JP2000162639A - Liquid crystal display device and its production - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a liquid crystal display device of a low cost, which is ultra-wide in visual field angle, has hardly visible exposure boundaries and has good display characteristics by forming pixel patterns, so as to belong to any of the exposure regions and arranging these pixel patterns in an random number arrangement in the boundary sharing regions of adjacent divided exposure regions. SOLUTION: Patterns are so formed that the exposure regions X and Y overlap and the ratios of the patterns (pixel electrodes and counter electrodes) formed by the respective exposures in the overlapped entire region that are substantially to each other in a photomechanical process for exposing the pixel electrodes and the counter electrodes. The arrangement of the patterns in a random number arrangement is equally acceptable. As a result, the exposure boundary sharing regions of which the average values of the distances between the electrodes (the distances between the pixel electrodes and the counter electrodes) for impressing a voltage have intermediate values of the respective exposure regions are generated in the liquid crystal display device, produced in this manner. The visual recognition of the exposure boundaries which were heretofore caused by the changes in the inter-electrode spacings at the exposure boundaries is relieved, and improvements in the yield and display quality grade may be obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display and a method of manufacturing the same, and more particularly to an active matrix type liquid crystal display and a method of manufacturing the same.

[0002]

2. Description of the Related Art In an active matrix type liquid crystal display device, a system in which the direction of an electric field applied to a liquid crystal is parallel to a substrate mainly provides an ultra-wide viewing angle. It is used as a technique (for example, Japanese Patent Application Laid-Open No. 8-254712). It has been clarified that when this method is adopted, there is almost no change in contrast and no inversion of the gradation level when the viewing angle direction is changed (for example, M. Ohe, et al., As.
iaDisplay '95, pp. 577-58
0).

[0003] A thin film transistor integrated device (hereinafter referred to as "TFT-L") used in a liquid crystal display device of the lateral electric field type.
In the manufacturing process of "CD", when a pattern of each layer is formed, as one method of exposing a photoresist, a division exposure method is used in which a TFT-LCD panel is divided into several regions and exposed using a division exposure apparatus. Is used. The division exposure method has a feature that a fine pattern can be obtained with relatively high accuracy because a reticle is used for a photomask.

However, in the divisional exposure method, the pattern accuracy at the center of the divisional exposure area is high, but the peripheral part is affected by the rotation and distortion of the optical system of the exposure machine, and the pattern accuracy and the overlay accuracy are relatively poor. Has characteristics. The variation of the pattern at the peripheral portion was as large as about 1 μm at the maximum, and the pattern size and the overlap size at the boundary of the divided exposure changed. In particular, a dimensional change at the divisional exposure boundary of the electrode interval for applying a voltage to the liquid crystal caused a display failure, resulting in a decrease in yield. The relationship between the change in the electrode interval and the display failure will be described below.

In a lateral electric field type liquid crystal display device in which the direction of the electric field applied to the liquid crystal is parallel to the substrate, a high electric field is required between the electrodes to drive the liquid crystal. In the case of a liquid crystal display device capable of applying a maximum voltage of 5 V to the electrode interval, the electrode interval needs to be about 4 to 6 μm in order to obtain a sufficient electric field intensity, although it depends on the liquid crystal material. For this reason, the above-described variation in pattern accuracy of about 1 μm is sufficiently large as compared with the electrode interval, and becomes the variation in display brightness as it is. For this reason, it is important to form electrodes with such narrow intervals with high precision, and high-precision patterning is required. FIG. 10 shows the relationship between the variation in electrode spacing and the rate of change in luminance in a lateral electric field type liquid crystal display device. As shown in the figure, the luminance change increases as the change in the electrode interval at the exposure boundary increases. For this reason,
In the lateral electric field type liquid crystal display device, the change in the electrode interval for each divided exposure portion causes a change in brightness at the boundary of the divided exposure to be visually recognized.

When the two electrodes are formed in different layers, the amount of misalignment between layers differs for each divided portion due to manufacturing variations, and the electrode spacing changes. This causes a problem of being visually recognized as a change in

[0007] These are phenomena peculiar to the lateral electric field type liquid crystal display device, and since the boundary is seen as a line irrelevant to the screen display, it becomes defective depending on the degree and causes a reduction in yield.

