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IT1313384B1 - Schema di polarizzazione in modo corrente ad alta precisione e minimorumore per un transistore bipolare a giunzione con degenerazione ut - Google Patents

Schema di polarizzazione in modo corrente ad alta precisione e minimorumore per un transistore bipolare a giunzione con degenerazione ut

Info

Publication number
IT1313384B1
IT1313384B1 IT1999VA000010A ITVA990010A IT1313384B1 IT 1313384 B1 IT1313384 B1 IT 1313384B1 IT 1999VA000010 A IT1999VA000010 A IT 1999VA000010A IT VA990010 A ITVA990010 A IT VA990010A IT 1313384 B1 IT1313384 B1 IT 1313384B1
Authority
IT
Italy
Prior art keywords
degeneration
high precision
low noise
bipolar junction
junction transistor
Prior art date
Application number
IT1999VA000010A
Other languages
English (en)
Inventor
Giuseppe Gramegna
Antonio Magazzu
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT1999VA000010A priority Critical patent/IT1313384B1/it
Publication of ITVA990010A0 publication Critical patent/ITVA990010A0/it
Priority to US09/561,101 priority patent/US6271695B1/en
Publication of ITVA990010A1 publication Critical patent/ITVA990010A1/it
Application granted granted Critical
Publication of IT1313384B1 publication Critical patent/IT1313384B1/it

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
    • H03F3/45085—Long tailed pairs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
    • H03F3/45098—PI types
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
    • H03F3/45098—PI types
    • H03F3/45103—Non-folded cascode stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/372—Noise reduction and elimination in amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/489—A coil being added in the source circuit of a common source stage, e.g. as degeneration means
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45464—Indexing scheme relating to differential amplifiers the CSC comprising one or more coils
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45704—Indexing scheme relating to differential amplifiers the LC comprising one or more parallel resonance circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Bipolar Transistors (AREA)
IT1999VA000010A 1999-04-28 1999-04-28 Schema di polarizzazione in modo corrente ad alta precisione e minimorumore per un transistore bipolare a giunzione con degenerazione ut IT1313384B1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IT1999VA000010A IT1313384B1 (it) 1999-04-28 1999-04-28 Schema di polarizzazione in modo corrente ad alta precisione e minimorumore per un transistore bipolare a giunzione con degenerazione ut
US09/561,101 US6271695B1 (en) 1999-04-28 2000-04-28 Precision low-noise current mode biasing scheme for BJT with inductive emitter degeneration

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT1999VA000010A IT1313384B1 (it) 1999-04-28 1999-04-28 Schema di polarizzazione in modo corrente ad alta precisione e minimorumore per un transistore bipolare a giunzione con degenerazione ut

Publications (3)

Publication Number Publication Date
ITVA990010A0 ITVA990010A0 (it) 1999-04-28
ITVA990010A1 ITVA990010A1 (it) 2000-10-28
IT1313384B1 true IT1313384B1 (it) 2002-07-23

Family

ID=11423510

Family Applications (1)

Application Number Title Priority Date Filing Date
IT1999VA000010A IT1313384B1 (it) 1999-04-28 1999-04-28 Schema di polarizzazione in modo corrente ad alta precisione e minimorumore per un transistore bipolare a giunzione con degenerazione ut

Country Status (2)

Country Link
US (1) US6271695B1 (it)
IT (1) IT1313384B1 (it)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1081573B1 (en) * 1999-08-31 2003-04-09 STMicroelectronics S.r.l. High-precision biasing circuit for a cascoded CMOS stage, particularly for low noise amplifiers
US6492874B1 (en) * 2001-07-30 2002-12-10 Motorola, Inc. Active bias circuit
US7477106B2 (en) * 2002-12-19 2009-01-13 Nxp B.V. Power amplifier with bias control
TWI221534B (en) * 2003-01-08 2004-10-01 Aimtron Technology Corp Current detection circuit for high speed driving stage
US7853235B2 (en) * 2004-02-11 2010-12-14 Qualcomm, Incorporated Field effect transistor amplifier with linearization
US7564225B2 (en) * 2005-09-28 2009-07-21 Monolithic Power Systems, Inc. Low-power voltage reference
DE602006020022D1 (de) * 2006-05-12 2011-03-24 St Microelectronics Srl Ausgangsleistungskontrolle eines Hochfrequenzverstärkers
US7911279B2 (en) * 2008-11-26 2011-03-22 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Amplifier with bias circuit providing improved linearity
US8130037B2 (en) * 2010-03-23 2012-03-06 Analog Devices, Inc. Apparatus and method for reducing current noise
US9791480B2 (en) * 2013-05-21 2017-10-17 Analog Devices Global Current sensing of switching power regulators

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4731588A (en) * 1986-10-14 1988-03-15 Tektronix, Inc. Gain selectable amplifier with resonance compensation
US5880626A (en) * 1996-12-02 1999-03-09 Vtc, Inc. Active damping for a disk drive write circuit
US5757215A (en) * 1997-03-10 1998-05-26 Vtc Inc. Common-gate pre-driver for disc drive write circuit

Also Published As

Publication number Publication date
ITVA990010A0 (it) 1999-04-28
US6271695B1 (en) 2001-08-07
ITVA990010A1 (it) 2000-10-28

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