[go: up one dir, main page]

IT1306964B1 - Circuito a boosting capacitivo per la regolazione della tensione dilettura di riga in memorie non-volatili - Google Patents

Circuito a boosting capacitivo per la regolazione della tensione dilettura di riga in memorie non-volatili

Info

Publication number
IT1306964B1
IT1306964B1 IT1999MI000081A ITMI990081A IT1306964B1 IT 1306964 B1 IT1306964 B1 IT 1306964B1 IT 1999MI000081 A IT1999MI000081 A IT 1999MI000081A IT MI990081 A ITMI990081 A IT MI990081A IT 1306964 B1 IT1306964 B1 IT 1306964B1
Authority
IT
Italy
Prior art keywords
regulation
line voltage
volatile memories
boosting circuit
voltage reading
Prior art date
Application number
IT1999MI000081A
Other languages
English (en)
Inventor
Rino Micheloni
Osama Khouri
Ilaria Motta
Andrea Sacco
Guido Torelli
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT1999MI000081A priority Critical patent/IT1306964B1/it
Priority to US09/491,476 priority patent/US6259635B1/en
Publication of ITMI990081A1 publication Critical patent/ITMI990081A1/it
Application granted granted Critical
Publication of IT1306964B1 publication Critical patent/IT1306964B1/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/14—Word line organisation; Word line lay-out

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
  • Liquid Crystal Display Device Control (AREA)
IT1999MI000081A 1999-01-19 1999-01-19 Circuito a boosting capacitivo per la regolazione della tensione dilettura di riga in memorie non-volatili IT1306964B1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IT1999MI000081A IT1306964B1 (it) 1999-01-19 1999-01-19 Circuito a boosting capacitivo per la regolazione della tensione dilettura di riga in memorie non-volatili
US09/491,476 US6259635B1 (en) 1999-01-19 2000-01-19 Capacitive boosting circuit for the regulation of the word line reading voltage in non-volatile memories

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT1999MI000081A IT1306964B1 (it) 1999-01-19 1999-01-19 Circuito a boosting capacitivo per la regolazione della tensione dilettura di riga in memorie non-volatili

Publications (2)

Publication Number Publication Date
ITMI990081A1 ITMI990081A1 (it) 2000-07-19
IT1306964B1 true IT1306964B1 (it) 2001-10-11

Family

ID=11381523

Family Applications (1)

Application Number Title Priority Date Filing Date
IT1999MI000081A IT1306964B1 (it) 1999-01-19 1999-01-19 Circuito a boosting capacitivo per la regolazione della tensione dilettura di riga in memorie non-volatili

Country Status (2)