This is a new phenomenon that has not occurred in a vertical electric field liquid crystal device in which the distance between electrodes for applying a voltage to the liquid crystal is determined by the assembling accuracy of the counter substrate and the TFT substrate.

Various methods have been proposed for the vertical electric field liquid crystal device in order to reduce the visibility of the exposure boundary due to changes in the dimensional accuracy and overlay accuracy of the exposure boundary. For example, Japanese Patent Application Laid-Open Nos. 2-143
No. 514. JP-A-21435
According to claim 2 of the claims of JP-A No. 14, "When forming a mask pattern in which fine patterns are continuously arranged over a large area, the large area is divided into a plurality of small sections, and the division is performed. A small area mask pattern corresponding to each of the small sections is prepared, and is synthesized on a large area substrate by a stepper method. In a method of manufacturing a large area mask pattern, a large area is divided into a plurality of small sections. The adjacent small section has a boundary shared area, and the individual fine patterns in the shared area belong to the closer small section with a higher probability and are arranged in a random array. Production method of mask pattern "has been proposed. According to the preceding example, there is no occurrence of regular and continuous deviation along the boundary line as in the conventional method, and there is no case where the deviation is recognized as irregularity to human eyes.
However, a method of reducing display defects due to a change in the electrode spacing at the exposure boundary, which is a phenomenon unique to the horizontal electric field type liquid crystal display device, is not disclosed.

Japanese Patent Application Laid-Open No. H10-142633 discloses a liquid crystal display device of a lateral electric field type, in which a horizontal electric field is formed simultaneously with a gate electrode on a first layer formed on an insulating substrate. There is a need to disclose a method of forming two electrodes to eliminate misalignment between the electrodes, reduce display unevenness, and make it difficult to visually recognize a divided exposure boundary. However, even when two electrodes are formed in the same layer, there is no dimensional change in the electrode interval at the exposure boundary due to misalignment, and the change in the electrode interval due to the change in pattern accuracy does not essentially disappear, and the divided exposure boundary is visually recognized. Is a factor.

The present invention provides a low-cost and simple liquid crystal display device having an excellent display characteristic with an ultra-wide viewing angle and in which the exposure boundary is hard to be visually recognized, and a method of manufacturing the same. And a method for manufacturing the same.

[0012]

According to the liquid crystal display device of the present invention, in a lateral electric field type liquid crystal display device in which a screen is divided into a plurality of regions to form a pixel pattern, adjacent divided exposure regions are bounded by a shared region. In this boundary shared area, the pixel pattern belongs to any of the exposure areas and is arranged in a random number array.

[0013]

Embodiment 1 FIG. 1 is a plan view of a pixel portion of a liquid crystal display device according to the present embodiment.
FIG. 2A is a cross-sectional view of a manufacturing process of the device.
(C) and (a) and (b) of FIG. 1, 2 and 3, reference numeral 21 denotes an insulating substrate using an insulating material such as glass, 22 denotes a gate wiring formed on the substrate 21 using a metal such as Cr, and 16 denotes a metal such as Cr. The storage capacitor common wiring formed on the substrate 21 used, 23 is a gate insulating film made of silicon nitride or the like formed so as to cover the gate wiring and the storage capacitor common wiring, and 24 is in contact with the upper part of the gate insulating film 23. A semiconductor film 25 made of non-doped amorphous Si or the like is formed in a region 2 connected to the semiconductor film 24 and having an upper portion of an active region which is a part of the film removed by etching or the like.
6, a contact film obtained by doping a semiconductor film such as Si with an impurity such as P having P6;
A pixel electrode 37 is used to apply a voltage for driving the liquid crystal formed of a transparent conductive film such as O (Indium Tin Oxide) to the liquid crystal. Reference numeral 37 is connected to a storage capacitor common line and generates an electric field between the pixel electrode and the storage electrode. A counter electrode 28 is formed to be in contact with the contact film 25 and is connected to the source line 13. A drain electrode 29 is formed to be in contact with the contact film 25.
02 is an interlayer insulating film formed of a silicon nitride film or the like so as to cover the entire device, 103 is a contact hole, 6
0 is a first wiring formed on the substrate 21 using the same material as the gate wiring, 61 is a second wiring formed on the substrate 21 using the same material as the source wiring, 54 is a contact wiring This is a third wiring formed using the same material as the pixel electrode that connects the first wiring 60 and the second wiring 61.

