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JP2001230453A - Led lamp and its manufacturing method - Google Patents

Led lamp and its manufacturing method

Info

Publication number
JP2001230453A
JP2001230453A JP2000374864A JP2000374864A JP2001230453A JP 2001230453 A JP2001230453 A JP 2001230453A JP 2000374864 A JP2000374864 A JP 2000374864A JP 2000374864 A JP2000374864 A JP 2000374864A JP 2001230453 A JP2001230453 A JP 2001230453A
Authority
JP
Japan
Prior art keywords
lead
led lamp
light emitting
emitting element
lead electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000374864A
Other languages
Japanese (ja)
Other versions
JP3685057B2 (en
Inventor
Ikuya Arai
育也 新居
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Chemical Industries Ltd
Original Assignee
Nichia Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Chemical Industries Ltd filed Critical Nichia Chemical Industries Ltd
Priority to JP2000374864A priority Critical patent/JP3685057B2/en
Publication of JP2001230453A publication Critical patent/JP2001230453A/en
Application granted granted Critical
Publication of JP3685057B2 publication Critical patent/JP3685057B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Led Device Packages (AREA)

Abstract

PROBLEM TO BE SOLVED: To obtain an LED lamp having a good directional characteristic in the small number of processes and at good yield. SOLUTION: The LED lamp with a lead electrode is formed in such a way that, in a region in which the lead electrode is not sealed with a molding resin, at least a solder region is used as an object, that protruded burr parts which is generated at a time when a lead electrode is punched and worked is flattened, and that a lusterless plating operation is executed to the surface of the lead electrode.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、LEDチップを利
用して発光させるLEDランプに係り、特に指向特性に
優れ信頼性の高いLEDランプに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an LED lamp that emits light using an LED chip, and more particularly to a highly reliable LED lamp having excellent directivity characteristics.

【0002】[0002]

【従来技術】LEDランプは小型で効率良く鮮やかな色
を発光し、初期駆動特性に優れていることから光センサ
ーや光プリンターなどの書き込み/読み込み光源、バッ
クライト光源、各種データなどが表示可能な表示装置な
ど種々の分野に利用されている。
2. Description of the Related Art LED lamps are small, efficiently emit vivid colors, and have excellent initial drive characteristics, so that they can display light / write light sources such as optical sensors and optical printers, backlight light sources, and various data. It is used in various fields such as display devices.

【0003】このようなLEDランプの具体的一例を図
6に示す。2本以上一対のリード電極のうちのファース
ト・リード2の先端に形成されたカップの底面上に発光
素子1が配置されている。発光素子1の一方の電極とフ
ァースト・リード2が電気的に接続され、他方の電極は
伝導性ワイヤー5などを用いてセカンド・リード3と電
気的に接続された後、両リードの先端部分に透光性の樹
脂等にてモールド部材4を設けている。このようなLE
Dランプを駆動基板等に接続させ電力を供給させると比
較的等方的に光が放出される。
FIG. 6 shows a specific example of such an LED lamp. The light emitting element 1 is arranged on the bottom surface of a cup formed at the tip of the first lead 2 of the pair of two or more lead electrodes. One electrode of the light emitting element 1 is electrically connected to the first lead 2 and the other electrode is electrically connected to the second lead 3 using a conductive wire 5 or the like. The mold member 4 is provided by a translucent resin or the like. LE like this
When the D lamp is connected to a driving substrate or the like to supply power, light is emitted relatively isotropically.

【0004】モールド部材4に用いる透光性封止樹脂
は、外部環境からの外力、水分などから保護すると共に
レンズ機能を兼ねているので、指向特性を一方のみに広
げるなど所望に変更することができる。さらに、ファー
スト・リード2上のカップの形状を変化させることで発
光出力を向上させることができる。このように、樹脂レ
ンズの形状、及び反射部の形状を調節することで所望の
発光特性を得ることができる。
The light-transmitting sealing resin used for the mold member 4 protects against external force from the external environment, moisture and the like, and also has a lens function. it can. Further, the light emission output can be improved by changing the shape of the cup on the first lead 2. As described above, by adjusting the shape of the resin lens and the shape of the reflection portion, desired emission characteristics can be obtained.

【0005】また、リード電極2,3は鉄、銅合金、鉄
ニッケル合金等の素材の金属板を、金属板の面に対して
直角に打ち抜いて所望の形のリードを形成し、その後フ
ァースト・リード2の長軸方向にプレス加工を施しカッ
プを形成させた後、リードの表面を銀、金又はパラジウ
ム等で覆っている。
The lead electrodes 2 and 3 are formed by punching a metal plate made of a material such as iron, copper alloy or iron nickel alloy at right angles to the surface of the metal plate to form a lead of a desired shape. After forming a cup by pressing in the longitudinal direction of the lead 2 to form a cup, the surface of the lead is covered with silver, gold, palladium or the like.

【0006】このようにリードにメッキを施すことで、
カップ上に発光素子1をダイボンドする際においてのボ
ンディング性が向上する。更に、ファースト・リード2
のカップ内表面のメッキ層の光沢度を調整することで良
好な指向特性でもって光の広がりを実現することができ
る。また、光沢度の低いメッキ層(以下無光沢メッキと
いう)の表面にはざらつきがあり、光沢面に比べモール
ド部材との密着性が向上する。
By plating the leads as described above,
The bonding property when the light emitting element 1 is die-bonded on the cup is improved. In addition, First Read 2
By adjusting the glossiness of the plating layer on the inner surface of the cup, light can be spread with good directivity characteristics. In addition, the surface of the plating layer having low gloss (hereinafter referred to as matte plating) is rough, and the adhesion to the mold member is improved as compared with the glossy surface.

【0007】[0007]

【発明が解決しようとする課題】しかしながら、無光沢
メッキをリード電極全体に施すと、ものによっては実装
基板との密着性の低下が見られていた。このような実装
不良はLEDランプが大量に実装される場合において歩
留まりや信頼性が大きく低下する原因となる。
However, when matte plating is applied to the entire lead electrode, the adhesion to the mounting substrate has been reduced in some cases. Such a mounting defect causes a large decrease in yield and reliability when a large number of LED lamps are mounted.

【0008】そこで、本発明は良好な指向特性を有し、
且つ生産性の良いLEDランプを提供することを目的と
する。
Accordingly, the present invention has good directional characteristics,
Another object of the present invention is to provide an LED lamp having good productivity.

【0009】[0009]

【課題を解決するための手段】すなわち、本発明に係る
LEDランプは、先端部に設けられたカップの底面上に
発光素子1を積載したファースト・リード2と、前記発
光素子1と電気的に接続されたセカンド・リード3によ
って構成されたリード電極2,3を備え、少なくとも前
記発光素子1及び各リードの先端部分2,3がモールド
部材4により封止されてなるLEDランプであって、前
記リード電極2,3は少なくともバリ部分12が平坦化
されており、且つリード電極2,3の表面全体に同一材
料からなる無光沢メッキが施されていることを特徴とす
る。
That is, an LED lamp according to the present invention comprises: a first lead 2 on which a light emitting element 1 is mounted on a bottom surface of a cup provided at a tip portion; An LED lamp comprising lead electrodes 2 and 3 constituted by connected second leads 3, wherein at least the light emitting element 1 and the tip portions 2 and 3 of the leads are sealed by a molding member 4, The lead electrodes 2 and 3 are characterized in that at least the burr portion 12 is flattened and that the entire surface of the lead electrodes 2 and 3 is subjected to matte plating made of the same material.

【0010】また、前記無光沢とは次式で表される光沢
度Dが0.05〜0.5の範囲にあることを特徴とす
る。 D=log(1/R) (但し、Rは、45度方向への反射率であり、R=(反
射光量/入射光量))
[0010] The term “matte” is characterized in that the glossiness D represented by the following formula is in the range of 0.05 to 0.5. D = log (1 / R) (where R is the reflectance in the 45-degree direction, and R = (reflected light quantity / incident light quantity))

【0011】このように構成することにより、発光素子
の横方向から発光される光をファースト・リード2のカ
ップ内表面で拡散させることができ、無指向に近い発光
パターンを形成することができる。また、バリ部分12
を平坦に潰すことで、無光沢メッキを施したリード電極
2,3にモールド部材4を設ける際に見られるリード電
極の半田付け領域方向へのモールド樹脂の這い上がりを
最小限に抑制することができる。
With such a configuration, light emitted from the lateral direction of the light emitting element can be diffused on the inner surface of the cup of the first lead 2, and a light pattern close to non-directional can be formed. Also, the burr portion 12
Is flattened, minimizing the rise of the mold resin in the direction of the soldering area of the lead electrode, which is observed when the mold member 4 is provided on the matte plated lead electrodes 2 and 3. it can.

