JP2001019833A - Epoxy resin composition and semiconductor device - Google Patents
Epoxy resin composition and semiconductor deviceInfo
- Publication number
- JP2001019833A JP2001019833A JP11191891A JP19189199A JP2001019833A JP 2001019833 A JP2001019833 A JP 2001019833A JP 11191891 A JP11191891 A JP 11191891A JP 19189199 A JP19189199 A JP 19189199A JP 2001019833 A JP2001019833 A JP 2001019833A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- resin composition
- carbon black
- particle size
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003822 epoxy resin Substances 0.000 title claims abstract description 39
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 39
- 239000000203 mixture Substances 0.000 title claims abstract description 26
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 239000006229 carbon black Substances 0.000 claims abstract description 32
- 239000002245 particle Substances 0.000 claims abstract description 16
- 239000005011 phenolic resin Substances 0.000 claims abstract description 8
- 239000011256 inorganic filler Substances 0.000 claims abstract description 6
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 6
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 4
- 229920001568 phenolic resin Polymers 0.000 claims description 3
- 235000019241 carbon black Nutrition 0.000 description 27
- 239000011342 resin composition Substances 0.000 description 7
- 238000009413 insulation Methods 0.000 description 6
- 229920003986 novolac Polymers 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 5
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 239000012778 molding material Substances 0.000 description 4
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 4
- 239000006087 Silane Coupling Agent Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000013329 compounding Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 239000003063 flame retardant Substances 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 150000002989 phenols Chemical class 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 229920002545 silicone oil Polymers 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- URYAFVKLYSEINW-UHFFFAOYSA-N Chlorfenethol Chemical compound C=1C=C(Cl)C=CC=1C(O)(C)C1=CC=C(Cl)C=C1 URYAFVKLYSEINW-UHFFFAOYSA-N 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 235000013869 carnauba wax Nutrition 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- -1 dicyclopentadiene modified phenol Chemical class 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- 238000007580 dry-mixing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
- 150000003918 triazines Chemical class 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
(57)【要約】
【課題】 二次的に生成するカーボンブラック凝集物を
大幅に減少することができるエポキシ樹脂組成物を提供
すること。
【解決手段】 エポキシ樹脂、フェノール樹脂、無機充
填材、硬化促進剤、及び45μm以上が500ppm以
下で、かつその最大粒径が500μm以下であるカーボ
ンブラックを必須成分とするエポキシ樹脂組成物であっ
て、全エポキシ樹脂組成物中に該カーボンブラックを
0.1〜1.0重量%含有することを特徴とする半導体
封止用エポキシ樹脂組成物。(57) [Problem] To provide an epoxy resin composition capable of significantly reducing secondary carbon black aggregates. An epoxy resin composition comprising an epoxy resin, a phenol resin, an inorganic filler, a curing accelerator, and carbon black having an average particle size of not more than 45 μm and not more than 500 ppm and a maximum particle size of not more than 500 μm. An epoxy resin composition for encapsulating a semiconductor, comprising 0.1 to 1.0% by weight of the carbon black in all epoxy resin compositions.
Description
【0001】[0001]
【発明の属する技術分野】本発明は、半導体装置内部で
のインナーリード間、ワイヤー間のリーク性や導電性を
防止するための半導体封止用エポキシ樹脂組成物及びこ
れを用いた半導体装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin composition for semiconductor encapsulation for preventing leakage and conductivity between inner leads and between wires inside a semiconductor device, and a semiconductor device using the same. It is.
【0002】[0002]
【従来の技術】従来より半導体装置を封止するためのエ
ポキシ樹脂組成物には、カーボンブラックが使用されて
きた。しかしながら、その主たる目的としては、硬化後
の成形品を着色することであり、要求される成形品の色
合いにより、カーボンブラックの種類と添加量を適宜決
めて配合していた。この着色剤としてのカーボンブラッ
クの平均粒径は、10〜100nmと小さいものの、単
体としては存在しなく、ある程度の数のカーボンブラッ
クが凝集して存在しており、その凝集物の最大粒径は、
銘柄によって異なるが0.1μm程度から最大5mm程
度のものまでが混在しており、まちまちである。2. Description of the Related Art Conventionally, carbon black has been used in epoxy resin compositions for encapsulating semiconductor devices. However, the main purpose is to color the molded product after curing, and the type and amount of carbon black are appropriately determined and blended according to the required color of the molded product. Although the average particle size of the carbon black as a colorant is as small as 10 to 100 nm, it does not exist as a single substance, and a certain number of carbon blacks are present in agglomerated form. ,
Although varying depending on the brand, a range of about 0.1 μm to a maximum of about 5 mm is mixed and varies.