Country Link
US (1) US6259635B1 (it)
IT (1) IT1306964B1 (it)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6048734A (en) 1995-09-15 2000-04-11 The Regents Of The University Of Michigan Thermal microvalves in a fluid flow method
JP3983969B2 (ja) 2000-03-08 2007-09-26 株式会社東芝 不揮発性半導体記憶装置
DK200001482A (da) 2000-10-05 2002-04-06 Forskningsct Risoe Elektrokemisk celle og fremgangsmåde til fremstilling af samme.
US6692700B2 (en) 2001-02-14 2004-02-17 Handylab, Inc. Heat-reduction methods and systems related to microfluidic devices
US8895311B1 (en) 2001-03-28 2014-11-25 Handylab, Inc. Methods and systems for control of general purpose microfluidic devices
US6852287B2 (en) 2001-09-12 2005-02-08 Handylab, Inc. Microfluidic devices having a reduced number of input and output connections
US7323140B2 (en) 2001-03-28 2008-01-29 Handylab, Inc. Moving microdroplets in a microfluidic device
US7829025B2 (en) * 2001-03-28 2010-11-09 Venture Lending & Leasing Iv, Inc. Systems and methods for thermal actuation of microfluidic devices
US7010391B2 (en) 2001-03-28 2006-03-07 Handylab, Inc. Methods and systems for control of microfluidic devices
US6535424B2 (en) * 2001-07-25 2003-03-18 Advanced Micro Devices, Inc. Voltage boost circuit using supply voltage detection to compensate for supply voltage variations in read mode voltage
US6798275B1 (en) 2003-04-03 2004-09-28 Advanced Micro Devices, Inc. Fast, accurate and low power supply voltage booster using A/D converter
WO2005011867A2 (en) 2003-07-31 2005-02-10 Handylab, Inc. Processing particle-containing samples
US8852862B2 (en) 2004-05-03 2014-10-07 Handylab, Inc. Method for processing polynucleotide-containing samples
WO2005108620A2 (en) 2004-05-03 2005-11-17 Handylab, Inc. Processing polynucleotide-containing samples
US7352626B1 (en) * 2005-08-29 2008-04-01 Spansion Llc Voltage regulator with less overshoot and faster settling time
US8358543B1 (en) 2005-09-20 2013-01-22 Spansion Llc Flash memory programming with data dependent control of source lines
US8088616B2 (en) 2006-03-24 2012-01-03 Handylab, Inc. Heater unit for microfluidic diagnostic system
US11806718B2 (en) 2006-03-24 2023-11-07 Handylab, Inc. Fluorescence detector for microfluidic diagnostic system
US7998708B2 (en) 2006-03-24 2011-08-16 Handylab, Inc. Microfluidic system for amplifying and detecting polynucleotides in parallel
US10900066B2 (en) 2006-03-24 2021-01-26 Handylab, Inc. Microfluidic system for amplifying and detecting polynucleotides in parallel
EP3088083B1 (en) 2006-03-24 2018-08-01 Handylab, Inc. Method of performing pcr with a mult-ilane cartridge
US7626865B2 (en) * 2006-06-13 2009-12-01 Micron Technology, Inc. Charge pump operation in a non-volatile memory device
WO2008060604A2 (en) 2006-11-14 2008-05-22 Handylab, Inc. Microfluidic system for amplifying and detecting polynucleotides in parallel
US8709787B2 (en) 2006-11-14 2014-04-29 Handylab, Inc. Microfluidic cartridge and method of using same
US7443735B2 (en) * 2006-12-22 2008-10-28 Sandisk Corporation Method of reducing wordline recovery time
US7864584B2 (en) * 2007-05-02 2011-01-04 Micron Technology, Inc. Expanded programming window for non-volatile multilevel memory cells
US9186677B2 (en) 2007-07-13 2015-11-17 Handylab, Inc. Integrated apparatus for performing nucleic acid extraction and diagnostic testing on multiple biological samples
US8133671B2 (en) 2007-07-13 2012-03-13 Handylab, Inc. Integrated apparatus for performing nucleic acid extraction and diagnostic testing on multiple biological samples
US9618139B2 (en) 2007-07-13 2017-04-11 Handylab, Inc. Integrated heater and magnetic separator
USD621060S1 (en) 2008-07-14 2010-08-03 Handylab, Inc. Microfluidic cartridge
US8182763B2 (en) 2007-07-13 2012-05-22 Handylab, Inc. Rack for sample tubes and reagent holders
EP2171460B1 (en) 2007-07-13 2017-08-30 Handylab, Inc. Polynucleotide capture materials, and methods of using same
US8105783B2 (en) 2007-07-13 2012-01-31 Handylab, Inc. Microfluidic cartridge
US8287820B2 (en) 2007-07-13 2012-10-16 Handylab, Inc. Automated pipetting apparatus having a combined liquid pump and pipette head system
US20090136385A1 (en) 2007-07-13 2009-05-28 Handylab, Inc. Reagent Tube
USD618820S1 (en) 2008-07-11 2010-06-29 Handylab, Inc. Reagent holder
USD787087S1 (en) 2008-07-14 2017-05-16 Handylab, Inc. Housing
AU2012242510B2 (en) 2011-04-15 2015-05-14 Becton, Dickinson And Company Scanning real-time microfluidic thermocycler and methods for synchronized thermocycling and scanning optical detection
USD692162S1 (en) 2011-09-30 2013-10-22 Becton, Dickinson And Company Single piece reagent holder
RU2622432C2 (ru) 2011-09-30 2017-06-15 Бектон, Дикинсон Энд Компани Унифицированная полоска для реактивов
EP2773892B1 (en) 2011-11-04 2020-10-07 Handylab, Inc. Polynucleotide sample preparation device
CN107881219B (zh) 2012-02-03 2021-09-10 贝克顿·迪金森公司 用于分子诊断测试分配和测试之间兼容性确定的外部文件

