JP2000189755A - Treating agent for organic silane waste gas and treating method of the same - Google Patents
Treating agent for organic silane waste gas and treating method of the sameInfo
- Publication number
- JP2000189755A JP2000189755A JP10368969A JP36896998A JP2000189755A JP 2000189755 A JP2000189755 A JP 2000189755A JP 10368969 A JP10368969 A JP 10368969A JP 36896998 A JP36896998 A JP 36896998A JP 2000189755 A JP2000189755 A JP 2000189755A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- solid metal
- silane
- org
- metal oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 title claims abstract description 25
- 229910000077 silane Inorganic materials 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title claims abstract description 12
- 239000002912 waste gas Substances 0.000 title 1
- 239000007787 solid Substances 0.000 claims abstract description 32
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 29
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 29
- 150000001282 organosilanes Chemical class 0.000 claims description 10
- 238000003672 processing method Methods 0.000 claims description 4
- 238000005469 granulation Methods 0.000 claims description 3
- 230000003179 granulation Effects 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 238000001125 extrusion Methods 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 230000002411 adverse Effects 0.000 abstract description 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 2
- 231100000331 toxic Toxicity 0.000 abstract description 2
- 230000002588 toxic effect Effects 0.000 abstract description 2
- 229910052914 metal silicate Inorganic materials 0.000 abstract 1
- 210000000056 organ Anatomy 0.000 abstract 1
- 230000000241 respiratory effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 39
- 239000003795 chemical substances by application Substances 0.000 description 9
- 239000010410 layer Substances 0.000 description 8
- 239000007864 aqueous solution Substances 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 4
- 239000007800 oxidant agent Substances 0.000 description 4
- 238000005273 aeration Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Chemical compound Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 description 2
- 230000008929 regeneration Effects 0.000 description 2
- 238000011069 regeneration method Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 101001062854 Rattus norvegicus Fatty acid-binding protein 5 Proteins 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910000278 bentonite Inorganic materials 0.000 description 1
- 239000000440 bentonite Substances 0.000 description 1
- SVPXDRXYRYOSEX-UHFFFAOYSA-N bentoquatam Chemical compound O.O=[Si]=O.O=[Al]O[Al]=O SVPXDRXYRYOSEX-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 235000010944 ethyl methyl cellulose Nutrition 0.000 description 1
- KCWYOFZQRFCIIE-UHFFFAOYSA-N ethylsilane Chemical compound CC[SiH3] KCWYOFZQRFCIIE-UHFFFAOYSA-N 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000007794 irritation Effects 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- 239000001923 methylcellulose Substances 0.000 description 1
- 229920003087 methylethyl cellulose Polymers 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- PARWUHTVGZSQPD-UHFFFAOYSA-N phenylsilane Chemical compound [SiH3]C1=CC=CC=C1 PARWUHTVGZSQPD-UHFFFAOYSA-N 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- -1 shape Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
- Treating Waste Gases (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は有機シラン排ガスの
処理剤およびその処理方法に関する。さらに詳しくは、
有機シラン系ガスの排ガスを固体金属酸化物の充填層を
通過させることにより、接触処理する乾式のガス処理剤
およびその処理方法に関する。The present invention relates to a treatment agent for an organosilane exhaust gas and a method for treating the same. For more information,
The present invention relates to a dry gas treating agent for contact-treating an exhaust gas of an organosilane gas by passing the exhaust gas through a packed layer of a solid metal oxide, and a method of treating the same.
【０００２】[0002]
【従来の技術】半導体製造用ガスの内、有機シランと呼
ばれるもので特にメチルシラン、エチルシラン、フェニ
ルシラン等の有機シランガスは、近年において半導体デ
バイス製造に於けるドライフォトレジスト剤、あるいは
低誘電率の層間絶縁膜形成材料として、特意な性能を発
揮することで注目されている。2. Description of the Related Art Among semiconductor manufacturing gases, organic silane gases such as methyl silane, ethyl silane, phenyl silane and the like, which have recently been used as dry photoresist agents or low dielectric constant interlayers in the manufacture of semiconductor devices, have recently been developed. As an insulating film forming material, it has attracted attention because of its unique performance.