【0003】一方、半導体封止用エポキシ樹脂組成物の
製造方法としては、通常エポキシ樹脂、フェノール樹
脂、硬化促進剤、無機充填材、カーボンブラック、シラ
ンカップリング剤、シリコーンオイル等の各成分をミキ
サー等で乾式混合した後、ミキシングロール、コニーダ
ー等で溶融混練しているが、得られたエポキシ樹脂組成
物中には用いたカーボンブラックよりも粒径が大きい二
次的に生成したカーボンブラックの凝集物が存在するこ
とがあり、近年の半導体装置のファインピッチ化に伴
い、インナーリード間やワイヤー間の間隙が加速的に狭
くなり、それらの間隙にカーボンブラックの凝集物が入
り、リーク性や導電性に問題が生じており、ファインピ
ッチ化に対応可能なカーボンブラック凝集物に起因する
不良の発生しないエポキシ樹脂組成物が要求されてい
る。On the other hand, as a method for producing an epoxy resin composition for semiconductor encapsulation, each component such as an epoxy resin, a phenol resin, a curing accelerator, an inorganic filler, carbon black, a silane coupling agent, and silicone oil is usually mixed. After dry-mixing, etc., the mixture is melt-kneaded with a mixing roll, a co-kneader, etc., but in the obtained epoxy resin composition, agglomeration of secondary generated carbon black having a larger particle size than the used carbon black In recent years, with the fine pitch of semiconductor devices, gaps between inner leads and wires have been rapidly narrowed, and aggregates of carbon black have entered these gaps, resulting in leakage and conductivity. Problems due to carbon black agglomerates that can respond to fine pitch A resin composition is required.
【0004】[0004]
【発明が解決しようとする課題】本発明は、絶縁信頼性
に悪影響を及ぼすカーボンブラックの凝集物の大きさと
その量に着目し、鋭意研究した結果、エポキシ樹脂組成
物に存在する二次的に生成するカーボンブラック凝集物
を大幅に少なくできることを見出し本発明を完成したも
のである。DISCLOSURE OF THE INVENTION The present invention focuses on the size and amount of carbon black agglomerates that have an adverse effect on insulation reliability, and as a result of intensive studies, as a result, the secondary The inventors have found that carbon black agglomerates generated can be significantly reduced, and have completed the present invention.
【0005】[0005]
【課題を解決するための手段】本発明は、(A)エポキ
シ樹脂、(B)フェノール樹脂、(C)無機充填材、
(D)硬化促進剤、及び(E)45μm以上が500p
pm以下で、かつその最大粒径が500μm以下である
カーボンブラックを必須成分とするエポキシ樹脂組成物
であって、全エポキシ樹脂組成物中に該カーボンブラッ
クを0.1〜1.0重量%含有することを特徴とする半
導体封止用エポキシ樹脂組成物及び該エポキシ樹脂組成
物で半導体素子を封止してなることを特徴とする半導体
装置である。The present invention provides (A) an epoxy resin, (B) a phenolic resin, (C) an inorganic filler,
(D) curing accelerator, and (E) 45 μm or more is 500p
1. An epoxy resin composition containing carbon black having an average particle size of not more than pm and a maximum particle size of not more than 500 μm, wherein said epoxy resin composition contains 0.1 to 1.0% by weight of said carbon black in all epoxy resin compositions. An epoxy resin composition for semiconductor encapsulation and a semiconductor device obtained by encapsulating a semiconductor element with the epoxy resin composition.