【0012】また、リード電極2,3は、表面がモール
ド部材4で覆われた第1の領域と該モールド部材4の外
側に露出した第2の領域とを有すると共に、前記第2の
領域において少なくともバリ部分12が平坦化されてい
ることを特徴とする。
Each of the lead electrodes 2 and 3 has a first region whose surface is covered with a mold member 4 and a second region exposed outside the mold member 4. At least the burr portion 12 is flattened.

【0013】このように構成することにより、リード電
極の第1の領域では、発光の指向性及びモールド部材と
の密着性を考慮した表面を有し、第2の領域では実装時
の半田付け性を考慮した構成を有することとなり、従来
と同様に扱え、且つ指向性の改善されたLEDランプと
なる。
According to this structure, the first region of the lead electrode has a surface in consideration of directivity of light emission and adhesion to the mold member, and the second region has a solderability at the time of mounting. Is considered, and the LED lamp can be handled in the same manner as in the related art and has improved directivity.

【0014】更に、前記第2の領域においてバリ部分1
2及びダレ部分13が平坦化されていることを特徴とす
る。このように構成することによりリード電極の半田付
け領域はほぼ左右対称な形状となり実装工程における半
田付けの強度が向上される。また無光沢メッキ層をより
均一に薄く設けることが可能となる。本発明において無
光沢メッキ層の好ましい膜厚は2μm〜6μmである。
Further, in the second region, a burr portion 1 is formed.
2 and the sag portion 13 are flattened. With this configuration, the soldering region of the lead electrode has a substantially symmetrical shape, and the soldering strength in the mounting process is improved. In addition, it becomes possible to provide the matte plating layer more uniformly and thinly. In the present invention, the preferable thickness of the matte plating layer is 2 μm to 6 μm.

【0015】更に、モールド部材4は、LEDチップ上
にレンズ面が形成された透光性封止樹脂であることを特
徴とする。
Further, the molding member 4 is characterized by being a translucent sealing resin having a lens surface formed on an LED chip.

【0016】本発明の製造方法においては、先端部に設
けられたカップの底面上に発光素子1を積載したファー
スト・リード2と、前記発光素子1と電気的に接続され
たセカンド・リード3によって構成されたリード電極
2,3を備え、少なくとも前記発光素子1及び各リード
の先端部分がモールド部材4により封止されてなるLE
Dランプの製造方法において、少なくとも以下のLED
ランプの製造工程(A)〜(C)を有することを特徴と
する。 (A)リード電極素材の平板を打ち抜き加工によりファ
ースト・リード2とセカンド・リード3がタイバー7で
接続されたリード電極2,3を形成する工程。 (B)前記打ち抜き加工により打ち抜き側と反対方向で
あるリード電極2,3の底面側に生じる突起部分12を
少なくとも底面側から上方に向かってプレス加工する工
程。 (C)リード電極表面全体を無光沢にメッキする工程。
In the manufacturing method of the present invention, the first lead 2 having the light emitting element 1 mounted on the bottom surface of the cup provided at the tip and the second lead 3 electrically connected to the light emitting element 1 are provided. An LE comprising the configured lead electrodes 2 and 3, wherein at least the light emitting element 1 and the tip of each lead are sealed by a mold member 4.
In a method for manufacturing a D lamp, at least the following LED
It is characterized by having lamp manufacturing steps (A) to (C). (A) Step of forming lead electrodes 2 and 3 in which first lead 2 and second lead 3 are connected by tie bar 7 by punching a flat plate of a lead electrode material. (B) a step of pressing the projecting portions 12 formed on the bottom surfaces of the lead electrodes 2 and 3 in the direction opposite to the punching side by the punching at least upward from the bottom surface. (C) A step of plating the entire surface of the lead electrode matlessly.

【0017】また、前記無光沢とは次式で表される光沢
度Dが0.05〜0.5の範囲にあることを特徴とす
る。 D=log(1/R) (但し、Rは、45度方向への反射率であり、R=(反
射光量/入射光量))
Further, the above-mentioned "matte" is characterized in that the glossiness D represented by the following formula is in the range of 0.05 to 0.5. D = log (1 / R) (where R is the reflectance in the 45-degree direction, and R = (reflected light quantity / incident light quantity))

【0018】この製造方法により、リード電極の表面全
体に同一材料よりなる無光沢メッキを一度に施しても、
プレス加工されて平坦化されたバリ部分が後に形成され
るモールド樹脂の這い上がりを抑制するストッパーとな
り、主に発光を担う領域(第1の領域)と、主に実装時
の取り扱いの容易性を担う領域(第2の領域)とのそれ
ぞれの場所での用途をなしえる構成を有するLEDラン
プとすることができ、少ない工数で生産性良く製造する
ことが可能である。
According to this manufacturing method, even when matte plating made of the same material is applied to the entire surface of the lead electrode at one time,
The pressed and flattened burrs serve as stoppers for suppressing the rise of the mold resin to be formed later, and the area mainly responsible for light emission (first area) and the ease of handling mainly during mounting are improved. It is possible to provide an LED lamp having a configuration that can be used in each of the area where it is carried (the second area), and it is possible to manufacture the LED lamp with a small number of man-hours with high productivity.

【0019】[0019]

【発明の実施の形態】本発明者は、種々の実験の結果、
LEDランプの歩留まりがリード電極の形態によって大
きく変わることを見いだし、本発明を成すに至った。
BEST MODE FOR CARRYING OUT THE INVENTION The inventor of the present invention
The present inventors have found that the yield of the LED lamp varies greatly depending on the form of the lead electrode, and have accomplished the present invention.

【0020】リード電極は、素材の金属からなる下地板
を打ち抜くことにより形成されるが、平面状の下地板を
面に対して直角に打ち抜くため、下地板の底面側端縁部
分に突起状のバリが生じる。このような荒い表面を平滑
面にするため、表面にメッキを施し発光素子及びワイヤ
ーのボンディング性及びリード電極の耐食性を向上させ
ている。またファースト・リード2のカップ内表面を光
沢度の低い無光沢メッキ層を設け良好な指向特性を得る
こともできる。
The lead electrode is formed by punching a base plate made of a raw material metal. However, since a flat base plate is punched at right angles to the surface, a projecting protrusion is formed on the bottom edge of the base plate. Burrs occur. In order to make such a rough surface smooth, the surface is plated to improve the bonding property of the light emitting element and the wire and the corrosion resistance of the lead electrode. In addition, a good directional characteristic can be obtained by providing a matte plating layer having low gloss on the inner surface of the cup of the first lead 2.

【0021】しかしながら、突起状のバリを覆うほどの
厚みでもってメッキ層を設けると、実装基板のスルーホ
ールの径に適応せず、研磨加工等によって寸法を調整し
なければならない場合がある。また、ディスプレイ用基
板に実装される場合、解像度を向上させるためできるだ
け密に実装する必要があり、また発光装置の小型化が望
まれている。よって必然的にリード電極表面のメッキ層
は薄く設ける必要がある。
However, if the plating layer is provided with a thickness enough to cover the projecting burrs, the dimensions may have to be adjusted by polishing or the like, without adapting to the diameter of the through hole of the mounting board. In addition, when the light emitting device is mounted on a display substrate, the light emitting device needs to be mounted as densely as possible in order to improve the resolution. Therefore, it is necessary to provide a thin plating layer on the surface of the lead electrode.

