface 1A of the heat dissipation board 1 is peeled off, FIG.
Mold resin 6 during temperature cycle as shown in FIG.
The stress F5 at the time of expansion and contraction of the
A cannot relax the stress, and the stress F5 is directly applied to the semiconductor chip 3. As a result, as shown in FIG. 10B, a high stress F5 is applied to the adhesive 2 such as solder, which bonds the semiconductor chip 3 to the heat dissipation board 1, and a crack 15 is generated in the adhesive 2. . When the crack 15 generated in the adhesive 2 becomes large, the heat radiation path from the semiconductor chip 3 to the heat radiation substrate 1 is cut off, and the heat generated in the semiconductor chip 3 accumulates inside the semiconductor device, and the inside of the semiconductor device However, there has been a problem that the temperature of the semiconductor chip becomes high, the semiconductor chip 3 is overheated, and the semiconductor device breaks down.

An object of the present invention is to provide a technique in a resin-encapsulated semiconductor device using a heat-radiating substrate, which can prevent the mold resin from peeling off from the surface of the heat-radiating substrate to which the semiconductor chip is bonded. is there. Another object of the present invention is to provide a technique in a resin-encapsulated semiconductor device using a heat radiating substrate, which can prevent a decrease in heat radiating characteristics due to a crack generated in an adhesive bonding a semiconductor chip to the heat radiating substrate. It is in. The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0006]

The summary of the invention disclosed in the present application is as follows. (1) a heat-dissipating substrate having high thermal conductivity, a semiconductor chip adhered to one main surface (surface) of the heat-dissipating substrate with an adhesive, a lead connected to an external electrode of the semiconductor chip, and the semiconductor A conductive member for connecting an external electrode and a lead of the chip; a sealing resin for sealing the semiconductor chip and the lead; and the conductive member, and facing a surface of the heat dissipation substrate to which the semiconductor chip is bonded; In the resin-encapsulated semiconductor device having an exposed surface (back surface), the heat dissipation board projects from the front surface of the heat dissipation board in the direction of the semiconductor chip along all sides of the front surface facing in two or four directions. This is a resin-encapsulated semiconductor device provided with plate-shaped protrusions. (2) In the resin-encapsulated semiconductor device of (1), notches are provided at predetermined intervals at the tips of the protrusions. (3) In the resin-encapsulated semiconductor device according to (1) or (2), the height from the surface of the heat radiating substrate to the tip of the protrusion is equal to the height of the semiconductor chip adhered on the heat radiating substrate. equal.

According to the resin-encapsulated semiconductor device of the above (1), each side of the surface (surface) of the heat dissipation substrate to which the semiconductor chip is adhered is attached to the semiconductor chip from the surface of the heat dissipation substrate. By providing the protrusion protruding in the direction, the resin in the surface direction of the heat radiating substrate is caught by the protrusion and the fixing force of the resin is strengthened, so that the resin on the surface of the heat radiating substrate can be prevented from peeling.

In addition, by providing a projection protruding from the surface of the heat dissipation substrate in the direction of the semiconductor chip, a shear stress acting when the resin in the side direction of the semiconductor chip expands and contracts is reduced by the projection. Therefore, the stress applied to the side surface of the semiconductor chip can be reduced. Therefore, the load on the adhesive for bonding the semiconductor chip and the heat radiating substrate is reduced, and the heat radiating path is cut off due to the occurrence of cracks in the adhesive, thereby preventing the heat radiating characteristics from being deteriorated.

When a projection is provided on the surface of the heat-radiating substrate, the resin can be prevented from peeling off due to shear stress in a direction perpendicular to the side where the projection extends, but a resistance to shear stress in a parallel direction can be prevented. But weak and easy to peel off. Although the stress in the direction perpendicular to the side on which the protrusion extends can be reduced, the stress acting in the direction parallel to the side on which the protrusion extends is hardly reduced. If the resin is applied to the side surface of the semiconductor chip without relaxing the stress due to expansion and contraction in the direction parallel to the side where the protrusion extends, the adhesive may crack. Therefore, by providing notches at predetermined intervals at the tips of the projections provided on the surface of the heat dissipation board as in the means of (2), the resin is caught by the tips of the projections, and the projections extend. The resin can be prevented from sliding in a direction parallel to the existing direction, and the fixing force of the resin can be enhanced.

