JP2000158343A - Reproducing system for abrasive slurry - Google Patents
Reproducing system for abrasive slurryInfo
- Publication number
- JP2000158343A JP2000158343A JP10339063A JP33906398A JP2000158343A JP 2000158343 A JP2000158343 A JP 2000158343A JP 10339063 A JP10339063 A JP 10339063A JP 33906398 A JP33906398 A JP 33906398A JP 2000158343 A JP2000158343 A JP 2000158343A
- Authority
- JP
- Japan
- Prior art keywords
- value
- polishing slurry
- particle size
- size distribution
- abrasive slurry
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002002 slurry Substances 0.000 title claims abstract description 99
- 238000005498 polishing Methods 0.000 claims abstract description 122
- 239000002245 particle Substances 0.000 claims abstract description 43
- 239000002699 waste material Substances 0.000 claims abstract description 42
- 238000009826 distribution Methods 0.000 claims abstract description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 230000001172 regenerating effect Effects 0.000 claims description 9
- 238000005259 measurement Methods 0.000 abstract description 4
- 230000001850 reproductive effect Effects 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 239000008119 colloidal silica Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000003513 alkali Substances 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 239000004744 fabric Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000008929 regeneration Effects 0.000 description 5
- 238000011069 regeneration method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 239000006061 abrasive grain Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 150000003961 organosilicon compounds Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、例えばシリコン
ウェーハの鏡面研磨、または、デバイスプロセスでのシ
リコンウェーハへ上の酸化膜などを研磨するメカノケミ
カルプロセスにおいて、使用済みの研磨スラリーを再生
する研磨スラリーの再生システムに関する。The present invention relates to a polishing slurry for regenerating a used polishing slurry in, for example, mirror polishing of a silicon wafer or a mechanochemical process of polishing an oxide film on a silicon wafer in a device process. Related to a reproduction system.
【０００２】[0002]
【従来の技術】シリコンウェーハは鏡面加工されてデバ
イス工程に提供される。この鏡面研磨またはデバイス形
成の際に絶縁膜として形成される酸化膜などの研磨に
は、研磨時に発熱による熱歪みの少ないメカノケミカル
研磨が用いられている。このメカノケミカル研磨におい
ては、研磨剤として、粒径０．０１〜０．１μｍのコロ
イド状シリカをアルカリ性の溶液に分散させた研磨スラ
リーが用いられている。図４に示す研磨装置では、研磨
ブロック２１にシリコンウェーハ２３がワックス２２等
を用いて貼り付けられている。また、研磨定盤２５の表
面に研磨クロス２４が展着され、この研磨クロス２４に
シリコンウェーハ２３が所定の圧力で押しつけられる。
したがって、このシリコンウェーハ２３の研磨は、研磨
スラリーてら研磨定盤２５上に供給とにながら、上記研
磨ブロック２１と研磨定盤２５とを互いに逆方向に回転
させることで行われる。そして、この研磨装置より排出
される廃研磨スラリーは、廃研磨スラリーに含まれてい
る研磨クロス片および研磨片などがフイルタで除去され
て後、いったん貯蔵タンクに溜められる。その後、その
温度とｐＨ値とが計測され、アルカリ成分、新たな研磨
スラリー（コロイダルシリカスラリー）および純水等が
添加され、ｐＨ値、温度が所定値となるように調整され
た後、再度研磨スラリーとして供給、使用されていた。2. Description of the Related Art A silicon wafer is mirror-finished and provided to a device process. For the mirror polishing or polishing of an oxide film or the like formed as an insulating film at the time of device formation, mechanochemical polishing that causes less heat distortion due to heat generation during polishing is used. In the mechanochemical polishing, a polishing slurry in which colloidal silica having a particle size of 0.01 to 0.1 μm is dispersed in an alkaline solution is used as an abrasive. In the polishing apparatus shown in FIG. 4, a silicon wafer 23 is attached to a polishing block 21 using wax 22 or the like. A polishing cloth 24 is spread on the surface of the polishing platen 25, and the silicon wafer 23 is pressed against the polishing cloth 24 with a predetermined pressure.
