JP2000275682A - Liquid crystal device and electronic equipment using the same - Google Patents

Abstract

(57) [Problem] To provide a liquid crystal device with high contrast using vertical alignment and an electronic device using the same. SOLUTION: A liquid crystal layer 3 is interposed between a pair of substrates 1 and 2, a nematic liquid crystal having a positive dielectric anisotropy is used for the liquid crystal layer, and the surfaces of the substrates 1 and 2 on the liquid crystal layer side are used. The liquid crystal molecules in the liquid crystal layer are oriented substantially perpendicular to the substrate when no voltage is applied, and the liquid crystal molecules are oriented substantially perpendicular to the substrate when a voltage is applied. The orientation of liquid crystal molecules is changed by an electric field applied to the liquid crystal. As the electrode structure, for example, a pixel electrode 31 and a common electrode 32 are provided on one substrate side, and the two electrodes are arranged so as to bite each other in a comb shape.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal device such as a liquid crystal display device, and an electronic apparatus using the same.

[0002]

2. Description of the Related Art Conventionally, in a so-called vertical alignment mode, a major axis direction of liquid crystal molecules is aligned in a direction substantially perpendicular to a substrate without applying an electric field, and an electric field is applied between the substrates to change the state of the liquid crystal. Liquid crystal devices are known. In such a liquid crystal device, a nematic liquid crystal having a negative dielectric anisotropy is generally used.

A liquid crystal display device in which a nematic liquid crystal having a negative dielectric anisotropy as described above is vertically aligned has the following advantages. (a) The response speed increases. (b) The contrast is increased. (c) It is easy to use as a reflection type.

However, on the other hand, there are the following problems. (1) A liquid crystal having a negative dielectric anisotropy does not have a liquid crystal material having a large dielectric anisotropy, and thus has a high driving voltage.
(2) It is difficult to control the direction in which liquid crystal molecules fall when an electric field is applied (on). (3) It is easily affected by an electric field of an adjacent pixel, and it is difficult to perform line inversion and dot inversion driving.

The problem (2) is a problem that greatly affects the display characteristics of the liquid crystal itself.
Several proposals have been made so far. For example,
Giving a large pretilt to the liquid crystal molecules, applying an electric field from an oblique direction slightly deviated from the vertical direction, providing an uneven structure on the substrate surface, and giving a Bretilt by the surface structure.

[0006] Although the above-mentioned method has a certain effect, the above-mentioned method deteriorates the contrast, the method requires that the bonding accuracy of the substrates be increased, and the method requires a complicated manufacturing process. There are also disadvantages.

There is no substantial improvement for the problem (1). Further, in order to solve the above problem (3), it is sufficient that line inversion and dot inversion are not performed, but there is a problem that flicker and the like are very likely to occur.

[0008]

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object of the present invention is to provide a liquid crystal device having a wide viewing angle and a high contrast by using vertical alignment, and an electronic apparatus using the same. Aim.

[0009]

Means for Solving the Problems To achieve the above object, the present invention has the following arrangement. That is, in the liquid crystal device according to the present invention, a liquid crystal layer is sandwiched between a pair of substrates, a liquid crystal having a positive dielectric anisotropy is used for the liquid crystal layer, and a vertical alignment process is performed on the liquid crystal layer side of the substrate. It is characterized by having given. In this case, a liquid crystal material having a large dielectric anisotropy can be used while taking advantage of a conventional vertical alignment method having a high contrast, so that a driving voltage can be reduced.

When no voltage is applied, the major axis of the liquid crystal molecules in the liquid crystal layer is oriented substantially perpendicular to the substrate by the above-described alignment treatment. The liquid crystal molecules are changed from a state in which the liquid crystal molecules are substantially vertically aligned by an electric field applied to the substrate.

By doing so, the direction of the liquid crystal having a positive dielectric anisotropy which is initially oriented substantially perpendicular to the substrate surface can be changed depending on the strength of the electric field. Further, the direction in which the liquid crystal is tilted by the electric field can be controlled by the direction in which the electric field is applied.

Further, the vertical alignment processing is performed by a vertical alignment film formed on at least one of the pair of substrates.

By using a vertical alignment film, a process such as rubbing is not required, and the manufacturing process can be simplified.

