IT1392068B1 - Camera di reazione di un reattore epitassiale - Google Patents

Camera di reazione di un reattore epitassiale

Info

Publication number: IT1392068B1
Authority: IT; Italy
Prior art keywords: reaction chamber; epitaxial reactor; epitaxial; reactor; chamber
Prior art date: 2008-11-24

Application number

ITMI2008A002092A

Other languages

English (en)

Inventor

Franco Preti

Original Assignee

Lpe Spa

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2008-11-24

Filing date

2008-11-24

Publication date

2012-02-09

Family has litigation

First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=41112787&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=IT1392068(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.

2008-11-24 Application filed by Lpe Spa filed Critical Lpe Spa

2008-11-24 Priority to ITMI2008A002092A priority Critical patent/IT1392068B1/it

2009-11-20 Priority to US13/131,011 priority patent/US20110229378A1/en

2009-11-20 Priority to JP2011536963A priority patent/JP5600324B2/ja

2009-11-20 Priority to CN200980146751.1A priority patent/CN102224277B/zh

2009-11-20 Priority to EP09798951.1A priority patent/EP2367964B1/en

2009-11-20 Priority to PCT/IB2009/007505 priority patent/WO2010058269A1/en

2010-05-25 Publication of ITMI20082092A1 publication Critical patent/ITMI20082092A1/it

2012-02-09 Application granted granted Critical

2012-02-09 Publication of IT1392068B1 publication Critical patent/IT1392068B1/it

Classifications

- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate

Landscapes

Chemical & Material Sciences (AREA)
General Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
Engineering & Computer Science (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Health & Medical Sciences (AREA)
Toxicology (AREA)
Chemical Vapour Deposition (AREA)

ITMI2008A002092A 2008-11-24 2008-11-24 Camera di reazione di un reattore epitassiale IT1392068B1 (it)

Priority Applications (6)

Application Number	Priority Date	Filing Date	Title
ITMI2008A002092A IT1392068B1 (it)	2008-11-24	2008-11-24	Camera di reazione di un reattore epitassiale
US13/131,011 US20110229378A1 (en)	2008-11-24	2009-11-20	Reaction Chamber of an Epitaxial Reactor
JP2011536963A JP5600324B2 (ja)	2008-11-24	2009-11-20	エピタキシャル反応器の反応室
CN200980146751.1A CN102224277B (zh)	2008-11-24	2009-11-20	外延反应器的反应室
EP09798951.1A EP2367964B1 (en)	2008-11-24	2009-11-20	Reaction chamber of an epitaxial reactor
PCT/IB2009/007505 WO2010058269A1 (en)	2008-11-24	2009-11-20	Reaction chamber of an epitaxial reactor

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
ITMI2008A002092A IT1392068B1 (it)	2008-11-24	2008-11-24	Camera di reazione di un reattore epitassiale

Publications (2)

Publication Number	Publication Date
ITMI20082092A1 ITMI20082092A1 (it)	2010-05-25
IT1392068B1 true IT1392068B1 (it)	2012-02-09

Family

ID=41112787

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
ITMI2008A002092A IT1392068B1 (it)	2008-11-24	2008-11-24	Camera di reazione di un reattore epitassiale

Country Status (6)

Country	Link
US (1)	US20110229378A1 (it)
EP (1)	EP2367964B1 (it)
JP (1)	JP5600324B2 (it)
CN (1)	CN102224277B (it)
IT (1)	IT1392068B1 (it)
WO (1)	WO2010058269A1 (it)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN108411362B (zh) *	2017-02-09	2020-03-31	北京北方华创微电子装备有限公司	腔室及外延生长设备
IT201900000223A1 (it) *	2019-01-09	2020-07-09	Lpe Spa	Camera di reazione con elemento rotante e reattore per deposizione di materiale semiconduttore

