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JP2000081638A - Liquid crystal display device and manufacturing method thereof - Google Patents

Liquid crystal display device and manufacturing method thereof

Info

Publication number
JP2000081638A
JP2000081638A JP25019898A JP25019898A JP2000081638A JP 2000081638 A JP2000081638 A JP 2000081638A JP 25019898 A JP25019898 A JP 25019898A JP 25019898 A JP25019898 A JP 25019898A JP 2000081638 A JP2000081638 A JP 2000081638A
Authority
JP
Japan
Prior art keywords
signal supply
liquid crystal
video signal
scanning signal
supply wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25019898A
Other languages
Japanese (ja)
Inventor
Hiroaki Yonekura
広顕 米倉
Shinichiro Ishihara
伸一郎 石原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP25019898A priority Critical patent/JP2000081638A/en
Priority to KR1020017002769A priority patent/KR20010079729A/en
Priority to CN99810547A priority patent/CN1317106A/en
Priority to PCT/JP1999/004606 priority patent/WO2000014600A1/en
Priority to TW088115207A priority patent/TW536647B/en
Publication of JP2000081638A publication Critical patent/JP2000081638A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/133345Insulating layers
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136227Through-hole connection of the pixel electrode to the active element through an insulation layer
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • B32B2457/20Displays, e.g. liquid crystal displays, plasma displays
    • B32B2457/202LCD, i.e. liquid crystal displays

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)

Abstract

(57)【要約】 【課題】 フォトリソ工程のサイクル数を低減し、プロ
セスリードタイムを短縮することができ、TFTアレー
の全製造プロセスにおけるコストを削減することができ
る液晶表示装置およびその製造方法を提供する。 【解決手段】 走査信号供給配線2および映像信号供給
配線5を実装配線するために第2絶縁膜6を開口除去す
るためのパタン形成、走査信号供給配線2の層と映像信
号供給配線5の層とを層変換するために第1絶縁膜3を
開口除去するためのパタン形成を同時に1回で行い、T
FTアレープロセスにおけるフォトリソ工程のサイクル
数を5回にするとともに、画素電極7の層を利用して走
査信号供給配線2の層と映像信号供給配線5の層との間
を電気的に接続する。
(57) Abstract: A liquid crystal display device and a method of manufacturing the same capable of reducing the number of cycles in a photolithography process, shortening the process lead time, and reducing the cost in the entire manufacturing process of a TFT array. provide. SOLUTION: A pattern for removing an opening in a second insulating film 6 for mounting and wiring the scanning signal supply wiring 2 and the video signal supply wiring 5, a layer of the scanning signal supply wiring 2 and a layer of the video signal supply wiring 5 are provided. And a pattern for removing the opening of the first insulating film 3 is simultaneously formed once in order to convert the layers into layers.
The number of photolithography steps in the FT array process is set to five, and the layer of the scanning signal supply wiring 2 and the layer of the video signal supply wiring 5 are electrically connected using the layer of the pixel electrode 7.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、スイッチング素子
により液晶を駆動して画像表示するアクティブマトリク
ス方式の液晶表示装置およびその製造方法に関するもの
である。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an active matrix type liquid crystal display device for displaying an image by driving a liquid crystal by a switching element, and a method of manufacturing the same.

【0002】[0002]

【従来の技術】近年では、画像表示のために液晶を利用
した表示装置が、薄型および軽量でかつ低電力という従
来のCRTなどを利用したディスプレイにない特徴を有
していることから、広く使用されており、中でもマトリ
クス状に配列された画素毎に薄膜トランジスタ(以下、
TFTと略す)からなるスイッチング素子をもち、その
スイッチング素子により液晶を駆動して画像表示するア
クティブマトリクス方式の液晶表示装置は、クロストー
クの少ない鮮明な画像表示が得られることから、ノート
パソコンやカーナビゲーション装置のディスプレイ等に
使用され、近年、急速に利用されるようになってきた。
2. Description of the Related Art In recent years, display devices using liquid crystal for displaying images have been widely used because they are thin, light and have low power, which are not available in displays using conventional CRTs. In particular, a thin film transistor (hereinafter, referred to as a thin film transistor) is provided for each pixel arranged in a matrix.
An active matrix type liquid crystal display device having a switching element composed of a TFT (which is abbreviated as TFT) and driving the liquid crystal by the switching element to display an image can provide a clear image display with little crosstalk, so that it can be used in a notebook computer or a car. It is used for a display of a navigation device and the like, and has recently been rapidly used.