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5268871A (en) * 1991-10-03 1993-12-07 International Business Machines Corporation Power supply tracking regulator for a memory array
JP3204602B2 (ja) * 1995-07-13 2001-09-04 株式会社東芝 不揮発性半導体記憶装置
EP0772200B1 (en) * 1995-10-31 2003-07-23 STMicroelectronics S.r.l. Voltage generator for electrically programmable non-volatile memory cells
US5726944A (en) * 1996-02-05 1998-03-10 Motorola, Inc. Voltage regulator for regulating an output voltage from a charge pump and method therefor
US5844840A (en) * 1997-08-19 1998-12-01 Advanced Micro Devices, Inc. High voltage NMOS pass gate having supply range, area, and speed advantages
US6002630A (en) * 1997-11-21 1999-12-14 Macronix International Co., Ltd. On chip voltage generation for low power integrated circuits

Also Published As

Publication number Publication date
US6259635B1 (en) 2001-07-10
ITMI990081A1 (it) 2000-07-19

Similar Documents

Publication Publication Date Title
IT1306964B1 (it) Circuito a boosting capacitivo per la regolazione della tensione dilettura di riga in memorie non-volatili
IT1306963B1 (it) Circuito a compensazione capacitativa per la regolazione dellatensione di lettura di riga in memorie non-volatili
ITMI922545A0 (it) Dispositivo di memoria a semiconduttore includente circuiteria di pompaggio della tensione di alimentazione
ITMI972594A1 (it) Regolatore di tensione per circuiti di memoria a singola tensione di alimentazione, in particolare per memorie di tipo flash.
ATE360262T1 (de) Nichtflüchtige integrierte mehrzustands- speichersysteme, die dielektrische speicherelemente verwenden
DE69911591D1 (de) Leseschaltung für einen nichtflüchtigen Speicher
DE69617762D1 (de) Verbesserte Lesung einer nichtflüchtigen Halbleiterspeicheranordnung
GB2332766B (en) Multi-level nonvolatile semiconductor memory device with a circuit for adjusting data sensing time
DE69514783D1 (de) Leseschaltung für serielle dichotomische Abfühlung von mehrschichtigen nichtflüchtigen Speicherzellen
DE60019191D1 (de) Nichtflüchtige ferroelektrische Speicheranordnung
GB2296986B (en) A semiconductor memory device including boosting voltage generators
IT1313873B1 (it) Architettura per la gestione delle tensioni interne in una memoria nonvolatile, in particolare di tipo flash dual-work a singola tensione di
DE69626769D1 (de) Spannungspumpenschaltung für Halbleiterspeicheranordnung
IT1320666B1 (it) Circuito di comando di un regolatore di tensione variabile di unamemoria non volatile con decodifica gerarchica di riga.
DE69622115D1 (de) Verbesserungen an nichtflüchtigen Speicheranordnungen oder bezüglich derselben
IT1318892B1 (it) Circuito di lettura per memorie non volatili a semiconduttore.
IT1295910B1 (it) Circuito di lettura per memorie non volatili
DE69604925D1 (de) Integrierte speicherschaltung mit back-end ausschaltung der moden
DE69828021D1 (de) Halbleiterspeicheranordnung mit mehreren Banken
ITMI981768A0 (it) Circuiteria a generatore di impulsi per temporizzare un dispositivo di memoria a basso consumo
EP0974145A4 (en) VOLTAGE SUPPLY DETECTION SCHEME FOR FLASH STORAGE
DE69928514D1 (de) Lesungsschaltung für einen Halbleiterspeicher
IT1319037B1 (it) Circuito di lettura di memorie non volatili
ITRM980544A0 (it) Circuito di lettura per dispositivi di memoria flash con perfezionati margini di programmazione e procedimento di funzionamento
IT1307686B1 (it) Circuito di lettura per celle di memoria non volatile senzalimitazioni della tensione di alimentazione.