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS6097622A (ja) *	1983-11-01	1985-05-31	Toshiba Mach Co Ltd	エピタキシヤル装置
DE3485898D1 (de) *	1983-12-09	1992-10-01	Applied Materials Inc	Induktiv beheitzter reaktor zur chemischen abscheidung aus der dampfphase.
US4579080A (en) *	1983-12-09	1986-04-01	Applied Materials, Inc.	Induction heated reactor system for chemical vapor deposition
IT1209570B (it) *	1984-07-19	1989-08-30	Lpe Spa	Perfezionamento nei reattori epitassiali.
US5259883A (en) *	1988-02-16	1993-11-09	Kabushiki Kaisha Toshiba	Method of thermally processing semiconductor wafers and an apparatus therefor
DE69128080T2 (de) *	1990-05-18	1998-02-26	Hitco Technologies Inc., Gardena, Calif.	Werkstoffe für cdv-verfahren
DE4338807C1 (de)	1993-11-12	1995-01-26	Heraeus Quarzglas	Formkörper mit hohem Gehalt an Siliziumdioxid und Verfahren zur Herstellung solcher Formkörper
CN1188823A (zh) *	1996-11-04	1998-07-29	通用电气公司	半导体圆片的热处理器
CN1067446C (zh) *	1998-12-25	2001-06-20	清华大学	超高真空化学气相淀积外延系统
US6342691B1 (en) *	1999-11-12	2002-01-29	Mattson Technology, Inc.	Apparatus and method for thermal processing of semiconductor substrates
US6666924B1 (en) *	2000-03-28	2003-12-23	Asm America	Reaction chamber with decreased wall deposition
JP4374156B2 (ja) *	2000-09-01	2009-12-02	日本碍子株式会社	Ｉｉｉ−ｖ族窒化物膜の製造装置及び製造方法
WO2002072343A1 (fr) *	2001-03-08	2002-09-19	Shin-Etsu Handotai Co., Ltd.	Materiau reflechissant la chaleur et dispositif de rechauffement utilisant ce materiau
KR20020080954A (ko) *	2001-04-18	2002-10-26	주성엔지니어링(주)	냉벽 화학기상증착 방법 및 장치
US7563512B2 (en) *	2004-08-23	2009-07-21	Heraeus Quarzglas Gmbh & Co. Kg	Component with a reflector layer and method for producing the same
ITMI20041677A1 (it) *	2004-08-30	2004-11-30	E T C Epitaxial Technology Ct	Processo di pulitura e processo operativo per un reattore cvd.
US20070295275A1 (en) *	2004-10-01	2007-12-27	Vincenzo Ogliari	Epitaxial Reactor Cooling Method and Reactor Cooled Thereby
ITMI20051308A1 (it) *	2005-07-11	2007-01-12	Milano Politecnico	Metodo e reattore per crescere cristalli
JP5117856B2 (ja) *	2005-08-05	2013-01-16	株式会社日立国際電気	基板処理装置、冷却ガス供給ノズルおよび半導体装置の製造方法
JP4994724B2 (ja) *	2006-07-07	2012-08-08	株式会社東芝	成膜装置及び成膜方法
DE102006046619A1 (de) *	2006-09-29	2008-04-03	Heraeus Quarzglas Gmbh & Co. Kg	Streichfähiger SiO2-Schlicker für die Herstellung von Quarzglas, Verfahren zur Herstellung von Quarzglas unter Einsatz des Schlickers
DE102006052512A1 (de) *	2006-11-06	2008-05-08	Heraeus Quarzglas Gmbh & Co. Kg	Verfahren zur Herstellung von opakem Quarzglas, nach dem Verfahren erhaltenes Halbzeug sowie daraus hergestelltes Bauteil
JP5043776B2 (ja) *	2008-08-08	2012-10-10	株式会社日立国際電気	基板処理装置及び半導体装置の製造方法

2008
- 2008-11-24 IT ITMI2008A002092A patent/IT1392068B1/it active
2009
- 2009-11-20 CN CN200980146751.1A patent/CN102224277B/zh active Active
- 2009-11-20 EP EP09798951.1A patent/EP2367964B1/en not_active Revoked
- 2009-11-20 JP JP2011536963A patent/JP5600324B2/ja active Active
- 2009-11-20 US US13/131,011 patent/US20110229378A1/en not_active Abandoned
- 2009-11-20 WO PCT/IB2009/007505 patent/WO2010058269A1/en active Application Filing

Also Published As

Publication number	Publication date
EP2367964A1 (en)	2011-09-28
JP2012510151A (ja)	2012-04-26
EP2367964B1 (en)	2014-04-30
CN102224277A (zh)	2011-10-19
WO2010058269A1 (en)	2010-05-27
JP5600324B2 (ja)	2014-10-01
CN102224277B (zh)	2014-03-12
ITMI20082092A1 (it)	2010-05-25
US20110229378A1 (en)	2011-09-22

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