【0003】以下、従来のアクティブマトリクス方式の
液晶表示装置の一例について、図面を用いて説明する。
図2は従来のアクティブマトリクス方式の液晶表示装置
のTFTを有するアレー部分の断面図である。図2にお
いて、2は、TFTアレー部分における絶縁性透明基板
であるガラス基板1上にマトリクス状に配列されたTF
Tのゲート電極を兼ね、そのTFTのゲート電極に走査
信号を供給する走査信号供給配線、3は、走査信号供給
配線2上に積層した第1の絶縁体層を成す第1絶縁膜
で、TFTのゲート電極に対するゲート絶縁膜、4はT
FTの第1絶縁膜(ゲート絶縁膜)3の上に形成された
TFTのチャンネル領域を形成するアモルファスシリコ
ン半導体膜、7は複数個がマトリクス状に配列された画
素電極であり、この画素電極7に対応してTFTも複数
個がマトリクス状に配列されている。5は、TFTのア
モルファスシリコン半導体膜4に接続したソース電極を
兼ね、ドレイン電極11を介して画素電極7に映像信号
を供給する映像信号供給配線である。6は、TFTの保
護膜として作用するパッシベーション絶縁膜であり、第
2の絶縁体層を成す第2絶縁膜である。
Hereinafter, an example of a conventional active matrix type liquid crystal display device will be described with reference to the drawings.
FIG. 2 is a sectional view of an array portion having a TFT of a conventional active matrix type liquid crystal display device. In FIG. 2, reference numeral 2 denotes TFs arranged in a matrix on a glass substrate 1 which is an insulating transparent substrate in a TFT array portion.
A scanning signal supply line 3 which also serves as a gate electrode of T and supplies a scanning signal to the gate electrode of the TFT, 3 is a first insulating film forming a first insulator layer laminated on the scanning signal supply line 2, and Gate insulating film for the gate electrode of
An amorphous silicon semiconductor film for forming a TFT channel region formed on a first insulating film (gate insulating film) 3 of FT, and a plurality of pixel electrodes 7 are arranged in a matrix. In response to this, a plurality of TFTs are arranged in a matrix. Reference numeral 5 denotes a video signal supply line which also serves as a source electrode connected to the amorphous silicon semiconductor film 4 of the TFT and supplies a video signal to the pixel electrode 7 via the drain electrode 11. Reference numeral 6 denotes a passivation insulating film that functions as a protective film of the TFT, and is a second insulating film that forms a second insulator layer.

【0004】以上のように構成された液晶表示装置につ
いて、その動作を以下に説明する。まず、走査信号供給
配線2に電圧が印加され、アモルファスシリコン半導体
膜4にTFTのチャンネルが形成されると、映像信号供
給配線5からの映像信号が、TFTのチャンネルを通過
してドレイン電極11に流れ込み、さらに画素電極7に
伝わり、その画素電極7と平行に対向するカラーフィル
タ(図示せず)部分に設けられた対向電極(図示せず)
との間の電界により、画素電極7と対向電極との間に注
入され挟持された液晶の配向を任意に可変し、光透過率
を調整することによって、所望の画像を作り出し、液晶
表示装置の画面に画像表示する。
[0004] The operation of the liquid crystal display device configured as described above will be described below. First, when a voltage is applied to the scanning signal supply wiring 2 and a TFT channel is formed in the amorphous silicon semiconductor film 4, a video signal from the video signal supply wiring 5 passes through the TFT channel to the drain electrode 11. The counter electrode (not shown) provided in a color filter (not shown) portion which flows into the pixel electrode 7 and is opposed to the pixel electrode 7 in parallel.
A desired image is created by arbitrarily changing the orientation of the liquid crystal injected and sandwiched between the pixel electrode 7 and the counter electrode and adjusting the light transmittance by the electric field between the pixel electrode 7 and the counter electrode. Display an image on the screen.

【0005】このような液晶表示装置において、一般
に、ガラス基板1上にTFTを形成するためのアレープ
ロセス工程は、薄膜形成後、フォトリソ工程により、レ
ジストパタンを形成し、不要な薄膜部分をエッチング除
去した後にレジストパタンを除去するという作業を、サ
イクル的に繰り返す長く複雑な工程である。このフォト
リソ工程のサイクル数を低減して全製造工程のリードタ
イムを短縮することが、製品に対するコスト及び不良率
の低減につながる。
In such a liquid crystal display device, generally, in an array process step for forming a TFT on the glass substrate 1, after forming a thin film, a resist pattern is formed by a photolithography step, and an unnecessary thin film portion is removed by etching. This is a long and complicated process in which the operation of removing the resist pattern after the process is repeated in a cyclic manner. Reducing the number of cycles in the photolithography process to shorten the lead time in all the manufacturing processes leads to a reduction in cost and defective rate for products.

【0006】上記のような液晶表示装置の製造工程で
は、一般的に、フォトリソ工程としては、走査信号供給
配線2、映像信号供給配線5及びドレイン電極11、ア
モルファスシリコン半導体膜4を形成するためのパタン
形成、画素電極7を形成するためのパタン形成、走査信
号供給配線2および映像信号供給配線5を実装配線する
ためにパッシベーション絶縁膜6を開口除去するための
パタン形成、さらに走査信号供給配線2の層と映像信号
供給配線5の層とを層変換するために第1絶縁膜(ゲー
ト絶縁膜)3を開口除去するためのパタン形成の計6回
繰り返されることになる。
In the manufacturing process of the liquid crystal display device as described above, generally, as a photolithography process, a scanning signal supply wiring 2, a video signal supply wiring 5, a drain electrode 11, and an amorphous silicon semiconductor film 4 are formed. Pattern formation, pattern formation for forming the pixel electrode 7, pattern formation for removing the opening of the passivation insulating film 6 for mounting and wiring the scanning signal supply wiring 2 and the video signal supply wiring 5, and further, the scanning signal supply wiring 2 The pattern formation for removing the opening of the first insulating film (gate insulating film) 3 in order to convert the layer of the first signal and the layer of the video signal supply wiring 5 is repeated a total of six times.

【0007】[0007]

【発明が解決しようとする課題】しかしながら上記のよ
うな従来の液晶表示装置を製造するための製造方法で
は、上述のように、フォトリソ工程のサイクル数として
6回必要であり、その工程が、全体の工程リードタイム
を非常に長くするため、全製造プロセスにおけるコスト
を引き上げる要因となるという問題点を有していた。
However, in the above-described conventional method for manufacturing a liquid crystal display device, as described above, the number of photolithography process cycles is six, and the number of photolithography processes is six. Has a problem in that the process lead time becomes very long, which causes a rise in cost in the entire manufacturing process.

