JP2000151114A - Multilayer board and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a multilayer board having built-in passive elements and a manufacturing method thereof that can achieve higher performance and higher accuracy of the passive elements. SOLUTION: This ceramic multilayer board is partitioned into four blocks B1, B2, B3, B4. Two insulating layers made of AlN are laminated to constitute the block B1. Two insulating layers made of purified alumina are laminated to constitute the block B2 and resistance elements R1, R2 are formed on its upper insulating layer. The block B3 is one insulating layer made of glass ceramic and capacitors C1, C2 are formed on this insulating layer. Four insulating layers made of zirconia are laminated to constitute the block B4. These blocks B1, B2, B3, B4 are mechanically and electrically connected by insulating bonding material 11 and conductive bonding material 12 between the blocks.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multilayer substrate and a method of manufacturing the same, and more particularly, to a multilayer substrate having a passive element such as a resistor or a capacitor built therein and a method of manufacturing the same.

[0002]

2. Description of the Related Art In recent years, as electronic devices have become smaller and lighter, there has been an increasing demand for ceramic multilayer substrates used in electronic devices. For this reason, ceramic multilayer substrates, such as a high-temperature firing type alumina multilayer substrate and a low-temperature firing glass-ceramic multilayer substrate that can be fired at low temperatures, have conventionally used passive elements such as resistors, capacitors, inductors, etc. on the surface or inner layer of the ceramic multilayer substrate. A technology has been developed that is formed in a part to reduce the size and weight.

Hereinafter, the first of the conventional ceramic multilayer substrates will be described.
As an example of the above, a ceramic multilayer substrate having a built-in passive element and a manufacturing process thereof will be described with reference to FIGS. Here, FIG. 32 is a sectional view showing a conventional ceramic multilayer substrate having a built-in passive element.
FIG. 3 is a flowchart for explaining the manufacturing process of the ceramic multilayer substrate of FIG. 32, and FIG. 34 is a process perspective view for explaining the manufacturing process of the ceramic multilayer substrate of FIG.

As shown in FIG. 32, in a conventional ceramic multilayer substrate, nine insulating layers L21, L22,..., L29 made of glass ceramic are sequentially laminated. Then, these insulating layers L21, L22,
, L29, the wiring conductor layers M21, M2 are provided on the upper surface of the uppermost insulating layer L21, between the insulating layers L21, L22,..., L29, and on the lower surface of the lowermost insulating layer L29, respectively.
2,..., M30 are formed.

[0005] Further, between the insulating layers L22 and L23,
Resistive elements R21 and R22 as passive elements are built in. These resistance elements R21 and R22 are
It is composed of one electrode and a resistor layer connected to these two electrodes. Further, between the insulating layers L24 and L25, capacitors C21 and C22 as passive elements are built. These capacitors C21 and C22 are
It comprises a lower electrode, a dielectric layer formed on the lower electrode via a barrier metal layer, and an upper electrode formed on the dielectric layer via a barrier metal layer.
Further, in each of the insulating layers L21, L22,..., L29, there is formed a through hole 13 connected to the wiring conductor layers M21, M22,..., M30, the resistance elements R21, R22, and the capacitors C21, C22.

The wiring conductor layer M22 between the insulating layers L21 and L22 and the wiring conductor layer M29 between the insulating layers L28 and L29 are solid conductor layers. This shows a structure serving as a ground layer for forming a coaxial line (microstrip line) on the upper surface of the insulating layer L1 and the lower surface of the insulating layer L29.

By the way, the following materials are used for each element constituting the ceramic multilayer substrate shown in FIG. That is, the insulating layers L21, L22, ..., L29
Are alumina (Al ₂ O ₃ ) and borosilicate oxide (B ₂
O ₃ —SiO ₂ ) as a material. This glass ceramic generally has a relative dielectric constant of about 5.6 to 8.0 and a thermal conductivity of about 2.5 W / m · K.
３3 W / m · K, thermal expansion coefficient about 5.5 × 10 ⁻⁶ / ° C,
It has a heat resistance temperature of about 850 ° C. to 950 ° C. (calcination temperature). The dielectric breakdown voltage is about 10 KV / mm
２０20 KV / mm.

In addition to the glass ceramics, there are ceramic materials made of high-purity alumina, zirconia, AlN (aluminum nitride), or the like.
However, the firing temperature of these high-purity alumina and AlN is about 1
The firing temperature of the glass ceramic is about 900 ° C., while the temperature is from 000 ° C. to 1300 ° C. For this reason, glass ceramics are called low temperature fired glass ceramics.

The wiring conductor layers M21, M22,.
30 and the through hole 13 are made of, for example, Cu (copper), Ag
The material is a simple substance or a mixture of (silver), Ag-Pt (platinum), Ag-Pd (palladium), W (tungsten), Mo (molybdenum), and the like. Which of these is selected is determined based on the firing temperature of the ceramic material, the firing atmosphere, the characteristics of the circuit to be formed, and the like. Generally, Cu, Ag, Ag-Pt, and Ag-Pd are used as low-temperature firing-type wiring materials, and W and Mo are used as high-temperature firing-type wiring materials. In addition, Ag, Ag-P
In some cases, a laminated structure using t, Ag-Pd and Cu as an outer layer may be used. Cu is used for baking in a reducing atmosphere such as nitrogen, for example, and Ag, Ag-P
t and Ag-Pd are often used when firing in an oxygen atmosphere.

The electrodes constituting the resistance elements R21 and R22 include, for example, Cu, Ag, Ag-Pt, Ag-Pd
Is used as a material, and the resistor layer is made of, for example, RuO.
₂ system, LaB ₆ , SnO ₂ system and the like are used as materials.

Further, the lower electrode and the upper electrode constituting the capacitors C21 and C22 are, for example, Cu, Ag, Ag
For example, tantalum oxide having a relative dielectric constant of about 20 to 28, BaTiO ₃ having a relative dielectric constant of about 2000, and SrTiO ₃ having a relative dielectric constant of about 150 to 200 are used for the dielectric layer. , Relative permittivity 500 ~
BaSrTiO _{3 of} about 860, relative dielectric constant of 100 to 20
Various materials such as PbTiO _{3 of} about 0 and PbLaZrTiO ₃ having a relative dielectric constant of about 700 to 4000 are used.
The barrier metal layer is made of, for example, W, Ru (ruthenium), Pt, Au (gold), Ti (titanium), or the like, and has a single layer or a laminated structure of a plurality of materials.

Next, the manufacturing process of the ceramic multilayer substrate shown in FIG.
The process will be described with reference to the process schematic diagram.

Procedure-1 A powder of alumina and borosilicate oxide as a ceramic material is added to a solvent such as water or alcohol and mixed.
The average particle size of the powder at this time is about several μm. Subsequently, the mixture is kneaded to form a kneaded body.

Procedure-2 The kneaded body is extended and formed into a roll-shaped thin film having a thickness of about 10 μm to 250 μm. Then, the thin film is cut into a length and width of about 50 mm to 200 mm to form a plurality of thin plates. This thin plate is generally called a green sheet.

Procedure-3 Nine green sheets G21, G22,...
Drill a plurality of through holes with a hole diameter of about 50 μm to 200 μm. Drilling methods for these through holes include, for example, a method using a drill, a method using a mold, and a method using a laser. Then, for example, Cu, Ag, Ag-Pt, Ag
-A through hole 13 is formed by embedding a conductor made of a simple substance or a mixture such as Pd, W, and Mo. As a method of embedding a conductor in the through hole, a screen printing method is generally used.

Procedure-4 Wiring conductors are printed on each of the nine green sheets G21, G22,..., G29. That is, as shown in FIG. 34, the green sheets G21, G22,.
Is printed on the upper surface, and in some cases, the upper surface and the lower surface, to form a wiring conductor layer M21 such as a receiving land for a through hole, a wiring pattern, and a component land. At this time, the same material as the conductor used to form the through hole 13 is used as the material of the wiring conductor layer M21 and the like.

Procedure-5 Of the nine green sheets G21, G22,..., G29, a resistance element R2 is provided on a predetermined green sheet G23.
1. Form R22. That is, a conductor is applied on the green sheet G23 by using a printing method, two electrodes are formed facing each other, and then a resistor connected to these two electrodes is applied again by using a printing method, Form a layer. In some cases, a step of drying after applying the resistor is added. Thus, the resistance element R is formed on the green sheet G23.
21 and R22 are formed.

Procedure-6 Of the plurality of green sheets G21, G22,..., G29, a capacitor C is placed on a predetermined green sheet G25.
21 and C22 are formed. That is, the green sheet G25
After forming a lower electrode on the lower electrode by a printing method and performing a drying process, a barrier metal layer is formed on the lower electrode by a printing method and the drying process is performed. Subsequently, a dielectric layer is formed on the barrier metal layer by a printing method, and a drying process is performed. Further, a barrier metal layer is formed on the dielectric layer by a printing method, and after performing a drying process, an upper electrode is formed on the barrier metal layer by a printing method.

Procedure-7: Resistance elements R21, R22 and capacitors C21, C22
, And G29, including the green sheets G23 and G25 on which are formed, are sequentially stacked. Then, a laminating press is performed to prevent air or the like from remaining between the green sheets G21, G22,..., G29.

Procedure-9 The green sheet G21 laminated by the laminating press,
G22, ..., G29 are cut to a desired size. Thus, a green laminate is formed.

Procedure-10 The binder existing in each of the green sheets G21, G22,..., G29 is heated while the green laminate on which the green sheets G21, G22,. Remove. Further, main firing is performed to change the green sheets G21, G22,..., G29 into insulating layers L21, L22,.

By the above-described manufacturing process, a low-temperature fired glass-ceramic multilayer substrate in which resistance elements R21 and R22 as passive elements and capacitors C21 and C22 are built as shown in FIG. 32 is formed.

Next, the second of the conventional ceramic multilayer substrate
As an example, a ceramic multilayer substrate in which a resistive element as a passive element is formed in the uppermost layer will be described with reference to FIGS. 35 and 36. Here, FIG. 35 is a schematic cross-sectional view showing a ceramic multilayer substrate in which a conventional resistive element is formed on the uppermost layer portion, and FIGS. 36 (a) and (b) are cross-sectional views showing the resistive element of FIG. It is a top view.

As shown in FIG. 35, a resistance element R3 as a passive element is
1, R32 are formed. These resistance elements R3
36, (a) and (b), two electrodes 42a and 42b formed oppositely on a ceramic multilayer substrate 41, and these two electrodes 42
and a protective glass layer 44 covering the two electrodes 42a and 42b and the resistor layer 43. The protective glass layer 44 includes two electrodes 42 a and 42 b and a resistor layer 43.
Is mechanically protected and chemically protected from humidity, an outside atmosphere, and the like, and is formed by applying and firing paste glass.

Here, the ceramic multilayer substrate 41 is manufactured in accordance with the flowchart of FIG. 33, for example, similarly to the ceramic multilayer substrate shown in FIG. Accordingly, although not shown, a resistor or capacitor may be built in the inner layer.

The resistance elements R31 and R32 are formed by firing a green laminate obtained by laminating and pressing a plurality of green sheets to form a ceramic multilayer substrate 41. Form. For this reason, after forming these resistance elements R31 and R32, it is possible to perform a trimming process in order to keep the resistance value within a predetermined target value range. The trimming process is performed by making a groove-like cut in the width direction of the resistor layer 43 from the upper surface of the protective glass layer 44 with a laser or sandblast. At present, the accuracy of the resistance value of about 0.5% to 5% is obtained by the trimming process. Therefore, when such trimming processing is performed after the formation of the resistance elements R31 and R32, FIG.
As shown in (b), a groove-like cut 45 is made in the resistor layer 43 of each of the resistance elements R31 and R32.

Here, the ceramic multilayer substrate 4
1, the case where the resistance elements R31 and R32 are formed in the uppermost layer portion has been described.
The same applies to the case where R32 is formed in the lowermost layer of the ceramic multilayer substrate 41. Further, instead of the resistance elements R31 and R32, a capacitor can be formed, and in this case, a trimming process for setting the capacitance value of the capacitor within a predetermined target value range can be performed. It is.

Next, the third of the conventional ceramic multilayer substrate will be described.
As an example of the above, a ceramic multilayer substrate provided with a build-up layer for facilitating arrangement of a wiring conductor layer, a through hole, and the like will be described with reference to FIG. Here, FIG. 37 is a schematic sectional view showing a conventional ceramic multilayer substrate provided with a build-up layer.

As shown in FIG. 37, a build-up layer 52 having a thickness of about several μm to 100 μm made of an organic material such as polyimide or epoxy resin or crystallized glass is formed on a ceramic multilayer substrate 51. . The build-up layer 52 has a plurality of through-holes 53 respectively connected to wiring conductor layers (not shown) formed on the upper surface of the ceramic multilayer substrate 51. Further, on the upper surface of the build-up layer 52, a wiring conductor layer 54 connected to each of the plurality of through holes 53 is formed.

Here, the ceramic multilayer substrate 51 is manufactured according to the flowchart of FIG. 33, for example, similarly to the ceramic multilayer substrate shown in FIG. Accordingly, although not shown, a resistor or capacitor may be built in the inner layer.

The build-up layer 52 is formed on the ceramic multi-layer substrate 51 after forming the ceramic multi-layer substrate 51 through steps such as lamination and firing of a plurality of green sheets. When a resin material is used, the resin is applied to the upper surface of the ceramic multilayer substrate 51 by printing, spin coating, laminating a sheet material, or the like, and then cured by heat curing or irradiation with UV or the like. There is a way. In the case where crystallized glass is used as a material, the ceramic multilayer substrate 5 is formed by printing or the like.
1 After applying paste-like glass on the upper surface, baking,
There is a method of solidifying on the upper surface of the ceramic multilayer substrate 51.

The through holes 53 are for electrically connecting a wiring conductor layer (not shown) on the upper surface of the ceramic multilayer substrate 51 and a wiring conductor layer 54 on the upper surface of the build-up layer 52. Then, as a forming method, when a photosensitive resin is used as a material of the build-up layer 52,
A photosensitive resin is applied on the ceramic multilayer substrate 51,
After curing the resin other than the through-hole formation area and removing the resin in the through-hole formation area to open a plurality of through-hole holes, these through-hole holes are plated with, for example, a conductive paste. There is a method of embedding a conductor using coating, sputtering, or the like. Also, after a photosensitive resin is applied on the ceramic multilayer substrate 51 and cured, a plurality of through-holes are opened by a laser or the like, and these through-holes are plated, for example, with a conductor. There is also a method of embedding the conductor using paste application, sputtering, or the like. Furthermore, when crystallized glass is used as the material of the buildup layer 52, the ceramic multilayer substrate 51
After fixing the crystallized glass thereon, a plurality of through-holes are opened by a laser or the like, and the conductor is buried in these through-holes by, for example, plating, applying a conductive paste, or sputtering. There is a way.

The wiring conductor layer 54 is formed by forming a plurality of through holes 53 in the build-up layer 52 and then printing, plating, sputtering, etc., on the upper surface of the build-up layer 52.

In this case, the ceramic multilayer substrate 5
Although the case where one build-up layer 52 is formed on one upper surface has been described, other than this, a plurality of build-up layers can be formed on the upper surface of the ceramic multilayer substrate 51. It is possible to form a build-up layer on both the upper surface and the lower surface of the multilayer substrate 51.

As in the case of the ceramic multilayer substrate 41 shown in FIG. 35, a passive element such as a resistance element or a capacitor is formed on the uppermost layer of the ceramic multilayer substrate 51, and after the trimming process is performed, the passive element is formed. It is also possible to form the buildup layer 52 on the upper part.

Next, the fourth of the conventional ceramic multilayer substrate will be described.
As an example of this, a ceramic multilayer substrate incorporating a capacitor having a relatively small capacity by a method different from that of the ceramic multilayer substrate of FIG. 32 will be described with reference to FIG. here,
FIG. 38 is a schematic sectional view showing a conventional ceramic multilayer substrate having a built-in capacitor having a relatively small capacity.

As shown in FIG. 38, four insulating layers L31, L32,.
Are sequentially stacked. In such a laminated structure, between the insulating layer L32 and the insulating layer L33, a capacitor dielectric layer L40 also made of glass ceramic is provided.
Are formed. Also, the insulating layers L31, L32,.
L34, the upper surface of the uppermost insulating layer L31, the insulating layer L3
1 and the insulating layer L32, the insulating layer L33 and the insulating layer L34
, And on the lower surface of the insulating layer L34, wiring conductor layers M31, L32,..., L34 are formed, respectively.

The lower surface of the insulating layer L32 and the insulating layer L33
On the upper surface, two capacitor electrodes M35a, M35
35b and capacitor electrodes M36a and M36b are formed to face each other with the capacitor dielectric layer L40 interposed therebetween. That is, the capacitor C31 is formed by the capacitor electrode M35a and the capacitor electrode M36a opposed to each other with the capacitor dielectric layer L40 interposed therebetween, and the capacitor electrode M35b and the capacitor electrode M35b opposed to each other with the capacitor dielectric layer L40 interposed therebetween. Capacitor electrode M36
The capacitor C32 is formed by b.

Further, each of the insulating layers L31, L32,.
4 have wiring conductor layers M31, L32,.
4 and capacitor electrodes M35a, M35b, M36
a, a through hole 13 connected to M36b is formed.

By the way, the following materials are used for each element constituting the ceramic multilayer substrate shown in FIG. That is, the insulating layers L31, L32, ..., L34
The capacitor dielectric layer L40 is formed of the insulating layers L21, L22,..., L29 of the ceramic multilayer substrate of FIG.
Similarly to the above, a glass ceramic obtained by mixing alumina and borosilicate oxide is used as a material. This glass ceramic generally has a relative dielectric constant of about 5.6 to 8.0, a thermal conductivity of about 2.5 W / m · K to 3 W / m · K, and a thermal expansion coefficient of about 5.5 × 10 ⁻⁶ /.゜ C, heat-resistant temperature about 850 ℃ ～ 950 ℃
(Firing temperature). The dielectric breakdown voltage is about 10 KV / mm to 20 KV / mm. , L34, capacitor electrodes M35a, M35b, 36a, M36b, and through hole 13 are formed by wiring conductor layers M21, M22,..., M30 of the ceramic multilayer substrate of FIG. 13, for example, Cu, Ag, Ag-Pt, Ag
-A simple substance or a mixture such as Pd, W, and Mo is used as a material.

Next, a manufacturing process of the ceramic multilayer substrate shown in FIG. 38 will be described. Since this manufacturing process is common in many points with the manufacturing process of the ceramic multilayer substrate shown in FIG. 32, the common points are simplified in description.

Procedure-1 Powder of alumina and borosilicate oxide as a ceramic material is added to a solvent such as water or alcohol and mixed.
Subsequently, the mixture is kneaded to form a kneaded body.

Procedure-2 The kneaded body is extended to form a thin film having a thickness of about 10 μm to 250 μm and a thin film having a thickness of about 10 μm to 100 μm. Then, these thin films are vertically and horizontally dimensioned from 50 mm to 200 mm.
mm to form a plurality of thin plates, that is, green sheets.

Procedure-3 A plurality of through holes having a hole diameter of about 50 mm to 200 mm are formed in four green sheets having a thickness of about 10 μm to 250 μm. Then, for example, Cu, Ag, Ag-Pt, Ag-Pd,
Embedding a conductor made of a simple substance or a mixture of W, Mo, etc.,
A through hole 13 is formed.

Procedure-4 Conductor printing is performed on the upper surface of the four green sheets on which the through holes 13 are formed, and in some cases on the upper surface and the lower surface.
.., L34, such as receiving lands, wiring patterns, and component lands of the through holes 13, and capacitor electrodes M35a, M35b, 36a, and M36.
b and the like are formed. At this time, as the material of the wiring conductor layer M31 and the like and the capacitor electrode M35a and the like, the same system as the conductor used to form the through hole 13 is used.

Procedure-5: A green sheet having a wiring conductor layer M31 formed on the upper surface, and a wiring conductor layer M32 and a capacitor electrode M formed on the upper and lower surfaces.
Green sheet formed with 35a and 35b, thickness 10μ
a green sheet having a thickness of about m to 100 μm, electrodes M36a and 36b for capacitors and a wiring conductor layer M3 on the upper and lower surfaces.
3 and the green sheet on which the wiring conductor layer M34 is formed on the lower surface are aligned.
A capacitor electrode M35a and a capacitor electrode M3 are sandwiched between green sheets having a thickness of about 10 μm to 100 μm.
5a are opposed to each other, and the capacitor electrode M36a and the capacitor electrode M36a are opposed to each other. Then, a lamination press is performed so that air or the like does not remain between the green sheets.