【0022】また、メッキ工程を簡略化するために、発
光特性を考慮された無光沢メッキをリード電極一面に施
すと、リード電極の先端部分のみにモールド樹脂を被覆
させようとしても、モールド樹脂は所望の領域以上に広
がり半田付け領域にまで這い上がってきてしまう。これ
は、光沢面に比べ、無光沢面は、モールド部材とのぬれ
性が良好なためである。このことは、半田付け不良を招
く原因となる。なぜなら、モールド部材がリード電極の
半田付け領域にまでおよぶと、実装が不可能となってし
まうからである。特に、樹脂とのぬれ性が良好な無光沢
メッキによりバリを有するリード電極表面を薄く被膜し
た場合、バリ部分に電気が集中し他の面に比べ分厚くメ
ッキされてしまい均一な層が得られない。凸部となった
バリ上のメッキ部分は樹脂の這い上がり経路となってし
まい無光沢メッキのぬれ性と掛け合わせて樹脂が著しく
半田付け領域にまで這い上がってきてしまう。
Further, in order to simplify the plating process, if matte plating considering light emission characteristics is applied to one surface of the lead electrode, even if it is intended to coat only the tip portion of the lead electrode with the mold resin, It spreads over the desired area and crawls up to the soldering area. This is because the matte surface has better wettability with the mold member than the glossy surface. This causes soldering failure. This is because if the mold member reaches the soldering area of the lead electrode, mounting becomes impossible. In particular, when the lead electrode surface having burrs is thinly coated by matte plating having good wettability with resin, electricity is concentrated on the burrs, plating is thicker than other surfaces, and a uniform layer cannot be obtained. . The plated portion on the burr which has become the convex portion becomes a path for the resin to climb up, and the resin significantly climbs up to the soldering region in combination with the wettability of the matte plating.

【0023】打ち抜き形成により生じるリード電極のバ
リ取りの方法として、ワイヤーブラシ等によるスエージ
ング加工がある。しかしスエージング加工では一定の形
状となるようにバリを削り取ることは困難であり、後に
設けるメッキの厚みにバラツキが生じる原因となる。ま
た、リード電極の半田付け部分の断面が左右非対称な形
状となると実装基板に接する面が不安定であり、半田付
けの強度が低下したり実装基板のスルーホールに挿入し
た際に傾いたまま実装され色ムラが生じる傾向にある。
また作業に時間がかかるため加工中にリード電極の表面
が酸化され腐食する恐れがある。
As a method for deburring a lead electrode generated by punching, there is a swaging process using a wire brush or the like. However, it is difficult to remove burrs so as to have a fixed shape by the swaging process, which causes a variation in thickness of a plating provided later. In addition, if the cross section of the soldering part of the lead electrode is asymmetrical, the surface in contact with the mounting board will be unstable, and the soldering strength will decrease, or the solder will be mounted with a slant when inserted into the through hole of the mounting board Color unevenness tends to occur.
Also, since the operation takes time, the surface of the lead electrode may be oxidized and corroded during processing.

【0024】そこで本発明は、リード電極の好ましい形
状に対応して設計された金型を用い、バリ部分を少なく
ともバリ方向からプレス加工することにより前記バリ部
分を平坦化しバリを常に一定形状に潰した後に、リード
電極一面に無光沢メッキを薄く設ける。これによって、
好ましい外形を有する無光沢メッキ層が得られ、後の実
装工程を良好に行うことができる。
Therefore, the present invention uses a mold designed in accordance with the preferred shape of the lead electrode, and presses the burr portion at least from the burr direction to flatten the burr portion and crush the burr to a constant shape. After that, a thin matte plating is provided on one surface of the lead electrode. by this,
A matte plating layer having a preferable outer shape is obtained, and the subsequent mounting process can be performed favorably.

【0025】以下、図を参照にして本発明に係る実施の
形態について説明する。図1は本発明のLEDランプの
模式的断面図を示す。リード電極2,3の素材として鉄
入り銅を用いており、リード電極2,3表面全体に無光
沢銀メッキが施されている。リード電極2,3の一方
は、カップが設けられたファースト・リード2であり、
カップの近傍にはカップの肉厚を稼ぐと共にプレス加工
時などに生ずる歪みを防止させるバッファ機能を有する
凹部が設けられている。カップの形状は、リード電極
2,3間方向と平行方向に長いトラック形状としてあ
る。また、リード電極2,3においてモールド樹脂4が
被覆されない部分には、プレス加工を施しバリを平坦に
している。
An embodiment according to the present invention will be described below with reference to the drawings. FIG. 1 shows a schematic sectional view of the LED lamp of the present invention. Iron-containing copper is used as a material for the lead electrodes 2 and 3, and the entire surface of the lead electrodes 2 and 3 is subjected to matte silver plating. One of the lead electrodes 2 and 3 is a first lead 2 provided with a cup,
In the vicinity of the cup, there is provided a recess having a buffer function for increasing the thickness of the cup and preventing distortion generated during press working or the like. The shape of the cup is a track shape that is long in a direction parallel to the direction between the lead electrodes 2 and 3. The portions of the lead electrodes 2 and 3 that are not covered with the mold resin 4 are pressed to flatten the burrs.

【0026】ファースト・リード2のカップ底面上に発
光素子1を積載させる。図1では窒化物半導体を発光層
に有するLEDチップがエポキシ樹脂でダイボンドされ
ている。LEDチップの各電極とセカンド・リード3及
びファースト・リード2上の先端部位が、金線ワイヤー
5によりそれぞれワイヤーボンディングされ、LEDチ
ップ1及びリード電極2,3の先端部分にレンズ効果を
持つ透光性エポキシ樹脂からなる楕円形のモールド部材
4が形成されている。発光観測面から見て、モールド部
材4の楕円形の長径方向は平行方向が垂直よりも長いカ
ップ状とさせてある。このような構成により発光特性の
安定した歩留まりの高いLEDランプとすることができ
る。以下本発明の構成について詳述する。
The light emitting element 1 is mounted on the bottom surface of the cup of the first lead 2. In FIG. 1, an LED chip having a nitride semiconductor in a light emitting layer is die-bonded with an epoxy resin. Each electrode of the LED chip and the tip portion on the second lead 3 and the first lead 2 are wire-bonded by the gold wire 5, respectively, so that the LED chip 1 and the tip portions of the lead electrodes 2, 3 have a lens effect. An elliptical mold member 4 made of a conductive epoxy resin is formed. As viewed from the light emission observation surface, the major axis direction of the elliptical shape of the mold member 4 is formed in a cup shape whose parallel direction is longer than vertical. With such a configuration, an LED lamp with stable light emission characteristics and high yield can be obtained. Hereinafter, the configuration of the present invention will be described in detail.

【0027】(光沢度D)本発明に用いる光沢度Dと
は、次式に示されるものであり、測定にはGAM社製の
Densitmeter Model 144の光度計
を用いてその値を検出するものである。実施例について
も同様である。但し、微少領域(面積)、例えば反射部
(カップ)の底部などについては、日本電色工業株式会
社製の微小面積色差計VSR 300Aを用いて、測定
される。 D=log(1/R) (但し、Rは、45度方向への反射率であり、R=(反
射光量/入射光量))
(Glossiness D) Glossiness D used in the present invention is represented by the following formula, and the value is measured using a photometer of Densitometer Model 144 manufactured by GAM. is there. The same applies to the embodiment. However, a minute area (area), for example, the bottom of a reflection section (cup) is measured using a small area color difference meter VSR 300A manufactured by Nippon Denshoku Industries Co., Ltd. D = log (1 / R) (where R is the reflectance in the 45-degree direction, and R = (reflected light quantity / incident light quantity))

【0028】ここで、その測定器の原理について簡単に
説明すると、図5に示すように、測定物10を所定の位
置に置き、この測定物10の表面に光源8から光を当て
て、光源8から45度方向にある検出器9でもって、測
定物10表面で反射した光を検出する。この時、表面が
光沢を有する場合には、D値が大きく、比較的光沢の無
い場合には、D値が小さくなる。
Here, the principle of the measuring device will be briefly described. As shown in FIG. 5, a measuring object 10 is placed at a predetermined position, and a light source 8 irradiates the surface of the measuring object 10 with light. The light reflected from the surface of the measurement object 10 is detected by the detector 9 in the direction of 8 to 45 degrees. At this time, when the surface has gloss, the D value is large, and when the surface is relatively glossy, the D value is small.

