DE3575501D1 - Halbleiterlaser. - Google Patents

Halbleiterlaser.

Info

Publication number: DE3575501D1
Authority: DE; Germany
Prior art keywords: semiconductor laser; laser; semiconductor
Prior art date: 1984-03-13
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE8585301613T

Other languages

English (en)

Inventor

Yutaka Mihashi

Yutaka Nagai

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Mitsubishi Electric Corp

Original Assignee

Mitsubishi Electric Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1984-03-13

Filing date

1985-03-08

Publication date

1990-02-22

1985-03-08 Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp

1990-02-22 Application granted granted Critical

1990-02-22 Publication of DE3575501D1 publication Critical patent/DE3575501D1/de

2005-03-09 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2237—Buried stripe structure with a non-planar active layer

Landscapes

Physics & Mathematics (AREA)
Geometry (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Electromagnetism (AREA)
Optics & Photonics (AREA)
Semiconductor Lasers (AREA)

DE8585301613T 1984-03-13 1985-03-08 Halbleiterlaser. Expired - Lifetime DE3575501D1 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP59049734A JPS60192380A (ja)	1984-03-13	1984-03-13	半導体レ−ザ装置

Publications (1)

Publication Number	Publication Date
DE3575501D1 true DE3575501D1 (de)	1990-02-22

Family

ID=12839417

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE8585301613T Expired - Lifetime DE3575501D1 (de)	1984-03-13	1985-03-08	Halbleiterlaser.

Country Status (4)

Country	Link
US (2)	US4667332A (de)
EP (1)	EP0155152B1 (de)
JP (1)	JPS60192380A (de)
DE (1)	DE3575501D1 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4783425A (en) *	1985-11-06	1988-11-08	Hitachi, Ltd.	Fabrication process of semiconductor lasers
JPS62281488A (ja) *	1986-05-30	1987-12-07	Nec Corp	半導体レ−ザ
JPS6373688A (ja) *	1986-09-17	1988-04-04	Mitsubishi Electric Corp	半導体発光装置
JPS6373685A (ja) *	1986-09-17	1988-04-04	Mitsubishi Electric Corp	半導体レ−ザアレイおよびその製造方法
US4788159A (en) *	1986-09-18	1988-11-29	Eastman Kodak Company	Process for forming a positive index waveguide
JPH0821755B2 (ja) *	1986-10-07	1996-03-04	ソニー株式会社	半導体レーザの製造方法
JPS63140591A (ja) *	1986-12-02	1988-06-13	Mitsubishi Electric Corp	半導体レ−ザ装置の製造方法
JPS63166285A (ja) *	1986-12-26	1988-07-09	Toshiba Corp	半導体発光装置の製造方法
JP2553580B2 (ja) *	1987-08-19	1996-11-13	三菱電機株式会社	半導体レ−ザ装置
DE68909632T2 (de) *	1988-02-09	1994-03-10	Toshiba Kawasaki Kk	Halbleiterlaser-Vorrichtung und deren Herstellungsverfahren.
JPH01235397A (ja) *	1988-03-16	1989-09-20	Mitsubishi Electric Corp	半導体レーザ
JPH01293690A (ja) *	1988-05-23	1989-11-27	Mitsubishi Electric Corp	半導体レーザ
JPH0231487A (ja) *	1988-07-20	1990-02-01	Mitsubishi Electric Corp	半導体レーザ装置とその製造方法
JPH02253682A (ja) *	1989-03-27	1990-10-12	Mitsubishi Electric Corp	半導体レーザ
JPH0719931B2 (ja) *	1989-04-06	1995-03-06	三菱電機株式会社	半導体レーザ装置およびその製造方法
JPH03127891A (ja) *	1989-10-13	1991-05-30	Mitsubishi Electric Corp	半導体レーザ装置
US5038356A (en) *	1989-12-04	1991-08-06	Trw Inc.	Vertical-cavity surface-emitting diode laser
US5058120A (en) *	1990-02-28	1991-10-15	Kabushiki Kaisha Toshiba	Visible light emitting semiconductor laser with inverse mesa-shaped groove section
EP0695006B1 (de) *	1990-05-09	1998-03-04	Sharp Kabushiki Kaisha	Herstellungsverfahren für eine aus Halbleiterverbindungen bestehende Laservorrichtung
JPH06302908A (ja) *	1993-04-15	1994-10-28	Fujitsu Ltd	半導体レーザ
JPH0750445A (ja) *	1993-06-02	1995-02-21	Rohm Co Ltd	半導体レーザの製法
US5889913A (en) *	1995-03-15	1999-03-30	Kabushiki Kaisha Toshiba	Optical semiconductor device and method of fabricating the same
US7233088B2 (en) *	2003-01-17	2007-06-19	Magnetic Torque International, Ltd.	Torque converter and system using the same
US7268454B2 (en) *	2003-01-17	2007-09-11	Magnetic Torque International, Ltd.	Power generating systems
US20060111191A1 (en) *	2004-11-19	2006-05-25	Magnetic Torque International	Torque transfer system and method of using the same