Step-6 The five green sheets laminated by the laminating press are cut into a desired size. Thus, a green laminate is formed.

Procedure-7 The binder present in each green sheet is removed while heating the green laminate on which the five green sheets are laminated and optionally applying pressure. Furthermore, the main firing is performed, and the five green sheets are separated into insulating layers L31 and L31, respectively.
32, capacitor dielectric layer L40, and insulating layer L3
3. Change to L34. Thus, the capacitor C31 is formed by the capacitor electrodes M35a and M36a opposed to each other with the capacitor dielectric layer L40 interposed therebetween, and the capacitor electrode M35b opposed to the capacitor electrodes M35a and M36b also sandwiching the capacitor dielectric layer L40 therebetween. , M36b to form a capacitor C32.

By the above manufacturing process, a low-temperature fired glass-ceramic multilayer substrate incorporating capacitors C31 and C32 as shown in FIG. 38 is formed.

[0050]

In the conventional ceramic multi-layer substrate shown in FIG. 32, which incorporates the resistance elements R21 and R22 as passive elements and the capacitors C21 and C22, the resistance elements R21 and R22 are formed.
When one electrode and a resistor layer connected to these two electrodes are formed, a lower electrode constituting the capacitors C21 and C22, a barrier metal layer on the lower electrode, a dielectric layer on the barrier metal layer, When a barrier metal layer on a body layer and an upper electrode on the barrier metal layer are formed, a screen printing method is generally used, so that these electrodes, a resistor layer, a barrier metal layer, a dielectric layer, etc. It is difficult to form the green sheet without applying mechanical damage or thermal stress to the green sheet. Further, since the green sheet is a ceramic thin plate before being fired, it is soft and requires a device for fixing or positioning each layer or the laminate.

Further, in the printing by the screen method, the film thickness that can be formed must be at least 20 μm to 30 μm or more, and it is difficult to reduce the thickness of the dielectric. Was difficult to form.

The green sheet G23 on which the resistance elements R21 and R22 and the capacitors C21 and C22 are formed,
A plurality of green sheets G21, G22 including G25,
…, G29 is laminated and pressed, and further firing is performed to form a ceramic multi-layer substrate with a built-in passive element. In this firing step, unless a special method is used, the firing process is generally performed first. X from the state of the green sheet
About 10% to 20% of shrinkage occurs in the -Y direction and the same degree of shrinkage occurs in the Z direction. The degree of the shrinkage varies depending on the lot of the material, the layer configuration of the substrate, the thickness of the substrate, the state of the patterning, and the like, and an error of about 0.1% to 5% occurs. For this reason,
When actually forming a ceramic multilayer substrate with a built-in resistor and capacitor as passive elements, the optimum material system such as electrodes, resistor layers, barrier metal layers, and dielectric layers that constitute the resistor and capacitor is required. In order to select, an enormous amount of experiments must be repeated to find the optimal conditions. Then, based on the vast data of experiments, the materials and printing conditions of the built-in resistor element and capacitor are determined, and mass production is started. However, even after that, the resistance value of the resistance element after the firing step varies about 20% to 30% of the target value, and the capacitance value of the capacitor also varies about the same or more. Therefore, a ceramic multilayer substrate with a built-in resistor and capacitor as passive elements can only be used in circuits that can tolerate such variations in resistance and capacitance. Not adopted.

As described above, a ceramic multilayer substrate having a built-in resistive element and capacitor as passive elements,
Due to the time required to find the optimum manufacturing conditions for the resistive element and the capacitor and the precision of the formed resistive element and capacitor, the level has not yet reached a level that can be used in place of the current chip-type components. Further, in the conventional ceramic multilayer substrate incorporating the capacitors C31 and C32 shown in FIG. 38, two sets of capacitor electrodes facing each other with the capacitor dielectric layer L40 interposed therebetween,
That is, the capacitor C31 is formed by the capacitor electrodes M35a and M36a and the capacitor electrodes M35b and M36b. Now, this capacitor dielectric layer L4
0 is 50 μm and the relative permittivity is 5.7, the capacitance value of the capacitors C31 and C32 is 1 pF / mm ²
Only the following values are obtained:

Therefore, the capacitor dielectric layer L40
There is an idea to increase the relative dielectric constant of the capacitor to obtain a capacitor with a higher capacity.However, since the difference in the dielectric constant basically means the difference in the material composition itself, the green sheet Although it is possible to do so, a good laminate cannot be obtained because the shrinkage ratio at the stage of laminating press and firing is different from the material of other parts. For this reason, when a material having an increased dielectric constant is used as the dielectric layer L40 for a capacitor and a ceramic multilayer substrate as shown in FIG. 38 is to be obtained, the insulating layers L31, L32,
.., The material of L34 must have the same or equivalent composition as that of the dielectric layer for capacitor L40.

As described above, it is difficult at present to obtain a high-capacitance capacitor by stacking green sheets made of different materials having different relative dielectric constants in a co-fired ceramic laminate. . It is also difficult to make the relative dielectric constant of the order of 100 to 1000 using a ceramic material.

As described with reference to the ceramic multilayer substrate 41 shown in FIG. 35, when a resistive element or a capacitor as a passive element is formed on the uppermost layer or the lowermost layer of the ceramic multilayer substrate, the ceramic multilayer substrate 41 is not required. Since the substrate has already undergone the firing process, the formation of electrodes, resistor layers, dielectric layers, etc. constituting the passive element can be performed by printing, plating, CVD, sputtering, etc., without worrying about shrinkage due to firing. It can be formed by a simple method.

After a resistive element or a capacitor as a passive element is formed on the uppermost layer or the lowermost layer of the ceramic multilayer substrate, a trimming process is performed so that the resistance or the capacitance falls within a predetermined target value range. It is possible to make adjustments to fit. In particular, when a high-capacity capacitor is to be formed, the use of a thin-film process has an advantage that a material which has been conventionally difficult to use can be applied and heat-treated. In this case, the surface of the ceramic multilayer substrate has irregularities of about several μm regardless of the high-temperature sintering type or the low-temperature sintering type. It is necessary to improve the surface condition of the ceramic multilayer substrate. For example, as a method of improving the surface condition, flattening is performed by polishing after ceramic sintering, unevenness is improved by spin-on glass, glaze treatment, and the like in the XY direction. Methods for manufacturing shrink substrates have been developed.

However, when a passive element is formed in the uppermost layer or the lowermost layer of the ceramic multilayer substrate as described above, other circuit connections that need to be formed in the uppermost layer or the lowermost layer of the ceramic multilayer substrate are required. Therefore, there is a problem that the number of passive elements that can be formed in the uppermost layer or the lowermost layer of the ceramic multilayer substrate is limited.
Also, the uppermost layer and the lowermost layer of the ceramic multilayer substrate are
Since there are only two planes, if a passive element is to be formed here, it may be necessary to form a resistor element and a capacitor in a mixed manner. Is done.

As shown in FIG. 32, coaxial lines (microstrip lines) are formed in the uppermost layer and the lowermost layer of the ceramic multilayer substrate, respectively. When forming a solid conductor layer, the formation of passive elements in the uppermost layer and the lowermost layer of the ceramic multilayer substrate is not always a good characteristic in terms of circuit characteristics, through hole arrangement and pattern routing. There is a problem that can not be obtained.

The situation described above is based on the fact that the ceramic multilayer substrate 51 having the build-up layer 52 shown in FIG. The same applies when a resistive element or a capacitor as a passive element is formed. In particular, in the ceramic multilayer substrate shown in FIG. 32, assuming that the insulating layers L21 and L29 are build-up layers, passive elements are formed between the insulating layers L21 and L22 and between the insulating layers L28 and L29. When microstrip lines are formed on the upper surface of the insulating layer L21 and the lower surface of the insulating layer L29, the solid conductor layer serving as the ground layer is provided between the insulating layers L22 and L23 and between the insulating layers L27 and L27.
28 or an insulating layer L2 forming a passive element.
1 and L22 and between the insulating layers L28 and L29. Further, since a large number of through holes must be formed from the surface layer to the solid conductor layer due to its characteristics, there is naturally a limitation.

Accordingly, the present invention has been made in view of the above circumstances, and in a multilayer substrate having a built-in passive element and a method of manufacturing the same, a multilayer board capable of realizing high performance and high precision of the passive element. It is an object to provide a substrate and a method for manufacturing the same.

[0062]

The above objects can be attained by the following multi-layer substrate and a method of manufacturing the same according to the present invention. That is, the multilayer substrate according to claim 1 is a multilayer substrate having a built-in passive element, which is divided into a plurality of blocks in which the multilayer substrate is laminated, and the plurality of blocks have through holes and wiring conductors. The passive element is formed on a single layer or a plurality of insulating layers formed, the passive element is formed on an insulating layer which is a surface layer of a predetermined block of the plurality of blocks, and adjacent blocks of the plurality of blocks are insulatively bonded. It is characterized by being mechanically joined by a material and electrically joined by a conductive joining material. Here, "electrically joined by a conductive joining material"
This means that the through holes of the blocks adjacent to each other in the plurality of blocks and the wiring conductor or the passive element are electrically connected by the conductive bonding material. Also,
This is the same in the following description.

As described above, in the multi-layer substrate according to the first aspect, the insulating and conductive bonding materials provide mechanical and mechanical bonding.
Since passive elements are formed between a plurality of electrically connected blocks, passive elements are formed only in the uppermost layer or lowermost layer of a conventional multilayer substrate, or passive elements are formed in a build-up layer. The limitations on the number of passive elements and restrictions on circuit characteristics that occur when elements are formed are eliminated. In addition, since the multilayer substrate is divided into a plurality of stacked blocks, the range of selecting the material of the insulating layer for each block is expanded, and the circuit characteristics of the multilayer substrate are improved, and the size and weight of the multilayer substrate are reduced. Greatly contribute to the progress of

According to a second aspect of the present invention, there is provided the multilayer substrate according to the first aspect, wherein a concave portion or a through hole is provided at a predetermined position of the insulating bonding material, and the passive element is provided in the concave portion or the through hole. With the configuration in which the passive elements are housed, the passive elements can be completely protected from mechanical pressure from the stacked adjacent blocks, and deterioration of the reliability of the passive elements can be prevented.

In the multilayer substrate according to the first aspect, the insulating layers of the plurality of blocks are formed by firing a green sheet made of alumina, glass ceramic, aluminum nitride, silicon nitride, zirconium, or a mixture thereof. It is preferable that it is formed by forming. Then, among these materials, the insulating layers of the plurality of blocks may be made of the same material. in this case,
This is advantageous in procuring materials and simplifying the manufacturing process. Further, the insulating layer of a predetermined block of the plurality of blocks may be made of a material different from that of the insulating layers of the other blocks. In this case, it is possible to select the material of the insulating layer for each block to optimize the circuit characteristics, heat radiation characteristics, dielectric constant, etc. Compared to the fact that the material of the insulating layer had to be the same or a similar material, the material has a wider range and greatly contributes to the improvement of the circuit characteristics of the multilayer substrate, the reduction in size and weight, and the like.

Further, in the multilayer substrate according to the first aspect, the insulating layer of a predetermined block of the plurality of blocks may be formed of an insulating flat plate whose surface is subjected to insulation processing such as enamel processing, or an organic material or an insulating material. For example, it may be a rigid insulating flat plate made of an inorganic material such as a glass material or a mica material.

Further, in the multilayer substrate according to the first aspect, as the insulating bonding material, low-temperature melting glass, polyimide, epoxy resin, alumina, glass ceramic,
Aluminum nitride, silicon nitride, or zirconium,
Alternatively, it is preferable to use a mixture thereof.

In the multilayer substrate according to the first aspect, the conductive bonding material may be copper, silver, an alloy of silver and platinum, an alloy of silver and palladium, molybdenum, or tungsten, or a mixture thereof. It is preferred to use

A method of manufacturing a multi-layer substrate according to a ninth aspect is a method of manufacturing a multi-layer substrate in which a passive element is built, wherein after forming a plurality of green sheets, each of the plurality of green sheets is formed. A step of forming a through hole and a wiring conductor, and among a plurality of green sheets, a predetermined plurality of green sheets are laminated and fired,
Or a step of baking one green sheet to form a plurality of blocks each including a plurality of layers or a single layer of an insulating layer, and forming a plurality of blocks on an insulating layer which is a surface layer of a predetermined block. A step of forming a passive element, an insulating bonding material and a conductive bonding material are interposed between each of the plurality of blocks, and the blocks adjacent to each other by the insulating bonding material and the conductive bonding material are mechanically Electrically bonding. In addition,
Here, "to mechanically and electrically join blocks adjacent to each other by an insulating bonding material and a conductive bonding material" means to mechanically join blocks adjacent to each other by an insulating bonding material, and This means that the through holes of the blocks adjacent to each other and the wiring conductor or the passive element are electrically joined by the joining material. This also applies to the following description.

As described above, in the method for manufacturing a multilayer substrate according to the ninth aspect, a plurality of green sheets are stacked and fired, or one green sheet is fired to convert a plurality of or single insulating layers. After forming a plurality of blocks, by forming a passive element on an insulating layer that is a surface layer of a predetermined block of the plurality of blocks,
In forming this passive element, it is not necessary to consider the firing temperature of the green sheet, shrinkage during firing and shrinkage error accompanying the firing as in the conventional case, so that the forming conditions for realizing desired characteristics are directly set. It is possible to set a passive element having a small variation in characteristics by being built in the multilayer substrate. At the same time, the range of choices for materials such as electrodes, resistor layers, and dielectric layers that constitute passive elements is expanded,
It contributes to reduction of manufacturing cost and higher performance of passive elements.

Since a passive element is formed on the rigid insulating layer after firing, for example, a thin film forming process using a sputtering apparatus or a CVD apparatus used for forming a semiconductor element is used. An electrode, a resistor layer, a dielectric layer, and the like that constitute a passive element can be formed with high precision, and a high-performance passive element with improved characteristics can be formed. In particular, when the passive element is a capacitor, it is possible to perform a smoothing process (such as a glaze process) on the surface of the insulating layer, and it is also possible to make the dielectric layer thin with high precision and uniformity. Capacitance capacitors are realized.

After a plurality of blocks are formed through the green sheet baking process, the work can be performed simultaneously for each block, so that the manufacturing period can be shortened as compared with the conventional case. You. In the conventional case where a passive element is formed on the uppermost layer of a ceramic substrate and a build-up layer is further formed thereon, after firing the green sheet, the substrate surface is smoothed (glaze processing or the like), and the resistance element is formed. The entire ceramic substrate was repeatedly subjected to various thermal histories, such as electrode formation of a capacitor, heat treatment of a resistor, over-glass treatment, heat treatment of a dielectric for a capacitor, and heat treatment for curing a resin when forming a build-up layer. On the other hand, since the passive elements are formed for each block here, the heat treatment required for forming the passive elements can be performed at the minimum necessary temperature and number of times for each block, and the heat history received by the entire ceramic substrate is This greatly reduces the deterioration of the ceramic substrate and the passive elements incorporated therein due to thermal history, and improves its reliability. To improve.

A method of manufacturing a multi-layer substrate according to claim 10 is a method of manufacturing a multi-layer substrate in which passive elements are built, wherein after forming a plurality of green sheets, each of the plurality of green sheets is formed. Forming a through-hole and a wiring conductor on a green sheet; forming a passive element on a predetermined green sheet among a plurality of green sheets; and forming the predetermined green sheet on which the passive element is formed as an uppermost layer. Laminating and firing a plurality of green sheets, or firing one green sheet to form a plurality of blocks made up of a plurality of or single insulating layers, and a step of trimming passive elements And an insulating bonding material and a conductive bonding material interposed between each block of the plurality of blocks, and adjacent to each other by the insulating bonding material and the conductive bonding material. Characterized in that it has that block mechanically, and a step of electrically joined, the.

As described above, in the method for manufacturing a multilayer substrate according to the tenth aspect, after a passive element is formed on a predetermined green sheet, a plurality of green sheets on which the passive element is formed are used as an uppermost layer. Firing green sheets or firing one green sheet,
Although a plurality of blocks composed of a plurality of layers or a single insulating layer are formed, a step of trimming the passive element is provided thereafter, so that the passive element is shrunk by firing of the green sheet. Even if the characteristics fluctuate, similar to the case where the passive element is formed in the uppermost layer portion of the conventional multilayer substrate, the characteristic of the passive element can be set within a predetermined target value range by the trimming process. A passive element having a small variation in characteristics is formed by being built in the multilayer substrate.

Further, as in the case of manufacturing the multi-layer substrate according to the ninth aspect, it is not necessary to consider the firing temperature of the green sheet, shrinkage during firing and shrinkage error accompanying the firing, and the electrode constituting the passive element is not required. Since the range of choices of materials such as a resistor layer and a dielectric layer is expanded, it contributes to a reduction in manufacturing cost and an increase in performance of a passive element. In addition, after a plurality of blocks are formed through a firing process of the green sheet on which the passive elements are formed, it is possible to work on each block simultaneously and in parallel, thereby shortening the manufacturing period.

The method for manufacturing a multi-layer substrate according to claim 11 is a method for manufacturing a multi-layer substrate in which passive elements are built, wherein after forming a plurality of green sheets, each of the plurality of green sheets is formed. A step of forming a through hole and a wiring conductor, and among a plurality of green sheets, a predetermined plurality of green sheets are laminated and fired,
Or a step of baking one green sheet to form a plurality of first blocks each including a plurality of layers or a single layer of a first insulating layer, and among the plurality of first blocks,
A step of forming a passive element on a first insulating layer forming a surface layer of a predetermined block; and a second insulating plate which is an insulating plate in which the surface of a metal plate is insulated or a rigid insulating plate made of an organic or inorganic material. Forming a through hole and a wiring conductor in the layer to form a second block, and interposing an insulating bonding material and a conductive bonding material between each of the plurality of first and second blocks; And mechanically and electrically joining adjacent blocks with each other by using the insulating bonding material and the conductive bonding material.

As described above, in the method of manufacturing a multilayer substrate according to the eleventh aspect, a plurality of green sheets are stacked and fired, or one green sheet is fired to convert a plurality of or single insulating layers. 10. The method according to claim 9, wherein after forming a plurality of first blocks, a passive element is formed on a first insulating layer which is a surface layer of a predetermined block of the plurality of first blocks. And the second insulating layer made of a second insulating layer which is a rigid insulating flat plate made of an organic material or an inorganic material while having the same effect as in the case of manufacturing the multi-layer substrate according to the present invention. By forming the block, the width of the material of the layer configuration of the multilayer substrate is increased, which contributes to the improvement of the circuit characteristics of the multilayer substrate, the reduction in size and weight, and the like.

A method of manufacturing a multilayer substrate according to a twelfth aspect is a method of manufacturing a multilayer substrate having a built-in passive element, wherein after forming a plurality of green sheets, each of the plurality of green sheets is formed. Forming a through-hole and a wiring conductor on a green sheet; forming a passive element on a predetermined green sheet among a plurality of green sheets; and forming the predetermined green sheet on which the passive element is formed as an uppermost layer. Laminating and firing a plurality of green sheets, or firing one green sheet to form a plurality of first blocks comprising a plurality of or a single layer of a first insulating layer; And trimming through a second insulating layer which is an insulating flat plate obtained by insulating the surface of a metal flat plate or a rigid insulating flat plate made of an organic or inorganic material. Forming a second block by forming the first and second blocks and an insulating bonding material and a conductive bonding material between each of the plurality of first and second blocks; Mechanically and electrically joining blocks adjacent to each other with the insulating bonding material and the conductive bonding material.

