JP2001011653A - Thin film forming method and thin film forming apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a thin film forming method and a thin film forming apparatus for forming a uniform thin film with high reproducibility and high efficiency on a large area substrate sequentially transferred to a thin film forming apparatus. . [Solution Solution] In a thin film forming method of forming a thin film by atomizing a raw material solution and spraying the raw material solution on a substrate, the frequency of an ultrasonic vibrator is controlled while monitoring the amount of the finely divided raw material solution. The raw material solution sprayed on is kept constant. In forming a film, the film is formed while rotating the substrate. Further, only when the substrate is transported and placed at a predetermined film forming position, the finely divided raw material solution is sprayed onto the substrate.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film forming method and a thin film forming apparatus in which a raw material solution is atomized and sprayed on a substrate to form a film.

[0002]

2. Description of the Related Art As a method for forming a uniform thin film on a large-area substrate used for manufacturing a solar cell or the like, a method of forming a thin film by atomizing a raw material solution by ultrasonic vibration and spraying the fine particle on a substrate is used. Is used.

FIG. 7 is a schematic view of a fine particle forming apparatus constituting a conventional thin film forming apparatus. The raw material solution 50 put in the supply tank 48 is introduced into the atomization tank 45 by the pump 47. In the atomization tank 45, the raw material solution 50 is atomized by the ultrasonic vibrator 46, and is guided to the reaction device (see FIG. 8) from the outlet 50 together with the carrier gas introduced through the flow meter 49.

FIG. 8 is a schematic view of a conventional thin film forming apparatus. The raw material solution 50 that has been micronized sent from the micronization device 40 is guided to the reaction device 42 while being heated by the microparticle heating heater 41, and is sprayed onto the substrate 43 heated by the substrate heating heater 44. Thus, a thin film is formed on the substrate 43. The substrate 43 can be transported in a predetermined direction.

[0005]

However, in such a method, since the amount of fine particles decreases with the lapse of time due to deterioration of the ultrasonic vibrator, the supply amount of the finely divided raw material solution onto the substrate also increases with the lapse of time. There is a problem that the film thickness decreases and the formed film thickness gradually decreases. Further, since the raw material solution in the form of fine particles is supplied to the substrate from only one direction, there is also a problem that the film thickness varies along the substrate transport direction. In addition, since the raw material solution in the form of fine particles is constantly supplied to the substrate conveyed at a constant interval, there is also a problem that the ratio of fine particles contributing to the formation of a thin film on the substrate is low. Was. Accordingly, an object of the present invention is to provide a thin film forming method and a thin film forming apparatus for forming a uniform thin film with good reproducibility and high efficiency on a large-area substrate sequentially transferred to the thin film forming apparatus. I do.

[0006]

Therefore, as a result of diligent research, the inventors have rotated the substrate by controlling the frequency of the ultrasonic vibrator while monitoring the amount of the micronized raw material solution. As a result, it has been found that the above object can be achieved by intermittently supplying the raw material material in the form of fine particles, and the present invention has been completed.

That is, the present invention is a thin film forming method for forming a thin film by atomizing a raw material solution and spraying the raw material solution on a substrate. A transportation step of transporting the raw material solution,
A film forming step of spraying the finely divided raw material solution onto a heated substrate through a nozzle to form a thin film, wherein the film forming step detects a distance between a tip of the nozzle and a surface of the substrate. And a step of maintaining the distance constant. As described above, by controlling the distance between the tip of the nozzle and the substrate surface to be constant, it is possible to form a thin film with uniform film quality and thickness with good reproducibility when sequentially forming a film on a plurality of substrates. Can be. Adjustment of the distance between the tip of the nozzle and the substrate surface is performed by adjusting the height of the substrate or the position of the nozzle.