Therefore, the polishing of the silicon wafer 23 is performed by rotating the polishing block 21 and the polishing platen 25 in opposite directions while supplying the polishing slurry onto the polishing platen 25. The waste polishing slurry discharged from the polishing apparatus is temporarily stored in a storage tank after the polishing cloth pieces and the polishing pieces contained in the waste polishing slurry are removed by a filter. Thereafter, the temperature and the pH value are measured, an alkali component, a new polishing slurry (colloidal silica slurry), pure water, and the like are added, and the pH value and the temperature are adjusted to predetermined values, and then the polishing is performed again. It was supplied and used as a slurry.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、上記廃
研磨スラリーの調整方法では、この廃研磨スラリーの性
状を検出する側が、ｐＨ値のみの１要素であるのに対
し、調整側が、アルカリ成分、研磨スラリーおよび純水
の３要素と多く、これら３要素を各適量ずつ添加して廃
研磨スラリーを調整するには、どうしても経験と勘に頼
らざるを得ず、安定した再生研磨スラリーが得難く、自
動化が難しいという問題点があった。However, in the above method for adjusting the waste polishing slurry, the side for detecting the property of the waste polishing slurry is only one element of the pH value, whereas the side for adjusting the alkali component and polishing is Slurry and pure water are as many as 3 elements. To adjust the waste polishing slurry by adding appropriate amounts of each of these 3 elements, it is absolutely necessary to rely on experience and intuition, and it is difficult to obtain a stable regenerated polishing slurry. There was a problem that was difficult.
【０００４】そこで、この発明は、上記問題点を解決
し、安定した再生研磨スラリーを自動的に得ること目的
としなされたものである。Accordingly, an object of the present invention is to solve the above problems and to automatically obtain a stable reclaimed polishing slurry.
【０００５】[0005]
【課題を解決するための手段】この発明は、研磨機で使
用済みの廃研磨スラリーを再生する研磨スラリーの再生
システムであって、この廃研磨スラリーのｐＨ値を検出
するｐＨ値検出手段と、この廃研磨スラリーのゼータ電
位を検出するゼータ電位検出手段と、この廃研磨スラリ
ーの粒度分布を検出する粒度分布検出手段とを備え、検
出したｐＨ値に基づいて廃研磨スラリーにアルカリ成分
を供給することにより、このｐＨ値を最適値に調整する
ｐＨ値調整手段と、検出したゼータ電位に基づいて廃研
磨スラリーに純水を供給することにより、このゼータ電
位を最適値に調整するゼータ電位調整手段と、検出した
粒度分布に基づいて廃研磨スラリーに新たな研磨スラリ
ーを供給することにより粒度分布を最適値に調整する粒
度分布調整手段とを有する研磨スラリーの再生システム
である。SUMMARY OF THE INVENTION The present invention is a polishing slurry regenerating system for regenerating used polishing slurry used in a polishing machine, comprising: a pH value detecting means for detecting a pH value of the waste polishing slurry; Zeta potential detecting means for detecting the zeta potential of the waste polishing slurry, and particle size distribution detecting means for detecting the particle size distribution of the waste polishing slurry, and supplying an alkali component to the waste polishing slurry based on the detected pH value Thereby, a pH value adjusting means for adjusting the pH value to an optimum value, and a zeta potential adjusting means for adjusting the zeta potential to an optimum value by supplying pure water to the waste polishing slurry based on the detected zeta potential. And a particle size distribution adjusting means for adjusting the particle size distribution to an optimum value by supplying a new polishing slurry to the waste polishing slurry based on the detected particle size distribution. A reproduction system of a polishing slurry having.
【０００６】[0006]
【作用】この発明に係る研磨スラリーの再生システムで
は、研磨機で使用済みの廃研磨スラリーのｐＨ値、ゼー
タ電位、粒度分布をそれぞれ検出する。そして、検出し
たｐＨ値に基づいて廃研磨スラリーにアルカリ成分を供
給し、ｐＨ値を最適値に調整する。また、検出したゼー
タ電位に基づいて廃研磨スラリーに純水を供給し、ゼー
タ電位を最適値に調整する。さらに、検出した粒度分布
に基づいて廃研磨スラリーに新たな研磨スラリーを供給
し、その粒度分布を最適値に調整する。この結果、研磨
スラリーは再生されて、再使用に供されることとなる。In the polishing slurry regenerating system according to the present invention, the pH value, zeta potential, and particle size distribution of the waste polishing slurry used in the polishing machine are respectively detected. Then, an alkaline component is supplied to the waste polishing slurry based on the detected pH value, and the pH value is adjusted to an optimum value. Further, pure water is supplied to the waste polishing slurry based on the detected zeta potential, and the zeta potential is adjusted to an optimum value. Further, a new polishing slurry is supplied to the waste polishing slurry based on the detected particle size distribution, and the particle size distribution is adjusted to an optimum value. As a result, the polishing slurry is regenerated and provided for reuse.