The process flow will be described. First, FIG.
As shown in (a), Cr, Al, T
A transparent conductive film such as i, Ta, Mo, W, Ni, Cu, Au, Ag, or an alloy containing them as a main component, or ITO, and a multilayer conductive material, and a sputtering method or a vapor deposition method. After the film formation, the gate wiring 22 and the storage capacitor common wiring 16 are formed by photolithography and processing. Then Figure 2
(B) gate insulating film 2 such as silicon nitride as shown in FIG.
3, a semiconductor film 24 of amorphous Si, polycrystalline poly-Si, etc .; n ⁺ amorphous Si, n ⁺ polycrystalline poly-S doped with impurities such as P at a high concentration in the case of an n-type TFT.
A contact film 25 such as i is continuously formed by, for example, plasma CVD, normal pressure CVD, or low pressure CVD. Next, the contact film 25 and the semiconductor film 24 are processed into an island shape. Cr, Al, Ti, Ta, Mo, W, Ni, Cu,
A transparent conductive film such as Au, Ag, or an alloy containing them as a main component, ITO, or a multilayer conductive material thereof is formed by a sputtering method or a vapor deposition method, and then a source electrode is formed by photolithography and fine processing technology. 28, a drain electrode 29, and a storage capacitor electrode 101 are formed (FIG. 2C). A source wiring and a drain wiring made of the same material as the source and drain electrodes are also formed at this time. Using the source electrode 28 and the drain electrode 29 or the photoresist on which they are formed as a mask, the contact layer 2 is formed.
Etch 5 from the channel region 26. Next, an interlayer insulating film 102 made of silicon nitride, silicon oxide, an inorganic insulating film, and an organic resin is formed, and a contact hole 103 is formed by photolithography and subsequent etching (FIG. 3A).

In the photolithography process so far, the boundary between the exposures X and Y may be a straight line as shown in FIG.

Finally, Cr, Al, Ti, Ta, Mo,
A transparent conductive film such as W, Ni, Cu, Au, Ag, or an alloy containing them as a main component or ITO, and a multilayer conductive material thereof are formed and then patterned to form a pixel electrode 27 and a counter electrode 37. The wiring 54 is formed (FIG. 3B). In FIG. 3B, A is a gate / source intersection, B is a TFT, C is a storage capacitor, and D is
Indicates counter electrode portions.

In the photolithography process for exposing the pixel electrode and the counter electrode, as shown in FIG. 5, the exposure regions X and Y overlap, and a pattern formed by each exposure in the entire overlapped region Z (this process). In this case, the proportions of the pixel electrode and the counter electrode) are made substantially equal. Further, the patterns may be arranged in a random array. The overlapping width may be less than 1 mm, but a better effect can be obtained with 1 mm or more.

Next, patterning is performed by wet etching or dry etching.

As described above, a thin film transistor integrated device can be manufactured. Further, this thin film transistor integrated device is joined with a sealing material so as to sandwich the opposing substrate and the liquid crystal. Further, a gate line driving circuit, a source line driving circuit,
A liquid crystal display device is manufactured by connecting a power supply for a storage capacitor common wiring.

In the liquid crystal display device manufactured by the above method, an exposure boundary shared area having an average value of a distance between electrodes to which a voltage is applied (a distance between a pixel electrode and a counter electrode) has an intermediate value between the respective exposure areas. Occurs. Therefore, the visibility of the exposure boundary caused by the change in the electrode interval at the exposure boundary is reduced,
The yield and display quality can be improved.