The present invention also relates to a thin film forming method for forming a thin film by atomizing a raw material solution and spraying the fine particle on a substrate. The fine particle forming step comprises applying vibration to the raw material solution to obtain fine particles. A transportation step of transporting the raw material solution,
Forming a thin film by spraying the finely divided raw material solution onto a heated substrate through a nozzle; and forming the thin film in the fine particle forming tank provided with an ultrasonic vibrator. Applying the ultrasonic vibration to the raw material solution by the ultrasonic vibrator to micronize the raw material solution, and supplying the raw material solution in the micronization tank so that the amount of the raw material solution is kept constant. And supplying the raw material solution to the micronization tank, and detecting a reduction rate of the raw material solution in the supply tank and controlling the frequency of the ultrasonic vibrator so that the reduction rate becomes constant. And a step of forming a thin film. Generally, the ultrasonic vibrator deteriorates with time, and the generated ultrasonic vibration frequency becomes low. When the raw material solution is supplied in a mist state by the ultrasonic vibration, the supply amount gradually decreases, and the formed thin film is formed. The thickness tends to be thin. Therefore, as in the present invention, by controlling the frequency of the ultrasonic vibrator so that the reduction rate of the raw material solution in the supply tank is constant, the supply amount of the finely divided raw material solution does not fluctuate. Since it can be controlled to a certain amount, the thickness of the formed thin film can be made uniform.

The step of controlling the frequency of the ultrasonic vibrator includes the step of measuring the weight of the supply tank and controlling the frequency of the ultrasonic vibrator so that the rate of decrease in the weight is constant. It is preferred that By measuring the weight of the supply tank with, for example, a balance, the reduction rate of the raw material solution in the supply tank can be easily measured.

The present invention also relates to a thin film forming method for forming a thin film by atomizing a raw material solution and spraying the raw material solution on a substrate. A transportation step of transporting the raw material solution,
A film forming step of spraying the finely divided raw material solution onto a heated substrate through a nozzle to form a thin film, wherein the film forming step is a step of moving the substrate, and only for a predetermined period, Spraying the raw material solution from the nozzle onto the substrate. By moving the substrate, for example, by supplying the raw material solution from the nozzle for a predetermined period while the center of the substrate is below the nozzle, effectively using the supplied raw material solution for forming a thin film Can be. Thereby, the use efficiency of the raw material solution is improved, and the production cost can be reduced.

The present invention also relates to a thin film forming method for forming a thin film by atomizing a raw material solution and spraying the raw material solution on a substrate. A transportation step of transporting the raw material solution,
Forming a thin film by spraying the finely divided raw material solution onto a heated substrate through a nozzle, wherein the film forming step includes rotating the substrate in a plane of the substrate. And a method for forming a thin film. By rotating the substrate in a plane, the uniformity of the film thickness and film quality in the substrate can be improved.

It is preferable that the film forming step includes levitation means for sending gas from below the substrate to bring the substrate into a floating state, and to move and / or rotate the substrate. A substrate used for a solar cell or the like is large in size, but can be easily moved and rotated by sending gas from below the substrate to float the substrate.

The thin film is preferably a transparent conductive film or a dielectric film of a plasma display panel. The method of the present invention is particularly suitable for forming a transparent conductive film or a dielectric film of a plasma display panel that requires a uniform thin film to be formed on a large substrate.

The present invention also relates to a thin film forming apparatus for forming a thin film by spraying a finely divided raw material solution onto a substrate, wherein the raw material solution is vibrated to be finely divided. A transportation means for transporting the micronized raw material solution, and a nozzle connected to the transportation means, the micronized raw material solution is sprayed on a heated substrate to form a thin film. And a reaction device,
The reaction device, detecting means for detecting the distance between the tip of the nozzle and the substrate surface, based on the detection result of the detecting means,
Adjusting means for adjusting the distance to be constant. By using such an apparatus, a thin film having uniform film quality and thickness can be formed with good reproducibility.

