IL166392A - Apparatus for detecting ionizing radiation - Google Patents
Apparatus for detecting ionizing radiationInfo
- Publication number
- IL166392A IL166392A IL166392A IL16639205A IL166392A IL 166392 A IL166392 A IL 166392A IL 166392 A IL166392 A IL 166392A IL 16639205 A IL16639205 A IL 16639205A IL 166392 A IL166392 A IL 166392A
- Authority
- IL
- Israel
- Prior art keywords
- layer
- assembly
- equal
- microns
- backlit
- Prior art date
Links
- 230000005865 ionizing radiation Effects 0.000 title claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 238000004891 communication Methods 0.000 claims description 8
- 230000005855 radiation Effects 0.000 claims description 7
- 239000004593 Epoxy Substances 0.000 claims description 2
- 230000004927 fusion Effects 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 230000006335 response to radiation Effects 0.000 claims description 2
- 229910000679 solder Inorganic materials 0.000 claims description 2
- 230000004044 response Effects 0.000 claims 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 238000002591 computed tomography Methods 0.000 description 10
- YFSLABAYQDPWPF-UHFFFAOYSA-N 1,2,3-trichloro-4-(2,3,5-trichlorophenyl)benzene Chemical compound ClC1=CC(Cl)=C(Cl)C(C=2C(=C(Cl)C(Cl)=CC=2)Cl)=C1 YFSLABAYQDPWPF-UHFFFAOYSA-N 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005658 nuclear physics Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000003351 stiffener Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20183—Arrangements for preventing or correcting crosstalk, e.g. optical or electrical arrangements for correcting crosstalk
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/026—Wafer-level processing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
- H10F39/1895—X-ray, gamma-ray or corpuscular radiation imagers of the hybrid type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
- H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/199—Back-illuminated image sensors
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/707,984 US7075091B2 (en) | 2004-01-29 | 2004-01-29 | Apparatus for detecting ionizing radiation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL166392A0 IL166392A0 (en) | 2006-01-15 |
| IL166392A true IL166392A (en) | 2009-07-20 |
Family
ID=34749170
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL166392A IL166392A (en) | 2004-01-29 | 2005-01-19 | Apparatus for detecting ionizing radiation |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7075091B2 (nl) |
| JP (1) | JP4974130B2 (nl) |
| CN (1) | CN1648687A (nl) |
| DE (1) | DE102005003378A1 (nl) |
| IL (1) | IL166392A (nl) |
| NL (1) | NL1028105C2 (nl) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7968853B2 (en) * | 2005-04-26 | 2011-06-28 | Koninklijke Philips Electronics N.V. | Double decker detector for spectral CT |
| US7582879B2 (en) * | 2006-03-27 | 2009-09-01 | Analogic Corporation | Modular x-ray measurement system |
| EP2005475A2 (en) * | 2006-03-30 | 2008-12-24 | Koninklijke Philips Electronics N.V. | Radiation detector array |
| US20080001246A1 (en) * | 2006-05-24 | 2008-01-03 | Dipak Sengupta | Single package detector and digital converter integration |
| DE102006046770A1 (de) * | 2006-09-29 | 2008-04-03 | Siemens Ag | Bauelement, Bauteil und Verfahren zu dessen Herstellung |
| US7606346B2 (en) * | 2007-01-04 | 2009-10-20 | General Electric Company | CT detector module construction |
| US7851698B2 (en) * | 2008-06-12 | 2010-12-14 | Sunpower Corporation | Trench process and structure for backside contact solar cells with polysilicon doped regions |