[0010] The protrusion provided on the surface of the heat dissipation board,
With a certain height, the stress received by the expansion and contraction of the resin on the side surface of the semiconductor chip can be reduced, but the height of the protrusion is bonded to the heat dissipation substrate as in the means of (3). It is most effective to set the same height as the height of the semiconductor chip. By making the heights of the protrusions and the semiconductor chip uniform, the stress applied to the side surface of the semiconductor chip can be reduced uniformly.

Hereinafter, the present invention will be described in detail together with embodiments (examples) with reference to the drawings. In all the drawings for explaining the embodiments, parts having the same function are denoted by the same reference numerals, and their repeated description will be omitted.

[0012]

(Embodiment 1) FIGS. 1 and 2 are schematic views showing a schematic configuration of a resin-encapsulated semiconductor device according to Embodiment 1 of the present invention. FIG. FIG. 2A is a schematic plan view of the device, FIG. 2A is a cross-sectional view taken along line AA ′ of FIG.
FIG. 2B is an enlarged schematic view of a side portion of the heat dissipation board of FIG.
FIG. 2C is a cross-sectional view taken along line BB ′ of FIG.

In FIG. 1, reference numeral 1 denotes a heat dissipation substrate, 1A denotes a semiconductor chip bonding surface (front surface), 1B denotes an exposed surface (back surface), and 1C.
Is a projection for reducing stress, 1D is a cutout, 1E is a V-shaped groove,
2 is an adhesive, 3 is a semiconductor chip, 4 is a lead, 5 is a bonding wire, and 6 is a molding resin.

As shown in FIGS. 1 and 2A, a resin-sealed semiconductor device according to a first embodiment of the present invention includes a heat-dissipating substrate 1 to which a semiconductor chip is bonded, and one principal surface (front surface) of the heat-dissipating substrate 1. 1A
A semiconductor chip 3 bonded to the semiconductor chip 3 by an adhesive 2, a lead 4 connected to an external electrode 3A of the semiconductor chip 3,
Bonding wires 5 for electrically connecting the external electrodes 3A of the semiconductor chip 3 to the leads 4, the heat dissipation board 1, the semiconductor chip 3, the leads 4, and the bonding wires 5;
Is formed by a mold resin 6 that seals the resin. Further, a surface (back surface) 1B of the heat dissipation substrate 1 facing the front surface 1A to which the semiconductor chip 3 is adhered, as shown in FIG. 2 (a), efficiently radiates heat generated in the semiconductor chip 3. And is exposed from the mold resin 6.

Further, the heat dissipation board 1 is made up of FIGS.
As shown in (a), plate-like stress-reducing projections 1C are provided from the surface 1A of the heat dissipation substrate 1 toward the semiconductor chip 3 along two sides of the surface 1A in two opposite directions. . The stress-reducing projections 1C are used for the stress applied to the semiconductor chip 3 when the mold resin 6 on the side surface of the semiconductor chip 3 expands and contracts in the x direction, and for the surface 1A of the heat dissipation substrate 1 and the mold resin 6. It has the function of alleviating the interposed shear stress.

As shown in FIG. 2B, cutouts 1D are formed at predetermined intervals in the stress-reducing projection 1C. The notch 1D has a function of preventing the mold resin 6 from slipping in the y direction and making it difficult for the mold resin 6 on the surface 1A of the heat dissipation board 1 to come off.

As shown in FIG. 2C, a V-shaped groove 1E is formed on the surface 1A of the heat dissipation board 1 in two directions different from the two sides on which the stress reducing projections 1C are provided. Is provided. The V-shaped groove 1E has a function of reducing the slip of the mold resin 6 in the y direction, like the notch 1D formed in the stress reducing projection 1C.

FIGS. 3 to 6 are schematic views for explaining a method of manufacturing the resin-sealed semiconductor device of this embodiment. 3 to 6, reference numeral 7 denotes an odd-shaped member, 7 'denotes a lead frame, 7A denotes a protruding portion, 7B denotes a lead portion, 8 denotes a suspension lead, and 9 denotes a tie bar.

In the resin-encapsulated semiconductor device of this embodiment, a lead frame previously processed into a predetermined shape by the following procedure is used. First, copper (C
u) is rolled, and as shown in FIGS. 3 (a) and 3 (b), an irregularly shaped material 7 having different thicknesses is formed between the protruding portion 7A used as a heat dissipation substrate and the portion 7B serving as a lead.