As described above, in the method for manufacturing a multilayer substrate according to the twelfth aspect, after a passive element is formed on a predetermined green sheet, a plurality of green sheets on which the passive element is formed are used as an uppermost layer. Firing green sheets or firing one green sheet,
A plurality of first insulating layers comprising a plurality of or a single layer of a first insulating layer;
After forming the block, the step of performing the trimming of the passive element is provided, so that the same operation as in the case of manufacturing the multilayer substrate according to claim 10 is obtained, and the insulation of the surface of the metal flat plate is performed. By forming a second block made of a second insulating layer which is a flat plate or a rigid insulating plate made of an organic material or an inorganic material,
Since the width of the material of the layer configuration of the multilayer substrate is increased, it contributes to the improvement of the circuit characteristics of the multilayer substrate, the reduction in size and weight, and the like.

In the method for manufacturing a multilayer substrate according to the eleventh or twelfth aspect, it is possible to form a passive element on the second insulating layer which is a surface layer of the second block.

In the method for manufacturing a multilayer substrate according to the ninth to twelfth aspects, the material of the plurality of green sheets may be alumina, glass ceramic, aluminum nitride, silicon nitride, zirconium, or a mixture thereof. It is preferred to use. And among these materials, a plurality of green sheets may be formed using the same material. This is advantageous in terms of material procurement and simplification of the manufacturing process. Alternatively, a plurality of green sheets may be formed using different materials, and an insulating layer of a predetermined block of the plurality of blocks may be formed of a material different from an insulating layer of another block. The first insulating layer of a predetermined block of the first blocks may be made of a material different from that of the first insulating layer of another block. In this case, for each block, it is possible to select the circuit characteristics to be formed, the heat radiation characteristics, the dielectric constant, the firing temperature, and the like. Compared to what had to be done, the material has a wider range, which greatly contributes to the improvement of the circuit characteristics of the multi-layer substrate and the progress of miniaturization and weight reduction.

According to a eighteenth aspect of the present invention, in the method of manufacturing a multilayer substrate according to any one of the ninth to twelfth aspects, the blocks adjacent to each other are formed by an insulating bonding material and a conductive bonding material. When mechanically and electrically bonded, an insulating paste and a conductive paste are used as an insulating bonding material and a conductive bonding material, respectively. Selectively apply to one or both of them, place them in a predetermined position, and closely contact blocks adjacent to each other via an insulating paste and a conductive paste, and then heat and pressurize to a predetermined temperature. That the selective application of the insulating paste and the conductive paste can be easily and accurately performed using, for example, a printing method. , The cost of production of the multi-layer substrate is inexpensive. Further, when closely adjoining blocks, the passive element formed on the insulating layer forming the surface layer of the predetermined block is absorbed into the insulating paste and the conductive paste while maintaining its shape, and is applied to the passive element. Since it is possible to reduce the applied mechanical pressure, deterioration of the reliability of the passive element is prevented.

According to a nineteenth aspect of the present invention, in the method of manufacturing a multi-layer substrate according to any one of the ninth to twelfth aspects, the blocks adjacent to each other are formed by the insulating bonding material and the conductive bonding material. At the time of mechanical and electrical bonding, an insulating flat plate is used as an insulating bonding material, and a conductive paste filled in a through hole at a predetermined position of the insulating flat plate is used as a conductive bonding material. By adhering adjacent blocks to each other through an insulating flat plate filled with a conductive paste in a through hole at a predetermined position, the insulating paste having a desired thickness is formed by heating and pressing to a predetermined temperature. Since it is possible to easily adjust the distance between adjacent blocks using a flexible flat plate, it is possible to reduce the influence of each block by separating the joining surfaces of the blocks to some extent. In addition, since the heat treatment for drying and solidifying after application, which is required when using the insulating paste as the insulating bonding material, becomes unnecessary or reduced, the heat history received by the passive element is reduced, and its reliability is reduced. The properties are improved.

According to a twentieth aspect of the present invention, in the method for manufacturing a multi-layer substrate according to any one of the ninth to twelfth aspects, the blocks adjacent to each other are formed by an insulating bonding material and a conductive bonding material. When mechanically and electrically bonded, an insulating paste and a first conductive paste are used as an insulating bonding material and a conductive bonding material, respectively, and the insulating paste and the first conductive paste are connected to each other in a block. While selectively applying to one or both of the opposing block surfaces and disposing them at predetermined positions, an insulating flat plate is used as an insulating bonding material, and a predetermined position of the insulating flat plate is penetrated as a conductive bonding material. The insulating paste, the first conductive paste, and the second conductive paste are used to fill the through holes at predetermined positions by using the second conductive paste filled in the holes. After closely adhering blocks adjacent to each other via an insulating flat plate, by heating and pressing to a predetermined temperature, that is, by using an insulating paste and an insulating flat plate together as an insulating bonding material, Reduces the mechanical pressure applied to passive elements when closely adjoining blocks, prevents deterioration of the reliability of passive elements, and reduces the influence of each other by adjusting the distance between joining blocks It becomes possible to do.

The method of manufacturing a multilayer substrate according to claim 21 is the method of manufacturing a multilayer substrate according to claim 19 or 20, further comprising the step of forming a recess or a through hole at a predetermined position on the insulating flat plate. When the blocks adjacent to each other are closely adhered to each other via the insulating flat plate, the passive elements formed on the insulating layer forming the surface layer of the blocks adjacent to each other are formed into the concave portions or the through holes formed in the insulating flat plate. With this configuration, the passive element can be almost completely protected from mechanical pressure when the adjacent blocks are brought into close contact with each other, so that the reliability of the passive element is prevented from deteriorating.

In the method for manufacturing a multilayer substrate according to the eighteenth aspect, the insulating paste may be a low-melting glass, polyimide, epoxy resin, alumina, glass ceramic, aluminum nitride, silicon nitride, zirconium, or any of these. It is preferable to use a mixture obtained by kneading the mixture into a paste with a predetermined solvent.As the conductive paste, copper, silver, an alloy of silver and platinum, an alloy of silver and palladium, molybdenum, or tungsten Alternatively, it is preferable to use a material obtained by kneading a conductive material having a mixture thereof as a main component in a paste with a predetermined solvent.

In the method of manufacturing a multilayer substrate according to the nineteenth aspect, it is preferable to use a low-melting glass as the insulating flat plate, and to use the conductive paste as the conductive paste.
Copper, silver, alloy of silver and platinum, alloy of silver and palladium,
It is preferable to use a conductive material mainly containing molybdenum, tungsten, or a mixture thereof kneaded in a paste with a predetermined solvent.

In the method for manufacturing a multilayer substrate according to the twentieth aspect, the insulating paste may be a low-melting glass, polyimide, epoxy resin, alumina, glass ceramic, aluminum nitride, silicon nitride, or zirconium, or It is preferable to use a mixture obtained by kneading the mixture into a paste with a predetermined solvent. As the insulating flat plate, it is preferable to use a low-melting glass, and the first conductive paste and the second conductive paste are used. As the conductive paste, a conductive material containing copper, silver, an alloy of silver and platinum, an alloy of silver and palladium, molybdenum or tungsten, or a mixture thereof as a main component is kneaded into a paste with a predetermined solvent. It is preferable to use the one obtained.

In the method for manufacturing a multi-layer substrate according to the twenty-fourth aspect, when an insulating paste and an insulating flat plate are used together as an insulating bonding material, a method for mechanically and electrically bonding blocks adjacent to each other is used. From the viewpoint of obtaining good bonding characteristics, the insulating paste and the insulating flat plate may be made of the same material, and the first conductive paste and the second conductive paste may be made of the same material. desirable.

The method of manufacturing a multi-layer substrate according to claim 26 is the method of manufacturing a multi-layer substrate according to claim 18 by selectively coating one or both of opposing block surfaces of mutually adjacent blocks. After the blocks adjacent to each other are brought into close contact with each other via the insulating paste and the conductive paste arranged at a predetermined position, when heating and pressing to a predetermined temperature, at this predetermined temperature, the insulating paste and the conductive paste Is melted and the conductive paste is made conductive, so that mechanical and electrical bonding between adjacent blocks can be sufficiently ensured.

According to a twenty-seventh aspect of the present invention, there is provided a method of manufacturing a multi-layer board according to the nineteenth aspect, wherein the conductive paste is provided via an insulating flat plate filled in a through hole at a predetermined position. After the blocks adjacent to each other are brought into close contact with each other and heated and pressed to a predetermined temperature, the insulating plate and the conductive paste are melted and the conductive paste is made conductive at the predetermined temperature. As a result, good mechanical and electrical connections between adjacent blocks are ensured. Then, at this time, a concave portion or a through hole is formed at a predetermined position of the insulating flat plate, and when a passive element is stored in the concave portion or the through hole when closely adjoining blocks via the insulating flat plate. Since the mechanical pressure applied to the passive element is reduced by the concave portion or the through hole, deterioration of the reliability of the passive element is prevented.

According to a twenty-eighth aspect of the present invention, in the method for manufacturing a multi-layer substrate according to the twentieth aspect, the method is applied by selectively applying one or both of opposing block surfaces of mutually adjacent blocks. After the insulating paste, the first conductive paste, and the second conductive paste arranged at predetermined positions are brought into close contact with adjacent blocks via an insulating flat plate filled in through holes at predetermined positions, When heating and pressurizing to a predetermined temperature, the insulating plate, the insulating paste, the first conductive paste, and the second conductive paste are melted at the predetermined temperature and the first conductive paste is melted. With the structure in which the paste and the second conductive paste are made conductive, good mechanical and electrical bonding between adjacent blocks is ensured. Then, at this time, a concave portion or a through hole is formed at a predetermined position of the insulating flat plate, and when a passive element is stored in the concave portion or the through hole when closely adjoining blocks via the insulating flat plate. Since the mechanical pressure applied to the passive element is reduced by the concave portion or the through hole, deterioration of the reliability of the passive element is prevented.

The method of manufacturing a multilayer substrate according to claim 29 is the method of manufacturing a multilayer substrate according to claim 20, wherein the method is performed by selectively applying to both opposing block surfaces of adjacent blocks. After the insulating blocks, the first conductive paste, and the second conductive paste disposed at the positions are brought into close contact with adjacent blocks via the insulating flat plate filled in the through holes at the predetermined positions, the predetermined paste is applied. When heating and pressurizing to a temperature, this predetermined temperature is set lower than the melting temperature of the insulating flat plate, while at this predetermined temperature, the insulating paste, the first conductive paste,
And the second conductive paste is melted, and the first conductive paste and the second conductive paste are made conductive, so that the mechanical bonding and the electrical bonding between adjacent blocks are performed. Is secured well. Then, at this time, a concave portion or a through hole is formed at a predetermined position of the insulating flat plate, and when the adjacent blocks are closely attached via the insulating flat plate, the passive element is housed in the concave portion or the through hole. Because the insulating flat plate is not melted, the recesses or through holes are not formed, and the passive elements are held in the housed state. The element can be completely protected, and the deterioration of the reliability of the passive element can be prevented.

According to a thirty-fourth aspect of the present invention, in the method for manufacturing a multi-layer substrate according to the eighteenth aspect, the insulating paste and the conductive paste are provided on the surface of one or both adjacent blocks. When the conductive paste is selectively applied and placed at a predetermined position, the thickness of the conductive paste is formed to be larger than the thickness of the insulating paste. Better secured.

The method for manufacturing a multilayer substrate according to claim 31 is the method for manufacturing a multilayer substrate according to claim 19, wherein the conductive bonding material is filled in a through hole at a predetermined position of an insulating flat plate. When the conductive paste is used, the thickness of the conductive paste is formed to be thicker than the thickness of the insulating flat plate, so that the electric connection between the blocks adjacent to each other is better ensured.

[0096]

BRIEF DESCRIPTION OF THE DRAWINGS FIG.
An embodiment of the present invention will be described. (First Embodiment) FIG. 1 is a schematic sectional view showing a ceramic multilayer substrate according to a first embodiment of the present invention.
5 are cross-sectional views showing respective blocks constituting the ceramic multilayer substrate of FIG. 1, and FIGS. 6 (a) and 6 (b)
7A and 7B are a cross-sectional view and a plan view, respectively, showing a resistive element built in the ceramic multilayer substrate of FIG. 1, and FIG. 7 is a cross-sectional view showing a capacitor built in the ceramic multilayer substrate of FIG.

As shown in FIG. 1, the ceramic multilayer substrate according to the present embodiment has four blocks B1, B2,
It is divided into B3 and B4, and includes resistance elements R1 and R2 as passive elements and capacitors C1 and C2. Then, these four blocks B1, B2, B3,
B4 is sequentially laminated, and is mechanically and electrically bonded by an insulating bonding material 11 and a conductive bonding material 12 interposed between the blocks.

Also, as shown in FIG.
1, two insulating layers L made of, for example, AlN
1 and L2 are stacked, a plurality of wiring conductor layers M1 are formed on the insulating layer L1, and a solid wiring conductor layer M2 is formed between the insulating layers L1 and L2. In addition, these insulating layers L1 and L2 each have a wiring conductor layer M
1, a plurality of through holes 13 connected to M2.

Here, the reason that the wiring conductor layer M2 is a solid conductor layer is to function as a ground layer for forming a coaxial line (microstrip line) on the insulating layer L1.

Also, as shown in FIG.
2, two insulating layers L3 and L4 made of, for example, high-purity alumina are laminated, and a plurality of wiring conductor layers M3 are formed on the insulating layer L3.
A plurality of wiring conductor layers M4 are formed between L4.
Further, a plurality of through holes 13 connected to the wiring conductor layers M3 and M4 are formed in these insulating layers L3 and L4, respectively. On the insulating layer L3, resistance elements R1 and R2 as passive elements are formed. These resistance elements R1 and R2 are, as shown in FIGS. 6A and 6B, two electrodes 1 opposed to each other formed on an insulating layer L3.
4a and 14b, and a resistor layer 15 connected to these two electrodes 14a and 14b.

Also, as shown in FIG.
3 is a single insulating layer L made of, for example, glass ceramic.
5 and a plurality of wiring conductor layers M on the insulating layer L5.
3 are formed. In the insulating layer L5, a plurality of through holes 13 connected to the wiring conductor layer M5 are formed. Further, on the insulating layer L5, capacitors C1 and C2 as passive elements are formed. These capacitors C1 and C2 are, as shown in FIG.
5, a lower electrode 16 having a thickness of about several μm to 30 μm, and a thickness of 0.01 μm to 0.2 μm on the lower electrode 16.
It is composed of a dielectric layer 18 formed via a barrier metal layer 17 of about 1 μm, a barrier metal layer formed on the dielectric layer 18 and an upper electrode 19.

Here, the barrier metal layer 17 is the lower electrode 1
6 and functions to prevent diffusion between the lower electrode 16 and the dielectric layer 18 and to prevent oxidation of the lower electrode 16.

Then, such capacitors C1 and C2
Is obtained by the following equation. C = ε ₀ · ε · (A / d) where ε ₀ : coefficient 8.854 × 10 ⁻¹² (F / m) ε: relative permittivity A: electrode area d: distance between electrodes

Also, as shown in FIG.
In No. 4, four insulating layers L6, L7, L8, L9 made of, for example, zirconia are laminated, and a plurality of wiring conductor layers M6 are formed on the insulating layer L6. Between the insulating layers L7 and L8, and the insulating layer L8,
L9, a plurality of wiring conductor layers M7, M8, M
9, and a plurality of wiring conductor layers M10 are formed on the lower surface of the insulating layer L9. In addition, these insulating layers L
6, L7, L8, and L9 have wiring conductor layers M6,
A plurality of through holes 13 connected to M7, M8, M9, M10 are formed.

Here, the reason that the wiring conductor layer M9 is a solid conductor layer is to function as a ground layer for forming a coaxial line (microstrip line) on the lower surface of the insulating layer L9. Although not shown, the conductive bonding material 12 that electrically connects the blocks B1, B2, B3, and B4 includes insulating layers L1, L2,.
It is connected to the wiring conductor layers M2, M3,..., M9 formed therebetween.

Next, the materials used for each element constituting the ceramic multilayer substrate shown in FIGS. 1 to 7 will be described. The insulating layers L1 and L2 of the block B1, the insulating layers L3 and L4 of the block B2, and the insulating layer L of the block B3
5, and the insulating layers L6, L7,..., L9 of the block B4.
Are made of AlN, high-purity alumina, glass ceramic, and zirconia, respectively, as described above.
The wiring conductor layers M1, M2,..., M10 and the through holes 13 are made of, for example, Cu, Ag, Ag-Pt, Ag-P.
The material is a simple substance or a mixture such as d, W, and Mo.

The insulating bonding material 11 is formed by melting an insulating paste made of low-temperature melting glass such as spin-on glass made of, for example, alkoxide silane or alcohol. Alternatively, polyimide or epoxy resin or an insulating paste obtained by kneading the same ceramic material as the insulating layers L1, L2,..., L9 with water or alcohol may be used. In addition,
In the case where a material obtained by melting an insulating paste made of a glass material is used as the insulating bonding material 11, the block B
1, B2,..., B4 have the advantage that the mechanical bonding force is extremely strong, the airtightness of the connection portion is maintained, and the same thermal expansion coefficient as glass ceramics is easily obtained.

It is preferable that the conductive bonding material 12 is basically selected from the same type of conductive material as the wiring conductive layers M1, M2,... From, Cu, Ag, Ag-Pt, Ag-P
A material obtained by melting a conductive paste obtained by kneading a simple substance or a mixture of d, W, Mo and the like in a solvent such as alcohol is used.

The electrodes 14a and 14b constituting the resistance elements R1 and R2 are, for example, Cu, Ag, Ag-Pt,
A material such as Ag-Pd is used, and a material such as RuO ₂ , LaB ₆ , or SnO ₂ is used for the resistor layer 15, but various types may be used depending on the material and characteristics of the insulating layer L 3 serving as a base substrate. Is used.

The lower electrodes 16 forming the capacitors C1 and C2 are made of, for example, Cu, Ag, Ag-Pt, Ag-Pt.
Pd or the like is used as a material. The barrier metal layer 17 is made of, for example, W, Ru, Pt, Au, Pd, Ti, or the like.
It has a structure such as a single layer or a plurality of layers. Further, the dielectric layer 1
8 includes, for example, tantalum oxide having a relative dielectric constant of about 20 to 28, BaTiO ₃ having a relative dielectric constant of about 2000, SrTiO _{3 having} a relative dielectric constant of about 150 to 200, and a relative dielectric constant of 500.
A material such as about 860 BaSrTiO ₃ is used. Note that the barrier metal layer and the upper electrode 19 use the same material as the barrier metal layer 17 and the lower electrode 16, respectively.

Next, a manufacturing process of the ceramic multilayer substrate shown in FIG. 1 will be described with reference to FIGS. Here, FIG. 8 is a flowchart for explaining the manufacturing process of the ceramic multilayer substrate of FIG.
3A to 3D are process cross-sectional views for explaining a manufacturing process of the ceramic multilayer substrate in FIG. 1.

First, the respective blocks B1, B2,..., B4 constituting the ceramic multilayer substrate of FIG. 1 are formed. That is, as shown in FIGS. 8 and 9 (a), 9 (b),..., (D), each block B
Nine green sheets G1, G2; G3, G4; G5; G6, G7 each having a thickness of about 10 μm to 250 μm and a vertical and horizontal dimension of about 50 mm to 200 mm for each of 1, B2,.
.., G9 are formed. At this time, each block B1, B
2,..., B4 use different ceramic materials. That is, AlN is used as a material of the two green sheets G1 and G2 of the block B1, high-purity alumina is used as a material of the two green sheets G3 and G4 of the block B2, and one green sheet G5 of the block B3 is used. Glass ceramic is used as the material, and zirconia is used as the material of the four green sheets G6, G7,..., G9 of the block B4.

Subsequently, these nine green sheets G
1, G2,..., G9, for example, a hole diameter of 50 mm to 200 m
Drill holes for about m through holes. As a method for drilling through holes, a method using a drill, a method using a mold, a method using a laser, or the like is used in the same manner as in a normal case. Then, for example, Cu, Ag, Ag-Pt, Ag-P
A conductor made of a simple substance or a mixture such as d, W, and Mo is buried to form a through hole 13. As a method of embedding the conductor in the through hole, a screen printing method is used, for example, as in the normal case.

Subsequently, on the upper surfaces of the green sheets G1, G2,..., G8 and the upper and lower surfaces of the green sheet G9, for example, the same type of conductor printing as the conductor used to form the through holes 13 is used. Forming wiring conductor layers M1, M2,..., M10 such as receiving lands for through holes, wiring patterns, component lands, and the like.