Further, as an electrode structure for generating an electric field in a substantially horizontal direction as described above, for example, a pixel electrode and a common electrode are provided on one substrate side, and both electrodes are arranged so as to interdigitate with each other in a comb shape. I just need. In addition, in the above liquid crystal device,
A switching element, for example, a thin film transistor including a gate electrode, a source electrode, a drain electrode, and the like can be provided for each pixel. In this case, for example, the drain electrode and the pixel electrode may be conductively connected through a through hole or the like.

With such a configuration, the intensity of the electric field in the substantially horizontal direction can be controlled for each pixel, and it is not necessary to form an electrode on the other substrate. Further, since the direction in which the liquid crystal is tilted by the application of an electric field is uniquely determined by the arrangement of the two types of electrodes, an additional step such as providing a pretilt as in the related art is not required.

In each unit pixel, the pixel electrode and the common electrode can be arranged such that the electric field in the substantially horizontal direction is generated in two or more different directions.

As described above, in the unit pixel, the direction in which the liquid crystal molecules fall can be divided into two or more directions so that the electro-optical characteristics can be made isotropic, and as a result, the viewing angle characteristics can be expanded. I can do it.

An electronic apparatus according to the present invention includes the above-described liquid crystal device as a display panel, a light valve, or the like.

[0019]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a liquid crystal device according to the present invention and an electronic apparatus using the same will be specifically described with reference to the embodiments shown in the drawings.

FIG. 1 is a longitudinal sectional front view of a schematic configuration showing an embodiment of a liquid crystal device according to the present invention, and FIG. 2 is an enlarged view of a part thereof.

The present embodiment is applied to an active matrix type liquid crystal device. In the figures, reference numerals 1 and 2 denote a pair of upper and lower substrates made of glass or the like, and a liquid crystal layer 3 is interposed between the substrates 1 and 2. Have been. A nematic liquid crystal having a positive dielectric anisotropy is used for the liquid crystal layer 3. 4
Is a seal member provided on the peripheral portion of the liquid crystal layer 3, 5 is an upper polarizing plate, and 6 is an upper polarizing plate.

On the lower substrate 2, a thin film transistor (hereinafter, referred to as a TFT) 20 is provided for each pixel as a switching element, and the TFT 20 is connected to a gate electrode 23a.
And a source electrode 25a and a drain electrode 25b. The insulating protective film 2 is provided on the liquid crystal layer 3 side of each TFT 20.
The pixel electrode 31 and the common electrode 32 are provided via 6, 27 and the like, and the pixel electrode 31 and the drain electrode 25b are conductively connected via the contact hole h.

FIG. 4 shows a planar arrangement of electrodes for a unit pixel. The pixel electrode 31 and the common electrode 32 are arranged so as to bite each other in a comb shape. Here common electrode 3
2 can have the same potential over the entire surface of the substrate, and thus may be connected to a common electrode of an adjacent pixel.

FIG. 5 shows a view of the liquid crystal device as viewed from above. The figure shows the state of six adjacent pixels. A black mask 33 is formed on the upper substrate 1, and a portion where the two types of electrodes 31, 32 are arranged in a comb-like shape is arranged in an opening 33a provided therein.

Further, vertical alignment films 41 and 42 are provided on the surface of the pixel electrode 31 and the common electrode 32 on the side of the liquid crystal layer 3 and on the surface of the upper substrate 1 on the side of the liquid crystal layer 3, respectively. When the voltage applied to the layer is equal to or lower than the threshold voltage of the liquid crystal), the liquid crystal molecules 3a in the liquid crystal layer 3 are oriented substantially perpendicularly to the substrates 1 and 2 as shown in FIG. It is configured.

On the other hand, the voltage application state, that is, the pixel electrode 3
When a voltage equal to or higher than the threshold value is applied between the first electrode 1 and the common electrode 32, a substantially horizontal electric field E is formed in the liquid crystal layer 3 as shown in FIG. The configuration is such that the substrate is oriented in a direction substantially parallel to the substrates 1 and 2.

FIG. 4 also shows the direction of the electric field E. Here, the transmission axis 5a of the upper polarizer 5 and the transmission axis 6a of the lower polarizer 6 are respectively set from the direction of the electric field as shown in FIG. 4, that is, from the major axis direction of the liquid crystal molecules 3a in the state of FIG. The polarizers 5 and 6 are shifted in the opposite direction by about 45 degrees, and are arranged in a crossed Nicols state. Further, the retardation (Δn · d) of the liquid crystal layer in the state of FIG.
However, the material of the liquid crystal and the thickness of the liquid crystal layer are selected in such a manner that the wavelength is substantially half of the wavelength of the visible light.

