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IT8019822A0 - Laser a semiconduttori e metodo di fabbricazione dello stesso. - Google Patents

Laser a semiconduttori e metodo di fabbricazione dello stesso.

Info

Publication number
IT8019822A0
IT8019822A0 IT8019822A IT1982280A IT8019822A0 IT 8019822 A0 IT8019822 A0 IT 8019822A0 IT 8019822 A IT8019822 A IT 8019822A IT 1982280 A IT1982280 A IT 1982280A IT 8019822 A0 IT8019822 A0 IT 8019822A0
Authority
IT
Italy
Prior art keywords
manufacturing
semiconductor lasers
lasers
semiconductor
Prior art date
Application number
IT8019822A
Other languages
English (en)
Other versions
IT1140545B (it
Inventor
De Waard Peter Jan
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of IT8019822A0 publication Critical patent/IT8019822A0/it
Application granted granted Critical
Publication of IT1140545B publication Critical patent/IT1140545B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/163—Single longitudinal mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18375—Structure of the reflectors, e.g. hybrid mirrors based on metal reflectors

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Weting (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
IT19822/80A 1979-02-13 1980-02-08 Laser a semiconduttori e metodo di fabbricazione dello stesso IT1140545B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7901122A NL7901122A (nl) 1979-02-13 1979-02-13 Halfgeleiderlaser en werkwijze ter vervaardiging daarvan.

Publications (2)

Publication Number Publication Date
IT8019822A0 true IT8019822A0 (it) 1980-02-08
IT1140545B IT1140545B (it) 1986-10-01

Family

ID=19832631

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19822/80A IT1140545B (it) 1979-02-13 1980-02-08 Laser a semiconduttori e metodo di fabbricazione dello stesso

Country Status (8)

Country Link
JP (1) JPS55111192A (it)
AU (1) AU5537180A (it)
DE (1) DE3003667A1 (it)
FR (1) FR2449348A1 (it)
GB (1) GB2040552A (it)
IT (1) IT1140545B (it)
NL (1) NL7901122A (it)
SE (1) SE8001054L (it)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58215087A (ja) * 1982-06-07 1983-12-14 Tokyo Inst Of Technol 面発光形レ−ザ素子の製造方法
JPS5967677A (ja) * 1982-07-01 1984-04-17 Semiconductor Res Found 光集積回路
NL8300631A (nl) * 1983-02-21 1984-09-17 Philips Nv Inrichting voor het opwekken van coherente straling.
JPS60100489A (ja) * 1983-08-02 1985-06-04 Furukawa Electric Co Ltd:The 半導体レ−ザ
FR2575870B1 (fr) * 1985-01-10 1987-01-30 Sermage Bernard Laser a semi-conducteur muni de moyens de reinjection de l'emission spontanee dans la couche active
JPS6242532A (ja) * 1985-08-20 1987-02-24 Matsushita Electric Ind Co Ltd 化合物半導体の表面処理方法
NL8602653A (nl) * 1986-10-23 1988-05-16 Philips Nv Halfgeleiderlaser en werkwijze ter vervaardiging daarvan.
DE3728568A1 (de) * 1987-08-27 1989-03-16 Telefunken Electronic Gmbh Halbleiterlaseranordnung
JPH04199589A (ja) * 1990-11-28 1992-07-20 Mitsubishi Electric Corp 可視光面発光レーザ装置

Also Published As

Publication number Publication date
AU5537180A (en) 1980-08-21
JPS55111192A (en) 1980-08-27
DE3003667A1 (de) 1980-08-21
FR2449348A1 (fr) 1980-09-12
GB2040552A (en) 1980-08-28
IT1140545B (it) 1986-10-01
SE8001054L (sv) 1980-08-14
NL7901122A (nl) 1980-08-15

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