JP2000230110A - Epoxy resin composition and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain an epoxy resin composition for semiconductor sealing use which is excellent in a balance between the high-temperature preservation characteristics and flame retardancy. SOLUTION: This epoxy resin composition for semiconductor sealing use essentially comprises an epoxy resin, a phenolic resin, 0.1-5 wt.% zeolite with 3-20 Å in pore diameter and 0.1-0.4 cm3/g in pore volume, 0.1-5 wt.% hydrotalcite, a bromine compound, an inorganic filler and a curing accelerator, wherein the amount of the bromine compound is such that the bromine level accounts for 0.1-1.5 wt.% of the whole epoxy resin composition.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin composition for encapsulating a semiconductor having an excellent balance between high-temperature storage characteristics and flame retardancy, and a semiconductor device obtained by encapsulating a semiconductor element using the same. It is.

[0002]

2. Description of the Related Art In recent years, a low-pressure encapsulation method using an epoxy resin composition (hereinafter, referred to as a resin composition) has been generally used for sealing semiconductor elements such as ICs and LSIs. This resin composition is required to have flame retardancy, and usually contains a bromine compound and antimony oxide for imparting flame retardancy. However, when a semiconductor device sealed with this resin composition is stored at a high temperature, it is known that brominated products thermally decomposed from these flame retardant components are liberated, which impairs the reliability of the junction of the semiconductor element. ing. The term “reliability” as used herein refers to the reliability of a bonding portion (bonding pad portion) of a semiconductor element after the semiconductor device sealed with the resin composition is left at a high temperature (for example, 185 ° C.). (Hereinafter referred to as high-temperature storage characteristics). As a technique for improving the high-temperature storage characteristics, a method using diantimony pentoxide (Japanese Patent Application Laid-Open No. 55-146950) and a method using a combination of antimony oxide and organic phosphine (Japanese Patent Application Laid-Open No.
No. 1-53321) is being studied, but at present it has not yet reached the required level of high-temperature storage characteristics for semiconductor devices.

[0003]

SUMMARY OF THE INVENTION The present invention relates to an epoxy resin composition for semiconductor encapsulation having an excellent balance between high-temperature storage characteristics and flame retardancy, and a semiconductor device using the same to encapsulate a semiconductor element. Is provided.

[0004]

According to the present invention, there are provided an epoxy resin (A), a phenolic resin (B), and a total epoxy resin composition (C) having a pore size of 3 to 20 angstroms and a pore volume of 0.1 to 0. 0.1 to 5% by weight of 0.4 cm ³ / g zeolite, (D) 0.1 to 5% by weight of hydrotalcite in the total epoxy resin composition, (E) bromine compound, (F) inorganic filler , And (G) a curing accelerator as an essential component, and the bromine content in the bromine compound is from 0.1 to 0.1 in the total epoxy resin composition.
An epoxy resin composition for semiconductor encapsulation, which is 1.5% by weight, and a semiconductor device obtained by encapsulating a semiconductor element using the same.

[0005]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The epoxy resin used in the present invention is:
There is no particular limitation as long as it has an epoxy group in the molecule, for example, orthocresol novolak type epoxy resin, phenol novolak type epoxy resin, triphenolmethane type epoxy resin, bisphenol type epoxy resin, biphenyl type epoxy resin, stilbene type An epoxy resin, a dicyclopentadiene-modified phenol type epoxy resin, a naphthalene type epoxy resin and the like can be mentioned, and these may be used alone or in combination. For the curability of the resin composition, the epoxy equivalent is desirably 150 to 300.

The phenolic resin used in the present invention is not particularly limited as long as it has a phenolic hydroxyl group in the molecule. Examples thereof include a phenol novolak resin, a phenol aralkyl resin, a terpene-modified phenol resin, and a dicyclopentadiene-modified phenol resin. , Triphenolmethane type resins, and modified resins thereof, and these may be used alone or as a mixture. For the curability of the resin composition, the hydroxyl equivalent is preferably from 80 to 250.

