IT8547677A0 - Dispositivo a semiconduttore, in particolare circuito darlington, bipolare-mos integrato - Google Patents

Dispositivo a semiconduttore, in particolare circuito darlington, bipolare-mos integrato

Info

Publication number: IT8547677A0
Authority: IT; Italy
Prior art keywords: bipolar; semiconductor device; darlington circuit; mos integrated; mos
Prior art date: 1984-03-16

Application number

IT8547677A

Other languages

English (en)

Other versions

IT8547677A1 (it

IT1182194B (it

Inventor

Perry L Merrill

Rodney R Stoltenburg

Original Assignee

Motorola Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1984-03-16

Filing date

1985-02-13

Publication date

1985-02-13

1985-02-13 Application filed by Motorola Inc filed Critical Motorola Inc

1985-02-13 Publication of IT8547677A0 publication Critical patent/IT8547677A0/it

1986-08-13 Publication of IT8547677A1 publication Critical patent/IT8547677A1/it

1987-09-30 Application granted granted Critical

1987-09-30 Publication of IT1182194B publication Critical patent/IT1182194B/it

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/121—BJTs having built-in components
- H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
- H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
- H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

IT47677/85A 1984-03-16 1985-02-13 Dispositivo a semiconduttore,in particolare circuito darlington, bipolare-mos integrato IT1182194B (it)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US06/590,235 US4783694A (en)	1984-03-16	1984-03-16	Integrated bipolar-MOS semiconductor device with common collector and drain

Publications (3)

Publication Number	Publication Date
IT8547677A0 true IT8547677A0 (it)	1985-02-13
IT8547677A1 IT8547677A1 (it)	1986-08-13
IT1182194B IT1182194B (it)	1987-09-30

Family

ID=24361413

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IT47677/85A IT1182194B (it)	1984-03-16	1985-02-13	Dispositivo a semiconduttore,in particolare circuito darlington, bipolare-mos integrato

Country Status (4)

Country	Link
US (1)	US4783694A (it)
EP (1)	EP0174318A1 (it)
IT (1)	IT1182194B (it)
WO (1)	WO1985004285A1 (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2614154A1 (fr) *	1987-04-17	1988-10-21	Thomson Semiconducteurs	Reseau d'aide a la commutation d'un transistor bipolaire de puissance
SE461428B (sv) *	1988-06-16	1990-02-12	Ericsson Telefon Ab L M	Foerfarande foer att paa ett underlag av halvledarmaterial framstaella en bipolaer transistor eller en bipolaer transistor och en faelteffekttransistor eller en bipolaer transistor och en faelteffekttransistor med en komplementaer faelteffekttransistor och anordningar framstaellda enligt foerfarandena
US5072266A (en)	1988-12-27	1991-12-10	Siliconix Incorporated	Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry
JPH0831541B2 (ja) *	1989-02-16	1996-03-27	株式会社東芝	半導体集積回路
US5247200A (en) *	1989-02-16	1993-09-21	Kabushiki Kaisha Toshiba	MOSFET input type BiMOS IC device
US5097305A (en) *	1991-02-19	1992-03-17	Synaptics Corporation	Integrating photosensor and imaging system having wide dynamic range
US5324958A (en) *	1991-02-19	1994-06-28	Synaptics, Incorporated	Integrating imaging systgem having wide dynamic range with sample/hold circuits
US5260592A (en) *	1991-02-19	1993-11-09	Synaptics, Incorporated	Integrating photosensor and imaging system having wide dynamic range with varactors
EP0629001B1 (en) *	1993-06-10	1998-07-29	Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno	Integrated monolithic structure of a vertical bipolar transistor and a vertical MOSFET transistor
JP4197660B2 (ja) *	2004-04-30	2008-12-17	ローム株式会社	Ｍｏｓトランジスタおよびこれを備えた半導体集積回路装置
US8874188B2 (en) *	2008-12-17	2014-10-28	Koninklijke Philips N.V.	Arrangement and method for influencing and/or detecting magnetic particles