【０００７】[0007]
【発明の実施の態様】より具体的には、この発明は、研
磨機より排出される廃研磨スラリー中の研磨クロス片お
よび被研磨物の研磨片等の異物をフイルタで取り除いた
後、粒度分布検出手段でこの廃研磨スラリー中の砥粒
（コロイダルシリカ粒）の粒度分布を測定し、この粒度
分布が最適値となるように新たな研磨スラリーを添加し
て調整し、次いで、ｐＨ値を測定して、この測定値が最
適範囲になるようにアルカリ成分を添加する。続いて、
ゼータ電位を計測し、この計測値が最適範囲となるよう
に純水を添加するものである。なお、上記各要素を調整
する順序は、特に限定されない。More specifically, the present invention relates to a method for removing foreign substances such as polishing cloth pieces and polishing pieces of an object to be polished in a waste polishing slurry discharged from a polishing machine by a filter. The particle size distribution of the abrasive grains (colloidal silica particles) in the waste polishing slurry is measured by a detection means, and a new polishing slurry is added so that the particle size distribution becomes an optimum value, and then the pH value is measured. Then, an alkali component is added so that the measured value falls within the optimum range. continue,
The zeta potential is measured, and pure water is added so that the measured value is in an optimum range. The order in which the above elements are adjusted is not particularly limited.
【０００８】砥粒として使用するコロイダルシリカは、
有機ケイ素化合物を、酸またはアルカリ触媒下でアルコ
ールと水との混合溶媒中で加水分解させて製造するもの
である。添加するコロイダルシリカの粒径としては、
０．０１〜０．１μｍである。研磨スラリー中の粒径
は、研磨によって概略０．００５μｍ程度となる。ｐＨ
値の調整範囲としては、ｐＨ値８〜１１である。ｐＨ値
８以下ではコロイダルシリカが凝集し、研磨ウェーハに
ついて所定の平坦度が得られない。ｐＨ値１１以上で
は、アルカリエッチングが進行しすぎて、メカニカルな
研磨作用が強くなり、平坦度を低下させる原因となる。
特に好ましい範囲としてはｐＨ値１０〜１１である。ゼ
ータ電位の調整範囲としては、−３０ｍＶ〜−１００ｍ
Ｖである。−３０ｍＶ未満では、コロイダルシリカが再
凝集を起すので、好ましくない。−１００ｍＶを越える
と、ｐＨ値が高くなりすぎ、アルカリ性エッチングが先
行し、研磨布及び半導体ウェーハに好ましくない影響を
与える。また、研磨スラリーの平均粒径は、研磨スラリ
ーの粒度分布を測定し、各粒径毎の測定値を加重平均し
て算出する。この平均粒径が、０．００１〜０．１μｍ
とする。平均粒径が０．００１μｍ未満では、粒径が細
かくなりすぎ、研磨効率が低下するばかりか、研磨面の
温度上昇を起こすので、好ましくない。０．１μｍを越
えると、ウェーハ研磨面が所定の平坦度が得られないの
で、好ましくない。特に好ましい範囲としては、０．０
０２〜０．００５μｍである。[0008] Colloidal silica used as abrasive grains is
It is produced by hydrolyzing an organosilicon compound in a mixed solvent of alcohol and water under an acid or alkali catalyst. As the particle size of the colloidal silica to be added,
It is 0.01 to 0.1 μm. The particle size in the polishing slurry becomes approximately 0.005 μm by polishing. pH
The adjustment range of the value is a pH value of 8 to 11. When the pH value is 8 or less, colloidal silica aggregates, and a predetermined flatness cannot be obtained for the polished wafer. When the pH value is 11 or more, alkali etching proceeds excessively, and a mechanical polishing action becomes strong, which causes a decrease in flatness.