【０００３】しかしながら、これら有機シランガスは新
規化学物質として取り扱われるものも多く存在し、反応
性、自然発火性が強く、例えば、モノシランと同等の危
険があるといわれており、吸収により呼吸器を激しく刺
激するなど毒性が強く、若し高濃度で外部に放出される
ならば、人体および自然環境への悪影響ははかり知れな
いものがある。よって、製造工程および半導体工業にお
ける排ガス中の有機シランガス濃度の低減は、良好な作
業環境の保持並びに自然環境の破壊の防止に勤めること
は、取り扱う者の当然の責務である。[0003] However, many of these organic silane gases are treated as new chemical substances, and are highly reactive and spontaneously ignitable. For example, it is said that there is a danger equivalent to that of monosilane. If it is highly toxic due to irritation and is released to the outside at high concentrations, its adverse effects on the human body and the natural environment may be immeasurable. Therefore, it is a natural responsibility of the person who handles the reduction of the concentration of the organosilane gas in the exhaust gas in the manufacturing process and the semiconductor industry to maintain a favorable working environment and prevent the destruction of the natural environment.
【０００４】したがって、これらの有機シラン排ガスを
大気放出する前に無害化する必要があり、従来から湿式
による種々の処理剤および処理方法が提案されている。
このうち、湿式による処理剤として水溶液を用いた処理
方法としては、例えば、過マンガン酸塩や次亜塩素酸塩
等の酸化剤を溶解させた水溶液と上記の有機シラン成分
を含む排ガスをスクラバーや噴霧装置で接触させて処理
する方法が行われていた。Therefore, it is necessary to detoxify these organic silane exhaust gases before they are released to the atmosphere, and various wet processing agents and processing methods have been conventionally proposed.
Among these, as a treatment method using an aqueous solution as a wet treatment agent, for example, an aqueous solution in which an oxidizing agent such as permanganate or hypochlorite is dissolved and an exhaust gas containing the above-mentioned organosilane component are scrubbered or treated. A method of performing treatment by contacting with a spray device has been performed.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、湿式に
よる処理方法は大量の水を必要とするため装置が大型に
なり、処理効果を維持するためには酸化剤の水溶液を短
時間で交換しなければならず手間がかかるという不都合
がある。又、酸化剤には爆発性があり安全対策を必要と
するという不都合がある。このように、酸化剤の水溶液
に有機シラン成分を含む排ガスを接触させて処理する方
法は、実用上不都合な点が多い。However, the wet treatment method requires a large amount of water, so that the apparatus becomes large in size. In order to maintain the treatment effect, the aqueous solution of the oxidizing agent must be replaced in a short time. There is a disadvantage that it takes time and effort. In addition, the oxidizing agent has an inconvenience that it is explosive and requires safety measures. Thus, the method of treating by contacting the exhaust gas containing the organic silane component with the aqueous solution of the oxidizing agent has many disadvantages in practical use.
【０００６】[0006]
【課題を解決するための手段】そこで、本発明者らは効
率よく安全に有機シラン排ガスを処理することができる
処理剤およびその方法を得るため鋭意検討した結果、固
体金属酸化物を使用することにより、その目的を達成す
ることを見いだし、本発明を完成するに至った。The inventors of the present invention have conducted intensive studies to obtain a treating agent capable of efficiently and safely treating an organic silane exhaust gas and a method therefor. As a result, the present inventors have found that the object has been achieved, and have completed the present invention.
