IT1011658B - Procedimento per la formazione di regioni impiantate con ioni in un materiale semiconduttore - Google Patents

Procedimento per la formazione di regioni impiantate con ioni in un materiale semiconduttore

Info

Publication number: IT1011658B
Authority: IT; Italy
Prior art keywords: ions; procedure; formation; semiconductor material; regions implanted
Prior art date: 1973-05-21

Application number

IT68017/74A

Other languages

English (en)

Original Assignee

Fairchild Camera Instr Co

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1973-05-21

Filing date

1974-03-29

Publication date

1977-02-10

1974-03-29 Application filed by Fairchild Camera Instr Co filed Critical Fairchild Camera Instr Co

1977-02-10 Application granted granted Critical

1977-02-10 Publication of IT1011658B publication Critical patent/IT1011658B/it

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/03—Diffusion

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Solid State Image Pick-Up Elements (AREA)

IT68017/74A 1973-05-21 1974-03-29 Procedimento per la formazione di regioni impiantate con ioni in un materiale semiconduttore IT1011658B (it)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US00362132A US3853634A (en)	1973-05-21	1973-05-21	Self-aligned implanted barrier two-phase charge coupled devices

Publications (1)

Publication Number	Publication Date
IT1011658B true IT1011658B (it)	1977-02-10

Family

ID=23424806

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IT68017/74A IT1011658B (it)	1973-05-21	1974-03-29	Procedimento per la formazione di regioni impiantate con ioni in un materiale semiconduttore

Country Status (8)

Country	Link
US (1)	US3853634A (it)
JP (1)	JPS5713142B2 (it)
CA (1)	CA994925A (it)
DE (1)	DE2410628A1 (it)
FR (1)	FR2231113B1 (it)
GB (1)	GB1463121A (it)
IT (1)	IT1011658B (it)
NL (1)	NL7401971A (it)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3925105A (en) *	1974-07-02	1975-12-09	Texas Instruments Inc	Process for fabricating integrated circuits utilizing ion implantation
US3930893A (en) *	1975-03-03	1976-01-06	Honeywell Information Systems, Inc.	Conductivity connected charge-coupled device fabrication process
US4167017A (en) *	1976-06-01	1979-09-04	Texas Instruments Incorporated	CCD structures with surface potential asymmetry beneath the phase electrodes
US4076557A (en) *	1976-08-19	1978-02-28	Honeywell Inc.	Method for providing semiconductor devices
JPS5325373A (en) *	1976-08-20	1978-03-09	Sony Corp	Production of charge transfer device
US4156247A (en) *	1976-12-15	1979-05-22	Electron Memories & Magnetic Corporation	Two-phase continuous poly silicon gate CCD
JPS53110385A (en) *	1977-03-08	1978-09-27	Matsushita Electric Ind Co Ltd	Manufacture of ccd
US4360963A (en) *	1981-07-31	1982-11-30	Rca Corporation	Method of making CCD imagers with reduced defects
GB2137806B (en) *	1983-04-05	1986-10-08	Standard Telephones Cables Ltd	Ion implantation in semiconductor bodies
FR2578683B1 (fr) *	1985-03-08	1987-08-28	Thomson Csf	Procede de fabrication d'une diode anti-eblouissement associee a un canal en surface, et systeme anti-eblouissement obtenu par ce procede
US4992392A (en) *	1989-12-28	1991-02-12	Eastman Kodak Company	Method of making a virtual phase CCD
JPH06140442A (ja) *	1992-10-29	1994-05-20	Matsushita Electric Ind Co Ltd	電荷転送装置
US5302544A (en) *	1992-12-17	1994-04-12	Eastman Kodak Company	Method of making CCD having a single level electrode of single crystalline silicon
US5298448A (en) *	1992-12-18	1994-03-29	Eastman Kodak Company	Method of making two-phase buried channel planar gate CCD
US5292682A (en) *	1993-07-06	1994-03-08	Eastman Kodak Company	Method of making two-phase charge coupled device
US7217601B1 (en)	2002-10-23	2007-05-15	Massachusetts Institute Of Technology	High-yield single-level gate charge-coupled device design and fabrication
US9848142B2 (en)	2015-07-10	2017-12-19	Semiconductor Components Industries, Llc	Methods for clocking an image sensor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3475234A (en) *	1967-03-27	1969-10-28	Bell Telephone Labor Inc	Method for making mis structures
US3699646A (en) *	1970-12-28	1972-10-24	Intel Corp	Integrated circuit structure and method for making integrated circuit structure
US3717790A (en) *	1971-06-24	1973-02-20	Bell Telephone Labor Inc	Ion implanted silicon diode array targets for electron beam camera tubes

1973
- 1973-05-21 US US00362132A patent/US3853634A/en not_active Expired - Lifetime
1974
- 1974-02-01 GB GB483474A patent/GB1463121A/en not_active Expired
- 1974-02-07 CA CA192,008A patent/CA994925A/en not_active Expired
- 1974-02-13 NL NL7401971A patent/NL7401971A/xx not_active Application Discontinuation
- 1974-03-06 DE DE2410628A patent/DE2410628A1/de not_active Ceased
- 1974-03-29 IT IT68017/74A patent/IT1011658B/it active
- 1974-05-17 FR FR7417247A patent/FR2231113B1/fr not_active Expired
- 1974-05-21 JP JP5623574A patent/JPS5713142B2/ja not_active Expired

Also Published As

Publication number	Publication date
JPS5713142B2 (it)	1982-03-15
US3853634A (en)	1974-12-10
AU6673674A (en)	1975-09-18
NL7401971A (it)	1974-11-25
CA994925A (en)	1976-08-10
DE2410628A1 (de)	1974-12-12
FR2231113B1 (it)	1978-03-31
GB1463121A (en)	1977-02-02
JPS5020678A (it)	1975-03-05
FR2231113A1 (it)	1974-12-20

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