According to such a configuration, for example, in the state shown in FIG. 2, light that has entered the liquid crystal layer 3 from the upper polarizing plate 5 enters the lower polarizing plate 6 as it is and passes through the polarizing plate. In the state shown in FIG. 3, light entering the liquid crystal layer 3 from the upper deflecting plate 5 travels through the liquid crystal layer while changing the state to elliptical polarization. At the position, the polarization state is substantially parallel to the transmission axis of the lower polarizing plate 6, and white light is obtained through the polarizing plate.

Here, in the above example, the two substrates are sandwiched only by the polarizing plates. However, in order to correct the wavelength dependence of the retardation of the liquid crystal layer and obtain a better contrast, at least one of the glass substrates is used. It is also possible to insert a retardation film between the and the polarizing plate.

With the above configuration, a display having a higher contrast than that of the conventional TN type liquid crystal device can be realized. In addition, the response speed is higher than that of a TN type liquid crystal device or a normal IPS (in-plane switching) type liquid crystal device. Further, in the conventional vertically aligned liquid crystal device, it is difficult to perform line inversion or dot inversion driving because the electric field of the adjacent pixel easily affects the direction in which the liquid crystal molecules are inclined. Since the common electrode is formed so as to surround the periphery of the pixel and has the same potential as that of the adjacent pixel, the common electrode is hardly affected by the electric field of the adjacent pixel, and excellent display quality can be obtained even when line inversion or dot inversion driving is performed. What you can get.

When an electric field is applied, the liquid crystal molecules
Since it tilts in the direction of the electric field uniquely determined by the arrangement of the electrodes on the substrate, it is a process to add a pretilt to determine the direction in which the liquid crystal molecules tilt in the past,
It is not necessary to take measures to apply the electric field slightly obliquely. A liquid crystal device having very good contrast can be obtained by taking into account the arrangement of the electrodes and the alignment of the transmission axis of the polarizing plate.

As described above, the electrode structure in the case where the liquid crystal molecules are inclined in a single direction in the unit pixel has been described. However, the direction can be set to a plurality of directions. An example is shown in FIG. According to such an electrode structure, it becomes possible to generate electric fields generated in a substantially horizontal direction in two directions shifted from each other by 90 degrees. As a result, when viewed in pixel units, the positional relationship between the long axis direction of the liquid crystal molecules and the transmission axis of the polarizing plate in the state where an electric field is applied becomes more isotropic, and the display contrast is not so much depending on the viewing direction. The viewing angle can be increased by not changing.

As the vertical alignment film used here, a number of materials such as polyimide and polyamic acid are commercially available.
After coating with a thickness of 0 Å to 2000 Å, pre-baking is performed at a relatively low temperature of 50 ° C. to 120 ° C., and then post-baking is performed at a high temperature of 150 ° C. to 250 ° C.

The method and process for forming the active matrix substrate 2 constituting the liquid crystal device as described above are appropriate. As an example, a method for forming a substrate using a polysilicon TFT is shown in FIGS. It will be described based on the following.

First, as shown in FIG. 7A, an underlayer protective film (formed directly on the surface of a glass substrate, for example, a transparent insulating substrate 2 made of, for example, alkali-free glass or quartz, or formed on the surface of the insulating substrate 2). (Not shown)
Approximately 200 angstrom to approximately 2 thick by VD method
After forming a semiconductor film 21 made of a polysilicon film having a thickness of 2,000 Å, preferably about 1,000 Å, a resist mask RM1 is formed by using a photolithography technique. This semiconductor film 21 is formed by depositing an amorphous silicon film,
Thermal annealing at a temperature of 1 hour to 72 hours, preferably 4 hours to 6 hours to form a polysilicon film,
After depositing a polysilicon film, a method of implanting silicon, amorphizing, and then recrystallizing by thermal annealing to form a polysilicon film may be used.

Next, as shown in FIG. 7B, the semiconductor film 21 is patterned through a resist mask RM1.
An island-shaped semiconductor film 21a (active layer) is formed on the side. Next, as shown in FIG. 7C, the resist mask RM1 remaining on the surface of the semiconductor film 21a patterned in an island shape is removed.

