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IT8423518A0 - SEMICONDUCTOR MEMORY DEVICE, IN PARTICULAR DYNAMIC RANDOM ACCESS MEMORY. - Google Patents

SEMICONDUCTOR MEMORY DEVICE, IN PARTICULAR DYNAMIC RANDOM ACCESS MEMORY.

Info

Publication number
IT8423518A0
IT8423518A0 IT8423518A IT2351884A IT8423518A0 IT 8423518 A0 IT8423518 A0 IT 8423518A0 IT 8423518 A IT8423518 A IT 8423518A IT 2351884 A IT2351884 A IT 2351884A IT 8423518 A0 IT8423518 A0 IT 8423518A0
Authority
IT
Italy
Prior art keywords
random access
dynamic random
particular dynamic
memory device
access memory
Prior art date
Application number
IT8423518A
Other languages
Italian (it)
Other versions
IT1209595B (en
Inventor
Mitsumasa Koyanagi
Shinji Shimizu
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP58210825A external-priority patent/JPS60103665A/en
Priority claimed from JP58216143A external-priority patent/JPH077823B2/en
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of IT8423518A0 publication Critical patent/IT8423518A0/en
Application granted granted Critical
Publication of IT1209595B publication Critical patent/IT1209595B/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
IT8423518A 1983-11-11 1984-11-09 SEMICONDUCTOR MEMORY DEVICE, IN PARTICULAR DYNAMIC RANDOM ACCESS. IT1209595B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP58210825A JPS60103665A (en) 1983-11-11 1983-11-11 Semiconductor ic device
JP58216143A JPH077823B2 (en) 1983-11-18 1983-11-18 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
IT8423518A0 true IT8423518A0 (en) 1984-11-09
IT1209595B IT1209595B (en) 1989-08-30

Family

ID=26518291

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8423518A IT1209595B (en) 1983-11-11 1984-11-09 SEMICONDUCTOR MEMORY DEVICE, IN PARTICULAR DYNAMIC RANDOM ACCESS.

Country Status (6)

Country Link
KR (1) KR850003612A (en)
DE (1) DE3441062A1 (en)
FR (1) FR2554954B1 (en)
GB (1) GB2150750B (en)
HK (1) HK40990A (en)
IT (1) IT1209595B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910007181B1 (en) * 1988-09-22 1991-09-19 현대전자산업 주식회사 Side-wall doped trench and stacked capacitor cell and method manufacturing thereof

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2553591C2 (en) * 1975-11-28 1977-11-17 Siemens AG, 1000 Berlin und 8000 München Memory matrix with one or more single-transistor memory elements
DE2728928A1 (en) * 1977-06-27 1979-01-18 Siemens Ag Integrated single transistor storage element - has storage capacitor consisting of two conducting layers separated by insulating layer
DE2728927C2 (en) * 1977-06-27 1984-06-28 Siemens AG, 1000 Berlin und 8000 München One-transistor storage element
JPS561559A (en) * 1979-06-19 1981-01-09 Fujitsu Ltd One-transistor type dynamic memory cell
JPS5623771A (en) * 1979-08-01 1981-03-06 Hitachi Ltd Semiconductor memory
JPS5643753A (en) * 1979-09-18 1981-04-22 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory storage
JPS583260A (en) * 1981-06-29 1983-01-10 Fujitsu Ltd Vertical embedded capacitor
JPS58137245A (en) * 1982-02-10 1983-08-15 Hitachi Ltd Semiconductor memory and its manufacture
JPS5982761A (en) * 1982-11-04 1984-05-12 Hitachi Ltd semiconductor memory
JPH0666436B2 (en) * 1983-04-15 1994-08-24 株式会社日立製作所 Semiconductor integrated circuit device

Also Published As

Publication number Publication date
GB2150750A (en) 1985-07-03
FR2554954B1 (en) 1989-05-12
DE3441062A1 (en) 1985-05-23
HK40990A (en) 1990-06-01
GB8424555D0 (en) 1984-11-07
IT1209595B (en) 1989-08-30
KR850003612A (en) 1985-06-20
GB2150750B (en) 1987-08-26
FR2554954A1 (en) 1985-05-17

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971126