Next, the irregularly shaped material 7 is pressed and etched, and as shown in FIGS. 4A and 4B, the heat radiating substrate 1 supported by the suspension leads 8 and the dam bar 9 are integrally formed. It is processed into a lead frame 7 ′ in which a portion to be the supported lead 4 is formed. At this time, of the side surfaces of the heat radiation substrate 1, a portion serving as a stress reducing projection 1 </ b> C is also formed on a side surface portion facing the leads 4. Further, at the tip of the stress reducing projection 1C, a groove serving as the notch 1D is formed at the same interval as the interval between the leads 4.

Next, by bending the lead frame 7 ', as shown in FIGS. 5A and 5B, the height of the heat radiating substrate 1 and the lead 4 are changed, and The stress-reducing projection 1C protruding from the side surface of the substrate 1 is bent in the direction of the surface 1A to which the semiconductor chip is bonded. Here, it is ideal that the bending angle of the projection 1C is 90 degrees, and the projection is processed so as to be perpendicular to the surface of the heat dissipation board 1. However, it is difficult to bend it to 90 degrees in practice. As shown in FIG. 5B, the angle ranges from 45 degrees to 90 degrees. The resin-encapsulated semiconductor device of this embodiment is manufactured using the lead frame 7 'manufactured according to the above steps.

As shown in FIG. 6A, the semiconductor chip 3 is formed on the surface 1A of the heat dissipation board 1 of the lead frame 7 'formed according to the above-mentioned procedure using an adhesive 2 such as solder.
Glue. Next, as shown in FIG. 6B, the external electrodes 3A of the semiconductor chip 3 and the leads 4 are connected by bonding wires 5, and the heat dissipation substrate 1, the semiconductor chip 3, the leads 4, and the bonding wires 5 are molded. Resin 6
Seal with.

Thereafter, the ends of the leads 4 are cut off to separate the semiconductor device from the lead frame 7 ', and the dam bar 9 integrally supporting the leads 4 is cut.
Thereafter, the portion (outer lead) of the lead 4 protruding from the mold resin 6 is bent into, for example, a gull wing shape, whereby the resin-encapsulated semiconductor device of this embodiment as shown in FIG. it can.

FIG. 7 is a diagram for explaining the operation and effect of the resin-encapsulated semiconductor device of this embodiment. In the resin-encapsulated semiconductor device of this embodiment, as shown in FIG. 2A, the direction of the semiconductor chip 3 from two opposing sides of the surface 1A of the heat dissipation substrate 1 to which the semiconductor chip 3 is bonded. Is provided with a projection 1C for reducing stress. Since the stress-reducing projections 1C are provided so as to bisect the mold resin 6 in the side surface direction of the semiconductor chip 3, when the mold resin 6 on the side surface of the semiconductor chip 3 expands and contracts due to a temperature cycle. In addition, part of the stress acting in the x direction can be reduced. Further, the projections 1C for reducing stress are used.
7A, the stress in the x direction of the mold resin 6 on the side surface of the semiconductor chip 3 is reduced by the stress F3 between the protrusion 1C and the semiconductor chip 3, and the outside of the protrusion 1C, as shown in FIG. Stress F4. Therefore, the shear stress acting between the surface 1A of the heat dissipation board 1 and the mold resin 6 acting in the x direction is reduced,
Peeling of the mold resin 6 can be reduced.

Further, by providing the stress reducing projections, the shear stress is relaxed and the surface 1 of the heat dissipation board 1 is reduced.
A and the mold resin 6 are prevented from peeling off, and the load on the adhesive 2 that bonds the heat dissipation substrate 1 and the semiconductor chip 3 is also reduced, so that the adhesive 2 is cracked or the semiconductor chip 3 Prevents peeling. From the above, a crack is generated in the adhesive 2 and the heat radiation path from the semiconductor chip 3 to the heat radiation substrate 1 is blocked, so that heat is prevented from accumulating inside the semiconductor device and overheating. Heat dissipation characteristics and reliability can be improved.

The height h of the stress reducing projection 1C
As shown in FIG. 7B, the surface 1 of the heat dissipation board 1 is
When the height from A to the surface on which the external electrodes 3A of the semiconductor chip 3 are formed is equal, the stress applied to the side surface of the semiconductor chip 3 due to expansion and contraction of the molding resin 6 can be reduced uniformly. Therefore, the addition of the adhesive 2 for bonding the semiconductor chip 3 can be reduced most efficiently, and the effect of preventing the adhesive from cracking becomes large.