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3702947A (en) *	1970-10-21	1972-11-14	Itt	Monolithic darlington transistors with common collector and seperate subcollectors
US3821780A (en) *	1972-10-24	1974-06-28	Gen Motors Corp	Double mesa transistor with integral bleeder resistors
US3813588A (en) *	1973-07-09	1974-05-28	Motorola Inc	Efficient power darlington device configuration
US3913213A (en) *	1974-08-02	1975-10-21	Trw Inc	Integrated circuit transistor switch
JPS52132684A (en) *	1976-04-29	1977-11-07	Sony Corp	Insulating gate type field effect transistor
US4055884A (en) *	1976-12-13	1977-11-01	International Business Machines Corporation	Fabrication of power field effect transistors and the resulting structures
JPS53142184A (en) *	1977-05-18	1978-12-11	Hitachi Ltd	Darlington transistor
US4198693A (en) *	1978-03-20	1980-04-15	Texas Instruments Incorporated	VMOS Read only memory
NL184185C (nl) *	1978-04-07	1989-05-01	Philips Nv	Darlingtonschakeling met een geintegreerde halfgeleiderdiode.
US4206469A (en) *	1978-09-15	1980-06-03	Westinghouse Electric Corp.	Power metal-oxide-semiconductor-field-effect-transistor
US4199774A (en) *	1978-09-18	1980-04-22	The Board Of Trustees Of The Leland Stanford Junior University	Monolithic semiconductor switching device
US4329705A (en) *	1979-05-21	1982-05-11	Exxon Research & Engineering Co.	VMOS/Bipolar power switching device
US4366522A (en) *	1979-12-10	1982-12-28	Reliance Electric Company	Self-snubbing bipolar/field effect (biofet) switching circuits and method
JPS5765269A (en) *	1980-10-06	1982-04-20	Shindengen Electric Mfg Co Ltd	Single transistor type converter
US4430663A (en) *	1981-03-25	1984-02-07	Bell Telephone Laboratories, Incorporated	Prevention of surface channels in silicon semiconductor devices
FR2505102B1 (fr) *	1981-04-29	1986-01-24	Radiotechnique Compelec	Amplificateur de type darlington forme d'un transistor a effet de champ et d'un transistor bipolaire, et sa realisation en structure semi-conductrice integree
US4441117A (en) *	1981-07-27	1984-04-03	Intersil, Inc.	Monolithically merged field effect transistor and bipolar junction transistor
JPS5892263A (ja) *	1981-11-28	1983-06-01	Fuji Electric Co Ltd	ダ−リントントランジスタ
DE3210353A1 (de) *	1982-03-20	1983-09-22	Robert Bosch Gmbh, 7000 Stuttgart	Monolithisch integrierte darlingtonschaltung
JPS58165374A (ja) *	1982-03-26	1983-09-30	Hitachi Ltd	複合トランジスタ
US4489341A (en) *	1982-09-27	1984-12-18	Sprague Electric Company	Merged-transistor switch with extra P-type region

1984
- 1984-03-16 US US06/590,235 patent/US4783694A/en not_active Expired - Fee Related
1985
- 1985-01-22 EP EP85900902A patent/EP0174318A1/en not_active Withdrawn
- 1985-01-22 WO PCT/US1985/000096 patent/WO1985004285A1/en unknown
- 1985-02-13 IT IT47677/85A patent/IT1182194B/it active

Also Published As

Publication number	Publication date
IT8547677A1 (it)	1986-08-13
US4783694A (en)	1988-11-08
WO1985004285A1 (en)	1985-09-26
IT1182194B (it)	1987-09-30
EP0174318A1 (en)	1986-03-19

Publication	Publication Date	Title
IT8221971A0 (it)	1982-06-21	Dispositivo a circuito integrato a semiconduttori.
IT8124892A0 (it)	1981-11-05	Dispositivo a circuito integrato a semiconduttori.
EP0166003A4 (en)	1987-06-29	INTEGRATED SEMICONDUCTOR CIRCUIT.
KR900010988A (ko)	1990-07-11	반도체 집적회로장치
KR900008673A (ko)	1990-06-03	반도체집적회로장치
DE3879804D1 (de)	1993-05-06	Integrierte halbleiterschaltungsvorrichtung.
IT8421908A0 (it)	1984-07-16	Dispositivo a circuito integrato a semiconduttore.
GB2195496B (en)	1989-05-17	A semiconductor integrated circuit device
IT8124940A0 (it)	1981-11-10	Circuito integrato a semiconduttori.
KR890017789A (ko)	1989-12-18	반도체 집적회로장치
KR900017269A (ko)	1990-11-15	반도체 집적회로 장치
DE3584799D1 (de)	1992-01-16	Halbleitervorrichtung.
IT8422073A0 (it)	1984-07-26	Dispositivo a circuito integrato a semiconduttori in particolare includenti dispositivi di memoria.
IT8224203A0 (it)	1982-11-11	Dispositivo a circuito integrato a semiconduttori.
KR850007157A (ko)	1985-10-30	반도체 집적 회로장치
DE3586568D1 (de)	1992-10-08	Halbleitereinrichtung.
IT8547677A0 (it)	1985-02-13	Dispositivo a semiconduttore, in particolare circuito darlington, bipolare-mos integrato
MX154938A (es)	1988-01-08	Mejoras en un dispositivo semiconductor
IT8122142A0 (it)	1981-06-04	Dispositivo a circuito integrato a semiconduttori.
NL193883B (nl)	2000-09-01	Geïntegreerde halfgeleiderinrichting.
IT8223283A0 (it)	1982-09-15	Dispositivo a circuito integrato a semiconduttori.
ES546383A0 (es)	1987-03-01	Dispositivo de circuito integrado.
KR870005463A (ko)	1987-06-09	칩을 갖는 집적회로 장치
IT8125408A0 (it)	1981-12-02	Dispositivo a circuito integrato a semiconduttori.
KR900011093A (ko)	1990-07-11	집적 회로형 반도체 소자