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IT8406620A0 - Dispositivo integrato monolitico di potenza e semiconduttore - Google Patents

Dispositivo integrato monolitico di potenza e semiconduttore

Info

Publication number
IT8406620A0
IT8406620A0 IT8406620A IT662084A IT8406620A0 IT 8406620 A0 IT8406620 A0 IT 8406620A0 IT 8406620 A IT8406620 A IT 8406620A IT 662084 A IT662084 A IT 662084A IT 8406620 A0 IT8406620 A0 IT 8406620A0
Authority
IT
Italy
Prior art keywords
semiconductor device
integrated power
monolithic integrated
monolithic
power
Prior art date
Application number
IT8406620A
Other languages
English (en)
Other versions
IT1214806B (it
Inventor
Bertotti Franco
Ferla Giuseppe
Musumeci Salvatore
Raciti Salvatore
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Priority to IT8406620A priority Critical patent/IT1214806B/it
Publication of IT8406620A0 publication Critical patent/IT8406620A0/it
Priority to FR8513746A priority patent/FR2570878B1/fr
Priority to US06/776,961 priority patent/US4641171A/en
Priority to DE3533478A priority patent/DE3533478C2/de
Priority to GB08523264A priority patent/GB2168842B/en
Priority to JP60207804A priority patent/JPH0732196B2/ja
Application granted granted Critical
Publication of IT1214806B publication Critical patent/IT1214806B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
IT8406620A 1984-09-21 1984-09-21 Dispositivo integrato monolitico di potenza e semiconduttore IT1214806B (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IT8406620A IT1214806B (it) 1984-09-21 1984-09-21 Dispositivo integrato monolitico di potenza e semiconduttore
FR8513746A FR2570878B1 (fr) 1984-09-21 1985-09-17 Dispositif integre monolithique de puissance a semi-conducteur
US06/776,961 US4641171A (en) 1984-09-21 1985-09-17 Monolithically integrated semiconductor power device
DE3533478A DE3533478C2 (de) 1984-09-21 1985-09-19 Monolithisch integrierte Halbleiter-Leistungsvorrichtung
GB08523264A GB2168842B (en) 1984-09-21 1985-09-20 Integrated semiconductor power devices
JP60207804A JPH0732196B2 (ja) 1984-09-21 1985-09-21 モノリシツク集積電力半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8406620A IT1214806B (it) 1984-09-21 1984-09-21 Dispositivo integrato monolitico di potenza e semiconduttore

Publications (2)

Publication Number Publication Date
IT8406620A0 true IT8406620A0 (it) 1984-09-21
IT1214806B IT1214806B (it) 1990-01-18

Family

ID=11121520

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8406620A IT1214806B (it) 1984-09-21 1984-09-21 Dispositivo integrato monolitico di potenza e semiconduttore

Country Status (6)

