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IT1027260B - Procedimento per migliorare il drogaggio di un materiale semiconduttore - Google Patents

Procedimento per migliorare il drogaggio di un materiale semiconduttore

Info

Publication number
IT1027260B
IT1027260B IT67033/75A IT6703375A IT1027260B IT 1027260 B IT1027260 B IT 1027260B IT 67033/75 A IT67033/75 A IT 67033/75A IT 6703375 A IT6703375 A IT 6703375A IT 1027260 B IT1027260 B IT 1027260B
Authority
IT
Italy
Prior art keywords
improving
procedure
semiconductor material
semiconductor
Prior art date
Application number
IT67033/75A
Other languages
English (en)
Inventor
J Monnier
J Borel
P Baruch
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of IT1027260B publication Critical patent/IT1027260B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Bipolar Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
IT67033/75A 1974-01-10 1975-01-09 Procedimento per migliorare il drogaggio di un materiale semiconduttore IT1027260B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7400774A FR2257998B1 (it) 1974-01-10 1974-01-10

Publications (1)

Publication Number Publication Date
IT1027260B true IT1027260B (it) 1978-11-20

Family

ID=9133300

Family Applications (1)

Application Number Title Priority Date Filing Date
IT67033/75A IT1027260B (it) 1974-01-10 1975-01-09 Procedimento per migliorare il drogaggio di un materiale semiconduttore

Country Status (7)

Country Link
US (1) US4004950A (it)
JP (1) JPS50141271A (it)
DE (1) DE2500728A1 (it)
FR (1) FR2257998B1 (it)
GB (1) GB1488943A (it)
IT (1) IT1027260B (it)
NL (1) NL7500155A (it)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1542868A (en) * 1975-11-14 1979-03-28 Siemens Ag Production of phosphorus-doped monocrystalline silicon rods
US4043836A (en) * 1976-05-03 1977-08-23 General Electric Company Method of manufacturing semiconductor devices
US4111720A (en) * 1977-03-31 1978-09-05 International Business Machines Corporation Method for forming a non-epitaxial bipolar integrated circuit
US4168990A (en) * 1977-04-04 1979-09-25 International Rectifier Corporation Hot implantation at 1100°-1300° C. for forming non-gaussian impurity profile
US4128439A (en) * 1977-08-01 1978-12-05 International Business Machines Corporation Method for forming self-aligned field effect device by ion implantation and outdiffusion
DE2756861C2 (de) * 1977-12-20 1983-11-24 Max Planck Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen Verfahren zum Ändern de Lage des Fermi-Niveaus von amorphem Silicium durch Dotieren mittels Ionenimplantation
NL8003336A (nl) * 1979-06-12 1980-12-16 Dearnaley G Werkwijze voor de vervaardiging van een halfgeleider- inrichting.
US4249962A (en) * 1979-09-11 1981-02-10 Western Electric Company, Inc. Method of removing contaminating impurities from device areas in a semiconductor wafer
NL8103649A (nl) * 1981-08-03 1983-03-01 Philips Nv Halfgeleiderinrichting en werkwijze voor het vervaardigen van de halfgeleiderinrichting.
US4506436A (en) * 1981-12-21 1985-03-26 International Business Machines Corporation Method for increasing the radiation resistance of charge storage semiconductor devices
US4596605A (en) * 1982-12-14 1986-06-24 Junichi Nishizawa Fabrication process of static induction transistor and solid-state image sensor device
DE3839210A1 (de) * 1988-11-19 1990-05-23 Asea Brown Boveri Verfahren zum axialen einstellen der traegerlebensdauer
DE102006002903A1 (de) * 2006-01-20 2007-08-02 Infineon Technologies Austria Ag Verfahren zur Behandlung eines Sauerstoff enthaltenden Halbleiterwafers und Halbleiterbauelement
EP1979934B1 (de) * 2006-01-20 2010-04-21 Infineon Technologies Austria AG Verfahren zur behandlung eines sauerstoff enthaltenden halbleiterwafers und halbleiterbauelement
US8211784B2 (en) * 2009-10-26 2012-07-03 Advanced Ion Beam Technology, Inc. Method for manufacturing a semiconductor device with less leakage current induced by carbon implant
WO2012081664A1 (ja) 2010-12-17 2012-06-21 富士電機株式会社 半導体装置およびその製造方法
US9716147B2 (en) * 2014-06-09 2017-07-25 Atomera Incorporated Semiconductor devices with enhanced deterministic doping and related methods
DE102015109661A1 (de) * 2015-06-17 2016-12-22 Infineon Technologies Ag Verfahren zum Bilden eines Halbleiterbauelements und Halbleiterbauelement
DE102015119648B4 (de) * 2015-11-13 2022-11-10 Infineon Technologies Ag Verfahren zum herstellen einer halbleitervorrichtung

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3383567A (en) * 1965-09-15 1968-05-14 Ion Physics Corp Solid state translating device comprising irradiation implanted conductivity ions
US3515956A (en) * 1967-10-16 1970-06-02 Ion Physics Corp High-voltage semiconductor device having a guard ring containing substitutionally active ions in interstitial positions
US3513035A (en) * 1967-11-01 1970-05-19 Fairchild Camera Instr Co Semiconductor device process for reducing surface recombination velocity
US3622382A (en) * 1969-05-05 1971-11-23 Ibm Semiconductor isolation structure and method of producing
US3718502A (en) * 1969-10-15 1973-02-27 J Gibbons Enhancement of diffusion of atoms into a heated substrate by bombardment
GB1307546A (en) * 1970-05-22 1973-02-21 Mullard Ltd Methods of manufacturing semiconductor devices
US3756862A (en) * 1971-12-21 1973-09-04 Ibm Proton enhanced diffusion methods

Also Published As

Publication number Publication date
JPS50141271A (it) 1975-11-13
FR2257998A1 (it) 1975-08-08
NL7500155A (nl) 1975-07-14
GB1488943A (en) 1977-10-19
US4004950A (en) 1977-01-25
DE2500728A1 (de) 1975-07-17
FR2257998B1 (it) 1976-11-26

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