IL58128A - High power mosfet and method of manufacture - Google Patents

High power mosfet and method of manufacture

Info

Publication number: IL58128A
Authority: IL; Israel
Prior art keywords: manufacture; high power; power mosfet; mosfet; power
Prior art date: 1978-10-13

Application number

IL58128A

Original Assignee

Int Rectifier Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1978-10-13

Filing date

1979-08-28

Publication date

1981-12-31

Family has litigation

First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26715426&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=IL58128(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.

1979-08-28 Application filed by Int Rectifier Corp filed Critical Int Rectifier Corp

1981-12-31 Publication of IL58128A publication Critical patent/IL58128A/en

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/662—Vertical DMOS [VDMOS] FETs having a drift region having a doping concentration that is higher between adjacent body regions relative to other parts of the drift region
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/663—Vertical DMOS [VDMOS] FETs having both source contacts and drain contacts on the same surface, i.e. up-drain VDMOS
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
- H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs
- H10D62/156—Drain regions of DMOS transistors
- H10D62/157—Impurity concentrations or distributions
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/393—Body regions of DMOS transistors or IGBTs
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/149—Source or drain regions of field-effect devices
- H10D62/151—Source or drain regions of field-effect devices of IGFETs

IL58128A 1978-10-13 1979-08-28 High power mosfet and method of manufacture IL58128A (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US95131078A	1978-10-13	1978-10-13
US3866279A	1979-05-14	1979-05-14

Publications (1)

Publication Number	Publication Date
IL58128A true IL58128A (en)	1981-12-31

Family

ID=26715426

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
IL58128A IL58128A (en)	1978-10-13	1979-08-28	High power mosfet and method of manufacture

Country Status (19)