【０００７】即ち、本発明は固体金属酸化物を主成分と
する有機シラン排ガスの処理剤または固体金属酸化物を
主成分とし、有機シランガスを含む排ガスを該固体金属
酸化物に通過し、処理することを特徴とする有機シラン
排ガスの処理方法に関する。 〔発明の詳細な説明〕That is, in the present invention, a treating agent for an organic silane exhaust gas containing a solid metal oxide as a main component or an exhaust gas containing an organic silane gas containing a solid metal oxide as a main component passes through the solid metal oxide to be treated. The present invention relates to a method for treating an organic silane exhaust gas. [Detailed description of the invention]
【０００８】以下、本発明を更に詳細に説明する。本発
明で使用する固体金属酸化物は、有機シランガスと反応
し固体金属珪化物となり得る金属元素の酸化物が使用で
きる。中でも、ＬｉＯ2、Ｎａ2Ｏ2、ＭｇＯ、Ｋ2Ｏ、Ｃ
ａＯ、ＴｉＯ2、ＭｎＯ2、ＦｅＯ、ＣｏＯ、ＮｉＯ、Ｃ
ｕＯ、ＺｎＯ等は毒性が低く取り扱いが容易であり、比
較的安価であるので好ましい。それらは単体、あるいは
二種以上の混合物として用いることができる。Hereinafter, the present invention will be described in more detail. As the solid metal oxide used in the present invention, an oxide of a metal element which can react with an organic silane gas to become a solid metal silicide can be used. Among them, LiO 2 , Na 2 O 2 , MgO, K 2 O, C
aO, TiO 2 , MnO 2 , FeO, CoO, NiO, C
uO, ZnO and the like are preferable because they have low toxicity and are easy to handle, and are relatively inexpensive. They can be used alone or as a mixture of two or more.
【０００９】本発明は、前記の固体金属酸化物の主成分
が１０重量％以上好ましくは５０重量％以上含有する充
填層に有機シランガスを含有する排ガスを通気処理す
る。用いる固体金属酸化物の比表面積は０．１ｍ2／ｇ
以上であり、有機シランガスとの気固接触能を向上させ
ることが望ましい。In the present invention, an exhaust gas containing an organosilane gas is subjected to aeration treatment in a packed layer containing 10% by weight or more, preferably 50% by weight or more of the main component of the solid metal oxide. The specific surface area of the solid metal oxide used is 0.1 m 2 / g
As described above, it is desirable to improve the gas-solid contact ability with the organosilane gas.
【００１０】また、固体金属酸化物の排ガス処理能力を
高めるために充填層の加熱を行いながら排ガスを送入す
ることが効果的である。しかしながら、該加熱は固体金
属酸化物の種類によっては加熱を全く必要とせず、室温
においても十分にその排ガス処理機能を果し得るものも
あり、また処理すべき有機シラン排ガスの濃度や目的と
する処理率によっては必ずしも必要不可欠なものではな
い。したがって、本発明では固体金属酸化物の温度は２
０〜４００℃、好ましくは２０〜２００℃が好適であ
る。４００℃を超えると使用する処理剤の劣化、またエ
ネルギーのロスといったことから好ましくない。It is effective to feed the exhaust gas while heating the packed bed in order to enhance the exhaust gas treatment capacity of the solid metal oxide. However, the heating does not require any heating depending on the kind of the solid metal oxide, and there are some which can sufficiently perform the exhaust gas treatment function even at room temperature. Depending on the processing rate, it is not essential. Therefore, in the present invention, the temperature of the solid metal oxide is 2
0-400 ° C, preferably 20-200 ° C, is suitable. If the temperature exceeds 400 ° C., it is not preferable because the treating agent used is deteriorated and energy is lost.
【００１１】現在半導体工場では、製造工程で残存する
有機シランガスを多量のＮ2ガスによって希釈した後、
処理工程に移されることから、排ガスの総量は相当なも
のとなる。充填層には粉末のまま充填しても良いが圧損
が大きくなり、ガスの流れが悪くなることから固体金属
酸化物は造粒または打錠成型、押出し成型したものが望
ましい。この際、造粒に必要なバインダーを用いるこ
と、又その種類については特定するものではなく、本発
明に於いては何ら差し支えない。At present, in a semiconductor factory, after diluting an organic silane gas remaining in a manufacturing process with a large amount of N 2 gas,
The total amount of exhaust gas is considerable since it is transferred to the processing step. The filling layer may be filled with the powder as it is, but the solid metal oxide is desirably formed by granulation, tablet molding, or extrusion since the pressure loss increases and the gas flow deteriorates. At this time, the use of a binder necessary for granulation and the type thereof are not specified, and there is no problem in the present invention.