| KR101695867B1 (ko) * | 2009-03-26 | 2017-01-13 | 코닌클리케 필립스 엔.브이. | 데이터 획득 |
| JP5450188B2 (ja) * | 2010-03-16 | 2014-03-26 | 株式会社東芝 | 放射線検出装置、放射線検出装置の製造方法および画像撮影装置 |
| JP5358509B2 (ja) * | 2010-04-15 | 2013-12-04 | 浜松ホトニクス株式会社 | 放射線検出器モジュール |
| US9022584B2 (en) * | 2010-11-24 | 2015-05-05 | Raytheon Company | Protecting an optical surface |
| RU2595795C2 (ru) | 2011-03-24 | 2016-08-27 | Конинклейке Филипс Н.В. | Спектральный детектор изображения |
| US8822262B2 (en) | 2011-12-22 | 2014-09-02 | Sunpower Corporation | Fabricating solar cells with silicon nanoparticles |
| US9538107B2 (en) | 2013-05-16 | 2017-01-03 | Koninklijke Philips N.V. | Imaging detector |
| RU2015104180A (ru) * | 2013-09-05 | 2017-10-10 | Конинклейке Филипс Н.В. | Элемент детектора излучения |
| JP6776024B2 (ja) * | 2016-06-30 | 2020-10-28 | キヤノンメディカルシステムズ株式会社 | Ｘ線検出器、ｘ線検出器モジュール、支持部材及びｘ線ｃｔ装置 |
| CN109541668B (zh) * | 2018-12-03 | 2020-05-22 | 西安交通大学 | 一种无电源辐射监测装置及方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000294760A (ja) * | 1999-04-07 | 2000-10-20 | Nikon Corp | 光検出素子 |
| US6512809B2 (en) * | 2000-05-02 | 2003-01-28 | Siemens Aktiengesellschaft | Radiation detector for an X-ray computed tomography apparatus |
| JP3713418B2 (ja) * | 2000-05-30 | 2005-11-09 | 光正 小柳 | ３次元画像処理装置の製造方法 |
| US6658082B2 (en) * | 2000-08-14 | 2003-12-02 | Kabushiki Kaisha Toshiba | Radiation detector, radiation detecting system and X-ray CT apparatus |
| US6426991B1 (en) * | 2000-11-16 | 2002-07-30 | Koninklijke Philips Electronics N.V. | Back-illuminated photodiodes for computed tomography detectors |
| JP2003017676A (ja) * | 2001-04-27 | 2003-01-17 | Canon Inc | 放射線撮像装置およびそれを用いた放射線撮像システム |
| US6510195B1 (en) * | 2001-07-18 | 2003-01-21 | Koninklijke Philips Electronics, N.V. | Solid state x-radiation detector modules and mosaics thereof, and an imaging method and apparatus employing the same |
| US6707046B2 (en) | 2002-01-03 | 2004-03-16 | General Electric Company | Optimized scintillator and pixilated photodiode detector array for multi-slice CT x-ray detector using backside illumination |
| JP4237966B2 (ja) * | 2002-03-08 | 2009-03-11 | 浜松ホトニクス株式会社 | 検出器 |
| US6933489B2 (en) * | 2002-05-10 | 2005-08-23 | Hamamatsu Photonics K.K. | Back illuminated photodiode array and method of manufacturing the same |
| JP4123415B2 (ja) * | 2002-05-20 | 2008-07-23 | ソニー株式会社 | 固体撮像装置 |
| DE10244177A1 (de) * | 2002-09-23 | 2004-04-08 | Siemens Ag | Bilddetektor für Röntgeneinrichtungen mit rückseitig kontaktierten, organischen Bild-Sensoren |
| US6762473B1 (en) * | 2003-06-25 | 2004-07-13 | Semicoa Semiconductors | Ultra thin back-illuminated photodiode array structures and fabrication methods |
-
2004
- 2004-01-29 US US10/707,984 patent/US7075091B2/en not_active Expired - Lifetime
-
2005
- 2005-01-19 IL IL166392A patent/IL166392A/en unknown
- 2005-01-24 DE DE200510003378 patent/DE102005003378A1/de not_active Withdrawn
- 2005-01-24 NL NL1028105A patent/NL1028105C2/nl not_active IP Right Cessation
- 2005-01-28 JP JP2005021073A patent/JP4974130B2/ja not_active Expired - Lifetime
- 2005-01-31 CN CN200510006180.5A patent/CN1648687A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| IL166392A0 (en) | 2006-01-15 |
| US20050167603A1 (en) | 2005-08-04 |
| JP4974130B2 (ja) | 2012-07-11 |
| DE102005003378A1 (de) | 2005-08-11 |
| JP2005229110A (ja) | 2005-08-25 |
| NL1028105A1 (nl) | 2005-08-01 |
| CN1648687A (zh) | 2005-08-03 |
| NL1028105C2 (nl) | 2008-02-25 |
| US7075091B2 (en) | 2006-07-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| KB | Patent renewed | ||
| KB | Patent renewed | ||
| KB | Patent renewed |