【0029】(リード電極2,3)リード電極2,3
は、金属板を所望の形状に打ち抜くことによって形成さ
れる。本発明で用いるリード電極2,3は、肉厚が0.
5mm、縦35mm、横150mmの鉄入り銅板を打ち
抜き形成する。打ち抜かれたリード電極2,3は、図4
に示すようにタイバー7により複数のリード電極が連な
った形状を有する。リード電極は、発光素子が載置され
るファースト・リード2と発光素子の電極とワイヤー等
で電気的導通をとるセカンド・リード3からなる。ファ
ースト・リード2は先端上から部分的に圧力を加えるこ
とによってLEDチップを配置するべき底面が平坦なカ
ップ等の凹部を形成させることができる。
(Lead electrodes 2 and 3) Lead electrodes 2 and 3
Is formed by punching a metal plate into a desired shape. The lead electrodes 2 and 3 used in the present invention have a thickness of 0.1 mm.
A 5 mm, 35 mm long, 150 mm wide iron-containing copper plate is stamped and formed. The punched lead electrodes 2 and 3 are shown in FIG.
As shown in (1), the tie bar 7 has a shape in which a plurality of lead electrodes are connected. The lead electrode includes a first lead 2 on which the light emitting element is mounted, and a second lead 3 which is electrically connected to the electrode of the light emitting element by a wire or the like. The first lead 2 can form a concave portion such as a cup having a flat bottom surface on which the LED chip is to be disposed by partially applying pressure from the top.

【0030】また、金属板を面に対して直角に打ち抜く
際、金属板の底面側に金属が幾分か流れる。その流れた
部分が突起状となりバリが生じる。本発明では、このバ
リ部分12がリード電極一面に無光沢メッキを薄く被膜
した場合の樹脂の這い上がりをより進行させると考え、
前記バリ部分12をプレス加工して平坦にした後に無光
沢メッキを施すことにより、無光沢メッキにみられるモ
ールド樹脂の這い上がりを最小限に抑制するものであ
る。
Also, when the metal plate is punched at right angles to the plane, some metal flows to the bottom side of the metal plate. The flowed portion becomes a projection and burrs are generated. In the present invention, it is considered that the burr portion 12 further promotes the crawling of the resin when the entire surface of the lead electrode is coated with a thin matte plating,
By applying the matte plating after the burr portion 12 is flattened by pressing, the creeping up of the mold resin seen in the matte plating is suppressed to a minimum.

【0031】本発明において、バリ部分6を平坦にする
プレス加工はリード電極2,3の表面全体に対して必要
ではなく、少なくともモールド部材4に封止されない第
2領域である半田付け領域のリード電極に施されていれ
ばよい。モールド部材4により封止されてなる第1領域
では、モールド樹脂との密着性を考慮しバリ部分6をプ
レス加工せずそのままにしておくことが好ましい。ま
た、第2領域においては、少なくとも実装時に半田付け
領域となる部分だけ、若しくはその周辺部だけをバリ潰
しの対象としても良く、この部分にだけ適用されていれ
ば良い。すなわち、バリ潰しは、リード電極全体である
必要はなく、部分的なものであっても良い。
In the present invention, the press work for flattening the burr portion 6 is not necessary for the entire surface of the lead electrodes 2 and 3, and at least the lead of the soldering area which is the second area not sealed by the mold member 4. What is necessary is just to give to an electrode. In the first region sealed by the mold member 4, it is preferable that the burr portion 6 be left without being pressed in consideration of the adhesion to the mold resin. In the second region, at least only a portion to be a soldering region at the time of mounting or only a peripheral portion thereof may be subjected to burring, and it is sufficient that the second region is applied only to this portion. That is, the burrs need not necessarily cover the entire lead electrode, but may be partial.

【0032】また、本発明において、リード電極のバリ
部分と同時にダレ部分にもプレス加工を施すことが好ま
しい。ダレ部分とは、リード金属板を面に対して直角に
打ち抜かれる際にバリと反対側方向に生じる凸曲面部分
のことをいう。ダレの形状はリード金属板の打ち抜き加
減によって異なり一定形状にはならない。また、リード
電極にメッキ層を薄く均一に施すためには下地のリード
電極の形状が左右対称に近いほど好ましい。そこで本発
明ではバリ方向及びダレ方向の両側からプレス加工を同
時に行うことでリード電極を正多角形に近い形とするこ
とができる。
Also, in the present invention, it is preferable to press the sag portion simultaneously with the burr portion of the lead electrode. The sagging portion refers to a convex curved surface portion generated in a direction opposite to the burr when the lead metal plate is punched at right angles to the surface. The shape of the sag differs depending on the amount of punching of the lead metal plate and does not become a constant shape. Further, in order to form a thin and uniform plating layer on the lead electrode, it is preferable that the shape of the underlying lead electrode is closer to left-right symmetry. Therefore, in the present invention, the lead electrode can be formed into a shape close to a regular polygon by simultaneously performing press working from both sides in the burr direction and the sag direction.

【0033】具体的プレス加工の方法として、図7に示
すような好ましく設計された金型を用いることができ
る。金型は1辺が0.5mm、2辺が0.25mmから
なるコの字型のうち2つの直角部分において、rが0.
1mmで且つ底面角が45℃の二等辺三角形を除いた形
状とすることが好ましい。45℃より大きい又は小さい
角度とすると実装基板のスルーホールとの接触面積が少
なくなり不安定である。このように設計された金型を用
いてバリ側から又はバリ及びダレの両面側からプレス加
工を施し得られたリード電極の表面は、無光沢メッキを
薄く均一に設けるのに最適である。また、実装基板のス
ルーホールに挿入する際、ホールとリード電極との接点
が好ましい間隔で8点取ることができ、実装における安
定化が向上され好ましい。
As a specific press working method, a preferably designed die as shown in FIG. 7 can be used. As for the mold, in two right-angled portions of a U-shape having one side of 0.5 mm and two sides of 0.25 mm, r is 0.
It is preferable that the shape be a shape excluding an isosceles triangle having a bottom angle of 45 ° C. and 1 mm. If the angle is larger or smaller than 45 ° C., the contact area with the through-hole of the mounting board becomes small, and it is unstable. The surface of the lead electrode obtained by pressing from the burr side or from both sides of the burr and the sag using the mold designed in this way is optimal for providing a thin and uniform matte plating. In addition, when the semiconductor device is inserted into the through hole of the mounting board, eight points of contact between the hole and the lead electrode can be taken at a preferable interval, and the stability in mounting is improved, which is preferable.

【0034】また、モールド樹脂の這い上がりの抑制を
強化させるため、メッキを施す前に第2の領域のバリが
生じる側又はバリ及びダレが生じる両面側の上方にパン
チングにより凹部を設けるか、若しくはリード電極の端
面に溝を設けてもよい。このように構成することにより
前記凹部や前記溝が樹脂這い上がりのストッパーとなり
好ましい。
Further, in order to enhance the suppression of the mold resin from climbing up, before plating, a concave portion is provided by punching above the burrs on the second region or on both sides where burrs and sagging occur, or A groove may be provided on the end face of the lead electrode. With such a configuration, the concave portions and the grooves preferably serve as stoppers for rising the resin.

【0035】このように鉄入り銅からなる下地板を垂直
方向に打ち抜き、プレス加工が施されたリード電極は、
まず前処理として純水により脱脂処理される。その後下
地メッキとして銅メッキをリード電極一面に施すと表面
がなめらかとなり好ましい。そして仕上げに無光沢メッ
キである銀メッキをリード電極の表面一体に被膜させ
る。
As described above, the lead electrode punched out from the base plate made of iron-containing copper and subjected to press working is:
First, a degreasing treatment with pure water is performed as a pretreatment. Thereafter, copper plating is preferably applied to one surface of the lead electrode as a base plating, since the surface is smooth and is preferable. Then, silver plating, which is matte plating, is coated on the surface of the lead electrode for finishing.