As described above, according to this embodiment,
By providing a plate-shaped projection protruding from the surface toward the semiconductor chip on the surface (front surface) of the heat dissipation substrate to which the semiconductor chip is bonded, shearing that acts when the mold resin on the side surface of the semiconductor chip expands and contracts. The stress is relieved, and the surface of the heat dissipation board and the mold resin can be prevented from peeling off. In addition, the stress applied to the side surface of the semiconductor chip can be reduced to prevent cracks and breakage of the adhesive for bonding the semiconductor chip and the heat dissipation substrate, thereby improving heat dissipation characteristics.

(Embodiment 2) FIG. 8 is a schematic diagram showing a schematic configuration of a resin-encapsulated semiconductor device according to Embodiment 2 of the present invention. FIG. 8A is a schematic plan view of the resin-encapsulated semiconductor device. Figure,
FIG. 8B is a cross-sectional view taken along line FF ′ of FIG.

In FIG. 8, 2 is an adhesive, 4 is a lead,
5 is a bonding wire, 6 is a mold resin, 10 is a heat dissipation substrate, 10A is a semiconductor chip bonding surface (surface), 10B
Is an exposed surface, 10C is a projection for reducing stress, 10D is a cutout, 11 is a suspension lead, 12 is a semiconductor chip, and 12A is an external electrode.

The semiconductor device according to the second embodiment is a QFP type semiconductor device having leads in four directions.
As shown in FIG. 8B, a heat radiating substrate 10 for bonding a semiconductor chip, a semiconductor chip 12 bonded to a surface 10A of the heat radiating substrate 10 with an adhesive 2, and an external electrode 12A of the semiconductor chip 12 A lead 4 to be connected;
The external electrodes 12A of the semiconductor chip 12 and the leads 4
And a molding resin 6 for sealing the heat radiating substrate 10, the semiconductor chip 12, the leads 4, and the bonding wires 5.
The semiconductor device according to the second embodiment is the same as the semiconductor device according to the first embodiment, and as shown in FIG.
The surface (back surface) 10B facing the surface to which the semiconductor chip 12 is adhered is exposed from the mold resin 6.

In the semiconductor device of the second embodiment,
As shown in (a), the suspension leads 1 are provided on the heat dissipation board 10 from four corners toward the corners of the mold resin 6.
The protrusions 10C for reducing stress as described in the first embodiment are provided on four sides of the surface 10A of the heat dissipation board 10 facing the leads 4. Also,
A notch 10D is formed at the tip of the stress reducing projection 10C.
Is provided.

FIG. 9 is a schematic diagram showing a schematic configuration of a lead frame used in the resin-encapsulated semiconductor device of the second embodiment. FIG. 9A is a schematic plan view of the lead frame.
FIG. 9B is a schematic front view of FIG. 9 (a) and 9 (b), 13 is a lead frame, 13A
Is a fixing portion, and 14 is a fixing member.

In the first embodiment, since the external electrodes 3A of the semiconductor chip 3 adhered to the heat radiating substrate are formed along two opposing sides, the leads 4 of the lead frame 7 'also have the external electrodes. It is formed only in the direction facing the formed two sides. Therefore, as shown in FIG. 3, the lead frame 7 'can be formed by one plate using the irregularly shaped members 7 having partially different thicknesses. However, when the external electrodes 12A are formed along all four sides as in the semiconductor chip 12 of the second embodiment, the leads 4 are formed in four directions as shown in FIG. Since the lead frame 13 must be used, the lead frame cannot be formed using the deformed material 7 as shown in FIG.

In the case of a semiconductor device in which leads 4 are provided in four directions as in the resin-sealed semiconductor device of the second embodiment, as shown in FIGS. 9 (a) and 9 (b), Lead 4
A lead frame 13 in which only the lead frame 13 is formed and a heat radiating board 10 in which the hanging leads 11 are provided in the corners are formed in different procedures, respectively. Is connected to a fixing portion 13A provided on the lead frame 13 by a fixing member 14 such as a gold bump. The processing of the stress reducing protrusions 1C provided in the four directions of the heat dissipation board 10 is formed and processed before connecting to the lead frame 13.

After the lead frame as shown in FIGS. 9A and 9B is prepared in advance, the bonding of the semiconductor chip 12, the wire bonding, and the sealing with the molding resin 6 are performed in the above-described embodiment. Since the procedure is the same as the procedure described in 1 or the conventional procedure, the description is omitted.

In the QFP type semiconductor device of the second embodiment,
The stress-reducing projections 1C can be provided in four directions of the heat dissipation substrate 10. Therefore, the effect of reducing the stress due to the expansion and contraction of the mold resin 6 as described in the first embodiment can be obtained in both the x direction and the y direction. The adhesive 2 can be prevented from peeling and cracking.

