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IT1022516B - Procedimento per la produzione di un diodo a luminescenza a semicom duttore - Google Patents

Procedimento per la produzione di un diodo a luminescenza a semicom duttore

Info

Publication number
IT1022516B
IT1022516B IT27945/74A IT2794574A IT1022516B IT 1022516 B IT1022516 B IT 1022516B IT 27945/74 A IT27945/74 A IT 27945/74A IT 2794574 A IT2794574 A IT 2794574A IT 1022516 B IT1022516 B IT 1022516B
Authority
IT
Italy
Prior art keywords
semicom
ductor
procedure
production
luminescence diode
Prior art date
Application number
IT27945/74A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19732349544 external-priority patent/DE2349544C3/de
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT1022516B publication Critical patent/IT1022516B/it

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/011Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/02Contacts, special
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/051Etching
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/065Gp III-V generic compounds-processing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/072Heterojunctions
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/135Removal of substrate
IT27945/74A 1973-10-02 1974-10-01 Procedimento per la produzione di un diodo a luminescenza a semicom duttore IT1022516B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732349544 DE2349544C3 (de) 1973-10-02 Verfahren zum Herstellen einer Halbleiter-Lumineszenzdiode

Publications (1)

Publication Number Publication Date
IT1022516B true IT1022516B (it) 1978-04-20

Family

ID=5894346

Family Applications (1)

Application Number Title Priority Date Filing Date
IT27945/74A IT1022516B (it) 1973-10-02 1974-10-01 Procedimento per la produzione di un diodo a luminescenza a semicom duttore

Country Status (10)

Country Link
US (1) US3963537A (it)
JP (1) JPS5742984B2 (it)
BE (1) BE820634A (it)
DK (1) DK517074A (it)
FR (1) FR2246080A1 (it)
GB (1) GB1448606A (it)
IE (1) IE39673B1 (it)
IT (1) IT1022516B (it)
LU (1) LU71021A1 (it)
NL (1) NL7412735A (it)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2152041B (en) 1983-12-22 1987-11-11 Procter & Gamble X-substituted derivatives of carboxylic acids used as peroxygen bleach activators
US5145809A (en) * 1990-12-04 1992-09-08 Millitech Corporation Fabrication of gunn diode semiconductor devices
GB2252871B (en) * 1991-02-16 1994-11-02 Robin Mukerjee Wide surface LED
AU747260B2 (en) 1997-07-25 2002-05-09 Nichia Chemical Industries, Ltd. Nitride semiconductor device
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
US6711191B1 (en) 1999-03-04 2004-03-23 Nichia Corporation Nitride semiconductor laser device
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3099591A (en) * 1958-12-15 1963-07-30 Shockley William Semiconductive device
US3119947A (en) * 1961-02-20 1964-01-28 Clevite Corp Semiconductive electron emissive device
US3343026A (en) * 1963-11-27 1967-09-19 H P Associates Semi-conductive radiation source
US3675064A (en) * 1970-02-16 1972-07-04 Motorola Inc Directed emission light emitting diode

Also Published As

Publication number Publication date
IE39673B1 (en) 1978-12-06
DE2349544B2 (de) 1976-10-21
DK517074A (it) 1975-06-02
US3963537A (en) 1976-06-15
JPS5742984B2 (it) 1982-09-11
NL7412735A (nl) 1975-04-04
DE2349544A1 (de) 1975-04-10
LU71021A1 (it) 1975-04-17
BE820634A (fr) 1975-02-03
IE39673L (en) 1975-04-02
JPS5062588A (it) 1975-05-28
GB1448606A (en) 1976-09-08
FR2246080A1 (it) 1975-04-25

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