【００１２】ここで用いるバインダーとしては、メチル
セルロース、メチルエチルセルロース、ポリビニルアル
コール等の有機バインダ−や、水ガラス、ベントナイト
等の無機バインダ−等が使用できる。充填カラムには、
高温で使用可能な汎用の材質で鉄、銅、ステンレス、ニ
ッケルといった金属製、あるいは、ガラス、アルミナと
いった酸化物系で、一般的に円筒状のものを使用する。
また、充填カラムのサイズについては処理量や処理能力
に応じたものを使用する。As the binder used here, an organic binder such as methylcellulose, methylethylcellulose and polyvinyl alcohol, and an inorganic binder such as water glass and bentonite can be used. For packed columns,
It is a general-purpose material that can be used at a high temperature and is made of a metal such as iron, copper, stainless steel, or nickel, or an oxide-based material such as glass or alumina, and generally has a cylindrical shape.
The size of the packed column is determined according to the processing amount and processing capacity.
【００１３】本発明を実施するための充填層は、１系列
でも十分であるが再生や交換等の操作上の観点からこれ
を複数並列方式とし、それぞれを処理層、再生層とし相
互に切り換えて使用するのが望ましい。以上の如く、固
体金属酸化物は有機シランガスと反応し、有機シランガ
ス中の珪素を、固体金属酸化物の表面で金属珪化物とし
て固定させることで、処理効果を持たせることができる
のである。A single packed bed for carrying out the present invention is sufficient, but from the viewpoint of operation such as regeneration and exchange, a plurality of packed layers are used in parallel, and each is switched to a processing layer and a regeneration layer. It is desirable to use. As described above, the solid metal oxide reacts with the organic silane gas, and the silicon in the organic silane gas is fixed as a metal silicide on the surface of the solid metal oxide, thereby providing a processing effect.
【００１４】[0014]
【実施例】以下、実施例により更に詳細に説明する。な
お、％、ｐｐｍは容量基準を表す。 実施例１ １６．５φｍｍ×２００ｍｍのステンレス管に比表面積
５８ｍ2／ｇのＣｕＯ粒子をタブレットマシンで成型
し、充填量２０ｃｃを充填した。充填層の部分はヒータ
ーで２００℃に加熱した。純モノメチルシランガスをヘ
リウムガスで１％に希釈し、６７ｃｃ／ｍｉｎで充填層
に通気し、充填層出口ガス中のモノメチルシラン濃度を
分析した。分析は光電離検出器（ＰＩＤ）を備えたガス
クロマトグラフ（日立製 ＧＣ−３０００）により行っ
た。分離カラムはＰｏｒａｐａｋ−Ｐ、モノメチルシラ
ンの検出限界は０．５ｐｐｍである。通気３０分後の有
機シラン濃度を表１に示した。The present invention will be described below in more detail with reference to examples. In addition,% and ppm represent a capacity standard. Example 1 CuO particles having a specific surface area of 58 m 2 / g were molded in a 16.5 φmm × 200 mm stainless steel tube using a tablet machine, and a filling amount of 20 cc was filled. The portion of the packed layer was heated to 200 ° C. with a heater. Pure monomethylsilane gas was diluted to 1% with helium gas, passed through the packed bed at 67 cc / min, and the concentration of monomethylsilane in the outlet gas of the packed bed was analyzed. The analysis was performed by a gas chromatograph (GC-3000 manufactured by Hitachi) equipped with a photoionization detector (PID). The separation column is Porapak-P, and the detection limit of monomethylsilane is 0.5 ppm. Table 1 shows the organosilane concentration after 30 minutes of ventilation.
【００１５】実施例２〜１２ 固体金属酸化物、形状、有機シラン、充填層温度及び通
気前のガス濃度を表１のように変更した以外は実施例１
と同様に行った。結果を表１に示した。Examples 2-12 Example 1 except that the solid metal oxide, shape, organosilane, packed bed temperature and gas concentration before aeration were changed as shown in Table 1.