Next, as shown in FIG. 7D, a gate oxide film 22 made of a silicon oxide film having a thickness of about 500 angstroms to about 1500 angstroms is formed on the surface of the semiconductor film 21a by a CVD method or the like. Alternatively, after forming a thermal oxide film from about 50 Å to about 1000 Å, preferably 300 Å, a silicon oxide film is deposited on the entire surface by CVD or the like from about 100 Å to about 1000 Å, preferably 500 Å, and the gate is deposited. An insulating film 22 may be formed. Further, a silicon nitride film may be used as the gate insulating film 22.

Next, as shown in FIG. 7E, after a tantalum film 23 for forming a gate electrode and the like is formed on the entire surface of the insulating substrate 2, a resist mask RM2 is formed using a photolithography technique. . Then, as shown in FIG. 7F, the tantalum film 2 is formed via the resist mask RM2.
3 is patterned to form a gate electrode 23a. Next, the resist mask RM2 used for forming the gate electrode 23a is removed as shown in FIG.

Next, as shown in FIG.
On the side of the T portion and the N-channel TFT portion of the drive circuit, about 0.1 × 10 ¹³ / c
By implanting low-concentration impurity ions (phosphorous ions) at a dose of m ² to about 10 × 10 ¹³ / cm ² , the pixel TF
On the side of the T portion, a low-concentration source region 21b and a low-concentration drain region 21c are formed in self-alignment with the gate electrode 23a. Here, the portion where the impurity ions are not introduced because it is located immediately below the gate electrode 23a becomes a channel region as it is in the semiconductor film 21a.

Next, as shown in FIG.
In the portion T, a resist mask RM3 wider than the gate electrode 23a is formed, and a high concentration of impurity ions (phosphorous ions) is added from about 0.1 × 10 ¹⁵ / cm ² to about 10 × 10 ¹⁵ / c.
implanted at a dose of m ^{2 to form} a high-concentration source region 21d.
And a drain region 21e.

Instead of these impurity introduction steps, a high-concentration impurity (phosphorus ion) is implanted in a state where a resist mask RM3 wider than the gate electrode 23a is formed without implanting a low-concentration impurity. A source region and a drain region may be formed. Also,
High concentration impurity (phosphorus ion) on the gate electrode 23a
To form a source region and a drain region having a self-aligned structure.

Although not shown, the pixel portion and the N-channel TFT portion are covered and protected with a resist so as to form a P-channel TFT portion of the peripheral drive circuit. By implanting boron ions at a dose of 1 × 10 ¹⁵ / cm ² to about 10 × 10 ¹⁵ / cm ² , P-channel source / drain regions are formed in a self-aligned manner.

As in the case of forming the N-channel TFT portion, about 0.1 × 10 ¹³ / c using the gate electrode as a mask.
After introducing a low-concentration impurity (boron ion) at a dose of m ² to about 10 × 10 ¹³ / cm ² to form a low-concentration region in the polysilicon film, a mask wider than the gate electrode is formed. To increase the concentration of impurities (boron ions) to about 0.1.
The implantation may be performed at a dose of 1 × 10 ¹⁵ / cm ² to about 10 × 10 ¹⁵ / cm ² to form a source region and a drain region of an LDD structure (lightly doped drain structure).

Also, without implanting low-concentration impurities, high-concentration impurities (phosphorous ions) are implanted in a state where a mask wider than the gate electrode is formed, thereby forming a source region and a drain region having an offset structure. Is also good.
Through these ion implantation steps, it is possible to implement CMOS, and it is possible to integrate the peripheral drive circuit into the same substrate.

Next, as shown in FIG. 8D, the resist mask RM3 is removed. Next, as shown in FIG. 8E, a first interlayer insulating film 24 made of a silicon oxide film or an NSG film (silicate glass film containing no boron or phosphorus) is formed by a CVD method or the like to have a thickness of 3000 to 15,000 angstroms. After being formed to a film thickness of about the same, a resist mask RM4 for forming a contact hole or a cutting hole in the first interlayer insulating film 24 is formed by using a photolithography technique.

Next, as shown in FIG. 9A, the first interlayer insulating film 24 is etched through the resist mask RM4, and the source region 2 in the first interlayer insulating film 24 is etched.
Contact holes h1 and h2 are formed in portions corresponding to 1d and the drain region 21e, respectively. Next, the resist mask RM4 used for forming the contact holes h1 and h2 is removed as shown in FIG.

Next, as shown in FIG. 9C, an aluminum film 25 for forming a source electrode or the like is formed on the surface side of the first interlayer insulating film 24 by a sputtering method or the like, and then photolithography is performed. A resist mask RM5 is formed using a technique.