【0006】[0006]
【発明の実施の形態】本発明に用いるエポキシ樹脂は、
1分子中に2個以上のエポキシ基を有するモノマー、オ
リゴマー、ポリマーならば、特に限定されるものではな
い。例えば、ビスフェノール型エポキシ樹脂、ビフェニ
ル型エポキシ樹脂、フェノールノボラック型エポキシ樹
脂、オルソクレゾールノボラック型エポキシ樹脂、ナフ
タレン型エポキシ樹脂、トリフェノールメタン型エポキ
シ樹脂、ジシクロペンタジエン変性フェノール型エポキ
シ樹脂、トリアジン核含有エポキシ樹脂等が挙げられ
る。樹脂組成物の耐湿性向上のためには、不純物として
Clイオン、Naイオン等の不純物イオンが極力少ない
ことが望ましく、又硬化性の点からエポキシ当量として
は、150〜300g/eqが好ましい。DESCRIPTION OF THE PREFERRED EMBODIMENTS The epoxy resin used in the present invention is:
It is not particularly limited as long as it is a monomer, oligomer, or polymer having two or more epoxy groups in one molecule. For example, bisphenol type epoxy resin, biphenyl type epoxy resin, phenol novolak type epoxy resin, orthocresol novolak type epoxy resin, naphthalene type epoxy resin, triphenolmethane type epoxy resin, dicyclopentadiene modified phenol type epoxy resin, epoxy containing triazine nucleus Resins. In order to improve the moisture resistance of the resin composition, it is desirable that impurity ions such as Cl ions and Na ions are as small as possible, and the epoxy equivalent is preferably 150 to 300 g / eq from the viewpoint of curability.
【0007】本発明に用いるフェノール樹脂は、1分子
中に2個以上のフェノール性水酸基を有するモノマー、
オリゴマー、ポリマーならば、特に限定されるものでは
ない。例えば、フェノールノボラック樹脂、クレゾール
ノボラック樹脂、ジシクロペンタジエン変性フェノール
樹脂、フェノールアラルキル樹脂、テルペン変性フェノ
ール樹脂等が挙げられる。又硬化性の点から水酸基当量
としては、80〜250g/eqが好ましい。本発明に
用いる無機充填材として、溶融シリカ、結晶シリカ、ア
ルミナ等が挙げられる。無機充填材の配合量としては、
成形性と信頼性のバランスから、全エポキシ樹脂組成物
中60〜92重量%が好ましい。本発明に用いる硬化促
進剤は、エポキシ基と水酸基の反応を促進するものであ
ればよく、一般に封止材料に使用されているものを利用
することができる。例えば、1,8−ジアザビシクロ
(5,4,0)ウンデセン−7、トリフェニルホスフィ
ン、ベンジルジメチルアミン、2−メチルイミダゾール
等が挙げられる。The phenolic resin used in the present invention is a monomer having two or more phenolic hydroxyl groups in one molecule,
It is not particularly limited as long as it is an oligomer or a polymer. For example, phenol novolak resin, cresol novolak resin, dicyclopentadiene-modified phenol resin, phenol aralkyl resin, terpene-modified phenol resin and the like can be mentioned. From the viewpoint of curability, the hydroxyl equivalent is preferably from 80 to 250 g / eq. Examples of the inorganic filler used in the present invention include fused silica, crystalline silica, and alumina. As the compounding amount of the inorganic filler,
From the balance of moldability and reliability, 60 to 92% by weight of the total epoxy resin composition is preferable. The curing accelerator used in the present invention may be any one that promotes the reaction between an epoxy group and a hydroxyl group, and those generally used for a sealing material can be used. For example, 1,8-diazabicyclo (5,4,0) undecene-7, triphenylphosphine, benzyldimethylamine, 2-methylimidazole and the like can be mentioned.
【0008】本発明に用いるカーボンブラックは、45
μm以上が500ppm以下で、かつその最大粒径が5
00μm以下で、全エポキシ樹脂組成物中に0.1〜
1.0重量%含有するものである。45μm以上が50
0ppmを越えるか、又は500ppm未満でもその最
大粒径が500μmを越えると、全エポキシ樹脂組成物
中のカーボンブラックの配合量が、0.1重量%でもリ
ーク不良や導電不良等の絶縁信頼性に問題が発生する。
又、カーボンブラックの配合量が全エホキシ樹脂組成物
中1.0重量%を越えると二次凝集物の発生確率が高く
なり、リーク不良や導電不良等の絶縁信頼性に問題が発
生する。本発明に用いるカーボンブラックの45μm以
上の粒度は、Tyler標準篩325メッシュ(目開き
45μm)を用い、カーボンブラック約50gを精秤
し、水洗しながら篩い分けを行った後乾燥し、その篩い
残分とする。又最大粒径の測定方法は、形状が不定形で
あるため長辺方向の最大値を最大粒径とし顕微鏡観察に
より測定した。本発明で用いるカーボンブラックは、前
記の特性を有するものであれば形状等について特に限定
されるものではないが、樹脂組成物中に均一に分散され
るためには粉体が好ましい。又、これらの粒子は造粒さ
れたものであっても容易にほぐれる形状のものであれば
特に問題はない。前記特性のカーボンブラックを用いる
ことにより、樹脂組成物の製造時に二次的に生成するカ
ーボンブラック凝集物を大幅に減少できるので、この樹
脂組成物で封止された半導体装置内部の絶縁信頼性を向
上することができる。The carbon black used in the present invention is 45
μm or more is 500 ppm or less and the maximum particle size is 5
00 μm or less, 0.1 to 0.1 in the total epoxy resin composition
It contains 1.0% by weight. 50 for 45 μm or more
If the maximum particle size exceeds 0 ppm or even if it is less than 500 ppm and the maximum particle size exceeds 500 μm, even if the compounding amount of carbon black in the total epoxy resin composition is 0.1% by weight, the insulation reliability such as leak failure and conduction failure is reduced. Problems arise.