【0008】本発明は、上記従来の問題点を解決するも
ので、TFTアレープロセスにおけるフォトリソ工程の
サイクル数を低減し、その工程を含む全体のプロセスリ
ードタイムを短縮することができ、TFTアレーの全製
造プロセスにおけるコストを削減することができる液晶
表示装置およびその製造方法を提供する。
The present invention solves the above-mentioned conventional problems. The present invention can reduce the number of photolithography process cycles in the TFT array process, shorten the overall process lead time including that process, and improve the TFT array process. Provided are a liquid crystal display device and a method for manufacturing the liquid crystal display device, which can reduce costs in all manufacturing processes.

【0009】[0009]

【課題を解決するための手段】上記の課題を解決するた
めに本発明の液晶表示装置およびその製造方法は、走査
信号供給配線および映像信号供給配線を実装配線するた
めに第2の絶縁体層を開口除去するためのパタン形成、
走査信号供給配線の層と映像信号供給配線の層とを層変
換するために第1の絶縁体層を開口除去するためのパタ
ン形成を同時に1回で行い、TFTアレープロセスにお
けるフォトリソ工程のサイクル数を5回にするととも
に、画素電極の層を利用して走査信号供給配線層と映像
信号供給配線層との間を電気的に接続することを特徴と
する。
In order to solve the above-mentioned problems, a liquid crystal display device and a method of manufacturing the same according to the present invention include a second insulator layer for mounting and wiring scanning signal supply wiring and video signal supply wiring. Pattern formation for removing openings,
In order to convert the layer of the scanning signal supply wiring and the layer of the video signal supply wiring, the pattern formation for removing the opening of the first insulator layer is simultaneously performed once, and the number of photolithography process cycles in the TFT array process is performed. Is repeated five times, and the scanning signal supply wiring layer and the video signal supply wiring layer are electrically connected using the pixel electrode layer.

【0010】以上により、TFTアレープロセスにおけ
るフォトリソ工程のサイクル数を低減し、その工程を含
む全体のプロセスリードタイムを短縮することができ、
TFTアレーの全製造プロセスにおけるコストを削減す
ることができる。
As described above, the number of cycles of the photolithography process in the TFT array process can be reduced, and the overall process lead time including that process can be shortened.
The cost in the whole manufacturing process of the TFT array can be reduced.

【0011】[0011]

【発明の実施の形態】本発明の請求項1に記載の液晶表
示装置は、液晶を用いて画面上に画像表示する表示装置
であって、対向する絶縁性透明基板間に前記液晶を挟持
し、その液晶を表示画像に対応する走査信号および映像
信号により駆動して、前記画面上に画像表示する液晶表
示装置において、前記画像表示のための複数の画素が前
記絶縁性透明基板上にマトリクス状に配列されたアレー
部分の構成要素として、少なくとも、前記画素毎に対応
してマトリクス状に配列された複数の画素電極と、前記
画素電極毎に対応して配列された薄膜トランジスタから
なる複数のスイッチング素子と、前記複数のスイッチン
グ素子の各ゲート電極に前記走査信号を供給する複数の
走査信号供給配線と、前記複数のスイッチング素子の各
ソース電極およびドレイン電極を介して前記画素電極に
前記映像信号を供給する複数の映像信号供給配線と、前
記複数の走査信号供給配線上に積層して前記複数のスイ
ッチング素子のゲート電極に対する絶縁膜となる第1の
絶縁体層と、前記複数の映像信号供給配線上に積層して
前記複数のスイッチング素子に対する保護膜となる第2
の絶縁体層とを備え、前記画素電極を、その一部が、映
像信号供給配線と第2の絶縁体層に形成されたコンタク
トホールパタンを介して電気的に導通し、かつ走査信号
供給配線と第1および第2の絶縁体層に形成されたコン
タクトホールパタンを介して電気的に導通するよう形成
し、前記走査信号および映像信号による前記スイッチン
グ素子のオンオフにより、前記画素電極を通じて前記液
晶を駆動し画像表示する構成とする。
DESCRIPTION OF THE PREFERRED EMBODIMENTS A liquid crystal display device according to a first aspect of the present invention is a display device for displaying an image on a screen using liquid crystal, wherein the liquid crystal is sandwiched between opposing insulating transparent substrates. In a liquid crystal display device that drives the liquid crystal by a scanning signal and a video signal corresponding to a display image to display an image on the screen, a plurality of pixels for displaying the image are arranged in a matrix on the insulating transparent substrate. As constituent elements of the array portion arranged in at least, at least a plurality of pixel electrodes arranged in a matrix corresponding to the pixels, and a plurality of switching elements formed of thin film transistors arranged corresponding to the pixel electrodes A plurality of scanning signal supply lines for supplying the scanning signal to each gate electrode of the plurality of switching elements; and a plurality of source electrodes of the plurality of switching elements and A plurality of video signal supply wirings for supplying the video signal to the pixel electrode via a rain electrode, and a first film which is stacked on the plurality of scanning signal supply wirings and serves as an insulating film for a gate electrode of the plurality of switching elements. A second insulating layer, which is laminated on the plurality of video signal supply wirings and serves as a protective film for the plurality of switching elements.
A part of the pixel electrode is electrically connected to a video signal supply line via a contact hole pattern formed in the second insulator layer, and a scan signal supply line is provided. Is formed so as to be electrically conductive through contact hole patterns formed in the first and second insulator layers, and the liquid crystal is passed through the pixel electrode by turning on and off the switching element by the scanning signal and the video signal. It is configured to drive and display an image.