The present invention also relates to a thin film forming apparatus for forming a thin film by spraying a finely divided raw material solution onto a substrate, wherein the raw material solution is vibrated to be finely divided. A transportation means for transporting the micronized raw material solution, and a nozzle connected to the transportation means, the micronized raw material solution is sprayed on a heated substrate to form a thin film. And a reaction device,
The atomization device is a container provided with an ultrasonic vibrator, wherein a raw material solution in the container is subjected to ultrasonic vibration to be atomized, and a fine particle forming tank is provided. A supply tank for supplying the raw material solution to the micronization tank so that the amount is maintained at a constant amount, and a supply tank for detecting a reduction rate of the raw material solution in the supply tank so that the reduction rate becomes constant. Control means for controlling the frequency of the ultrasonic vibrator. By using such an apparatus, it is possible to prevent the supply amount of the finely divided raw material solution from changing over time.

Preferably, the control means is a control means for measuring the weight of the supply tank and controlling the frequency of the ultrasonic vibrator so that the reduction rate of the weight is constant.

The present invention also relates to a thin film forming apparatus for forming a thin film by spraying a finely divided raw material solution onto a substrate, wherein the raw material solution is vibrated to be finely divided. A transportation means for transporting the micronized raw material solution, and a nozzle connected to the transportation means, the micronized raw material solution is sprayed on a heated substrate to form a thin film. And a reaction device,
The thin film forming apparatus is also characterized in that the reaction device includes a moving means for moving the substrate, and a blowing means for blowing the raw material solution from the nozzle to the substrate for a predetermined period. By using such an apparatus, it is possible to improve the use efficiency of the raw material solution.

The present invention also relates to a thin film forming apparatus for forming a thin film by spraying a finely divided raw material solution onto a substrate, wherein the raw material solution is vibrated to be finely divided. A transportation means for transporting the micronized raw material solution, and a nozzle connected to the transportation means, the micronized raw material solution is sprayed on a heated substrate to form a thin film. And a reaction device,
The thin-film forming apparatus is characterized in that the reaction apparatus includes a rotating means for rotating the substrate in a plane of the substrate. By using such an apparatus, the film quality in the substrate,
It is possible to improve the uniformity of the film thickness.

It is preferable that the reaction apparatus includes a levitation means for sending gas from below the substrate to bring the substrate into a floating state, and to move and / or rotate the substrate. This is because the substrate can be moved and rotated with a simple structure.

[0020]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a schematic diagram of a fine particle forming apparatus constituting a thin film forming apparatus according to the present invention. In the figure, reference numeral 1 denotes a micronization tank for storing a raw material solution 2,
An ultrasonic oscillator 3 for applying ultrasonic vibration to the raw material solution 2 is provided on the bottom surface. The raw material solution 2 that has been atomized by the application of ultrasonic vibrations from the ultrasonic vibrator 3 becomes a mist and is sent to the reaction device (see FIG. 2) from the particle outlet 5 together with the carrier gas supplied via the flow meter 4. Can be

Reference numeral 6 denotes a supply tank for supplying the raw material solution 2 to the particle forming tank 1. The raw material solution 2 in the supply tank 6 is supplied to the atomization tank 1 by the pump 7. An overflow pipe 8 is provided in the atomization tank 1, and the excessively supplied raw material solution 2 returns from the overflow pipe 8 to the supply tank 6, and the amount of the raw material solution 2 in the micronization tank 1 is always kept constant. It is supposed to be. By measuring the weight loss of the raw material solution 2 in the supply tank 6 using the balance 9, the weight of the raw material solution 2 moved from the supply tank 6 to the micronization tank 1, that is, the raw material solution 2 becomes mist from the micronization tank 1. The weight of the fed raw material solution 2 can be detected.

Therefore, when the atomization speed is reduced due to deterioration of the ultrasonic vibrator 3 or the like, a signal from the balance 9 is detected, and the driving circuit 1 of the ultrasonic vibrator 3 is
By controlling 1, the drive voltage of the ultrasonic vibrator 3 can be regulated so as to always obtain a predetermined atomization speed. Thus, the raw material solution 2 can be obtained at a constant rate of atomization without being affected by the deterioration of the ultrasonic vibrator 3 or the like.

A main tank 12 for storing the raw material solution 2 is provided outside the supply tank 6, and when the raw material solution 2 in the supply tank 6 decreases, the raw solution 2 in the main tank 12 is pumped.
3 and is supplied to the supply tank 2. The supply tank 2 is provided with liquid level sensors 14 and 15, and a control circuit 16 drives a pump 13 based on a signal from the sensor to measure the amount of the raw material solution 2 in the supply tank 6. Is managed.