As described above, the present invention has been specifically described based on the above-described embodiment. However, the present invention is not limited to the above-described embodiment, and may be variously modified without departing from the gist thereof. Of course.

[0038]

Advantageous effects obtained by typical ones of the inventions disclosed in the present application will be briefly described.
It is as follows. (1) In a resin-sealed semiconductor device using a heat radiating substrate, peeling of the mold resin from the surface of the heat radiating substrate to which the semiconductor chip is bonded can be prevented. (2) In a resin-encapsulated semiconductor device using a heat radiating substrate, a decrease in heat radiating characteristics due to a crack generated in an adhesive bonding a semiconductor chip to the heat radiating substrate can be prevented.

[Brief description of the drawings]

FIG. 1 is a schematic plan view illustrating a schematic configuration of a resin-sealed semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a schematic cross-sectional view and a partially enlarged schematic view illustrating a schematic configuration of a resin-sealed semiconductor device according to a first embodiment.

FIG. 3 is a schematic plan view and a cross-sectional view illustrating a method for manufacturing a lead frame used in the resin-encapsulated semiconductor device of Example 1;

FIG. 4 is a schematic plan view and a cross-sectional view illustrating a method for manufacturing a lead frame used in the resin-sealed semiconductor device of the first embodiment.

5A and 5B are a schematic plan view and a cross-sectional view illustrating a method for manufacturing a lead frame used in the resin-encapsulated semiconductor device according to the first embodiment.

FIG. 6 is a schematic cross-sectional view for explaining the method for manufacturing the resin-sealed semiconductor device of the first embodiment.

FIG. 7 is a schematic diagram for explaining the function and effect of the resin-sealed semiconductor device of the first embodiment.

FIG. 8 is a schematic plan view and a cross-sectional view illustrating a schematic configuration of a resin-sealed semiconductor device according to a second embodiment of the present invention.

FIG. 9 is a schematic plan view and a cross-sectional view illustrating a schematic configuration of a lead frame used in the resin-sealed semiconductor device of the second embodiment.

FIG. 10 is a schematic diagram showing a schematic configuration and problems of a conventional resin-encapsulated semiconductor device.

[Explanation of symbols]

1, 10: heat dissipation board, 1A, 10A: semiconductor chip bonding surface (front surface) 1B, 10B: exposed surface (back surface), 1C, 10
C: projection for reducing stress, 1D, 10D: notch, 1E
... V-shaped groove, 2 ... adhesive, 3,12 ... semiconductor chip, 4 ...
Lead, 5: bonding wire, 6: mold resin,
Reference numeral 7: deformed material, 7 ', 13: lead frame, 7A: projecting portion, 7B: lead portion, 8, 11: suspension lead, 9
... dam bar, 13A ... fixed part, 14 ... fixed member.

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Shinya Koike 5-2-1, Kamimizuhoncho, Kodaira-shi, Tokyo F-term within the Hitachi Semiconductor Group 4M109 AA01 BA01 CA21 DB02 FA02 FA03 FA04 GA05 5F067 AA03 AA04 AB02 AB03 BD02 BD05 BE01 BE04 BE07 BE08 CA03 CA07 DA05 DA16 EA04

Claims (3)

[Claims] A heat-dissipating substrate having high thermal conductivity, a semiconductor chip adhered to one main surface (surface) of the heat-dissipating substrate using an adhesive, and a lead connected to an external electrode of the semiconductor chip. A conductive member for connecting an external electrode and a lead of the semiconductor chip, and the semiconductor chip and the lead, and a sealing resin formed by sealing the conductive member; and a surface of the heat dissipation substrate to which the semiconductor chip is bonded. In the resin-encapsulated semiconductor device in which the facing surface (back surface) is exposed, the heat radiating substrate extends in a direction from the surface of the heat radiating substrate to the semiconductor chip along all sides of the front surface in two or four opposite directions. A resin-encapsulated semiconductor device, characterized in that a plate-shaped projection protruding from the semiconductor device is provided. 2. The resin-sealed semiconductor device according to claim 1, wherein a notch is provided at a predetermined interval at a tip of said projection. 3. The resin-encapsulated semiconductor device according to claim 1, wherein a height from a surface of the heat radiating substrate to a tip of the projection is equal to a height of the semiconductor chip bonded on the heat radiating substrate. A resin-encapsulated semiconductor device characterized by being equal in height.