【0036】本発明において、リード電極2,3表面に
設けられる無光沢メッキの光沢度Dは、0.05〜0.
5の範囲であり、好ましくは、0.1〜0.3の範囲で
ある。なぜなら、光沢度が0.05未満であると例えば
反射部の調整された指向角外への光の放射が多くなり、
LEDランプとしての輝度が大幅に低下する。また、
0.5を超えると、放射強度に偏りが表れ、複数個の発
光ダイオードを配置して観察した場合に各発光ダイオー
ドごとの輝度のばらつきが目立ちはじめるからである。
更に、0.1以上、0.3以下の範囲であると、指向半
値角の広い、例えば120°以上の場合であっても、良
好な光の広がりが実現され、その指向特性図において滑
らかな曲線となる。
In the present invention, the gloss D of the matte plating provided on the surfaces of the lead electrodes 2 and 3 is 0.05 to 0.5.
5 and preferably in the range of 0.1 to 0.3. Because, if the glossiness is less than 0.05, for example, the emission of light outside the adjusted directivity angle of the reflection unit increases,
The brightness as an LED lamp is greatly reduced. Also,
If it exceeds 0.5, the radiation intensity will be biased, and when a plurality of light emitting diodes are arranged and observed, the variation in luminance among the light emitting diodes will start to be noticeable.
Further, when the angle is in the range of 0.1 or more and 0.3 or less, even when the directional half angle is wide, for example, 120 ° or more, good light spread is realized, and the directional characteristic diagram has a smooth pattern. It becomes a curve.

【0037】ここで、リード電極2,3に設けられる無
光沢メッキD値(光沢度)を上述の範囲になるように調
整する方法としては、特に限定されないが、表面が滑ら
かでなく、微少な凹凸を有するもの等がある。具体的に
は、リード電極2,3には、通常メッキが施されている
が、このときメッキ条件を調整して好ましい光沢度の表
面を得る方法、メッキする前に予め表面に微細な凹凸を
設けておく方法、メッキ後に微細な凹凸を設ける方法等
がある。この時の凹凸の程度としては、指向性を損なわ
ずに、絞り込まれた指向角内で適度に光が広がる程度で
あればよい。ここで、メッキ条件を調整する方法とし
て、メッキ浴中の添加剤の量を調整して、形成されるメ
ッキの形態を変化させる、例えば緻密で均一なものか
ら、粗くて凹凸を有するものとする等がある。表面に凹
凸を設けた後メッキする、若しくはメッキ後に凹凸を設
ける方法としては、ブラスト加工など一般的に知られて
いる方法でよい。
Here, the method of adjusting the D value (glossiness) of the matte plating provided on the lead electrodes 2 and 3 so as to be in the above-mentioned range is not particularly limited, but the surface is not smooth and the surface is fine. Some have irregularities. Specifically, the lead electrodes 2 and 3 are usually plated. In this case, a method of adjusting the plating conditions to obtain a surface having a preferable glossiness is performed. There is a method of providing such a method, a method of providing fine irregularities after plating, and the like. The degree of the unevenness at this time may be such that light is appropriately spread within the narrowed directivity angle without impairing the directivity. Here, as a method of adjusting the plating conditions, the amount of the additive in the plating bath is adjusted to change the form of the formed plating, for example, from a dense and uniform one, to a coarse and uneven one. Etc. As a method of plating after forming unevenness on the surface, or providing unevenness after plating, a generally known method such as blasting may be used.

【0038】また、上述の範囲に光沢度(D値)が調整
されたリード電極2,3を用いることで、LEDチップ
1のボンディング性が向上し、モールド部材4との密着
性も向上する。詳しくは、前記リード電極2,3表面の
微細な凹凸は、表面積、接着面積が従来のそれらより大
きいため、接着性、密着性が向上するものである。より
好ましくは、D値が0.1〜0.3の範囲にあることで
ある。
Further, by using the lead electrodes 2 and 3 whose glossiness (D value) is adjusted within the above range, the bonding property of the LED chip 1 is improved, and the adhesion to the mold member 4 is also improved. More specifically, the fine irregularities on the surfaces of the lead electrodes 2 and 3 improve the adhesiveness and the adhesion since the surface area and the adhesive area are larger than those of the related art. More preferably, the D value is in the range of 0.1 to 0.3.

【0039】本発明において、無光沢メッキ層の好まし
い膜厚は2μm〜6μmである。このようにメッキ層を
薄く設けることによりメッキの膜厚をリード電極の寸法
上の許容範囲内にとどめることができ、リード電極の設
計及び後の実装工程を容易に行うことができる。また発
光装置の小型化にも十分に対応することができる。
In the present invention, the preferable thickness of the matte plating layer is 2 μm to 6 μm. By providing a thin plating layer in this manner, the thickness of the plating can be kept within the allowable range of the dimensions of the lead electrode, and the design of the lead electrode and the subsequent mounting process can be easily performed. Further, it is possible to sufficiently cope with downsizing of the light emitting device.

【0040】無光沢メッキの具体的材料として、本発明
では銀を用いている。銀は熱伝導性が良好であり、銀を
用いて電極一面をメッキすることにより消費電力の小さ
い発光装置を形成することができ好ましい。また半田の
ように有害な物質を有しておらず環境汚染が問題となっ
ている現在に対応した発光装置を形成することができ
る。また高温においても溶解しないため取り扱い易い。
As a specific material for matte plating, silver is used in the present invention. Silver is preferable because it has good thermal conductivity and a light-emitting device with low power consumption can be formed by plating one surface of the electrode with silver. Further, it is possible to form a light emitting device which does not have a harmful substance such as solder and has a problem of environmental pollution, which is compatible with the present. Also, it is easy to handle because it does not dissolve even at high temperatures.

【0041】リード電極の形状は、図3−(b)に示す
ように、モールド部材で封止される第1の領域では複雑
な折れ曲がり形状を有する。このように角度を持たせる
ことによりボンディングの際に受ける圧力を和らげるこ
とができる。また、リード電極に長軸方向と垂直な方向
に面を設けることによりモールド部材形成工程のキャス
ティングケースから取り外す際に受ける引力によるリー
ド電極とモールド部材との剥離を抑制することができ
る。更に、リード電極は発光素子が載置されるマウント
・リードを他のセカンド・リードよりも幅太く形成され
ることが好ましい。このように構成することにより発光
装置の放熱性が向上される。
As shown in FIG. 3B, the shape of the lead electrode has a complicated bent shape in the first region sealed by the mold member. With such an angle, the pressure received during bonding can be reduced. In addition, by providing a surface in the direction perpendicular to the long axis direction of the lead electrode, peeling of the lead electrode and the mold member due to an attractive force received when the lead electrode is removed from the casting case in the mold member forming step can be suppressed. Further, it is preferable that the lead electrode is formed so that the mount lead on which the light emitting element is mounted is wider than the other second leads. With this configuration, the heat dissipation of the light emitting device is improved.

【0042】(発光素子1)発光素子1としては、液相
成長法やMOCVD法等により基板上にGaAlN、Z
nS、ZnSe、SiC、GaP、GaAlAs、Al
InGaP、InGaN、GaN、AlInGaN等の
半導体の構造として形成したものが用いられる。半導体
の構造としては、MIS接合、PIN接合やpn接合な
どを有するホモ構造、ヘテロ構造あるいはダブルヘテロ
構造のものが挙げられる。半導体層の材料やその混晶度
によって発光波長を紫外光から赤外光まで種々選択する
ことができる。
(Light-Emitting Element 1) As the light-emitting element 1, GaAlN, Z
nS, ZnSe, SiC, GaP, GaAlAs, Al
What is formed as a semiconductor structure such as InGaP, InGaN, GaN, and AlInGaN is used. Examples of the semiconductor structure include a homostructure having a MIS junction, a PIN junction, and a pn junction, a heterostructure, and a double heterostructure. The emission wavelength can be variously selected from ultraviolet light to infrared light depending on the material of the semiconductor layer and the degree of mixed crystal thereof.

【0043】本発明において、ファースト・リード2に
載置するLEDチップの個数は、1個に限定されず、素
子構造若しくは発光色の異なるLEDチップ、又は同色
系若しくは同一のLEDチップを、複数個1つのファー
スト・リード2に載置してもよく、これらLEDチップ
が載置されたファースト・リード2を複数個組み合わせ
てモールド部材で封止されていてもよい。
In the present invention, the number of LED chips mounted on the first lead 2 is not limited to one, and a plurality of LED chips having different element structures or luminescent colors, or a plurality of LED chips having the same color or the same color are used. The LED chip may be mounted on one first lead 2 or a plurality of first leads 2 on which these LED chips are mounted may be combined and sealed with a mold member.