On the other hand, if the amount of carbon black exceeds 1.0% by weight in the total ethoxy resin composition, the probability of occurrence of secondary agglomerates increases, and there is a problem in insulation reliability such as leakage failure and conduction failure. For the particle size of carbon black of 45 μm or more used in the present invention, about 50 g of carbon black is accurately weighed using a Tyler standard sieve 325 mesh (mesh size 45 μm), sieved while washing with water, dried, and the sieved residue is removed. Minutes. The maximum particle size was measured by microscopic observation with the maximum value in the long side direction as the maximum particle size because the shape was irregular. The shape and the like of the carbon black used in the present invention are not particularly limited as long as the carbon black has the above-mentioned properties, but powder is preferable in order to be uniformly dispersed in the resin composition. Further, even if these particles are granulated, there is no particular problem as long as they are easily loosened. By using carbon black having the above characteristics, carbon black agglomerates that are secondarily generated during the production of the resin composition can be significantly reduced, so that the insulation reliability inside the semiconductor device sealed with this resin composition is reduced. Can be improved.
【0009】本発明は(A)〜(E)成分を必須とする
が、これ以外に必要に応じてシランカップリング剤、難
燃剤、難燃助剤、離型剤、及びシリコーン系や合成ゴム
系の低応力剤等の種々の添加剤を適宜配合しても差し支
えない。又、本発明のエポキシ樹脂組成物を製造するに
は、(A)〜(E)成分及びその他の添加剤をミキサー
により混合した後、更に熱ロールやニーダー等で溶融混
練し冷却後粉砕して封止材料とすることができる。本発
明の樹脂組成物を用いて、半導体素子を封止し、半導体
装置を製造するには、トランスファーモールド、コンプ
レッションモールド、インジェクションモールド等の成
形方法で硬化成形すればよい。In the present invention, the components (A) to (E) are essential, but if necessary, a silane coupling agent, a flame retardant, a flame retardant auxiliary, a release agent, and a silicone or synthetic rubber Various additives such as a system low stress agent may be appropriately compounded. In order to produce the epoxy resin composition of the present invention, the components (A) to (E) and other additives are mixed by a mixer, melt-kneaded by a hot roll or a kneader, cooled, and ground. It can be a sealing material. In order to manufacture a semiconductor device by encapsulating a semiconductor element using the resin composition of the present invention, a semiconductor device may be cured by a molding method such as transfer molding, compression molding, or injection molding.