【0012】請求項2に記載の液晶表示装置は、請求項
1記載の第1の絶縁体層が、半導体層を含む積層構造で
ある構成とする。請求項3に記載の液晶表示装置は、請
求項1または請求項2記載の第2の絶縁体層が、アクリ
ル樹脂、ポリイミド、ポリアミド、ポリカーボネート等
の透明樹脂か、これらを含む積層構造である構成とす
る。
A liquid crystal display device according to a second aspect is configured such that the first insulator layer according to the first aspect has a laminated structure including a semiconductor layer. According to a third aspect of the present invention, in the liquid crystal display device, the second insulating layer according to the first or second aspect is a transparent resin such as an acrylic resin, a polyimide, a polyamide, or a polycarbonate, or has a laminated structure including these. And

【0013】請求項4に記載の液晶表示装置の製造方法
は、液晶を用いて画面上に画像表示する表示装置であっ
て、対向する絶縁性透明基板間に前記液晶を挟持し、そ
の液晶を表示画像に対応する走査信号および映像信号に
より複数のスイッチング素子をオンオフして画素電極を
通じて駆動し、前記画面上に画像表示する液晶表示装置
の製造方法において、前記画像表示のための複数の画素
が前記絶縁性透明基板上にマトリクス状に配列されたア
レー部分の前記複数のスイッチング素子を含む構成要素
の形成工程として、少なくとも、前記複数のスイッチン
グ素子の各ゲート電極に走査信号を供給する複数の走査
信号供給配線および前記各ゲート電極となるゲートダミ
ー配線を選択エッチングして形成する第1の工程と、前
記複数のスイッチング素子の各チャンネル部を規定する
第2の工程と、前記複数のスイッチング素子の各ソース
電極およびドレイン電極を介して前記画素電極に前記映
像信号を供給する複数の映像信号供給配線、および前記
各ソース電極となるソースダミー配線を選択エッチング
して形成する第3の工程と、前記複数の走査信号供給配
線上に積層して前記複数のスイッチング素子のゲート電
極に対する絶縁膜、および前記複数の映像信号供給配線
上に積層して前記複数のスイッチング素子に対する保護
膜となる各絶縁体層を選択エッチングし、前記複数の走
査信号供給配線および複数の映像信号供給配線を同時に
表面に開口する第4の工程と、前記画素電極を選択エッ
チングして形成する第5の工程と、前記走査信号供給配
線または映像信号供給配線のいずれか一方の層で実装端
子を形成し、その上に前記画素電極の層を積層し、その
上に異方性導電膜等の導電膜を用いて圧着実装する第6
の工程とを有し、前記第1から第6の工程を、その順序
で実行する方法とする。
According to a fourth aspect of the present invention, there is provided a display device for displaying an image on a screen using a liquid crystal, wherein the liquid crystal is sandwiched between opposed insulating transparent substrates, and the liquid crystal is formed. In a method of manufacturing a liquid crystal display device that turns on and off a plurality of switching elements according to a scanning signal and a video signal corresponding to a display image and drives the pixel through a pixel electrode to display an image on the screen, a plurality of pixels for displaying the image are displayed. As a process of forming a component including the plurality of switching elements in an array portion arranged in a matrix on the insulating transparent substrate, at least a plurality of scans for supplying a scanning signal to each gate electrode of the plurality of switching elements A first step of selectively etching and forming a signal supply wiring and a gate dummy wiring serving as each of the gate electrodes; A second step of defining each channel portion of the switching element; a plurality of video signal supply wirings for supplying the video signal to the pixel electrode via each source electrode and drain electrode of the plurality of switching elements; and A third step of selectively etching and forming a source dummy wiring serving as a source electrode; an insulating film laminated on the plurality of scanning signal supply wirings to a gate electrode of the plurality of switching elements; and the plurality of video signals. A fourth step of selectively etching each of the insulator layers which are stacked on the supply wiring and serve as protection films for the plurality of switching elements, and simultaneously opening the plurality of scanning signal supply wirings and the plurality of video signal supply wirings on the surface; A fifth step of forming the pixel electrode by selective etching, and any one of the scanning signal supply wiring and the video signal supply wiring. Forming a mounting terminal on one of the layers, by laminating a layer of the pixel electrode thereon, crimp implemented using a conductive film of the anisotropic conductive film or the like thereon sixth
And a method of executing the first to sixth steps in that order.

【0014】以上の構成および方法によると、走査信号
供給配線および映像信号供給配線を実装配線するために
第2の絶縁体層を開口除去するためのパタン形成、走査
信号供給配線の層と映像信号供給配線の層とを層変換す
るために第1の絶縁体層を開口除去するためのパタン形
成を同時に1回で行い、TFTアレープロセスにおける
フォトリソ工程のサイクル数を5回にするとともに、画
素電極の層を利用して走査信号供給配線層と映像信号供
給配線層との間を電気的に接続する。
According to the above configuration and method, a pattern is formed for removing an opening in the second insulator layer for mounting and wiring the scanning signal supply wiring and the video signal supply wiring. A pattern for opening and removing the first insulator layer is simultaneously formed once in order to convert a layer of the supply wiring to a layer, and the number of photolithography steps in the TFT array process is reduced to five, and the pixel electrode is formed. The electrical connection is made between the scanning signal supply wiring layer and the video signal supply wiring layer by using the above layers.