A particularly preferred range is a pH value of 10 to 11. The adjustment range of the zeta potential is -30 mV to -100 m
V. If it is less than -30 mV, colloidal silica reaggregates, which is not preferable. If it exceeds -100 mV, the pH value becomes too high, and alkaline etching precedes and adversely affects the polishing cloth and the semiconductor wafer. The average particle size of the polishing slurry is calculated by measuring the particle size distribution of the polishing slurry, and calculating a weighted average of the measured values for each particle size. This average particle size is 0.001 to 0.1 μm
And If the average particle size is less than 0.001 μm, the particle size becomes too fine, and not only the polishing efficiency decreases, but also the temperature of the polished surface increases, which is not preferable. If the thickness exceeds 0.1 μm, a predetermined flatness of the polished surface of the wafer cannot be obtained, which is not preferable. As a particularly preferred range, 0.0
02 to 0.005 μm.
【０００９】[0009]
【実施例】この発明の一実施例に係る研磨スラリーの再
生システムは、図１〜図３に示すとおりである。図１
は、研磨スラリーの再生システムの全体概念図である。
図２は、制御システムの全体図を示し、図３は、その制
御のフローチャートを示す。研磨クロス片、および被研
磨物の研磨片等が、図示していないフイルタで取り除か
れた廃研磨スラリーは、再生研磨スラリー槽１に供給さ
れる。再生研磨スラリー槽１に供給された廃研磨スラリ
ーは、ポンプ２により排出され、フイルタ３にて微細な
異物、例えば、粒径０．０１μｍ以上のものが取り除か
れる。この後、廃研磨スラリーは、ｐＨメータ４（ｐＨ
値検出手段）によりｐＨ値が、ゼータ電位計測計５（ゼ
ータ電位計測手段）でゼータ電位値が、粒度分布計測計
６（粒度分布計測手段）で粒度分布値がそれぞれ計測さ
れ、再生研磨スラリー槽１に戻される。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A polishing slurry regeneration system according to one embodiment of the present invention is as shown in FIGS. FIG.
FIG. 1 is an overall conceptual diagram of a polishing slurry regeneration system.
FIG. 2 shows an overall view of the control system, and FIG. 3 shows a flowchart of the control. The waste polishing slurry from which the polishing cloth pieces and the polishing pieces of the object to be polished have been removed by a filter (not shown) is supplied to a reclaimed polishing slurry tank 1. The waste polishing slurry supplied to the reclaimed polishing slurry tank 1 is discharged by a pump 2, and fine foreign matters, for example, those having a particle diameter of 0.01 μm or more, are removed by a filter 3. Thereafter, the waste polishing slurry is supplied to the pH meter 4 (pH
PH value, the zeta potential value is measured by a zeta potential meter 5 (zeta potential measuring device), and the particle size distribution value is measured by a particle size distribution meter 6 (particle size distribution measuring device). Returned to 1.
【００１０】そして、これらの計測信号は制御装置７に
入力される。この制御装置７では、図３に示すフローチ
ャートに基づいて、計測された上記ｐＨ値が設定値内か
否かを判断し、設定値範囲外であれば、設定値内となる
ように、アルカリ成分供給手段８（ｐＨ値調整手段）よ
りアルカリ成分（例えばＫＯＨ）を再生研磨スラリー槽
１に供給することにより、廃研磨スラリーのｐＨ値を調
整する。同様に、ゼータ電位の計測値が設定値範囲内と
なるように、純水供給手段９（ゼータ電位調整手段）に
より廃研磨スラリー槽１に純水を供給することにより、
廃研磨スラリーのゼータ電位値が調整される。さらに、
入力された粒度分布計測値より、スラリー中のコロイダ
ルシリカの平均粒度を算出し、その値が設定値範囲内か
否かを判断し、設定値範囲内となるように、研磨スラリ
ー供給手段１０（粒度分布調整手段）において、新たな
研磨スラリー１０（新たなコロイダルシリカを含むスラ
リー）を所定量添加することにより、廃研磨スラリー中
の粒度分布が調整される。図２にはこの関係を示してい
る。[0010] These measurement signals are input to the control device 7. The control device 7 determines whether or not the measured pH value is within a set value based on the flowchart shown in FIG. 3. The pH value of the waste polishing slurry is adjusted by supplying an alkaline component (for example, KOH) to the reclaimed polishing slurry tank 1 from the supply means 8 (pH value adjusting means). Similarly, by supplying pure water to the waste polishing slurry tank 1 by the pure water supply means 9 (zeta potential adjusting means) so that the measured value of the zeta potential falls within the set value range,
The zeta potential value of the waste polishing slurry is adjusted. further,
The average particle size of the colloidal silica in the slurry is calculated from the input particle size distribution measurement value, it is determined whether or not the value is within a set value range, and the polishing slurry supply means 10 ( The particle size distribution in the waste polishing slurry is adjusted by adding a predetermined amount of new polishing slurry 10 (slurry containing new colloidal silica) in the particle size distribution adjusting means). FIG. 2 shows this relationship.