Next, the aluminum film 25 is etched through the resist mask RM5 to form a first contact hole h in the source region 21d as shown in FIG.
A source electrode 25a (a part of a data line) made of an aluminum film electrically connected to the drain region 2
1e is formed with a drain electrode 25b electrically connected via the second contact hole h2. Next, the resist mask RM5 used for forming the source electrode 25a and the drain electrode 25b is removed as shown in FIG.

Next, as shown in FIG. 10A, an insulating film 26 is formed on the surface side of the source electrode 25a and the drain electrode 25b by firing a coating film of verhydropolysilazane or a composition containing the same. Further, the insulating film 2
On the surface of 6 by CVD using TEOS, for example, 4
An insulating film 27 made of a silicon oxide film having a thickness of about 500 Å to about 15,000 Å is formed under a temperature condition of about 00 ° C. These insulating films 26,
27 forms a second interlayer insulating film.

Here, perhydropolysilazane is a kind of inorganic polysilazane, and is a coating type coating material that is converted into a silicon oxide film by firing in the air. For example, polysilazane manufactured by Tonen Corp. is-
An inorganic polymer having (SiH ₂ NH) — as a unit,
It is soluble in organic solvents such as xylene. Therefore, a solution of the inorganic polymer in an organic solvent (for example, a 20% xylene solution) is used as a coating solution by a spin coating method (for example, a 20% xylene solution).
(At 200 rpm for 20 seconds) and then baked at 450 ° C. in the air, reacting with moisture and oxygen to obtain a dense amorphous silicon oxide film equivalent to or more than a silicon oxide film formed by the CVD method. be able to. Therefore, the insulating film (silicon oxide film) 26 formed by this method can be used as an interlayer insulating film, and also flattens irregularities caused by the drain electrode 25b. Therefore, it is possible to prevent the alignment state of the liquid crystal from being disturbed due to the unevenness.

Next, using photolithography technology,
A resist mask RM6 for forming a contact hole is formed in the second interlayer insulating films 26 and 27. Then
The second interlayer insulating film 2 is formed via the resist mask RM6.
Etching is performed on 6, 6 and 27, and a contact hole h is formed in a portion corresponding to the drain electrode 25b as shown in FIG. Next, the resist mask RM6 used for forming the contact hole h is removed as shown in FIG.

Next, as shown in FIG. 10D, the thickness for forming the pixel electrode 31 and the common electrode 32 is about 400 Å to about 2000 Å on the surface side of the second interlayer insulating film 27. ITO (Indium Tin
Oxide) After forming the film 30 by a sputtering method or the like, a resist mask RM7 for patterning the ITO film 30 is formed using a photolithography technique.

Next, the ITO film 30 is etched through the resist mask RM7 to form the drain electrode 2 through the contact hole h as shown in FIG.
A pixel electrode 31 electrically connected to the common electrode 5b;
And are formed. Thereafter, the resist mask RM7 used for forming the electrodes 31 and 32 is removed as shown in FIG.

The liquid crystal device manufactured as described above can be applied as a display panel or the like of various electronic devices, and the electronic device constituted by using the above liquid crystal device generally has a display device shown in FIG. It includes an information output source 1000, a display information processing circuit 1002, a display drive circuit 1004, a display panel 1006 such as a liquid crystal panel, a clock generation circuit 1008, and a power supply circuit 1010. The display information output source 1000 is configured to include a memory such as a ROM and a RAM, a tuning circuit for tuning and outputting a television signal, and the like.
Based on the clock from the clock generation circuit 1008,
Outputs display information such as video signals.

The display information processing circuit 1002 processes and outputs display information based on the clock from the clock generation circuit 1008. The display information processing circuit 1002 can include, for example, an amplification and polarity inversion circuit, a serial-parallel conversion circuit, a rotation circuit, a gamma correction circuit, a clamp circuit, and the like. Display drive circuit 1004
Is configured to include a scanning side driving circuit and a data side driving circuit, and drives the liquid crystal panel 1006 for display. Power supply circuit 1
010 supplies power to the above-described circuits.

FIG. 13 shows an electronic apparatus having such a configuration.
, A personal computer (PC) and an engineering workstation (EWS) for multimedia shown in FIG. 14, a pager shown in FIG. 15, or a mobile phone, a word processor, a television, a viewfinder type or a monitor. Examples include a direct-view video tape recorder, an electronic organizer, an electronic desk calculator, a car navigation device, a POS terminal, and a device having a touch panel.