【0015】以下、本発明の実施の形態を示す液晶表示
装置およびその製造方法について、図面を参照しながら
具体的に説明する。図1は本実施の形態のアクティブマ
トリクス方式の液晶表示装置における一部断面図であ
り、従来例を示す図2と同じ部分については同一の符号
を付す。図1および図2において、1は絶縁性透明基板
であるガラス基板、2は、TFTアレー部分におけるガ
ラス基板1上にマトリクス状に配列されたTFTのゲー
ト電極を兼ね、そのTFTのゲート電極に走査信号を供
給する走査信号供給配線、3は、走査信号供給配線2上
に積層した第1の絶縁体層を成す第1絶縁膜で、TFT
のゲート電極に対するゲート絶縁膜、4はTFTの第1
絶縁膜(ゲート絶縁膜)3上に形成されたTFTのチャ
ンネル領域を形成するアモルファスシリコン半導体膜、
5は、TFTのアモルファスシリコン半導体膜4に接続
したソース電極を兼ね、ドレイン電極11を介して画素
電極7に映像信号を供給する映像信号供給配線、11は
TFTのアモルファスシリコン半導体膜4に接続したド
レイン電極、7は画面上の画素を構成するために複数個
がマトリクス状に配列された画素電極であり、この画素
電極7に対応してTFTもマトリクス状に配列されてい
る。6は、第2の絶縁体層を成す第2絶縁膜である保護
膜で、例えばSiNx、SiO2、アクリル樹脂、ポリ
イミド、ポリアミド、ポリカーボネート、またはこれら
の積層膜であり、TFTのパッシベーション絶縁膜であ
る。8は、第2絶縁膜6であるパッシベーション絶縁膜
を開口除去した後に形成したコンタクトホールパタンで
あり、このコンタクトホールパタン8を介して画素電極
7とドレイン電極11とを電気的に接続させる。
Hereinafter, a liquid crystal display device and a method for manufacturing the same according to an embodiment of the present invention will be described in detail with reference to the drawings. FIG. 1 is a partial cross-sectional view of an active matrix type liquid crystal display device of the present embodiment, and the same portions as those of FIG. 2 showing a conventional example are denoted by the same reference numerals. 1 and 2, reference numeral 1 denotes a glass substrate which is an insulating transparent substrate, and 2 denotes a gate electrode of the TFTs arranged in a matrix on the glass substrate 1 in the TFT array portion. A scanning signal supply wiring 3 for supplying a signal is a first insulating film forming a first insulator layer laminated on the scanning signal supply wiring 2, and a TFT
The gate insulating film for the gate electrode of the TFT, 4 is the first of the TFT
An amorphous silicon semiconductor film forming a channel region of a TFT formed on the insulating film (gate insulating film) 3;
Reference numeral 5 denotes a video signal supply line which also serves as a source electrode connected to the amorphous silicon semiconductor film 4 of the TFT and supplies a video signal to the pixel electrode 7 via the drain electrode 11, and 11 is connected to the amorphous silicon semiconductor film 4 of the TFT The drain electrode 7 is a pixel electrode in which a plurality of pixels are arranged in a matrix in order to form a pixel on the screen, and the TFTs are also arranged in a matrix corresponding to the pixel electrode 7. Reference numeral 6 denotes a protective film which is a second insulating film forming a second insulator layer, and is, for example, SiNx, SiO 2 , acrylic resin, polyimide, polyamide, polycarbonate, or a laminated film thereof, and is a passivation insulating film of a TFT. is there. Reference numeral 8 denotes a contact hole pattern formed after the opening of the passivation insulating film serving as the second insulating film 6 is removed. The pixel electrode 7 and the drain electrode 11 are electrically connected through the contact hole pattern 8.

【0016】ここまで説明した構成は従来例を示す図2
と同じであり、本実施の形態を示す図1が従来例を示す
図2と異なるところは以下の通りである。すなわち、前
述した走査信号供給配線2の層と映像信号供給配線5の
層とを電気的に接続し各層間における層変換を行わせる
際に、従来では、図2に示すように、第1絶縁膜3の層
を開口除去した後にコンタクトホールパタン10を設
け、走査信号供給配線2と映像信号供給配線5とを直接
電気的に接続させていた。
The structure described so far is a conventional example shown in FIG.
The difference between FIG. 1 showing the present embodiment and FIG. 2 showing the conventional example is as follows. That is, when the above-described layer of the scanning signal supply wiring 2 and the layer of the video signal supply wiring 5 are electrically connected to perform layer conversion between the respective layers, conventionally, as shown in FIG. After the opening of the layer of the film 3 was removed, a contact hole pattern 10 was provided, and the scanning signal supply wiring 2 and the video signal supply wiring 5 were directly electrically connected.

【0017】これに対し、本実施の形態では、図1の配
線変換部に示すように、走査信号供給配線2の表面にお
ける開口を、第2絶縁膜6の堆積以降に第1絶縁膜3と
第2絶縁膜6とを同時に除去することにより行い、その
表面開口部において、画素電極7の一部が走査信号供給
配線2と導通するように、画素電極7と走査信号供給配
線2間にコンタクトホールパタン9を形成することによ
って、走査信号供給配線2と映像信号供給配線5は、画
素電極7を介して間接的に電気的接続がなされるように
構成したことである。
On the other hand, in the present embodiment, as shown in the wiring conversion section of FIG. 1, an opening in the surface of the scanning signal supply wiring 2 is formed with the first insulating film 3 after the deposition of the second insulating film 6. The contact is performed between the pixel electrode 7 and the scanning signal supply line 2 so that a part of the pixel electrode 7 is electrically connected to the scanning signal supply line 2 at the surface opening of the second insulation film 6. By forming the hole pattern 9, the scanning signal supply wiring 2 and the video signal supply wiring 5 are configured to be electrically connected indirectly via the pixel electrode 7.

