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IT8123007A0 - MOLD AND PROCEDURE FOR THE CASTING OF SILICON INGOTS SUITABLE FOR BEING USED AS MATERIAL FOR SOLAR CELLS. - Google Patents

MOLD AND PROCEDURE FOR THE CASTING OF SILICON INGOTS SUITABLE FOR BEING USED AS MATERIAL FOR SOLAR CELLS.

Info

Publication number
IT8123007A0
IT8123007A0 IT8123007A IT2300781A IT8123007A0 IT 8123007 A0 IT8123007 A0 IT 8123007A0 IT 8123007 A IT8123007 A IT 8123007A IT 2300781 A IT2300781 A IT 2300781A IT 8123007 A0 IT8123007 A0 IT 8123007A0
Authority
IT
Italy
Prior art keywords
casting
mold
procedure
solar cells
silicon ingots
Prior art date
Application number
IT8123007A
Other languages
Italian (it)
Other versions
IT1137729B (en
Inventor
Sergio Pizzini
Massimo Gasparini
Massimo Rustioni
Original Assignee
Heliosil S P A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heliosil S P A filed Critical Heliosil S P A
Priority to IT23007/81A priority Critical patent/IT1137729B/en
Publication of IT8123007A0 publication Critical patent/IT8123007A0/en
Priority to DE19823226440 priority patent/DE3226440A1/en
Priority to FR8212588A priority patent/FR2509638A1/en
Priority to BE0/208639A priority patent/BE893894A/en
Application granted granted Critical
Publication of IT1137729B publication Critical patent/IT1137729B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
IT23007/81A 1981-07-20 1981-07-20 MOLD AND PROCEDURE FOR THE MELTING OF SILICON TABS SUITABLE FOR USE AS SOLAR CELL MATERIAL IT1137729B (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT23007/81A IT1137729B (en) 1981-07-20 1981-07-20 MOLD AND PROCEDURE FOR THE MELTING OF SILICON TABS SUITABLE FOR USE AS SOLAR CELL MATERIAL
DE19823226440 DE3226440A1 (en) 1981-07-20 1982-07-15 Casting mould and process for casting silicon bars which can be used as material for solar cells
FR8212588A FR2509638A1 (en) 1981-07-20 1982-07-19 MOLD AND METHOD FOR MOLDING SILICON INGOTS FOR USE AS MATERIAL FOR MAKING SOLAR CELLS
BE0/208639A BE893894A (en) 1981-07-20 1982-07-20 MOLD AND METHOD FOR MOLDING SILICON INGOTS FOR USE AS MATERIAL FOR MAKING SOLAR CELLS

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT23007/81A IT1137729B (en) 1981-07-20 1981-07-20 MOLD AND PROCEDURE FOR THE MELTING OF SILICON TABS SUITABLE FOR USE AS SOLAR CELL MATERIAL

Publications (2)

Publication Number Publication Date
IT8123007A0 true IT8123007A0 (en) 1981-07-20
IT1137729B IT1137729B (en) 1986-09-10

Family

ID=11202800

Family Applications (1)

Application Number Title Priority Date Filing Date
IT23007/81A IT1137729B (en) 1981-07-20 1981-07-20 MOLD AND PROCEDURE FOR THE MELTING OF SILICON TABS SUITABLE FOR USE AS SOLAR CELL MATERIAL

Country Status (4)

Country Link
BE (1) BE893894A (en)
DE (1) DE3226440A1 (en)
FR (1) FR2509638A1 (en)
IT (1) IT1137729B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3520957B2 (en) * 1997-06-23 2004-04-19 シャープ株式会社 Method and apparatus for manufacturing polycrystalline semiconductor ingot
FR2853913B1 (en) 2003-04-17 2006-09-29 Apollon Solar CUTTER FOR A DEVICE FOR MANUFACTURING A BLOCK OF CRYSTALLINE MATERIAL AND METHOD OF MANUFACTURE
DE102005024957A1 (en) * 2005-05-31 2006-12-07 Saint-Gobain Industriekeramik Rödental GmbH Multi-part, thin-walled crucible with insert of quartz glass fabric or quartz glass felt for cooling of Si melts
US8562740B2 (en) * 2010-11-17 2013-10-22 Silicor Materials Inc. Apparatus for directional solidification of silicon including a refractory material
EP2589687A1 (en) * 2011-11-04 2013-05-08 Vesuvius France (S.A.) Crucible and method for the production of a (near ) monocrystalline semiconductor ingot

Also Published As

Publication number Publication date
DE3226440A1 (en) 1983-02-03
BE893894A (en) 1982-11-16
FR2509638A1 (en) 1983-01-21
FR2509638B3 (en) 1984-08-10
IT1137729B (en) 1986-09-10

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