【0044】(モールド部材4)モールド部材4は、各
発光素子1及び導電性ワイヤー5などを外部から保護す
るために設けることが好ましく、一般的には樹脂を用い
て形成される。また、樹脂モールドを所望の形状にする
ことによって発光素子1からの発光を収束させたり拡散
させたりするレンズ効果を持たせることができる。本発
明においてモールド樹脂の形態は、発光観測面側から見
て円形状でも楕円形状でも良い。さらに、樹脂モールド
自体に着色させて所望外の波長をカットするフィルター
の役目を果たすこともできる。上記樹脂モールドの材料
としては、エポキシ樹脂、ユリア樹脂などの耐候性に優
れた透明樹脂が好適に用いられる。
(Mold Member 4) The mold member 4 is preferably provided to protect the light emitting elements 1 and the conductive wires 5 from the outside, and is generally formed using a resin. Further, by forming the resin mold into a desired shape, it is possible to have a lens effect of converging or diffusing light emitted from the light emitting element 1. In the present invention, the form of the mold resin may be circular or elliptical when viewed from the light emission observation surface side. Further, the resin mold itself may be colored to serve as a filter that cuts an undesired wavelength. As a material of the resin mold, a transparent resin having excellent weather resistance such as an epoxy resin and a urea resin is suitably used.

【0045】以下、本発明に係る実施例のLEDランプ
について説明する。なお、本発明は以下に示す実施例の
みに限定されるものではない。
Hereinafter, an LED lamp according to an embodiment of the present invention will be described. Note that the present invention is not limited to only the examples described below.

【0046】[実施例1]本発明の一実施例に係るLE
Dランプを図1に示す。このLEDランプは、一対のリ
ード電極2,3を有し、一方の電極であるファースト・
リード2の先端にLEDチップ1を載置するための反射
部が設けられている。前記リード電極2,3は予めリー
ド電極の打ち抜きの際に生じるリード電極底面側のバリ
部分6を平坦化するため、モールド部材4に封止されな
い第2領域全体において底面側から上方に向かって平行
にプレス加工を施されている。下地処理として銅メッキ
を施した後、仕上げに光沢度D=0.1に調整した銀よ
りなる無光沢銀メッキがリード電極2,3全体に3μm
の膜厚で施されている。
[Embodiment 1] LE according to an embodiment of the present invention
The D lamp is shown in FIG. This LED lamp has a pair of lead electrodes 2 and 3, and one
A reflector for mounting the LED chip 1 is provided at the tip of the lead 2. The lead electrodes 2 and 3 are parallel in an upward direction from the bottom surface side in the entire second region not sealed by the mold member 4 in order to flatten a burr portion 6 on the bottom surface of the lead electrode generated in advance when the lead electrode is punched. Has been pressed. After copper plating as a base treatment, matte silver plating made of silver adjusted to a gloss level of D = 0.1 is 3 μm on the entire lead electrodes 2 and 3.
It is applied with a film thickness.

【0047】以上のように形成されたリード電極2,3
のファースト・リード2のカップ底面に、発光素子1と
して青色(470nm)が発光可能なIn0.05Ga0.95
N半導体よりなるLEDチップ1をエポキシ樹脂によっ
てダイボンドする。発光側面側から見てLEDチップ1
の一方の電極とセカンド・リード3の先端部とを第1の
導電性ワイヤー5である直径0.03mmの金線によっ
てワイヤーボンディングし電気的導通をとっている。同
様に、カップと凹部を介して反対側にあるファースト・
リード2の先端部と、LEDチップ1の他方の電極とを
第2の導電性ワイヤー5である直径0.03mmの金線
によってワイヤーボンディングし電気的導通をとってい
る。
The lead electrodes 2 and 3 formed as described above
In 0.05 Ga 0.95 capable of emitting blue light (470 nm) as the light emitting element 1 on the bottom surface of the cup of the first lead 2 of FIG.
An LED chip 1 made of N semiconductor is die-bonded with an epoxy resin. LED chip 1 as viewed from the light emitting side
One of the electrodes and the tip of the second lead 3 are wire-bonded to each other with a gold wire having a diameter of 0.03 mm, which is the first conductive wire 5, for electrical continuity. Similarly, the first on the opposite side through the cup and recess
The distal end of the lead 2 and the other electrode of the LED chip 1 are wire-bonded to each other with a gold wire having a diameter of 0.03 mm, which is the second conductive wire 5, to achieve electrical continuity.

【0048】LEDチップ1と電気的に接続されたリー
ド電極2,3の先端部をキャスティングケースに入れエ
ポキシ樹脂を充填させ、150℃、5時間で硬化させて
モールド部材4を発光側面側から見て楕円形状に形成さ
せている。
The tips of the lead electrodes 2 and 3 electrically connected to the LED chip 1 are placed in a casting case, filled with epoxy resin, cured at 150 ° C. for 5 hours, and the mold member 4 is viewed from the light emitting side. To form an elliptical shape.

【0049】以上のように構成することにより、歩留ま
り良くLEDランプを生産することができる。また、無
指向に近い発光パターンを有する発光特性の優れたLE
Dランプが得られる。
With the above configuration, an LED lamp can be produced with a high yield. In addition, LE having excellent light emission characteristics having a light pattern close to non-directivity is provided.
A D lamp is obtained.

【0050】[比較例]これに対し、実施例1と比較す
るために、リード電極2,3を打ち抜く際に生じるリー
ド電極底面側のバリ部分6を平坦化せずそのまま使用す
ることを除いては実施例1と同様にしてLEDランプを
形成し電流を供給すると、発光しないものがみられる。
この発光しない不灯品を調べると、その全てにおいてモ
ールド部材4の樹脂がリード電極2,3の半田付け領域
にまで這い上がっており、実装面との半田付けが不十分
である。
[Comparative Example] On the other hand, in comparison with the first embodiment, except that the burr portion 6 on the bottom surface side of the lead electrode, which is generated when the lead electrodes 2 and 3 are punched, is used without being flattened. When an LED lamp is formed and a current is supplied in the same manner as in the first embodiment, some lamps do not emit light.
Inspection of the non-lighting products that do not emit light reveals that the resin of the mold member 4 has crawled up to the soldering area of the lead electrodes 2 and 3 in all of them, and the soldering with the mounting surface is insufficient.

【0051】[実施例2]リード電極2,3のバリ潰し
の際、第2領域のタイバー位置から第1領域と同方向の
第2領域末端までの領域のみに底面側から上方に向かっ
て平行にプレス加工を施し、前記領域のみのバリが平坦
化しているされていることを除いては実施例1と同様な
LEDランプを形成したところ、実施例1と同様の効果
が得られる。
[Embodiment 2] When burrs of the lead electrodes 2 and 3 are crushed, only the region from the tie bar position of the second region to the end of the second region in the same direction as the first region is parallel upward from the bottom side. Is pressed to form an LED lamp similar to that of the first embodiment except that the burrs in only the above-mentioned region are flattened. The same effect as that of the first embodiment can be obtained.

【0052】[実施例3]リード電極2,3のバリ潰しの
際、第2領域全体において底面側からと上面からからの
両サイドからリード電極2,3を挟むようにプレス加工
を施す以外は実施例1と同様にしてLEDランプを形成
すると、実施例1と同様の効果が得られる。
Example 3 When burrs of the lead electrodes 2 and 3 were crushed, except that the lead electrodes 2 and 3 were pressed so as to sandwich the lead electrodes 2 and 3 from both sides from the bottom side and the top side in the entire second region. When the LED lamp is formed in the same manner as in the first embodiment, the same effects as in the first embodiment can be obtained.

【0053】[実施例4]リード電極2,3のバリ潰し
の際、第2領域のタイバー7位置から第1領域と同方向
の第2領域末端までの領域のみにおいて底面側からと上
面からの両サイドからリード電極2,3を挟むようにプ
レス加工を施す以外は実施例1と同様にしてLEDラン
プを形成すると、実施例1と同様の効果が得られる。
[Embodiment 4] When the burrs of the lead electrodes 2 and 3 are crushed, only the region from the position of the tie bar 7 in the second region to the end of the second region in the same direction as the first region is viewed from the bottom surface side and the top surface. When the LED lamp is formed in the same manner as in the first embodiment except that pressing is performed so as to sandwich the lead electrodes 2 and 3 from both sides, the same effect as in the first embodiment can be obtained.