Country Link
US (1) US4641171A (it)
JP (1) JPH0732196B2 (it)
DE (1) DE3533478C2 (it)
FR (1) FR2570878B1 (it)
GB (1) GB2168842B (it)
IT (1) IT1214806B (it)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1188465B (it) * 1986-03-27 1988-01-14 Sgs Microelettronica Spa Rpocedimento per la fabbricazione di circuiti integrati a semiconduttore includenti dispositiv cmos e dispositivi elettronici ad alta tensione
IT1215024B (it) * 1986-10-01 1990-01-31 Sgs Microelettronica Spa Processo per la formazione di un dispositivo monolitico a semiconduttore di alta tensione
DE3856174T2 (de) * 1987-10-27 1998-09-03 Nippon Electric Co Halbleiteranordnung mit einem isolierten vertikalen Leistungs-MOSFET.
IT1232930B (it) * 1987-10-30 1992-03-10 Sgs Microelettronica Spa Struttura integrata a componenti attivi e passivi inclusi in sacche di isolamento operante a tensione maggiore della tensione di rottura tra ciascun componente e la sacca che lo contiene
USRE38510E1 (en) * 1987-12-22 2004-05-04 Stmicroelectronics Srl Manufacturing process for a monolithic semiconductor device comprising at least one transistor of an integrated control circuit and one power transistor integrated on the same chip
IT1217322B (it) * 1987-12-22 1990-03-22 Sgs Microelettronica Spa Procedimento di fabbricazione di un dispositivo nonolitico a semiconduttope comprendente almeno un transistor di un circuito integrato di comando e un transistor di rotenza in tegrato nella stessa piastrina
US5156989A (en) * 1988-11-08 1992-10-20 Siliconix, Incorporated Complementary, isolated DMOS IC technology
IT1228900B (it) * 1989-02-27 1991-07-09 Sgs Thomson Microelectronics Struttura integrata monolitica per sistema di pilotaggio a due stadi con componente circuitale traslatore di livello del segnale di pilotaggio per transistori di potenza.
JP2835116B2 (ja) * 1989-09-29 1998-12-14 株式会社東芝 電力用ｉｃおよびその製造方法
IT1236797B (it) * 1989-11-17 1993-04-02 St Microelectronics Srl Dispositivo monolitico di potenza a semiconduttore di tipo verticale con una protezione contro le correnti parassite.
IT1241050B (it) * 1990-04-20 1993-12-29 Cons Ric Microelettronica Processo di formazione di una regione sepolta di drain o di collettore in dispositivi monolitici a semiconduttore.
JP3190057B2 (ja) * 1990-07-02 2001-07-16 株式会社東芝 複合集積回路装置
KR0127282B1 (ko) * 1992-05-18 1998-04-02 도요다 요시또시 반도체 장치
US5610079A (en) * 1995-06-19 1997-03-11 Reliance Electric Industrial Company Self-biased moat for parasitic current suppression in integrated circuits
DE19548060A1 (de) * 1995-12-21 1997-06-26 Siemens Ag Durch Feldeffekt steuerbares Leistungs-Halbleiterbauelement mit Temperatursensor
JP4775684B2 (ja) * 2003-09-29 2011-09-21 オンセミコンダクター・トレーディング・リミテッド 半導体集積回路装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US969010A (en) * 1907-11-12 1910-08-30 Liberty Mfg Company Rotary motor.
GB1263817A (en) * 1969-11-10 1972-02-16 Marconi Co Ltd Improvements in or relating to integrated circuits
JPS51115782A (en) * 1975-04-04 1976-10-12 Hitachi Ltd Semiconductor apparatus
DE2610122C3 (de) * 1976-03-11 1978-11-09 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Dreipolige Halbleiteranordnung
FR2408914A1 (fr) * 1977-11-14 1979-06-08 Radiotechnique Compelec Dispositif semi-conducteur monolithique comprenant deux transistors complementaires et son procede de fabrication
GB2023340B (en) * 1978-06-01 1982-09-02 Mitsubishi Electric Corp Integrated circuits
IT1202895B (it) * 1979-02-27 1989-02-15 Ates Componenti Elettron Dispositivo di protezione termica per un componente elettronico a semiconduttore
DE2945273A1 (de) * 1979-11-09 1981-05-21 Robert Bosch Gmbh, 7000 Stuttgart Darligton-transistorschaltung
US4564771A (en) * 1982-07-17 1986-01-14 Robert Bosch Gmbh Integrated Darlington transistor combination including auxiliary transistor and Zener diode

Also Published As

Publication number Publication date
FR2570878B1 (fr) 1988-07-29
FR2570878A1 (fr) 1986-03-28
US4641171A (en) 1987-02-03
DE3533478A1 (de) 1986-04-10
GB2168842A (en) 1986-06-25
GB2168842B (en) 1988-03-09
IT1214806B (it) 1990-01-18
DE3533478C2 (de) 1995-08-17
JPH0732196B2 (ja) 1995-04-10
JPS61117860A (ja) 1986-06-05
GB8523264D0 (en) 1985-10-23

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970929