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IT1022970B - Circuito logico finario integrato monoliticamente - Google Patents

Circuito logico finario integrato monoliticamente

Info

Publication number
IT1022970B
IT1022970B IT28565/74A IT2856574A IT1022970B IT 1022970 B IT1022970 B IT 1022970B IT 28565/74 A IT28565/74 A IT 28565/74A IT 2856574 A IT2856574 A IT 2856574A IT 1022970 B IT1022970 B IT 1022970B
Authority
IT
Italy
Prior art keywords
logic circuit
monolithically integrated
integrated financial
financial logic
monolithically
Prior art date
Application number
IT28565/74A
Other languages
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT1022970B publication Critical patent/IT1022970B/it

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63Combinations of vertical and lateral BJTs
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14Modifications for compensating variations of physical values, e.g. of temperature
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/091Integrated injection logic or merged transistor logic
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65Integrated injection logic
    • H10D84/652Integrated injection logic using vertical injector structures
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67Complementary BJTs
    • H10D84/673Vertical complementary BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00Three-dimensional [3D] integrated devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Logic Circuits (AREA)
IT28565/74A 1973-11-10 1974-10-18 Circuito logico finario integrato monoliticamente IT1022970B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2356301A DE2356301C3 (de) 1973-11-10 1973-11-10 Monolithisch integrierte, logische Schaltung

Publications (1)

Publication Number Publication Date
IT1022970B true IT1022970B (it) 1978-04-20

Family

ID=5897791

Family Applications (1)

Application Number Title Priority Date Filing Date
IT28565/74A IT1022970B (it) 1973-11-10 1974-10-18 Circuito logico finario integrato monoliticamente

Country Status (7)

Country Link
US (1) US3916218A (it)
JP (1) JPS5241177B2 (it)
DE (1) DE2356301C3 (it)
FR (1) FR2258059B1 (it)
GB (1) GB1448914A (it)
IT (1) IT1022970B (it)
NL (1) NL7413098A (it)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2538910C3 (de) * 1975-09-02 1980-01-10 Philips Patentverwaltung Gmbh, 2000 Hamburg Schaltungsanordnung zur Erhöhung der Schaltgeschwindigkeit einer integrierten Schaltung
US4057894A (en) * 1976-02-09 1977-11-15 Rca Corporation Controllably valued resistor
DE2612666C2 (de) * 1976-03-25 1982-11-18 Ibm Deutschland Gmbh, 7000 Stuttgart Integrierte, invertierende logische Schaltung
US4140920A (en) * 1976-08-27 1979-02-20 Signetics Corporation Multivalued integrated injection logic circuitry and method
US4053923A (en) * 1976-09-23 1977-10-11 Motorola, Inc. Integrated logic elements with improved speed-power characteristics
FR2375722A1 (fr) * 1976-12-21 1978-07-21 Thomson Csf Element logique a faible consommation
SU619066A1 (ru) * 1977-01-06 1979-03-15 Предприятие П/Я В-2892 Интегральный логический элемент
US4400689A (en) * 1977-04-07 1983-08-23 Analog Devices, Incorporated A-to-D Converter of the successive-approximation type
US4547766A (en) * 1977-04-07 1985-10-15 Analog Device, Incorporated A-To-D converter of the successive-approximation type
US4178584A (en) * 1978-01-23 1979-12-11 Motorola, Inc. Integrated injection logic digital-to-analog converter employing feedback regulation and method
US4240846A (en) * 1978-06-27 1980-12-23 Harris Corporation Method of fabricating up diffused substrate FED logic utilizing a two-step epitaxial deposition
US4400690A (en) * 1978-08-08 1983-08-23 Analog Devices, Incorporated A-to-D Converter of the successive-approximation type
US4306159A (en) * 1979-06-14 1981-12-15 International Business Machines Corporation Bipolar inverter and NAND logic circuit with extremely low DC standby power
JPS5632762A (en) * 1979-08-27 1981-04-02 Fujitsu Ltd Semiconductor device
US4598383A (en) * 1981-12-28 1986-07-01 Texas Instruments Incorporated Combination of a data processor with a switch means
US4629912A (en) * 1982-02-02 1986-12-16 Fairchild Camera And Instrument Corp. Schottky shunt integrated injection
SE433787B (sv) * 1983-07-15 1984-06-12 Ericsson Telefon Ab L M Multipel transistor med gemensam emitter och sparata kollektorer
US4641047A (en) * 1984-07-02 1987-02-03 Motorola, Inc. Complex direct coupled transistor logic
US5021856A (en) * 1989-03-15 1991-06-04 Plessey Overseas Limited Universal cell for bipolar NPN and PNP transistors and resistive elements
KR19990072936A (ko) 1998-02-27 1999-09-27 가나이 쓰도무 아이솔레이터및그것을사용하는모뎀장치

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2021824C3 (de) * 1970-05-05 1980-08-14 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithische Halbleiterschaltung
DE2212168C2 (de) * 1972-03-14 1982-10-21 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte Halbleiteranordnung

Also Published As

Publication number Publication date
JPS5081257A (it) 1975-07-01
DE2356301A1 (de) 1975-05-22
GB1448914A (en) 1976-09-08
JPS5241177B2 (it) 1977-10-17
DE2356301B2 (de) 1981-07-02
DE2356301C3 (de) 1982-03-11
FR2258059A1 (it) 1975-08-08
US3916218A (en) 1975-10-28
FR2258059B1 (it) 1976-10-22
NL7413098A (nl) 1975-05-13

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