Country	Link
JP (2)	JP2622378B2 (en)
AR (1)	AR219006A1 (en)
BR (1)	BR7906338A (en)
CA (2)	CA1123119A (en)
CH (2)	CH660649A5 (en)
CS (1)	CS222676B2 (en)
DE (2)	DE2954481C2 (en)
DK (3)	DK157272C (en)
ES (1)	ES484652A1 (en)
FR (1)	FR2438917A1 (en)
GB (1)	GB2033658B (en)
HU (1)	HU182506B (en)
IL (1)	IL58128A (en)
IT (1)	IT1193238B (en)
MX (1)	MX147137A (en)
NL (1)	NL175358C (en)
PL (1)	PL123961B1 (en)
SE (2)	SE443682B (en)
SU (1)	SU1621817A3 (en)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4593302B1 (en) *	1980-08-18	1998-02-03	Int Rectifier Corp	Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide
DE3040775C2 (en) *	1980-10-29	1987-01-15	Siemens AG, 1000 Berlin und 8000 München	Controllable MIS semiconductor device
US4412242A (en)	1980-11-17	1983-10-25	International Rectifier Corporation	Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions
GB2111745B (en) *	1981-12-07	1985-06-19	Philips Electronic Associated	Insulated-gate field-effect transistors
CA1188821A (en) *	1982-09-03	1985-06-11	Patrick W. Clarke	Power mosfet integrated circuit
US4532534A (en) *	1982-09-07	1985-07-30	Rca Corporation	MOSFET with perimeter channel
DE3346286A1 (en) *	1982-12-21	1984-06-28	International Rectifier Corp., Los Angeles, Calif.	High-power metal-oxide field-effect transistor semiconductor component
JPS59167066A (en) *	1983-03-14	1984-09-20	Nissan Motor Co Ltd	Vertical type metal oxide semiconductor field effect transistor
JPS6010677A (en) *	1983-06-30	1985-01-19	Nissan Motor Co Ltd	Vertical MOS transistor
JPH0247874A (en) *	1988-08-10	1990-02-16	Fuji Electric Co Ltd	Manufacturing method of MOS type semiconductor device
IT1247293B (en) *	1990-05-09	1994-12-12	Int Rectifier Corp	POWER TRANSISTOR DEVICE PRESENTING AN ULTRA-DEEP REGION, AT A GREATER CONCENTRATION
US5766966A (en) *	1996-02-09	1998-06-16	International Rectifier Corporation	Power transistor device having ultra deep increased concentration region
US5304831A (en) *	1990-12-21	1994-04-19	Siliconix Incorporated	Low on-resistance power MOS technology
US5404040A (en) *	1990-12-21	1995-04-04	Siliconix Incorporated	Structure and fabrication of power MOSFETs, including termination structures
IT1250233B (en) *	1991-11-29	1995-04-03	St Microelectronics Srl	PROCEDURE FOR THE MANUFACTURE OF INTEGRATED CIRCUITS IN MOS TECHNOLOGY.
DE59208987D1 (en) *	1992-08-10	1997-11-27	Siemens Ag	Power MOSFET with improved avalanche strength
JPH06268227A (en) *	1993-03-10	1994-09-22	Hitachi Ltd	Insulated gate bipolar transistor
EP0660396B1 (en) *	1993-12-24	1998-11-04	Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno	Power MOS device chip and package assembly
US5798287A (en) *	1993-12-24	1998-08-25	Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno	Method for forming a power MOS device chip
DE69321966T2 (en) *	1993-12-24	1999-06-02	Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania	Power semiconductor device
EP0665597A1 (en) *	1994-01-27	1995-08-02	Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe	IGBT and manufacturing process therefore
EP0689238B1 (en) *	1994-06-23	2002-02-20	STMicroelectronics S.r.l.	MOS-technology power device manufacturing process