FIG. 2 is a schematic view of a reactor constituting a thin film forming apparatus according to the present invention. In the figure, reference numeral 17 denotes a classifier, in which the coarse particles of the micronized raw material solution 2 sent from the micronization apparatus (see FIG. 1) adhere to the wall surface by centrifugal force and are discharged out of the system. Only the remaining particles are sent to the pressure buffer 18. The raw material solution 2 sent to the pressure buffer 18 diffuses substantially uniformly inside the pressure buffer 18, and the pressure of the carrier gas is reduced.

The fine particle solution 2 is pressure-relieved inside the pressure buffer 18 and is introduced into a fine particle spray nozzle 31 provided in the reactor 19. Nozzle 31
Inside, the flow rate and flow rate can be controlled independently. The reaction device 19 is provided with a temperature controller 20 so that the temperature of the finely divided raw material solution 2 in the nozzle 31 can be controlled. The temperature controller 20 includes a nozzle 31
Temperature sensor 21 for detecting the temperature of the raw material, a heater 22 for heating the raw material solution 2 in the nozzle 31, and a controller 23 for controlling the temperature of the heater 22 for the particle heating based on a signal from the temperature sensor 21. It is composed of

Reference numeral 24 denotes a flotation / rotation device for levitating and rotating the substrate mounting jig 37 on which the substrate 52 is mounted, and a gas discharge plate 25 having a gas discharge port for discharging gas for floating the substrate mounting jig 37. And a gas heating device 26 for heating the discharged gas. The substrate 52 mounted on the substrate mounting jig 37 and carried in from a substrate carrying-in port (not shown) is heated while rotating by the levitation rotating device 24, and is conveyed in a floating state to just below the nozzle 31.

Reference numeral 27 denotes a fine particle spray amount controller.
When the substrate detection sensor 28 detects that the substrate has reached just below the nozzle 31, the flow control valve 35 is opened by the fine particle spray amount controller 29, and the heated substrate 5 is opened.
The raw material solution 2 which has been intermittently atomized is sprayed onto the nozzle 2 by a predetermined spray amount (spray time). Thereby, useless spraying of the raw material solution 2 can be prevented, and the use efficiency of the raw material solution 2 can be improved.

As described above, the raw material solution 2 that has been made fine is sent to the nozzle 31 and sprayed onto the substrate 52 while being heated by the heater 26 for heating fine particles. Then, it is discharged out of the reactor 19. In this manner, the finely divided raw material solution 2 sprayed in the vicinity of the center of the substrate 52 forms a thin film while moving toward the outer peripheral direction of the substrate 52, and finally the remaining raw material solution 2 is discharged to the outlet. Discharged from 36. As a result, a thin film having a uniform thickness can be manufactured at low cost even for a large-area substrate.

Reference numeral 32 denotes a heating board position adjuster for adjusting the distance between the heating board 52 conveyed to the vicinity of the nozzle 31 and the nozzle 31 to a constant value. The position (height) of the substrate 52 is detected by the heating substrate position detection sensor 33 provided near the nozzle 31, and the heating substrate position controller 34 controls the distance between the nozzle 31 and the heating substrate 52 to be constant. The discharge amount of gas for floating the substrate is adjusted by the flow control valve 35. As a result, it is possible to form a thin film having a constant film quality and thickness.

FIG. 3 is a view showing a levitation mechanism of the substrate mounting jig 37 used in the present embodiment. The substrate mounting jig 37 has, for example, a circular shape so as to be easily rotated. A substrate 52 is fixed at the center of the substrate mounting jig 37, and a gas supplied from below is discharged to the outer periphery of the substrate 52 to rotate the substrate mounting jig 37 as shown in FIG. 3. An outlet 38 is provided, and a rotating blade 39 is provided above the discharge roller 38. Discharge port 3
The gas discharged from 8 flows in the direction of the arrow shown in FIG. 3, and is sprayed on the rotating wings 39 to rotate the substrate mounting jig. The number of rotations is, for example, several rpm to
About 10 rpm is preferable.