Subsequently, green sheets G1, G2; G3, G4; G6, G7, green sheets G1, G2;
.., G9 are aligned and sequentially stacked, and then a laminating press is performed for each of the blocks B1, B2, and B4 so that no air or the like remains between the green sheets. In addition,
Since the block B3 is formed of a single-layer green sheet G5, this laminating press step is unnecessary.

Subsequently, each block B1, B2,..., B4
Green sheets G1, G2;
3, G4; G5; G6, G7,..., G9 are cut to a desired size. And the green sheets G1, G2; G3, G4; G5; G6, G7,
... The binder existing in the green sheet is removed while heating G9 and possibly applying pressure.

Next, FIGS. 8 and 10 (a), (b),
As shown in (d), each block B1, B2,
…, Firing is performed for each B4, and each green sheet G1, G
G3, G4; G5; G6, G7,..., G9 are formed by insulating layers L1, L2; L3, L4; L5; L6, L7,.
To change. At this time, each block B1, B2,.
Green sheets G1, G2; G3, G4; G for each B4
5: Since the ceramic materials of G6, G7,..., G9 are different, the firing temperatures are also different. For example, in the case of AlN or high-purity alumina, the temperature is 1000 to 1300 ° C, and in the case of glass ceramic, the temperature is around 900 ° C.

Thus, a block B1 in which two insulating layers L1 and L2 are stacked, a block B2 in which two insulating layers L3 and L4 are stacked, a block B3 including one insulating layer L5, , L9, and the block B4 in which the insulating layers L6, L7,..., L9 are stacked.

Next, the resistance elements R1 and R2 built in the ceramic multilayer substrate of FIG. 1 are formed. That is, FIG.
11 (a), (b),..., (D), the resistive elements R1, R2 are formed on the uppermost insulating layer L3 of the block B2. Specifically, as shown in FIG. 11B and FIG. 6, Cu, Ag, A is formed on the insulating layer L3 by a method such as printing, plating, or sputtering.
Two electrodes 14a and 14b made of g-Pt or the like are formed facing each other. Subsequently, for example, by a printing method, for example, a RuO ₂ system, La connected to the two electrodes 14a and 14b,
A resistor made of B ₆ , SnO _2, or the like is applied, dried, and then fired at a temperature of, for example, about 900 ° C. to form a resistor layer 15. Thus, as shown in FIG. 10B, the resistance elements R1 and R2 are formed on the uppermost insulating layer L3 of the block B2.

Further, capacitors C1 and C2 built in the ceramic multilayer substrate of FIG. 1 are formed. That is, FIG.
11 (a), (b),..., (D), the capacitor C1,
Form C2. Specifically, as shown in FIG. 11C and FIG. 7, several μm on the surface of the insulating layer L5.
After performing a smoothing process such as a glaze process for flattening the degree of unevenness, for example, using a method such as printing, Cu, Ag, Ag-
A lower electrode 16 made of Pt, Ag-Pd or the like is formed.
Subsequently, after the lower electrode 16 is dried, for example, W,
Forming a single-layer or multi-layer barrier metal layer 17 made of Ru, Pt, Au, Pd, Ti, etc., and forming the lower electrode 1
6 is coated. The selection of the material at this time is performed in consideration of the electrode material, dielectric, sintering temperature, atmosphere, and the like.

Subsequently, tantalum oxide, BaTiO ₃ , SrTi is formed on the barrier metal layer 17 by using a method such as printing, spin coating, sputtering, or CVD.
A dielectric layer 18 made of O ₃ , BaSrTiO ₃ or the like is formed. Further, a barrier metal layer 17 is formed on the dielectric layer 18.
Then, a barrier metal layer and an upper electrode 19 are formed in the same manner as in the case of the lower electrode 16. In addition, for example, the lower electrode 1
In the case where the dielectric layer 6, the dielectric layer 18, and the like are formed by a printing method, a baking process is performed, for example, at about 700 ° C. Thus, as shown in FIG. 10C, the block B3
The capacitors C1 and C2 are formed on the insulating layer L5.

Then, mechanical and electrical connections are made between the blocks B1, B2,..., B4. 8 and FIG.
As shown in (a), an opening for exposing the end of the through hole 13 is provided on the lower surface of the lowermost insulating layer L2 of the block B1 by, for example, a method such as printing to form the insulating bonding material 11. I do. Specifically, for example, an insulating paste made of low-melting glass such as spin-on glass made of alkoxide silane / alcohol is applied.

Subsequently, the conductive bonding material 12 is formed in the opening of the insulating bonding material 11 on the lower surface of the insulating layer L2 by connecting the conductive bonding material 12 to the exposed end of the through hole 13 by a method such as printing or potting. . Specifically, for example, C
A conductive paste obtained by kneading a simple substance or a mixture of u, Ag, Ag-Pt, Ag-Pd, W, Mo and the like using a solvent such as alcohol is applied.

It is desirable that the specific selection of the material of the insulating bonding material 11 and the conductive bonding material 12 be performed in consideration of the mutual melting temperature, the coefficient of thermal expansion, and the like in the next block connecting step. . Also, as the material of the conductive bonding material 12, it is preferable to select basically the same kind of conductive material as the through hole 13 and the wiring conductive layers M1, M2,..., M9 to be electrically connected. Further, here, the conductive bonding material 12 is formed after the insulating bonding material 11 is formed, but the order of forming the insulating bonding material 11 and the conductive bonding material 12 may be reversed.

Similarly, as shown in FIGS. 12 (b) and 12 (c), the insulating joint L4 of the lowermost layer of the block B2 and the lower surface of the insulating layer L5 of the block B3 are insulated at predetermined positions. The material 11 and the conductive bonding material 12 are formed. At this time, FIGS. 13A and 13B are enlarged views of FIGS.
As shown in (b), the position of the conductive bonding material 12 applied to the lower surface of the insulating layer L2 of the block B1 is different from that of the block B2.
Corresponds to the position of the wiring conductor layer M3 on the upper surface of the insulating layer L3, and when the blocks B1 and B2 are laminated, the conductive bonding material 12
Are interposed between the through hole 13 of the insulating layer L2 and the wiring conductor layer M3 of the insulating layer L3.

FIG. 1 is an enlarged view of a portion A in FIG.
As shown in FIG. 3C, the thickness of the conductive bonding material 12 is made larger than the thickness of the insulating bonding material 11 so that both blocks B
When B1 and B2 are stacked, a good electrical connection between the through hole 13 of the insulating layer L2 and the wiring conductor layer M3 of the insulating layer L3 with the conductive bonding material 12 interposed therebetween is ensured.

Further, as shown in FIGS. 14 (a) and 14 (b) in which parts of FIGS. 12 (b) and (c) are enlarged, a conductive bonding material 12a formed on the lower surface of the insulating layer L4 of the block B2. ,
12b corresponds to the insulating layer L5 of the block B3.
Corresponds to the position of the upper electrode 19 of the capacitor C1 on the upper surface,
When the blocks B2 and B3 are laminated, the conductive bonding material 1
Either 2a or 12b is a through hole 1 in the insulating layer L4.
It is arranged to be interposed between one of 3a and 13b and the upper electrode 19 of the capacitor C1 on the upper surface of the insulating layer L5. Thus, one of the through holes 13a and 13b of the insulating layer L4 connected to the upper electrode 19 of the capacitor C1 via one of the conductive bonding materials 12a and 12b and the through hole of the insulating layer L5 connected to the lower electrode 16 of the capacitor C1. A predetermined capacitance value is obtained between the hole 13c.

The thickness of the insulating bonding material 11 formed on the lower surface of the insulating layers L2, L4, L5 of the blocks B1, B2, B3 is determined by the thickness of the insulating layers L3, L5 of the blocks B2, B3, B4 to be connected. Wiring conductor layers M3, M formed on the upper surface of L6
5, M6, resistance elements R1, R2, capacitors C1, C2
Is determined in consideration of the thickness and the like.

Subsequently, each block B1, B2,..., B4
Are aligned at predetermined positions and laminated. At this time, block B
2, the resistance element R formed on the upper surface of the insulating layers L3 and L5
1, R2 and the capacitors C1 and C2 are absorbed by the insulating bonding material 11 made of an insulating paste and the conductive bonding material 12 made of a conductive paste while maintaining their shapes. The mechanical pressure applied to C1 and C2 is reduced, and deterioration of the reliability is prevented.

Thereafter, the insulating bonding material 11 and the conductive bonding material 12 are heated and melted, and the conductive bonding material 12 made of a conductive paste having no conductivity when applied is made conductive. Thus, each block B1,
B2, B3, and B4 are mechanically and electrically bonded by the insulating bonding material 11 and the conductive bonding material 12 interposed between the blocks. Also, simultaneously pressurize each block B
The mechanical and electrical connection between 1, B2,..., B4 is made uniform and strong.

The heating temperature at this time, that is, the melting temperature of the insulating bonding material 11 and the conductive bonding material 12 is, for example, 4
The temperature is set to about 00 ° C to about 500 ° C. And this temperature is
, B4 at the time of forming the blocks B1, B2,..., B4 (1000-1300 ° C. when the ceramic material of the green sheet is AlN or high-purity alumina, and around 900 ° C. when the glass ceramic is glass ceramic); , R2, the firing temperature of the resistor layer 15 (about 900 ° C.) and the firing temperature of forming the capacitors C1, C2 (about 700 ° C.) are lower than the firing temperature of the resistor elements R1, R2, There is no effect on the characteristics of the capacitors C1 and C2. Conversely, the insulating bonding material 11 and the conductive bonding material 12 are melted and heated at a temperature that does not affect the characteristics and the like of the resistance elements R1 and R2 and the capacitors C1 and C2. Bonding material 1
As the second material, a material that satisfies these melting and heating conditions is selected. Thus, the ceramic multilayer substrate shown in FIG. 1 is manufactured.

As described above, according to the present embodiment, the green sheets G1, G2 are provided for each of the blocks B1, B2,.
2, G3, G4; G5; G6, G7,..., G9 are baked to form insulating layers L1, L2; L3, L4; L5; L6, L7,
, L9, and then the uppermost insulating layer L3 of the block B2
By forming the resistance elements R1 and R2 thereon and forming the capacitors C1 and C2 on the insulating layer L5 of the block B3, these resistance elements R1 and R2 and the capacitors C1 and C2 are formed.
When forming C2, it is not necessary to consider the firing temperature of the green sheet, shrinkage during firing and shrinkage error accompanying the firing as in the related art, so that the forming conditions for realizing desired characteristics are directly set. And the resistance elements R1, R2 and the capacitor C1,
C2 can be formed embedded in a ceramic multilayer substrate.

Further, since the same treatment as in the case of forming the passive element on the surface layer of the fired ceramic multilayer substrate can be performed, the electrodes 14 constituting the resistance elements R1 and R2 can be used.
a, 14b, the resistor layer 15, the lower electrode 16, the barrier metal layer 17, the dielectric layer 18, the barrier metal layer, the upper electrode 19, and the like constituting the capacitors C1 and C2 have a wider range of material choices. Reduction of the manufacturing cost by shortening the development period and the resistance elements R1, R2 and the capacitor C
1, C2 can contribute to higher performance.

The rigid insulating layers L3, L3
In order to form the resistive elements R1 and R2 and the capacitors C1 and C2 on the resistive element 5, the resistive elements R1 and R2 are formed by using a thin film forming process using a sputtering device or a CVD device used for forming a semiconductor device. Constituting electrode 14
a, 14b, the resistor layer 15, the lower electrode 16, the barrier metal layer 17, the dielectric layer 18, the barrier metal layer and the upper electrode 19 constituting the capacitors C1 and C2 can be formed with high precision. High-performance resistance elements R1, R2 and capacitors C1, C2 with improved characteristics can be formed. In particular, in the case of the capacitors C1 and C2, the surface of the insulating layer L5 can be smoothed,
Since the dielectric layer 18 can be thinned with high accuracy and uniformity, the capacitors C1 and C2 with high accuracy and high capacitance can be realized.

Also, green sheets G1, G2; G3,
G4; G5; G6, G7,...
1, L2; L3, L4; L5; L6, L7,..., L9, and a block B1 in which two insulating layers L1 and L2 are stacked.
And a block B2 in which two insulating layers L3 and L4 are stacked
After forming a block B3 composed of one insulating layer L5 and a block B4 in which four insulating layers L6, L7,..., L9 are stacked, each block B1, B2,.
Since the work can be performed simultaneously and simultaneously for each B4, the manufacturing period can be shortened as compared with the conventional case.

In addition, compared with the case where a passive element is formed on the uppermost layer of a conventional ceramic multilayer substrate and then a build-up layer is further formed thereon, the surface of the substrate is smoothed, the resistance element and the electrode of the capacitor are formed. Formation, resistor heat treatment,
The formation of the resistance elements R1, R2 and the capacitors C1, C2 without repeating overglass processing, dielectric heat treatment for capacitors, heat treatment for curing the resin in forming the build-up layer, etc. on the entire ceramic multilayer substrate. Since the necessary heat treatment may be performed to the minimum required temperature and number of times for only the blocks B2 and B3, the heat history received as the whole ceramic multilayer substrate is significantly reduced,
Ceramic multilayer substrate and resistance element R built therein
1, R2 and the capacitors C1, C2 can be prevented from deteriorating due to thermal history, and their reliability and the like can be improved.

The insulating layers L1 and L2 of the block B1 are made of AlN, and the insulating layers L3 and L3 of the block B2 are used.
Block B3 using high-purity alumina as the material of L4
By using glass ceramic as the material of the insulating layer L5, and using zirconia as the material of the insulating layers L6, L7,..., L9 of the block B4.
By using a different ceramic material for each of B2,..., B4, it is possible to select the circuit characteristics, heat radiation characteristics, dielectric constant, firing temperature, etc. to be formed for each of the blocks B1, B2,. As described above, the material of each of the insulating layers laminated in the ceramic multilayer substrate is not limited to the same or similar material, but the width of the material is widened, so that the circuit characteristics of the ceramic multilayer substrate can be improved, and the ceramic multilayer substrate can be reduced in size and weight. It can greatly contribute to progress.

Each block B1, B2, B3, B4
Insulating bonding material 11 and conductive bonding material 12 interposed therebetween
By using an insulating paste and a conductive paste as the above, mechanical and electrical joining between the blocks B1, B2, B3, B4 can be easily and satisfactorily secured, and the blocks B1, B2 ,..., B4, the insulating bonding material 11 with the built-in resistive elements R1, R2 and capacitors C1, C2 retained in their shapes.
And the conductive bonding material 12 to absorb the resistance element R1,
It is possible to reduce the mechanical pressure applied to R2 and the capacitors C1 and C2 to prevent the reliability thereof from deteriorating.

In the first embodiment, the insulating layers L1 and L2 are provided for each of the blocks B1, B2,.
L5, L6, L7,..., L9 are made of different ceramic materials such as AlN, high-purity alumina, glass ceramic, and zirconia. Of course, the same ceramic material may be used. For example, another ceramic material such as silicon nitride may be used.

It is not necessary to limit the material of the insulating layer to a ceramic material. For example, a metal flat plate made of iron, aluminum, stainless steel, or the like is insulated by enamel processing or the like, or an organic material or glass. A rigid insulating flat plate made of an inorganic material such as a material or a mica material may be used as the insulating layer. Then, it is also possible to use such an insulating plate as, for example, the insulating layer L5 forming the block B3, and form the capacitors C1 and C2 on the insulating layer L5.

In the first embodiment, the insulating bonding material 11 and the conductive bonding material 12 are used as the blocks B1,
The insulating layers L2, L4 and L5, which are the lower layers of B2 and B3, are formed on the lower surface, but instead of the blocks B2, B3,
It may be formed on the upper surface of the insulating layers L3, L5, L6, which are the upper layers of B4. Further, it may be formed on both the lower surfaces of the insulating layers L2, L4, L5 and the upper surfaces of the insulating layers L3, L5, L6.

(Second Embodiment) FIG. 15 shows a second embodiment of the present invention.
16 is a schematic cross-sectional view showing a ceramic multilayer substrate according to the embodiment, and FIG. 16 is a cross-sectional view and a plan view showing a resistance element built in the ceramic multilayer substrate of FIG. In addition,
The same components as those of the ceramic multilayer substrate shown in FIGS. 1 to 7 are denoted by the same reference numerals, and description thereof is omitted. In the first embodiment, the green sheets G1, G3 are provided for each of the four blocks B1, B2, B3, B4.
G3, G4; G5; G6, G7,..., G9, after the step of firing, the resistance elements R1, R2 and the capacitor C
In contrast to the formation of C1 and C2, the present embodiment forms the resistance element and the capacitor before the firing step of the green sheet for each block, and trims the resistance element and the capacitor after the firing step of the green sheet. The feature is that a process is provided.

As shown in FIG. 15, the ceramic multilayer substrate according to this embodiment has four blocks B11 and B11.
12, B13 and B14, and passive elements such as resistance elements R11 and R12 and a capacitor C11,
Built-in C12. The four blocks B11, B12, B13, and B14 are sequentially stacked, and are mechanically and electrically joined by an insulating joint material 11 and a conductive joint material 12 interposed between the blocks.

Here, the four blocks B11, B12, B13, B1 constituting the ceramic multilayer substrate of FIG.
4, blocks B11 and B14 correspond to blocks B1 and B shown in FIGS. 2 and 5 in the first embodiment.
Exactly the same as 4. The blocks B12 and B13 are almost the same as the blocks B2 and B3 shown in FIGS. 3 and 4 in the first embodiment, except that the resistance elements R11 and R12 and the capacitors C11 and
C12 is different from the resistance elements R1, R2 and the capacitors C1, C2 formed in the blocks B2, B3.
Therefore, in the following description, these resistance elements R1
1, R12 and capacitors C11 and C12 in the first embodiment.
1. Differences from C2 will be described.

As shown in FIGS. 15 and 16A and 16B, on the uppermost insulating layer L3 of the block B12, there are formed resistance elements R11 and R12 as passive elements. Resistance elements R11 and R12 are formed by two electrodes 14a and 14b oppositely formed on the insulating layer L3.
And a resistor layer 15 connected to these two electrodes 14a and 14b. Then, as shown in FIG. 16B, a groove-shaped cut 20 is formed in the resistor layer 15 by a trimming process. Also,
Although not shown, the trimming process is similarly performed on the capacitors C1 and C2 as passive elements formed on the insulating layer L5 of the block B3.

Next, a manufacturing process of the ceramic multilayer substrate shown in FIG. 15 will be described with reference to FIGS.
Here, FIG. 17 is a flowchart for explaining the manufacturing process of the ceramic multilayer substrate of FIG.
8 to 20 are process cross-sectional views for explaining a manufacturing process of the ceramic multilayer substrate of FIG.

First, FIGS. 17 and 18 (a), (b),
, (D), each block B11, B12,..., B1 in the same manner as in the first embodiment.
Thickness of 10 μm to 2 made of a different ceramic material for every 4
Nine green sheets G1, G2; G3, G4; G5; G6 each having a size of about 50 μm and a length and width of about 50 to 200 mm.
G7,..., G9 are formed. That is, block B11-2
, G9, two green sheets G3, G4 of the block B12, one green sheet G5 of the block B13, four green sheets G6, G7,..., G9 of the block B14, respectively. A
1N, high-purity alumina, glass ceramic, and zirconia are used.

Subsequently, these nine green sheets G
In G1,..., G9, a plurality of through-holes having a hole diameter of, for example, about 50 to 200 mm are formed. Then, for example, Cu, Ag, Ag-P
A conductor made of a simple substance or a mixture such as t, Ag-Pd, W, and Mo is buried to form the through hole 13.

Subsequently, on the upper surfaces of the green sheets G1, G2,..., G8 and the upper and lower surfaces of the green sheet G9, for example, the same type of conductor printing as the conductor used to form the through holes 13 is used. Forming wiring conductor layers M1, M2,..., M10 such as receiving lands for through holes, wiring patterns, component lands, and the like.

Next, resistance elements R11 and R12 built in the ceramic multilayer substrate of FIG. 15 are formed. That is, FIG. 17 and FIGS. 19 (a), (b),.
As shown in (d), two electrodes 14a and 14b made of Cu, Ag, Ag-Pt, etc. are formed on the green sheet G3 of the block B12 by printing, plating, sputtering, or the like. I do. Subsequently, a resistor made of, for example, RuO ₂ , LaB ₆ , SnO _2, or the like, which is connected to the two electrodes 14 a, 14 b, is applied by, for example, a printing method.
Thus, the resistance element R11,
Form R12.

