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ITRM20040199A1 - Amplificatore di rilevazione per un dispositivo di memoria non volatile. - Google Patents

Amplificatore di rilevazione per un dispositivo di memoria non volatile.

Info

Publication number
ITRM20040199A1
ITRM20040199A1 IT000199A ITRM20040199A ITRM20040199A1 IT RM20040199 A1 ITRM20040199 A1 IT RM20040199A1 IT 000199 A IT000199 A IT 000199A IT RM20040199 A ITRM20040199 A IT RM20040199A IT RM20040199 A1 ITRM20040199 A1 IT RM20040199A1
Authority
IT
Italy
Prior art keywords
memory device
volatile memory
detection amplifier
amplifier
detection
Prior art date
Application number
IT000199A
Other languages
English (en)
Inventor
Michele Incarnati
Giovanni Santin
Tommaso Vali
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Priority to IT000199A priority Critical patent/ITRM20040199A1/it
Publication of ITRM20040199A1 publication Critical patent/ITRM20040199A1/it
Priority to US10/912,520 priority patent/US7173856B2/en
Priority to PCT/US2005/013685 priority patent/WO2005106892A1/en
Priority to US11/651,687 priority patent/US7394699B2/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/067—Single-ended amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out
IT000199A 2004-04-21 2004-04-21 Amplificatore di rilevazione per un dispositivo di memoria non volatile. ITRM20040199A1 (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT000199A ITRM20040199A1 (it) 2004-04-21 2004-04-21 Amplificatore di rilevazione per un dispositivo di memoria non volatile.
US10/912,520 US7173856B2 (en) 2004-04-21 2004-08-05 Sense amplifier for a non-volatile memory device
PCT/US2005/013685 WO2005106892A1 (en) 2004-04-21 2005-04-21 Sense amplifier for a non-volatile memory device
US11/651,687 US7394699B2 (en) 2004-04-21 2007-01-10 Sense amplifier for a non-volatile memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT000199A ITRM20040199A1 (it) 2004-04-21 2004-04-21 Amplificatore di rilevazione per un dispositivo di memoria non volatile.

Publications (1)

Publication Number Publication Date
ITRM20040199A1 true ITRM20040199A1 (it) 2004-07-21

Family

ID=35456416

Family Applications (1)

Application Number Title Priority Date Filing Date
IT000199A ITRM20040199A1 (it) 2004-04-21 2004-04-21 Amplificatore di rilevazione per un dispositivo di memoria non volatile.

Country Status (2)

Country Link
US (1) US7173856B2 (it)
IT (1) ITRM20040199A1 (it)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005106892A1 (en) * 2004-04-21 2005-11-10 Micron Technology, Inc. Sense amplifier for a non-volatile memory device
US20070253255A1 (en) * 2006-04-28 2007-11-01 Girolamo Gallo Memory device, method for sensing a current output from a selected memory cell and sensing circuit
US7522463B2 (en) 2007-01-12 2009-04-21 Atmel Corporation Sense amplifier with stages to reduce capacitance mismatch in current mirror load
US7782695B2 (en) 2007-01-12 2010-08-24 Atmel Corporation Compensated current offset in a sensing circuit
ATE509350T1 (de) * 2007-12-21 2011-05-15 Em Microelectronic Marin Sa Lesevorrichtung eines nichtflüchtigen speichers mit geringem energieverbrauch und ihr anwendungsverfahren
US8693260B2 (en) * 2011-04-19 2014-04-08 Macronix International Co., Ltd. Memory array with two-phase bit line precharge
TWI489481B (zh) * 2011-05-20 2015-06-21 Macronix Int Co Ltd 具有二階段位元線預充電的記憶體陣列
US9543030B1 (en) * 2015-06-17 2017-01-10 Sandisk Technologies Llc Sense amplifier design for ramp sensing
KR20200086144A (ko) * 2019-01-08 2020-07-16 울산과학기술원 3진 메모리 셀 및 이를 포함하는 메모리 장치

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4823031A (en) * 1988-02-01 1989-04-18 Texas Instruments Incorporated Single-ended sense amplifier with positive feedback
US4982363A (en) * 1988-12-05 1991-01-01 Motorola, Inc. Sensing structure for single ended input
EP0936620A1 (en) 1998-02-13 1999-08-18 STMicroelectronics S.r.l. Bit line polarisation system for extended supply range non volatile memory sense amplifier
JP3471251B2 (ja) 1999-04-26 2003-12-02 Ｎｅｃエレクトロニクス株式会社 不揮発性半導体記憶装置
US6137741A (en) * 1999-09-16 2000-10-24 Winbond Electronics Corporation Sense amplifier with cascode output
JP2001184881A (ja) * 1999-12-28 2001-07-06 Toshiba Corp 不揮発性半導体メモリの読み出し回路
ITRM20010001A1 (it) * 2001-01-03 2002-07-03 Micron Technology Inc Circuiteria di rilevazione per memorie flash a bassa tensione.
CA2345845C (en) * 2001-04-30 2012-03-27 Mosaid Technologies Incorporated Bitline precharge
US6507222B1 (en) * 2001-07-23 2003-01-14 Cirrus Logic, Inc. High speed single ended sense amplifier
US6643178B2 (en) * 2001-07-31 2003-11-04 Fujitsu Limited System for source side sensing
ITRM20010531A1 (it) * 2001-08-31 2003-02-28 Micron Technology Inc Dispositivo rilevatore a bassa potenza e alta tensione per memorie ditipo flash.
US6856536B2 (en) * 2002-08-02 2005-02-15 Unity Semiconductor Corporation Non-volatile memory with a single transistor and resistive memory element
KR100488542B1 (ko) * 2002-10-21 2005-05-11 삼성전자주식회사 비트라인 프리차아지 타임을 개선한 반도체 메모리 장치
JP4583703B2 (ja) * 2002-10-30 2010-11-17 ルネサスエレクトロニクス株式会社 半導体記憶装置
KR100506975B1 (ko) * 2002-12-23 2005-08-09 삼성전자주식회사 개선된 비트라인 센싱동작을 갖는 반도체 메모리 장치
US6771551B1 (en) * 2003-02-04 2004-08-03 Broadcom Corporation Sense amplifier with adaptive reference generation
US6876595B2 (en) * 2003-06-05 2005-04-05 International Business Machines Corporation Decode path gated low active power SRAM
KR100546373B1 (ko) * 2003-08-28 2006-01-26 삼성전자주식회사 기준셀을 사용하지 않는 ｖｓｓ／ｖｄｄ 비트라인프리차지 스킴을 갖는 반도체 메모리장치

Also Published As

Publication number Publication date
US7173856B2 (en) 2007-02-06
US20050237810A1 (en) 2005-10-27

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