The present invention relates to a transparent conductive rubber or a compound semiconductor film of a solar cell, a plasma display panel (PD), or the like.
It can be used for forming a transparent conductive film or a derivative protective film of P). Further, the substrate rotating system according to the present invention can be applied to other apparatuses, and can be applied not only to a thin film forming apparatus but also to various coating apparatuses such as a spin coat apparatus.

Hereinafter, a case where a thin film is formed by the method according to the present embodiment and a case where a thin film is formed by a conventional method will be described in comparison.

(Embodiment) In the embodiment of the present invention, an aqueous solution containing 20% by weight of diptiltin tin chloride and 0.5% by weight of hydrofluoric acid was placed as the raw material solution 2 in the micronization apparatus shown in FIG. . The output of the ultrasonic transducer is 100
V, 6 A, 100 kHz, and air as a carrier gas at a flow rate of 700 liter / min. Under these conditions, the amount of raw particles of the raw material solution 2 was about 4 g / min.
The atomizing device includes the classifying device 17 of FIG.
8. Reactor 1 equipped with fine particle spray nozzle 31
9 was connected. The substrate 52 was placed on the substrate mounting jig 37 and rotated at a rotation speed of 15 rotations per minute. Substrate 5
A glass substrate was used for 2 and about 60
The mixture was heated to 0 ° C., and the finely divided raw material solution 2 was sprayed for 4 minutes. At this time, the temperature of the nozzle 31 was heated by the heater 22 so as to be 300 ° C. Nozzle 31 and substrate 52
Was controlled to be 15 mm. Substrate 52
As shown in FIG. 3, a 90 cm × 90 cm square glass substrate was used.

Comparative Example In the comparative example, a thin film forming apparatus having a conventional structure shown in FIGS. 6 and 7 was used in place of the apparatus shown in FIGS. 1 and 2 used in the above embodiment. The frequency of the ultrasonic oscillator 46, the temperature of the heater 41 for heating the fine particles, the temperature of the substrate 43, and the like were set in the same manner as in the example. However, in the comparative example, the frequency of the ultrasonic oscillator 46 was not controlled. The finely divided raw material solution 50 is directly introduced from above the reactor 42, and is not guided to the vicinity of the substrate by the nozzle as in the embodiment. Further, the raw material solution 50 in the form of fine particles is continuously supplied into the reactor 42.

FIG. 5 shows a distribution of film thickness when a thin film of tin oxide is formed on the glass substrate shown in FIG. 4 under the above conditions for 4 minutes. In the figure, the vertical axis indicates the film thickness, and the horizontal axis indicates the number of the measurement position shown in FIG. As is clear from the figure, the film thickness distribution in the substrate is greatly improved in the example according to the present invention (indicated by ○) as compared to the comparative example (indicated by □) using the conventional method.

FIG. 6 shows the case where the film forming apparatus is operated continuously for 4 hours under the above-described film forming conditions (when the raw material solution is continuously atomized) for 1, 2, 3, and 4 hours. 4 shows the film thickness when the film is formed for 4 minutes each. As is clear from the figure, in the comparative example using the conventional method (indicated by □), the film thickness was reduced with the passage of time, but in the example according to the present invention (indicated by ○), the film thickness was small. Almost constant. This is because, in the comparative example, the frequency of the ultrasonic vibrator changes with time, whereas in the example, the control is performed so as not to cause such a change with time. Therefore, in the embodiment of the present invention, for example, when a thin film is continuously formed on a plurality of substrates in a mass production process or the like, a desired film thickness can be formed with good reproducibility.

[0037]

As is clear from the above description, by using the present invention, a thin film having a uniform thickness and quality can be formed on a large-area substrate at low cost.

Further, by using the present invention in a mass production process of continuously forming a film on a plurality of substrates, a thin film having a constant film thickness and film quality can be formed with good reproducibility.