【0010】[0010]
【実施例】以下、本発明を実施例にて具体的に説明す
る。 実施例1 オルソクレゾールノボラック型エポキシ樹脂(軟化点62℃、エポキシ当量2 00) 150重量部 フェノールノボラック樹脂(軟化点95℃、水酸基当量100) 80重量部 臭素化エポキシ樹脂(臭素含有量49重量%、軟化点70℃) 20重量部 溶融シリカ粉末 700重量部 三酸化アンチモン 10重量部 カルナバワックス 5重量部 シリコーンオイル 5重量部 シランカップリング剤 3重量部 1,8−ジアザビシクロ(5,4,0)ウンデセン−7(以下、DBUという ) 3重量部 カーボンブラックA(45μm以上、200ppm。最大粒径140μm) 4重量部 をミキサーにて常温混合し、80〜110℃で二軸混練
機により混練し、冷却後粉砕し、成形材料とした。評価
結果を表1に示す。The present invention will be specifically described below with reference to examples. Example 1 Orthocresol novolak type epoxy resin (softening point 62 ° C, epoxy equivalent 200) 150 parts by weight Phenol novolak resin (softening point 95 ° C, hydroxyl equivalent 100) 80 parts by weight Brominated epoxy resin (bromine content 49% by weight) , Softening point 70 ° C) 20 parts by weight Fused silica powder 700 parts by weight Antimony trioxide 10 parts by weight Carnauba wax 5 parts by weight Silicone oil 5 parts by weight Silane coupling agent 3 parts by weight 1,8-diazabicyclo (5,4,0) Undecene-7 (hereinafter referred to as DBU) 3 parts by weight Carbon black A (45 μm or more, 200 ppm; maximum particle size 140 μm) 4 parts by weight were mixed at room temperature with a mixer, and kneaded at 80 to 110 ° C. with a biaxial kneader. After cooling, it was pulverized to obtain a molding material. Table 1 shows the evaluation results.
【0011】評価方法 カーボンブラック凝集物:得られた成形材料をタブレッ
ト化し、低圧トランスファー成形機にて175℃、 7
0kg/cm2、120秒の条件にて成形し100φ
(厚み2mm)の成形品を得た。得られた成形品を粒度
(GRIT No.180)の耐水研磨紙にて表面から
0.2〜0.3mm研磨した面のカーボンブラックの凝
集物の数を数える。成形品の数は、10個。成形品10
個を観察し50〜100μmの凝集物が合計3個以上、
100μmを越える凝集物が合計1個以上を不良と判定
した。 外観色:成形品の外観を目視により検査し、斑状になっ
ているもの、灰色のものを不良と判定した。Evaluation method Carbon black agglomerate: The obtained molding material is tableted, and is subjected to low pressure transfer molding at 175 ° C. at 7 ° C.
Molded under the conditions of 0 kg / cm 2 and 120 seconds, 100φ
(Thickness: 2 mm) was obtained. The number of aggregates of carbon black on the surface of the obtained molded article polished from the surface by 0.2 to 0.3 mm with a water-resistant abrasive paper having a particle size (GRIT No. 180) is counted. The number of molded products is 10. Molded product 10
Observation of 50 to 100 μm aggregates total 3 or more,
One or more aggregates exceeding 100 μm were judged to be defective. Appearance color: The appearance of the molded article was visually inspected, and a patchy one and a gray one were judged to be defective.
【0012】実施例2〜5 表1の処方に従って配合し、実施例1と同様にして成形
材料を得、同様に評価した。評価結果を表1に示す。 比較例1〜4 表2の処方に従って配合し、実施例1と同様にして成形
材料を得、同様に評価した。評価結果を表2に示す。な
お、実施例、比較例に用いたカーボンブラックの特性を
表3に示す。実施例1以外で用いた、エポキシ樹脂、フ
ェノール樹脂の特性は以下の通りである。ビフェニル型
エポキシ樹脂(融点106℃、エポキシ当量195)、
ジシクロペンタジエン変性フェノール型エポキシ樹脂
(以下、DCPEという)(軟化点60℃、エポキシ当
量260)、パラキシリレン変性フェノール樹脂(軟化
点80℃、水酸基当量170)。Examples 2 to 5 Compounded according to the formulation shown in Table 1, a molding material was obtained in the same manner as in Example 1, and evaluated similarly. Table 1 shows the evaluation results. Comparative Examples 1 to 4 The components were blended according to the formulation shown in Table 2, and a molding material was obtained in the same manner as in Example 1 and evaluated in the same manner. Table 2 shows the evaluation results. Table 3 shows the properties of the carbon blacks used in the examples and comparative examples. The properties of the epoxy resin and phenol resin used in other than Example 1 are as follows. Biphenyl type epoxy resin (melting point: 106 ° C., epoxy equivalent: 195),
Dicyclopentadiene-modified phenolic epoxy resin (hereinafter referred to as DCPE) (softening point: 60 ° C., epoxy equivalent: 260), paraxylylene-modified phenolic resin (softening point: 80 ° C., hydroxyl equivalent: 170).