The effect described in the present embodiment is the same as that of the present embodiment in a photoengraving process for forming a pixel electrode and a counter electrode in a horizontal electric field type liquid crystal display device formed by a division exposure method. By using the method, the same effect can be obtained regardless of the number and size of the divided exposure regions, the TFT structure, the driving method, the size of the display device, the number of pixels, and the type of liquid crystal.

Embodiment 2 In the present embodiment, as shown in FIG. 6, the exposure regions X and Y overlap in the photolithography process for exposing the pixel electrode and the counter electrode, and the exposure is performed in the overlapped region Z as shown in FIG. The patterns to be formed (the pixel electrode and the counter electrode in this step) are to be present with a smaller probability toward the end of each exposure area. The patterns may be arranged in a random array. Further, the patterns may be arranged in a random array. The overlapping width may be less than 1 mm, but a better effect can be obtained with 1 mm or more. The configuration other than this point is the same as that of the first embodiment, and a description thereof will be omitted.

In the liquid crystal display device manufactured by the above method, the average value of the distance between the electrodes to which a voltage is applied (the distance between the pixel electrode and the counter electrode) changes continuously in the exposure boundary shared area, and the steep interelectrode distance is obtained. Does not change. Therefore, the visibility of the exposure boundary due to a change in the electrode interval at the exposure boundary can be reduced, and the yield and display quality can be improved.

Further, since the change in the average value of the electrode spacing at the boundary between the shared exposure boundary area and the normal exposure area is small, the visibility of the boundary between the shared exposure boundary area and the normal exposure area can be reduced.

The effect described in the present embodiment is the same as that of the present embodiment in a photoengraving process for forming a pixel electrode and a counter electrode in a lateral electric field type liquid crystal display device formed by a division exposure method. By using the method, the same effect can be obtained regardless of the number and size of the divided exposure regions, the TFT structure, the driving method, the size of the display device, the number of pixels, and the type of liquid crystal.

Embodiment 3 FIG. 8 is a plan view of a pixel portion of a liquid crystal display device according to this embodiment.
Shown in 8, reference numeral 22 denotes a gate wiring formed on an insulating substrate using a metal such as Cr, 16 denotes a storage capacitor common wiring formed on an insulating substrate using a metal such as Cr, and 24 denotes a non-doped amorphous Si or the like. Semiconductor film using semiconductor, 27
Is a metal such as Cr or ITO (Indium Tin).
A pixel electrode 37 used to apply a voltage for driving liquid crystal formed of a transparent conductive film such as Oxide) to the liquid crystal;
Is a counter electrode connected to the common wiring for generating an electric field with the pixel electrode, and 29 is a drain electrode.

The process flow will be described. First, Cr, Al, Ti, Ta, Mo, W, Ni, Cu,
A transparent conductive film such as Au, Ag, an alloy containing them as a main component, ITO or the like, and a multilayer conductive material thereof is formed into a film by a sputtering method or a vapor deposition method, and then the gate wiring 22 is formed by photolithography and processing. Then, the storage capacitor common line 16 and the counter electrode 37 are formed. Next, a gate insulating film such as silicon nitride, a semiconductor film 24 such as amorphous Si and polycrystalline poly-Si, and n ⁺ amorphous Si or n ^{+ +} Polycrystalline pol
A contact film such as y-Si is continuously formed by, for example, plasma CVD, normal pressure CVD, or low pressure CVD. Next, the contact film and the semiconductor film 24 are processed into an island shape. C
r, Al, Ti, Ta, Mo, W, Ni, Cu, Au,
A transparent conductive film such as Ag or an alloy containing them as a main component, ITO or the like, and a multilayer conductive material thereof is formed by a sputtering method or a vapor deposition method, and then the source wiring 13 and the source electrode 28 are formed by photolithography and fine processing technology. , A drain electrode 29, a pixel electrode 27, and a storage capacitor electrode 101 are formed. Using the source electrode 28 and the drain electrode 29 or the photoresist on which they are formed as a mask, the contact layer is etched to remove the channel region. Next, an interlayer insulating film made of silicon nitride, silicon oxide, an inorganic insulating film, and an organic resin is formed, and a terminal portion is formed by photolithography and subsequent etching.