US5817546A (en) *	1994-06-23	1998-10-06	Stmicroelectronics S.R.L.	Process of making a MOS-technology power device
DE69418037T2 (en) *	1994-08-02	1999-08-26	Consorzio Per La Ricerca Sulla Microelettronica Ne	Power semiconductor device made of MOS technology chips and housing structure
US5798554A (en) *	1995-02-24	1998-08-25	Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno	MOS-technology power device integrated structure and manufacturing process thereof
DE69533134T2 (en)	1995-10-30	2005-07-07	Stmicroelectronics S.R.L., Agrate Brianza	Power component of high density in MOS technology
EP0772242B1 (en)	1995-10-30	2006-04-05	STMicroelectronics S.r.l.	Single feature size MOS technology power device
US6228719B1 (en)	1995-11-06	2001-05-08	Stmicroelectronics S.R.L.	MOS technology power device with low output resistance and low capacitance, and related manufacturing process
DE69518653T2 (en) *	1995-12-28	2001-04-19	Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania	MOS technology power arrangement in an integrated structure
DE69839439D1 (en)	1998-05-26	2008-06-19	St Microelectronics Srl	MOS technology power arrangement with high integration density
EP1126527A4 (en) *	1999-04-09	2007-06-13	Shindengen Electric Mfg	HOCHSPANNUNGSHALBLERTERANURDNUNG
JP4122113B2 (en) *	1999-06-24	2008-07-23	新電元工業株式会社	High breakdown strength field effect transistor
US6344379B1 (en)	1999-10-22	2002-02-05	Semiconductor Components Industries Llc	Semiconductor device with an undulating base region and method therefor
JP4845293B2 (en) *	2000-08-30	2011-12-28	新電元工業株式会社	Field effect transistor
JP2006295134A (en)	2005-03-17	2006-10-26	Sanyo Electric Co Ltd	Semiconductor device and manufacturing method thereof
US9484451B2 (en)	2007-10-05	2016-11-01	Vishay-Siliconix	MOSFET active area and edge termination area charge balance
US9431249B2 (en)	2011-12-01	2016-08-30	Vishay-Siliconix	Edge termination for super junction MOSFET devices
US9614043B2 (en)	2012-02-09	2017-04-04	Vishay-Siliconix	MOSFET termination trench
US9842911B2 (en)	2012-05-30	2017-12-12	Vishay-Siliconix	Adaptive charge balanced edge termination
US9530844B2 (en)	2012-12-28	2016-12-27	Cree, Inc.	Transistor structures having reduced electrical field at the gate oxide and methods for making same
US10115815B2 (en)	2012-12-28	2018-10-30	Cree, Inc.	Transistor structures having a deep recessed P+ junction and methods for making same
JP5907097B2 (en) *	2013-03-18	2016-04-20	三菱電機株式会社	Semiconductor device
US9508596B2 (en)	2014-06-20	2016-11-29	Vishay-Siliconix	Processes used in fabricating a metal-insulator-semiconductor field effect transistor
US9887259B2 (en)	2014-06-23	2018-02-06	Vishay-Siliconix	Modulated super junction power MOSFET devices
KR102098996B1 (en)	2014-08-19	2020-04-08	비쉐이-실리코닉스	Super-junction metal oxide semiconductor field effect transistor
US10615274B2 (en)	2017-12-21	2020-04-07	Cree, Inc.	Vertical semiconductor device with improved ruggedness
US11489069B2 (en)	2017-12-21	2022-11-01	Wolfspeed, Inc.	Vertical semiconductor device with improved ruggedness