Further, capacitors C11 and C12 built in the ceramic multilayer substrate of FIG. 15 are formed. That is, on the green sheet G5 of the block B13, for example, by printing or the like, Cu, Ag, Ag-Pt, Ag-
A lower electrode 16 made of Pd or the like is formed. Subsequently, after the lower electrode 16 is subjected to a drying process, for example, W, Ru, Pt,
A barrier metal layer 17 made of Au, Pd, Ti or the like and having a single-layer or multiple-layer structure is formed to cover the lower electrode 16. Subsequently, tantalum oxide, BaTiO ₃ , SrTi is formed on the barrier metal layer 17 by using a method such as printing, spin coating, sputtering, or CVD.
A dielectric layer 18 made of O ₃ , BaSrTiO ₃ or the like is formed. Further, a barrier metal layer 17 is formed on the dielectric layer 18.
Then, a barrier metal layer and an upper electrode 19 are formed in the same manner as in the case of the lower electrode 16. Thus, the capacitors C11 and C12 are formed on the green sheet G5.

Subsequently, each block B11, B12, B1
Green sheets G1, G2; G3, G4; G6,
After G7,..., G9 are aligned and stacked one after another, a laminating press is performed for each of the blocks B11, B12, and B14 so that air or the like does not remain between the green sheets. Note that since the block B13 is formed of a single-layer green sheet G5, this laminating press step is unnecessary.

Subsequently, each of the blocks B11, B12,.
Multi-layer or single-layer green sheets G1, G for each B14
2; G3, G4; G5; G6, G7,..., G9 are cut into desired sizes. Then, the green sheets G1, G2; G3, G4; G5;
The binder present in the green sheet is removed while heating G7,.

Next, FIG. 17 and FIG.
As shown in (b),..., (D), each block B1
1, B12,..., B14 are fired, and each green sheet G1, G2; G3, G4; G5; G6, G7,.
G9 is an insulating layer L1, L2; L3, L4; L5; L6, L
7, ..., L9. At this time, each block B11, B
Green sheets G1, G2; G for each of 12,..., B14
G5, G6, G7,..., G9 are different from each other, so that the firing temperatures are also different. For example, in the case of AlN or high-purity alumina, the temperature is 1000 to 1300 ° C.,
In the case of glass ceramic, it is around 900 ° C.

Thus, a block B11 in which the two insulating layers L1 and L2 are stacked is formed, and the two insulating layers L3 and L2 are formed.
4 are laminated, and a resistance element R11,
A block B12 on which R12 is formed is formed, a block B13 on which capacitors C11 and C12 are formed on one insulating layer L5, and four insulating layers L6, L7,.
The block B14 in which L9 is laminated is formed.

Next, trimming is performed on the resistance elements R11 and R12 formed on the insulating layer L3 of the block B12 and the capacitors C11 and C12 formed on the insulating layer L5 of the block B13. That is, using a laser or sand blast, etc., a groove-like cut is made in the width direction of the resistor layer 15 of the resistor elements R11 and R12.
A groove-shaped cut 20 as shown in FIG. Thus, the resistance values of the resistance elements R11 and R12 are set within a range of a predetermined target value. According to the current trimming process, it is possible to obtain an accuracy of a resistance value of about 0.5% to 5%. Similarly, capacitors C11 and C12
For the capacitor C1.
1. The capacitance value of C12 is set within a range of a predetermined target value.

Next, blocks B11, B12,..., B
Make a mechanical and electrical connection between the fourteen. That is, the first
12 to 14 of the embodiment, the lowermost insulating layer L2 of the block B11 and the block B
An opening for exposing the end of the through-hole 13 is provided on the lower surface of each of the lowermost insulating layer L4 of 12 and the insulating layer L5 of the block B13 by, for example, a method such as printing. An insulating paste made of a low-temperature melting glass such as spin-on glass made of the following is applied to form the insulating bonding material 11.

Subsequently, similarly, the insulating layer L2, the insulating layer L
4 and the opening of the insulating bonding material 11 on the lower surface of the insulating layer L5, for example, Cu, Ag, Ag-Pt, Ag-P
A conductive paste obtained by kneading a simple substance or a mixture of d, W, Mo or the like using a solvent such as alcohol is applied, and the conductive bonding material 12 is connected to the exposed end of the through hole 13 to form the conductive paste. Here, the conductive bonding material 12 is formed after the insulating bonding material 11 is formed, but the order of forming the insulating bonding material 11 and the conductive bonding material 12 may be reversed.

Subsequently, each block B11, B12,.
B14 are aligned at predetermined positions and laminated, and the insulating bonding material 11
And a temperature at which the conductive bonding material 12 melts, for example, 400 ° C.
To about 500 ° C. Thus, the blocks B11, B12, B13, and B14 are mechanically and electrically bonded by the insulating bonding material 11 and the conductive bonding material 12 interposed between the blocks. Also, pressurize at the same time,
The mechanical and electrical joining of the blocks B11, B12,..., B14 is made uniform and strong. Note that the heating temperature at this time, that is, the melting temperature of the insulating bonding material 11 and the conductive bonding material 12 is determined by the blocks B11, B12,.
4 when forming (the ceramic material of the green sheet is AlN or high-purity alumina or the like).
1300 ° C., and about 900 ° C. in the case of glass ceramic).
12 and the characteristics of the capacitors C11 and C12 are not affected. Thus, the ceramic multilayer substrate shown in FIG. 15 is manufactured.

As described above, according to the present embodiment, the green sheet G3 on which the resistance elements R11 and R12 are formed and the green sheet G5 on which the capacitors C11 and C12 are formed.
Green sheets G1, G2; G3, G4; G5;
G6, G7,..., G9 are represented by blocks B11, B12, B
Each green sheet G is laminated and pressed and fired every 14
1, G2; G3, G4; G5; G6, G7,..., G9 are formed by insulating layers L1, L2; L3, L4; L5; L6, L7,
, L9, and a step of trimming the resistance elements R11 and R12 and the capacitors C11 and C12 is provided.
Even if the characteristics of R1, R12 and capacitors C11, C12 fluctuate, resistor elements R11, R12 and capacitors C11, C1 are trimmed as in the case of forming a passive element on the uppermost layer of a conventional ceramic multilayer substrate.
2 can be within the range of the predetermined target value, so that the resistance elements R11 and R
12 and the capacitors C11 and C12 can be formed in a ceramic multilayer substrate.

The green sheets G3 and G on which the resistance elements R11 and R12 and the capacitors C11 and C12 are formed.
Green sheets G1, G2 containing G5; G3, G4; G
5; G6, G7,..., G9 are baked to form insulating layers L1, L
L3, L4; L5; L6, L7,..., L9, a block B1 in which insulating layers L1 and L2 are laminated, and an insulating layer L
After forming a block B2 on which the insulating layers L4 and L4 are stacked, a block B3 including the insulating layer L5, and a block B4 on which the insulating layers L6, L7,..., L9 are stacked, the blocks B1, B2,. Since the work can be performed simultaneously and in parallel every time, the manufacturing period can be shortened as compared with the conventional case.

Further, AlN is used as the material of the insulating layers L1 and L2 of the block B1, and the insulating layers L3 and L3 of the block B2 are used.
Block B3 using high-purity alumina as the material of L4
By using glass ceramic as the material of the insulating layer L5, and using zirconia as the material of the insulating layers L6, L7,..., L9 of the block B4.
By using a different ceramic material for each of B2,..., B4, it is possible to select the circuit characteristics, heat radiation characteristics, dielectric constant, firing temperature, etc. to be formed for each of the blocks B1, B2,. As described above, the material of each of the insulating layers laminated in the ceramic multilayer substrate is not limited to the same or similar material, but the width of the material is widened, so that the circuit characteristics of the ceramic multilayer substrate can be improved, and the ceramic multilayer substrate can be reduced in size and weight. It can greatly contribute to progress.

Each block B1, B2, B3, B4
Insulating bonding material 11 and conductive bonding material 12 interposed therebetween
By using an insulating paste and a conductive paste as the above, mechanical and electrical joining between the blocks B1, B2, B3, B4 can be easily and satisfactorily secured, and the blocks B1, B2 ,..., B4 are stacked, the built-in resistance elements R11 and R12 and the capacitors C1 and C2 are absorbed into the insulating bonding material 11 and the conductive bonding material 12 while maintaining their shapes.
11, R12 and the mechanical pressure applied to the capacitors C1 and C2 can be reduced to prevent the reliability thereof from deteriorating.

In the second embodiment, the insulating layers L1, L2,.
L2, L3, L4; L5; L6, L7,..., L9 are made of different ceramic materials such as AlN, high-purity alumina, glass ceramic, and zirconia. Of course, the same ceramic material may be used. Alternatively, another ceramic material such as silicon nitride may be used.

It is not necessary to limit the material of the insulating layer to a ceramic material. For example, a metal flat plate made of iron, aluminum, stainless steel, or the like is insulated by enamel processing or the like, or an organic material or glass. A rigid insulating flat plate made of an inorganic material such as a material or a mica material may be used as the insulating layer. Then, it is also possible to use such an insulating flat plate as the insulating layer L5 and form the capacitors C11 and C12 on the insulating layer L5. In this case, since the capacitors C11 and C12 are formed on the rigid insulating layer L5, a high-precision and high-capacity capacitor can be realized without performing the trimming process as in the case of the first embodiment. can do.

Further, the insulating bonding material 11 and the conductive bonding material 12 are used as insulating layers L under the blocks B1, B2 and B3.
2, L4, L5 Instead of forming on the lower surface, block B
2, B3 and B4 may be formed on the upper surfaces of the insulating layers L3, L5 and L6. Further, the insulating layers L2, L4, L5
It may be formed on both the lower surface and the upper surfaces of the insulating layers L3, L5, L6.

(Third Embodiment) FIG. 21 shows a third embodiment of the present invention.
It is a schematic sectional drawing which shows the ceramic multilayer substrate which concerns on embodiment. The same components as those of the ceramic multilayer substrate shown in FIGS. 1 to 7 are denoted by the same reference numerals, and description thereof is omitted. In the first embodiment, as the insulating bonding material 11 for mechanically bonding the four blocks B1, B2, B3, and B4, a low-temperature molten glass such as a spin-on glass made of, for example, alkoxide silane / alcohol. The present embodiment is characterized in that an insulating flat plate is used as an insulating joining material for mechanically joining the blocks, whereas an insulating paste made of

As shown in FIG. 21, the ceramic multilayer substrate according to the present embodiment has four blocks B1 and B
2, B3 and B4, and incorporates resistance elements R1 and R2 as passive elements and capacitors C1 and C2. Then, these four blocks B1, B2, B
Reference numerals 3 and B4 are sequentially stacked, and are mechanically and electrically joined by an insulating joint material 21 and a conductive joint material 22 interposed between the blocks. Here, the insulating bonding material 21 is, for example, a material obtained by melting a low-melting glass plate-shaped insulating flat plate, and the conductive bonding material 22 is, as in the case of the first embodiment, It is obtained by melting a conductive paste.

Next, a manufacturing process of the ceramic multilayer substrate shown in FIG. 21 will be described with reference to FIGS.
Here, FIG. 22 is a flowchart for explaining the manufacturing process of the ceramic multilayer substrate of FIG.
3 to 26 are a process sectional view and a process perspective view, respectively, for explaining the manufacturing process of the ceramic multilayer substrate of FIG. The same components as those of the ceramic multilayer substrate shown in FIGS. 9 to 14 are denoted by the same reference numerals, and description thereof is omitted.

Each of the blocks B1, B2,..., B is similar to the process shown in FIGS. 9 to 11 of the first embodiment.
Nine green sheets G1, G2; G3, G4; G5; G6, G made of ceramic materials different from each other, that is, AlN, high-purity alumina, glass ceramic, and zirconia.
After forming G9,..., G9, for example, Cu, Ag, Ag-Pt, Ag-Pd, and the like are formed in the plurality of through-holes opened in these nine green sheets G1, G2,.
Embedding a conductor made of a simple substance or a mixture of W, Mo, etc.,
A through hole 13 is formed.

Subsequently, on the upper surfaces of the green sheets G1, G2,..., G8 and the upper and lower surfaces of the green sheet G9, for example, the same type of conductor printing as the conductor used to form the through holes 13 is used. Forming wiring conductor layers M1, M2,..., M10 such as receiving lands for through holes, wiring patterns, component lands, and the like.

Subsequently, green sheets G1, G2; G3, G4; G6, G7,
, G9 are aligned and stacked one after another, and a laminating press is performed for each of the blocks B1, B2, B4, and then firing is performed at a different firing temperature for each of the blocks B1, B2,. Sheets G1, G2; G
G5, G6, G7,..., G9 are formed as insulating layers L1,
L2; L3, L4; L5; L6, L7,..., L9.

Subsequently, the resistance elements R1, R2 and the capacitors C1, C2 built in the ceramic multilayer substrate of FIG.
2 is formed. That is, the resistance elements R1 and R2 are formed on the uppermost insulating layer L3 of the block B2, and the capacitors C1 and C2 are formed on the insulating layer L5 of the block B3.

Thus, FIGS. 23 (a), (b),.
As shown in (d), a block B1 in which two insulating layers L1 and L2 are stacked, and two insulating layers L3 and L4 are stacked and resistance elements R1 and R2 are provided on the insulating layer L3.
Are formed, and a block B3 including a single insulating layer L5 and capacitors C1 and C2 formed on the insulating layer L5, and four insulating layers L6, L7,
, And a block B4 in which L9 is laminated.

Although not shown here, each block B1, B2,..., B4 has four blocks B1, B2,.
2,..., A positioning hole through which a pin for positioning when stacking B4 is formed.

Then, mechanical and electrical connections are made between the blocks B1, B2,..., B4. 22 and FIG.
As shown in FIG. 4, an insulating bonding material 21 made of, for example, an insulating flat plate made of low-melting glass in a plate shape is prepared, and a hole diameter of 50 mm is provided at a predetermined position of the insulating bonding material 21.
After drilling a plurality of holes of about 200 mm, for example, Cu, Ag, Ag-Pt, Ag-Pd, W, Mo
A conductive paste obtained by kneading a simple substance or a mixture thereof using a solvent such as alcohol is filled to form a conductive bonding material 22 having a through-hole shape.

At this time, the position of the through-hole-shaped conductive bonding material 22 made of the conductive paste is formed in the through-hole 13 formed in the insulating layer L2 of the block B1 and the insulating layer L3 of the block B2. When the two blocks B1 and B2 are stacked, the conductive bonding material 22 corresponds to the position of the through hole 13 in the insulating layer L2.
3 and the wiring conductor layer M3 of the insulating layer L3. At this time, the thickness of the through-hole-shaped conductive bonding material 22 made of the conductive paste is made larger than the thickness of the insulating bonding material 21. This is similar to the case where the thickness of the conductive bonding material 12 is larger than the thickness of the insulating bonding material 11 in FIG. 13C of the first embodiment, and the two blocks B1 and B2 are stacked. This is to ensure good electrical connection between the through hole 13 of the insulating layer L2 and the wiring conductor layer M3 of the insulating layer L3 with the conductive bonding material 12 interposed therebetween.

The insulating bonding material 21 made of an insulating flat plate is larger than the insulating layers L1, L2,..., L9, and has four blocks B1, B2,.
A positioning hole 23 through which a pin for positioning when inserting and stacking is inserted is formed. In addition, finally, the size of the insulating bonding material 21 is changed to each of the blocks B1 and B1.
A cutting notch 24 is formed for shaping according to the size of 2,..., B4.

Then, as shown in FIG. 24, the insulating bonding material 21 having the through-hole-shaped conductive bonding material 22 formed at a predetermined position is inserted between the block B1 and the block B2. insert. Although not shown, similarly, such insulating bonding materials 21 are inserted between the blocks B2 and B3 and between the blocks B3 and B4, respectively. At this time, it is desirable to solidify in advance a through-hole-shaped conductive bonding material 22 made of a conductive paste thicker than the insulating bonding material 21. In this case, the insulating bonding material 2
, B4 are inserted between the blocks B1, B2,..., B4, and the solidified conductive bonding material 22 serves as a support between the blocks B1, B2,.
Resistance element R formed on insulating layer L3 of block B2
1, R2 and the mechanical pressure on the capacitors C1 and C2 formed on the insulating layer L5 of the block B3 are reduced to prevent the resistance elements R1 and R2 and the capacitors C1 and C2 from being damaged.

Next, as shown in FIG. 25, the pins 25 are passed through the blocks B1, B2,..., B4 and the positioning holes 23 formed in the insulating bonding material 21, and the like. ,..., B4 and the blocks B1, B2,..., B4 and the insulating bonding material 21 inserted therebetween are accurately performed.

Subsequently, a predetermined pressure is applied to block B
1, insulating bonding material 21, block B2, insulating bonding material 2
1. After sequentially laminating the block B3, the insulating bonding material 21, and the block B4, the insulating bonding material 21 made of an insulating flat plate made of low-melting glass and the conductive bonding material 22 made of a conductive paste are heated. Melts and makes the conductive bonding material 22 conductive. Thus, each block B1, B
2, B3 and B4 are mechanically and electrically bonded by an insulating bonding material 21 and a conductive bonding material 22. Simultaneously, pressure is applied to make the mechanical and electrical connection between the blocks B1, B2,..., B4 uniform and strong. Thus, the ceramic multilayer substrate shown in FIG. 21 is manufactured.

As described above, according to the present embodiment, similar to the case of the first embodiment, each of the blocks B1, B2,
, Green sheets G1, G2 of different ceramic materials for each B4; G3, G4; G5; G6, G7, ..., G9
Are fired to form insulating layers L1, L2; L3, L4; L5; L
, L9,..., L9, the resistance elements R1, R2 and the capacitors C1, C2 are respectively formed on the rigid insulating layers L3, L5 of the blocks B2, B3.
Almost the same effects as in the case of the first embodiment can be obtained.

Further, according to the present embodiment, an insulating flat plate made of, for example, low melting glass is used as the insulating bonding material 21, and the conductive bonding material 22 is filled in a through hole of the insulating bonding material 21. By using the through-hole-shaped conductive paste, the thickness of the insulating bonding material 21 can be set to a desired value and the distance between the adjacent blocks B1, B2,..., B4 can be easily adjusted. Each block B
1, B2,..., B4 can be separated from each other by a certain distance to reduce the influence of each other.

Further, as in the first and second embodiments, a heat treatment for drying and solidifying after application, which is required when using the insulating bonding material 11 made of an insulating paste, is required. And each block B1, B2,..., B
While it is necessary to sufficiently apply heat and pressure in order to uniformly fill the space between the blocks 4, the blocks B1, B2,.
Since a sufficient amount of the insulating bonding material 21 is substantially uniform from the beginning, the heat treatment for such uniformization becomes unnecessary or reduced, so that the resistance elements R1, R2
And reduce the heat history received by the capacitors C1 and C2,
Its reliability and the like can be improved.

In the third embodiment, as a means for mechanically and electrically joining the blocks B1, B2, B3, and B4, a through-hole conductive material made of conductive paste is provided at a predetermined position. Insulating bonding material 21 made of an insulating flat plate on which insulating bonding material 22 is formed, and in addition, insulating bonding material made of an insulating paste similar to that of the first embodiment. 11 and a conductive bonding material 12 made of a conductive paste may be used in combination.

This modification will be described with reference to FIG.
Here, FIG. 26 is a process cross section for describing a modification of the process of manufacturing the ceramic multilayer substrate according to the third embodiment. For example, FIG.
As shown in (a), (b),..., (D), on the insulating layers L3, L5 of the blocks B2, B3, the resistance elements R1,
After forming R2 and capacitors C1, C2, insulating layers L2, L4, L5, which are the lower layers of blocks B1, B2, B3,
An insulating paste and a conductive paste are applied to predetermined locations on the lower surface by, for example, printing or the like to form an insulating bonding material 11 and a conductive bonding material 12.

