ITMI932044A0 - Metodo de fabbricazione di un dispositivo a semiconduttore - Google Patents
Metodo de fabbricazione di un dispositivo a semiconduttoreInfo
- Publication number
- ITMI932044A0 ITMI932044A0 ITMI932044A ITMI932044A0 IT MI932044 A0 ITMI932044 A0 IT MI932044A0 IT MI932044 A ITMI932044 A IT MI932044A IT MI932044 A0 ITMI932044 A0 IT MI932044A0
- Authority
- IT
- Italy
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR920017608 | 1992-09-26 |
Publications (3)
Publication Number | Publication Date |
---|---|
ITMI932044A0 true ITMI932044A0 (it) | 1993-09-24 |
ITMI932044A1 ITMI932044A1 (it) | 1995-03-24 |
IT1272674B IT1272674B (it) | 1997-06-26 |
Family
ID=19340175
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ITMI932044A IT1272674B (it) | 1992-09-26 | 1993-09-24 | Metodo di fabbricazione di un dispositivo a semiconduttore |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPH06209049A (it) |
CN (1) | CN1087446A (it) |
DE (1) | DE4332605A1 (it) |
GB (1) | GB2271467A (it) |
IT (1) | IT1272674B (it) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004172259A (ja) | 2002-11-19 | 2004-06-17 | Oki Electric Ind Co Ltd | 半導体素子の製造方法 |
KR100650858B1 (ko) | 2005-12-23 | 2006-11-28 | 주식회사 하이닉스반도체 | 플래쉬 메모리 소자의 제조 방법 |
JP5029257B2 (ja) * | 2007-01-17 | 2012-09-19 | 東京エレクトロン株式会社 | 載置台構造及び処理装置 |
CN104810263B (zh) * | 2014-01-24 | 2018-11-20 | 北大方正集团有限公司 | 栅氧化层的制造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4139658A (en) * | 1976-06-23 | 1979-02-13 | Rca Corp. | Process for manufacturing a radiation hardened oxide |
DE3206376A1 (de) * | 1982-02-22 | 1983-09-01 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung von siliziumoxidschichten |
-
1993
- 1993-09-24 JP JP5237814A patent/JPH06209049A/ja active Pending
- 1993-09-24 IT ITMI932044A patent/IT1272674B/it active IP Right Grant
- 1993-09-24 DE DE4332605A patent/DE4332605A1/de not_active Withdrawn
- 1993-09-24 GB GB9319730A patent/GB2271467A/en not_active Withdrawn
- 1993-09-25 CN CN93118158.5A patent/CN1087446A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
GB9319730D0 (en) | 1993-11-10 |
JPH06209049A (ja) | 1994-07-26 |
CN1087446A (zh) | 1994-06-01 |
DE4332605A1 (de) | 1994-03-31 |
IT1272674B (it) | 1997-06-26 |
GB2271467A (en) | 1994-04-13 |
ITMI932044A1 (it) | 1995-03-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR0169945B1 (en) | Method of manufacturing a semiconductor device | |
DE69634289D1 (de) | Herstellungsverfahren einer Halbleitervorrichtung | |
DE69309817D1 (de) | Herstellungsverfahren einer lichtemittierenden Halbleitervorrichtung | |
DE69534709D1 (de) | Herstellungsverfahren einer Halbleiteranordnung | |
KR0134950B1 (en) | Method of manufacturing a semiconductor device | |
FI951142L (fi) | Menetelmä integroitujen piirilaitteiden valmistamiseksi | |
KR900012335A (ko) | 반도체장치의 제조방법 | |
KR900015300A (ko) | 반도체장치의 제조방법 | |
KR900019176A (ko) | 반도체장치의 제조방법 | |
GB9105943D0 (en) | A method of manufacturing a semiconductor device | |
KR960016318B1 (en) | Method of manufacturing semiconductor device | |
KR900012331A (ko) | 반도체장치의 제조방법 | |
KR900012342A (ko) | 반도체장치의 제조방법 | |
KR900013613A (ko) | 반도체장치의 제조방법 | |
KR910007132A (ko) | 반도체장치의 제조방법 | |
KR900013619A (ko) | 반도체장치의 제조방법 | |
DE69230694D1 (de) | Herstellungsverfahren einer Halbleiterlaservorrichtung | |
FI956099A0 (fi) | Menetelmä puolijohdelaitteen valmistamiseksi | |
DE69625007D1 (de) | Halbleiterelement-Herstellungsverfahren | |
KR910007138A (ko) | 반도체장치의 제조방법 | |
KR910007082A (ko) | 반도체장치의 제조방법 | |
ITMI932044A0 (it) | Metodo de fabbricazione di un dispositivo a semiconduttore | |
KR960015805A (ko) | 반도체 장치의 제조 방법 | |
IT9022110A0 (it) | Metodo di isolamento di un dispositivo a semiconduttori | |
KR920700478A (ko) | 반도체장치의 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
0001 | Granted |