[0007] The zeolite used in the present invention is not particularly limited as long as it is used as an adsorbent, but a synthetic product having less impurities is more preferable than a natural product. or,
As the characteristics, those having a pore diameter of 3 to 20 angstroms and a pore volume of 0.1 to 0.4 cm ³ / g are preferable. If the pore diameter is less than 3 angstroms, the number of molecules adsorbed by the molecular sieve will be reduced, and the effect of the adsorption characteristics required for high-temperature storage characteristics will be reduced. This is not preferable because it has no effect on the high temperature storage characteristics. On the other hand, if the pore volume is less than 0.1 cm ³ / g, the adsorbing effect required for high-temperature storage characteristics is small, and if it exceeds 0.4 cm ³ / g, the fluidity may decrease, which is not preferable. The blending amount of zeolite is preferably 0.1 to 5% by weight in the whole resin composition. If it is less than 0.1% by weight, the effect on high-temperature storage characteristics is small, and if it exceeds 5% by weight, flame retardancy, which is indispensable as a sealing material characteristic, is not satisfied, and fluidity is undesirably reduced.

The hydrotalcite used in the present invention is hydrous aluminum magnesium carbonate. By using this in combination with zeolite, the amount of bromine derived from the bromine compound added as a flame retardant can be reduced, so that the balance between high-temperature storage characteristics and flame retardancy is easily achieved, and the high-temperature storage characteristics are further improved. The blending amount of hydrotalcite is preferably 0.1 to 5% by weight in the total epoxy resin composition. If it is less than 0.1% by weight, adsorption of the decomposed bromide is insufficient, and if it exceeds 5% by weight, the flame retardancy is undesirably reduced.

As the bromine compound used in the present invention, for example, brominated phenol novolak type epoxy resin, brominated bisphenol A type epoxy resin and the like can be mentioned, and these may be used alone or in combination. The amount of the bromine compound is 0.1 to 10 parts per million in the total resin composition.
1.5% by weight is desirable, and the epoxy equivalent is 200 to
450 is preferred.

The kind of the inorganic filler used in the present invention is not particularly limited, and those generally used for a sealing material can be used. For example, fused silica powder, fused spherical silica powder, crystalline silica powder, alumina, titanium white, aluminum hydroxide, talc, clay, glass fiber and the like can be mentioned.

The curing accelerator used in the present invention is not particularly limited as long as it can promote the reaction between the epoxy resin and the phenol resin. For example, 1,8-diazabicyclo (5,4,0) undecene-7, Amine compounds such as butylamine, organic phosphorus compounds such as triphenylphosphine, tetraphenylphosphonium / tetraphenylborate, imidazole compounds such as 2-methylimidazole, and the like. Good.

The resin composition of the present invention comprises, in addition to the components (A) to (G), a mold release agent such as a flame retardant other than a bromine compound, a silane coupling agent, a coloring agent, a natural wax or a synthetic wax, if necessary. Various additives such as low-stress components such as silicone oil and silicone oil may be appropriately added and used. The resin composition of the present invention is obtained by mixing components (A) to (G) and other additives at room temperature using a mixer, kneading with a kneading machine such as a roll or an extruder, cooling, and pulverizing. Can be In order to manufacture a semiconductor device by encapsulating an electronic component such as a semiconductor element using the resin composition of the present invention, it is sufficient to cure and mold by a molding method such as a transfer mold, a compression mold, and an injection mold.

[0013]

EXAMPLES The present invention will be described below with reference to examples, but the present invention is not limited to these examples. The mixing ratio is by weight. First, raw materials used in Examples and Comparative Examples will be described. Epoxy resin (ESCN-1 manufactured by Sumitomo Chemical Co., Ltd.)
95LA, softening point 65 ° C, epoxy equivalent 200) phenolic resin (phenol novolak resin, softening point 9)
X-type zeolite (Zeolam F-9 manufactured by Tosoh Corporation, average pore diameter 10 Å, pore volume 0.27 cm)
³ / g) Hydrotalcite (Kyowa Chemical Industry Co., Ltd. DHT-
4H) Brominated epoxy resin (Epiclon 153, manufactured by Dainippon Ink and Chemicals, Inc., softening point 70 ° C., epoxy equivalent 40)
0, bromine content 48% by weight) Inorganic filler (fused spherical silica, average particle size 30 μm, specific surface area 1.4 m ² / g) Curing accelerator (1,8-diazabicyclo (5,4,0) undecene-7) (Hereinafter referred to as DBU) diantimony trioxide silane coupling agent carbon black carnauba wax