The same was done. The results are shown in Table 1.
【００１６】実施例１３〜１８ 固体金属酸化物、形状、有機シラン、充填層温度及び通
気前のガス濃度を表２のように変更した以外は実施例１
と同様に行った。結果を表２に示した。Examples 13 to 18 Example 1 except that the solid metal oxide, the shape, the organosilane, the temperature of the packed bed and the gas concentration before aeration were changed as shown in Table 2.
The same was done. The results are shown in Table 2.
【００１７】[0017]
【表１】 [Table 1]
【００１８】[0018]
【表２】 [Table 2]
【００１９】[0019]
【発明の効果】以上、詳細に説明したように本発明は固
体金属酸化物の充填層に有機シラン排ガスを通過させる
ことにより、排ガスの処理を効率よく安全に行うことが
可能となった。さらに、従来の処理方法と比べ、処理剤
の長寿命化や装置の小型化を図れる。このことは、エネ
ルギーコスト面で大きな効果がある。As described above, according to the present invention, it is possible to efficiently and safely treat an exhaust gas by passing an organic silane exhaust gas through a packed layer of a solid metal oxide. Further, as compared with the conventional processing method, the life of the processing agent can be extended and the size of the apparatus can be reduced. This has a great effect on energy costs.
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Claims (8)
ラン排ガスの処理剤。An agent for treating an organosilane exhaust gas containing a solid metal oxide as a main component.
Ｍｇ、Ｋ、Ｃａ、Ｔｉ、Ｍｎ、Ｆｅ、Ｃｏ、Ｎｉ、Ｃ
ｕ、Ｚｎから選ばれる請求項１記載の処理剤。2. The element of the solid metal oxide is Li, Na,
Mg, K, Ca, Ti, Mn, Fe, Co, Ni, C
The treating agent according to claim 1, wherein the treating agent is selected from u and Zn.
１０重量％以上含有する請求項１記載の処理剤。3. The treating agent according to claim 1, wherein the main component of the solid metal oxide is at least 10% by weight or more.
以上含有する請求項１記載の処理剤。4. The main component of the solid metal oxide is 50% by weight.
The treating agent according to claim 1, which contains the above.
2／ｇ以上である粒子であって、これを造粒又は／およ
び打錠、押出しによって成型する請求項１記載の処理
剤。5. The solid metal oxide has a specific surface area of 0.1 m.
2. The treating agent according to claim 1, wherein the treating agent is particles having a particle size of 2 / g or more, which are formed by granulation or / and tableting and extrusion.
ランガスを含む排ガスを該固体金属酸化物に通過し、処
理することを特徴とする有機シラン排ガスの処理方法。6. A method for treating an organic silane exhaust gas, comprising passing an exhaust gas containing a solid metal oxide as a main component and containing an organic silane gas through the solid metal oxide.
度を少なくとも０．５ｐｐｍ以下まで除去する請求項６
記載の処理方法。7. The method according to claim 6, wherein the solid metal oxide removes the concentration of the organic silane exhaust gas to at least 0.5 ppm or less.
The processing method described.
過する際の温度が２０〜４００℃である請求項６記載の
処理方法。8. The processing method according to claim 6, wherein the temperature at which the organic silane gas passes through the solid metal oxide is 20 to 400 ° C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10368969A JP2000189755A (en) | 1998-12-25 | 1998-12-25 | Treating agent for organic silane waste gas and treating method of the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10368969A JP2000189755A (en) | 1998-12-25 | 1998-12-25 | Treating agent for organic silane waste gas and treating method of the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000189755A true JP2000189755A (en) | 2000-07-11 |
Family
ID=18493228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10368969A Pending JP2000189755A (en) | 1998-12-25 | 1998-12-25 | Treating agent for organic silane waste gas and treating method of the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000189755A (en) |
-
1998
- 1998-12-25 JP JP10368969A patent/JP2000189755A/en active Pending
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