FIG. 13 is a schematic configuration diagram showing a main part of the projection display device. In the figure, 110 is a light source, 113 and 114
Is a dichroic mirror, 115, 116 and 117 are reflection mirrors, 118, 119 and 120 are relay lenses,
22, 123, and 124 are liquid crystal light valves using the above-described liquid crystal device, 125 is a cross dichroic prism,
Reference numeral 126 denotes a projection lens. The light source 110 includes a lamp 111 such as a metal halide and a reflector 112 that reflects light from the lamp. The dichroic mirror 113 that reflects blue light and green light transmits only red light of the white light flux from the light source 110 and reflects blue light and green light. The transmitted red light is reflected by the reflection mirror 117 and is incident on the liquid crystal light valve 122 for red light. On the other hand, the green light of the color light reflected by the dichroic mirror 113 is reflected by the dichroic mirror 114 that reflects green light, and is incident on the liquid crystal light valve 123 for green light. On the other hand, the blue light also passes through the second dichroic mirror 114. For blue light, the incident lens 118 and the relay lens 1 are used to prevent light loss due to a long optical path.
19. A light guide means 121 comprising a relay lens system including an emission lens 120 is provided, through which blue light is incident on a liquid crystal light valve for blue light 124. The three color lights modulated by the respective light valves enter the cross dichroic prism 125. This prism is formed by bonding four right-angle prisms, and a dielectric multilayer film that reflects red light and a dielectric multilayer film that reflects blue light are formed in a cross shape on the inner surface. The three color lights are combined by these dielectric multilayer films to form light representing a color image. The combined light is transmitted through a projection lens 12 as a projection optical system.
6, the image is projected on the screen 127, and the image is enlarged and displayed.

The personal computer 12 shown in FIG.
00 is a main body 1204 having a keyboard 1202
And a liquid crystal display screen 1206 using the above-described liquid crystal device as a display device.

A pager 1300 shown in FIG. 15 includes a substrate 1304 and a backlight 1 in a metal frame 1302.
Light guide 1306 provided with 306a, circuit board 13
08, first and second shield plates 1310, 1312, 2
It has two elastic conductors 1314 and 1316 and a film carrier tape 1318. Two elastic conductors 131
4,1316 and the film carrier tape 1318,
The board 1304 and the circuit board 1308 are connected.

Here, the substrate 1304 has liquid crystal sealed between two transparent substrates 1304a and 1304b.
Thus, at least a dot matrix type liquid crystal display panel is formed. A driving circuit 1004 shown in FIG. 12 or a display information processing circuit 1002 can be formed over one of the transparent substrates. The circuit not mounted on the substrate 1304 is an external circuit of the substrate, and can be mounted on the circuit substrate 1308 in the case of FIG.

FIG. 15 shows the structure of the pager, and therefore, a circuit board 1308 is required in addition to the board 1304. However, in the case where a liquid crystal display device is used as one component for electronic equipment, a transparent substrate is used. When a display drive circuit or the like is mounted on the liquid crystal display device, the minimum unit of the liquid crystal display device is the liquid crystal display substrate 1304. Alternatively, the liquid crystal display substrate 130
What fixed the metal frame 1302 to the metal frame 1302 as a housing | casing can also be used as a liquid crystal display device which is one component for electronic devices. Further, in the case of a backlight type, a liquid crystal display substrate 130 is provided in a metal frame 1302.
4 and a light guide 1 having a backlight 1306a
The liquid crystal display device can be formed by incorporating the liquid crystal display device 306 with the liquid crystal display device. Instead of these, as shown in FIG. 16, two transparent substrates 1304a,
The IC chip 1324 is mounted on one side of a polyimide tape 1322 on which a conductive film of metal is formed on one side of 1304b.
A CP (Tape Carrier Package) 1320 can be connected and used as a liquid crystal display device, which is a component for electronic equipment.

As described above, when the liquid crystal device according to the present invention is used for a light valve of a liquid crystal projector or a display panel of another electronic device, a higher contrast can be obtained than, for example, a device using a TN type liquid crystal device. In addition, the response speed can be increased. Further, there is an advantage that a line inversion or a dot inversion drive, which is almost impossible with a conventional vertical alignment type liquid crystal device, can be performed.