Subsequently, as shown in FIG. 26, the insulating bonding material 21 having the through-hole-shaped conductive bonding material 22 formed at a predetermined position is divided into blocks B1 and B2.
Insert between Although illustration is omitted, similarly, between the block B2 and the block B3 and the block B
Such an insulating bonding material 21 is also inserted between the block 3 and the block B4. Then, after the block B1, the insulating bonding material 21, the block B2, the insulating bonding material 21, the block B3, the insulating bonding material 21, and the block B4 are sequentially stacked, the insulating bonding material 11, the conductive bonding material 12, and the insulation are stacked. Is heated until the conductive bonding material 21 and the conductive bonding material 22 are melted, and the blocks B1, B2, B3, and B4 are mechanically and electrically connected between the blocks B1, B2, B3, and B4 by the insulating bonding materials 11, 21 and the conductive bonding materials 12, 22. To join.

Also in this case, instead of forming the insulating bonding material 11 and the conductive bonding material 12 on the lower surfaces of the insulating layers L2, L4, L5 which are the lower layers of the blocks B1, B2, B3, the blocks B2, B3, B4 are not used. Insulating layer L on top of
3, L5, L6, or may be formed on the upper surface of the insulating layer L2,
It may be formed on both the lower surfaces of L4 and L5 and the upper surfaces of the insulating layers L3, L5 and L6.

The insulating bonding material 1 is provided on both the lower surfaces of the insulating layers L2, L4, L5 and the upper surfaces of the insulating layers L3, L5, L6.
1 and the conductive bonding material 12, when performing the heat treatment for ensuring the mechanical and electrical bonding between the blocks B1, B2, B3, B4, the insulating bonding material 1
1 and the conductive bonding material 12 and the insulating bonding material 21 and the conductive bonding material 22 may be heated until they are melted, but the insulating bonding material 11 made of an insulating paste and the conductive bonding material made of a conductive paste Heating may be performed under the condition that only 1222 is melted and the insulating bonding material 21 made of an insulating flat plate is not melted.

(Fourth Embodiment) FIG. 27 shows a fourth embodiment of the present invention.
It is a schematic sectional drawing which shows the ceramic multilayer substrate which concerns on embodiment. The same components as those of the ceramic multilayer substrate shown in FIG. 21 are denoted by the same reference numerals, and description thereof is omitted. In the third embodiment,
For example, as the insulating bonding material 21 for mechanically bonding the four blocks B1, B2, B3, and B4, an insulating flat plate made of a low-melting glass in a plate shape is used. Although an insulating bonding material made of a similar insulating flat plate is used, the insulating bonding material 21 is characterized in that a recess for accommodating a passive element is provided.

As shown in FIG. 27, the ceramic multilayer substrate according to the present embodiment comprises four blocks B1, B
2, B3 and B4, and incorporates resistance elements R1 and R2 as passive elements and capacitors C1 and C2. Further, these four blocks B1, B2, B
Reference numerals 3 and B4 are sequentially stacked, and are mechanically and electrically joined by an insulating joint material 31 and a conductive joint material 32 interposed between the blocks. And block B1
Concave portions 33a and 33b are formed in the insulating bonding material 31 interposed between the block B2 and the block B2, and the insulating bonding material 31 interposed between the block B2 and the block B3. The resistive elements R1, R2 and the blocks B2 and B3 built in between
And capacitors C1 and C2 built therein.

Next, a manufacturing process of the ceramic multilayer substrate shown in FIG. 27 will be described with reference to FIGS.
Here, FIG. 28 is a flowchart for explaining the manufacturing process of the ceramic multilayer substrate of FIG.
9 and 30 are process cross-sectional views for explaining a manufacturing process of the ceramic multilayer substrate of FIG. 27, respectively. Note that the same components as those of the ceramic multilayer substrate shown in FIGS. 23 to 25 are denoted by the same reference numerals, and description thereof will be omitted.

Each of the blocks B1, B2,..., B is similar to the steps shown in FIGS. 9 to 11 of the first embodiment.
Nine green sheets G1, G2; G3, G4; G5; G6, G made of ceramic materials different from each other, that is, AlN, high-purity alumina, glass ceramic, and zirconia.
After forming G9,..., G9, for example, Cu, Ag, Ag-Pt, Ag-Pd, and the like are formed in the plurality of through-holes opened in these nine green sheets G1, G2,.
Embedding a conductor made of a simple substance or a mixture of W, Mo, etc.,
A through hole 13 is formed.

Subsequently, on the upper surfaces of the green sheets G1, G2,..., G8 and the upper and lower surfaces of the green sheet G9, for example, the same type of conductor printing as the conductor used to form the through holes 13 is used. Forming wiring conductor layers M1, M2,..., M10 such as receiving lands for through holes, wiring patterns, component lands, and the like.

Subsequently, green sheets G1, G2; G3, G4; G6, G7, green sheets G1, G2;
, G9 are aligned and stacked one after another, and a laminating press is performed for each of the blocks B1, B2, B4, and then firing is performed at a different firing temperature for each of the blocks B1, B2,. Sheets G1, G2; G
G5, G6, G7,..., G9 are formed as insulating layers L1,
L2; L3, L4; L5; L6, L7,..., L9.

Subsequently, the resistance elements R1, R2 and the capacitors C1, C2 built in the ceramic multilayer substrate of FIG.
2 is formed. That is, the resistance elements R1 and R2 are formed on the uppermost insulating layer L3 of the block B2, and the capacitors C1 and C2 are formed on the insulating layer L5 of the block B3. 29 (a), (b),..., (D)
As shown in FIG. 7, a block B1 in which two insulating layers L1 and L2 are stacked, two insulating layers L3 and L4 are stacked, and resistance elements R1 and R2 are formed on the insulating layer L3. A block B3 including a block B2, a single insulating layer L5 and capacitors C1 and C2 formed on the insulating layer L5, and four insulating layers L6, L7,.
Are formed, respectively, and the block B4 in which

Next, mechanical and electrical connections are made between the blocks B1, B2,..., B4. That is, FIG. 28 and FIG.
As shown in FIG. 0, in the same manner as in the third embodiment, for example, at a predetermined position of an insulating bonding material 31a formed of an insulating flat plate made of a low-melting glass plate,
For example, Cu, Ag, Ag-Pt, Ag-Pd, W, Mo
A through hole-shaped conductive bonding material 32a made of a conductive paste obtained by kneading a simple substance or a mixture thereof using a solvent such as alcohol is formed. In addition, a positioning hole 23 and a cutting notch 24 are also formed in the insulating bonding material 31a made of the insulating flat plate. The resistance elements R1 and R2 formed on the insulating layer L3 of the block B2 and the capacitor C1 formed on the insulating layer L5 of the block B3 are provided at predetermined positions on the lower surface of the insulating bonding material 31a.
Concave portions 33a and 33b each having a size large enough to accommodate C2 are formed.

Further, as shown in FIG.
In the same manner as in the embodiment, an opening for exposing the end of the through hole 13 is provided on the lower surface of the lowermost insulating layer L2 of the block B1, and the insulating paste having the same material as the insulating bonding material 31a is provided. The insulating bonding material 31b made of is formed. Subsequently, the conductive bonding material 32 made of a conductive paste having the same material as the conductive bonding material 32a is formed in the opening of the insulating bonding material 31b on the lower surface of the insulating layer L2.
b is connected to the exposed end of the through hole 13.

Similarly, an opening for exposing the end of the through-hole 13 and an opening for exposing the resistive elements R1 and R2 are provided on the upper surface of the insulating layer L3 on the uppermost layer of the block B2. Then, an insulating bonding material 31c made of an insulating paste having the same material as above is formed. continue,
Similarly, a conductive bonding material 32c made of a conductive paste having the same material as the conductive bonding material 32a is inserted into the through hole 13 in an opening exposing an end of the through hole 13 of the insulating bonding material 31c on the upper surface of the insulating layer L3. Is formed so as to be connected to the exposed end. For this reason, the resistance elements R1 and R2 on the insulating layer L3 remain exposed.

Although not shown, the lower surface of the lowermost insulating layer L4 of the block B2, the block B3
The upper and lower surfaces of the insulating layer L5 and the upper surface of the uppermost insulating layer L6 of the block B4 are also provided with an insulating bonding material and a conductive bonding material 32a made of an insulating paste having the same material as the insulating bonding material 31a. Are formed respectively with conductive pastes made of the same conductive paste.

Here, the same material is used for the insulating bonding material 31a made of an insulating flat plate and the insulating bonding materials 31b and 31c made of an insulating paste, and the conductive bonding material 32a made of a conductive paste is used. The reason why the same material is used as the material of 32b and 32c is to obtain good joining characteristics when mechanically and electrically joining blocks adjacent to each other.

Then, as shown in FIG. 30, the resistance elements R1, R2 are formed together with the through-hole-shaped conductive bonding material 32a.
Insulating bonding material 31a in which concave portions 33a each having a size large enough to accommodate the two are formed at predetermined positions.
Is inserted between the block B1 and the block B2. Although not shown, similarly, between the block B2 and the block B3, a recess 33b having a size large enough to accommodate the capacitors C1 and C2 together with the through-hole-shaped conductive bonding material 32a. Insert the insulating bonding material 31a formed at a predetermined position. Further, between the block B3 and the block B4, an insulating bonding material 31a in which a through-hole-shaped conductive bonding material 32a is formed at a predetermined position is inserted. In this case, the passive bonding material to be protected is inserted. Since there is no element, an insulating bonding material 31a having no concave portion is used.

Next, in the same manner as in the step shown in FIG. 25 of the third embodiment, each block B1, B2,.
B4 and positioning hole 2 formed in insulating bonding material 31a
3 and the like, the pins 25 are passed through, and the blocks B1, B2,
..., alignment between B4 and these blocks B1, B
2,..., B4 and the insulating bonding material 31a inserted therebetween are precisely positioned. Thereafter, a predetermined pressure is applied to stack the block B1, the insulating bonding material 31a, the block B2, the insulating bonding material 31a, the block B3, the insulating bonding material 31a, and the block B4. At this time, the resistance elements R1 and R2 formed on the insulating layer L3 of the block B2 and the capacitors C1 and C2 formed on the insulating layer L5 of the block B3 are formed on the adjacent insulating bonding material 31a. In the recesses 33a and 33b.

Subsequently, an insulating bonding material 31b made of an insulating paste and a conductive bonding material 3 made of a conductive paste are used.
Heat to a temperature at which 2a and 32b melt. However, at this temperature, the insulating bonding material 31a formed of an insulating flat plate is not melted. Thus, each block B1, B
2, B3, and B4 are interposed between the blocks, and the insulating bonding materials 31a and 31b (hereinafter, both are collectively referred to as "insulating bonding material 31") and the conductive bonding materials 32a and 32
b (hereinafter referred to as "conductive bonding material 32"
Mechanically and electrically). Also,
At the same time, pressure is applied to make the mechanical and electrical connection between the blocks B1, B2,..., B4 uniform and strong.
At this time, since the insulating bonding material 31a does not melt, the concave portion 33a formed in the insulating bonding material 31a,
Reference numeral 33b denotes a state in which the resistance elements R1, R2 and the capacitors C1, C2 are housed without being deformed. Thus, the ceramic multilayer substrate shown in FIG. 27 is manufactured.

As described above, according to the present embodiment, each block B1, B2,
, Green sheets G1, G2 of different ceramic materials for each B4; G3, G4; G5; G6, G7, ..., G9
Are fired to form insulating layers L1, L2; L3, L4; L5; L
, L9,..., L9, the resistive elements R1, R2 and the capacitors C1, C2 are formed on the rigid insulating layers L3, L5 of the blocks B2, B3.
Almost the same effects as in the embodiment can be obtained.

Each block B1, B2, B3, B4
As an insulating bonding material 31 and a conductive bonding material 32 that mechanically and electrically bond between them, an insulating flat plate in which a through-hole-shaped conductive bonding material 32a made of a conductive paste is formed at a predetermined position. Insulating bonding material 31a and insulating layers L2, L4, which form lower layers of blocks B1, B2, B3.
Insulating bonding materials 31b and 31c made of an insulating paste formed on both the lower surface of L5 and the upper surfaces of the insulating layers L3, L5 and L6 forming the upper layers of the blocks B2, B3 and B4, and a conductive bonding material made of a conductive paste In the same manner as in the third embodiment, the thickness of the insulating bonding material 31a is set to a desired value and the adjacent blocks B1, B2,. Since it is possible to easily adjust the distance between each block B
1, B2,..., B4 can be separated from each other by a certain distance to reduce the influence of each other.

Further, according to the present embodiment, the block B1
A concave portion 33a having a size large enough to accommodate the resistance elements R1 and R2 formed on the insulating layer L3 of the block B2 is provided at a predetermined position of the insulating bonding material 31a inserted between the block B2 and the insulating bonding material 31a. Formed, block B2 and block B3
At a predetermined position of the insulating bonding material 31a inserted between
Capacitor C formed on insulating layer L5 of block B3
1, a recess 33 having a size large enough to accommodate C2
b, and each block B1, B2, B3, B
When performing a heat treatment for securing mechanical and electrical bonding between the insulating bonding materials 4, the insulating bonding material 3 made of an insulating paste is used.
1b, 31c and the conductive bonding material 32a, 32b, 32c made of a conductive paste are melted, and the heating is performed under the condition that the insulating bonding material 31a made of an insulating flat plate is not melted. When the insulating bonding material 31a is inserted and laminated between B4, the resistance elements R1 and R2 and the capacitors C1 and C2 are formed in the concave portions 33a and 33b formed in the adjacent insulating bonding material 31a. And the insulating bonding material 31a is not melted by the subsequent heat treatment, so that the concave portions 33a, 33
b is not deformed and the resistance elements R1, R2 and the capacitor C
1, C2 is held in a housed state, so that the resistance element R
1, R2 and the capacitors C1, C2 are completely protected,
The reliability can be prevented from deteriorating.

In the third embodiment, the insulating bonding material 31 and the conductive bonding material 32 for mechanically and electrically bonding the blocks B1, B2, B3, and B4 are provided at predetermined positions. The insulating bonding material 31a made of an insulating flat plate forming the conductive bonding material 32a made of a conductive paste, and the insulating material formed on both surfaces of the lower layers of the blocks B1, B2 and B3 and the upper layers of the blocks B2, B3 and B4. Large enough for accommodating the resistance elements R1, R2, etc. in the insulating bonding material 31a together with the insulating bonding materials 31b, 31c formed of the conductive paste and the conductive bonding materials 32b, 32c formed of the conductive paste. Although the concave portion 33a having the thickness is formed, it is not necessarily limited to this. For example, instead of forming the concave portion 33a and the like, a through hole having a size large enough to accommodate the resistance elements R1 and R2 may be formed.

The formation of the insulating bonding materials 31b and 31c and the conductive bonding materials 32b and 32c may be omitted. This modification will be described with reference to FIG. Here, FIG.
14 is a process cross-sectional view for explaining a modification of the manufacturing process of the ceramic multilayer substrate according to the fourth embodiment.
For example, FIGS. 12A and 12B of the first embodiment,
..., as shown in (d), after forming the resistance elements R1, R2 and the capacitors C1, C2 on the insulating layers L3, L5 of the blocks B2, B3, respectively, and as shown in FIG. Through hole-shaped conductive bonding material 3 at position
Insulating bonding material 31 in which a concave portion 33a having a size large enough to accommodate 2a and resistance elements R1 and R2 is formed.
a is inserted between the block B1 and the block B2.
Although not shown, the capacitor C is also provided between the block B2 and the block B3 and between the block B3 and the block B4 in the same manner as in the fourth embodiment.
1, a recess 33 having a size large enough to accommodate C2
The insulating bonding material 31a in which b is formed and the insulating bonding material 31a in which no recess is formed are inserted respectively.

Then, the block B1, the insulating bonding material 31
a, block B2, insulating bonding material 31a, block B
3. After sequentially laminating the insulating bonding material 31a and the block B4, heating is performed until the insulating bonding material 31a and the conductive bonding material 32a are melted, and the respective blocks B1, B2, B3, and B4 are heated.
The space is mechanically and electrically joined by the insulating joining material 31a and the conductive joining material 32a.

Also in this case, the insulating bonding material 31a
Are formed with recesses 33a and the like having a size large enough to accommodate the resistance elements R1, R2, etc., so that the insulating bonding material 31a is inserted between the blocks B1, B2,..., B4. When stacking, the resistance elements R1, R2, etc.
a, the mechanical pressure applied to the resistance elements R1, R2, etc. when the adjacent blocks are brought into close contact with each other can be reduced. However, each block B1, B2, B
During the heat treatment for ensuring the mechanical and electrical bonding between the layers 3 and B4, the insulating bonding material 31a is melted, and the concave portions 33a and the like are also deformed. Is closer to the ceramic multilayer substrate shown in FIG. 21 of the third embodiment than to the ceramic multilayer substrate shown in FIG. 27 of the fourth embodiment.

[0212]

As described above, according to the multilayer substrate and the method of manufacturing the same of the present invention, the following effects can be obtained. That is, according to the multilayer substrate according to the first aspect, the passive element is formed between the plurality of blocks that are mechanically and electrically joined by the insulating joining material and the conductive joining material. It is possible to eliminate the limitation on the number of passive elements and the restriction on circuit characteristics that occur when a passive element is formed only on the uppermost layer or the lowermost layer of a conventional multilayer substrate or when a passive element is formed on a build-up layer. . In addition, since the multilayer substrate is divided into a plurality of stacked blocks, the material of the insulating layer is selected for each block so that the circuit characteristics, heat radiation characteristics, dielectric constant, and the like are optimized. As a result, the material of each of the insulating layers laminated in the multilayer substrate is not limited to the same or similar material as in the related art, and the width of the material is widened. It can greatly contribute to the progress of improvement, miniaturization, weight reduction, and the like.

Further, according to the multi-layer substrate according to claim 2,
In the multilayer board according to the first aspect, a concave portion or a through hole is provided at a predetermined position of the insulating bonding material, and the passive element is housed in the concave portion or the through hole, so that the stacked and adjacent blocks are stacked. Thus, the passive element can be completely protected from the mechanical pressure of the passive element, and the reliability of the passive element can be prevented from deteriorating.

According to the method of manufacturing a multilayer substrate according to the ninth aspect, a plurality of green sheets are laminated and fired, or one green sheet is fired to convert a plurality of or single insulating layers. After forming a plurality of blocks, a passive element is formed on an insulating layer which is a surface layer of a predetermined block of the plurality of blocks. Since there is no need to consider the firing temperature of the green sheet, shrinkage during firing, and shrinkage errors associated therewith, it is possible to directly set the forming conditions for realizing the desired characteristics, and it is possible to set the passive conditions with less variation in characteristics. The element can be built in a multilayer substrate. At the same time, the range of choices for materials such as electrodes, resistor layers, and dielectric layers that constitute passive elements is expanded,
This can contribute to reduction in manufacturing cost and improvement in performance of passive elements.

Further, since a passive element is formed on the rigid insulating layer after firing, for example, a thin film forming process using a sputtering device, a CVD device or the like is used.
An electrode, a resistor layer, a dielectric layer, and the like constituting the passive element can be formed with high precision, and a high-performance passive element with improved characteristics can be formed. In particular, when the passive element is a capacitor, it is possible to perform a smoothing process (such as a glaze process) on the surface of the insulating layer, and it is also possible to make the dielectric layer thin with high precision and uniformity. Capacitors of a capacity can be realized.

Further, after a plurality of blocks are formed through the firing process of the green sheet, it is possible to work on each block simultaneously and in parallel, thereby shortening the manufacturing period as compared with the conventional case. be able to. In addition, since the passive elements are formed for each block, the heat treatment required for the formation of the passive elements is set to the minimum required temperature and number of times for each block, and the heat history received by the entire ceramic substrate is greatly reduced as compared with the conventional case. Therefore, the deterioration of the ceramic substrate and the passive elements incorporated therein due to the thermal history can be reduced, and the reliability and the like can be improved.

Further, by forming a plurality of green sheets using different materials, it is possible to select the material of the insulating layer for each block so as to optimize the circuit characteristics, heat radiation characteristics, dielectric constant, and the like. Therefore, the material of each of the insulating layers laminated in the multilayer substrate is not limited to the same or similar material as in the related art, and the width of the material is widened. It can greatly contribute to the progress of weight reduction and weight reduction.