【００１１】この再生研磨スラリー槽１中のスラリー全
体が上記計測値においてすべて設定値となったことが確
認されると、再生研磨スラリーとしてシリコンウェーハ
を研磨する研磨装置に供給される。When it is confirmed that the entire slurry in the reclaimed polishing slurry tank 1 has reached the set value in the above measured values, the reclaimed slurry is supplied to a polishing apparatus for polishing a silicon wafer as reclaimed polishing slurry.
【００１２】なお、制御装置７としては、ＣＰＵ、ＲＯ
Ｍ、ＲＡＭ、Ｉ／Ｏを有する公知のコンピュータシステ
ムを使用することが出来る。The control device 7 includes a CPU, an RO,
A known computer system having M, RAM, and I / O can be used.
【００１３】例えば、シリコンウェーハを鏡面研磨する
研磨機より排出される廃研磨スラリーを、いったん廃研
磨スラリータンク（図示せず）に貯蔵し、この廃研磨ス
ラリータンクより開口径２０〜７０μｍのフイルタ（図
示せず）で濾過した後、図１の再生研磨スラリー槽１に
移送した。この再生研磨スラリー槽１内の廃研磨スラリ
ーを開口径２０〜４０μｍのフイルタ３で二次濾過した
後、ｐＨメータ４、ゼータ電位計測計５、粒度分布計測
計６で計測し、これらの計測値を制御装置７に入力し
た。入力された計測値は、あらかじめ入力している値、
例えば、ｐＨ値で１０〜１１、ゼータ電位で−３０ｍＶ
〜−１００ｍＶ、平均粒径で０．００２〜０．００５μ
ｍとなるように、濃度１ｍｏｌ／ｌの水酸化カリウム、
純水、研磨スラリー（平均粒径０．００５μｍ）を再生
研磨スラリー槽１に供給する。上記各計測値が上記設定
範囲内になったことが確認されると、再生作業を終了
し、研磨機への供給を開始する。For example, waste polishing slurry discharged from a polishing machine for mirror-polishing a silicon wafer is temporarily stored in a waste polishing slurry tank (not shown), and a filter having an opening diameter of 20 to 70 μm is provided from the waste polishing slurry tank. (Not shown), and then transferred to the reclaimed polishing slurry tank 1 in FIG. After the waste polishing slurry in the reclaimed polishing slurry tank 1 is secondarily filtered by a filter 3 having an opening diameter of 20 to 40 μm, the waste polishing slurry is measured by a pH meter 4, a zeta potential meter 5, and a particle size distribution meter 6, and these measured values are measured. Was input to the control device 7. The entered measurement value is the value entered in advance,
For example, a pH value of 10 to 11 and a zeta potential of -30 mV
-100 mV, 0.002 to 0.005 μm in average particle size
m, potassium hydroxide having a concentration of 1 mol / l,
Pure water and polishing slurry (average particle size 0.005 μm) are supplied to the reclaimed polishing slurry tank 1. When it is confirmed that each of the measured values is within the above set range, the regenerating operation is finished and the supply to the polishing machine is started.
【００１４】このようにして再生処理された再生研磨ス
ラリーと、従来通りｐＨ値のみを調整した従来再生研磨
スラリーと、新たに調整した研磨スラリーとを比較した
結果は、表１に示すごとく、この発明の再生システムで
処理された再生研磨スラリーを使用した場合、新たに調
整されたスラリーと、ウェーハ研磨面の平坦度におい
て、何ら遜色がないことが確認された。As shown in Table 1, the results of comparison between the regenerated polishing slurry thus regenerated, the conventional regenerated polishing slurry in which only the pH value was conventionally adjusted, and the newly adjusted polishing slurry are shown in Table 1. When the reclaimed polishing slurry processed by the reclaiming system of the present invention was used, it was confirmed that there was no inferiority between the newly adjusted slurry and the flatness of the wafer polishing surface.