【0018】走査信号供給配線2及び映像信号供給配線
5を実装するための第2絶縁膜6であるパッシベーショ
ン絶縁膜を開口除去するパタンの形成、走査信号供給配
線2の層と映像信号供給配線5の層を層変換するための
第1絶縁膜3であるゲート絶縁膜を開口除去するパタン
の形成を同時に1回で行い、上記のフォトリソ工程のサ
イクル数を5回にし、全製造プロセスにおけるリードタ
イムを短縮することができ、全プロセスにおけるコスト
を削減することができる。
Forming a pattern for removing an opening in a passivation insulating film which is a second insulating film 6 for mounting the scanning signal supply wiring 2 and the video signal supply wiring 5, a layer of the scanning signal supply wiring 2 and the video signal supply wiring 5 The pattern for opening and removing the gate insulating film, which is the first insulating film 3 for converting the layers of the layers, is simultaneously formed once, and the number of cycles of the photolithography process is set to five, and the lead time in the entire manufacturing process is increased. Can be reduced, and costs in the entire process can be reduced.

【0019】このような構成の液晶表示装置のアレー基
板作成方法としては、まず、ガラス基板1上に走査信号
供給配線2をスパッタリング成膜法にて薄膜堆積を行
い、フォトリソ工程、エッチング工程にて走査信号供給
配線2のパターニングを行う。このような薄膜堆積、フ
ォトリソ工程、エッチング工程のパターニングを繰り返
すことにより、アモルファスシリコン半導体膜4、及び
映像信号供給配線5及びドレイン電極11及び画素電極
7を形成する。
As a method of forming an array substrate of a liquid crystal display device having such a configuration, first, a scanning signal supply wiring 2 is thin-film deposited on a glass substrate 1 by a sputtering film forming method, and a photolithography process and an etching process are performed. The scanning signal supply wiring 2 is patterned. By repeating the patterning of the thin film deposition, the photolithography step, and the etching step, the amorphous silicon semiconductor film 4, the video signal supply wiring 5, the drain electrode 11, and the pixel electrode 7 are formed.

【0020】このように、配線変換部における走査信号
供給配線2の表面開口除去を、第2絶縁膜6の堆積以降
に第1絶縁膜3と第2絶縁膜6とを同時に行い、走査信
号供給配線2と映像信号供給配線5は、画素電極7を介
して間接的に電気的接続がなされるように構成した液晶
表示装置では、走査信号供給配線2及び映像信号供給配
線5を実装配線するためにパッシベーション絶縁膜を開
口除去するためのパタンの形成、走査信号供給配線2の
層と映像信号供給配線5の層とを層変換するためにゲー
ト絶縁膜を開口除去するためのパタンの形成を同時に1
回で行って、上記のフォトリソサイクルを5回にするこ
とができる。
As described above, the removal of the surface opening of the scanning signal supply wiring 2 in the wiring conversion unit is performed on the first insulation film 3 and the second insulation film 6 simultaneously after the deposition of the second insulation film 6 to supply the scanning signal. In a liquid crystal display device in which the wiring 2 and the video signal supply wiring 5 are electrically connected indirectly via the pixel electrode 7, the wiring 2 and the video signal supply wiring 5 are mounted and wired. Simultaneously forming a pattern for removing the opening of the passivation insulating film, and simultaneously forming a pattern for removing the opening of the gate insulating film to convert the layer of the scanning signal supply wiring 2 and the layer of the video signal supply wiring 5 into layers. 1
The photolithography cycle can be performed five times.

【0021】その結果、アレープロセスにおいて、薄膜
堆積、フォトリソ工程、エッチング工程、その他洗浄工
程等の多くの工程が必要であったものを大幅に低減する
ことができ、アレープロセスリードタイムも大幅に短縮
することができるとともに、プロセスコストをも削減す
ることができる。
As a result, in the array process, those requiring many steps such as thin film deposition, photolithography, etching, and other cleaning steps can be greatly reduced, and the array process lead time is also significantly reduced. And the process cost can be reduced.

【0022】[0022]

【発明の効果】以上のように本発明によれば、走査信号
供給配線および映像信号供給配線を実装配線するために
第2の絶縁体層を開口除去するためのパタン形成、走査
信号供給配線の層と映像信号供給配線の層とを層変換す
るために第1の絶縁体層を開口除去するためのパタン形
成を同時に1回で行い、TFTアレープロセスにおける
フォトリソ工程のサイクル数を5回にするとともに、画
素電極の層を利用して走査信号供給配線層と映像信号供
給配線層との間を電気的に接続することができる。
As described above, according to the present invention, a pattern for removing an opening in the second insulator layer for mounting and wiring the scanning signal supply wiring and the video signal supply wiring, and the formation of the scanning signal supply wiring. A pattern for opening and removing the first insulator layer is simultaneously formed once to convert the layer and the layer of the video signal supply wiring into one layer, and the number of photolithography steps in the TFT array process is set to five. In addition, the scanning signal supply wiring layer and the video signal supply wiring layer can be electrically connected using the pixel electrode layer.

