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IT1028009B - Metodo di accrescimento di un composto semiconduttore - Google Patents

Metodo di accrescimento di un composto semiconduttore

Info

Publication number
IT1028009B
IT1028009B IT3096974A IT3096974A IT1028009B IT 1028009 B IT1028009 B IT 1028009B IT 3096974 A IT3096974 A IT 3096974A IT 3096974 A IT3096974 A IT 3096974A IT 1028009 B IT1028009 B IT 1028009B
Authority
IT
Italy
Prior art keywords
growth
semiconductor compound
semiconductor
compound
Prior art date
Application number
IT3096974A
Other languages
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of IT1028009B publication Critical patent/IT1028009B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
IT3096974A 1973-12-28 1974-12-23 Metodo di accrescimento di un composto semiconduttore IT1028009B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7346938A FR2255949B1 (it) 1973-12-28 1973-12-28

Publications (1)

Publication Number Publication Date
IT1028009B true IT1028009B (it) 1979-01-30

Family

ID=9129935

Family Applications (1)

Application Number Title Priority Date Filing Date
IT3096974A IT1028009B (it) 1973-12-28 1974-12-23 Metodo di accrescimento di un composto semiconduttore

Country Status (6)

Country Link
JP (1) JPS5099681A (it)
BE (1) BE823943A (it)
DE (1) DE2459591A1 (it)
FR (1) FR2255949B1 (it)
GB (1) GB1467860A (it)
IT (1) IT1028009B (it)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2383728A1 (fr) * 1977-03-16 1978-10-13 Radiotechnique Compelec Perfectionnement a un procede de realisation d'un lingot de materiau cristallin
FR2416729A1 (fr) * 1978-02-09 1979-09-07 Radiotechnique Compelec Perfectionnement au procede de fabrication d'un monocristal de compose iii-v''
GB2097695B (en) * 1981-03-24 1984-08-22 Mitsubishi Monsanto Chem Method for producing a single crystal
JPS6345198A (ja) * 1986-04-23 1988-02-26 Sumitomo Electric Ind Ltd 多元系結晶の製造方法
US4853066A (en) * 1986-10-31 1989-08-01 Furukawa Electric Co., Ltd. Method for growing compound semiconductor crystal
JPS6465099A (en) * 1987-09-07 1989-03-10 Hitachi Cable Production of gaas single crystal

Also Published As

Publication number Publication date
GB1467860A (en) 1977-03-23
FR2255949A1 (it) 1975-07-25
FR2255949B1 (it) 1976-10-08
BE823943A (nl) 1975-06-27
DE2459591A1 (de) 1975-07-10
JPS5099681A (it) 1975-08-07

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