【0054】[実施例5]リード電極2,3表面の光沢
度が0.3である以外は、実施例1と同様にしてLED
ランプを形成すると、実施例1と同様の効果が得られ
る。
Example 5 An LED was manufactured in the same manner as in Example 1 except that the glossiness of the surfaces of the lead electrodes 2 and 3 was 0.3.
When the lamp is formed, the same effect as in the first embodiment can be obtained.

【0055】[実施例6]発光素子1として赤色(66
0nm)が発光可能なGaAIAsN半導体よりなるL
EDチップを、実施例1と同様な方法で形成されたリー
ド電極のカップ底面に銀粉末が含有されたエポキシ樹脂
によりダイボンドする。発光側面側から見てLEDチッ
プ1の表面の電極とインナー・リード3の先端部とを直
径0.03mmの金線ワイヤー5によってワイヤーボン
ディングし電気的導通をとっている。
[Embodiment 6] Red (66)
0 nm), which is composed of a GaAsAsN semiconductor capable of emitting light.
The ED chip is die-bonded to the bottom surface of the cup of the lead electrode formed in the same manner as in Example 1 using an epoxy resin containing silver powder. The electrodes on the surface of the LED chip 1 and the tips of the inner leads 3 are wire-bonded by a gold wire 5 having a diameter of 0.03 mm when viewed from the side of the light-emitting side to establish electrical continuity.

【0056】LEDチップ1と電気的に接続されたリー
ド電極2,3の先端部にモールド部材4として円形状で
砲弾型の樹脂レンズを設ける以外は実施例1と同様にし
てLEDランプを形成すると、実施例1と同様の効果が
得られる。
An LED lamp is formed in the same manner as in the first embodiment except that a circular shell-shaped resin lens is provided as a molding member 4 at the tip of the lead electrodes 2 and 3 electrically connected to the LED chip 1. Thus, the same effect as in the first embodiment can be obtained.

【0057】[実施例7]図4に示すように、発光素子
1として赤、青、緑色のLEDチップを用いることを除
いては実施例1と同様にLEDランプを形成すると、実
施例1と同様の効果が得られる。
Embodiment 7 As shown in FIG. 4, when an LED lamp is formed in the same manner as in Embodiment 1 except that red, blue, and green LED chips are used as the light emitting element 1, Similar effects can be obtained.

【0058】また、得られるLEDランプにおいて、各
素子をそれぞれに発光させたときの指向特性は良好な一
致を有し、異なる素子を同一のマウント・リード2に載
置しても、LEDランプは良好な混色性を有することが
できる。本実施例では、単に各素子を反射部に載置した
だけで、容易に広い視野角のほぼ全域において良好な指
向性の一致が実現でき、素子の違いを意識せずにLED
ランプを設計することができる。
Further, in the obtained LED lamp, the directivity characteristics when each element emits light are in good agreement, and even if different elements are mounted on the same mount lead 2, the LED lamp will Good color mixing properties can be obtained. In the present embodiment, simply placing each element on the reflecting portion can easily achieve good matching of directivity over almost the entire range of a wide viewing angle.
Lamp can be designed.

【0059】[実施例8]無光沢メッキを施す際、まず
リード電極一面に2μmの膜厚で無光沢である銀メッキ
を施し、更に発光素子を配置させるカップ付近に3μm
の膜厚で無光沢銀メッキを施す以外は実施例1と同様に
してLEDランプを形成すると更に高出力のLEDラン
プが得られる。
[Embodiment 8] When matte plating is performed, first, a surface of the lead electrode is matted with silver having a thickness of 2 μm and matte silver plating is further applied.
When an LED lamp is formed in the same manner as in Example 1 except that a matte silver plating is applied with a film thickness of, a higher-output LED lamp is obtained.

【0060】[実施例9]無光沢メッキを施す前に、リ
ード電極の第2の領域のバリが生じる面側の上側にパン
チングにより凹部を複数設ける以外は実施例1と同様に
してLEDランプを形成すると更に樹脂の這い上がりを
抑制することができる。
Ninth Embodiment An LED lamp is manufactured in the same manner as in the first embodiment except that a plurality of recesses are formed by punching on the upper side of the surface of the second region of the lead electrode where burrs occur before matte plating is performed. When it is formed, it is possible to further suppress the rise of the resin.

【0061】[実施例10]前記凹部を第2領域のバリ
が生じる面側及びダレが生じる面側の両面に設ける以外
は実施例9と同様にしてLEDランプを形成すると更に
樹脂の這い上がりを抑制することができる。
[Embodiment 10] When an LED lamp is formed in the same manner as in Embodiment 9 except that the concave portion is provided on both the side of the second area where burrs occur and the side where sagging occurs, the resin further rises. Can be suppressed.

【0062】[実施例11]無光沢メッキを施す前に、
リード電極の第2の領域の上側端面に溝を設ける以外は
実施例1と同様にしてLEDランプを形成すると更に樹
脂の這い上がりを抑制することができる。
Example 11 Before applying the matte plating,
When the LED lamp is formed in the same manner as in the first embodiment except that a groove is provided on the upper end surface of the second region of the lead electrode, it is possible to further suppress the resin from rising.

【0063】[0063]

【発明の効果】以上、説明したように本発明に係るLE
Dランプは、リード電極のモールド樹脂に封止されない
第2領域において、少なくとも半田付け領域を対象にプ
レス加工を施しバリを潰して平坦にした後に光沢度を無
光沢に調整した銀メッキを施すことで、良好な指向特性
でもって光の広がりを実現することができるLEDラン
プを少ない工数で歩留まり良く得ることができるもので
ある。
As described above, the LE according to the present invention is used as described above.
In the second region of the D lamp which is not sealed with the molding resin of the lead electrode, at least the soldering region is subjected to press working to crush the burrs and flatten, and then to apply silver plating whose glossiness is adjusted to matte. Thus, it is possible to obtain an LED lamp capable of realizing the spread of light with good directional characteristics with a small number of man-hours and a good yield.

【0064】また、本発明に係るLEDランプにおいて
は、リード電極のメッキ層の光沢度Dは0.05〜0.
5が好ましく、より好ましくは0.1〜0.3である。
このようなメッキ層をリード電極表面に施すことで、よ
り良好な光の広がりが実現されるとともに、カップ上に
発光素子をダイボンドする際においてのボンディング性
が向上し、また、モールド部材との密着性が良好とな
る。
In the LED lamp according to the present invention, the gloss D of the plating layer of the lead electrode is 0.05 to 0.5.
5 is preferred, and more preferably 0.1 to 0.3.
By applying such a plating layer to the surface of the lead electrode, better light spread is realized, the bonding property when the light emitting element is die-bonded on the cup is improved, and the adhesion to the mold member is improved. The property becomes good.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 (a)は本発明に係る実施の形態であるLE
Dランプの模式的平面図であり、(b)は、(a)のA
−A’線についての模式的断面図である。
FIG. 1A shows an LE according to an embodiment of the present invention;
It is a schematic plan view of D lamp, (b) is A of (a).
FIG. 4 is a schematic cross-sectional view taken along line -A ′.

【図2】 (a)は本発明に係る実施例6のLEDラン
プの模式的平面図であり、(b)は、(a)のB−B’
線についての模式的断面図である。
FIG. 2A is a schematic plan view of an LED lamp according to a sixth embodiment of the present invention, and FIG. 2B is BB ′ of FIG.
It is a typical sectional view about a line.

【図3】 (a)は本発明に係る実施例7のLEDラン
プの模式的平面図であり、(b)は、(a)のC−C’
線についての模式的断面図である。
FIG. 3A is a schematic plan view of an LED lamp according to a seventh embodiment of the present invention, and FIG. 3B is a CC ′ of FIG.
It is a typical sectional view about a line.