【0023】そのため、 TFTアレープロセスにおけ
るフォトリソ工程のサイクル数を低減し、その工程を含
む全体のプロセスリードタイムを短縮することができ、
TFTアレーの全製造プロセスにおけるコストを削減す
ることができる。
Therefore, the number of photolithography process cycles in the TFT array process can be reduced, and the overall process lead time including that process can be shortened.
The cost in the whole manufacturing process of the TFT array can be reduced.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施の形態の液晶表示装置およびその
製造方法を示す断面構成図
FIG. 1 is a cross-sectional configuration diagram illustrating a liquid crystal display device and a method for manufacturing the same according to an embodiment of the present invention.

【図2】従来の液晶表示装置およびその製造方法を示す
断面構成図
FIG. 2 is a sectional view showing a conventional liquid crystal display device and a method for manufacturing the same.

【符号の説明】[Explanation of symbols]

1 ガラス基板 2 走査信号供給配線(ゲート電極) 3 第1絶縁膜 4 アモルファスシリコン半導体膜 5 映像信号供給配線(ソース電極) 6 第2絶縁膜 7 画素電極 8 (画素電極/映像信号供給配線間)コンタクトホ
ールパタン 9 (画素電極/走査信号供給配線間)コンタクトホ
ールパタン 10 (映像信号供給配線/走査信号供給配線間)コ
ンタクトホールパタン 11 ドレイン電極
Reference Signs List 1 glass substrate 2 scanning signal supply wiring (gate electrode) 3 first insulating film 4 amorphous silicon semiconductor film 5 video signal supply wiring (source electrode) 6 second insulating film 7 pixel electrode 8 (between pixel electrode and video signal supply wiring) Contact hole pattern 9 (between pixel electrode and scanning signal supply wiring) Contact hole pattern 10 (between video signal supply wiring and scanning signal supply wiring) Contact hole pattern 11 Drain electrode

───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 2H092 JA26 JA29 JA38 JA42 JA44 JB13 JB23 JB32 JB33 JB56 KA07 KA12 KA16 KA18 KB14 KB23 KB24 MA05 MA08 MA14 MA15 MA16 MA18 MA19 MA20 NA13 NA15 NA25 NA27 NA29 PA06 QA07  ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2H092 JA26 JA29 JA38 JA42 JA44 JB13 JB23 JB32 JB33 JB56 KA07 KA12 KA16 KA18 KB14 KB23 KB24 MA05 MA08 MA14 MA15 MA16 MA18 MA19 MA20 NA13 NA15 NA25 NA27 NA29 PA06 QA07

