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JPS53142184A - Darlington transistor - Google Patents

Darlington transistor

Info

Publication number
JPS53142184A
JPS53142184A JP5641477A JP5641477A JPS53142184A JP S53142184 A JPS53142184 A JP S53142184A JP 5641477 A JP5641477 A JP 5641477A JP 5641477 A JP5641477 A JP 5641477A JP S53142184 A JPS53142184 A JP S53142184A
Authority
JP
Japan
Prior art keywords
resistance value
darlington transistor
regions
piercing regions
pierces
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5641477A
Other languages
Japanese (ja)
Inventor
Kazuchika Urita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5641477A priority Critical patent/JPS53142184A/en
Publication of JPS53142184A publication Critical patent/JPS53142184A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To reduce the switching time by providing plural piercing regions which protruding partially from the base region and pierces through the output-step emitter region to connect to the emitter electrode and then setting the sum of the resistance value of the current flowing through the piercing regions within the desired incorporated resistance value.
JP5641477A 1977-05-18 1977-05-18 Darlington transistor Pending JPS53142184A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5641477A JPS53142184A (en) 1977-05-18 1977-05-18 Darlington transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5641477A JPS53142184A (en) 1977-05-18 1977-05-18 Darlington transistor

Publications (1)

Publication Number Publication Date
JPS53142184A true JPS53142184A (en) 1978-12-11

Family

ID=13026469

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5641477A Pending JPS53142184A (en) 1977-05-18 1977-05-18 Darlington transistor

Country Status (1)

Country Link
JP (1) JPS53142184A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1985004285A1 (en) * 1984-03-16 1985-09-26 Motorola, Inc. Integrated bipolar-mos semiconductor device with common colle ctor and drain

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1985004285A1 (en) * 1984-03-16 1985-09-26 Motorola, Inc. Integrated bipolar-mos semiconductor device with common colle ctor and drain
US4783694A (en) * 1984-03-16 1988-11-08 Motorola Inc. Integrated bipolar-MOS semiconductor device with common collector and drain

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