【００１５】[0015]
【表１】 [Table 1]
【００１６】[0016]
【発明の効果】この発明に係る研磨スラリーの再生シス
テムは、廃研磨スラリーの再生に有効であることが確認
された。したがって、新たに使用する研磨スラリー量が
削減されるため、ウェーハの製作コストの低減および省
資源に有効である。また、システムの自動化を図ること
が出来るばかりでなく、廃棄物の排出量が削減される
等、優れた効果を有する。The polishing slurry regenerating system according to the present invention has been confirmed to be effective in regenerating waste polishing slurry. Therefore, the amount of newly used polishing slurry is reduced, which is effective in reducing the wafer manufacturing cost and saving resources. Further, not only can the system be automated, but also there are excellent effects such as a reduction in the amount of waste discharged.
【図１】この発明の一実施例に係る研磨スラリー再生シ
ステムの全体概念図である。FIG. 1 is an overall conceptual diagram of a polishing slurry regeneration system according to one embodiment of the present invention.
【図２】この発明の一実施例に係る研磨スラリー再生シ
ステムの制御系統ブロック図である。FIG. 2 is a control system block diagram of a polishing slurry regeneration system according to one embodiment of the present invention.
【図３】この発明の一実施例に係る研磨スラリー再生シ
ステムの制御における手順を示すフローチャートであ
る。FIG. 3 is a flowchart showing a procedure in control of the polishing slurry regeneration system according to one embodiment of the present invention.
【図４】従来からの研磨装置を示すその部分縦断面図で
ある。FIG. 4 is a partial longitudinal sectional view showing a conventional polishing apparatus.
１：再生研磨スラリー槽、 ４：ｐＨメータ（ｐＨ値計測手段）、 ５：ゼータ電位計測計（ゼータ電位計測手段）、 ６：粒度分布計測計（粒度分布計測手段）、 ７：制御装置、 ８：アルカリ成分供給手段（ｐＨ値調整手段）、 ９：研磨スラリー供給手段（粒度分布調整手段）、 １０：純水供給手段（ゼータ電位調整手段）。 1: reclaimed polishing slurry tank, 4: pH meter (pH value measuring means), 5: zeta potential measuring instrument (zeta potential measuring means), 6: particle size distribution measuring instrument (particle size distribution measuring means), 7: control device, 8 : Means for supplying alkali components (means for adjusting pH value) 9: means for supplying polishing slurry (means for adjusting particle size distribution) 10: means for supplying pure water (means for adjusting zeta potential)
Claims (1)
生する研磨スラリーの再生システムであって、 この廃研磨スラリーのｐＨ値を検出するｐＨ値検出手段
と、 この廃研磨スラリーのゼータ電位を検出するゼータ電位
検出手段と、 この廃研磨スラリーの粒度分布を検出する粒度分布検出
手段とを備え、 検出したｐＨ値に基づいて廃研磨スラリーにアルカリ成
分を供給することにより、このｐＨ値を最適値に調整す
るｐＨ値調整手段と、 検出したゼータ電位に基づいて廃研磨スラリーに純水を
供給することにより、このゼータ電位を最適値に調整す
るゼータ電位調整手段と、 検出した粒度分布に基づいて廃研磨スラリーに新たな研
磨スラリーを供給することにより粒度分布を最適値に調
整する粒度分布調整手段とを有する研磨スラリーの再生
システム。1. A polishing slurry regenerating system for regenerating waste polishing slurry used in a polishing machine, comprising: a pH value detecting means for detecting a pH value of the waste polishing slurry; and a zeta potential of the waste polishing slurry. Zeta potential detecting means for detecting, and a particle size distribution detecting means for detecting a particle size distribution of the waste polishing slurry, and an alkaline component is supplied to the waste polishing slurry based on the detected pH value to optimize the pH value. A zeta potential adjusting means for adjusting the zeta potential to an optimum value by supplying pure water to the waste polishing slurry based on the detected zeta potential; and And a particle size distribution adjusting means for adjusting the particle size distribution to an optimum value by supplying a new polishing slurry to the waste polishing slurry. Raw system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33906398A JP3641956B2 (en) | 1998-11-30 | 1998-11-30 | Polishing slurry regeneration system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33906398A JP3641956B2 (en) | 1998-11-30 | 1998-11-30 | Polishing slurry regeneration system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000158343A true JP2000158343A (en) | 2000-06-13 |
| JP3641956B2 JP3641956B2 (en) | 2005-04-27 |
Family
ID=18323921
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33906398A Expired - Lifetime JP3641956B2 (en) | 1998-11-30 | 1998-11-30 | Polishing slurry regeneration system |
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| Country | Link |
|---|---|
| JP (1) | JP3641956B2 (en) |
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