Example 1 95 parts by weight of epoxy resin 45 parts by weight of phenol novolak resin 10 parts by weight of Zeolam F-9 2 parts by weight of DHT-4H 20 parts by weight of brominated epoxy resin 20 parts by weight of fused spherical silica 4 parts by weight of DBU 24 parts by weight of antimony 20 parts by weight of a silane coupling agent 6 parts by weight of carbon black 6 parts by weight of carnauba wax were mixed by a mixer, kneaded at 100 ° C. using a biaxial roll, cooled, mixed and pulverized to obtain a resin composition. . The obtained resin composition was evaluated by the following method. Table 1 shows the results.

Evaluation method Spiral flow: Measurement was performed using a mold for measuring spiral flow according to EMMI-I-66 at a mold temperature of 175 ° C., an injection pressure of 70 kg / cm ² , and a curing time of 2 minutes. The unit is cm. Flame retardancy: conforms to UL-94, test piece thickness 1 / 8i
It was measured by nch. High-temperature storage characteristics: Using a low-pressure transfer molding machine, a 16 pDIP (package width 300 mils) was molded at a mold temperature of 175 ° C., a pressure of 70 kg / cm ² , and a curing time of 2 minutes, and was post-cured at 175 ° C. for 8 hours. Ten packages were obtained. The obtained package was stored at 185 ° C., and the electrical resistance of the package wiring was examined at room temperature.
Tests were performed for up to 500 hours, and those showing a resistance value of 1.2 times or more the initial resistance value were determined to be defective. When the number of defective packages was n, it was indicated as n / 10.

Examples 2 to 5 According to the composition shown in Table 1, a resin composition was obtained in the same manner as in Example 1, and evaluated in the same manner as in Example 1. Table 1 shows the results. Comparative Examples 1 to 6 According to the formulation in Table 2, a resin composition was obtained in the same manner as in Example 1, and evaluated in the same manner as in Example 1. Table 2 shows the results.

[0017]

[Table 1]

[0018]

[Table 2]

[0019]

According to the present invention, it is possible to obtain a semiconductor device having an excellent balance between high-temperature storage characteristics and flame retardancy.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 23/29 C08G 59/62 23/31 H01L 23/30 R // C08G 59/62 (C08L 63/00 101: 04) F-term (reference) 4J002 CC032 CC042 CC062 CC072 CD041 CD051 CD061 CD071 CD123 DE138 DE148 DE287 DJ006 DJ018 DJ038 DJ048 DL008 EN029 EU119 EU139 EW149 EW179 EY019 FA048 FD018 FD133 FD159 FD206 FD207 GQ05 A0704 AD09 AF05 AF06 AF10 AF28 DC05 DC41 DC46 DD07 DD09 FA01 FA02 FA03 FA05 FB07 JA07 4M109 AA01 BA01 CA21 EA02 EA06 EB03 EB04 EB06 EB07 EB08 EB12 EB18 EB19 EC20

Claims (2)

[Claims] 1. The composition of (A) an epoxy resin, (B) a phenol resin, and (C) a total epoxy resin composition having a pore diameter of 3 to 20.
Angstrom, pore volume 0.1-0.4 cm ³ / g
0.1 to 5% by weight of zeolite, (D) 0.1 to 5% by weight of hydrotalcite in the total epoxy resin composition,
(E) A bromine compound, (F) an inorganic filler, and (G) a curing accelerator are essential components, and the amount of bromine in the bromine compound is 0.1 to 1.5% by weight in the total epoxy resin composition. An epoxy resin composition for encapsulating a semiconductor, comprising: 2. A semiconductor device comprising a semiconductor element encapsulated with the epoxy resin composition for semiconductor encapsulation according to claim 1.