According to the method of manufacturing a multilayer substrate according to the tenth aspect, after a passive element is formed on a predetermined green sheet, a plurality of green sheets are formed with the green sheet on which the passive element is formed as the uppermost layer. A step of stacking and firing sheets or firing one green sheet to form a plurality of blocks each including a plurality of layers or a single-layer insulating layer and thereafter performing trimming of passive elements is provided. As a result, even if the characteristics of the passive element fluctuate due to shrinkage or the like during firing of the green sheet, the characteristic of the passive element is determined by trimming as in the case of forming the passive element on the uppermost layer of the conventional multilayer substrate. , It is possible to form a passive element having a small variation in characteristics by being built in the multilayer substrate.

Further, it is not necessary to consider the firing temperature of the green sheet, shrinkage during firing and shrinkage error accompanying the firing, and the choice of materials such as electrodes, resistor layers, and dielectric layers constituting passive elements is reduced. As it expands, it can contribute to reducing manufacturing costs and improving the performance of passive elements,
After a plurality of blocks are formed through the firing process of the green sheet on which the passive elements are formed, it is possible to work on each block simultaneously and in parallel, so that the manufacturing period can be shortened. Furthermore, by forming a plurality of green sheets using different materials, circuit characteristics, heat radiation characteristics,
Since it is possible to select the material of the insulating layer for each block so that the dielectric constant and the like are optimized, the material of each insulating layer laminated on the multilayer substrate is the same or similar as in the related art. The material is not limited to the material, and the width of the material is widened, so that it can greatly contribute to the improvement of the circuit characteristics of the multilayer substrate, progress in miniaturization, weight reduction, and the like.

According to the method of manufacturing a multilayer substrate according to the eleventh aspect, a plurality of green sheets are laminated and fired, or one green sheet is fired to convert a plurality of or a single insulating layer. 10. The method according to claim 9, wherein after forming a plurality of first blocks, a passive element is formed on a first insulating layer which is a surface layer of a predetermined block of the plurality of first blocks. And a second insulating layer which is a rigid insulating flat plate made of an organic material or an inorganic material or an insulating flat plate obtained by insulating the surface of a metal flat plate. By forming the second block, the width of the material of the layer structure of the multilayer substrate is widened, which can contribute to the improvement of the circuit characteristics of the multilayer substrate, the reduction in size and weight, and the like.

According to the method of manufacturing a multi-layer substrate according to the twelfth aspect, after a passive element is formed on a predetermined green sheet, a plurality of green sheets on which the passive element is formed are used as an uppermost layer. After laminating and firing one green sheet, or firing one green sheet to form a plurality of first blocks each including a plurality of layers or a single-layer first insulating layer, trimming of the passive element is performed. By providing the step of performing, the same effect as in the case of the production of the multilayer substrate according to claim 10 can be obtained, and the surface of the metal flat plate is made of an insulating flat plate or an organic material or an inorganic material. By forming the second block composed of the second insulating layer, which is a rigid insulating flat plate, the width of the material of the layer structure of the multilayer substrate is widened, so that the number of times of the multilayer substrate is reduced. Improvement and miniaturization of properties, can contribute to the development of such weight.

According to a method of manufacturing a multilayer substrate according to claim 18, in the method of manufacturing a multilayer substrate according to any one of claims 9 to 12, the insulating bonding material and the conductive bonding material may be used as insulating bonding materials. After using a paste and a conductive paste, the insulating paste and the conductive paste are selectively applied to the surface of one of the blocks adjacent to each other and arranged at predetermined positions. By adhering mutually adjacent blocks through the paste, it is possible to easily and accurately apply the insulating paste and the conductive paste by using, for example, a printing method. The manufacturing cost can be reduced. Further, when closely adjoining blocks, the passive element formed on the insulating layer forming the surface layer of the predetermined block is absorbed into the insulating paste and the conductive paste while maintaining its shape, and is applied to the passive element. Since it is possible to reduce the applied mechanical pressure, it is possible to prevent the reliability of the passive element from deteriorating.

According to a method of manufacturing a multilayer substrate according to claim 19, in the method of manufacturing a multilayer substrate according to any one of claims 9 to 12, an insulating flat plate is used as an insulating bonding material, and The conductive paste filled in the through hole at a predetermined position of the insulating flat plate is used as the conductive bonding material, and the conductive paste is filled in blocks adjacent to each other via the insulating flat plate filled in the through hole at the predetermined position. Since the distance between the adjacent blocks can be easily adjusted by using an insulating flat plate having a desired thickness, Can be reduced. In addition, since the heat treatment for drying and solidifying after application, which is required when using the insulating paste as the insulating bonding material, becomes unnecessary or reduced, the heat history received by the passive element is reduced, and Reliability and the like can be improved.

According to the method for manufacturing a multilayer substrate according to claim 20, in the method for manufacturing a multilayer substrate according to any one of claims 9 to 12, the insulating bonding material and the conductive bonding material are each used as an insulating bonding material. While using the paste and the first conductive paste, the insulating paste and the first conductive paste are selectively applied to one or both surfaces of the blocks adjacent to each other and arranged at predetermined positions,
An insulating flat plate is used as the insulating bonding material, and a second conductive paste filled in a through hole at a predetermined position of the insulating flat plate is used as the conductive bonding material, and the insulating paste and the first conductive paste are used. In addition, the blocks adjacent to each other are brought into close contact with each other via the insulating flat plate filled with the second conductive paste in the through hole at a predetermined position, that is, the insulating paste and the insulating flat plate are used together as an insulating bonding material. By doing so, it is possible to reduce the mechanical pressure applied to the passive elements when closely adjoining the blocks, to prevent the deterioration of the reliability of the passive elements, and to adjust the distance between the blocks to be joined. The influence of each other can be reduced.

According to the method of manufacturing a multilayer substrate according to claim 21, in the method of manufacturing a multilayer substrate according to claim 19 or 20, a concave portion or a through hole is formed at a predetermined position on the insulating flat plate. When closely adjoining blocks through this insulating flat plate, when the passive elements formed on the insulating layer forming the surface layer of the block are accommodated in the recesses or the through holes, the adjacent blocks are closely adhered. Thus, the passive element can be almost completely protected from the mechanical pressure, and the reliability of the passive element can be prevented from deteriorating.

According to the method for manufacturing a multilayer substrate according to claim 26, in the method for manufacturing a multilayer substrate according to claim 18, after the adjacent blocks are brought into close contact with each other via the insulating paste and the conductive paste. When heating and pressurizing to a predetermined temperature, at this predetermined temperature, the insulating paste and the conductive paste are melted, and the conductive paste is made conductive, so that the mechanical strength between the blocks adjacent to each other is increased. Good joining and electrical joining can be ensured.

According to a method of manufacturing a multilayer substrate according to claim 27, in the method of manufacturing a multilayer substrate according to claim 19, the conductive flat plate is filled with a conductive paste in a through hole at a predetermined position. After the blocks adjacent to each other are brought into close contact with each other through heating and pressing to a predetermined temperature, at this predetermined temperature, by melting the insulating flat plate and the conductive paste and making the conductive paste conductive, Good mechanical and electrical bonding between adjacent blocks can be ensured. And
At this time, a concave portion or a through hole is formed at a predetermined position of the insulating flat plate, and when a passive element is accommodated in the concave portion or the through hole when closely adjoining blocks via the insulating flat plate, The mechanical pressure applied to the passive element is alleviated by the concave portion or the through hole, so that the reliability of the passive element can be prevented from deteriorating.

According to the method for manufacturing a multilayer substrate according to claim 28, in the method for manufacturing a multilayer substrate according to claim 20, the insulating paste, the first conductive paste, and the second conductive paste are different from each other. After closely adjoining blocks adjacent to each other via an insulating flat plate filled in a through hole at a predetermined position, when heating and pressing to a predetermined temperature,
At this predetermined temperature, the insulating flat plate, the insulating paste, the first conductive paste, and the second conductive paste are melted, and the first conductive paste and the second conductive paste are made conductive. By doing so, it is possible to ensure good mechanical and electrical bonding between adjacent blocks. Then, at this time, a concave portion or a through-hole is formed at a predetermined position of the insulating flat plate, and when a passive element is housed in the concave portion or the through-hole when closely adjoining blocks via the insulating flat plate. Is
The mechanical pressure applied to the passive element is alleviated by the concave portion or the through hole, so that the reliability of the passive element can be prevented from deteriorating.

According to the method of manufacturing a multi-layer substrate according to claim 29, in the method of manufacturing a multi-layer substrate according to claim 20, the coating is selectively applied to the surfaces of both blocks of adjacent blocks. After the insulating paste, the first conductive paste, and the second conductive paste placed at the positions are closely attached to the adjacent blocks via the insulating plate filled in the through holes at the predetermined positions, When heating and pressurizing to a temperature equal to or lower than the predetermined temperature, the predetermined temperature is set lower than the melting temperature of the insulating flat plate, and at this predetermined temperature, the insulating paste, the first conductive paste, and the second conductive paste are used. By melting the conductive paste and making the first conductive paste and the second conductive paste conductive, mechanical bonding and electrical connection between adjacent blocks can be achieved. The case can be satisfactorily ensured. Then, at this time, a concave portion or a through hole is formed at a predetermined position of the insulating flat plate, and when the blocks adjacent to each other are closely attached via the insulating flat plate, a passive element is accommodated in the concave portion or the through hole. Since the insulating flat plate is not melted, the recess or through hole is not formed,
Since the passive element is held in the housed state, the passive element can be completely protected from mechanical pressure when the adjacent blocks are brought into close contact with each other, and deterioration of the reliability of the passive element can be prevented.

According to a method of manufacturing a multilayer substrate according to claim 30, in the method of manufacturing a multilayer substrate according to claim 18, the insulating paste and the conductive paste are formed in one or both of adjacent blocks. When the conductive paste is selectively applied to the surface of the conductive paste and arranged at a predetermined position, the conductive paste is formed to be thicker than the insulating paste, so that the electric connection between the adjacent blocks can be improved. It can be secured well.

According to the method of manufacturing a multi-layer board according to the thirty-first aspect, in the method of manufacturing a multi-layer board according to the nineteenth aspect, the conductive bonding material is filled in the through hole at a predetermined position of the insulating flat plate. When the conductive paste is used, by forming the thickness of the conductive paste to be larger than the thickness of the insulating flat plate, it is possible to better secure the electrical connection between adjacent blocks.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view showing a ceramic multilayer substrate according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view (part 1) showing each block constituting the ceramic multilayer substrate of FIG. 1;

FIG. 3 is a sectional view (part 2) showing each block constituting the ceramic multilayer substrate shown in FIG. 1;

FIG. 4 is a sectional view (part 3) showing each block constituting the ceramic multilayer substrate of FIG. 1;

FIG. 5 is a sectional view (part 4) showing each block constituting the ceramic multilayer substrate of FIG. 1;

FIGS. 6A and 6B are a cross-sectional view and a plan view, respectively, showing a resistive element incorporated in the ceramic multilayer substrate of FIG.

FIG. 7 is a sectional view showing a capacitor built in the ceramic multilayer substrate of FIG. 1;

FIG. 8 is a flowchart for explaining a manufacturing process of the ceramic multilayer substrate of FIG. 1;

9 (a), (b),..., (D) are process cross-sectional views (part 1) for explaining the manufacturing process of the ceramic multilayer substrate of FIG.

10 (a), (b),..., (D) each show FIG.
FIG. 10 is a process cross-sectional view (part 2) for describing the manufacturing process of the ceramic multilayer substrate of FIG.

11 (a), (b),..., (D) each show FIG.
It is process sectional drawing (the 3) for demonstrating the manufacturing process of the ceramic multilayer substrate of FIG.

12 (a), (b),..., (D) each show FIG.
It is process sectional drawing (the 4) for demonstrating the manufacturing process of the ceramic multilayer substrate of FIG.

13 (a) and (b) are FIGS. 12 (a) and 12 (b), respectively.
FIG. 12B is an enlarged cross-sectional view of FIG. 12C, and FIG.
It is an expanded sectional view of a part.

FIGS. 14A and 14B are partially enlarged cross-sectional views of FIGS. 12B and 12C.

FIG. 15 is a schematic sectional view showing a ceramic multilayer substrate according to a second embodiment of the present invention.

16 (a) and (b) are a cross-sectional view and a plan view, respectively, showing a resistive element built in the ceramic multilayer substrate of FIG.

FIG. 17 is a flowchart for explaining a manufacturing process of the ceramic multilayer substrate of FIG. 15;

18 (a), (b),..., (D) each show FIG.
FIG. 14 is a process cross-sectional view (part 1) for describing the manufacturing process of the ceramic multilayer substrate of No. 5;

19 (a), (b),..., (D) each show FIG.
FIG. 14 is a process cross-sectional view (part 2) for describing the manufacturing process of the ceramic multilayer substrate of No. 5;

20 (a), (b),..., (D) each show FIG.
It is process sectional drawing (the 3) for demonstrating the manufacturing process of the ceramic multilayer substrate of No. 5.

FIG. 21 is a schematic sectional view showing a ceramic multilayer substrate according to a third embodiment of the present invention.

FIG. 22 is a flowchart for explaining a manufacturing process of the ceramic multilayer substrate of FIG. 21;

23 (a), (b),..., (D) each show FIG.
FIG. 4 is a process cross-sectional view (No. 1) for describing the manufacturing process of the first ceramic multilayer substrate.

FIG. 24 is a process sectional view (part 2) for describing the manufacturing process of the ceramic multilayer substrate in FIG. 21;

FIG. 25 is a process perspective view (part 3) for describing the manufacturing process of the ceramic multilayer substrate in FIG. 21.

FIG. 26 is a process cross-sectional view for describing a modified example of the manufacturing process of the ceramic multilayer substrate according to the third embodiment of the present invention.

FIG. 27 is a schematic sectional view showing a ceramic multilayer substrate according to a fourth embodiment of the present invention.

FIG. 28 is a flowchart for explaining a manufacturing process of the ceramic multilayer substrate of FIG. 27;

29 (a), (b),..., (D) each show FIG.
FIG. 14 is a process sectional view (part 1) for describing the manufacturing process of the ceramic multilayer substrate of No. 7;

FIG. 30 is a process perspective view (part 2) for describing the manufacturing process of the ceramic multilayer substrate in FIG. 27;

FIG. 31 is a process cross-sectional view for describing a modification of the manufacturing process of the ceramic multilayer substrate according to the fourth embodiment of the present invention.

FIG. 32 is a cross-sectional view showing a conventional ceramic multilayer substrate having a built-in passive element.

FIG. 33 is a flowchart illustrating a manufacturing process of the ceramic multilayer substrate in FIG. 32.

FIG. 34 is a process perspective view for describing the manufacturing process of the ceramic multilayer substrate according to the flowchart of FIG. 33.

FIG. 35 is a schematic sectional view showing a ceramic multilayer substrate in which a conventional resistive element is formed on the uppermost layer.

36 (a) and (b) are a cross-sectional view and a plan view showing the resistance element of FIG. 35, respectively.

FIG. 37 is a schematic sectional view showing a ceramic multilayer substrate provided with a conventional build-up layer.

FIG. 38 is a schematic cross-sectional view showing a conventional ceramic multilayer substrate having a built-in capacitor having a relatively small capacity.

[Explanation of symbols]

B1, B2, ..., B4, B11, B12, ..., B14:
Block, R1, R2, R11, R12, R21, R2
2, R31, R32: resistance element, C1, C2, C11,
C12, C21, C22, C31, C32: capacitor, L1, L2: insulating layer made of AlN, L3, L4:
L5: insulating layer made of glass ceramic, L6, L7, ..., L9: insulating layer made of zirconia, L21, L22, ..., L29, L3
L34: insulating layer, L40: dielectric layer for capacitor, M1, M2, ..., M10, M21, M2
2,..., M30, M31, M32,..., M34: wiring conductor layer, M35a, M35b, M36a, M36b: capacitor electrode, G1, G2: green sheet made of AlN, G3, G4: green made of high-purity alumina , G5: Green sheets made of glass ceramic, G6, G7,..., G9: Green sheets made of zirconia, G21, G22,..., G29: Green sheets, 11: Insulating bonding material, 12, 12a, 12b: Conductive 13, 13a, 13b, 13c: through hole, 14a, 14b: electrode, 15: resistor layer, 16: lower electrode, 17: barrier metal layer, 18: dielectric layer, 1
9: barrier metal layer and upper electrode, 20: groove-shaped cut by trimming, 21: insulating bonding material, 22:
Conductive bonding material, 23: positioning hole, 24: cutting notch, 25: pin, 31: insulating bonding material, 31a: insulating bonding material made of an insulating flat plate, 31b: insulation made of an insulating paste Conductive bonding material, 32: conductive bonding material, 32
a: a conductive bonding material in the form of a through hole made of a conductive paste; 32b: a conductive bonding material made of an insulating paste;
33: recess, 41: ceramic multilayer substrate, 42a, 4
2b: electrode, 43: resistor layer, 44: protective glass layer, 4
5: groove-shaped cut, 51: ceramic multilayer substrate, 5
2: build-up layer, 53: through hole, 54: wiring conductor layer.

────────────────────────────────────────────────── ───

[Procedure amendment]

[Submission date] June 3, 1999 (1999.6.3)

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] 0045

[Correction method] Change

[Correction contents]

Procedure-4 Conductor printing is performed on the upper surface of the four green sheets on which the through holes 13 are formed, and in some cases on the upper surface and the lower surface.
.., M34 , such as receiving lands, wiring patterns, and component lands of the through holes 13, and capacitor electrodes M35a, M35b, 36a, and M36.
b and the like are formed. At this time, as the material of the wiring conductor layer M31 and the like and the capacitor electrode M35a and the like, the same system as the conductor used to form the through hole 13 is used.

[Procedure amendment 2]

[Document name to be amended] Statement

[Correction target item name] 0046

[Correction method] Change

[Correction contents]

Procedure-5: A green sheet having a wiring conductor layer M31 formed on the upper surface, and a wiring conductor layer M32 and a capacitor electrode M formed on the upper and lower surfaces.
Green sheet formed with 35a and 35b, thickness 10μ
a green sheet having a thickness of about m to 100 μm, electrodes M36a and 36b for capacitors and a wiring conductor layer M3 on the upper and lower surfaces.
3 and the green sheet on which the wiring conductor layer M34 is formed on the lower surface are aligned.
A capacitor electrode M35a and a capacitor electrode M3 are sandwiched between green sheets having a thickness of about 10 μm to 100 μm.
6a and the capacitor electrode M35b and the capacitor electrode M36b are sequentially stacked. Then, a lamination press is performed so that air or the like does not remain between the green sheets.

[Procedure amendment 3]

[Document name to be amended] Statement

[Correction target item name] 0053

[Correction method] Change

[Correction contents]

As described above, a ceramic multilayer substrate having a built-in resistive element and capacitor as passive elements,
Due to the time required to find the optimum manufacturing conditions for the resistive element and the capacitor and the precision of the formed resistive element and capacitor, the level has not yet reached a level that can be used in place of the current chip-type components. Further, in the conventional ceramic multilayer substrate incorporating the capacitors C31 and C32 shown in FIG. 38, two sets of capacitor electrodes facing each other with the capacitor dielectric layer L40 interposed therebetween,
That is, the capacitors C31, M36a and the electrodes M35b, M36b for the capacitor C31,
C32 is formed. Now, assuming that the thickness of the capacitor dielectric layer L40 is 50 μm and the relative dielectric constant is 5.7, the capacitance values of the capacitors C31 and C32 are 1 pF
/ Mm ² or less.

[Procedure amendment 4]

[Document name to be amended] Statement

[Correction target item name] 0081

[Correction method] Change

[Correction contents]

In the method for manufacturing a multilayer substrate according to the ninth to twelfth aspects, the material of the plurality of green sheets may be alumina, glass ceramic, aluminum nitride, silicon nitride, zirconium, or a mixture thereof. It is preferred to use. And among these materials, a plurality of green sheets may be formed using the same material. This is advantageous in terms of material procurement and simplification of the manufacturing process. Alternatively, a plurality of green sheets may be formed using different materials, and an insulating layer of a predetermined block of the plurality of blocks may be formed of a material different from an insulating layer of another block. a first insulating layer of a given block may be made of a material different from the first insulating layer of the other blocks of the first block. In this case, for each block, it is possible to select the circuit characteristics to be formed, the heat radiation characteristics, the dielectric constant, the firing temperature, and the like. Compared to what had to be done, the material has a wider range, which greatly contributes to the improvement of the circuit characteristics of the multi-layer substrate and the progress of miniaturization and weight reduction.