[Brief description of the drawings]

FIG. 1 is a schematic diagram of a fine particle forming apparatus constituting a thin film forming apparatus according to the present invention.

FIG. 2 is a schematic view of a growth apparatus constituting a thin film forming apparatus according to the present invention.

FIG. 3 is a schematic view of a levitation mechanism of the jig for mounting a substrate according to the present invention.

FIG. 4 is a glass substrate used in Examples and Comparative Examples.

FIG. 5 shows a relationship between a measurement position and a film thickness when a tin oxide film is formed.

FIG. 6 shows the relationship between the elapsed time and the film thickness when a tin oxide film is formed.

FIG. 7 is a schematic view of a fine particle forming apparatus constituting a thin film forming apparatus having a conventional structure.

FIG. 8 is a schematic view of a conventional thin film forming apparatus.

[Explanation of symbols]

1 ... Particulation tank, 2 ... Raw material solution, 3 ... Ultrasonic vibrator, 4 ... Flow meter, 5 ... Particle outflow b
7 ... pump, 8 ... overflow tube, 9 ... balance, 1
0 ... control circuit, 11 ... drive circuit, 12 ... main tank,
13 ... pump, 14 ... liquid level sensor, 15 ... liquid level sensor control circuit, 16 ... control circuit, 17 ... classifier, 18 ... pressure buffer, 19. .. Reactor, 2
0 ... temperature controller, 21 ... temperature sensor, 22 ... heater for fine particle heating, 23 ... control device, 24 ... floating rotation device, 25 ... gas discharge plate, 26 ... Gas heating equipment,
27 ... Particle spray amount controller, 28 ... Substrate detection sensor, 29 ... Particle spray amount controller, 30 ... Flow control valve, 31 ... Blow nozzle, 32 ... Heating substrate position Adjuster, 33 ... Heating substrate position detection sensor, 34 ... Heating substrate position controller, 35 ... Flow control valve, 36 ... Outlet, 3
7 ... Jig for mounting a substrate, 38 ... Discharge port, 39 ... Rotating blade, 40 ... Particle forming device, 41 ... Heater for heating fine particles, 42 ... Reactor, 43 ... substrate, 44 ... heater for substrate heating, 45 ... micronization tank, 46 ... ultrasonic vibrator,
47 ... pump, 48 ... supply tank, 49 ... flow meter, 5
0 ... raw material solution, 51 ... outlet, 52 ... substrate.

 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Hiroyuki Naka 1006 Kazuma Kadoma, Kazuma City, Osaka Prefecture F-term in Matsushita Electric Industrial Co., Ltd. (reference) 4D073 AA07 BB03 CA04 CA06 CA15 CA30 DA05 4G059 AA08 AC12 EA02 EB06 4K044 AA12 BA12 CA24 CA25 CA55 CA71 5C027 AA06 5C040 GD09 GE09 JA05 JA21 JA31 JA34 MA23 MA25 MA26

Claims (13)