[Brief description of the drawings]

FIG. 1 is a longitudinal sectional front view of a schematic configuration showing one embodiment of a liquid crystal device according to the present invention.

FIG. 2 is an enlarged vertical sectional view of a part thereof.

FIG. 3 is the same drawing in a voltage applied state.

FIG. 4 is an explanatory diagram showing an example of an arrangement configuration of a pixel electrode.

FIG. 5 is an explanatory diagram showing an arrangement configuration of a plurality of pixels and a black mask.

FIG. 6 is an explanatory view showing another example of the arrangement configuration of the pixel electrode.

FIG. 7 is an explanatory diagram of a manufacturing process of the electrode substrate.

FIG. 8 is an explanatory diagram of the manufacturing process of the electrode substrate.

FIG. 9 is an explanatory diagram of a manufacturing process of the electrode substrate.

FIG. 10 is an explanatory diagram of the manufacturing process of the electrode substrate.

FIG. 11 is an explanatory diagram of the manufacturing process of the electrode substrate.

FIG. 12 is an explanatory diagram showing a basic configuration of an electronic device using the liquid crystal device according to the present invention.

FIG. 13 is a schematic configuration diagram of a liquid crystal projector as an electronic apparatus to which the invention is applied.

FIG. 14 is a perspective view of a personal computer as an electronic apparatus to which the present invention is applied.

FIG. 15 is a perspective view of a pager as an electronic apparatus to which the present invention is applied.

FIG. 16 is a perspective view of an example in which the liquid crystal device according to the present invention is used as one component of an electronic apparatus.

[Explanation of symbols]

 Reference Signs List 1 upper substrate 2 lower substrate 3 liquid crystal layer 5 upper polarizing plate 6 lower polarizing plate 20 TFT 31 pixel electrode 32 common electrode

Continued on the front page F term (reference) 2H088 EA03 EA14 EA15 EA18 EA19 FA10 FA17 FA18 FA25 FA30 GA02 HA03 HA08 JA04 JA10 JA28 MA02 MA04 MA06 MA07 MA09 2H090 HB08Y HC08 HC15 HC17 HC18 HD14 JB02 KA04 LA04 LA06 LA15 JA29 JA14 JA35 JA38 JA42 JA44 JA46 JA47 JB11 JB23 JB32 JB33 JB38 JB58 KA04 KA07 KA12 KA16 KA18 KB14 KB22 KB25 MA05 MA08 MA14 MA15 MA16 MA18 MA19 MA20 MA27 MA29 MA35 MA37 MA41 NA01 NA04 NA19 NA25 NA27 PA02 PA10 QA06 RA05 DA05 DB02 EA04 EA05 EA07 EB02 ED01 ED11 ED14 ED20 FB12 FB15 HA08 HA10

Claims (9)

[Claims] 1. A liquid crystal layer sandwiched between a pair of substrates, a liquid crystal having a positive dielectric anisotropy is used for the liquid crystal layer, and a vertical alignment process is performed on the liquid crystal layer side of the substrate. A liquid crystal device characterized by the above-mentioned. 2. When no voltage is applied to the liquid crystal device,
The major axis direction of the liquid crystal molecules in the liquid crystal layer is oriented substantially perpendicular to the substrate, and the electric field applied in a substantially horizontal direction to the substrate when a voltage is applied. 2. The liquid crystal device according to claim 1, wherein the arrangement state of the liquid crystal molecules changes. 3. The liquid crystal device according to claim 1, wherein the vertical alignment processing is performed by forming a vertical alignment film on at least one substrate. 4. An electrode structure for generating an electric field in a substantially horizontal direction, wherein a pixel electrode and a common electrode are provided on one of the pair of substrates, and both electrodes are arranged in a comb shape. The liquid crystal device according to claim 1, wherein: 5. The pixel electrode and the common electrode are arranged such that the electric field in the substantially horizontal direction is generated in two or more different directions in a unit pixel formed by the pixel electrode and the common electrode. The liquid crystal device according to claim 1, wherein: 6. The liquid crystal device according to claim 1, wherein a switching element is formed for each pixel. 7. The liquid crystal device according to claim 1, wherein said switching element is a thin film transistor, and said pixel electrode is connected to said thin film transistor. 8. The liquid crystal device according to claim 1, wherein at least one layer of a phase difference plate is arranged. 9. An electronic apparatus comprising the liquid crystal device according to claim 1 as a display device.