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ITMI20001753A0 - Dispositivo capacitivo integrato con strato dielettrico degradabile dall'idrogeno protetto da starato getter. - Google Patents

Dispositivo capacitivo integrato con strato dielettrico degradabile dall'idrogeno protetto da starato getter.

Info

Publication number
ITMI20001753A0
ITMI20001753A0 IT2000MI001753A ITMI20001753A ITMI20001753A0 IT MI20001753 A0 ITMI20001753 A0 IT MI20001753A0 IT 2000MI001753 A IT2000MI001753 A IT 2000MI001753A IT MI20001753 A ITMI20001753 A IT MI20001753A IT MI20001753 A0 ITMI20001753 A0 IT MI20001753A0
Authority
IT
Italy
Prior art keywords
starato
getter
hydrogen
dielectric layer
device integrated
Prior art date
Application number
IT2000MI001753A
Other languages
English (en)
Inventor
Marco Amiotti
Claudio Boffito
Jac Hak Jung
Original Assignee
Getters Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Getters Spa filed Critical Getters Spa
Publication of ITMI20001753A0 publication Critical patent/ITMI20001753A0/it
Priority to IT2000MI001753A priority Critical patent/IT1318279B1/it
Priority to TW090117834A priority patent/TW516215B/zh
Priority to HK04100289.6A priority patent/HK1057646B/xx
Priority to CN01813251.0A priority patent/CN1193404C/zh
Priority to PCT/IT2001/000399 priority patent/WO2002011192A1/en
Priority to JP2002516820A priority patent/JP2004505463A/ja
Priority to AU2001277692A priority patent/AU2001277692A1/en
Priority to EP01955534A priority patent/EP1305822A1/en
Publication of ITMI20001753A1 publication Critical patent/ITMI20001753A1/it
Priority to US10/353,159 priority patent/US6762446B2/en
Application granted granted Critical
Publication of IT1318279B1 publication Critical patent/IT1318279B1/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
IT2000MI001753A 2000-07-28 2000-07-28 Dispositivo capacitivo integrato con strato dielettrico degradabiledall'idrogeno protetto da strato getter. IT1318279B1 (it)

Priority Applications (9)

Application Number Priority Date Filing Date Title
IT2000MI001753A IT1318279B1 (it) 2000-07-28 2000-07-28 Dispositivo capacitivo integrato con strato dielettrico degradabiledall'idrogeno protetto da strato getter.
TW090117834A TW516215B (en) 2000-07-28 2001-07-20 Integrated device, ferroelectric storage device and DRAM device
PCT/IT2001/000399 WO2002011192A1 (en) 2000-07-28 2001-07-25 Integrated capacitive device with hydrogen degradable dielectric layer protected by getter layer
CN01813251.0A CN1193404C (zh) 2000-07-28 2001-07-25 具有受吸气层保护的氢退化介电层的集成电容器件
HK04100289.6A HK1057646B (en) 2000-07-28 2001-07-25 Integrated capacitive device with hydrogen degradable dielectric layer protected by getter layer
JP2002516820A JP2004505463A (ja) 2000-07-28 2001-07-25 ゲッター層により保護された水素劣化性誘電体層を備えた集積容量型デバイス
AU2001277692A AU2001277692A1 (en) 2000-07-28 2001-07-25 Integrated capacitive device with hydrogen degradable dielectric layer protectedby getter layer
EP01955534A EP1305822A1 (en) 2000-07-28 2001-07-25 Integrated capacitive device with hydrogen degradable dielectric layer protected by getter layer
US10/353,159 US6762446B2 (en) 2000-07-28 2003-01-27 Integrated capacitive device with hydrogen degradable dielectric layer protected by getter layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT2000MI001753A IT1318279B1 (it) 2000-07-28 2000-07-28 Dispositivo capacitivo integrato con strato dielettrico degradabiledall'idrogeno protetto da strato getter.

Publications (3)

Publication Number Publication Date
ITMI20001753A0 true ITMI20001753A0 (it) 2000-07-28
ITMI20001753A1 ITMI20001753A1 (it) 2002-01-28
IT1318279B1 IT1318279B1 (it) 2003-07-28

Family

ID=11445610

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2000MI001753A IT1318279B1 (it) 2000-07-28 2000-07-28 Dispositivo capacitivo integrato con strato dielettrico degradabiledall'idrogeno protetto da strato getter.