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4015278A (en) *	1974-11-26	1977-03-29	Fujitsu Ltd.	Field effect semiconductor device
JPS52106688A (en) *	1976-03-05	1977-09-07	Nec Corp	Field-effect transistor
JPS52132684A (en) *	1976-04-29	1977-11-07	Sony Corp	Insulating gate type field effect transistor
US4055884A (en) *	1976-12-13	1977-11-01	International Business Machines Corporation	Fabrication of power field effect transistors and the resulting structures
JPS5374385A (en) *	1976-12-15	1978-07-01	Hitachi Ltd	Manufacture of field effect semiconductor device
US4148047A (en) *	1978-01-16	1979-04-03	Honeywell Inc.	Semiconductor apparatus
JPH05185381A (en) *	1992-01-10	1993-07-27	Yuum Kogyo:Kk	Handle for edge-replaceable saw

1979
- 1979-08-22 DK DK350679A patent/DK157272C/en not_active IP Right Cessation
- 1979-08-28 IL IL58128A patent/IL58128A/en unknown
- 1979-09-25 AR AR278193A patent/AR219006A1/en active
- 1979-09-28 CS CS796589A patent/CS222676B2/en unknown
- 1979-09-28 MX MX179453A patent/MX147137A/en unknown
- 1979-10-02 BR BR7906338A patent/BR7906338A/en not_active IP Right Cessation
- 1979-10-02 ES ES484652A patent/ES484652A1/en not_active Expired
- 1979-10-08 DE DE19792954481 patent/DE2954481C2/en not_active Expired - Lifetime
- 1979-10-08 DE DE2940699A patent/DE2940699C2/en not_active Expired
- 1979-10-09 CA CA337,182A patent/CA1123119A/en not_active Expired
- 1979-10-09 NL NLAANVRAGE7907472,A patent/NL175358C/en not_active IP Right Cessation
- 1979-10-09 GB GB7935059A patent/GB2033658B/en not_active Expired
- 1979-10-09 FR FR7925070A patent/FR2438917A1/en active Granted
- 1979-10-11 PL PL1979218878A patent/PL123961B1/en unknown
- 1979-10-11 HU HU79IE891A patent/HU182506B/en not_active IP Right Cessation
- 1979-10-11 SU SU792835965A patent/SU1621817A3/en active
- 1979-10-11 IT IT26435/79A patent/IT1193238B/en active
- 1979-10-12 SE SE7908479A patent/SE443682B/en not_active IP Right Cessation
- 1979-10-12 CH CH7696/81A patent/CH660649A5/en not_active IP Right Cessation
- 1979-10-12 CH CH923279A patent/CH642485A5/en not_active IP Right Cessation
1981
- 1981-11-12 CA CA000389973A patent/CA1136291A/en not_active Expired
1985
- 1985-07-26 SE SE8503615A patent/SE465444B/en not_active IP Right Cessation
1987
- 1987-04-28 JP JP62106158A patent/JP2622378B2/en not_active Expired - Lifetime
1988
- 1988-09-15 DK DK512488A patent/DK512488A/en not_active Application Discontinuation
- 1988-09-15 DK DK512388A patent/DK512388A/en not_active Application Discontinuation
1994
- 1994-10-12 JP JP6246144A patent/JP2643095B2/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
CH660649A5 (en)	1987-05-15
JP2622378B2 (en)	1997-06-18
DK512488D0 (en)	1988-09-15
DE2940699C2 (en)	1986-04-03
AR219006A1 (en)	1980-07-15
JPS6323365A (en)	1988-01-30
HU182506B (en)	1984-01-30
PL123961B1 (en)	1982-12-31
DK512388D0 (en)	1988-09-15
IT7926435A0 (en)	1979-10-11
FR2438917B1 (en)	1984-09-07
JPH07169950A (en)	1995-07-04
DK512488A (en)	1988-09-15
ES484652A1 (en)	1980-09-01
CA1123119A (en)	1982-05-04
GB2033658A (en)	1980-05-21
SE465444B (en)	1991-09-09
IT1193238B (en)	1988-06-15
DK512388A (en)	1988-09-15
DE2940699A1 (en)	1980-04-24
BR7906338A (en)	1980-06-24
CH642485A5 (en)	1984-04-13
GB2033658B (en)	1983-03-02
NL175358C (en)	1984-10-16
SE443682B (en)	1986-03-03
MX147137A (en)	1982-10-13
JP2643095B2 (en)	1997-08-20
SE7908479L (en)	1980-04-14
CA1136291A (en)	1982-11-23
NL175358B (en)	1984-05-16
CS222676B2 (en)	1983-07-29
DK157272B (en)	1989-11-27
DE2954481C2 (en)	1990-12-06
DK157272C (en)	1990-04-30
SU1621817A3 (en)	1991-01-15
FR2438917A1 (en)	1980-05-09
SE8503615L (en)	1985-07-26
NL7907472A (en)	1980-04-15
PL218878A1 (en)	1980-08-11
DK350679A (en)	1980-04-14
SE8503615D0 (en)	1985-07-26

Publication	Publication Date	Title
IL58128A (en)	1981-12-31	High power mosfet and method of manufacture
EP0094891A3 (en)	1985-07-31	Power mosfet structure and method of fabricating it
JPS5563526A (en)	1980-05-13	Stator and method of manufacturing same
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DE3169519D1 (en)	1985-05-02	Semi-conductor power device assembly and method of manufacture thereof
JPS55104911A (en)	1980-08-11	Cilicagel and method of producing same
JPS5543488A (en)	1980-03-27	Electrode assembly and method of producing same
JPS54124168A (en)	1979-09-26	Energy attenuator and method of producing same
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JPS54132730A (en)	1979-10-16	Lithiummiodine cell and method of producing same
JPS54121685A (en)	1979-09-20	Ic and method of fabricating same
JPS54109130A (en)	1979-08-27	Sealed electric apparatus and method of making same
JPS553698A (en)	1980-01-11	Power thyristor* method of fabricating and using same
JPS5416690A (en)	1979-02-07	Waterrproof type power cable and method of making same
JPS553689A (en)	1980-01-11	Power thyristor and method of manufacturing same
JPS5495322A (en)	1979-07-27	Selffcontained electrode and method of producing same
JPS5564334A (en)	1980-05-15	Method of and device for manufacturing cathode
JPS5533514A (en)	1980-03-08	Method of previous cooling
JPS54104541A (en)	1979-08-16	Organic electrolyte and method of producing same
JPS54152126A (en)	1979-11-30	Battery and method of producing same
GB2019650B (en)	1982-07-07	Thyristor and method of making the thyristor
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Legal Events

Date	Code	Title	Description
1998-02-08	KB	Patent renewed