【図4】 (a)は本発明に係る1実施の形態であるL
EDランプに用いたリード電極の模式的断面図であり、
(b)は、(a)のD−D’線についての模式的断面図
である。
FIG. 4A is an embodiment of the present invention, L
FIG. 3 is a schematic cross-sectional view of a lead electrode used for an ED lamp,
(B) is a schematic cross-sectional view taken along line DD ′ of (a).

【図5】 本発明に用いる光沢度の測定方法を説明する
模式図である。
FIG. 5 is a schematic diagram illustrating a method for measuring glossiness used in the present invention.

【図6】 従来のLEDランプを説明する模式的断面図
である。
FIG. 6 is a schematic sectional view illustrating a conventional LED lamp.

【図7】 本発明で用いられるプレス工程を説明する模
式的断面図である。
FIG. 7 is a schematic cross-sectional view illustrating a pressing step used in the present invention.

【符号の説明】[Explanation of symbols]

1・・・発光素子 2・・・ファースト・リード 3・・・セカンド・リード 4・・・モールド樹脂 5・・・ワイヤー 6・・・平坦化されたバリ 7・・・タイバー 8・・・光源 9・・・検出器 10・・・測定物 11・・・金型 12・・・バリ 13・・・ダレ 14・・・一定形状化されたダレ DESCRIPTION OF SYMBOLS 1 ... Light emitting element 2 ... First lead 3 ... Second lead 4 ... Mold resin 5 ... Wire 6 ... Flattened burr 7 ... Tie bar 8 ... Light source 9 ... Detector 10 ... Measured object 11 ... Mold 12 ... Burr 13 ... Sag 14 ... Sag in uniform shape

Claims (8)

【特許請求の範囲】[Claims] 【請求項1】 先端部に設けられたカップの底面上に発
光素子1を積載したファースト・リード2と、前記発光
素子1と電気的に接続されたセカンド・リード3によっ
て構成されたリード電極2,3を備え、少なくとも前記
発光素子1及び各リードの先端部分2,3がモールド部
材4により封止されてなるLEDランプであって、前記
リード電極2,3は少なくともバリ部分12が平坦化さ
れており、且つリード電極2,3の表面全体に同一材料
からなる無光沢メッキが施されていることを特徴とする
LEDランプ。
1. A lead electrode 2 comprising a first lead 2 on which a light emitting element 1 is mounted on a bottom surface of a cup provided at a tip portion, and a second lead 3 electrically connected to the light emitting element 1. An LED lamp comprising at least the light emitting element 1 and the tip portions 2 and 3 of the respective leads are sealed by a molding member 4. The lead electrodes 2 and 3 have at least a burr portion 12 flattened. An LED lamp characterized in that matte plating made of the same material is applied to the entire surfaces of the lead electrodes 2 and 3.
【請求項2】 前記無光沢とは次式で表される光沢度D
が0.05〜0.5の範囲にあることを特徴とする請求
項1に記載のLEDランプ。 D=log(1/R) (但し、Rは、45度方向への反射率であり、R=(反
射光量/入射光量))
2. The glossiness is a glossiness D represented by the following formula:
The LED lamp according to claim 1, wherein is in the range of 0.05 to 0.5. D = log (1 / R) (where R is the reflectance in the 45-degree direction, and R = (reflected light quantity / incident light quantity))
【請求項3】 前記リード電極2,3は、表面がモール
ド部材4で覆われた第1の領域と該モールド部材4の外
側に露出した第2の領域とを有すると共に、前記第2の
領域において少なくともバリ部分12が平坦化されてい
ることを特徴とする請求項1乃至2に記載のLEDラン
プ。
3. The lead electrodes 2 and 3 have a first region whose surface is covered with a mold member 4 and a second region exposed outside the mold member 4 and the second region. 3. The LED lamp according to claim 1, wherein at least the burr portion 12 is flattened.
【請求項4】 前記第2の領域においてバリ部分12及
びダレ部分13が平坦化されていることを特徴とする請
求項1乃至3に記載のLEDランプ。
4. The LED lamp according to claim 1, wherein the burr portion and the sag portion are flattened in the second region.
【請求項5】 前記無光沢メッキの膜厚は2μm〜6μ
mであることを特徴とする請求項1乃至4に記載のLE
Dランプ。
5. The film thickness of the matte plating is 2 μm to 6 μm.
5. The LE according to claim 1, wherein m is m.
D lamp.
【請求項6】 前記モールド部材4は、LEDチップ上
にレンズ面が形成された透光性封止樹脂であることを特
徴とする請求項1乃至5に記載のLEDランプ。
6. The LED lamp according to claim 1, wherein the molding member is a light-transmitting sealing resin having a lens surface formed on an LED chip.
【請求項7】 先端部に設けられたカップの底面上に発
光素子1を積載したファースト・リード2と、前記発光
素子1と電気的に接続されたセカンド・リード3によっ
て構成されたリード電極2,3を備え、少なくとも前記
発光素子1及び各リードの先端部分がモールド部材4に
より封止されてなるLEDランプの製造方法において、
少なくとも以下のLEDランプの製造工程(A)〜
(C)を有することを特徴とするLEDランプの製造方
法。 (A)リード電極素材の平板を打ち抜き加工によりファ
ースト・リード2とセカンド・リード3がタイバー7で
接続されたリード電極2,3を形成する工程。 (B)前記打ち抜き加工により打ち抜き側と反対方向で
あるリード電極2,3の底面側に生じる突起部分12を
少なくとも前記底面側から上方に向かってプレス加工す
る工程。 (C)リード電極表面全体を無光沢にメッキする工程。
7. A lead electrode 2 comprising a first lead 2 on which a light emitting element 1 is mounted on a bottom surface of a cup provided at a tip portion, and a second lead 3 electrically connected to the light emitting element 1. , 3 in which at least the light emitting element 1 and the leading end of each lead are sealed by a mold member 4,
At least the following LED lamp manufacturing steps (A)-
(C) A method for manufacturing an LED lamp, comprising: (A) Step of forming lead electrodes 2 and 3 in which first lead 2 and second lead 3 are connected by tie bar 7 by punching a flat plate of a lead electrode material. (B) a step of pressing the projections 12 formed on the bottom surfaces of the lead electrodes 2 and 3 in a direction opposite to the punching side by the punching at least upward from the bottom surface. (C) A step of plating the entire surface of the lead electrode matlessly.
【請求項8】 前記無光沢とは次式で表される光沢度D
が0.05〜0.5の範囲にあることを特徴とする請求
項7に記載のLEDランプの製造方法。 D=log(1/R) (但し、Rは、45度方向への反射率であり、R=(反
射光量/入射光量))
8. The glossiness is a glossiness D represented by the following formula:
Is in the range of 0.05 to 0.5, the method of manufacturing an LED lamp according to claim 7, wherein D = log (1 / R) (where R is the reflectance in the 45-degree direction, and R = (reflected light quantity / incident light quantity))
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US7029935B2 (en) 2003-09-09 2006-04-18 Cree, Inc. Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same
US7183587B2 (en) 2003-09-09 2007-02-27 Cree, Inc. Solid metal block mounting substrates for semiconductor light emitting devices
US7304694B2 (en) 2005-01-12 2007-12-04 Cree, Inc. Solid colloidal dispersions for backlighting of liquid crystal displays
US7317181B2 (en) 2001-12-07 2008-01-08 Hitachi Cable, Ltd. Light-emitting unit and method for producing same as well as lead frame used for producing light-emitting unit
US7322732B2 (en) 2004-12-23 2008-01-29 Cree, Inc. Light emitting diode arrays for direct backlighting of liquid crystal displays
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US8441179B2 (en) 2006-01-20 2013-05-14 Cree, Inc. Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources
US8466611B2 (en) 2009-12-14 2013-06-18 Cree, Inc. Lighting device with shaped remote phosphor
US8772817B2 (en) 2010-12-22 2014-07-08 Cree, Inc. Electronic device submounts including substrates with thermally conductive vias
US9608166B2 (en) 2003-08-14 2017-03-28 Cree, Inc. Localized annealing of metal-silicon carbide ohmic contacts and devices so formed
US9841175B2 (en) 2012-05-04 2017-12-12 GE Lighting Solutions, LLC Optics system for solid state lighting apparatus
US9951938B2 (en) 2009-10-02 2018-04-24 GE Lighting Solutions, LLC LED lamp
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