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 液晶を用いて画面上に画像表示する表示
装置であって、対向する絶縁性透明基板間に前記液晶を
挟持し、その液晶を表示画像に対応する走査信号および
映像信号により駆動して、前記画面上に画像表示する液
晶表示装置において、前記画像表示のための複数の画素
が前記絶縁性透明基板上にマトリクス状に配列されたア
レー部分の構成要素として、少なくとも、前記画素毎に
対応してマトリクス状に配列された複数の画素電極と、
前記画素電極毎に対応して配列された薄膜トランジスタ
からなる複数のスイッチング素子と、前記複数のスイッ
チング素子の各ゲート電極に前記走査信号を供給する複
数の走査信号供給配線と、前記複数のスイッチング素子
の各ソース電極およびドレイン電極を介して前記画素電
極に前記映像信号を供給する複数の映像信号供給配線
と、前記複数の走査信号供給配線上に積層して前記複数
のスイッチング素子のゲート電極に対する絶縁膜となる
第1の絶縁体層と、前記複数の映像信号供給配線上に積
層して前記複数のスイッチング素子に対する保護膜とな
る第2の絶縁体層とを備え、前記画素電極を、その一部
が、映像信号供給配線と第2の絶縁体層に形成されたコ
ンタクトホールパタンを介して電気的に導通し、かつ走
査信号供給配線と第1および第2の絶縁体層に形成され
たコンタクトホールパタンを介して電気的に導通するよ
う形成し、前記走査信号および映像信号による前記スイ
ッチング素子のオンオフにより、前記画素電極を通じて
前記液晶を駆動し画像表示することを特徴とする液晶表
示装置。
1. A display device for displaying an image on a screen using a liquid crystal, wherein the liquid crystal is sandwiched between opposing insulating transparent substrates, and the liquid crystal is driven by a scanning signal and a video signal corresponding to a display image. Then, in the liquid crystal display device for displaying an image on the screen, a plurality of pixels for displaying the image are arranged at least in each pixel as a component of an array portion arranged in a matrix on the insulating transparent substrate. A plurality of pixel electrodes arranged in a matrix corresponding to
A plurality of switching elements formed of thin film transistors arranged corresponding to the pixel electrodes, a plurality of scanning signal supply wirings for supplying the scanning signals to respective gate electrodes of the plurality of switching elements, and a plurality of switching elements. A plurality of video signal supply wirings for supplying the video signal to the pixel electrode via each source electrode and a drain electrode; and an insulating film laminated on the plurality of scanning signal supply wirings to a gate electrode of the plurality of switching elements A first insulator layer, and a second insulator layer laminated on the plurality of video signal supply wirings and serving as a protective film for the plurality of switching elements. Are electrically connected to the video signal supply wiring via a contact hole pattern formed in the second insulator layer, and are electrically connected to the scan signal supply wiring. And an electrically conductive pattern formed through a contact hole pattern formed in the second insulator layer, and the liquid crystal is driven through the pixel electrode by turning on and off the switching element by the scanning signal and the video signal, thereby forming an image. A liquid crystal display device for displaying.
【請求項2】 第1の絶縁体層が、半導体層を含む積層
構造であることを特徴とする請求項1記載の液晶表示装
置。
2. The liquid crystal display device according to claim 1, wherein the first insulator layer has a stacked structure including a semiconductor layer.
【請求項3】 第2の絶縁体層が、アクリル樹脂、ポリ
イミド、ポリアミド、ポリカーボネート等の透明樹脂
か、これらを含む積層構造であることを特徴とする請求
項1または請求項2記載の液晶表示装置。
3. The liquid crystal display according to claim 1, wherein the second insulator layer is a transparent resin such as an acrylic resin, a polyimide, a polyamide, or a polycarbonate, or has a laminated structure including these. apparatus.
【請求項4】 液晶を用いて画面上に画像表示する表示
装置であって、対向する絶縁性透明基板間に前記液晶を
挟持し、その液晶を表示画像に対応する走査信号および
映像信号により複数のスイッチング素子をオンオフして
画素電極を通じて駆動し、前記画面上に画像表示する液
晶表示装置の製造方法において、前記画像表示のための
複数の画素が前記絶縁性透明基板上にマトリクス状に配
列されたアレー部分の前記複数のスイッチング素子を含
む構成要素の形成工程として、少なくとも、前記複数の
スイッチング素子の各ゲート電極に走査信号を供給する
複数の走査信号供給配線および前記各ゲート電極となる
ゲートダミー配線を選択エッチングして形成する第1の
工程と、前記複数のスイッチング素子の各チャンネル部
を規定する第2の工程と、前記複数のスイッチング素子
の各ソース電極およびドレイン電極を介して前記画素電
極に前記映像信号を供給する複数の映像信号供給配線、
および前記各ソース電極となるソースダミー配線を選択
エッチングして形成する第3の工程と、前記複数の走査
信号供給配線上に積層して前記複数のスイッチング素子
のゲート電極に対する絶縁膜、および前記複数の映像信
号供給配線上に積層して前記複数のスイッチング素子に
対する保護膜となる各絶縁体層を選択エッチングし、前
記複数の走査信号供給配線および複数の映像信号供給配
線を同時に表面に開口する第4の工程と、前記画素電極
を選択エッチングして形成する第5の工程と、前記走査
信号供給配線または映像信号供給配線のいずれか一方の
層で実装端子を形成し、その上に前記画素電極の層を積
層し、その上に異方性導電膜等の導電膜を用いて圧着実
装する第6の工程とを有し、前記第1から第6の工程
を、その順序で実行することを特徴とする液晶表示装置
の製造方法。
4. A display device for displaying an image on a screen using liquid crystal, wherein said liquid crystal is sandwiched between opposing insulating transparent substrates, and said liquid crystal is formed by a plurality of scanning signals and video signals corresponding to a display image. In the method for manufacturing a liquid crystal display device that turns on and off the switching element and drives the pixel electrode through a pixel electrode to display an image on the screen, a plurality of pixels for displaying the image are arranged in a matrix on the insulating transparent substrate. As a process of forming a component including the plurality of switching elements in the array portion, at least a plurality of scanning signal supply lines for supplying a scanning signal to each gate electrode of the plurality of switching elements and a gate dummy serving as each of the gate electrodes A first step of forming a wiring by selective etching, and a second step of defining each channel of the plurality of switching elements. And a plurality of video signal supply lines for supplying the video signal to the pixel electrode via each source electrode and drain electrode of the plurality of switching elements,
A third step of selectively etching a source dummy wiring to be each of the source electrodes, forming an insulating film on the plurality of scanning signal supply wirings for a gate electrode of the plurality of switching elements, and Selectively etching each of the insulator layers that are stacked on the video signal supply wirings and serve as protective films for the plurality of switching elements, and simultaneously opening the plurality of scanning signal supply wirings and the plurality of video signal supply wirings on the surface. Step 4, a fifth step of forming the pixel electrode by selective etching, and forming a mounting terminal in one of the scanning signal supply wiring and the video signal supply wiring, and further forming the pixel electrode on the mounting terminal. A sixth step of laminating the above-mentioned layers and press-fitting thereon using a conductive film such as an anisotropic conductive film, and performing the first to sixth steps in that order. Method of manufacturing a liquid crystal display device according to claim Rukoto.
JP25019898A 1998-09-04 1998-09-04 Liquid crystal display device and manufacturing method thereof Pending JP2000081638A (en)

Priority Applications (5)

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JP25019898A JP2000081638A (en) 1998-09-04 1998-09-04 Liquid crystal display device and manufacturing method thereof
KR1020017002769A KR20010079729A (en) 1998-09-04 1999-08-26 Active matrix liquid crystal device and method for producing the same
CN99810547A CN1317106A (en) 1998-09-04 1999-08-26 Active matrix liquid crystal display and method for producing the same
PCT/JP1999/004606 WO2000014600A1 (en) 1998-09-04 1999-08-26 Active matrix liquid crystal device and method for producing the same
TW088115207A TW536647B (en) 1998-09-04 1999-09-07 Liquid crystal display device and manufacturing method

Applications Claiming Priority (1)

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JP25019898A JP2000081638A (en) 1998-09-04 1998-09-04 Liquid crystal display device and manufacturing method thereof

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