As described above, a thin film transistor integrated device can be manufactured. Further, this thin film transistor integrated device is joined with a sealing material so as to sandwich the opposing substrate and the liquid crystal. Further, a liquid crystal display device is manufactured by connecting a gate line driving circuit, a source line driving circuit, and a power supply for a common storage capacitor wiring to the gate wiring, the source wiring, and the common storage capacitor wiring, respectively.

In the photolithography process for exposing the pixel electrode and the counter electrode, as shown in FIG. 5, the exposure regions X and Y overlap, and a pattern formed by the respective exposures in the entire overlapping region Z (see FIG. 5). In this case, the proportions of the pixel electrode and the counter electrode) are made substantially equal. The overlapping width may be less than 1 mm, but a better effect can be obtained with 1 mm or more. Also,
The pattern may be arranged in a random array.

As described above, a thin film transistor integrated device can be manufactured. Further, this thin film transistor integrated device is joined with a sealing material so as to sandwich the opposing substrate and the liquid crystal. Further, a gate line driving circuit, a source line driving circuit,
A liquid crystal display device is manufactured by connecting a power supply for a storage capacitor common wiring.

In the liquid crystal display device manufactured by the above method, an exposure boundary shared area having an average value of a distance between electrodes to which a voltage is applied (a distance between a pixel electrode and a counter electrode) has an intermediate value between the respective exposure areas. Occurs. Therefore, the visibility of the exposure boundary caused by the change in the electrode interval at the exposure boundary is reduced,
The yield and display quality can be improved.

Also, the electrode gap fluctuation caused by the change of the overlay shift amount at the division exposure boundary has a region whose average value is an intermediate value between the respective exposure regions. Boundary visibility is reduced.

The effect described in the present embodiment is the same as that of the present embodiment in a photolithography process for forming a pixel electrode and a counter electrode in a horizontal electric field type liquid crystal display device formed by a division exposure method. By using the method, the same effect can be obtained regardless of the number and size of the divided exposure regions, the TFT structure, the driving method, the size of the display device, the number of pixels, and the type of liquid crystal.

Embodiment 4 In this embodiment, as shown in FIG. 6, the exposure regions X and Y overlap in the photolithography process for exposing the pixel electrode and the counter electrode, and in the overlapped region Z, each exposure is performed. The patterns to be formed (at least one of the pixel electrode and the counter electrode) may be present with a smaller probability toward the end of each exposure area, and the patterns may be arranged in a random arrangement. The width of the overlap may be 1 mm or more. The configuration other than this point is the same as that of the third embodiment, and will not be described.

In the liquid crystal display device manufactured by the above method, the average value of the distance between the electrodes to which the voltage is applied (the distance between the pixel electrode and the counter electrode) changes continuously in the exposure boundary shared area, and the steep distance between the electrodes is obtained. Does not change. Therefore, the visibility of the exposure boundary due to a change in the electrode interval at the exposure boundary can be reduced, and the yield and display quality can be improved.

The effect described in the embodiment is the same as the method of the present embodiment in the photoengraving process for forming the pixel electrode and the counter electrode in the case of a horizontal electric field type liquid crystal display device formed by the division exposure method. The same effect can be obtained regardless of the number and size of the divided exposure regions, the TFT structure, the driving method, the size of the display device, the number of pixels, and the type of liquid crystal.

Fifth Embodiment In this embodiment, as shown in FIGS. 7A and 7B, exposure X ₁ , X ₂ and X ₃ are performed with the pixel electrode and the counter electrode in the photolithography process of exposing the pixel electrode and the counter electrode. The positions of the boundary sharing areas of Y ₁ and Y ₂ are made different. FIG. 7 shows an example in which the exposure boundary shared areas do not overlap, but may partially overlap. The configuration other than this point is the same as that of the third or fourth embodiment, and therefore will not be described.

FIG. 7 (a) shows the position of the boundary sharing area when exposing the pixel electrode, and FIG. 7 (b) shows the position of the boundary sharing area when exposing the counter electrode.