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5541741A (en) *	1978-09-20	1980-03-24	Hitachi Ltd	Semiconductor laser device
CA1137605A (en) *	1979-01-15	1982-12-14	Donald R. Scifres	High output power laser
JPS5640292A (en) *	1979-09-11	1981-04-16	Fujitsu Ltd	Semiconductor laser
US4366568A (en) *	1979-12-20	1982-12-28	Matsushita Electric Industrial Co. Ltd.	Semiconductor laser
JPS56164590A (en) *	1980-05-23	1981-12-17	Kokusai Denshin Denwa Co Ltd <Kdd>	Semiconductor laser
JPS5710992A (en) *	1980-06-24	1982-01-20	Sumitomo Electric Ind Ltd	Semiconductor device and manufacture therefor
JPS5723292A (en) *	1980-07-16	1982-02-06	Sony Corp	Semiconductor laser device and manufacture thereof
GB2105099B (en) *	1981-07-02	1985-06-12	Standard Telephones Cables Ltd	Injection laser
US4613387A (en) *	1983-02-28	1986-09-23	Itt Industries Inc.	Injection laser manufacture
JPS6031288A (ja) *	1983-07-29	1985-02-18	Sharp Corp	半導体レ−ザ素子
JPS6080292A (ja) *	1983-10-07	1985-05-08	Matsushita Electric Ind Co Ltd	半導体レ−ザ
JPS60110188A (ja) *	1983-11-18	1985-06-15	Sharp Corp	半導体レ−ザ素子
JPS60150682A (ja) *	1984-01-17	1985-08-08	Sharp Corp	半導体レ−ザ素子
US4660208A (en) *	1984-06-15	1987-04-21	American Telephone And Telegraph Company, At&T Bell Laboratories	Semiconductor devices employing Fe-doped MOCVD InP-based layer for current confinement
JPS6184827A (ja) *	1984-10-02	1986-04-30	Sharp Corp	半導体装置の製造方法
US4647320A (en) *	1985-05-22	1987-03-03	Trw Inc.	Method of making a surface emitting light emitting diode

1984
- 1984-03-13 JP JP59049734A patent/JPS60192380A/ja active Pending
1985
- 1985-02-08 US US06/700,017 patent/US4667332A/en not_active Expired - Fee Related
- 1985-03-08 EP EP85301613A patent/EP0155152B1/de not_active Expired
- 1985-03-08 DE DE8585301613T patent/DE3575501D1/de not_active Expired - Lifetime
1987
- 1987-03-23 US US07/029,190 patent/US4734385A/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
EP0155152A2 (de)	1985-09-18
US4667332A (en)	1987-05-19
EP0155152A3 (en)	1987-04-15
JPS60192380A (ja)	1985-09-30
US4734385A (en)	1988-03-29
EP0155152B1 (de)	1990-01-17

Publication	Publication Date	Title
DE3584702D1 (de)	1992-01-02	Halbleiterlaservorrichtung.
DE3584330D1 (de)	1991-11-14	Halbleiterlaservorrichtung.
DE3676867D1 (de)	1991-02-21	Halbleiterlaser.
DE3751535D1 (de)	1995-10-26	Halbleiterlaser.
DE3481957D1 (de)	1990-05-17	Halbleiteranordnung.
DE3583302D1 (de)	1991-08-01	Halbleiteranordnung.
DE3587748D1 (de)	1994-03-24	Halbleiterlaseranordnung.
DE3583010D1 (de)	1991-07-04	Halbleiterphotodetektor.
DE3575501D1 (de)	1990-02-22	Halbleiterlaser.
DE3873689D1 (de)	1992-09-17	Halbleiterlaser.
DE3579991D1 (de)	1990-11-08	Halbleiterlaser.
DE3674959D1 (de)	1990-11-22	Halbleiterlaser.
DE3582653D1 (de)	1991-05-29	Halbleiteranordnung.
DE3483450D1 (de)	1990-11-29	Halbleiterlaser.
DE3884503D1 (de)	1993-11-04	Halbleiterlaser.
DE3688002D1 (de)	1993-04-22	Halbleiter-laser.
DE3687102D1 (de)	1992-12-17	Halbleiterlaser.
DE3586934D1 (de)	1993-02-11	Halbleiterlaser.
DE3778510D1 (de)	1992-05-27	Halbleiterlaser.
DE3581557D1 (de)	1991-03-07	Halbleiterlaser.
DE3579826D1 (de)	1990-10-31	Halbleiterlaser.
DE3668099D1 (de)	1990-02-08	Laserhalbleiteranordnung.
DE3575243D1 (de)	1990-02-08	Halbleiterlaser.
DE3581076D1 (de)	1991-02-07	Halbleiterlaser-vorrichtungen.
DE3678471D1 (de)	1991-05-08	Halbleiterlaser.

Legal Events

Date	Code	Title
1991-02-07	8364	No opposition during term of opposition
1996-02-01	8320	Willingness to grant licences declared (paragraph 23)
1997-03-13	8339	Ceased/non-payment of the annual fee