[Claims] 1. A thin film forming method for forming a thin film by atomizing a raw material solution and spraying the raw material solution on a substrate, comprising: a fine particle forming step of applying fine vibration by applying vibration to the raw material solution; and transporting the finely divided raw material solution. And a film forming step of spraying the finely divided raw material solution through a nozzle onto a heated substrate to form a thin film, wherein the film forming step includes a tip of the nozzle and a surface of the substrate. A step of detecting a distance from the thin film and maintaining the distance constant. 2. A method for forming a thin film by atomizing a raw material solution to form a thin film by spraying the raw material solution on a substrate, wherein the raw material solution is vibrated to form fine particles, and the finely divided raw material solution is transported. And a film forming step of spraying the micronized raw material solution through a nozzle onto a heated substrate to form a thin film, wherein the micronizing step includes an ultrasonic vibrator. A step of applying ultrasonic vibration to the raw material solution placed in the fining tank by the ultrasonic vibrator to atomize the raw material solution, and maintaining a constant amount of the raw material solution in the fining tank. Supplying the raw material solution from the supply tank to the micronization tank,
Detecting the rate of decrease of the raw material solution in the supply tank and controlling the frequency of the ultrasonic vibrator so that the rate of decrease is constant. 3. The step of controlling the frequency of the ultrasonic vibrator includes measuring the weight of the supply tank and controlling the frequency of the ultrasonic vibrator so that the rate of decrease in the weight is constant. 3. The method for forming a thin film according to claim 2, wherein: 4. A method for forming a thin film by forming a thin film by atomizing a raw material solution and spraying the raw material solution on a substrate, comprising: a fine particle forming step of applying a vibration to the raw material solution to form fine particles; and transporting the finely divided raw material solution. And a film forming step of spraying the finely divided raw material solution through a nozzle onto a heated substrate to form a thin film, wherein the film forming step moves the substrate, Spraying the raw material solution from the nozzle onto the substrate for a predetermined period. 5. A thin film forming method for forming a thin film by atomizing a raw material solution and spraying the raw material solution on a substrate, comprising: a fine particle forming step of applying vibration to the raw material solution to form fine particles; and transporting the finely divided raw material solution. And a film forming step of spraying the finely divided raw material solution through a nozzle onto a heated substrate to form a thin film. The film forming step includes: A method for forming a thin film, comprising a step of rotating the inside of the thin film. 6. The method according to claim 1, wherein the film forming step includes a levitation means for sending a gas from below the substrate to float the substrate, and moving and / or rotating the substrate. 3. The method for forming a thin film according to item 1. 7. The method for forming a thin film according to claim 1, wherein the thin film is a transparent conductive film or a dielectric film of a plasma display panel. 8. A thin film forming apparatus in which a fine particle solution is sprayed onto a substrate to form a thin film, wherein the raw material solution is vibrated to form fine particles. Transport means for transporting the raw material solution, and the finely divided raw material solution is sprayed onto a heated substrate through a nozzle connected to the transport means,
A reaction device on which a thin film is formed, wherein the reaction device detects a distance between the tip of the nozzle and the substrate surface, and based on a detection result of the detection device,
Adjusting means for adjusting the distance to be constant. 9. A thin film forming apparatus in which a fine particle solution is sprayed onto a substrate to form a thin film, wherein the raw material solution is vibrated to form fine particles; Transport means for transporting the raw material solution, and the finely divided raw material solution is sprayed onto a heated substrate through a nozzle connected to the transport means,
A reaction device on which a thin film is formed, wherein the micronization device is a container provided with an ultrasonic vibrator, and a micronization tank in which the raw material solution in the container is micronized by applying ultrasonic vibration. A supply tank for supplying the raw material solution to the micronization tank such that the amount of the raw material solution in the micronization tank is maintained at a constant amount, and a decrease rate of the raw material solution in the supply tank is detected. Control means for controlling the frequency of the ultrasonic vibrator so that the reduction rate is constant. 10. The control means for measuring the weight of the supply tank and controlling the frequency of the ultrasonic vibrator so that the rate of decrease in the weight is constant. The thin film forming apparatus according to claim 9. 11. A thin film forming apparatus in which a fine particle solution is sprayed onto a substrate to form a thin film, wherein the raw material solution is vibrated to form fine particles. Transport means for transporting the raw material solution, and the finely divided raw material solution is sprayed onto a heated substrate through a nozzle connected to the transport means,
A reaction device on which a thin film is formed, wherein the reaction device includes: moving means for moving the substrate; and blowing means for blowing the raw material solution from the nozzle to the substrate for a predetermined period. Thin film forming apparatus. 12. A thin film forming apparatus in which a fine particle solution is sprayed onto a substrate to form a thin film, wherein the raw material solution is vibrated to form fine particles. Transport means for transporting the raw material solution, and the finely divided raw material solution is sprayed onto a heated substrate through a nozzle connected to the transport means,
A reaction device on which a thin film is formed, wherein the reaction device includes rotating means for rotating the substrate in a plane of the substrate. 13. The reaction apparatus according to claim 7, wherein said reaction apparatus includes a floating means for sending gas from under said substrate to float said substrate, and to move and / or rotate said substrate.
3. The thin film forming apparatus according to any one of 2.