In the liquid crystal display device manufactured by the above method, the average value of the distance between the electrodes to which a voltage is applied (the distance between the pixel electrode and the counter electrode) changes continuously in the exposure boundary shared area, and the steep interelectrode distance is obtained. Does not change. Further, it is possible to suppress a change in the electrode interval due to a misalignment of the pixel electrode and the counter electrode. Therefore, the visibility of the exposure boundary due to a change in the electrode interval at the exposure boundary can be reduced, and the yield and display quality can be improved.

Also, the electrode gap fluctuation caused by the change in the overlay displacement amount at the division exposure boundary causes the overlay displacement at different positions of the pixel electrode and the counter electrode. Recognition is reduced.

The effect described in the present embodiment is the same as that of the present embodiment in a photoengraving process for forming a pixel electrode and a counter electrode in a horizontal electric field type liquid crystal display device formed by a division exposure method. By using the method, the same effect can be obtained regardless of the number and size of the divided exposure regions, the TFT structure, the driving method, the size of the display device, the number of pixels, and the type of liquid crystal.

Embodiment 6 In this embodiment, in the photolithography process for exposing the pixel electrode and the counter electrode, the pattern arrangement of the boundary shared area Z between the exposure X and Y differs between the pixel electrode and the counter electrode as shown in FIG. To do. The configuration other than this point is the same as that of the third or fourth embodiment, and therefore will not be described.

FIG. 9B shows an example of pattern arrangement at the time of exposing a pixel electrode, and FIG. 9C shows an example of pattern arrangement at the time of exposure of a counter electrode.

In the liquid crystal display device manufactured by the above method, the average value of the distance between the electrodes to which the voltage is applied (the distance between the pixel electrode and the counter electrode) changes continuously in the boundary shared area Z between the exposures X and Y. No sharp change in the average value of the inter-electrode distance occurs. In addition, it is possible to suppress a change in electrode interval due to misalignment of the pixel electrode and the counter electrode. Therefore, the visibility of the exposure boundary due to a change in the electrode interval at the exposure boundary can be reduced, and the yield and display quality can be improved.

Also, the electrode gap variation caused by the overlay displacement at the divisional exposure boundary has a region whose average value is an intermediate value between the respective exposure regions. Boundary visibility is reduced.

The effect described in the present embodiment is the same as that of the present embodiment in a photoengraving process for forming a pixel electrode and a counter electrode in a horizontal electric field type liquid crystal display device formed by a division exposure method. By using the method, the same effect can be obtained regardless of the number and size of the divided exposure regions, the TFT structure, the driving method, the size of the display device, the number of pixels, and the type of liquid crystal.

[0047]

According to the liquid crystal display device according to the first and second aspects of the present invention, in the liquid crystal display device manufactured by the above method, the distance between the electrodes to which a voltage is applied (the distance between the pixel electrode and the counter electrode). An exposure boundary shared area having an average value of the intermediate values of the respective exposure areas is generated. Therefore, the visibility of the exposure boundary caused by a change in the electrode interval at the exposure boundary is reduced, and the yield and the display quality are improved.

According to the liquid crystal display device of the third aspect of the present invention, since the change in the average value of the electrode spacing at the boundary between the common exposure boundary area and the normal exposure area is small, the common exposure boundary area and the normal exposure area Can be reduced.

According to the liquid crystal display device according to the eighth, eleventh and twelfth aspects of the present invention, the average value of the electrode spacing fluctuation caused by the change of the overlay displacement at the boundary of the divided exposure is also reduced. Since an area having an intermediate value between the exposure areas is generated, the visibility of the exposure boundary shared area divided exposure boundary is reduced.

[Brief description of the drawings]

FIG. 1 is a plan view illustrating an example of a pixel portion of a liquid crystal display device according to an embodiment of the present invention.

FIG. 2 is a process cross-sectional view showing a manufacturing process of the liquid crystal display device of FIG.

FIG. 3 is a process sectional view showing a manufacturing process of the liquid crystal display device of FIG. 1;

FIG. 4 is an explanatory diagram showing a boundary region between exposure X and exposure Y of the liquid crystal display device according to one embodiment of the present invention.