[Procedure amendment 5]

[Document name to be amended] Statement

[Correction target item name]

[Correction method] Change

[Correction contents]

Subsequently, these green sheets G1, G
2,..., G8, and the upper and lower surfaces of the green sheet G9, for example, by printing conductors of the same system as the conductor used to form the through-holes 13, such as through-land receiving lands, wiring patterns, and component lands. Conductor layer M1,
, M10 are formed.

[Procedure amendment 6]

[Document name to be amended] Statement

[Correction target item name] 0121

[Correction method] Change

[Correction contents]

Subsequently, tantalum oxide, BaTiO ₃ , SrTi is formed on the barrier metal layer 17 by using a method such as printing, spin coating, sputtering, or CVD.
A dielectric layer 18 made of O ₃ , BaSrTiO ₃ or the like is formed. Further, a barrier metal layer 17 is formed on the dielectric layer 18.
Then, a barrier metal layer and an upper electrode 19 are formed in the same manner as in the case of the lower electrode 16. In addition, for example, the lower electrode 1
In the case where the dielectric layer 6, the dielectric layer 18, and the like are formed by a printing method, a baking process is performed, for example, at about 700 ° C. Thus, as shown in FIG. 11 (c), the block B3
The capacitors C1 and C2 are formed on the insulating layer L5.

[Procedure amendment 7]

[Document name to be amended] Statement

[Correction target item name] 0126

[Correction method] Change

[Correction contents]

[0126] Further, FIG. 1 of the enlarged portion A shown in FIG. 13 (a)
As shown in FIG. 3C, the thickness of the conductive bonding material 12 is made larger than the thickness of the insulating bonding material 11 so that both blocks B
When B1 and B2 are stacked, a good electrical connection between the through hole 13 of the insulating layer L2 and the wiring conductor layer M3 of the insulating layer L3 with the conductive bonding material 12 interposed therebetween is ensured.

[Procedure amendment 8]

[Document name to be amended] Statement

[Correction target item name] 0145

[Correction method] Change

[Correction contents]

As shown in FIGS. 15 and 16A and 16B, on the uppermost insulating layer L3 of the block B12, there are formed resistance elements R11 and R12 as passive elements. Resistance elements R11 and R12 are formed by two electrodes 14a and 14b oppositely formed on the insulating layer L3.
And a resistor layer 15 connected to these two electrodes 14a and 14b. Then, as shown in FIG. 16B, a groove-shaped cut 20 is formed in the resistor layer 15 by a trimming process. Also,
Although not shown, the capacitors C1 and C2 as passive elements formed on the insulating layer L5 of the block B13 are similarly trimmed.

[Procedure amendment 9]

[Document name to be amended] Statement

[Correction target item name] 0148

[Correction method] Change

[Correction contents]

Subsequently, these green sheets G1, G
2,..., G8, and the upper and lower surfaces of the green sheet G9, for example, by printing conductors of the same system as the conductor used to form the through-holes 13, such as through-land receiving lands, wiring patterns, and component lands. Conductor layer M1,
, M10 are formed.

[Procedure amendment 10]

[Document name to be amended] Statement

[Correction target item name] 0150

[Correction method] Change

[Correction contents]

Next, resistance elements R11 and R12 built in the ceramic multilayer substrate of FIG. 15 are formed. Immediately
As shown in FIGS. 17 and 19 (a), (b),..., (D), the green sheet G3 of the block B12 is printed on the green sheet G3 by a method such as printing, plating, or sputtering.
u, Ag, two electrodes 14a, 1
4b are formed facing each other. Subsequently, for example, RuO connected to the two electrodes 14a and 14b by a printing method, for example.
_A resistor made of a ₂ system, LaB ₆ , SnO ₂ system, or the like is applied and dried, and then a resistor layer 15 is formed. Thus, the resistance elements R11 and R12 are formed on the green sheet G3.
To form

[Procedure amendment 11]

[Document name to be amended] Statement

[Correction target item name] 0189

[Correction method] Change

[Correction contents]

The insulating bonding material 1 is provided on both the lower surfaces of the insulating layers L2, L4, L5 and the upper surfaces of the insulating layers L3, L5, L6.
1 and the conductive bonding material 12, when performing the heat treatment for ensuring the mechanical and electrical bonding between the blocks B1, B2, B3, B4, the insulating bonding material 1
1 and the conductive bonding material 12 and the insulating bonding material 21 and the conductive bonding material 22 may be heated until they are melted, but the insulating bonding material 11 made of an insulating paste and the conductive bonding material made of a conductive paste Heating may be performed under the condition that only 12 melts and the insulating bonding material 21 made of an insulating flat plate does not melt.

[Procedure amendment 12]

[Document name to be amended] Statement

[Correction target item name] 0229

[Correction method] Change

[Correction contents]

According to the method of manufacturing a multi-layer substrate according to claim 29, in the method of manufacturing a multi-layer substrate according to claim 20, the coating is selectively applied to the surfaces of both blocks of adjacent blocks. After the insulating paste, the first conductive paste, and the second conductive paste placed at the positions are closely attached to the adjacent blocks via the insulating plate filled in the through holes at the predetermined positions, When heating and pressurizing to a temperature equal to or lower than the predetermined temperature, the predetermined temperature is set lower than the melting temperature of the insulating flat plate, and at this predetermined temperature, the insulating paste, the first conductive paste, and the second conductive paste are used. By melting the conductive paste and making the first conductive paste and the second conductive paste conductive, mechanical bonding and electrical connection between adjacent blocks can be achieved. The case can be satisfactorily ensured. Then, at this time, a concave portion or a through hole is formed at a predetermined position of the insulating flat plate, and when the blocks adjacent to each other are closely attached via the insulating flat plate, a passive element is accommodated in the concave portion or the through hole. Since the insulating flat plate is not melted, the recess or through hole is not deformed ,
Since the passive element is held in the housed state, the passive element can be completely protected from mechanical pressure when the adjacent blocks are brought into close contact with each other, and deterioration of the reliability of the passive element can be prevented.

[Procedure amendment 13]

[Document name to be amended] Statement

[Correction target item name] FIG.

[Correction method] Change

[Correction contents]

13 (a) and (b) are FIGS. 12 (a) and 12 (b), respectively.
(B) is an enlarged sectional view of the (c) Fig. 13 (a) A
It is an expanded sectional view of a part.

[Procedure amendment 14]

[Document name to be amended] Drawing

[Correction target item name] FIG.

[Correction method] Change

[Correction contents]

FIG.

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁷ Identification FI FI Theme Court ゛ (Reference) H01L 23/15 H01L 23/12 N 23/14 C (72) Inventor Noburo Motohashi 6 Kita Shinagawa, Shinagawa-ku, Tokyo 7-35 Chome Sony Corporation F term (reference) 5E346 AA12 AA13 AA14 AA15 AA16 AA38 AA43 AA60 BB02 BB04 BB07 BB20 CC09 CC10 CC16 CC17 CC18 CC19 CC31 CC32 CC35 CC36 CC38 CC39 CC41 CC42 DD01 DD07 DD24 DD29 EE43 FF18 FF28 FF35 FF36 FF41 FF45 GG06 GG09 GG10 GG28 HH01 HH22 HH23 HH33

Claims (31)

[Claims] 1. A multi-layer substrate having a built-in passive element, wherein the multi-layer substrate is divided into a plurality of stacked blocks, and the plurality of blocks have a single layer in which a through hole and a wiring conductor are formed. Or a plurality of insulating layers, wherein the passive element is formed on the insulating layer which is a surface layer of a predetermined block of the plurality of blocks, and blocks adjacent to each other of the plurality of blocks are insulated. A multilayer substrate, which is mechanically joined by a conductive joining material and electrically joined by a conductive joining material. 2. The multilayer substrate according to claim 1, wherein a concave portion or a through hole is provided at a predetermined position of the insulating bonding material, and the passive element is housed in the concave portion or the through hole. A multilayer substrate characterized by the above-mentioned. 3. The green sheet according to claim 1, wherein the insulating layers of the plurality of blocks are made of alumina, glass ceramic, aluminum nitride, silicon nitride, zirconium, or a mixture thereof. A multilayer substrate characterized by being formed by firing. 4. The multilayer substrate according to claim 3, wherein said insulating layers of said plurality of blocks are made of the same material. 5. The multilayer substrate according to claim 3, wherein the insulating layer of a predetermined block of the plurality of blocks is made of a different material from the insulating layers of the other blocks. . 6. The multi-layer substrate according to claim 1, wherein the insulating layer of a predetermined block of the plurality of blocks is made of an insulating flat plate obtained by insulating the surface of a metal flat plate, or an organic material or an inorganic material. A multilayer board characterized by being a rigid insulating flat plate. 7. The multilayer board according to claim 1, wherein the insulating bonding material is a low-melting glass, polyimide, epoxy resin, alumina, glass ceramic, or the like.
Aluminum nitride, silicon nitride, or zirconium,
Or a multilayer substrate characterized by using a mixture thereof. 8. The multilayer substrate according to claim 1, wherein the conductive bonding material is copper, silver, an alloy of silver and platinum,
A method for manufacturing a multilayer substrate, wherein an alloy of silver and palladium, molybdenum, tungsten, or a mixture thereof is used. 9. A method for manufacturing a multi-layer substrate in which a passive element is built, comprising: forming a plurality of green sheets; and forming a through hole and a wiring conductor in each of the plurality of green sheets. Of the plurality of green sheets, a predetermined plurality of green sheets are laminated and fired, or one green sheet is fired to form a plurality of blocks including a plurality of layers or a single insulating layer. Performing a passive element on the insulating layer that is a surface layer of a predetermined block of the plurality of blocks; and an insulating bonding material and conductive bonding between the blocks of the plurality of blocks. A step of mechanically and electrically joining adjacent blocks by the insulating bonding material and the conductive bonding material with a material interposed therebetween. Production method. 10. A method for manufacturing a multi-layer substrate in which a passive element is built, comprising: forming a plurality of green sheets; and forming a through hole and a wiring conductor in each of the plurality of green sheets. Forming a passive element on a predetermined green sheet among the plurality of green sheets; laminating and firing a plurality of green sheets with the predetermined green sheet on which the passive element is formed being the uppermost layer; Or a step of firing one green sheet to form a plurality of blocks composed of a plurality of layers or a single layer of an insulating layer; a step of performing trimming of the passive element; and a step of trimming the plurality of blocks. An insulating bonding material and a conductive bonding material are interposed between the blocks, and the blocks adjacent to each other are mechanically and electrically connected by the insulating bonding material and the conductive bonding material. Method for manufacturing a multilayer substrate, characterized in that and a step of joined. 11. A method of manufacturing a multi-layer substrate with a built-in passive element, comprising: forming a plurality of green sheets; and forming a through hole and a wiring conductor in each of the plurality of green sheets. Among the plurality of green sheets, a predetermined plurality of green sheets are stacked and fired, or one green sheet is fired to form a plurality of or a plurality of single-layer first insulating layers. Forming a first block; forming a passive element on the first insulating layer forming a surface layer of a predetermined block of the plurality of first blocks; insulating a surface of the metal flat plate A second insulating plate which is a treated insulating plate or a rigid insulating plate made of an organic or inorganic material;
Forming a through hole and a wiring conductor in the insulating layer to form a second block; and an insulating bonding material and a conductive bonding between each of the plurality of first blocks and the second block. A step of mechanically and electrically joining adjacent blocks with the insulating bonding material and the conductive bonding material with a material interposed therebetween. 12. A method of manufacturing a multi-layer substrate in which a passive element is built, comprising: forming a plurality of green sheets; and forming a through hole and a wiring conductor in each of the plurality of green sheets. Forming a passive element on a predetermined green sheet of the plurality of green sheets; and laminating and firing a plurality of green sheets with the predetermined green sheet on which the passive element is formed as an uppermost layer. Or a step of baking one green sheet to form a plurality of first blocks composed of a plurality of layers or a single layer of a first insulating layer; a step of trimming the passive element; A second insulating plate made of an organic material or an inorganic material or a rigid insulating plate made of an organic material or an inorganic material.
Forming a through hole and a wiring conductor in the insulating layer to form a second block; and an insulating bonding material and a conductive bonding between each of the plurality of first blocks and the second block. A step of mechanically and electrically joining adjacent blocks with the insulating bonding material and the conductive bonding material with a material interposed therebetween. 13. The method of manufacturing a multilayer substrate according to claim 11, further comprising a step of forming a passive element on the second insulating layer that forms a surface layer of the second block. Substrate manufacturing method. 14. The method for manufacturing a multilayer substrate according to claim 9, wherein alumina is used as a material of the plurality of green sheets.
A method for producing a multilayer substrate, comprising using glass ceramic, aluminum nitride, silicon nitride, zirconium, or a mixture thereof. 15. The method for manufacturing a multilayer substrate according to claim 9, wherein the plurality of green sheets are formed using the same material. 16. The method for manufacturing a multilayer substrate according to claim 9, wherein the plurality of green sheets are formed using different materials, and wherein the insulating layer of a predetermined block among the plurality of blocks is formed. And a method of manufacturing a multi-layer substrate, which is made of a material different from that of the insulating layer of another block. 17. The method for manufacturing a multilayer substrate according to claim 11, wherein the plurality of green sheets are formed using different materials, and the plurality of green sheets are formed of a predetermined block of the plurality of first blocks. A method for manufacturing a multilayer substrate, wherein the first insulating layer is made of a different material from the first insulating layer before the other blocks. 18. The method for manufacturing a multilayer substrate according to claim 9, wherein said insulating bonding material and said conductive bonding material mechanically and electrically connect adjacent blocks to each other. An insulating paste and a conductive paste are used as the insulating bonding material and the conductive bonding material, respectively, and the insulating paste and the conductive paste are selected as one or both of opposing block surfaces of the adjacent blocks. A multi-layer substrate, which is heated and pressed to a predetermined temperature after closely adhering the adjacent blocks via the insulating paste and the conductive paste, and applying pressure to the blocks. Manufacturing method. 19. The method for manufacturing a multilayer substrate according to claim 9, wherein said insulating bonding material and said conductive bonding material are used to mechanically and electrically connect adjacent blocks to each other. An insulating flat plate is used as the insulating bonding material, and a conductive paste filled in a through hole at a predetermined position of the insulating flat plate is used as the conductive bonding material. A method of manufacturing a multilayer substrate, comprising: adhering the adjacent blocks through the insulating flat plate filled in a through-hole, and then heating and pressing to a predetermined temperature. 20. The method for manufacturing a multilayer substrate according to claim 9, wherein when the blocks adjacent to each other are mechanically and electrically bonded by the insulating bonding material and the conductive bonding material. An insulating paste and a first conductive paste are used as the insulating bonding material and the conductive bonding material, respectively, and the insulating paste and the first conductive paste are applied to opposing block surfaces of the adjacent blocks. While selectively applying to one or both of them and disposing them at a predetermined position, an insulating flat plate is used as the insulating bonding material, and the conductive bonding material is inserted into a through hole at a predetermined position of the insulating flat plate. Using the filled second conductive paste, the insulating paste, the first conductive paste, and the second conductive paste are used.
After closely adhering the adjacent blocks through the insulating flat plate filled with the conductive paste of the conductive paste in a predetermined position, the multi-layer substrate is characterized by being heated and pressed to a predetermined temperature. Production method. 21. The method for manufacturing a multilayer substrate according to claim 19, further comprising a step of forming a concave portion or a through hole at a predetermined position of the insulating flat plate, and adjacent to each other via the insulating flat plate. When the blocks to be adhered to each other, the passive element formed on the insulating layer forming the surface layer of the adjacent blocks is housed in the recess or the through hole formed in the insulating flat plate. Of manufacturing a multi-layer substrate. 22. The method for manufacturing a multilayer substrate according to claim 18, wherein the insulating paste is a low-melting glass, polyimide, epoxy resin, alumina, glass ceramic, or the like.
Aluminum nitride, silicon nitride, or zirconium,
Or, a mixture of these is kneaded in a paste with a predetermined solvent, and used as the conductive paste, copper, silver, an alloy of silver and platinum, an alloy of silver and palladium, molybdenum, or tungsten, or A method for producing a multilayer substrate, comprising using a paste obtained by kneading a conductive material containing a mixture of the above as a main component with a predetermined solvent. 23. The method for manufacturing a multilayer substrate according to claim 19, wherein a low-melting glass is used as the insulating flat plate, and copper, silver, an alloy of silver and platinum, silver and palladium are used as the conductive paste. A method for producing a multilayer substrate, comprising: using a conductive material having an alloy, molybdenum, or tungsten, or a mixture thereof as a main component in a paste form with a predetermined solvent. 24. The method for manufacturing a multilayer substrate according to claim 20, wherein the insulating paste is a low-melting glass, polyimide, epoxy resin, alumina, glass ceramic, or the like.
Aluminum nitride, silicon nitride, or zirconium,
Alternatively, a mixture of these is kneaded in a paste with a predetermined solvent, and a low-melting glass is used as the insulating flat plate. Copper, as the first conductive paste and the second conductive paste, Silver, an alloy of silver and platinum, an alloy of silver and palladium, molybdenum or tungsten, or a conductive material mainly containing a mixture thereof is kneaded into a paste with a predetermined solvent. Manufacturing method of a multilayer substrate. 25. The method according to claim 24, wherein the insulating paste and the insulating flat plate are made of the same material, and wherein the first conductive paste and the second conductive paste are made of the same material. Are made of the same material. 26. The method for manufacturing a multilayer substrate according to claim 18, wherein said insulating paste is selectively applied to one or both of opposing block surfaces of said adjacent blocks and arranged at a predetermined position. After the blocks adjacent to each other are brought into close contact with each other via the conductive paste, and then heated and pressed to a predetermined temperature, at the predetermined temperature, the insulating paste and the conductive paste are melted and the conductive paste is melted. A method for producing a multilayer substrate, wherein a conductive paste is made conductive. 27. The method for manufacturing a multilayer substrate according to claim 19, wherein said conductive paste is applied to said adjacent blocks through said insulating flat plate filled in through holes at predetermined positions, and then said predetermined paste is applied thereto. A method of manufacturing the multilayer substrate, wherein when heating and pressurizing to a temperature of, the insulating plate and the conductive paste are melted and the conductive paste is made conductive at the predetermined temperature. 28. The method for manufacturing a multilayer substrate according to claim 20, wherein said insulating paste is selectively applied to one or both of opposing block surfaces of said adjacent blocks and arranged at a predetermined position. The first conductive paste and the second conductive paste are brought into close contact with adjacent blocks via the insulating flat plate filled in through holes at predetermined positions, and then heated to a predetermined temperature and heated. When pressing, at the predetermined temperature, the insulating flat plate, the insulating paste, the first conductive paste, and the second conductive paste are melted, and the first conductive paste and the second conductive paste are melted. A method for manufacturing a multi-layer substrate, wherein the second conductive paste is made conductive. 29. The method for manufacturing a multilayer substrate according to claim 20, wherein said insulating paste and said insulating paste are selectively applied to both opposing block surfaces of said adjacent blocks and arranged at predetermined positions. The first conductive paste and the second conductive paste are brought into close contact with adjacent blocks via the insulating flat plate filled in through holes at predetermined positions, and then heated to a predetermined temperature and heated. When pressing, the predetermined temperature is set to be lower than the melting temperature of the insulating flat plate, and at the predetermined temperature, the insulating paste, the first conductive paste, and the second conductive paste A method for manufacturing a multilayer substrate, wherein the first conductive paste and the second conductive paste are made conductive while melting. 30. The method for manufacturing a multilayer substrate according to claim 18, wherein the insulating paste and the conductive paste are selectively applied to one or both of opposing block surfaces of adjacent blocks to a predetermined position. Wherein the conductive paste is formed to be thicker than the insulating paste. 31. The method for manufacturing a multilayer substrate according to claim 19, wherein a conductive paste filled in a through hole at a predetermined position of the insulating flat plate is used as the conductive bonding material. A thickness of the insulating substrate is larger than a thickness of the insulating flat plate.