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FR2375722A1 - Element logique a faible consommation - Google Patents

Element logique a faible consommation

Info

Publication number
FR2375722A1
FR2375722A1 FR7638484A FR7638484A FR2375722A1 FR 2375722 A1 FR2375722 A1 FR 2375722A1 FR 7638484 A FR7638484 A FR 7638484A FR 7638484 A FR7638484 A FR 7638484A FR 2375722 A1 FR2375722 A1 FR 2375722A1
Authority
FR
France
Prior art keywords
base
emitter
npn transistor
transistor
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7638484A
Other languages
English (en)
Other versions
FR2375722B1 (fr
Inventor
Tung Pham Ngu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7638484A priority Critical patent/FR2375722A1/fr
Priority to US05/862,437 priority patent/US4155014A/en
Priority to GB52809/77A priority patent/GB1576169A/en
Priority to CA293,525A priority patent/CA1098595A/fr
Priority to DE2756777A priority patent/DE2756777C3/de
Priority to JP15424077A priority patent/JPS53114363A/ja
Publication of FR2375722A1 publication Critical patent/FR2375722A1/fr
Application granted granted Critical
Publication of FR2375722B1 publication Critical patent/FR2375722B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63—Combinations of vertical and lateral BJTs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/091—Integrated injection logic or merged transistor logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

L'invention a pour objet un nouvel élément logique à faible consommation. Cet élément comporte un premier transistor PNP latéral, dont la base et l'émétteur sont reliés respectivement à des sources de polarisation fixe, la tension de base étant plus faible que celle de l'émetteur, le collecteur de ce transistor est solidaire de la base d'un transistor vertical NPN intégré sur le même substrat, l'ensemble formant un ensemble de quatre couches formant trois jonctions semiconductrices. Le transistor NPN comporte plusieurs émetteurs dont l'un est relié à la base d'un autre transistor NPN, dont le collecteur constitue la sortie du dispositif et l'émetteur est à la masse. L'invention s'applique aux circuits logiques à grande densité d'intégration.
FR7638484A 1976-12-21 1976-12-21 Element logique a faible consommation Granted FR2375722A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR7638484A FR2375722A1 (fr) 1976-12-21 1976-12-21 Element logique a faible consommation
US05/862,437 US4155014A (en) 1976-12-21 1977-12-16 Logic element having low power consumption
GB52809/77A GB1576169A (en) 1976-12-21 1977-12-19 Logic element having low power consumption
CA293,525A CA1098595A (fr) 1976-12-21 1977-12-20 Element de loqique a faible consommation d'energie
DE2756777A DE2756777C3 (de) 1976-12-21 1977-12-20 Digitalschaltungselement
JP15424077A JPS53114363A (en) 1976-12-21 1977-12-21 Low power consumption logic element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7638484A FR2375722A1 (fr) 1976-12-21 1976-12-21 Element logique a faible consommation

Publications (2)

Publication Number Publication Date
FR2375722A1 true FR2375722A1 (fr) 1978-07-21
FR2375722B1 FR2375722B1 (fr) 1981-11-06

Family

ID=9181324

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7638484A Granted FR2375722A1 (fr) 1976-12-21 1976-12-21 Element logique a faible consommation

Country Status (6)

Country Link
US (1) US4155014A (fr)
JP (1) JPS53114363A (fr)
CA (1) CA1098595A (fr)
DE (1) DE2756777C3 (fr)
FR (1) FR2375722A1 (fr)
GB (1) GB1576169A (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4268763A (en) * 1979-04-05 1981-05-19 Signetics Corporation Conditioning circuit for use with I2 L and ISL logic arrays embodying two power supplies
GB2222305A (en) * 1988-08-23 1990-02-28 Plessey Co Plc Integrated injection logic circuit
JP3084982B2 (ja) * 1992-11-25 2000-09-04 富士電機株式会社 半導体装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL282779A (fr) * 1961-09-08
US3197710A (en) * 1963-05-31 1965-07-27 Westinghouse Electric Corp Complementary transistor structure
US3402330A (en) * 1966-05-16 1968-09-17 Honeywell Inc Semiconductor integrated circuit apparatus
US3515899A (en) * 1966-06-08 1970-06-02 Northern Electric Co Logic gate with stored charge carrier leakage path
CH484521A (de) * 1968-07-06 1970-01-15 Foerderung Forschung Gmbh Elektronische Schaltungsanordnung mit mindestens einem integrierten Schaltkreis
US3655999A (en) * 1971-04-05 1972-04-11 Ibm Shift register
DE2356301C3 (de) * 1973-11-10 1982-03-11 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte, logische Schaltung
US4065680A (en) * 1974-07-11 1977-12-27 Signetics Corporation Collector-up logic transmission gates
US4032796A (en) * 1974-08-13 1977-06-28 Honeywell Inc. Logic dot-and gate circuits
DE2509530C2 (de) * 1975-03-05 1985-05-23 Ibm Deutschland Gmbh, 7000 Stuttgart Halbleiteranordnung für die Grundbausteine eines hochintegrierbaren logischen Halbleiterschaltungskonzepts basierend auf Mehrfachkollektor-Umkehrtransistoren
GB1558281A (en) * 1975-07-31 1979-12-19 Tokyo Shibaura Electric Co Semiconductor device and logic circuit constituted by the semiconductor device
JPS597246B2 (ja) * 1975-12-01 1984-02-17 株式会社東芝 ハンドウタイロンリカイロ

Also Published As

Publication number Publication date
DE2756777A1 (de) 1978-06-22
DE2756777C3 (de) 1982-09-30
JPS53114363A (en) 1978-10-05
CA1098595A (fr) 1981-03-31
DE2756777B2 (de) 1980-12-18
US4155014A (en) 1979-05-15
GB1576169A (en) 1980-10-01
FR2375722B1 (fr) 1981-11-06

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Legal Events

Date Code Title Description
ST Notification of lapse