Country Status (8)

Country Link
US (1) US6762446B2 (it)
EP (1) EP1305822A1 (it)
JP (1) JP2004505463A (it)
CN (1) CN1193404C (it)
AU (1) AU2001277692A1 (it)
IT (1) IT1318279B1 (it)
TW (1) TW516215B (it)
WO (1) WO2002011192A1 (it)

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US20040163233A1 (en) * 2003-02-26 2004-08-26 Stefan Gernhardt Methods of forming electrical connections within ferroelectric devices
US7045418B2 (en) * 2003-03-12 2006-05-16 Texas Instruments Incorporated Semiconductor device including a dielectric layer having a gettering material located therein and a method of manufacture therefor
US20050037521A1 (en) * 2003-08-15 2005-02-17 Uwe Wellhausen Methods and apparatus for processing semiconductor devices by gas annealing
FR2859202B1 (fr) * 2003-08-29 2005-10-14 Commissariat Energie Atomique Compose piegeur de l'hydrogene, procede de fabrication et utilisations
US7071506B2 (en) * 2003-09-05 2006-07-04 Infineon Technologies Ag Device for inhibiting hydrogen damage in ferroelectric capacitor devices
JP4997757B2 (ja) * 2005-12-20 2012-08-08 富士通株式会社 薄膜キャパシタ及びその製造方法、電子装置並びに回路基板
US8093698B2 (en) * 2006-12-05 2012-01-10 Spansion Llc Gettering/stop layer for prevention of reduction of insulating oxide in metal-insulator-metal device
US7592273B2 (en) * 2007-04-19 2009-09-22 Freescale Semiconductor, Inc. Semiconductor device with hydrogen barrier and method therefor
JP5772052B2 (ja) * 2011-02-23 2015-09-02 セイコーエプソン株式会社 焦電型検出器、焦電型検出装置及び電子機器
FR2984003B1 (fr) * 2011-12-12 2014-01-10 Commissariat Energie Atomique Procede et dispositif de reduction du degazage de dechets trities issus de l'industrie nucleaire
KR101380309B1 (ko) * 2012-05-23 2014-04-02 주식회사 동부하이텍 커패시터 및 그 형성 방법
CN106935506A (zh) * 2015-12-31 2017-07-07 中芯国际集成电路制造(上海)有限公司 鳍式场效应晶体管的形成方法
US10038092B1 (en) * 2017-05-24 2018-07-31 Sandisk Technologies Llc Three-level ferroelectric memory cell using band alignment engineering
US10622960B2 (en) * 2017-10-17 2020-04-14 Mitsubishi Electric Research Laboratories, Inc. Filters with virtual inductor implemented using negative capacitor
KR102448843B1 (ko) 2017-12-29 2022-09-28 엘지디스플레이 주식회사 유기전계발광 표시장치 및 그 제조방법
US11527702B2 (en) * 2018-07-11 2022-12-13 Taiwan Semiconductor Manufacturing Company, Ltd. Piezoelectric device with hydrogen getter
US11322580B2 (en) * 2019-08-05 2022-05-03 Taiwan Semiconductor Manufacturing Company, Ltd. Titanium layer as getter layer for hydrogen in a MIM device
CN114271828B (zh) * 2021-12-22 2023-08-29 香港城市大学成都研究院 一种用于脑机接口的可降解高阵列柔性器件及其制备方法

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Also Published As

Publication number Publication date
JP2004505463A (ja) 2004-02-19
TW516215B (en) 2003-01-01
WO2002011192A1 (en) 2002-02-07
ITMI20001753A1 (it) 2002-01-28
CN1444773A (zh) 2003-09-24
US20030136989A1 (en) 2003-07-24
CN1193404C (zh) 2005-03-16
IT1318279B1 (it) 2003-07-28
AU2001277692A1 (en) 2002-02-13
HK1057646A1 (en) 2004-04-08
US6762446B2 (en) 2004-07-13
EP1305822A1 (en) 2003-05-02

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