FR2554954B1 - SEMICONDUCTOR MEMORY DEVICE - Google Patents

SEMICONDUCTOR MEMORY DEVICE

Info

Publication number: FR2554954B1
Authority: FR; France
Prior art keywords: memory device; semiconductor memory; semiconductor; memory
Prior art date: 1983-11-11
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

FR848413162A

Other languages

French (fr)

Other versions

FR2554954A1 (en

Inventor

Mitsumasa Koyanagi

Shinji Shimizu

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Hitachi Ltd

Original Assignee

Hitachi Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1983-11-11

Filing date

1984-08-24

Publication date

1989-05-12

1983-11-11 Priority claimed from JP58210825A external-priority patent/JPS60103665A/en

1983-11-18 Priority claimed from JP58216143A external-priority patent/JPH077823B2/en

1984-08-24 Application filed by Hitachi Ltd filed Critical Hitachi Ltd

1985-05-17 Publication of FR2554954A1 publication Critical patent/FR2554954A1/en

1989-05-12 Application granted granted Critical

1989-05-12 Publication of FR2554954B1 publication Critical patent/FR2554954B1/en

Status Expired legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Computer Hardware Design (AREA)
Semiconductor Memories (AREA)

FR848413162A 1983-11-11 1984-08-24 SEMICONDUCTOR MEMORY DEVICE Expired FR2554954B1 (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP58210825A JPS60103665A (en)	1983-11-11	1983-11-11	Semiconductor ic device
JP58216143A JPH077823B2 (en)	1983-11-18	1983-11-18	Semiconductor integrated circuit device

Publications (2)

Publication Number	Publication Date
FR2554954A1 FR2554954A1 (en)	1985-05-17
FR2554954B1 true FR2554954B1 (en)	1989-05-12

Family

ID=26518291

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
FR848413162A Expired FR2554954B1 (en)	1983-11-11	1984-08-24	SEMICONDUCTOR MEMORY DEVICE

Country Status (6)

Country	Link
KR (1)	KR850003612A (en)
DE (1)	DE3441062A1 (en)
FR (1)	FR2554954B1 (en)
GB (1)	GB2150750B (en)
HK (1)	HK40990A (en)
IT (1)	IT1209595B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR910007181B1 (en) *	1988-09-22	1991-09-19	현대전자산업 주식회사	Side-wall doped trench and stacked capacitor cell and method manufacturing thereof

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE2553591C2 (en) *	1975-11-28	1977-11-17	Siemens AG, 1000 Berlin und 8000 München	Memory matrix with one or more single-transistor memory elements
DE2728928A1 (en) *	1977-06-27	1979-01-18	Siemens Ag	Integrated single transistor storage element - has storage capacitor consisting of two conducting layers separated by insulating layer
DE2728927C2 (en) *	1977-06-27	1984-06-28	Siemens AG, 1000 Berlin und 8000 München	One-transistor storage element
JPS561559A (en) *	1979-06-19	1981-01-09	Fujitsu Ltd	One-transistor type dynamic memory cell
JPS5623771A (en) *	1979-08-01	1981-03-06	Hitachi Ltd	Semiconductor memory
JPS5643753A (en) *	1979-09-18	1981-04-22	Nippon Telegr & Teleph Corp <Ntt>	Semiconductor memory storage
JPS583260A (en) *	1981-06-29	1983-01-10	Fujitsu Ltd	Vertical embedded capacitor
JPS58137245A (en) *	1982-02-10	1983-08-15	Hitachi Ltd	Semiconductor memory and its manufacture
JPS5982761A (en) *	1982-11-04	1984-05-12	Hitachi Ltd	semiconductor memory
JPH0666436B2 (en) *	1983-04-15	1994-08-24	株式会社日立製作所	Semiconductor integrated circuit device

1984
- 1984-08-24 FR FR848413162A patent/FR2554954B1/en not_active Expired
- 1984-09-28 GB GB08424555A patent/GB2150750B/en not_active Expired
- 1984-11-03 KR KR1019840006906A patent/KR850003612A/en not_active Application Discontinuation
- 1984-11-09 DE DE19843441062 patent/DE3441062A1/en not_active Ceased
- 1984-11-09 IT IT8423518A patent/IT1209595B/en active
1990
- 1990-05-24 HK HK409/90A patent/HK40990A/en not_active IP Right Cessation

Also Published As

Publication number	Publication date
IT8423518A0 (en)	1984-11-09
GB2150750A (en)	1985-07-03
DE3441062A1 (en)	1985-05-23
HK40990A (en)	1990-06-01
GB8424555D0 (en)	1984-11-07
IT1209595B (en)	1989-08-30
KR850003612A (en)	1985-06-20
GB2150750B (en)	1987-08-26
FR2554954A1 (en)	1985-05-17

Publication	Publication Date	Title
FR2533738B1 (en)	1991-10-25	SEMICONDUCTOR MEMORY DEVICE
FR2506990B1 (en)	1989-04-28	SEMICONDUCTOR MEMORY DEVICE
FR2600453B1 (en)	1993-12-03	SEMICONDUCTOR MEMORY DEVICE
FR2640796B1 (en)	1994-09-23	SEMICONDUCTOR MEMORY DEVICE
FR2521761B1 (en)	1990-12-28	SEMICONDUCTOR MEMORY
FR2506057B1 (en)	1986-12-19	SEMICONDUCTOR MEMORY
FR2528613B1 (en)	1991-09-20	SEMICONDUCTOR MEMORY
FR2551904B1 (en)	1992-06-19	SEMICONDUCTOR MEMORY DEVICE
FR2474721B1 (en)	1987-09-11	MEMORY MEMORY DEVICE
EP0030245A4 (en)	1982-01-08	SEMICONDUCTOR MEMORY DEVICE.
EP0040251A4 (en)	1984-08-10	SEMICONDUCTOR MEMORY DEVICE.
EP0116464A3 (en)	1987-06-03	A semiconductor memory device
FR2578085B1 (en)	1992-10-30	SEMICONDUCTOR MEMORY DEVICE
FR2583202B1 (en)	1991-09-27	SEMICONDUCTOR MEMORY DEVICE
DE3883865D1 (en)	1993-10-14	Semiconductor memory device with a register.
FR2533348B1 (en)	1991-10-31	SEMICONDUCTOR MEMORY DEVICE
EP0136170A3 (en)	1986-12-30	A semiconductor memory device
FR2528213B1 (en)	1987-12-18	MAGNETIC DISC MEMORY DEVICE
ES535060A0 (en)	1986-04-01	A MEMORY PAGE DEVICE ON A MICROCOMPUTER
DE3486418D1 (en)	1996-02-08	Semiconductor memory device
FR2520910B1 (en)	1987-07-10	VIDEO MEMORY DEVICE
FR2533739B1 (en)	1991-06-07	SEMICONDUCTOR MEMORY
FR2553211B1 (en)	1986-01-17	COINING DEVICE
MX154938A (en)	1988-01-08	IMPROVEMENTS IN A SEMICONDUCTOR DEVICE
EP0139385A3 (en)	1986-10-22	A semiconductor memory device

Legal Events

Date	Code	Title	Description
2000-07-28	ST	Notification of lapse