FIG. 5 is an explanatory diagram showing a boundary region between exposure X and exposure Y of the liquid crystal display device according to one embodiment of the present invention.

FIG. 6 is an explanatory diagram showing a boundary region between exposure X and exposure Y of the liquid crystal display device according to one embodiment of the present invention.

FIG. 7 is an explanatory diagram showing a boundary region between exposures X ₁ and X ₂ and exposures Y ₁ and Y ₂ of the liquid crystal display device according to one embodiment of the present invention.

FIG. 8 is a plan view illustrating an example of a pixel portion of a liquid crystal display device according to another embodiment of the present invention.

FIG. 9 is an explanatory diagram showing a boundary region between exposure X and exposure Y of the liquid crystal display device according to one embodiment of the present invention.

FIG. 10 is a graph showing the relationship between the variation in electrode spacing and the rate of change in luminance in a conventional liquid crystal display device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 16 Storage capacitance common wiring 21 Insulating substrate 22 Gate wiring 23 Gate insulating film 24 Semiconductor film 25 Contact film 27 Pixel electrode 28 Source electrode 29 Drain electrode 37 Counter electrode 54 Third wiring 60 First wiring 61 Second wiring 101 Storage capacitance electrode 102 Interlayer insulating film 103 Contact hole

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2H092 GA14 JB24 JB69 KA05 KA10 KA12 KA18 KB04 KB25 MA04 MA05 MA07 MA08 MA16 MA18 MA19 MA37 NA01 NA29

Claims (13)

[Claims] 1. A lateral electric field type liquid crystal display device which divides a screen into a plurality of regions to form a pixel pattern,
A liquid crystal display device, wherein adjacent divided exposure regions have a shared border region, and in this shared border region, pixel patterns are arranged so as to belong to one of the exposed regions. 2. The liquid crystal display device according to claim 1, wherein predetermined patterns in the boundary sharing area are arranged in a random array. 3. The liquid crystal display device according to claim 1, wherein a predetermined pattern in the boundary sharing area is arranged so as to be present with a smaller probability toward an end of each exposure area. 4. The liquid crystal display device according to claim 1, wherein the pattern formed by the exposure having the boundary sharing region includes at least an electrode for applying an electric field to the liquid crystal. 5. A lateral electric field type liquid crystal display in which electrodes for applying an electric field to the liquid crystal are formed in the same layer, and at least an electrode pattern for applying the electric field to the liquid crystal is divided into a plurality of regions. 2. A liquid crystal display device according to claim 1, wherein adjacent divided exposure boundaries have a boundary sharing region, and a pixel pattern is arranged in the boundary sharing region so as to belong to any one of the exposure regions. 6. The liquid crystal display device according to claim 5, wherein the predetermined patterns in the boundary sharing area are arranged in a random number array. 7. The liquid crystal display device according to claim 6, wherein a predetermined pattern in the boundary sharing region is arranged so as to be present with a smaller probability toward an end of each exposure region. 8. In a lateral electric field type liquid crystal display device in which an electrode for applying an electric field to the liquid crystal is formed in a separate layer and at least one electrode pattern is divided into a plurality of regions, adjacent divisions are provided. A liquid crystal display device wherein an exposure boundary has a shared boundary region, and a pixel pattern is arranged in the shared boundary region so as to belong to one of the exposure regions. 9. The liquid crystal display device according to claim 8, wherein predetermined patterns in the boundary sharing area are arranged in a random array. 10. The liquid crystal display device according to claim 8, wherein a predetermined pattern in the boundary sharing area is arranged so as to be present with a smaller probability toward an end of each exposure area. 11. The liquid crystal display device according to claim 1, wherein the position of the boundary sharing area differs depending on a layer forming a pixel pattern. 12. The method according to claim 1, wherein an arrangement of a predetermined pattern in the boundary sharing area is different depending on a layer.
11. The liquid crystal display device according to 10. 13. The liquid crystal display device according to claim 1, wherein the width of the boundary sharing area is 1 mm or more.