【0013】[0013]
【表1】 [Table 1]
【0014】[0014]
【表2】 [Table 2]
【0015】[0015]
【表3】 [Table 3]
【0016】[0016]
【発明の効果】本発明によると、絶縁信頼性に悪影響を
及ぼす二次的に生成するカーボンブラック凝集物を大幅
に減少することができ、これで封止された半導体装置内
部の絶縁信頼性を向上できる。According to the present invention, it is possible to greatly reduce the secondary carbon black aggregates which adversely affect the insulation reliability, thereby reducing the insulation reliability inside the sealed semiconductor device. Can be improved.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H01L 23/31 Fターム(参考) 4J002 CC04X CC05X CC07X CD04W CD05W CD06W CD07W CD13W CD20W CE00X DA038 DE146 DJ016 EN027 EU017 EU117 EW017 FA088 FD016 FD14X FD157 GJ02 GQ05 4M109 AA01 BA01 CA21 EA02 EB03 EB04 EB08 EB12 EC07 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01L 23/31 F-term (Reference) 4J002 CC04X CC05X CC07X CD04W CD05W CD06W CD07W CD13W CD20W CE00X DA038 DE146 DJ016 EN027 EU017 EU117 EW017 FA088 FD016 FD14X FD157 GJ02 GQ05 4M109 AA01 BA01 CA21 EA02 EB03 EB04 EB08 EB12 EC07
Claims (2)
樹脂、(C)無機充填材、(D)硬化促進剤、及び
(E)45μm以上が500ppm以下で、かつその最
大粒径が500μm以下であるカーボンブラックを必須
成分とするエポキシ樹脂組成物であって、全エポキシ樹
脂組成物中に該カーボンブラックを0.1〜1.0重量
%含有することを特徴とする半導体封止用エポキシ樹脂
組成物。1. (A) an epoxy resin, (B) a phenolic resin, (C) an inorganic filler, (D) a curing accelerator, and (E) 45 μm or more of 500 ppm or less, and a maximum particle size of 500 μm or less. An epoxy resin composition comprising carbon black as an essential component, wherein said epoxy resin composition contains 0.1 to 1.0% by weight of said carbon black in all epoxy resin compositions. Composition.
導体素子を封止してなることを特徴とする半導体装置。2. A semiconductor device comprising a semiconductor element encapsulated with the epoxy resin composition according to claim 1.
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1352930A2 (en) | 2002-02-07 | 2003-10-15 | Toda Kogyo Corporation | Black composite particles for semiconductor sealing material, and semiconductor sealing material using the same |
US7540986B2 (en) | 2004-03-29 | 2009-06-02 | Fujifilm Corporation | Solution casting method and polymer film |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0656970A (en) * | 1992-08-07 | 1994-03-01 | Toshiba Chem Corp | Epoxy resin composition and semiconductor device sealed therewith |
JPH0841291A (en) * | 1994-07-27 | 1996-02-13 | Sumitomo Bakelite Co Ltd | Resin composition |
JPH1067918A (en) * | 1996-06-17 | 1998-03-10 | Toray Ind Inc | Resin composition |
JP2000007894A (en) * | 1998-06-24 | 2000-01-11 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
JP2001002895A (en) * | 1999-06-22 | 2001-01-09 | Hitachi Chem Co Ltd | Preparation of semiconductor sealing material and resin- sealed semiconductor device |
-
1999
- 1999-07-06 JP JP19189199A patent/JP4505888B2/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0656970A (en) * | 1992-08-07 | 1994-03-01 | Toshiba Chem Corp | Epoxy resin composition and semiconductor device sealed therewith |
JPH0841291A (en) * | 1994-07-27 | 1996-02-13 | Sumitomo Bakelite Co Ltd | Resin composition |
JPH1067918A (en) * | 1996-06-17 | 1998-03-10 | Toray Ind Inc | Resin composition |
JP2000007894A (en) * | 1998-06-24 | 2000-01-11 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
JP2001002895A (en) * | 1999-06-22 | 2001-01-09 | Hitachi Chem Co Ltd | Preparation of semiconductor sealing material and resin- sealed semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1352930A2 (en) | 2002-02-07 | 2003-10-15 | Toda Kogyo Corporation | Black composite particles for semiconductor sealing material, and semiconductor sealing material using the same |
US7540986B2 (en) | 2004-03-29 | 2009-06-02 | Fujifilm Corporation | Solution casting method and polymer film |
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JP4505888B2 (en) | 2010-07-21 |
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